CN108878547A - A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency - Google Patents
A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency Download PDFInfo
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- 239000011148 porous material Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000004049 embossing Methods 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 claims abstract description 4
- 238000010168 coupling process Methods 0.000 claims abstract description 4
- 238000005859 coupling reaction Methods 0.000 claims abstract description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910001258 titanium gold Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 241001484259 Lacuna Species 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 36
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- -1 ni au Chemical compound 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The present invention discloses a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency, and structure successively includes from bottom to up：Substrate, buffer layer, nano-pore battle array run through type super short period superlattices and metal electrode；By nanometer embossing and sense coupling microfabrication means, the perforative nanohole array of sequence is formed on plane super short period superlattices；The minimum unit shape of the Kong Zhen, size, period and etching depth are controllable.The metal electrode setting runs through on type super short period superlattices in nano-pore battle array, while metal is injected into nanometer interporal lacuna and forms Schottky contacts with the superlattices absorbed layer under it.The invention avoids in plane superlattices absorbed layer with the surface remotely weaker problem of carrier tunnelling ability, so that the superlattices from surface higher depth absorb outer deep ultraviolet light and are directly collected carrier by metal electrode, the photoelectric current of device is increased effectively, the final external quantum efficiency for improving the narrowband deep ultraviolet MSM photodetector.
Description
Technical field
The present invention relates to a kind of deep ultraviolet MSM photoelectric detectors of high external quantum efficiency, belong to semiconductor photoelectronic device
Technical field.
Background technique
In recent years, had broad application prospects in military and people's livelihood field due to ultraviolet and deep ultraviolet light electric explorer and
Important application value, in the world using ultraviolet detection technology as the Research Emphasis of semiconductor photoelectric device technical field.Its
In, MSM plane configuration photodetector is small by its dark current, fast response time and preparation process are simple, is easy to monolithic collection
At etc. comprehensive advantages, become more common UV photodetector structure.
Material is the basis of device.The AlGaN material of III group Nitride systems has the characteristics that broad-band gap is adjustable, simultaneously
Thermal conductivity and electronics saturation drift velocity height, chemical stability are excellent, can adapt to the severe working environment such as high temperature, intense radiation.
Therefore, the ultraviolet and deep ultraviolet light electric explorer based on AlGaN semiconductor material has become the preferential selection of ultraviolet detection technology.
It is selected however, being currently based on photodetector prepared by conventional AlGaN body material and not having for single wavelength
The ability of detection is selected and accurately distinguishes, for this purpose, Chinese invention patent 201310461747.2 realizes one kind based on two-dimensional crystal lattice
The deep ultraviolet narrowband detector of AlN/GaN solves traditional deep ultraviolet detector Window layer and applies the work of specific wavelength filter plate
Technical problem.In the device architecture, the main plane barrier layer relatively thin using super short period superlattices makes carrier exist
Therebetween collected by tunnelling and metal electrode by surface；It is super from surface higher depth but since this detector uses MSM structure
Photo-generated carrier in lattice is difficult to effectively tunnel through potential barrier and collected by electrode, so that photoelectric current is smaller, to greatly limit
The raising of this kind of new ultra-violet detector external quantum efficiency and the practical application of device are made.Therefore, it is necessary to developmental research
New structure and technology further increases the external quantum efficiency of the ultraviolet narrowband detector of MSM moldeed depth.
Summary of the invention
It is a primary object of the present invention to overcome drawbacks described above in the prior art, a kind of depth of high external quantum efficiency is proposed
Ultraviolet MSM photoelectric detector has completely new mechanism, improves external quantum efficiency.
The present invention adopts the following technical scheme that：
A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency, it is characterised in that：Including from the bottom to top substrate,
Buffer layer, nano-pore battle array run through type super short period superlattices and metal electrode；
The nano-pore battle array is first medium film layer and second medium film layer alternating growth through type super short period superlattices
It forms, and super through type in the nano-pore battle array by nanometer embossing and sense coupling microfabrication means
The perforative nanohole array of sequence is formed on short period superlattice；
Metal electrode setting runs through on type super short period superlattices in nano-pore battle array, while metal is injected into nano-pore battle array
The gap of column, the metal electrode and the nano-pore battle array form Schottky contacts through type super short period superlattices.
Preferably, the substrate is homo-substrate, which is gallium nitride or aluminum-nitride single crystal.
Preferably, the substrate is foreign substrate, which is sapphire or silicon carbide or quartz or monocrystalline silicon.
Preferably, the first medium film layer is gallium nitride single crystal or aluminum gallium nitride mixed crystal, and the second medium film layer is nitrogen
Change aluminium monocrystalline or aluminum gallium nitride mixed crystal.
Preferably, the nano-pore battle array is 25nm~130nm through the radius of the minimum unit of type super short period superlattices.
Preferably, the nano-pore battle array is 100nm~500nm through the hole of the type super short period superlattices battle array period.
Preferably, the nano-pore battle array through type super short period superlattices minimum unit depth be 200nm~
800nm。
Preferably, the metal electrode is to be prepared using high vacuum thermal evaporation or sputtering method, fills the nano-pore battle array
Gap and through the nano-pore battle array run through type super short period superlattices.
Preferably, the metal electrode is one of titanium/gold, ni au, titanium/platinum/gold or rhodium/gold titanium/gold combination.
By the above-mentioned description of this invention it is found that compared with prior art, the present invention has the advantages that：
It is effectively prevented deeper from surface through type super short period superlattices as absorbed layer present invention introduces nano-pore battle array
The problem of place's carrier tunneling transmission ability dies down.In the super short period superlattices absorbed layer of plane configuration, tied when using MSM
When structure, it is difficult to effectively to tunnel through potential barrier from the photo-generated carrier in the higher depth superlattices of surface and is collected by electrode, thus to light
The contribution of electric current is smaller.
Metal electrode is deposited among nano gap through structure by nano-pore provided by the invention so that apart from surface compared with
The carrier that the superlattices of depths generate can directly be filled in the collection of the metal electrode in nano-pore, and no longer need to pass through
Potential barrier carries out layer and the tunnelling of interlayer is captured by electrode again, improves the collection rate of metal electrode and the response photoelectric current of device,
And finally improve the external quantum efficiency of the narrowband deep ultraviolet MSM detector.
Detailed description of the invention
Fig. 1 is a kind of structure chart of the deep ultraviolet MSM photoelectric detector of high external quantum efficiency of the present invention.Wherein 1 indicate lining
Bottom；2 indicate buffer layer；3 indicate that nano-pore battle array runs through the signal period of type super short period superlattices；4 indicate first medium film layer；
5 indicate second medium film layer；6 indicate metal electrode.
Specific embodiment
Below by way of specific embodiment, the invention will be further described.
A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency of the present invention, feature structure are successively wrapped from bottom to up
It includes：Substrate 1, buffer layer 2, nano-pore battle array run through type super short period superlattices and metal electrode 6.Nano-pore battle array is ultrashort through type
Periodic Superlattice is formed by first medium film layer 4 and 5 alternating growth of second medium film layer, by utilizing nanometer embossing and sense
Coupled plasma etch microfabrication means are answered, it is perforative to be formed with sequence on type super short period superlattices in nano-pore battle array
Nanohole array.The minimum unit shape of the nanohole array, size, period and etching depth are controllable.
The setting of metal electrode 6 runs through on type super short period superlattices in nano-pore battle array, while metal is injected into nano-pore
Array gap simultaneously forms Schottky contacts with the superlattices absorbed layer under it.
Substrate 1 is homo-substrate or foreign substrate, and homo-substrate is gallium nitride or aluminum-nitride single crystal；Foreign substrate is blue precious
Stone or silicon carbide or quartz or monocrystalline silicon.Such as:Substrate 1 is sapphire (foreign substrate), and sapphire surface epitaxial growth has slow
Layer 2 is rushed, can be AlN buffer layer, which can be 100nm~1 μm.
Nano-pore battle array is 25nm~130nm, hole battle array period through the radius of its minimum unit of type super short period superlattices
(lattice constant) is 100nm~500nm, and the depth of minimum unit is 200nm~800nm.
Each nano-pore battle array runs through the signal period 3 of type super short period superlattices by first medium film layer 4 and second medium
The formation of film layer 5, the forbidden band of first medium film layer 4 are entirely fallen in the forbidden band of second medium film layer 5, and it is super brilliant to become I class of semiconductor
Lattice, first medium film layer 4 are used as potential well, and second medium film layer 5 is used as potential barrier, and metal electrode 6 is ultrashort through type with nano-pore battle array
Periodic Superlattice 3 forms Schottky contacts.
Wherein first medium film layer 4 can be gallium nitride single crystal or aluminum gallium nitride mixed crystal, and second medium film layer 5 can be aluminium nitride list
Brilliant or aluminum gallium nitride mixed crystal, 4 material of first medium film layer are GaN.Preferably, 5 material of second medium film layer is AlN.
Metal electrode 6 is to be prepared using high vacuum thermal evaporation or sputtering method, fills nano-pore battle array gap and runs through nanometer
Kong Zhen runs through type super short period superlattices.The metal electrode 6 can combine for titanium/gold, ni au or titanium/platinum/gold, and rhodium/gold or titanium/
Gold combination.Preferably, the interdigital electrode material of metal is titanium/gold (Ti/Au).
A kind of preparation method of the deep ultraviolet MSM photoelectric detector of high external quantum efficiency of the present embodiment is as follows：
1) using gas phase epitaxy of metal organic compound (MOVPE) technology, extension is raw in upward direction on foreign substrate sapphire
It is long.Group III source, high-purity ammon (NH are used as using trimethyl gallium (TMG), trimethyl aluminium (TMA) in growth course3) it is used as group V source,
High-purity hydrogen (H2) it is used as carrier gas；
2) the high temperature epitaxy AlN buffer layer in the foreign substrate of such as step 1), thickness are about 1 μm；
3) the first medium film layer GaN of 300 cycles of alternating growth and on the AlN padded coaming of such as step 2)
Second medium film layer 5, first medium film layer GaN and second medium film layer AlN form potential well and potential barrier, i.e. composition super short period is brilliant
Lattice.By controlling TMG, TMA and NH3Flow and the epitaxial growth time, adjust super short period superlattices first medium film layer GaN
With the thickness of second medium film layer AlN.
4) process that standard is used on the super short period superlattices of such as step 3), combines with nanometer embossing
Inductive coupling plasma dry etch technology, it is 430nm, cell radius 130nm that preparation, which forms the period, and etch depth is
The nano-pore array structure of 400nm.
5) the standards works such as photoetching, plated film, removing are utilized on type super short period superlattices in such as step 4) nano-pore battle array
Metal electrode 6 is made in skill, is metal interdigital electrode, metal electrode 6 is injected into the super short period superlattices AlN/GaN and is received
Among metre hole battle array.
6) in the device of such as step 5) metal interdigital electrode in 400 DEG C of nitrogen atmospheres rapid thermal annealing 300s, make metal
Interdigital electrode and nano-pore battle array are through type super short period superlattices formation Schottky contacts, so that it is a kind of high outer that the present embodiment is made
The deep ultraviolet MSM photoelectric detector of quantum efficiency.
The above is only a specific embodiment of the present invention, but the design concept of the present invention is not limited to this, all to utilize this
Design makes a non-material change to the present invention, and should all belong to behavior that violates the scope of protection of the present invention.
Claims (9)
1. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency, it is characterised in that：Including substrate, slow from the bottom to top
Layer, nano-pore battle array are rushed through type super short period superlattices and metal electrode；
The nano-pore battle array is that first medium film layer and second medium film layer alternating growth form through type super short period superlattices,
And type ultrashort week is run through in the nano-pore battle array by nanometer embossing and sense coupling microfabrication means
The perforative nanohole array of sequence is formed on phase superlattices；
Metal electrode setting runs through on type super short period superlattices in nano-pore battle array, while metal is injected into nanohole array
Gap, the metal electrode and the nano-pore battle array form Schottky contacts through type super short period superlattices.
2. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency as described in claim 1, it is characterised in that：It is described
Substrate is homo-substrate, which is gallium nitride or aluminum-nitride single crystal.
3. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
Stating substrate is foreign substrate, which is sapphire or silicon carbide or quartz or monocrystalline silicon.
4. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
Stating first medium film layer is gallium nitride single crystal or aluminum gallium nitride mixed crystal, and the second medium film layer is that aluminum-nitride single crystal or aluminum gallium nitride are mixed
It is brilliant.
5. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
It is 25nm~130nm that nano-pore battle array, which is stated, through the radius of the minimum unit of type super short period superlattices.
6. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
It is 100nm~500nm that nano-pore battle array, which is stated, through the hole of the type super short period superlattices battle array period.
7. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
It is 200nm~800nm that nano-pore battle array, which is stated, through the depth of the minimum unit of type super short period superlattices.
8. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
Stating metal electrode is to be prepared using high vacuum thermal evaporation or sputtering method, fills the gap of the nano-pore battle array and receives through described
Metre hole battle array runs through type super short period superlattices.
9. a kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency according to claim 1, it is characterised in that：Institute
Stating metal electrode is one of titanium/gold, ni au, titanium/platinum/gold or rhodium/gold titanium/gold combination.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364584A (en) * | 2019-06-28 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect |
| CN110752268A (en) * | 2019-10-28 | 2020-02-04 | 电子科技大学 | Preparation method of MSM photoelectric detector integrated with period light-limiting structure |
| CN112880821A (en) * | 2019-11-29 | 2021-06-01 | 中国科学技术大学 | Solar blind ultraviolet electrochemical photodetector and preparation method thereof |
| CN112945377A (en) * | 2021-02-01 | 2021-06-11 | 河北工业大学 | Deep ultraviolet photoelectric detector based on plasma excimer |
| WO2021249177A1 (en) * | 2020-06-11 | 2021-12-16 | 京东方科技集团股份有限公司 | Photoelectric device, manufacturing method therefor, and photoelectric detector |
| CN114883423A (en) * | 2022-05-20 | 2022-08-09 | 江南大学 | Silicon carbide super-structure surface for high-gain ultraviolet photoelectric detector and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110364584A (en) * | 2019-06-28 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect |
| CN110752268A (en) * | 2019-10-28 | 2020-02-04 | 电子科技大学 | Preparation method of MSM photoelectric detector integrated with period light-limiting structure |
| CN110752268B (en) * | 2019-10-28 | 2021-02-19 | 电子科技大学 | Preparation method of MSM photoelectric detector integrated with periodic light trapping structure |
| CN112880821A (en) * | 2019-11-29 | 2021-06-01 | 中国科学技术大学 | Solar blind ultraviolet electrochemical photodetector and preparation method thereof |
| WO2021249177A1 (en) * | 2020-06-11 | 2021-12-16 | 京东方科技集团股份有限公司 | Photoelectric device, manufacturing method therefor, and photoelectric detector |
| CN112945377A (en) * | 2021-02-01 | 2021-06-11 | 河北工业大学 | Deep ultraviolet photoelectric detector based on plasma excimer |
| CN114883423A (en) * | 2022-05-20 | 2022-08-09 | 江南大学 | Silicon carbide super-structure surface for high-gain ultraviolet photoelectric detector and preparation method thereof |
| CN114883423B (en) * | 2022-05-20 | 2024-03-01 | 江南大学 | Silicon carbide super-structured surface for high-gain ultraviolet photoelectric detector and preparation method thereof |
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