CN107195700A - The uniform silicon p-doped of Electric Field Distribution stops impurity band detector and preparation method thereof - Google Patents
The uniform silicon p-doped of Electric Field Distribution stops impurity band detector and preparation method thereof Download PDFInfo
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- CN107195700A CN107195700A CN201710338660.4A CN201710338660A CN107195700A CN 107195700 A CN107195700 A CN 107195700A CN 201710338660 A CN201710338660 A CN 201710338660A CN 107195700 A CN107195700 A CN 107195700A
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- 239000010703 silicon Substances 0.000 title claims abstract description 101
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- 239000012535 impurity Substances 0.000 title claims abstract description 27
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- 230000008569 process Effects 0.000 claims description 16
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Stop impurity band detector and preparation method thereof the invention provides a kind of uniform silicon p-doped of Electric Field Distribution, the detector leads silicon substrate including height, the height, which is led, includes annular groove region, mesa region and outer peripheral areas on silicon substrate, shown mesa region is arranged in the middle of annular groove region, and shown outer peripheral areas is arranged on annular groove areas outside；Annular negative electrode is provided with the annular groove region, the surface of mesa region is provided with circular positive electrode.The present invention prepares circular positive electrode in mesa region, and annular negative electrode is prepared in annular groove region, reduces photo-generated carrier and leads the probability that defect is captured in silicon substrate by high, enhances collection efficiency；Using annular negative electrode structure, relative to " V " groove negative electrode collection mode, circular positive electrode and annular negative electricity die opening is small, symmetrical configuration, Electric Field Distribution are uniform further enhancing the capacity gauge of photo-generated carrier, improve detector sensitivity.
Description
Technical field
The invention belongs to the preparing technical field of terahertz detection device, and in particular to a kind of uniform silicon of Electric Field Distribution is mixed
Phosphorus stops impurity band detector and preparation method thereof, it is adaptable to which the silicon substrate for making high detectivity stops impurity band terahertz detection
Device.
Background technology
Terahertz signal refers to the electromagnetic radiation of 0.3-10THz scopes, and it has, and penetrability is strong, high resolution, directionality
Good the features such as, the terahertz imaging and spectrum measurement system developed using these features are in survey of deep space, atmospheric monitoring, drugs inspection
The national defence such as survey, quality control, human body safety check and nondestructive inspection, astronomical and civil area have played important function.Wherein, based on too
The survey of deep space and atmospheric monitoring of hertz technology need to complete in space-based test platform, and this is primarily to avoided air to too
The attenuation of hertz signal, so as to reach higher signal to noise ratio.Space-based detection is compared with traditional continental rise is detected, to system resolution
Rate, visual field and frame per second propose higher requirement, thus as core component terahertz detector need higher sensitivity,
Bigger array scale and faster response speed.Silicon substrate stops that impurity band (BIB) detector can realize that 40 μm of Terahertz rings
Should, it is the terahertz detector for being known as being adapted to space-based application in the world.
The collection efficiency of electrode pair photo-generated carrier is to weigh the important indicator of detector sensitivity, existing silicon substrate BIB
" V " groove negative electrode collection mode being used detector, the pattern is typically to form height by ion implanting on High resistivity substrate to lead more
Buried layer, then on buried layer Epitaxial growth absorbed layer and barrier layer, positive electrode is arranged at the top of barrier layer, and negative electrode is also set
Put at the top of barrier layer, and be connected by V grooves with buried layer, see Liao K.S., Li N., Wang C., Li L., et al.,
“Extended mode in blocked impurity band detectors for terahertz radiation
Detection ", Applied Physics Letters, Vol.105, pp 143501-1-143501-5 and Zhu H., Xu
J.T.,Zhu J.Q.,Wang M.,et al.,“The effect of infrared plasmon on the
performance of Si-based THz detectors”,Journal of Materials Science Materials
in Electronics,Vol.28,pp 839-844.It is positive and negative because positive electrode and negative electrode are square-shaped electrode in the pattern
The collection non-uniform electric formed between electrode, therefore the carrier collection ability of diverse location differs greatly, i.e., positive negative electricity
Interpolar is strong at a distance of nearer position capacity gauge, and position capacity gauge apart from each other is weak, thus have impact on detector overall
Collecting effect.In addition, a kind of compensation doping is disclosed in patent CN104993003A stops impurity band terahertz detector core
Piece and preparation method thereof, the detector described in the patent using deep silicon etching due to forming micro- table top and etched surface, i.e. detector
Region in addition to micro- table top is all etched, therefore there is the problem of etching area is larger, etching injury is more serious.
The content of the invention
For defect of the prior art, stop that impurity band is visited the invention provides a kind of uniform silicon p-doped of Electric Field Distribution
Survey device and preparation method thereof.Wherein, the structure that the present invention is provided prepares circular positive electrode in table top upper surface, annular negative electrode
Prepare table top lower surface (i.e. height leads silicon substrate upper surface), therefore reduce photo-generated carrier and defect prisoner in silicon substrate is led by height
The probability obtained, enhances collection efficiency；Meanwhile, the present invention uses the annular negative electrode structure around circular positive electrode, compared to
" V " groove negative electrode collection mode, positive and negative electrode spacing is small, symmetrical configuration, Electric Field Distribution uniform, therefore further enhancing photoproduction
The capacity gauge of carrier, improves detector sensitivity；Moreover, the silicon p-doped compared to existing micro- mesa etch stops
The groove that width is 100~200 μm, therefore etched surface need to be only etched in impurity band detector, the preparation method that the present invention is provided
Product is substantially reduced, and significantly reduces the damage that etching is caused to detector.
The purpose of the present invention is achieved through the following technical solutions：
Stop that impurity band detector, including height lead silicon substrate the invention provides a kind of uniform silicon p-doped of Electric Field Distribution,
The height, which is led, includes annular groove region, mesa region and outer peripheral areas on silicon substrate, shown mesa region is set
In the middle of annular groove region, shown outer peripheral areas is arranged on annular groove areas outside；The height in the annular groove region is led
On silicon substrate, annular groove region be connected with mesa region or outer peripheral areas to be formed annular groove side be respectively provided with nitridation
The height of silicon passivation layer, the mesa region and outer peripheral areas is led sets gradually the absorption of silicon p-doped from top to bottom on silicon substrate
Layer, HIGH-PURITY SILICON barrier layer, positive electrode contact layer and silicon nitride passivation；Annular negative electricity is provided with the annular groove region
Pole, the surface of mesa region is provided with circular positive electrode.
Preferably, the annular negative electrode is led silicon substrate with height and is connected, and the circular positive electrode connects with positive electrode contact layer
Connect.
Preferably, the depth in the annular groove region is 25~40 μm, and width is 100~200 μm.
Preferably, the doping concentration of phosphonium ion is 5 × 10 in the silicon p-doped absorbed layer17~1 × 1018cm-3, the silicon
The thickness of p-doped absorbed layer is 20~30 μm.The thickness on the HIGH-PURITY SILICON barrier layer is 5~10 μm；The silicon nitride passivation
Thickness is 220nm.
Present invention also offers the preparation method that a kind of uniform silicon p-doped of Electric Field Distribution stops impurity band detector, including
Following steps：
S1, in height lead on silicon substrate growth silicon p-doped absorbed layer；
S2, the growth HIGH-PURITY SILICON barrier layer on the silicon p-doped absorbed layer；
S3, the formation positive electrode contact layer on the HIGH-PURITY SILICON barrier layer；
S4, from the positive electrode contact layer toward high gallium arsenide substrate etching is led, until etching exposes height and leads GaAs
Substrate, etch areas formation annular groove region, the inner side of annular groove forms mesa region, and outside forms peripheral structure
Region；
S5, through annular groove region, mesa region and peripheral structure region obtained by step S4 surface deposit nitrogen
SiClx passivation layer；
S6, the etched open positive and negative electrode groove on the silicon nitride passivation, the positive electrode groove are located at mesa regions
Domain, the negative electrode groove is located at annular groove region；
S7, on the positive and negative electrode groove positive and negative electrode is deposited, then encapsulates, you can.
Preferably, in step S1, the growing method of the silicon p-doped absorbed layer is chemical vapour deposition technique；In step S2,
The growing method on the HIGH-PURITY SILICON barrier layer is chemical vapour deposition technique；In step S5, the growth side of the silicon nitride passivation
Method is plasma enhanced chemical vapor deposition method；In step S6, the lithographic method is reactive ion etching method, etching depth
For 220nm.
Preferably, in step S3, photoetching, ion implanting and rapid thermal anneal process formation positive electrode contact layer are passed through；Note
Enter ion for phosphonium ion, Implantation Energy is 40~70keV, implantation dosage is 2~5 × 1014cm-2, implant angle is 7 degree；It is described
In the rapid thermal anneal step for forming positive electrode contact layer, protective atmosphere is nitrogen, and annealing temperature is 1000 DEG C, when annealing is kept
Between be 15 seconds.
Preferably, in step S4, the lithographic method in the annular groove region is deep silicon etching method；Etching gas C4F8Stream
Measure as 80SCCM, etching gas SF6Flow is 280SCCM, etching gas O2Flow is 28SCCM, and plasma source power is
1500W, substrate bias power is 40W, and the depth of groove that etching is formed is 25~40 μm, and width is 100~200 μm.
Preferably, in step S7, the method for the evaporation positive and negative electrode is specially：On positive and negative electrode hole from top to bottom
Titanium, aluminium, titanium, golden metal film are deposited successively, evaporation thickness is respectively 20nm, 100nm, 30nm, 180nm.
Preferably, also include carrying out evaporation thickening again to the positive and negative electrode after evaporation in step S7, specific method is：From
Under to upper evaporation nickel successively and golden metal film, the thickness of evaporation nickel is that 30nm, the thickness of gold evaporation are 200nm；
In step S7, the method for packing specifically includes following steps：Using emery wheel scribing method by Device singulation, using low
Warm insulating cement bonds together the device after segmentation and heat sink substrate, is then drawn using gold wire ball welding method access positive and negative electrode
Line.
Detector operation principle of the present invention is：The terahertz emission of normal incidence may pass through positive electrode contact layer and resistance
Barrier, produces photo-generated carrier after being absorbed by the absorption layer, photo-generated carrier can add under the driving of electric field along the energy band of bending
Speed motion, until being collected by electrode, so that terahertz light signal is converted into electric signal, photo-generated carrier mentioned here includes
Light induced electron and photoproduction room, wherein light induced electron are collected by positive electrode, and photoproduction room is collected for negative electrode.Because the present invention is adopted
With the annular negative electrode structure for surrounding circular positive electrode, positive and negative electrode spacing is small, symmetrical configuration, Electric Field Distribution uniform, can enter
One step strengthens the capacity gauge of photo-generated carrier, so as to improve detector sensitivity.
Compared with prior art, the present invention has following beneficial effect：
1st, circular positive electrode is prepared in table top upper surface, in table top lower surface, (i.e. height leads silicon lining for annular negative electrode preparation
Bottom upper surface), reduce photo-generated carrier and lead the probability that defect is captured in silicon substrate by high, enhance collection efficiency；
2nd, using the annular negative electrode structure around circular positive electrode, compared to " V " groove negative electrode collection mode, positive negative electricity
Die opening is small, symmetrical configuration, Electric Field Distribution uniform, further enhancing the capacity gauge of photo-generated carrier, improves detector
Sensitivity.
3. the silicon p-doped compared to existing micro- mesa etch stops impurity band detector, the preparation method that the present invention is provided
In need to only to etch width be 100~200 μm of groove, therefore etching area is substantially reduced, and significantly reduces etching to detection
The damage that device is caused.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, further feature of the invention,
Objects and advantages will become more apparent upon：
Fig. 1 stops the fabrication processing figure of impurity band detector for the uniform silicon p-doped of Electric Field Distribution of the present invention；
Fig. 2 stops section and the plan structure signal of impurity band detector for the uniform silicon p-doped of Electric Field Distribution of the present invention
Figure；Wherein Fig. 2 a are profile；Fig. 2 b are top view；
Fig. 3 is to lead the device architecture schematic diagram after silicon p-doped absorbed layer is grown on silicon substrate in height；
Fig. 4 is that the device architecture schematic diagram behind HIGH-PURITY SILICON barrier layer is grown on silicon p-doped absorbed layer；
Fig. 5 is the device architecture schematic diagram after the formation positive electrode contact layer on HIGH-PURITY SILICON barrier layer；
Fig. 6 is the device architecture schematic diagram after deep silicon etching formation table top；
Fig. 7 is the device architecture schematic diagram after deposited silicon nitride passivation layers；
Fig. 8 is the device architecture schematic diagram after the etched open positive and negative electrode groove on silicon nitride passivation；
Fig. 9 is the enhancing collection mode of the present invention and the experiment test effect contrast figure of conventional acquisition pattern；
In figure：
1 --- height leads silicon substrate；
2 --- silicon p-doped absorbed layer；
3 --- HIGH-PURITY SILICON barrier layer；
4 --- positive electrode contact layer；
5 --- silicon nitride passivation；
6 --- negative electrode groove；
7 --- positive electrode groove；
8 --- annular negative electrode；
9 --- circular positive electrode.
Embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the technology of this area
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that to the ordinary skill of this area
For personnel, without departing from the inventive concept of the premise, some changes and improvements can also be made.These belong to the present invention
Protection domain.
Embodiment
The uniform silicon p-doped of a kind of Electric Field Distribution that the present embodiment is provided stops impurity band detector, its structure such as Fig. 2 institutes
Show, including height leads silicon substrate 1, the height, which is led, includes annular groove region, mesa region and outer peripheral areas on silicon substrate 1,
Shown mesa region is arranged in the middle of annular groove region, and shown outer peripheral areas is arranged on annular groove areas outside；Institute
The height for stating annular groove region is led on silicon substrate 1, annular groove region is connected what is formed with mesa region or outer peripheral areas
Annular groove side is respectively provided with silicon nitride passivation 5, and the height of the mesa region and outer peripheral areas is led on silicon substrate 1 under
To above setting gradually silicon p-doped absorbed layer 2, HIGH-PURITY SILICON barrier layer 3, positive electrode contact layer 4 and silicon nitride passivation 5；The annular
Annular negative electrode 8 is provided with recess region, the surface of mesa region is provided with circular positive electrode 9.
The annular negative electrode is led silicon substrate 1 with height and is connected, and the circular positive electrode is connected with positive electrode contact layer 4.
The depth in the annular groove region is 25~40 μm, and width is 100~200 μm.
The doping concentration of phosphonium ion is 5 × 10 in the silicon p-doped absorbed layer 216~1 × 1018cm-3, the silicon p-doped suction
The thickness for receiving layer 2 is 20~30 μm.
The thickness on the HIGH-PURITY SILICON barrier layer 3 is 5~10 μm；The thickness of the silicon nitride passivation 5 is 220nm.
Its preparation method is as shown in figure 1, comprise the following steps：
P1, height is led silicon substrate 1 and cleaned：It is respectively ultrasonic 5 minutes respectively using acetone and isopropanol first, deionized water rinsing；
Then volume proportion HF is used：H2O=1：10 solution soaks 10 seconds, deionized water rinsing, nitrogen drying；
P2, chemical vapor deposition growth absorbed layer：Lead on silicon substrate 1, given birth to using chemical vapor deposition method extension in height
Long silicon p-doped absorbed layer 2, growth thickness is 20~30 μm, and adulterate phosphonium ion, and doping concentration is 5 × 1016~1 × 1018cm-3(see
Fig. 3)；
P3, chemical vapor deposition growth barrier layer：On silicon p-doped absorbed layer 2, grown using chemical vapor deposition method
HIGH-PURITY SILICON barrier layer 3, deliberately do not adulterate any impurity ion, and growth thickness is 5~10 μm (see Fig. 4)；
P4, first time photoetching：In the surface spin coating positive photoresist AZ5214 of HIGH-PURITY SILICON barrier layer 3,1.6 μm of thickness exposes 6.5 seconds,
Development 45 seconds, deionized water rinsing, nitrogen drying, to form photo-etching mark regional window；
P5, removing of photoresist by plasma：Using oxygen gas plasma degumming process, the photoresist bottom remained after exposure imaging is removed
Film；
P6, is deposited photo-etching mark：On the surface of HIGH-PURITY SILICON barrier layer 3, photo-etching mark is deposited using electron beam evaporation process, according to
Secondary evaporation nickel, golden metal film, thickness is respectively 30nm, 160nm；
P7, is peeled off：Peeled off, soaked 120 minutes using acetone, isopropanol soaks 10 minutes, deionized water rinsing, nitrogen
Air-blowing is done；
P8, second of photoetching：In the surface spin coating positive photoresist AZ4620 of HIGH-PURITY SILICON barrier layer 3,6 μm of thickness exposes 25 seconds, development
90 seconds, deionized water rinsing, nitrogen drying formed ion implanted regions window；
P9, removing of photoresist by plasma：Using oxygen gas plasma degumming process, the light remained after exposure imaging is further removed
Photoresist counterdie；
P10, post bake：Post bake, 110 DEG C of post bake temperature, 10 minutes post bake time, to improve light are carried out to photoresist AZ4620
Photoresist AZ4620 adhesiveness and mask protection ability.
P11, ion implanting：Using ion implantation technology, phosphonium ion is injected into HIGH-PURITY SILICON barrier layer 3, Implantation Energy is 40
~70keV, implantation dosage is 2~5 × 1014cm-2, implant angle is 7 °；
P12, rapid thermal annealing：In nitrogen atmosphere, using rapid thermal anneal process, (rapid thermal anneal process refers to herein
Thermal anneal process of the heating-cooling speed in 20 DEG C/s~250 DEG C/s scopes), heating-cooling speed is 90 DEG C/s, and annealing temperature is
1000 DEG C, the annealing temperature retention time is 15 seconds, activation injection ion, reparation lattice damage, formation positive electrode contact layer 4 (see
Fig. 5)；
P13, third time photoetching：In device surface spin coating positive photoresist AZ4620,6 μm of thickness exposes 25 seconds, develops 90 seconds, go
Ionized water is rinsed, nitrogen drying, to form deep silicon etching regional window；
P14, removing of photoresist by plasma：Using oxygen gas plasma degumming process, further remove what is remained after exposure imaging
Photoresist counterdie；
P15, post bake：Post bake, 110 DEG C of post bake temperature, 10 minutes post bake time, to improve light are carried out to photoresist AZ4620
Photoresist AZ4620 adhesiveness and anti-etching ability.
P16, deep silicon etching：Using deep silicon etching technique, etching gas C4F8Flow is 80SCCM (every point of standard milliliters
Clock), etching gas SF6Flow is 280SCCM, etching gas O2Flow is 28SCCM, and plasma source power is 1500W, bias
Power is 40W, leads silicon substrate etching from the positive electrode contact layer toward the height, until etching exposes height and leads silicon substrate, etches
Depth is 25~40 μm, forms mesa structure (see Fig. 6)；
P17, deposit passivation layer：Using plasma strengthens chemical vapor deposition method, in the upper surface of mesa structure, side
Wall and lower surface deposited silicon nitride passivation layers 5, deposit thickness are 220nm (see Fig. 7)；
P18, four mask：In the surface spin coating positive photoresist AZ5214 of silicon nitride passivation 5,1.6 μm of thickness, exposure 6.5
Second, develop 45 seconds, deionized water rinsing, nitrogen drying, to form window needed for reactive ion etching；
P19, removing of photoresist by plasma：Using oxygen gas plasma degumming process, further remove what is remained after exposure imaging
Photoresist counterdie；
P20, post bake：Post bake, 110 DEG C of post bake temperature, 5 minutes post bake time, to improve light are carried out to photoresist AZ5214
Photoresist AZ5214 adhesiveness and anti-etching ability.
P21, reactive ion etching：Using reactive ion etching process, perform etching, etch on silicon nitride passivation 5
Depth is 220nm, exposes positive electrode contact layer 4；
P22, wet etching：Using volume proportion HF：NH4HF：H2O=1：5：10 solution is soaked 5 seconds, and deionization is rinsed,
Nitrogen is dried up, and to remove the residue after clean reactive ion etching, forms negative electrode groove 6 and positive electrode groove 7 (see Fig. 8)；
P23, the 5th photoetching：Using double-deck glue photoetching process, in device surface successively priority spin coating photoresist LOR10A
With photoresist AZ5214, exposure imaging；
P24, removing of photoresist by plasma：Using argon plasma degumming process, the light remained after clean exposure imaging is removed
Photoresist counterdie；
P25, is deposited positive and negative electrode：Positive and negative electrode, vacuum 5 × 10 are deposited using electron beam evaporation process-4Pa, evaporation
Speed 1nm/s, including evaporation titanium, aluminium, titanium, golden metal film successively from top to bottom, evaporation thickness be respectively 20nm, 100nm,
30nm、180nm；
P26, is peeled off：Peeled off using acetone, 80 DEG C of water-baths 30 minutes are cleaned by ultrasonic 5 minutes, and isopropanol is cleaned by ultrasonic
5 minutes, the tetramethyl Dilute Ammonia Solution of concentration 2.38% soaked 30 seconds, deionized water rinsing, nitrogen drying；
P27, positive and negative electrode annealing：In nitrogen atmosphere, annealing temperature is 400 DEG C, and the annealing temperature retention time is 30 points
Clock, so that electrode formation good ohmic contact；
P28, the 6th photoetching：In device surface successively priority spin coating photoresist LOR10A and photoresist AZ5214, exposure
Development, to expose window area needed for thickening positive and negative electrode；
P29, removing of photoresist by plasma：Using argon plasma degumming process, the light remained after clean exposure imaging is removed
Photoresist counterdie；
P30, thickeies positive and negative electrode：Positive and negative electrode is thickeied using electron beam evaporation process, nickel is deposited successively from top to bottom
With golden metal film, the thickness of evaporation nickel is that 30nm, the thickness of gold evaporation are 200nm；
P31, is peeled off：Peeled off using acetone, 80 DEG C of water-baths 30 minutes are cleaned by ultrasonic 5 minutes, and isopropanol is cleaned by ultrasonic
5 minutes, the tetramethyl Dilute Ammonia Solution of concentration 2.38% soaked 30 seconds, deionized water rinsing, and nitrogen drying completes annular negative
The preparation of electrode 8 and circular positive electrode 9；
P32, encapsulation：Device is split using emery wheel scribing process, positive and negative electrode is completed using gold ball bonding technique
Lead, device is prepared and finished.
Detector made from the present embodiment is used for terahertz detection, experiment test effect as shown in figure 9, as shown in Figure 9,
It is proposed by the present invention enhancing collection mode detector compared with conventional acquisition pattern (" V " groove negative electrode collection mode) detector,
Background current signal is remarkably reinforced, and thus demonstrates the validity of structure of the present invention.
The specific embodiment of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or change within the scope of the claims, this not shadow
Ring the substantive content of the present invention.In the case where not conflicting, feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (10)
1. a kind of uniform silicon p-doped of Electric Field Distribution stops impurity band detector, it is characterised in that lead silicon substrate including height, described
Height, which is led, includes annular groove region, mesa region and outer peripheral areas on silicon substrate, shown mesa region is arranged on ring
In the middle of connected in star region, shown outer peripheral areas is arranged on annular groove areas outside；The height in the annular groove region leads silicon lining
On bottom, annular groove region is connected the annular groove to be formed side with mesa region or outer peripheral areas to be respectively provided with silicon nitride blunt
The height of change layer, the mesa region and outer peripheral areas is led sets gradually silicon p-doped absorbed layer, height from top to bottom on silicon substrate
Pure silicon barrier layer, positive electrode contact layer and silicon nitride passivation；Annular negative electrode, table top are provided with the annular groove region
The surface of structural region is provided with circular positive electrode.
2. the uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector, it is characterised in that described
Annular negative electrode is led silicon substrate with height and is connected, and the circular positive electrode is connected with positive electrode contact layer.
3. the uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector, it is characterised in that described
The depth in annular groove region is 25~40 μm, and width is 100~200 μm.
4. the uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector, it is characterised in that described
The doping concentration of phosphonium ion is 5 × 10 in silicon p-doped absorbed layer17~1 × 1018cm-3, the thickness of the silicon p-doped absorbed layer is 20
~30 μm；The thickness on the HIGH-PURITY SILICON barrier layer is 5~10 μm；The thickness of the silicon nitride passivation is 220nm.
5. the preparation method that a kind of uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector,
It is characterised in that it includes following steps：
S1, in height lead on silicon substrate growth silicon p-doped absorbed layer；
S2, the growth HIGH-PURITY SILICON barrier layer on the silicon p-doped absorbed layer；
S3, the formation positive electrode contact layer on the HIGH-PURITY SILICON barrier layer；
S4, from the positive electrode contact layer toward high gallium arsenide substrate etching is led, until etching exposes height and leads gallium arsenide substrate,
Etch areas formation annular groove region, the inner side of annular groove forms mesa region, and outside forms peripheral structure region；
S5, in the surface deposited silicon nitride through annular groove region, mesa region and peripheral structure region obtained by step S4
Passivation layer；
S6, the etched open positive and negative electrode groove on the silicon nitride passivation, the positive electrode groove are located at mesa region, institute
Negative electrode groove is stated positioned at annular groove region；
S7, on the positive and negative electrode groove positive and negative electrode is deposited, then encapsulates, you can.
6. the preparation method that the uniform silicon p-doped of Electric Field Distribution according to claim 5 stops impurity band detector, it is special
Levy and be, in step S1, the growing method of the silicon p-doped absorbed layer is chemical vapour deposition technique；It is described high-purity in step S2
The growing method on silicon barrier layer is chemical vapour deposition technique；In step S5, the growing method of the silicon nitride passivation for wait from
Daughter strengthens chemical vapour deposition technique；In step S6, the lithographic method is reactive ion etching method, and etching depth is 220nm.
7. the preparation method that the uniform silicon p-doped of Electric Field Distribution according to claim 5 stops impurity band detector, it is special
Levy and be, in step S3, pass through photoetching, ion implanting and rapid thermal anneal process formation positive electrode contact layer；Injecting ion is
Phosphonium ion, Implantation Energy is 40~70keV, and implantation dosage is 2~5 × 1014cm-2, implant angle is 7 degree；The formation positive electricity
In the rapid thermal anneal step of pole contact layer, protective atmosphere is nitrogen, and annealing temperature is 1000 DEG C, and the annealing retention time is 15
Second.
8. the preparation method that the uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector, it is special
Levy and be, in step S4, the lithographic method in the annular groove region is deep silicon etching method；Etching gas C4F8Flow is
80SCCM, etching gas SF6Flow is 280SCCM, etching gas O2Flow is 28SCCM, and plasma source power is 1500W,
Substrate bias power is 40W.
9. the preparation method that the uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector, it is special
Levy and be, in step S7, the method for the evaporation positive and negative electrode is specially：It is deposited successively from top to bottom on positive and negative electrode hole
Titanium, aluminium, titanium, golden metal film, evaporation thickness is respectively 20nm, 100nm, 30nm, 180nm.
10. the preparation method that the uniform silicon p-doped of Electric Field Distribution according to claim 1 stops impurity band detector, it is special
Levy and be,
Also include carrying out evaporation thickening again to the positive and negative electrode after evaporation in step S7, specific method is：Steam successively from top to bottom
Nickel plating and golden metal film, the thickness of evaporation nickel are that 30nm, the thickness of gold evaporation are 200nm；
In step S7, the method for packing specifically includes following steps：Using emery wheel scribing method by Device singulation, then using gold
Pompon welding method accesses positive and negative electrode lead.
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| CN113224193A (en) * | 2021-04-12 | 2021-08-06 | 华南理工大学 | InGaN/GaN multi-quantum well blue light detector combining embedded electrode and passivation layer structure and preparation method and application thereof |
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