CN206820093U - A kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT) - Google Patents
A kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT) Download PDFInfo
- Publication number
- CN206820093U CN206820093U CN201720275013.9U CN201720275013U CN206820093U CN 206820093 U CN206820093 U CN 206820093U CN 201720275013 U CN201720275013 U CN 201720275013U CN 206820093 U CN206820093 U CN 206820093U
- Authority
- CN
- China
- Prior art keywords
- spdt
- throw switch
- pole double
- isolation
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002955 isolation Methods 0.000 title claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 230000002542 deteriorative effect Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Electronic Switches (AREA)
Abstract
The utility model discloses a kind of high-power high-isolation of millimeter wave ultra-wideband to integrate single-pole double-throw switch (SPDT), including a power splitter and 2 single-pole double-throw switch (SPDT)s, and each single-pole double-throw switch (SPDT) includes 6 identicals and stacks FET unit.The beneficial effects of the utility model are：The compact distributed frame of proposition, the power capacity of switch is considerably increased, eliminate the stray inductance for deteriorating switch high-frequency performance, reduce the size of chip, improve the bandwidth of operation of switch, be especially apparent in millimere-wave band effect；Isolation is high；For referring to FET, the advantage of this compact distributed frame maximum can play more；Without direct current biasing, consumed energy, control is not simple.The distributed FET unit that stacks of the compact of proposition can be also used for millimeter wave attenuator, phase shifter etc., reduces chip size, improves bandwidth of operation and power capacity, increases isolation.
Description
Technical field
The present invention relates to semiconductor integrated circuit technical field, especially a kind of high-power high-isolation of millimeter wave ultra-wideband
Integrated single-pole double-throw switch (SPDT).
Background technology
Switch is commonly applied in radio frequency transceiver, is positioned over receiver inlet and emitter output end, is connect for controlling
Receive the switching with emission state.Because position is special, the linearity of switch is the restriction of Receiver And Transmitter overall linearity
Factor.Transmitter output signal power is very high, and receiver typically has very high sensitivity, if the isolation of switch is not
Enough, the high-power signal of the moment transmitting of on off state switching is easy to pour in down a chimney into receiver, causes receiver to damage.Therefore,
For high-power transceiver, one has the switch of high power capacity and high-isolation extremely critical.
In E wave bands, the distributed effects of device are obvious, and FET is not to be regarded as simple ideal element, its source electrode
Physical dimension is larger, can introduce parasitic parameter.Likewise, the stray inductance that a bit of transmission line introduces also produces to circuit performance
Very big influence.How parasitic parameter is reduced, be a huge challenge for designing ultra wide band millimetre-wave circuit.
In general, the power capacity of PIN diode is better than FET, but PIN diode usually require it is extra
DC bias circuit, more multi-energy is consumed, also results in slower switching speed.Using FET Stack Technology, Ke Yiti
High power capacity.But FET is simply stacked, cause chip layout not compact, while bandwidth of operation relative narrower.
The method for improving isolation is to reduce the signal leakage of switch in the off case, signal wire and FET it
Between add quarter-wave transmission line, reduce the coupling between FET and passive structures, can carry switch isolation degree
Height, but it is only applicable to arrowband design.Therefore, it is necessary to invent a kind of structure for effectively reducing parasitic parameter, make integrated hilted broadsword double
Throw switch has high-power and high-isolation performance concurrently in very wide millimeter wave frequency band.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of high-power high-isolation of millimeter wave ultra-wideband is integrated single
Double-pole double throw switch, it is possible to increase bandwidth of operation, power capacity and the isolation of switch.
In order to solve the above technical problems, the present invention, which provides a kind of high-power high-isolation of millimeter wave ultra-wideband, integrates hilted broadsword pair
Throw switch, including a power splitter 1 and 2 single-pole double-throw switch (SPDT)s 2, each single-pole double-throw switch (SPDT) 2 include 6 identicals and stack field
Effect pipe unit 3；As signal input part, the other end divides two-way to connect single-pole double-throw switch (SPDT) 2 for one end of power splitter 1, single per road
Double-pole double throw switch 2 includes 6 stacking FET units 3 being sequentially connected and connects signal output part.
Preferably, stack in FET unit 3, the part of the source electrode of first FET as signal wire, the
The drain electrode of two FETs is connected with ground hole, and the drain electrode of first FET and the source electrode of second FET pass through
One section of shorter transmission line is connected.The clever structure eliminates the stray inductance for deteriorating switch high-frequency performance, greatly increases simultaneously
The power capacity of switch.
Preferably, single-pole double-throw switch (SPDT) is realized using 0.1 micron gallium arsenide gallium semiconductor integrated circuit technique, and the technique is cut
Only frequency is 135GHz, breakdown voltage 9V, can realize high power device in E wave bands.
Preferably, FET is referred to using four, minimum two refer to FET.Power capacity is further increased, meanwhile,
Compact distributed frame reduces chip size and the advantage of raising bandwidth of operation obtains bigger performance.
Preferably, the transmission line width stacked between FET unit is equal with grid width.So whole signal line width
Spend it is identical, without discontinuity.Meanwhile transmission line is bent during cloth version, further reduce chip size.
Preferably, the grid of FET is connected to control voltage pin by three kilohms of resistance.Realize signal and control
Voltage processed is effectively isolated, and grid does not have electric current, therefore switch does not consume power.
Preferably, switch chip has the pin of two control voltages, controls two paths of signals break-make respectively.Control voltage amplitude
For 0V, -3V.
Preferably, switching each branch road can be increased, can also be subtracted using six stacking FET units, unit number
Few, simulation result shows, during using six units, isolation is high, and insertion loss can also receive.
Beneficial effects of the present invention are：The compact distributed frame of proposition, considerably increases the power capacity of switch, goes
Stray inductance except deteriorating switch high-frequency performance, the size of chip is reduced, the bandwidth of operation of switch is improved, in millimeter wave
Duan Xiaoguo is especially apparent；Isolation is high；For referring to FET, the advantage of this compact distributed frame maximum can be sent out more
Wave；Without direct current biasing, consumed energy, control is not simple.The compact of it is proposed is distributed stack FET unit can be with
For millimeter wave attenuator, phase shifter etc., reduce chip size, improve bandwidth of operation and power capacity, increase isolation.
Brief description of the drawings
Fig. 1 is the principle schematic of the single-pole double-throw switch (SPDT) of the present invention.
Fig. 2 is the domain schematic diagram of traditional distributed switch.
Fig. 3, which is that new compact is distributed, stacks FET cell layout schematic diagram.
Fig. 4 is simulation result schematic diagram of the traditional distributed switch performance with connection length of transmission line change.
Fig. 5 is emulation and the test result schematic diagram of the switch insertion loss and isolation of the present invention.
Fig. 6 is the switch input return loss of the present invention and the emulation for exporting return loss and test result schematic diagram.
Fig. 7 is that the switch of the present invention inputs the test result schematic diagram of 1dB compression points at three Frequency points.
Embodiment
The high-power high-isolation of millimeter wave ultra-wideband provided by the invention integrates single-pole double-throw switch (SPDT), employs a kind of new
Compact distributed frame and FET Stack Technology, ultra wide band can be realized with less circuit area, have concurrently it is high-power and
The millimeter wave of high-isolation performance integrates single-pole double-throw switch (SPDT).
As shown in figure 1, the high-power high-isolation of millimeter wave ultra-wideband of the present invention, which integrates single-pole double-throw switch (SPDT), includes a work(
It is divided to device, two single-pole single-throw switch (SPST)s.The single-pole single-throw switch (SPST) includes six identicals and stacks FET unit, using one kind
New compact distributed frame is connected.
As shown in Fig. 2 FET drain and signal wire pass through transmission line TL in traditional distributed switchPARIt is connected, passes
Defeated line TLPAREquivalent to stray inductance, millimetre-wave circuit is extremely sensitive to it, causes switch to be inserted after frequency is higher than 60GHz
Loss and isolation performance deteriorate rapidly, and simulation result is as shown in Figure 4.Transmission line TL between each FET unit simultaneouslyCONIt is long
Degree is restricted, and it can not be less than the width of ground hole, and the size in normally grounded hole is again very big, and this makes fabric swatch lack flexibility.
Fig. 3 is the domain of the FET unit of composition switch.Different from traditional distributed structure, the stacking field-effect
A part of the source electrode of first FET as signal wire in pipe unit, and the drain electrode of second FET and ground hole
It is connected, the drain electrode of first FET is connected with the source electrode of second FET by one section of shorter transmission line.This is new
Structure eliminates the transmission line TL of connection FET drain and signal wirePAR, simultaneous transmission line TLCONLength be no longer limited by
Ground hole size, its length selection have more flexibilities.The size of distributed switch is so reduced, improves its work
Bandwidth.FET unit is using stacking FET technology so that the voltage that wherein each pipe is born is the one of total voltage
Half, substantially increase the power capacity of switch.
Fig. 5 is emulation and the test result of switch insertion loss and isolation.It can be seen that in 30-75GHz frequencies
Section, switch insertion loss are less than 3dB, and isolation is higher than 40dB.In 10-95GHz frequency ranges, switch keeps excellent more than 30dB's
Isolation.And the isolation of general fet switch is between 20dB to 30dB, bandwidth of operation is opened far below the present invention's
Close.
Fig. 6 is emulation and the test result for switching input return loss and exporting return loss.It can be seen that
30-110GHz frequency ranges, the input and output return loss of switch are superior to 10dB, show good broadband performance.
Fig. 7 is the test result that switch inputs 1dB compression points at three Frequency points.It can be seen that switch
It is 20.2dBm at 31GHz to input 1dB compression points, is 17.8dBm at 40GHz, is 17.3dBm at 45GHz.Due to opening
It is too big to close bandwidth of operation, has used two driving amplifier during test.They are to be operated in 28-31GHz input 1dB compressions respectively
The High-power amplifier and be operated in the mid power power amplifier that 34-46.5GHz input 1dB compression points are+22dBm that point is+35dBm.
In higher millimeter wave frequency band, due to lacking the power amplifier of enough power, so without test result.
The high-power high-isolation of millimeter wave ultra-wideband of the present invention is integrated single-pole double-throw switch (SPDT) and integrated using gallium arsenide semiconductor
Circuit technology is realized.The distributed FET unit that stacks of the compact of proposition can be also used for millimeter wave attenuator, phase shifter
Deng reducing chip size, improve bandwidth of operation and power capacity, increase isolation.
Although the present invention is illustrated and described with regard to preferred embodiment, it is understood by those skilled in the art that
Without departing from scope defined by the claims of the present invention, variations and modifications can be carried out to the present invention.
Claims (6)
1. a kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT), it is characterised in that including：One work(point
Device (1) and 2 single-pole double-throw switch (SPDT)s (2), each single-pole double-throw switch (SPDT) (2) include 6 identicals and stack FET unit
(3)；As signal input part, the other end divides two-way to connect single-pole double-throw switch (SPDT) (2) for one end of power splitter (1), double per road hilted broadsword
Throw switch (2) includes the 6 stacking FET unit (3) being sequentially connected connection signal output parts.
2. the high-power high-isolation of millimeter wave ultra-wideband as claimed in claim 1 integrates single-pole double-throw switch (SPDT), it is characterised in that
Stack in FET unit (3), the part of the source electrode of first FET as signal wire, second FET
Drain electrode is connected with ground hole, and first draining for FET passes through one section of shorter transmission with the source electrode of second FET
Line is connected.
3. the high-power high-isolation of millimeter wave ultra-wideband as claimed in claim 1 integrates single-pole double-throw switch (SPDT), it is characterised in that
Single-pole double-throw switch (SPDT) is realized using 0.1 micron gallium arsenide gallium semiconductor integrated circuit technique.
4. the high-power high-isolation of millimeter wave ultra-wideband as claimed in claim 2 integrates single-pole double-throw switch (SPDT), it is characterised in that
Stack FET unit (3) and refer to FET using four.
5. the high-power high-isolation of millimeter wave ultra-wideband as claimed in claim 4 integrates single-pole double-throw switch (SPDT), it is characterised in that
The transmission line width stacked between FET unit (3) is equal with grid width.
6. the high-power high-isolation of millimeter wave ultra-wideband as claimed in claim 5 integrates single-pole double-throw switch (SPDT), it is characterised in that
The grid for stacking FET unit (3) is connected to control voltage pin by three kilohms of resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720275013.9U CN206820093U (en) | 2017-03-21 | 2017-03-21 | A kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720275013.9U CN206820093U (en) | 2017-03-21 | 2017-03-21 | A kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206820093U true CN206820093U (en) | 2017-12-29 |
Family
ID=60751440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720275013.9U Active CN206820093U (en) | 2017-03-21 | 2017-03-21 | A kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206820093U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069152A (en) * | 2017-03-21 | 2017-08-18 | 南京米乐为微电子科技有限公司 | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband |
| CN109638390A (en) * | 2018-12-17 | 2019-04-16 | 中国电子科技集团公司第五十五研究所 | The absorption switch of millimeter wave filter with low insertion loss |
-
2017
- 2017-03-21 CN CN201720275013.9U patent/CN206820093U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069152A (en) * | 2017-03-21 | 2017-08-18 | 南京米乐为微电子科技有限公司 | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband |
| CN109638390A (en) * | 2018-12-17 | 2019-04-16 | 中国电子科技集团公司第五十五研究所 | The absorption switch of millimeter wave filter with low insertion loss |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kallfass et al. | Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz | |
| CN114567266B (en) | Low-power-consumption low-noise broadband amplifier | |
| CN107069152A (en) | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband | |
| CN113572466B (en) | Symmetrical single-pole double-throw switch based on power distribution and impedance transformation network technology | |
| CN206820093U (en) | A kind of high-power high-isolation of millimeter wave ultra-wideband integrates single-pole double-throw switch (SPDT) | |
| Biedka et al. | 100MHz to 1GHz on-chip circulator with integrated driver amplifiers | |
| CN100495912C (en) | Microwave millmeter wave broad band three decibel orthogonal digital phase shifter | |
| CN111490763A (en) | Power-resistant field-effect tube switch, switch amplitude limiting chip and radio frequency front-end system | |
| CN113472334B (en) | Asymmetric single-pole double-throw switch based on passive ring structure | |
| CN112134534B (en) | Mode-switchable Doherty power amplifier based on double-compensation reactance and adjustable drain voltage technology | |
| Giofrè et al. | A C-Band GaN single chip front-end for SAR applications | |
| Mei et al. | Single-pole double-throw switch using stacked-FET configuration at millimeter wave frequencies | |
| CN115622507B (en) | Doherty power amplifier with high power back-off range | |
| Kwon et al. | Sub-6 GHz GaAs pHEMT SPDT switch with low insertion loss and high power handling capability using dual-gate technique | |
| CN112305507A (en) | Radar receiving and transmitting assembly using gallium nitride power amplifier | |
| CN116054749A (en) | Load modulation balanced millimeter wave GaN power amplifier chip | |
| Zeng et al. | A 24-30GHz asymmetric SPDT switch for 5G millimeter-wave front-end | |
| CN214177287U (en) | Asymmetric single-pole double-throw switch with high-power processing capacity | |
| Balaban et al. | A Highly Linear D-Band Broadband Down Conversion Mixer in 22-nm FDSOI CMOS | |
| Hangai et al. | 2–12 GHz high-power GaN MMIC switch utilizing stacked-FET circuits | |
| Tsao et al. | A high power Ku-to Ka-band single-pole-double-throw switch with capacitive loading for isolation improvement | |
| Londhe et al. | 30-46 GHz 1.5 dB IL Negative Gate Control SPDT with 24.5 dBm IP1 in 130nm CMOS | |
| CN116707503B (en) | Single-pole double-throw switch circuit, working method and electronic equipment | |
| Tsao et al. | An Ultra-Wideband, High Power and High Isolation Single-Pole-Double-Throw Switch Using Capacitive Loading Approach | |
| CN215773054U (en) | Balanced type concurrent dual-band power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 211100 9 Jiangning Road, Jiangning economic and Technological Development Zone, Nanjing, China Patentee after: Nanjing Milewei Microelectronics Technology Co.,Ltd. Country or region after: China Address before: 9 mozhou East Road, Jiangning District, Nanjing City, Jiangsu Province Patentee before: NANJING MILEWEI Corp. Country or region before: China |