CN110571301A - Gallium oxide based solar blind detector and preparation method thereof - Google Patents
Gallium oxide based solar blind detector and preparation method thereof Download PDFInfo
- Publication number
- CN110571301A CN110571301A CN201910706384.1A CN201910706384A CN110571301A CN 110571301 A CN110571301 A CN 110571301A CN 201910706384 A CN201910706384 A CN 201910706384A CN 110571301 A CN110571301 A CN 110571301A
- Authority
- CN
- China
- Prior art keywords
- gallium oxide
- layer
- silicon
- oxide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 90
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 230000004044 response Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 gallium oxide Metal Oxide Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
the invention provides a solar blind photoelectric detector and a preparation method thereof, wherein the solar blind photoelectric detector comprises: a gallium oxide substrate containing a gallium oxide epitaxial layer; the source electrode and the drain electrode are respectively in Schottky contact with the gallium oxide substrate; a silicon oxide passivation layer formed on the gallium oxide substrate, the source electrode and the drain electrode; opening a trench in the gallium oxide substrate from the silicon oxide passivation layer; the aluminum oxide layer is formed at the bottom of the groove and on the side wall of the groove; a gate, an aluminum oxide layer over the trench and a silicon oxide passivation layer. The invention adopts a specific three-terminal structure, and the carrier concentration of the channel can be adjusted through the grid, thereby conveniently adjusting the dark current of the device.
Description
Technical Field
The invention relates to the technical field of semiconductors, and further relates to a gallium oxide-based solar blind detector and a preparation method of the gallium oxide-based solar blind detector.
Background
The solar blind refers to ultraviolet light with the wavelength range of 200-280nm, the solar blind photoelectric detector has the outstanding advantages of small background interference and the like, and has wide application prospects in the fields of warning, guidance and the like. The forbidden band width of gallium oxide directly corresponds to the solar blind wave band, and is a natural solar blind detection material. The performance of the optical detector is mainly characterized by the following parameters: light responsivity, dark current, specific detectivity, response speed, quantum efficiency, and the like. Due to the limitation of material quality and device structure, the performance of the existing gallium oxide based solar blind detector is poor and is not enough to meet the requirement of practical application. The existing gallium oxide-based solar blind detector usually adopts a two-end structure of a metal-semiconductor-metal (MSM) and a Schottky junction (Schottky diode), but the dark current of the detectors with the two structures is generally larger and cannot be adjusted after the device is prepared. In addition, the metal-semiconductor-metal structure detector cannot achieve high gain and large bandwidth at the same time, and the response speed of the device is slow. The detector with the Schottky structure is usually formed by combining metal with high work function and gallium oxide, the formed Schottky barrier can reduce dark current of the device to a certain extent, and meanwhile, a built-in electric field can accelerate the collection of carriers, so that the light response speed of the device is improved, but the light response of the solar blind detector with the structure is usually low.
therefore, the technical problems to be solved are as follows: the source and drain electrodes form good Schottky contact; implementation of normally-off metal-oxide-semiconductor field effect transistors (MOSFETs); reasonable etching depth of the gate groove and damage repair.
Disclosure of Invention
Technical problem to be solved
(II) technical scheme
According to an aspect of the present invention, there is provided a solar blind photodetector including:
A gallium oxide substrate containing a gallium oxide epitaxial layer;
the source electrode and the drain electrode are respectively in Schottky contact with the gallium oxide substrate;
a silicon oxide passivation layer formed on the gallium oxide substrate, the source electrode and the drain electrode;
A trench opened from the silicon oxide passivation layer into the gallium oxide substrate;
The aluminum oxide layer is formed at the bottom of the groove and on the side wall of the groove;
A gate, an aluminum oxide layer over the trench and a silicon oxide passivation layer.
In a further embodiment, the gallium oxide substrate comprises, from bottom to top: an iron-doped beta gallium oxide semi-insulating substrate, an unintentionally doped gallium oxide buffer layer and a silicon-doped gallium oxide epitaxial layer.
In a further embodiment, the thickness of the gallium oxide buffer layer is unintentionally doped200-1000nm, and the doping concentration of the silicon-doped gallium oxide epitaxial layer is 1016～1018cm-3。
in a further embodiment, the material of the source and drain electrodes is platinum.
In a further embodiment, the trench bottom of the trench opens to a silicon-doped gallium oxide epitaxial layer of the gallium oxide substrate.
according to another aspect of the present invention, there is also provided a method for manufacturing a solar-blind photodetector, including:
preparing a gallium oxide substrate containing a gallium oxide epitaxial layer;
Photoetching and patterning, and performing device isolation on the gallium oxide substrate by adopting reactive ion beam etching;
depositing a source electrode and a drain electrode, and forming Schottky contact with gallium oxide;
growing a whole layer of silicon oxide passivation layer on the surface;
Etching the silicon oxide passivation layer and the gallium oxide with a set thickness by adopting reactive ion beam etching to form a groove structure, thereby realizing a normally-off gallium oxide MOSFET;
depositing an aluminum oxide dielectric layer by adopting an atomic layer deposition method;
a gate is formed over the aluminum oxide layer of the trench and over the silicon oxide passivation layer.
in a further embodiment, the metal used for depositing the source electrode and the drain electrode is a platinum/titanium/gold three-layer structure, wherein the thickness of platinum is 10-60nm, the thickness of titanium is 5-20nm, and the thickness of gold is 10-100 nm.
in a further embodiment, the method of making further comprises:
and repairing damage caused by etching by annealing, and reducing the interface state density to prepare the gallium oxide substrate containing the gallium oxide epitaxial layer.
in a further embodiment, the gallium oxide substrate comprises, from bottom to top: an iron-doped beta gallium oxide semi-insulating substrate, an unintentionally doped gallium oxide buffer layer and a silicon-doped gallium oxide epitaxial layer.
In a further embodiment, the thickness of the gallium oxide buffer layer is unintentionally doped200-1000nm, and the doping concentration of the silicon-doped gallium oxide epitaxial layer is 1016～1018cm-3。
(III) advantageous effects
the gallium oxide epitaxial film grown by molecular beam epitaxy has high film quality, and the doping concentration of the epitaxial layer is 101w～1018cm-3And the buffer layer is favorable for preventing iron in the substrate from diffusing into the epitaxial layer, so that the stability of the device is improved.
The invention adopts a three-terminal structure, and the carrier concentration of a channel can be adjusted through the grid, so that the dark current of a device can be conveniently adjusted;
According to the invention, platinum is adopted as a source electrode and a drain electrode of the device, and Schottky contact is formed between the platinum and gallium oxide, and the existence of a Schottky barrier is favorable for further reducing the dark current of the device;
According to the invention, platinum is used as a source electrode and a drain electrode of the device and forms Schottky contact with gallium oxide, so that a depletion region with a certain width exists at the contact position of metal and gallium oxide, and the existence of a built-in electric field in the depletion region is favorable for collecting carriers, thereby improving the response speed of the device; meanwhile, due to the adoption of rapid thermal annealing, interface damage caused by etching is repaired, and the mobility of carriers in a channel is improved, so that the response speed of the device is improved;
Because the MOSFET structure has high-gain amplification characteristic and high-quality epitaxial thin film, the device has ultrahigh light responsivity and specific detectivity;
and (4) a wide working interval. According to the invention, the reactive ion beam etching is adopted to etch the gallium oxide to a certain depth to form a groove structure, so that a normally-off gallium oxide Metal Oxide Semiconductor Field Effect Transistor (MOSFET) can be formed, and the effective working interval of the device can be increased.
drawings
Fig. 1-7 are flow charts of methods for fabricating gallium oxide-based solar blind detectors according to embodiments of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
it should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, while exemplifications of parameters including particular values may be provided herein, it is to be understood that the parameters need not be exactly equal to the respective values, but may be approximated to the respective values within acceptable error margins or design constraints. Directional phrases used in the embodiments, such as "upper," "lower," "front," "rear," "left," "right," and the like, refer only to the orientation of the figure. Accordingly, the directional terminology used is intended to be in the nature of words of description rather than of limitation.
The existing gallium oxide-based solar blind detector is mainly based on two-end structures of a metal-semiconductor-metal (MSM) and a Schottky junction (Schottky diode), but the dark current of the detectors with the two structures is generally larger and cannot be adjusted after the device is prepared. In addition, the metal-semiconductor-metal structure detector cannot achieve high gain and large bandwidth at the same time, and the response speed of the device is slow. Whereas the optical responsivity of a detector of schottky structure is generally low. Therefore, the embodiment of the invention provides a novel gallium oxide-based solar blind detector with a three-terminal structure, which can realize extremely low dark current and controllable dark current, and meanwhile, the device has extremely high light responsivity and response speed. The basic scheme of the invention is to prepare a metal-oxide-semiconductor field effect transistor (MOSFET) with a source electrode and a drain electrode having Schottky junction characteristics.
In this application, a solar blind detector refers to a device capable of receiving and detecting ultraviolet radiation, and the wavelength of the detected ultraviolet light is less than 280 nm.
The following process steps are described for gallium oxide (Ga) as shown in FIG. 12O3) On the sample. Here, the gallium oxide sample may include multiple epitaxial layers, for example from bottom to top: an iron-doped beta gallium oxide semi-insulating substrate 101, an unintentionally doped gallium oxide buffer layer 102 and a silicon-doped gallium oxide epitaxial layer 103. Wherein the iron is doped with a gallium oxide moietyThe preparation process of the insulating substrate 101 is to adopt a beta gallium oxide single crystal grown by pulling and growing, the unintended doped gallium oxide buffer layer 102 is grown by adopting an HVPE (hydride vapor phase epitaxy) method, the growth thickness can be 1 μm, the buffer layer is grown on a (010) surface of an iron-doped beta gallium oxide semi-insulating substrate, the silicon-doped gallium oxide epitaxial layer 103 is deposited by adopting an MBE (molecular beam epitaxy) method, and the deposition thickness can be 200 nm.
The layer may be prepared by various other deposition or growth methods, including but not limited to methods such as MOCVD or PLD, to produce epitaxial films of gallium oxide.
Referring to fig. 2, the sample is patterned by photolithography, and the sample is isolated by reactive ion beam etching; the parameters of the etching can be: by Cl2Etching with Ar gas, wherein Cl2The flow rate was 15sccm, the flow rate of Ar was 5sccm, the ICP (inductively coupled plasma) power was 400W, and the RF power was 200W.
referring to FIG. 3, the source and drain electrodes were electron beam evaporation deposited using standard photolithographic lift-off processes using platinum/titanium/gold, and gallium oxide (Ga)2O3) Forming Schottky contact, wherein the thickness of the electrode is 40nm/10nm/50nm respectively; platinum thickness range: 10-60nm, titanium thickness range: 5-20nm, gold thickness range: 10-100 nm. The platinum is used as an electrode, so that the dark current of the device is reduced, and the response speed of the device is improved. It should be noted that the metal here can also be other metals used for schottky contact, including but not limited to nickel and gold.
referring to FIG. 4, a whole layer of silicon dioxide (SiO) with a thickness of 100nm is grown on the surface of the device by PECVD2) A passivation layer 120;
referring to FIG. 5, reactive ion beam etching was used to etch Si02Etching the layer 120 and gallium oxide with a certain thickness (120nm) to form a trench structure, thereby realizing a normally-off gallium oxide MOSFET;
Referring to fig. 6, an alumina dielectric layer 130 having a thickness of 30nm is deposited by atomic layer deposition. Then adopting rapid thermal annealing to repair the damage caused by etching and reducing the density of interface state, wherein the annealing condition is 450-500℃，N2the treatment was carried out for 1 minute under a (nitrogen) atmosphere.
referring to FIG. 7, the gate metal titanium/gold was deposited by electron beam evaporation to a thickness of 20nm/80nm, respectively. Therefore, the special three-terminal device structure can adjust the carrier concentration of a channel through the grid electrode, so that the dark current of the device can be conveniently adjusted.
it is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the definitions of the various elements are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art can easily modify or replace them:
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present invention. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
the above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. a solar-blind photodetector, characterized by comprising:
A gallium oxide substrate containing a gallium oxide epitaxial layer;
The source electrode and the drain electrode are respectively in Schottky contact with the gallium oxide substrate;
A silicon oxide passivation layer formed on the gallium oxide substrate, the source electrode and the drain electrode;
A trench opened from the silicon oxide passivation layer into the gallium oxide substrate;
the aluminum oxide layer is formed at the bottom of the groove and on the side wall of the groove;
A gate, an aluminum oxide layer over the trench and a silicon oxide passivation layer.
2. the solar-blind photodetector of claim 1, wherein the gallium oxide substrate comprises, from bottom to top: an iron-doped beta gallium oxide semi-insulating substrate, an unintentionally doped gallium oxide buffer layer and a silicon-doped gallium oxide epitaxial layer.
3. The solar-blind photodetector according to claim 2, characterized in that the thickness of said buffer layer of unintentionally doped gallium oxide is 200-1000nm and the doping concentration of said epitaxial layer of silicon-doped gallium oxide is 1016～1018cm-3。
4. The solar blind photodetector of claim 1, wherein the material of the source and drain electrodes is platinum.
5. The solar-blind photodetector of claim 2, wherein the bottom of the trench opens to the silicon-doped gallium oxide epitaxial layer of the gallium oxide substrate.
6. A method for manufacturing a solar blind photodetector is characterized by comprising the following steps:
preparing a gallium oxide substrate containing a gallium oxide epitaxial layer;
Photoetching and patterning, and performing device isolation on the gallium oxide substrate by adopting reactive ion beam etching;
Depositing a source electrode and a drain electrode, and forming Schottky contact with gallium oxide;
Growing a whole layer of silicon oxide passivation layer on the surface;
Etching the silicon oxide passivation layer and the gallium oxide with a set thickness by adopting reactive ion beam etching to form a groove structure, thereby realizing a normally-off gallium oxide MOSFET;
Depositing an aluminum oxide dielectric layer by adopting an atomic layer deposition method;
A gate is formed over the aluminum oxide layer of the trench and over the silicon oxide passivation layer.
7. The method according to claim 6, wherein the source electrode and the drain electrode are deposited by a platinum/titanium/gold three-layer structure, wherein the thickness of platinum is 10-60nm, the thickness of titanium is 5-20nm, and the thickness of gold is 10-100 nm.
8. The method of claim 6, further comprising:
And repairing damage caused by etching by annealing, and reducing the interface state density to prepare the gallium oxide substrate containing the gallium oxide epitaxial layer.
9. The method according to claim 6, wherein the gallium oxide substrate comprises, from bottom to top: an iron-doped beta gallium oxide semi-insulating substrate, an unintentionally doped gallium oxide buffer layer and a silicon-doped gallium oxide epitaxial layer.
10. the method according to claim 9, wherein the thickness of the unintentionally doped gallium oxide buffer layer is 200-1000nm, and the doping concentration of the silicon-doped gallium oxide epitaxial layer is 1016～1018cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910706384.1A CN110571301B (en) | 2019-07-31 | 2019-07-31 | Gallium oxide based solar blind detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910706384.1A CN110571301B (en) | 2019-07-31 | 2019-07-31 | Gallium oxide based solar blind detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110571301A true CN110571301A (en) | 2019-12-13 |
| CN110571301B CN110571301B (en) | 2021-07-09 |
Family
ID=68774258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910706384.1A Active CN110571301B (en) | 2019-07-31 | 2019-07-31 | Gallium oxide based solar blind detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110571301B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299789A (en) * | 2021-05-18 | 2021-08-24 | 中国科学院宁波材料技术与工程研究所 | Solar blind ultraviolet photoelectric detector and application thereof |
| CN113555460A (en) * | 2021-07-06 | 2021-10-26 | 浙江芯国半导体有限公司 | Gallium oxide Schottky junction ultraviolet detector and preparation method thereof |
| CN113659029A (en) * | 2021-07-08 | 2021-11-16 | 中国科学院宁波材料技术与工程研究所 | Gallium oxide solar blind ultraviolet detector |
| CN113707760A (en) * | 2021-07-20 | 2021-11-26 | 青岛滨海学院 | Based on beta-Ga2O3Three-port ultraviolet light detector of/MgO heterojunction and manufacturing method thereof |
| CN113921589A (en) * | 2021-09-02 | 2022-01-11 | 西安电子科技大学 | Gallium oxide-based sunlight blind area detector based on zero-grid bias |
| CN115036386A (en) * | 2022-06-01 | 2022-09-09 | 合肥仙湖半导体科技有限公司 | Based on Ga 2 O 3 /Cu x Self-driven deep ultraviolet photoelectric detector of O heterojunction and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876515A (en) * | 2017-03-06 | 2017-06-20 | 中国科学院宁波材料技术与工程研究所 | Visible blind photodetector of thin-film transistor structure and preparation method thereof |
| CN109728010A (en) * | 2017-10-31 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Integrated chip and forming method thereof |
| CN109742180A (en) * | 2018-12-28 | 2019-05-10 | 中国科学院宁波材料技术与工程研究所 | A kind of deep ultraviolet light electric explorer based on amorphous oxide gallium based thin film transistors |
-
2019
- 2019-07-31 CN CN201910706384.1A patent/CN110571301B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876515A (en) * | 2017-03-06 | 2017-06-20 | 中国科学院宁波材料技术与工程研究所 | Visible blind photodetector of thin-film transistor structure and preparation method thereof |
| CN109728010A (en) * | 2017-10-31 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Integrated chip and forming method thereof |
| CN109742180A (en) * | 2018-12-28 | 2019-05-10 | 中国科学院宁波材料技术与工程研究所 | A kind of deep ultraviolet light electric explorer based on amorphous oxide gallium based thin film transistors |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299789A (en) * | 2021-05-18 | 2021-08-24 | 中国科学院宁波材料技术与工程研究所 | Solar blind ultraviolet photoelectric detector and application thereof |
| CN113555460A (en) * | 2021-07-06 | 2021-10-26 | 浙江芯国半导体有限公司 | Gallium oxide Schottky junction ultraviolet detector and preparation method thereof |
| CN113555460B (en) * | 2021-07-06 | 2023-06-20 | 浙江芯科半导体有限公司 | Gallium oxide Schottky junction ultraviolet detector and preparation method thereof |
| CN113659029A (en) * | 2021-07-08 | 2021-11-16 | 中国科学院宁波材料技术与工程研究所 | Gallium oxide solar blind ultraviolet detector |
| CN113707760A (en) * | 2021-07-20 | 2021-11-26 | 青岛滨海学院 | Based on beta-Ga2O3Three-port ultraviolet light detector of/MgO heterojunction and manufacturing method thereof |
| CN113921589A (en) * | 2021-09-02 | 2022-01-11 | 西安电子科技大学 | Gallium oxide-based sunlight blind area detector based on zero-grid bias |
| CN115036386A (en) * | 2022-06-01 | 2022-09-09 | 合肥仙湖半导体科技有限公司 | Based on Ga 2 O 3 /Cu x Self-driven deep ultraviolet photoelectric detector of O heterojunction and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110571301B (en) | 2021-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110571301B (en) | Gallium oxide based solar blind detector and preparation method thereof | |
| Wang et al. | ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection | |
| JP4164563B2 (en) | Oxide semiconductor PN junction device and manufacturing method thereof | |
| CN102214705B (en) | AlGan polarized ultraviolet photoelectric detector and manufacturing method thereof | |
| CN106409968B (en) | AlGaN base superlattices avalanche-type ultraviolet detectors and preparation method thereof | |
| CN110660882B (en) | Grid-controlled PIN structure GaN ultraviolet detector and preparation method thereof | |
| CN111952385B (en) | Infrared light detector combining two-dimensional material polarization excimer and heterojunction | |
| CN111739960B (en) | Gain type heterojunction ultraviolet photoelectric detector | |
| CN103258869A (en) | Ultraviolet and infrared double-color detector based on zinc oxide materials and manufacturing method thereof | |
| CN114220878A (en) | Ga with carrier transport layer2O3GaN solar blind ultraviolet detector and preparation method thereof | |
| JP2007311475A (en) | Semiconductor photodetector | |
| CN109698250B (en) | Grid-regulated AlGaN-based metal-semiconductor-metal ultraviolet detector and preparation method thereof | |
| CN114267747B (en) | Ga with metal gate structure 2 O 3 AlGaN/GaN solar blind ultraviolet detector and preparation method thereof | |
| CN108321256A (en) | A kind of preparation method based on p-type transparent grid electrode GaN base ultraviolet detector | |
| CN105161551A (en) | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector | |
| CN109326659A (en) | A kind of 4H-SiC ultraviolet detector of high-responsivity low-dark current PIN structural and preparation method thereof | |
| KR20140086617A (en) | Light detecting device | |
| WO2019210647A1 (en) | Method for preparing avalanche photodiode | |
| CN208422941U (en) | One kind being based on p-type transparent grid electrode GaN base ultraviolet detector | |
| CN109494277B (en) | Long-wave infrared detector and manufacturing method thereof | |
| CN113745333A (en) | Normally-off gallium oxide based MIS-HEMT device containing delta doped barrier layer and preparation method thereof | |
| CN107863360B (en) | Double-channel HEMT terahertz detector | |
| CN112018210B (en) | Polarization-enhanced narrow-band AlGaNp-i-n type ultraviolet detector and preparation method thereof | |
| CN219842993U (en) | Long-wave nBn type InAsSb infrared detector material and infrared detector | |
| CN111244222B (en) | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |