CN110501695A - A kind of delay line based on the application of Ka wave band phased-array radar - Google Patents
A kind of delay line based on the application of Ka wave band phased-array radar Download PDFInfo
- Publication number
- CN110501695A CN110501695A CN201910697557.8A CN201910697557A CN110501695A CN 110501695 A CN110501695 A CN 110501695A CN 201910697557 A CN201910697557 A CN 201910697557A CN 110501695 A CN110501695 A CN 110501695A
- Authority
- CN
- China
- Prior art keywords
- delay line
- application
- wave band
- array radar
- band phased
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/14—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of delay lines
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
- G01S2013/0236—Special technical features
- G01S2013/0245—Radar with phased array antenna
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
- H03K2005/0015—Layout of the delay element
- H03K2005/00195—Layout of the delay element using FET's
Landscapes
- Engineering & Computer Science (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Radar Systems Or Details Thereof (AREA)
Abstract
The application discloses a kind of delay line domain based on the application of Ka wave band phased-array radar.High electron mobility transistor is disposed in gallium arsenide substrate.A kind of delay line based on the application of Ka wave band phased-array radar is designed by level Four delay line, and delay line is constituted by reference to detail and a pair of of single-pole double-throw switch (SPDT) of delay detail series connection.The single-pole double-throw switch (SPDT) is made of two pairs of high electron mobility transistor.Transistor gate is connected with high resistance measurement, and connects DC voltage source, constitutes DC bias circuit.The single-pole double-throw switch (SPDT) changes bias voltage by biasing circuit and controls radio frequency path selection, realizes high-precision delay purpose.A kind of integrated circuit is also disclosed in the application.Delay line provided by the present application based on the application of Ka wave band phased-array radar, has many advantages, such as low-loss, high latency precision and compact circuit size, suitable for the application of Ka wave band phased-array radar.
Description
Technical field
This application involves semiconductor integrated circuit field more particularly to a kind of prolonging based on the application of Ka wave band phased-array radar
Slow line circuit layout.
Background technique
Ka wave band phased-array radar has own strategic significance in modern war；However, delay line is as phased array thunder
Key technology in reaching also attracts attention more and more in recent years.Therefore, design there is low-loss, high-precision to postpone small
Type delay line is equally of great significance.
Summary of the invention
The present invention provides a kind of delay line domains and integrated circuit based on the application of Ka wave band phased-array radar.It should
Delay line is designed by multilevel delay line unit, has the characteristics that low-loss and high latency precision, is suitable for Ka wave band phased-array radar
In.
Thus the technical solution adopted by the present invention is that: it is a kind of based on Ka wave band phased-array radar application delay line version
Scheme, is disposed with high electron mobility transistor in gallium arsenide substrate.
The delay line is designed by three-level delay line, is connected between delay line by impedance matching network
It connects.
Delay line is made of reference detail and a pair of of single-pole double-throw switch (SPDT) of delay detail series connection.
Single-pole double-throw switch (SPDT) is made of symmetrical two pairs of high electron mobility transistor, high electron mobility transistor grid with
High resistance measurement series connection, and DC voltage bias circuit is connected to form with DC voltage source；It is realized by changing bias voltage
The selection of different radio frequency access, and then realize the purpose of signal delay output.
Single-pole double-throw switch (SPDT) in the delay line respectively by different DC biased voltage (V state1、V state2) realize
Selection to different radio frequency access.
Simple transmission line or T-shape detail are selected with reference to detail in the delay cell.
Postpone the resonant element that detail selects capacitor and inductance to constitute, it is different that resonant element quantity difference will lead to delay；
When designing different delays unit, phase delay purpose is realized by adjusting resonant element quantity.
A kind of semiconductor integrated circuit is based on Ka wave band phased array comprising described one kind in the semiconductor integrated circuit
The circuit layout of radar application.
The invention has the advantages that delay line of the present invention can be realized Ka wave band is compact, miniaturized circuit design.Meanwhile
Low-loss, high latency precision can be realized using gallium arsenide substrate high electron mobility transistor, compared to INVENTIONConventional metal-oxide
Semiconductor field, the delay line have more preferably loss, delay performance, suitable for the application of Ka wave band phased-array radar.
Detailed description of the invention
Fig. 1 delay line designs circuit diagram.
Fig. 2 single-pole double-throw switch (SPDT) circuit diagram.
The delay line design principle block diagram that Fig. 3 is applied based on Ka wave band phased-array radar.
The delay line domain that Fig. 4 the application case study on implementation is applied based on Ka wave band phased-array radar.
Specific embodiment
To keep the technical principle, feature and technical effect of technical scheme clearer, below in conjunction with specific implementation
Technical scheme is described in detail in case.
Fig. 1 is the delay line design circuit theory that the application case study on implementation is applied based on Ka wave band phased-array radar
Figure.The selection to reference detail and delay detail is realized by a pair of identical single-pole double-throw switch (SPDT), to realize that signal delay is defeated
Purpose out.
Single-pole double-throw switch (SPDT) shown in Fig. 1 is made of symmetrical two pairs of high electron mobility transistor, and is distributed in portP 1Two sides (shown in Fig. 2).High electron mobility transistor by different bias voltages (V stage1、V stage2) realize that different radio frequency is logical
The selection on road, i.e. portP 1To portP 2Or portP 1To portP 3The selection of radio frequency path.The grid of high electron mobility transistor
Pole connect high-impedance resistors (R dc) realize bias circuit.
Delay line design principle block diagram based on the application of Ka wave band phased-array radar described in Fig. 3.It is more fine in order to realize
Delay purpose, using three-level delay line design form.Maximum power is realized by impedance matching network between delay line
Transmit purpose.Delay line bias voltage, which is split, meets the subsequent delay based on the application of Ka wave band phased-array radar in side
The linearly On-wafer measurement demand of energy.
The delay line domain applied for the application case study on implementation based on Ka wave band phased-array radar described in Fig. 4.Delay
Line unit biasing circuit is split in domain side, facilitates subsequent On-wafer measurement.Pass through impedance matching between three-level delay line
Circuit is connected with each other, and realizes that circuit layout is compact, minimizes purpose, suitable for the application of Ka wave band phased-array radar.
The foregoing is merely the preferable case study on implementation of the application, all at this not to limit the protection scope of the application
Apply within the spirit and principle of technical solution, any modification, equivalent substitution, improvement and etc. done should be included in this Shen
Within the scope of please protecting.
Claims (8)
1. a kind of delay line domain based on the application of Ka wave band phased-array radar, which is characterized in that cloth in gallium arsenide substrate
It is equipped with high electron mobility transistor.
2. a kind of delay line domain based on the application of Ka wave band phased-array radar according to claim 1, feature
It is, the delay line is designed by three-level delay line, is attached between delay line by impedance matching network.
3. a kind of delay line domain based on the application of Ka wave band phased-array radar according to claim 1, feature
It is, delay line is made of reference detail and a pair of of single-pole double-throw switch (SPDT) of delay detail series connection.
4. a kind of delay line domain based on the application of Ka wave band phased-array radar according to claim 1, feature
It is, single-pole double-throw switch (SPDT) is made of symmetrical two pairs of high electron mobility transistor, high electron mobility transistor grid and height
Valued resistor series connection, and DC voltage bias circuit is connected to form with DC voltage source.
5. a kind of delay line domain based on the application of Ka wave band phased-array radar according to claim 1, feature
Be, the single-pole double-throw switch (SPDT) in the delay line respectively by different DC biased voltage (V state1、V state2) realization pair
The selection of different radio frequency access.
6. a kind of delay line domain based on the application of Ka wave band phased-array radar according to claim 1, feature
It is, selects simple transmission line or T-shape detail with reference to detail in the delay cell.
7. a kind of delay line domain based on the application of Ka wave band phased-array radar according to claim 1, feature
It is, the resonant element that delay detail selects capacitor and inductance to constitute, the resonant element can be multiple；In design different delays
When unit, phase delay purpose is realized by adjusting resonant element quantity.
8. a kind of semiconductor integrated circuit, which is characterized in that any comprising claim 1 to 7 in the semiconductor integrated circuit
A kind of circuit layout based on the application of Ka wave band phased-array radar described in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910697557.8A CN110501695A (en) | 2019-07-31 | 2019-07-31 | A kind of delay line based on the application of Ka wave band phased-array radar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910697557.8A CN110501695A (en) | 2019-07-31 | 2019-07-31 | A kind of delay line based on the application of Ka wave band phased-array radar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110501695A true CN110501695A (en) | 2019-11-26 |
Family
ID=68588022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910697557.8A Pending CN110501695A (en) | 2019-07-31 | 2019-07-31 | A kind of delay line based on the application of Ka wave band phased-array radar |
Country Status (1)
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| CN (1) | CN110501695A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5305009A (en) * | 1992-12-10 | 1994-04-19 | Westinghouse Electric Corp. | Hybrid electronic-fiberoptic system for phased array antennas |
| CN1399805A (en) * | 2000-06-14 | 2003-02-26 | K&L微波公司 | Delay line filter |
| CN101141018A (en) * | 2007-10-30 | 2008-03-12 | 南京恒电电子有限公司 | Microwave controllable multiple wavelengths delay-line phase moving method and phase shifter |
| CN103259506A (en) * | 2012-01-27 | 2013-08-21 | 飞思卡尔半导体公司 | Delay line phase shifter with selectable phase shift |
| CN204349944U (en) * | 2014-12-26 | 2015-05-20 | 成都华光瑞芯微电子股份有限公司 | A kind of pattern-band single-pole double-throw switch (SPDT) |
| CN105811899A (en) * | 2016-04-18 | 2016-07-27 | 宜确半导体（苏州）有限公司 | Power amplifier output stage module and radio frequency front-end module |
| CN107306123A (en) * | 2016-04-20 | 2017-10-31 | 中国科学院微电子研究所 | Digital phase shifter |
| CN107332538A (en) * | 2017-06-27 | 2017-11-07 | 中国科学院微电子研究所 | Digital phase shifter |
-
2019
- 2019-07-31 CN CN201910697557.8A patent/CN110501695A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5305009A (en) * | 1992-12-10 | 1994-04-19 | Westinghouse Electric Corp. | Hybrid electronic-fiberoptic system for phased array antennas |
| CN1399805A (en) * | 2000-06-14 | 2003-02-26 | K&L微波公司 | Delay line filter |
| CN101141018A (en) * | 2007-10-30 | 2008-03-12 | 南京恒电电子有限公司 | Microwave controllable multiple wavelengths delay-line phase moving method and phase shifter |
| CN103259506A (en) * | 2012-01-27 | 2013-08-21 | 飞思卡尔半导体公司 | Delay line phase shifter with selectable phase shift |
| CN204349944U (en) * | 2014-12-26 | 2015-05-20 | 成都华光瑞芯微电子股份有限公司 | A kind of pattern-band single-pole double-throw switch (SPDT) |
| CN105811899A (en) * | 2016-04-18 | 2016-07-27 | 宜确半导体（苏州）有限公司 | Power amplifier output stage module and radio frequency front-end module |
| CN107306123A (en) * | 2016-04-20 | 2017-10-31 | 中国科学院微电子研究所 | Digital phase shifter |
| CN107332538A (en) * | 2017-06-27 | 2017-11-07 | 中国科学院微电子研究所 | Digital phase shifter |
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