CN103944534A - Digital phase shifter - Google Patents
Digital phase shifter Download PDFInfo
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- CN103944534A CN103944534A CN201410169560.XA CN201410169560A CN103944534A CN 103944534 A CN103944534 A CN 103944534A CN 201410169560 A CN201410169560 A CN 201410169560A CN 103944534 A CN103944534 A CN 103944534A
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- phase shifter
- digital phase
- present
- heterojunction
- contact electrode
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- 230000005669 field effect Effects 0.000 claims abstract description 10
- 230000010363 phase shift Effects 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides a digital phase shifter, wherein a switching device of the digital phase shifter is a high electron mobility field effect transistor with a GaN-based heterojunction, and a Schottky contact electrode and an ohmic contact electrode are arranged on the heterojunction of the field effect transistor. The phase shifter can work under severe conditions of high temperature, high power and the like, can further improve the performance of a radar receiving and transmitting assembly, can reduce the size of a device and improve the integration level.
Description
Technical field
The present invention relates to semiconductor device and sensor field, relate in particular to a kind of digital phase shifter.
Background technology
Phase shifter (Phaser Shifter) is a kind of device that can adjust the phase place of ripple.Along with the application such as active phased array radar are towards microminiaturized and practical future development, each element circuit in its assembly is proposed to more and more higher requirement on integrated level and cost, especially phase shifter sort circuit complexity, the high element circuit of required precision.
At present, mainly adopt monolithic integrated microwave circuit (MMIC) technology to carry out designing and making phase shifter, to improve the integrated level of transmitting-receiving subassembly, reduce costs, ensure the consistency of high finished product rate and product simultaneously.Existing phase shifter, mainly adopts High Electron Mobility Transistor (HEMT) technique of GaAs to realize, and along with the requirement to phase shifter performance and integrated level improves, is necessary to propose more high performance digital phase shifter.
Summary of the invention
The present invention is intended to one of address the above problem, and a kind of digital phase shifter with better performance is provided.
For achieving the above object, the embodiment of the present invention provides following technical scheme:
A kind of digital phase shifter, the switching device of this digital phase shifter is the high electron mobility field-effect transistor with GaN base heterojunction, is provided with Schottky contact electrode and Ohm contact electrode on the heterojunction of this field-effect transistor.
Optionally, this digital phase shifter adopts the digital phase shift circuit that loads line type structure.
Optionally, the electrical length of the main transmission line of this digital phase shift circuit is pi/2, Liang Duan branch transmission line equal in length.
Optionally, the phase-shift phase of this digital phase shifter is 22.5 °.
Optionally, described heterojunction is for to be formed by GaN and AlGaN material.
Optionally, GaN and AlGaN storeroom are also formed with the insert layer of AlN.
The digital phase shifter that the embodiment of the present invention provides, adopt the high electron mobility field-effect transistor of GaN base heterojunction as switching device, it has the features such as high switching speed, high power capacity, low on-resistance and low-power consumption, phase shifter can be operated under the severe condition such as high temperature high power, can further improve the performance of radar transmit-receive assembly, and can reduce the volume of device, improve integrated level.
Brief description of the drawings
Fig. 1 is according to the structural representation of the digital phase shifter of the embodiment of the present invention;
Fig. 2 is according to the schematic cross-section of the HEMT device of the digital phase shifter of the embodiment of the present invention;
Fig. 3 is the frequency-phase shift emulation schematic diagram according to the digital phase shifter of the embodiment of the present invention;
Fig. 4 is according to frequency-input return loss emulation schematic diagram between the input/output port of the digital phase shifter of the embodiment of the present invention;
Fig. 5 is according to frequency-output return loss emulation schematic diagram between the input/output port of the digital phase shifter of the embodiment of the present invention;
Fig. 6 is according to frequency-insertion loss emulation schematic diagram between the input/output port of the digital phase shifter of the embodiment of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details are set forth in the following description so that fully understand the present invention; but the present invention can also adopt other to be different from alternate manner described here and implement; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification following examples done according to technical spirit of the present invention; all still belong in the scope of technical solution of the present invention protection, therefore the present invention is not subject to the restriction of following public specific embodiment.
The present invention proposes a kind of digital phase shifter, shown in figure 1, the switching device 100 of this digital phase shifter, for having the high electron mobility field-effect transistor of GaN base heterojunction, is provided with Schottky contact electrode and Ohm contact electrode on the heterojunction of this field-effect transistor.
In the present invention, adopt the high electron mobility field-effect transistor of GaN base heterojunction as switching device, it has the features such as high switching speed, high power capacity, low on-resistance and low-power consumption, phase shifter can be operated under the severe condition such as high temperature high power, can further improve the performance of radar transmit-receive assembly, and can reduce the volume of device, improve integrated level.
For a better understanding of the present invention, below with reference to specific embodiment, the structure of digital phase shifter of the present invention is described in detail.
In the present embodiment, this digital phase shifter is the digital phase shifter based on MMIC technological design, and in the present embodiment, this phase shifter comprises input/output signal electrode, phase-shift circuit, switching device and offset line.Wherein, input/output signal electrode is 50 ohm of ports; Phase-shift circuit adopts loaded line structure; Switching device is the HEMT device of GaN base heterojunction, and grid are long is 0.35um, and grid width is 100um; Offset line provides switching device required gate source voltage Vg, can be 0V or-5V.
As shown in Figure 1, phase-shift circuit adopts the digital phase shift circuit that loads line type structure, it comprises main transmission line 200 and branch's transmission line 300, the switching device 100 with the HEMT of GaN base heterojunction connects the end of branch's transmission line 300, the conducting by this switching device 100 and close the switching that realizes out of phase.
In the present embodiment, phase-shift phase is 22.5 °, and the electrical length θ of main transmission line is pi/2, and the length of transmission line θ of Liang Duan branch 2 equates, the input that is reflected in that Liang Ge branch loaded line causes is offset, thereby realize good coupling.
In the present invention, the switching device of digital phase shifter is the HEMT device with gallium nitride heterojunction.In the present embodiment, as shown in Figure 2, HEMT device comprises substrate 102, the GaN base heterojunction on substrate 102, source area 108 and drain region 110, and electrode on heterojunction.
In the present embodiment, substrate can be SiC substrate.Heterojunction is formed by GaN layer 107 and the AlGaN layer 106 on it.More preferably, between GaN layer 107 and AlGaN layer 106, also can be formed with the insert layer (scheming not shown) of AlN, to promote two-dimensional electron gas to excite.Electrode comprises Schottky contact electrode 112 and Ohm contact electrode 114, these two electrodes connect with different bias voltage line respectively, to provide switching device different switching voltage values, Ohm contact electrode is for example the lamination of Ti, Al, Ti, Au material, and Schottky contact electrode is for example the lamination of Ni, Au material.
Be more than the digital phase shifter of the embodiment of the present invention, the simulation result schematic diagram of the digital phase shifter that Fig. 3-6 are the embodiment of the present invention under different frequency.The digital phase shifter of the embodiment of the present invention, as shown in Figure 3, within the scope of 9-10GHz, phase shifting accuracy is-2.655-2.562 degree, as Figure 4-Figure 6, and the emulation schematic diagram of the return loss of input/output terminal and insertion loss, wherein, phase shift state Insertion Loss is less than 0.48dB, and reference state Insertion Loss is less than 0.983dB, phase shift state and be all less than-18.8dB of reference state input and output return loss.As can be seen here, this phase shifter can be realized the phase shift of 22.5 degree in 9-10GHz frequency band range.
The present invention discloses as above with preferred embodiment, but not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (6)
1. a digital phase shifter, is characterized in that, the switching device of this digital phase shifter is the high electron mobility field-effect transistor with GaN base heterojunction, is provided with Schottky contact electrode and Ohm contact electrode on the heterojunction of this field-effect transistor.
2. digital phase shifter according to claim 1, is characterized in that, this digital phase shifter adopts the digital phase shift circuit that loads line type structure.
3. digital phase shifter according to claim 2, is characterized in that, the electrical length of the main transmission line of this digital phase shift circuit is pi/2, Liang Duan branch transmission line equal in length.
4. digital phase shifter according to claim 3, is characterized in that, the phase-shift phase of this digital phase shifter is 22.5 °.
5. according to the digital phase shifter described in any one in claim 1-4, it is characterized in that, described heterojunction is for to be formed by GaN and AlGaN material.
6. digital phase shifter according to claim 5, is characterized in that, GaN and AlGaN storeroom are also formed with the insert layer of AlN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410169560.XA CN103944534A (en) | 2014-04-25 | 2014-04-25 | Digital phase shifter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410169560.XA CN103944534A (en) | 2014-04-25 | 2014-04-25 | Digital phase shifter |
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| CN201410169560.XA Pending CN103944534A (en) | 2014-04-25 | 2014-04-25 | Digital phase shifter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107306123A (en) * | 2016-04-20 | 2017-10-31 | 中国科学院微电子研究所 | Digital phase shifter |
| CN107332538A (en) * | 2017-06-27 | 2017-11-07 | 中国科学院微电子研究所 | Digital phase shifter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060065908A1 (en) * | 2004-09-30 | 2006-03-30 | Robert Beach | III-nitride multi-channel heterojunction interdigitated rectifier |
| CN101101935A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method |
| CN101694833A (en) * | 2009-10-20 | 2010-04-14 | 中山大学 | Composite structure AlGaN/GaN field-effect diode and manufacturing method thereof |
| CN102830137A (en) * | 2012-08-31 | 2012-12-19 | 中国科学院微电子研究所 | gallium nitride-based liquid sensor and preparation method thereof |
-
2014
- 2014-04-25 CN CN201410169560.XA patent/CN103944534A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060065908A1 (en) * | 2004-09-30 | 2006-03-30 | Robert Beach | III-nitride multi-channel heterojunction interdigitated rectifier |
| CN101101935A (en) * | 2006-07-06 | 2008-01-09 | 中国科学院半导体研究所 | Ultraviolet detector for improving performance of GaN-based Schottky structure and its making method |
| CN101694833A (en) * | 2009-10-20 | 2010-04-14 | 中山大学 | Composite structure AlGaN/GaN field-effect diode and manufacturing method thereof |
| CN102830137A (en) * | 2012-08-31 | 2012-12-19 | 中国科学院微电子研究所 | gallium nitride-based liquid sensor and preparation method thereof |
Non-Patent Citations (4)
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| 宋烨曦: "Ka波段五位数字移相器的研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 罗源: "高阻硅基微带线及微波数字移相器", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 陈义飞等: "集成压控移相器的发展", 《半导体情报》 * |
| 齐步坤: "数字式移相器电路研究", 《电子世界》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107306123A (en) * | 2016-04-20 | 2017-10-31 | 中国科学院微电子研究所 | Digital phase shifter |
| CN107332538A (en) * | 2017-06-27 | 2017-11-07 | 中国科学院微电子研究所 | Digital phase shifter |
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Application publication date: 20140723 |