CN107306123A - Digital phase shifter - Google Patents
Digital phase shifter Download PDFInfo
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- CN107306123A CN107306123A CN201610249117.2A CN201610249117A CN107306123A CN 107306123 A CN107306123 A CN 107306123A CN 201610249117 A CN201610249117 A CN 201610249117A CN 107306123 A CN107306123 A CN 107306123A
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- phase shifter
- effect transistor
- switch circuit
- digital phase
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
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- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a kind of digital phase shifter.The digital phase shifter includes：First switch circuit；Second switch circuit；Low-pass filter circuit, the first end of low-pass filter circuit is connected with the first end of first switch circuit, and the second end of low-pass filter circuit is connected with the first end of second switch circuit；High-pass filtering circuit, the first end of high-pass filtering circuit is connected with the second end of first switch circuit, and the second end of high-pass filtering circuit is connected with the second end of second switch circuit, and first switch circuit or second switch circuit include：Field-effect transistor, field-effect transistor is GaN base heterojunction transistor, the semiconductor layer formation Ohmic contact of the source of each field-effect transistor, drain electrode with itself in semiconductor layer formation Schottky contacts of the grid of each field-effect transistor with itself, field-effect transistor in field-effect transistor.By the present invention, the problem of phase shifter power margin is low in correlation technique is solved, the effect for improving phase shifter power margin has been reached.
Description
Technical field
The present invention relates to phase shifter field, in particular to a kind of digital phase shifter.
Background technology
Phase shifter (Phase Shifter) is a kind of device that can be adjusted to the phase for transmitting signal.With active
The application such as phased array radar develops towards miniaturization and practical direction, to its transmitter and receiver (Transmitter
And Receiver, referred to as T/R) in component the research of each component units circuit it is also further deep, in integrated level and
Higher and higher requirement is proposed in cost, especially as the phase shifter of one of Key Circuit, because its circuit is complicated,
Required precision is high, and area occupied is big, and technical indicator is more, and design and manufacture difficulty are larger, in being always T/R components
One of cost highest circuit.
At present, mainly using monolithic integrated microwave circuit (Monolithic Microwave Integrated Circuit, abbreviation
For MMIC) technology designs and makes phase shifter, and to improve the integrated level of transmitting-receiving subassembly, cost is reduced, protected simultaneously
Demonstrate,prove high finished product rate and the uniformity of product.Existing phase shifter, mainly using GaAs (GaAs) high electron mobility
It is prepared by rate transistor (High Electron Mobility Transistor, referred to as HEMT).
But at present mostly using the topological structure of loading line style, the structure introduces the microstrip line of λ/4 due to needing, and power holds
Limit is low, is unfavorable for phase shifter integrated level, reduces the requirement of area and the big phase shift number of degrees, with to phase shifter performance with
And the raising of the requirement of integrated level is, it is necessary to prepare the phase shifter of higher performance.
For the problem of digital phase shifter power margin is low in correlation technique, effective solution is not yet proposed at present.
The content of the invention
It is a primary object of the present invention to provide a kind of digital phase shifter, to solve, digital phase shifter power margin is low to ask
Topic.
To achieve these goals, according to an aspect of the invention, there is provided a kind of digital phase shifter, the numeral is moved
Phase device includes：First switch circuit；Second switch circuit；Low-pass filter circuit, the first end of low-pass filter circuit with
The first end connection of first switch circuit, the second end of low-pass filter circuit is connected with the first end of second switch circuit；
And high-pass filtering circuit, the first end of high-pass filtering circuit is connected with the second end of first switch circuit, high-pass filtering
Second end of circuit is connected with the second end of second switch circuit, wherein, first switch circuit or second switch circuit bag
Include：Field-effect transistor, wherein, field-effect transistor is GaN base heterojunction transistor, every in field-effect transistor
Each field in semiconductor layer formation Schottky contacts of the grid of individual field-effect transistor with itself, field-effect transistor
Semiconductor layer formation Ohmic contact of the source, drain electrode of effect transistor with itself.
Further, first switch circuit and second switch circuit include four field-effect transistors, wherein, four
Field-effect transistor two branch roads of formation, every branch road includes the field-effect transistor of two earths, first switch
The equivalent circuit of circuit and second switch circuit is single-pole double-throw switch (SPDT) circuit.
Further, GaN base heterojunction transistor is GaN layer and AlGaN layer HFET.
Further, also there is AlN insertion between the GaN layer and AlGaN layer of GaN base heterojunction transistor
Layer.
Further, GaN base heterojunction transistor is high electron mobility field-effect transistor.
Further, the substrate of GaN base heterojunction transistor is SiC.
Further, the digital phase shifter also includes microstrip line, is connected with field-effect transistor.
Further, the grid length of field-effect transistor is 0.25 micron, and grid width is 2 × 100 microns.
Further, the digital phase shifter also includes offset line, for providing bias voltage for field-effect transistor, its
In, bias voltage is 0V or -10V.
Further, the phase-shift phase of digital phase shifter is 45 °, 90 ° or 180 °.
The present invention passes through first switch circuit；Second switch circuit；Low-pass filter circuit, the first of low-pass filter circuit
End is connected with the first end of first switch circuit, and the second end of low-pass filter circuit connects with the first end of second switch circuit
Connect；And high-pass filtering circuit, the first end of high-pass filtering circuit is connected with the second end of first switch circuit, high pass
Second end of filter circuit is connected with the second end of second switch circuit, wherein, wherein, first switch circuit or second
On-off circuit includes：Field-effect transistor, wherein, field-effect transistor is GaN base heterojunction transistor, field-effect
Semiconductor layer formation Schottky contacts of the grid of each field-effect transistor with itself, field effect transistor in transistor
The semiconductor layer formation Ohmic contact of the source of each field-effect transistor, drain electrode with itself, solves correlation in pipe
In technology phase shifter power margin it is low the problem of, and then reached improve phase shifter power margin effect.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, schematic reality of the invention
Apply example and its illustrate to be used to explain the present invention, do not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the schematic diagram of digital phase shifter according to a first embodiment of the present invention；
Fig. 2 is the schematic diagram of digital phase shifter according to a second embodiment of the present invention；
Fig. 3 is the schematic diagram of field-effect transistor according to embodiments of the present invention；
Fig. 4 is frequency-phase shift simulation result schematic diagram of digital phase shifter according to embodiments of the present invention；
Fig. 5 is that frequency-insertion loss emulation is shown between digital phase shifter input/output port according to a first embodiment of the present invention
It is intended to；
Fig. 6 is that frequency-insertion loss emulation is shown between digital phase shifter input/output port according to a second embodiment of the present invention
It is intended to；
Fig. 7 is that frequency-insertion loss emulation is shown between digital phase shifter input/output port according to a third embodiment of the present invention
It is intended to；And
Fig. 8 is digital phase shifter power output according to embodiments of the present invention and GaAs same-phase phase shifter power outputs
Actual measurement contrast schematic diagram.
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order that those skilled in the art more fully understand application scheme, below in conjunction with the embodiment of the present application
Accompanying drawing, the technical scheme in the embodiment of the present application is clearly and completely described, it is clear that described embodiment
The only embodiment of the application part, rather than whole embodiments.Based on the embodiment in the application, ability
The every other embodiment that domain those of ordinary skill is obtained under the premise of creative work is not made, should all belong to
The scope of the application protection.
It should be noted that term " first " in the description and claims of this application and above-mentioned accompanying drawing, "
Two " etc. be for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that this
The data that sample is used can be exchanged in the appropriate case, so as to embodiments herein described herein.In addition, term
" comprising " and " having " and their any deformation, it is intended that covering is non-exclusive to be included, for example, comprising
The process of series of steps or unit, method, system, product or equipment are not necessarily limited to those steps clearly listed
Rapid or unit, but may include not listing clearly or intrinsic for these processes, method, product or equipment
Other steps or unit.
The embodiments of the invention provide a kind of digital phase shifter.
Fig. 1 is the schematic diagram of digital phase shifter according to a first embodiment of the present invention, as shown in figure 1, the digital phase shift
Device includes：
First switch circuit 10；
Second switch circuit 20；
Wherein, first switch circuit or second switch circuit include：Field-effect transistor, wherein, field-effect transistor
For GaN base heterojunction transistor, semiconductor of the grid of each field-effect transistor with itself in field-effect transistor
Layer forms Schottky contacts, and the source of each field-effect transistor, drain electrode are partly led with itself in field-effect transistor
Body layer forms Ohmic contact.
Multiple field-effect transistors in first switch circuit or second switch circuit can be GaN in whole or in part
Semiconductor layer formation Schottky contacts of each grid with itself in based heterojunction transistor, field-effect transistor,
The semiconductor layer formation Ohmic contact of source, drain electrode with itself.
Preferably, multiple field-effect transistors in first switch circuit and second switch circuit are all different using GaN base
Matter junction transistors, the semiconductor layer formation Schottky contacts of each grid with itself, source, drain electrode and itself
Semiconductor layer formation Ohmic contact, enable to the performance of digital phase shifter more excellent.
In first switch circuit and second switch circuit, one in multiple field-effect transistors or certain is several or complete
Portion is that GaN base heterojunction transistor is included within protection scope of the present invention.
Low-pass filter circuit 30, the first end of low-pass filter circuit is connected with the first end of first switch circuit 10, low
Second end of bandpass filter circuit is connected with the first end of second switch circuit 20；
High-pass filtering circuit 40, the first end of high-pass filtering circuit is connected with the second end of first switch circuit 10, high
Second end of bandpass filter circuit is connected with the second end of second switch circuit 20.
In embodiments of the present invention, first switch circuit 10 and second switch circuit 20 can all include four field-effects
Transistor, wherein, each field-effect transistor is GaN base heterojunction transistor, the material and knot of four transistors
Structure can be with identical, it is possibility to have some less differences.GaN base hetero-junctions can be that GaN mixes with multiple material
The miscellaneous semiconductor layer being prepared into.The grid of field-effect transistor and semiconductor layer formation Schottky contacts, for example, Xiao Te
Base contact electrode can be the lamination of Ni, Au material.Source, drain electrode and the field-effect transistor of field-effect transistor
Semiconductor layer formation Ohmic contact, Ohm contact electrode can be the lamination of Ti, Al material or Ti, Au material.
The embodiment of the present invention is by using field-effect transistor of the GaN base heterojunction transistor as digital phase shifter, energy
The phase shifting accuracy of digital phase shifter is enough improved, while also improving the power margin of digital phase shifter.The phase shifter can be with
It is operated under the mal-conditions such as high temperature high power, the phase shift number of degrees of big phase can be obtained, improves phase shifting accuracy in frequency range,
Phase error in frequency range is reduced, further improves the performance of radar transmit-receive component, power margin is improved, integrated level is improved.
Fig. 2 is the schematic diagram of digital phase shifter according to a second embodiment of the present invention, and the embodiment can be used as above-mentioned
The preferred embodiment of one embodiment, as shown in Fig. 2 the digital phase shifter includes：
First switch circuit 10；
Second switch circuit 20；
First switch circuit 10 and second switch circuit 20 include：Four field-effect transistors, field-effect transistor
It is pure parallel-connection structure as switching device, wherein, field-effect transistor is GaN base heterojunction transistor, field-effect
The grid of transistor and the semiconductor layer formation Schottky contacts of field-effect transistor, the source of field-effect transistor, electric leakage
The semiconductor layer formation Ohmic contact of pole and field-effect transistor.
Low-pass filter circuit 30, the first end of low-pass filter circuit 30 is connected with the first end of first switch circuit 10,
Second end of low-pass filter circuit 30 is connected with the first end of second switch circuit 20.
Low-pass filter circuit 30 includes：First self-induction coil, the second self-induction coil and the first electric capacity, the first self-induction coil
First end be connected with the first end of first switch circuit 10, the second end of the first self-induction coil and the second self-induction coil
First end and the connection of the first end of the first electric capacity, the second end ground connection of the first electric capacity, the second end of the second self-induction coil
It is connected with the first end of second switch circuit 20.
High-pass filtering circuit 40, the first end of high-pass filtering circuit 40 is connected with the second end of first switch circuit 10,
Second end of high-pass filtering circuit 40 is connected with the second end of second switch circuit 20.High-pass filtering circuit 40 includes the
Three self-induction coils and the 4th self-induction coil and the second electric capacity, wherein, first end and the first switch electricity of the 3rd self-induction coil
Second end on road 10 and the first end connection of the second electric capacity, the second end ground connection of the 3rd self-induction coil, the second electric capacity
Second end is connected with the first end of the 4th self-induction coil and the second end of second switch circuit 20, the 4th self-induction coil
Second end is grounded.
The digital phase shifter uses the circuit topology of height formula, it is preferable that the material and knot of four field-effect transistors
Structure is identical, and four field-effect transistor two branch roads of formation, every branch road includes the field-effect of two earths
Transistor, for example, the first field-effect transistor of first switch circuit 10 and the second field-effect transistor earth,
First pole of the first field-effect transistor and the connection of the first pole of the second field-effect transistor, and with low-pass filter circuit 30
The first self-induction coil connection, the second pole of the first field-effect transistor and the second pole of the second field-effect transistor all connect
Ground.3rd field-effect transistor and the 4th field-effect transistor earth, wherein, the of the 3rd field-effect transistor
One pole and the connection of the first pole of the 4th field-effect transistor, and be connected with the first end of high-pass filtering circuit 40, the 3rd
Second pole of effect transistor is grounded with the second pole of the 4th field-effect transistor.When digital phase shifter works, first
The working condition of field-effect transistor and the second field-effect transistor is identical, the 3rd field-effect transistor and the 4th field-effect
The working condition of transistor is identical, when the first field-effect transistor and the unlatching of the second field-effect transistor, the 3rd effect
Transistor and the 4th field-effect transistor is answered to close；Conversely, when the first field-effect transistor and the second field-effect transistor
During closing, the 3rd field-effect transistor and the 4th field-effect transistor are opened, therefore the equivalent electric of first switch circuit 10
Road is single-pole double-throw switch (SPDT) circuit.The different conditions closed by the conducting of field-effect transistor in two branch roads up and down,
Propagation of the signal in different branch is realized, that is, forms the switching of out of phase.
In the present embodiment, phase-shift phase is 180 °, and low-pass filter circuit 30 is realized to the delayed of phase, high-pass filtering
Circuit 40 is realized to the advanced of phase.The phase-shift phase of two-way transmission network changes with frequency, its phase shift in certain frequency range
Change slope equal, thus realize stabilization of 180 ° of phase differences in required frequency range.Branch point is to field-effect transistor
Connected between device by microstrip line 50 and 60, by the debugging to microstrip line 50 and 60, so as to realize good
Match somebody with somebody.
Second switch circuit 20 is identical with the structure of first switch circuit 10, the equivalent circuit of second switch circuit 20
For single-pole double-throw switch (SPDT).
The first end of first field-effect transistor, the first end of the second field-effect transistor also with the first microstrip line 50
One end is connected, the first end of the 3rd field-effect transistor and the first end of the 4th field-effect transistor and the first microstrip line 50
The second end connection.
The connected mode of the field-effect transistor of second switch circuit 20 and the second microstrip line 60 and first switch circuit 10
It is identical.Wherein, the first microstrip line 50 is identical with the second microstrip line 60.
Preferably, GaN base heterojunction transistor is GaN layer and AlGaN layer HFET, is more entered
One step, also there is AlN insert layer between the GaN layer and AlGaN layer of GaN base heterojunction transistor, lead to
Crossing addition AlN insert layer can promote two-dimensional electron gas to excite, and to realize more preferable field-effect transistor performance, carry
High phase shifter power margin, and then lift the performance of digital phase shifter.
Alternatively, GaN base heterojunction transistor is high electron mobility field-effect transistor, can use top-gated apical grafting
Touch structure, it would however also be possible to employ other structures.The substrate of GaN base heterojunction transistor is SiC.Specifically, field-effect
The grid length of transistor can be 0.25 micron, and grid width is 2 × 100 microns, wherein, in order to obtain more preferably
Performance, gate shapes can be S types or collapsed shape, therefore can be that in units of 100 microns, grid is
Two unit lengths.GaN base heterojunction transistor has high switching speed, high power capacity, low on-resistance and low
The features such as power consumption so that under conditions of phase shifter can be operated in high temperature high power etc. badly, can further improve thunder
Up to the performance of transmitting-receiving subassembly, and the volume of device can be reduced, improve integrated level.
Digital phase shifter also includes offset line, for providing bias voltage for field-effect transistor, wherein, bias voltage
For 0V or -10V, bias voltage can also be other numerical value, can be adjusted according to actual needs.
Preferably, the digital phase shifter is the digital phase shifter based on monolithic integrated microwave circuit technological design, the phase shift
Device also includes input signal electrode 70 and output signal electrode 80, wherein, input, output signal electrode can all be
50 ohm of ports.Wherein, the digital phase shifter is also designed to chip, can reduce the volume of device, improves power
Tolerance limit, improves integrated level.
By said structure and connection, the phase-shift phase of the digital phase shifter is 180 °.
Digital phase shifter provided in an embodiment of the present invention, using the high electron mobility field effect transistor of GaN base hetero-junctions
Pipe is as switching device, and the pure high low pass of paralleling switch makes it have high switching speed, high power as its topological structure
The features such as capacity, the high phase shift number of degrees, high phase shifting accuracy so that it is severe that phase shifter can be operated in high temperature high power etc.
Under the conditions of, it can further improve the performance of radar transmit-receive component, and the volume of device can be reduced, improve integrated level.
Meanwhile, GaN base high electron mobility field-effect transistor (High Electron Mobility Transistor, referred to as
HEMT) phase shifter can efficiently solve the problem of GaAs HEMT phase shifters power margin is less than normal in the prior art,
So as to realize phase shift function under more high-power, the use of power amplifier can be reduced, so as to reduce phased array
The volume of radar system, improves the performance of complete machine.
Fig. 3 is the schematic diagram of field-effect transistor according to embodiments of the present invention, and the field-effect transistor is that GaN is heterogeneous
The high electron mobility field-effect transistor of knot, the transistor as digital phase shifter switching device.As shown in figure 3,
The field-effect transistor includes the GaN base hetero-junctions 104 on substrate 102, substrate 102, source area 108 and drain electrode
Area 110, and gate electrode 112 and source, drain electrode 114 on hetero-junctions.
In the present embodiment, substrate can be SiC substrate.AlGaN of the GaN base hetero-junctions by GaN layer 104 and thereon
Layer 106 is formed.It is highly preferred that AlN insert layer is may also be formed between GaN layer 104 and AlGaN layer 106,
To promote two-dimensional electron gas to excite.Electrode includes Schottky contact electrode 112 and Ohm contact electrode 114, the two
Electrode is connected with different bias voltage lines respectively, to provide the switching voltage value that switching device is different, Ohmic contact electricity
Extremely can be Ti, Al, the lamination of Ti, Au material or other can form the material of Ohmic contact, Xiao Te
Base, which contacts the lamination that electrode can be Ni, Au material or other, can form the material of Ohmic contact.
It is applied to by the field-effect transistor of the embodiment of the present invention in digital phase shifter, digital phase shifter can be improved
Performance, improves the power margin of phase shifter, also improves the accuracy of phase shift, can also be in more high-power lower realization
Phase shift function, can reduce the use of power amplifier, so as to reduce the volume of phased array radar system, improve complete machine
Performance.
Fig. 4 is frequency-phase shift simulation result schematic diagram of digital phase shifter according to embodiments of the present invention.The emulation is logical
The result of Advanced Design System (Advanced Design System, referred to as ADS) software simulation is crossed, passes through software
The result of simulation can simulate the phase shift result that can be realized by above-mentioned digital phase shifter.As shown in figure 4, horizontal
Coordinate is frequency (freq), and unit is GHz, and ordinate is to shift to error (phs_error), minimum point m5 frequency
For 9.170GHz, Phase-shifting Errors minimum value is -0.472, and peak m6 frequency is 10.00GHz, and Phase-shifting Errors are
0.514, in the range of 8.5-10GHz, phase shifting accuracy is -0.472~0.514 degree.
Fig. 5 is that frequency-insertion loss emulation is shown between digital phase shifter input/output port according to a first embodiment of the present invention
It is intended to.As shown in figure 5, abscissa is frequency (freq), unit is GHz, and ordinate is phase shift state Insertion Loss, dB (S (2,1))
Valley m4 points frequency be 8.700GHz when, phase shift state Insertion Loss be less than 3.016dB, dB (S (4,3)) valley m3
Point is when frequency is 8.500GHz, and reference state Insertion Loss is less than 3.028dB.
Fig. 6 is that frequency-insertion loss emulation is shown between digital phase shifter input/output port according to a second embodiment of the present invention
It is intended to, as shown in fig. 6, abscissa is frequency (freq), unit is GHz, and ordinate is phase shift state Insertion Loss, dB (S (3,3))
Maximum m1 points frequency be 8.500GHz when, phase shift state is respectively less than with reference state input return loss
What another curve was represented in -17.991dB, figure is dB (S (1,1)).
Fig. 7 is that frequency-insertion loss emulation is shown between digital phase shifter input/output port according to a third embodiment of the present invention
It is intended to, as shown in fig. 7, abscissa is frequency (freq), unit is GHz, and ordinate is phase shift state Insertion Loss, dB (S (4,4))
Peak value m2 points frequency be 8.500GHz when, output return loss be respectively less than another song in -18.011dB, figure
What line was represented is dB (S (2,2)).
Fig. 8 is digital phase shifter power output according to embodiments of the present invention and GaAs same-phase phase shifter power outputs
Actual measurement contrast schematic diagram, abscissa is input power, and unit is dBm, and left side ordinate is power output, unit
For dBm, right side ordinate is power compression, and unit is dB, wherein, examples of dot shaped represents digital phase shift of the present invention
Device power-performance, side's point shape represents GaAs same-phase phase shifter power-performances.Filled marks represent phase shifter output
Power is with the change of input power, and open symbols represent change of the phase shifter power compression with input power.Such as Fig. 8 institutes
Show, digital phase shifter of the present invention input power when power compression is 1dB is 35.5dBm, GaAs same-phase phase shifts
Device input power when power compression is 1dB is 30.4dBm, therefore, digital phase shifter of the invention with it is existing
GaAs phase shifters are compared, it is possible to increase input power, and then phase shift function can be realized under more high-power, reduce work(
The use of rate amplifier, so as to reduce the volume of phased array radar system, improves the performance of complete machine.
Above-mentioned dry run result demonstrates the phase shifter can realize the phase of 180 degree in 8.5-10GHz frequency band ranges
Displacement, also, Phase-shifting Errors are small, and phase shifting accuracy is higher.Meanwhile, dry run result also indicates that GaN HEMT are moved
Phase device can efficiently solve the problem of GaAs HEMT phase shifters power margin is less than normal in the prior art, so as to
Phase shift function is realized under more high-power, the use of power amplifier can be reduced, so as to reduce phased array radar system
Volume, improve complete machine performance.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations, and any those skilled in the art are not departing from
Under technical solution of the present invention ambit, all using the methods and techniques content of the disclosure above to technical solution of the present invention
Many possible variations and modification are made, or is revised as the equivalent embodiment of equivalent variations.Therefore, it is every without departing from this
The content of inventive technique scheme, according to the present invention technical spirit to it is made for any of the above embodiments it is any it is simple modification, etc.
With changing and modifying, within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc.,
It should be included in the scope of the protection.
Claims (10)
1. a kind of digital phase shifter, it is characterised in that including：
First switch circuit；
Second switch circuit；
Low-pass filter circuit, the first end of the low-pass filter circuit and the first end of the first switch circuit connect
Connect, the second end of the low-pass filter circuit is connected with the first end of the second switch circuit；And
High-pass filtering circuit, the first end of the high-pass filtering circuit and the second end of the first switch circuit connect
Connect, the second end of the high-pass filtering circuit is connected with the second end of the second switch circuit,
Wherein, the first switch circuit or the second switch circuit include：
Field-effect transistor, wherein, the field-effect transistor is GaN base heterojunction transistor, the field effect
Semiconductor layer formation Schottky contacts of the grid of each field-effect transistor in transistor with itself are answered, it is described
The source of each field-effect transistor, drain electrode form ohm with the semiconductor layer of itself and connect in field-effect transistor
Touch.
2. digital phase shifter according to claim 1, it is characterised in that the first switch circuit and described second
On-off circuit includes four field-effect transistors, wherein, four field-effect transistor formation two
Branch road, every branch road includes the field-effect transistor of two earths, the first switch circuit and institute
The equivalent circuit for stating second switch circuit is single-pole double-throw switch (SPDT) circuit.
3. digital phase shifter according to claim 1, it is characterised in that the GaN base heterojunction transistor is
GaN layer and AlGaN layer HFET.
4. digital phase shifter according to claim 3, it is characterised in that in the GaN base heterojunction transistor
Also there is AlN insert layer between the GaN layer and AlGaN layer.
5. digital phase shifter according to claim 3, it is characterised in that the GaN base heterojunction transistor is height
Electron mobility field-effect transistor.
6. digital phase shifter according to claim 3, it is characterised in that the lining of the GaN base heterojunction transistor
Bottom is SiC.
7. digital phase shifter according to claim 1, it is characterised in that the digital phase shifter also includes microstrip line,
It is connected with the field-effect transistor.
8. digital phase shifter according to claim 1, it is characterised in that the grid length of the field-effect transistor
For 0.25 micron, grid width is 2 × 100 microns.
9. digital phase shifter according to claim 1, it is characterised in that the digital phase shifter also includes offset line,
For providing bias voltage for the field-effect transistor, wherein, the bias voltage is 0V or -10V.
10. digital phase shifter according to claim 1, it is characterised in that the phase-shift phase of the digital phase shifter is
45 °, 90 ° or 180 °.
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| CN201610249117.2A CN107306123A (en) | 2016-04-20 | 2016-04-20 | Digital phase shifter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610249117.2A CN107306123A (en) | 2016-04-20 | 2016-04-20 | Digital phase shifter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616723A (en) * | 2018-12-19 | 2019-04-12 | 上海秦芯信息科技有限公司 | A kind of high-precision phase shifter applied to 5G millimeter wave base station |
| CN109802652A (en) * | 2019-01-10 | 2019-05-24 | 复旦大学 | A kind of phase shifter of 5G phased array |
| CN110501695A (en) * | 2019-07-31 | 2019-11-26 | 苏州芯智瑞微电子有限公司 | A kind of delay line based on the application of Ka wave band phased-array radar |
| CN113376622A (en) * | 2021-04-29 | 2021-09-10 | 中国科学院空天信息创新研究院 | Millimeter wave phased array radar with low link loss and detection method thereof |
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| CN109802652A (en) * | 2019-01-10 | 2019-05-24 | 复旦大学 | A kind of phase shifter of 5G phased array |
| CN110501695A (en) * | 2019-07-31 | 2019-11-26 | 苏州芯智瑞微电子有限公司 | A kind of delay line based on the application of Ka wave band phased-array radar |
| CN113376622A (en) * | 2021-04-29 | 2021-09-10 | 中国科学院空天信息创新研究院 | Millimeter wave phased array radar with low link loss and detection method thereof |
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