CN110364625A - A kind of perovskite quantum dot light electric transistor and preparation method for weak light detection - Google Patents
A kind of perovskite quantum dot light electric transistor and preparation method for weak light detection Download PDFInfo
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- CN110364625A CN110364625A CN201910525986.7A CN201910525986A CN110364625A CN 110364625 A CN110364625 A CN 110364625A CN 201910525986 A CN201910525986 A CN 201910525986A CN 110364625 A CN110364625 A CN 110364625A
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Abstract
The embodiment of the present invention provides a kind of perovskite quantum dot light electric transistor for weak light detection characterized by comprising the base substrate of upper surface level；Gate electrode is located in base substrate；Gate dielectric layer and base substrate all-around-gate electrode, and projected area is equal to base substrate；Metal oxide semiconductor films are located on gate dielectric layer；Source and drain metal electrodes are located on gate dielectric layer and metal oxide semiconductor films；Charge transport interface layer is located among source and drain metal electrodes；Perovskite quanta point material layer is located at right above charge transport interface layer and charge transport interface layer is completely covered；Metal oxide semiconductor films, charge transport interface layer film, perovskite quanta point material layer projected area are equal to gate electrode.
Description
Technical field
The present invention relates to optical detector field more particularly to a kind of perovskite quantum dot light transistors for weak light detection
Pipe and preparation method.
Background technique
Metal oxide semiconductor films transistor, especially indium gallium zinc oxide (IGZO) thin film transistor (TFT) have steady
Fixed, high mobility, it is transparent, homogeneity is good the features such as, be widely used in display panel array and detector array, but IGZO
Material absorptivity is low, does not have very strong photoresponse to dim light.Perovskite quanta point material has absorptivity height, light absorption model
It encloses the features such as wide, carrier diffusion length is long, carrier lifetime is long, band gap is adjustable, the excellent light of perovskite quanta point material is inhaled
Characteristic is received it also to be had be widely applied very much in field of photodetectors.In order to realize preferable low light intensity detection, can incite somebody to action
Perovskite quanta point material prepares a kind of novel photo transistor detector in conjunction with MOS transistor.
Summary of the invention
The embodiment of the present invention provides a kind of perovskite quantum dot light electric transistor and preparation method thereof for weak light detection.
Perovskite quanta point material is combined by fine and close charge transport interface layer with metal oxide semiconductor transistor, is provided
Wide with spectral response, dark current is low, has the phototransistor detected by force very much to dim light, and preparation process is simple, device at
Power is high, and in optical detector field, potentiality are very big.
In order to achieve the above object, on the one hand, the embodiment of the present invention provides a kind of perovskite quantum dot light for weak light detection
Electric transistor, it is characterised in that: include:
The base substrate 1 of upper surface level；
Gate electrode 2 is located in base substrate 1；
1 all-around-gate electrode 2 of gate dielectric layer 3 and base substrate, and projected area is equal to base substrate 1；
Metal oxide semiconductor films 4 are located on gate dielectric layer 3；
Source and drain metal electrodes 5 are located on gate dielectric layer 3 and metal oxide semiconductor films 4；
Charge transport interface layer 6 is located among source and drain metal electrodes 5；
Perovskite quanta point material layer 7 is located at right above charge transport interface layer 6 and charge transport interface layer is completely covered
6；
Metal oxide semiconductor films 4, charge transport interface layer film 6,7 projected area of perovskite quanta point material layer
Equal to gate electrode 2.
Further, the base substrate 1 is at least one: silicon substrate, glass substrate, quartz substrate, polyimides PI
Substrate, polyethylene terephtalate substrate and polyethylene naphthalate PEN substrate；
Further, the gate electrode 2 and source and drain metal electrodes 5 are molybdenum, gold, silver, aluminium, copper product electrode；
Further, the gate dielectric layer 3 is silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material
Material；
Further, the material of the metal oxide semiconductor films 4 includes: indium gallium zinc oxide IGZO, indium zinc-tin
Oxide IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO；
Further, the material of the charge transport interface layer 6 includes: Fullerene C20, fullerene derivate PCBM, richness
Strangle ene derivative ICBA, fullerene and polymetylmethacrylate mixture；
Further, the chemical formula of the material of the perovskite quanta point material layer 7 is ABX3, A includes methylamine ion
CH3NH3 +, methanediamine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+；B includes lead ion Pb2+, tin ion Sn2+, bismuth ion
Bi2+, europium ion Eu2+；X includes iodide ion I-, chloride ion Cl-Or bromide ion Br-；The perovskite quanta point material layer has width
Wave band absorption region.
Further, the gate electrode 2 is with a thickness of 30nm to 200nm；
Further, the gate dielectric layer 3 is with a thickness of 100nm to 400nm；
Further, the metal oxide semiconductor films 4 with a thickness of 10nm to 100nm；
Further, the source and drain metal electrodes 5 are with a thickness of 30nm to 200nm, the channel length of formation be 1um extremely
100um, width are 1um to 1000um；
Further, the charge transport interface layer 6 with a thickness of 10nm to 90nm；
Further, the diameter of the perovskite quanta point material layer 7 is 2-10nm, with a thickness of 2-20nm.
On the other hand, the embodiment of the present invention provides a kind of perovskite quantum dot optoelectronic transistor fabrication for weak light detection
Method characterized by comprising
Gate electrode 2 is deposited in base substrate 1 using magnetron sputtering method or vacuum vapour deposition, is formed by lithographic process
Gate electrode figure；
Base substrate 1 and gate electrode 2 are deposited on using magnetron sputtering method or chemical vapour deposition technique gate electrode dielectric layer 3
On, gate electrode figure is formed by lithographic process；
Metal oxide semiconductor films 4 are deposited on by gate electrode dielectric layer 3 using magnetron sputtering method or solution processing method
On, blocky active area figure is formed by lithographic process；
Source and drain metal electrodes 5 are deposited on by gate dielectric layer 3 and metal oxide using magnetron sputtering method or vacuum vapour deposition
On semiconductive thin film 4, source and drain metal electrodes figure is formed by lithographic process；Source and drain metal electrodes 5 and metal oxide
Object semiconductive thin film 4 has certain overlapping；
Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature be 100 DEG C extremely
450 DEG C, annealing time is 0.5 hour to 4 hours；
Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk screen
Print process or roll-to-roll print process prepare a layer charge transport interface layer 6 on the oxide semiconductor thin-film 4；Using molten
Liquid spin-coating method or knife coating or spray coating method prepare one layer of perovskite quanta point material layer 7 on charge transport interface layer 6.
Further, pass through silicon substrate, glass substrate, quartz substrate, polyimides PI substrate, poly terephthalic acid second two
Alcohol ester PET substrate and polyethylene naphthalate PEN substrate at least one make the base substrate 1；
Further, pass through gate electrode 2 described in molybdenum, gold, silver, aluminium, copper product electrode fabrication；
Further, pass through silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Described in material production
Gate dielectric layer 3.
Further, it is aoxidized by indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, Al-Doped ZnO AZO, zinc-tin
Object ZTO, magnesium-zinc oxide MZO material make the metal oxide semiconductor films 4；
Further, pass through source and drain metal electrodes 5 described in molybdenum, gold, silver, aluminium, copper product electrode fabrication；
Further, pass through Fullerene C20, fullerene derivate PCBM, fullerene derivate ICBA, fullerene and poly- first
The mixture material of base methyl acrylate PMMA makes the charge transport interface layer 6；
Further, the chemical formula of the material of the perovskite quanta point material layer 7 is ABX3；A includes methylamine ion
CH3NH3 +, methanediamine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+；B includes lead ion Pb2+, tin ion Sn2+, bismuth ion
Bi2+, europium ion Eu2+；X includes iodide ion I-, chloride ion Cl-Or bromide ion Br-；The perovskite quanta point material layer has width
Wave band absorption region.
Further, the gate electrode 2 is set with a thickness of 30nm to 200nm；
Further, the gate dielectric layer 3 is set with a thickness of 100nm to 400nm；
Further, be arranged the metal oxide semiconductor films 4 with a thickness of 10nm to 100nm.
Further, the source and drain metal electrodes 5 are set with a thickness of 30nm to 200nm, the channel length of formation be 1um extremely
100um, width are 1um to 1000um；
Further, be arranged the charge transport interface layer 6 with a thickness of 10nm to 90nm；
Further, the diameter that the perovskite quanta point material layer 7 is arranged is 2-10nm, with a thickness of 2-20nm.
Above-mentioned technical proposal has the following beneficial effects: the embodiment of the present invention using metal oxide semiconductor films conduct
Phototransistor channel material, perovskite quanta point material is as light absorption layer material, and charge transport interface layer film is by metal
Oxide semiconductor thin-film and perovskite quanta point material layer separate, and prepare metal oxide semiconductor films and perovskite amount
Son puts material layer and by the transistor of charge transport interface layer separation structure, is not only utilized using indium gallium zinc oxide IGZO as generation
The high mobility of the metal-oxide semiconductor (MOS) of table, feature transparent, homogeneity is good, and using perovskite quanta point material this
The light absorbing material kind haveing excellent performance is strong to low light intensity absorption characteristic using it, carrier diffusion length is long, the adjustable spy of band gap
Point, overcomes larger using IGZO as the forbidden bandwidth of the metal oxide semiconductor material of representative, can not effectively be inhaled to dim light
The weakness of receipts, and forbidden bandwidth can be adjusted by adjusting the X element content in perovskite quanta point material.Charge transmits boundary
Surface layer film separates perovskite quanta point material layer with metal oxide semiconductor films, avoids perovskite quantum dot material
The ion of the bed of material enters the deterioration that characteristic is expected using IGZO as the metal oxide semiconductor films village bring IGZO of representative.Cause
This, the phototransistor energy for weak light detection prepared in conjunction with metal-oxide semiconductor (MOS)/perovskite quantum dot hybrid structure
It is enough sufficiently to combine metal oxide semiconductor films high mobility and the high light absorptive performance photoelectricity of perovskite quanta point material layer brilliant
Body pipe, wide spectrum response low with dark current, there is the technical effect of high photoresponse to low light intensity；The preparation of the embodiment of the present invention
Method and current silicon-based technology platform have good compatibility, and the preparation process of transistor is simple, and transistor success rate is high.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of 1 phototransistor of the embodiment of the present invention；
Fig. 2 is that the present invention implements 1 phototransistor preparation method flow chart；
Fig. 3 is that the present invention implements transfer curve of 1 optotransistor under wavelength 350nm ultraviolet lighting；
Fig. 4 is transfer curve of 1 optotransistor of the embodiment of the present invention under wavelength 500nm visible light illumination；
Fig. 5 is 1 optotransistor of the embodiment of the present invention and metal oxide intrinsic phototransistor in ultraviolet region dim light light
Transfer curve under intense irradiation；
Appended drawing reference indicates are as follows: 1- base substrate, 2- gate electrode, 3- gate dielectric layer, 4- metal-oxide semiconductor (MOS)
Film, 5- source and drain metal electrodes, 6- charge transport interface layer, 7- perovskite quanta point material layer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to achieve the above object, on the one hand, the embodiment of the present invention provides a kind of perovskite quantum dot light for weak light detection
Electric transistor, it is characterised in that: include:
The base substrate of upper surface level；
Gate electrode is located in base substrate；
Gate dielectric layer and base substrate all-around-gate electrode, and projected area is equal to base substrate；
Metal oxide semiconductor films are located on gate dielectric layer；
Source and drain metal electrodes are located on gate dielectric layer and metal oxide semiconductor films；
Charge transport interface layer is located among source and drain metal electrodes；
Perovskite quanta point material layer is located at right above charge transport interface layer and charge transport interface layer is completely covered；
Metal oxide semiconductor films, charge transport interface layer film, perovskite quanta point material layer projected area etc.
In gate electrode.
Further, the base substrate is at least one: silicon substrate, glass substrate, quartz substrate, polyimides PI lining
Bottom, polyethylene terephtalate substrate and polyethylene naphthalate PEN substrate；
Further, the gate electrode and source and drain metal electrodes are molybdenum, gold, silver, aluminium, copper product electrode；
Further, the gate dielectric layer is silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material
Material；
Further, the material of the metal oxide semiconductor films includes: indium gallium zinc oxide IGZO, indium zinc-tin oxygen
Compound IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO it is one or more；
Further, the material of the charge transport interface layer includes: Fullerene C20, fullerene derivate PCBM, fowler
The mixture of ene derivative ICBA, fullerene and its derivative and polymetylmethacrylate it is one or more；
Further, the chemical formula of the material of the perovskite quanta point material layer is ABX3, A includes methylamine ion
CH3NH3 +, methanediamine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+And this several cation mixes according to a certain percentage
The mixture being formed by；B includes lead ion Pb2+, tin ion Sn2+, bismuth ion Bi2+, europium ion Eu2+And this it is several sun from
Son mixes the mixture being formed by according to a certain percentage；X includes iodide ion I-, chloride ion Cl-Or bromide ion Br-；The calcium titanium
Mine quanta point material has broadband absorption range.
Further, the gate electrode is with a thickness of 30nm to 200nm；
Further, the gate dielectric layer is with a thickness of 100nm to 400nm；
Further, the metal oxide semiconductor films with a thickness of 10nm to 100nm；
Further, the source and drain metal electrodes are with a thickness of 30nm to 200nm, the channel length of formation be 1um extremely
100um, width are 1um to 1000um；
Further, the charge transport interface layer with a thickness of 10nm to 90nm；
Further, the diameter of the perovskite quanta point material layer is 2-10nm, with a thickness of 2-20nm.
On the other hand, the present invention provides a kind of perovskite quantum dot optoelectronic preparation method of transistor for weak light detection,
It is characterised by comprising:
1, base substrate is cleaned
It selects glass substrate or is covered with the silicon substrate of 300nm silica as substrate material, the preceding substrate difference of experiment
In deionized water, acetone, each ultrasonic 15 minutes in alcohol.It dries under a nitrogen atmosphere.
2, prepared by gate electrode, by taking the preparation of metal Mo as an example
It places the substrate into magnetic control platform, when vacuum reaches 1.5 × 10 in sputtering unit case-3When Pa, it is passed through argon Ar, is made
Intracavitary vacustat is obtained in 0.36Pa, 150s is sputtered using Dc source power 80W, obtains the Mo film of 150nm thickness.Pass through
Photoetching technique patterned gate electrode.
Gate electrode is grown into base substrate using magnetron sputtering method or vacuum vapour deposition, grid are formed by lithographic process
Electrode pattern.
3, prepared by gate dielectric layer, with SiO2Preparation for
Sample is put into plasma enhanced CVD PECVD system reaction chamber, reaction chamber is evacuated to high vacuum,
Reaction chamber temperature rises to 300 DEG C, radio-frequency power 30W, is then passed through the SiH that flow is 100sccm simultaneously into reaction chamber4With
The N of 400sccm2O, pressure control grow the SiO of 200nm thickness in 0.13Pa2Film.
It is grown on gate electrode using magnetron sputtering method or chemical vapour deposition technique gate electrode dielectric layer, passes through lithographic process
Form gate electrode figure.
4, prepared by metal oxide semiconductor layer, by taking the preparation of indium gallium zinc oxide IGZO as an example
(1) preparation of IGZO film
Sample is put into magnetic control platform, when vacuum reaches 5 × 10 in sputtering unit case-4When Pa, it is passed through argon Ar and oxygen
Gas O2, flow-rate ratio 47: 3 sputter 300s using Dc source power 100W, obtain the IGZO film of 40nm thickness.
(2) IGZO's is graphical
Spin coating photoresist, photoetching simultaneously etch IGZO film with dilute hydrochloric acid；Photoresist is removed using acetone ultrasound.
Metal oxide semiconductor films are directly grown into using magnetron sputtering method or solution processing method by gate electrode dielectric
Layer, forms blocky active area figure by lithographic process.
5, the preparation of source and drain metal electrodes Mo
(1) prepare before magnetron sputtering
Spin coating photoresist, and keep effective coverage exposed using photoetching, inactive area is covered by photoresist.
(2) preparation of Mo electrode
The good substrate of photoetching is put into magnetic control platform, when vacuum reaches 9.9 × 10 in sputtering unit case-4When Pa, it is passed through
Argon Ar obtains the Mo of 150nm thickness so that intracavitary vacustat sputters 150s in 0.36Pa, using Dc source power 80W
Film, and source and drain figure is formed by removing.
(3) sample is put into equal RIE systems reaction chamber, to gate electrode aperture.
Source and drain metal electrodes are directly grown on gate dielectric layer using magnetron sputtering method or vacuum vapour deposition, pass through photoetching
Processing procedure forms source and drain metal electrodes figure；The source and drain metal electrodes and metal oxide object semiconductive thin film have one at this time
It is fixed overlapping.
6, it makes annealing treatment
The transistor device for making metal-oxide film is placed under the conditions of 250 DEG C of purity oxygens and is made annealing treatment 1 hour.
Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature be 100 DEG C extremely
450 DEG C, annealing time 0.5 hour to 4 hours.
7, prepared by charge transport interface layer film, by taking fullerene derivate PCBM as an example.
The PCBM solution of 20mg/ml is dripped to 2000 revs/min of revolving speed spin coating 40s on IGZO transistor, then 100
Anneal 10min at DEG C.
Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk screen
Print process or roll-to-roll print process prepare one layer of charge transport interface layer (6) on the oxide semiconductor thin-film；
8, prepared by perovskite quantum dot layer, with inorganic perovskite CsPbBr3For.
The PCBM solution of 20mg/ml is dripped on PCBM with 2000 revs/min of revolving speed spin coating 45s, naturally dry.
One layer of perovskite is prepared on the charge transport interface layer using solution spin-coating method or knife coating or spray coating method
Quanta point material layer.
To sum up, the technique for preparing IGZO transistor is mutually compatible with traditional silicon-based technology, prepares PCBM and perovskite amount
The spin coating proceeding of son point is also suitble to large area preparation process, ensure that the phototransistor in field of detecting large area, integrates
The requirement of change.
Corresponding to above method embodiment, Fig. 3 is that the present invention implements 1 optotransistor under wavelength 350nm ultraviolet lighting
Transfer curve.Fig. 4 is transfer curve of 1 optotransistor of the embodiment of the present invention under wavelength 500nm visible light illumination；Fig. 5 is this
The transfer of 1 optotransistor of inventive embodiments and metal oxide intrinsic phototransistor under the irradiation of ultraviolet region dim light light intensity is bent
Line.
Photoelectric properties test: source-drain voltage 30V, gate electrode voltage variation are -30V to 20V, and light intensity is 8.95 μ W/cm2
With 207.3 μ W/cm2, wavelength is 350nm ultraviolet light and 500nm visible light.
To sum up, the phototransistor test wavelength range that metal-oxide semiconductor (MOS)/perovskite quantum dot combines from
Ultra-violet (UV) band to visual field, and due to the introducing of perovskite quantum dot, compared to intrinsic metal oxide phototransistor, device pair
Low light intensity (8.95 μ W/cm2), have preferably corresponding.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of perovskite quantum dot light electric transistor for weak light detection, it is characterised in that: include:
The base substrate (1) of upper surface level；
Gate electrode (2) is located on base substrate (1)；
Gate dielectric layer (3) and base substrate (1) all-around-gate electrode (2), and projected area is equal to base substrate (1)；
Metal oxide semiconductor films (4) are located on gate dielectric layer (3)；
Source and drain metal electrodes (5) are located on gate dielectric layer (3) and metal oxide semiconductor films (4)；
It is intermediate that charge transport interface layer (6) is located at source and drain metal electrodes (5)；
Perovskite quanta point material layer (7) is located at right above charge transport interface layer (6) and charge transport interface layer is completely covered
(6)；
Metal oxide semiconductor films (4), charge transport interface layer film (6), perovskite quanta point material layer (7) perspective plane
Product is equal to gate electrode (2).
2. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that:
Include:
The base substrate (1) is at least one: silicon substrate, quartz substrate, polyimides PI substrate, gathers to benzene at glass substrate
Naphthalate PET substrate and polyethylene naphthalate PEN substrate；
The gate electrode (2) and source and drain metal electrodes (5) are molybdenum, gold, silver, aluminium, copper product electrode；
The gate dielectric layer (3) is silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material.
3. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that:
Include:
The material of the metal oxide semiconductor films (4) include: indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO,
Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO；
The material of the charge transport interface layer (6) includes: Fullerene C20, fullerene derivate PCBM, fullerene derivate
The mixture of ICBA, fullerene and polymetylmethacrylate；
The chemical formula of the material of the perovskite quanta point material layer (7) is ABX3；A includes methylamine ion CH3NH3 +, methanediamine from
Sub- NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+；B includes lead ion Pb2+, tin ion Sn2+, bismuth ion Bi2+, europium ion Eu2+；
X includes iodide ion I-, chloride ion Cl-Or bromide ion Br-；The perovskite quanta point material layer has broadband absorption range.
4. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that:
Include:
The gate electrode (2) is with a thickness of 30nm to 200nm；
The gate dielectric layer (3) is with a thickness of 100nm to 400nm；
The metal oxide semiconductor films (4) with a thickness of 10nm to 100nm.
5. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that:
Include:
The source and drain metal electrodes (5) are 1um to 100um, width 1um with a thickness of 30nm to 200nm, the channel length of formation
To 1000um；
The charge transport interface layer (6) with a thickness of 10nm to 90nm；
The diameter of the perovskite quanta point material layer (7) is 2-10nm, with a thickness of 2-20nm.
6. a kind of perovskite quantum dot optoelectronic preparation method of transistor for weak light detection, it is characterised in that: include:
Gate electrode (2) is deposited on base substrate (1) using magnetron sputtering method or vacuum vapour deposition, is formed by lithographic process
Gate electrode figure；
Base substrate (1) and gate electrode (2) are deposited on using magnetron sputtering method or chemical vapour deposition technique gate electrode dielectric layer (3)
On, gate electrode figure is formed by lithographic process；
Metal oxide semiconductor films (4) are deposited on by gate electrode dielectric layer (3) using magnetron sputtering method or solution processing method
On, blocky active area figure is formed by lithographic process；
Source and drain metal electrodes (5) are deposited on by gate dielectric layer (3) and metal oxide using magnetron sputtering method or vacuum vapour deposition
On semiconductive thin film (4), source and drain metal electrodes figure is formed by lithographic process；The source and drain metal electrodes (5) and metal oxygen
Compound oxide semiconductor thin-film (4) has certain overlapping；
Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature is 100 DEG C to 450 DEG C,
Annealing time is 0.5 hour to 4 hours；
Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk-screen printing
Method or roll-to-roll print process prepare a layer charge transport interface layer (6) on oxide semiconductor thin-film (4)；
One layer of perovskite quantum dot is prepared on charge transport interface layer (6) using solution spin-coating method or knife coating or spray coating method
Material layer (7).
7. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6,
It is characterized in that: including:
By silicon substrate, glass substrate, quartz substrate, polyimides PI substrate, polyethylene terephtalate substrate and
Polyethylene naphthalate PEN substrate at least one makes the base substrate (1)；
Pass through gate electrode (2) described in molybdenum, gold, silver, aluminium, copper product electrode fabrication；
Pass through silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material makes the gate dielectric layer (3).
8. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6,
It is characterized in that: including:
Pass through indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesiam-zinc-oxygen
Compound MZO material makes the metal oxide semiconductor films (4)；
Pass through source and drain metal electrodes (5) described in molybdenum, gold, silver, aluminium, copper product electrode fabrication；
Pass through Fullerene C20, fullerene derivate PCBM, fullerene derivate ICBA, fullerene and polymethyl methacrylate
The mixture material of PMMA makes the charge transport interface layer (6)；
The chemical formula for making the material of the perovskite quanta point material layer (7) is ABX3；A includes methylamine ion CH3NH3 +, first two
Amine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+；B includes lead ion Pb2+, tin ion Sn2+, bismuth ion Bi2+, europium ion
Eu2+；X includes iodide ion I-, chloride ion Cl-Or bromide ion Br-；The perovskite quanta point material layer has broadband absorption model
It encloses.
9. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6,
It is characterized in that: including:
The gate electrode (2) is set with a thickness of 30nm to 200nm；
The gate dielectric layer (3) is set with a thickness of 100nm to 400nm；
Be arranged the metal oxide semiconductor films (4) with a thickness of 10nm to 100nm.
10. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6,
It is characterized in that: including:
The source and drain metal electrodes (5) are set with a thickness of 30nm to 200nm, the channel length of formation is 1um to 100um, width
For 1um to 1000um；
Be arranged the charge transport interface layer (6) with a thickness of 10nm to 90nm；
The diameter that the perovskite quanta point material layer (7) is arranged is 2-10nm, with a thickness of 2-20nm.
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