CN113555460B - Gallium oxide Schottky junction ultraviolet detector and preparation method thereof - Google Patents
Gallium oxide Schottky junction ultraviolet detector and preparation method thereof Download PDFInfo
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 134
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 161
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 160
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000002105 nanoparticle Substances 0.000 claims abstract description 59
- 239000002131 composite material Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000002344 surface layer Substances 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000002161 passivation Methods 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000002082 metal nanoparticle Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000002784 hot electron Substances 0.000 abstract description 4
- 239000007800 oxidant agent Substances 0.000 abstract description 4
- 230000027756 respiratory electron transport chain Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000005437 stratosphere Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention relates to a gallium oxide Schottky junction ultraviolet detector and a preparation method thereof, wherein the detector comprises: the gallium oxide-gallium nanoparticle composite active layer is positioned on the gallium oxide substrate, the Schottky contact electrodes are distributed in the surface layer of the gallium oxide-gallium nanoparticle composite active layer at intervals, the metal conductive electrodes are distributed on the surface of the gallium oxide-gallium nanoparticle composite active layer at intervals, and the ohmic contact electrodes are positioned below the gallium oxide substrate. Under the irradiation of ultraviolet light, the gallium nanoparticles generate plasmon resonance effect, so that the surface electric field of the gallium nanoparticles is enhanced, the scattering cross section of the gallium nanoparticles is increased, energy and hot electron transfer between the gallium nanoparticles and oxidant materials occurs, the detection capability of the gallium oxide-based detector on solar blind light is greatly enhanced, and the response sensitivity of the detector is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a gallium oxide Schottky junction ultraviolet detector and a preparation method thereof.
Background
Sunlight is the most dominant ultraviolet source in nature, and light in the UVC band in a range of wavelengths is strongly absorbed by ozone in the stratosphere when passing through the atmosphere, and thus is almost absent from the near-earth atmosphere, a region called the solar blind band (240-280 nm). Because the interference of natural light background radiation is almost not generated in the solar blind wave band, the wave band is widely used as a response wave band of the ultraviolet detector, and the false alarm rate is extremely low. The ultraviolet detection technology is a photoelectric detection technology developed after the infrared and laser detection technology, and the technical key is to develop the ultraviolet detector with high sensitivity and low noise.
With the width of the third generationIn-depth research on forbidden band semiconductors, silicon carbide (SiC) is taken as a typical representative of wide forbidden band semiconductor materials, and has high material maturity, large forbidden band width (3.26 eV), high breakdown electric field (3.0 MV/cm) and large saturated electron drift velocity (2.0x10) 7 cm/s) and high thermal conductivity, and the like, and is the preferred material for preparing the ultraviolet detector. The wide-bandgap semiconductor ultraviolet detector represented by silicon carbide is unresponsive to visible light and has natural visible light blind property.
However, although silicon carbide-based uv detectors do not respond to visible and infrared light, which can greatly reduce background noise, the response to the uv band is not selective, i.e., does not have a "solar blind" characteristic, resulting in lower sensitivity of the uv detector, which greatly limits the application of SiC uv detectors in many important fields.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a gallium oxide Schottky junction ultraviolet detector and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
the embodiment of the invention provides a gallium oxide Schottky junction ultraviolet detector, which comprises the following components: the gallium oxide substrate, the gallium oxide-gallium nanoparticle composite active layer, a plurality of Schottky contact electrodes, ohmic contact electrodes and a plurality of metal conductive electrodes, wherein,
the gallium oxide-gallium nanoparticle composite active layer is positioned on the gallium oxide substrate, a plurality of Schottky contact electrodes are distributed in the surface layer of the gallium oxide-gallium nanoparticle composite active layer at intervals, a plurality of metal conductive electrodes are distributed on the surface of the gallium oxide-gallium nanoparticle composite active layer at intervals, and the ohmic contact electrodes are positioned below the gallium oxide substrate.
In one embodiment of the invention, the thickness of the gallium oxide substrate is 0.05-1 mm, and the material is n+Ga 2 O 3 The doping concentration is 1 multiplied by 10 18 ～1×10 20 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the gallium oxide-gallium nanoparticle composite active layer is 0.1-0.4 mu m.
In one embodiment of the present invention, the gallium oxide-gallium nanoparticle composite active layer includes a plurality of gallium oxide epitaxial layers and a plurality of gallium metal layers, wherein a plurality of gallium oxide epitaxial layers and a plurality of gallium metal layers are sequentially and alternately stacked, and the gallium metal layers are located between two adjacent gallium oxide epitaxial layers.
In one embodiment of the present invention, the number of gallium oxide epitaxial layers is 2, the number of gallium metal layers is 1, and the gallium metal layers are located between two gallium oxide epitaxial layers.
In one embodiment of the invention, the gallium metal layer comprises at least one layer of gallium metal nanoparticles.
In one embodiment of the invention, the gallium metal nanoparticles have a diameter of 5 to 50nm.
In one embodiment of the invention, the gallium oxide epitaxial layer has a doping concentration of less than 1×10 15 cm -3 。
In one embodiment of the present invention, the schottky contact electrode further comprises a passivation layer, wherein the passivation layer is located between the metal conductive electrode and the gallium oxide-gallium nanoparticle composite active layer and is located between two adjacent schottky contact electrodes.
Another embodiment of the present invention provides a method for manufacturing a gallium oxide schottky junction ultraviolet detector, including the steps of:
s1, epitaxially growing a gallium oxide-gallium nanoparticle composite active layer on a gallium oxide substrate;
s2, depositing a passivation layer on the gallium oxide-gallium nanoparticle composite active layer;
s3, removing the passivation layers of the Schottky contact electrode areas, carrying out in-situ oxidation on the device, and forming oxide films on the gallium oxide substrate and the surfaces of the Schottky contact electrode areas;
s4, removing the oxide film on the lower surface of the gallium oxide substrate, and preparing an ohmic contact electrode on the lower surface of the gallium oxide substrate;
s5, removing the oxide films on the surfaces of the Schottky contact electrode areas, depositing Schottky contact metal in the Schottky contact electrode areas, and forming a plurality of Schottky contact electrodes in the surface layer of the gallium oxide-gallium nanoparticle composite active layer;
and S6, depositing metal conductive electrodes on the surface of the gallium oxide-gallium nanoparticle composite active layer, so that the metal conductive electrodes are distributed at intervals.
In one embodiment of the present invention, step S1 includes the steps of:
s11, epitaxially growing a gallium oxide epitaxial layer on the gallium oxide substrate;
s12, depositing a gallium metal layer on the gallium oxide epitaxial layer;
s13, repeating the step S11 and the step S12, so that the gallium metal layer is positioned between two adjacent gallium oxide epitaxial layers;
and S14, annealing the device to form the gallium oxide-gallium nanoparticle composite active layer.
Compared with the prior art, the invention has the beneficial effects that:
according to the gallium oxide Schottky junction ultraviolet detector, under the irradiation of ultraviolet light, the gallium nanoparticles generate plasmon resonance effect, so that the surface electric field of the gallium nanoparticles is enhanced, the scattering cross section is increased, energy and hot electron transfer between the gallium oxide Schottky junction ultraviolet detector and an oxidant material occurs, the detection capability of the gallium oxide Schottky detector on solar blind light can be greatly enhanced, and the response sensitivity of the detector is improved.
Drawings
Fig. 1 is a schematic structural diagram of a gallium oxide schottky junction ultraviolet detector according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another gallium oxide schottky junction ultraviolet detector according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a method for manufacturing a gallium oxide schottky junction ultraviolet detector according to an embodiment of the present invention;
fig. 4 a-fig. 4i are schematic process diagrams of a method for manufacturing a gallium oxide schottky junction ultraviolet detector according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, fig. 1 is a schematic structural diagram of a gallium oxide schottky junction ultraviolet detector according to an embodiment of the present invention. The gallium oxide Schottky junction ultraviolet detector comprises a gallium oxide substrate 1, a gallium oxide-gallium nanoparticle composite active layer 2, a plurality of Schottky contact electrodes 3, ohmic contact electrodes 4 and a plurality of metal conductive electrodes 5.
The gallium oxide-gallium nanoparticle composite active layer 2 is located on the gallium oxide substrate 1, a plurality of Schottky contact electrodes 3 are distributed in the surface layer of the gallium oxide-gallium nanoparticle composite active layer 2 at intervals, a plurality of metal conductive electrodes 5 are distributed on the surface of the gallium oxide-gallium nanoparticle composite active layer 2 at intervals, and an ohmic contact electrode 4 is located under the gallium oxide substrate 1. Further, the plurality of metal conductive electrodes 5 may cover edge positions of two adjacent schottky electrodes 3, contact with the schottky electrodes 3, or may be located between two adjacent schottky electrodes 3, and not contact with the schottky electrodes 3.
In one embodiment, the gallium oxide substrate 1 has a thickness of 0.05-1 mm and a material of n+Ga 2 O 3 The doping concentration is 1 multiplied by 10 18 ～1×10 20 cm -3 。
In a specific embodiment, the gallium oxide-gallium nanoparticle composite active layer 2 includes a plurality of gallium oxide epitaxial layers 21 and a plurality of gallium metal layers 22, wherein the plurality of gallium oxide epitaxial layers 21 and the plurality of gallium metal layers 22 are sequentially and alternately stacked, and the gallium metal layers 22 are located between two adjacent gallium oxide epitaxial layers 21.
It will be appreciated that the gallium metal layer 22 is located between two adjacent gallium oxide epitaxial layers 21, the gallium metal layer 22 is not in contact with the gallium oxide substrate 1 and the schottky contact electrode 3, the gallium oxide epitaxial layer 21 below the gallium metal layer 22 is in contact with the gallium oxide substrate 1, and the gallium oxide epitaxial layer 21 above the gallium metal layer 22 is in contact with the schottky contact electrode 3.
Further, the thicknesses of the gallium oxide epitaxial layers 21 on both sides of the gallium metal layer 22 may be equal or unequal, and thus, the thicknesses of the multiple gallium oxide epitaxial layers 21 may be equal or unequal.
In this embodiment, the number of gallium oxide epitaxial layers 21 is 2, the number of gallium metal layers 22 is 1, the gallium metal layers 22 are located between two gallium oxide epitaxial layers 21, and the two gallium oxide epitaxial layers 21 above and below the gallium metal layers 22 are respectively in contact with the gallium oxide substrate 1 and the schottky contact electrode 3, so that the gallium metal layers 22 are not in contact with the gallium oxide substrate 1 and the schottky contact electrode 3. Further, the thicknesses of the gallium oxide epitaxial layers 21 on both sides of the gallium metal layer 22 may be equal or unequal, that is, the gallium metal layer 22 may be located in the middle of the gallium oxide-gallium nanoparticle composite active layer 2, may be located at a position above the gallium oxide-gallium nanoparticle composite active layer 2, or may be located at a position below the gallium oxide-gallium nanoparticle composite active layer 2.
In one embodiment, gallium metal layer 22 includes at least one layer of gallium metal nanoparticles, i.e., each gallium metal layer 22 may be formed from one layer of gallium metal nanoparticles or may be formed from a stack of multiple layers of gallium metal nanoparticles. Specifically, the diameter of each gallium metal nanoparticle is 5-50 nm.
Specifically, the gallium oxide epitaxial layer 21 has a doping concentration of less than 1×10 15 cm -3 . The thickness of the gallium oxide-gallium nanoparticle composite active layer 2 is 0.05-1 mm, namely the total thickness of a plurality of gallium oxide epitaxial layers 21 and a plurality of gallium metal layers 22 which are alternately laminated in sequence is 0.05-1 mm.
Referring to fig. 2, fig. 2 is a schematic structural diagram of another gallium oxide schottky junction ultraviolet detector according to an embodiment of the present invention. The gallium oxide Schottky junction ultraviolet detector comprises a gallium oxide substrate 1, a gallium oxide-gallium nanoparticle composite active layer 2, a plurality of Schottky contact electrodes 3, ohmic contact electrodes 4, a plurality of metal conductive electrodes 5 and a passivation layer 6.
The positions of the gallium oxide substrate 1, the gallium oxide-gallium nanoparticle composite active layer 2, the plurality of schottky contact electrodes 3, the ohmic contact electrode 4, and the plurality of metal conductive electrodes 5 are referred to the above description, and will not be repeated here.
The passivation layer 6 is located between the metal conductive electrode 5 and the gallium oxide-gallium nanoparticle composite active layer 2, that is, the passivation layer 6 is distributed on the surface of the gallium oxide-gallium nanoparticle composite active layer 2 at intervals and located between two adjacent schottky contact electrodes 3, and the metal conductive electrode 5 is located on the passivation layer 6, at this time, the passivation layer 6 is not in contact with the schottky electrodes 3.
The substrate 1 and the epitaxial layer 21 in this embodiment are made of gallium oxide, which is a conductive oxide material and has the characteristics of large forbidden bandwidth, high breakdown voltage and small on-resistance, and is a transparent conductive oxide semiconductor, the transparent range of which extends from the visible light band to the ultraviolet region, and the radiation transmittance of each band is high; the ultraviolet photoelectric detector with excellent performance can be manufactured by utilizing the unique optical characteristics of gallium oxide, and the photoelectric detector prepared on the gallium oxide substrate in the embodiment has better device performance than a silicon carbide substrate, and has lower dark current, reduced response time, improved responsivity and improved detection rate.
According to the gallium oxide Schottky junction ultraviolet detector, under the irradiation of ultraviolet light, the gallium nanoparticles generate plasmon resonance effect, so that the surface electric field of the gallium nanoparticles is enhanced, the scattering cross section is increased, energy and hot electron transfer occurs between the gallium oxide Schottky junction ultraviolet detector and an oxidant material, the detection capability of the gallium oxide Schottky detector on solar blind light can be greatly enhanced, and the response sensitivity of the detector is improved.
In the embodiment, the gallium oxide substrate material is gallium oxide single crystal, and the gallium oxide single crystal is used as the substrate to epitaxial the gallium oxide film, so that the problem of lattice mismatch can be effectively avoided, and the homoepitaxial film with better crystallization quality is obtained.
Example two
On the basis of the first embodiment, please refer to fig. 3 and fig. 4 a-4 i, fig. 3 is a schematic flow chart of a method for manufacturing a gallium oxide schottky junction ultraviolet detector according to an embodiment of the invention, and fig. 4 a-4 i are schematic process diagrams of a method for manufacturing a gallium oxide schottky junction ultraviolet detector according to an embodiment of the invention. The preparation method of the gallium oxide Schottky junction ultraviolet detector comprises the following steps:
s1, epitaxially growing a gallium oxide-gallium nanoparticle composite active layer 2 on a gallium oxide substrate 1. The method specifically comprises the following steps:
s11, epitaxially grow a gallium oxide epitaxial layer 21 on the gallium oxide substrate 1, see fig. 4a.
Specifically, a gallium oxide thin film is epitaxially grown on the upper surface of the gallium oxide substrate 1 by chemical vapor deposition to form a gallium oxide epitaxial layer 21.
S12, a gallium metal layer 22 is deposited on the gallium oxide epitaxial layer 21, please refer to fig. 4b.
Specifically, the sample is moved into a chamber containing a metal Ga source, and Ga metal is deposited on the gallium oxide epitaxial layer 21 to form a gallium metal layer 22.
And S13, repeating the step S11 and the step S12, so that the gallium metal layer 22 is positioned between two adjacent gallium oxide epitaxial layers 21.
Specifically, the gallium oxide epitaxial layer 21 and the gallium metal layer 22 are repeatedly grown on the surface of the gallium metal layer 22 deposited in step S12 a plurality of times, and the gallium metal layer 22 is not deposited after the deposition of the last gallium oxide epitaxial layer 21, so that the gallium metal layer 22 is located between the adjacent two gallium oxide epitaxial layers 21, as shown in fig. 4 c.
Specifically, when the number of gallium oxide epitaxial layers 21 is 2 and the number of gallium metal layers 22 is 1, the gallium oxide epitaxial layers 21 are epitaxially grown on the upper surface of the gallium oxide substrate 1 by chemical vapor deposition, then the gallium metal layers 22 are grown on the gallium oxide epitaxial layers 21, and finally a gallium oxide epitaxial layer 21 is deposited on the gallium metal layers 22, see fig. 4d.
And S14, annealing the device to form the gallium oxide-gallium nanoparticle composite active layer 2.
Specifically, the sample is transferred into an annealing furnace and annealed for 10 to 150 minutes at the temperature of 400 to 1250 ℃ to form the gallium oxide-gallium nanoparticle composite active layer 2.
In this embodiment, annealing is performed on the device on which the gallium oxide epitaxial layer and the gallium metal layer are formed, so that interface defects can be eliminated, and interface quality can be improved.
S2, a passivation layer 6 is deposited on the gallium oxide-gallium nanoparticle composite active layer 2, see fig. 4e.
Specifically, a passivation layer material is deposited on the gallium oxide-gallium nanoparticle composite active layer 2, and then nitrogen gas at 1100 ℃ is introduced for heat treatment for 30 minutes, so that a passivation layer 6 is formed.
S3, removing the passivation layers 6 of the Schottky contact electrode areas, oxidizing the device in situ, and forming oxide films 11 on the surfaces of the gallium oxide substrate 1 and the Schottky contact electrode areas, as shown in FIG. 4f.
Specifically, firstly, a schottky contact electrode area is determined on the surface of the gallium oxide-gallium nanoparticle composite active layer 2, and then a passivation layer 6 of the schottky contact electrode area is etched away by a wet method; next, the device is oxidized in situ, and a compact oxide film 11 is formed on the schottky contact electrode area and the surface of the gallium oxide substrate 1. Specifically, the oxide film 11 may be a gallium oxide thin film.
S4, removing the oxide film 11 on the lower surface of the gallium oxide substrate 1, and preparing an ohmic contact electrode 4 on the lower surface of the gallium oxide substrate 1, see FIG. 4g.
Specifically, the oxide film 11 on the lower surface of the gallium oxide substrate 1 is removed by wet etching, metal Ti and Au are sequentially deposited on the lower surface of the gallium oxide substrate 1, and then annealing treatment is performed in nitrogen at 470 ℃ to form the ohmic contact electrode 4.
S5, removing the oxide films 11 on the surfaces of the Schottky contact electrode areas, depositing Schottky contact metal on the Schottky contact electrode areas, and forming the Schottky contact electrodes 3 in the surface layer of the gallium oxide-gallium nanoparticle composite active layer 2, see fig. 4h.
Specifically, the oxide film 11 in the schottky contact electrode area is removed by wet etching, metal Pt and Au are sequentially deposited in the schottky contact electrode area, then annealing treatment is carried out under nitrogen at 350 ℃ to form a plurality of schottky contact electrodes 3, and the plurality of schottky contact electrodes 3 are distributed in the surface layer of the gallium oxide-gallium nanoparticle composite active layer 2 at intervals.
S6, depositing metal conductive electrodes 5 on the surface of the gallium oxide-gallium nanoparticle composite active layer 2, so that the metal conductive electrodes 5 are distributed at intervals, see FIG. 4i.
Specifically, a metal conductive electrode 5 is deposited between the Schottky contact electrodes 3, and then secondary low-temperature annealing is carried out, wherein the annealing temperature is 55 ℃, so that the damage of the device is repaired, and the preparation of the gallium oxide Schottky junction ultraviolet detector is completed.
The specific structure of the prepared gallium oxide schottky junction ultraviolet detector is shown in embodiment one, and the description of this embodiment is omitted.
According to the gallium oxide Schottky junction ultraviolet detector, under the irradiation of ultraviolet light, the gallium nanoparticles generate plasmon resonance effect, so that the surface electric field of the gallium nanoparticles is enhanced, the scattering cross section is increased, energy and hot electron transfer occurs between the gallium oxide Schottky junction ultraviolet detector and an oxidant material, the detection capability of the gallium oxide Schottky detector on solar blind light can be greatly enhanced, and the response sensitivity of the detector is improved.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (9)
1. A gallium oxide schottky junction ultraviolet detector comprising: a gallium oxide substrate (1), a gallium oxide-gallium nanoparticle composite active layer (2), a plurality of Schottky contact electrodes (3), ohmic contact electrodes (4) and a plurality of metal conductive electrodes (5), wherein,
the gallium oxide-gallium nanoparticle composite active layer (2) is positioned on the gallium oxide substrate (1), a plurality of Schottky contact electrodes (3) are distributed in the surface layer of the gallium oxide-gallium nanoparticle composite active layer (2) at intervals, a plurality of metal conductive electrodes (5) are distributed on the surface of the gallium oxide-gallium nanoparticle composite active layer (2) at intervals, and the ohmic contact electrodes (4) are positioned under the gallium oxide substrate (1);
the preparation method of the gallium oxide Schottky junction ultraviolet detector comprises the following steps of:
s1, epitaxially growing a gallium oxide-gallium nanoparticle composite active layer (2) on a gallium oxide substrate (1);
s2, depositing a passivation layer (6) on the gallium oxide-gallium nanoparticle composite active layer (2);
s3, removing the passivation layers (6) of the Schottky contact electrode areas, oxidizing the device in situ, and forming oxide films (11) on the surfaces of the gallium oxide substrate (1) and the Schottky contact electrode areas;
s4, removing the oxide film (11) on the lower surface of the gallium oxide substrate (1), depositing an ohmic contact electrode (4) on the lower surface of the gallium oxide substrate (1), and then annealing in nitrogen at 470 ℃ to form ohmic contact;
s5, removing the oxide films (11) on the surfaces of the Schottky contact electrode areas, depositing Schottky contact metal in the Schottky contact electrode areas, and then annealing at the temperature of 350 ℃ under nitrogen to form a plurality of Schottky contact electrodes (3) in the surface layer of the gallium oxide-gallium nanoparticle composite active layer (2);
s6, depositing metal conductive electrodes (5) on the surface of the gallium oxide-gallium nanoparticle composite active layer (2) so that the metal conductive electrodes (5) are distributed at intervals, and then carrying out secondary low-temperature annealing at 55 ℃.
2. The gallium oxide schottky junction ultraviolet detector according to claim 1, wherein the thickness of the gallium oxide substrate (1) is 0.05-1 mm, the material is n+ga2o3, and the doping concentration is 1×1018-1×1020cm "3; the thickness of the gallium oxide-gallium nanoparticle composite active layer (2) is 0.1-0.4 mu m.
3. Gallium oxide schottky junction ultraviolet detector according to claim 1, characterized in that the gallium oxide-gallium nanoparticle composite active layer (2) comprises several gallium oxide epitaxial layers (21) and several gallium metal layers (22), wherein several of the gallium oxide epitaxial layers (21) and several of the gallium metal layers (22) are alternately stacked in sequence, and the gallium metal layers (22) are located between two adjacent gallium oxide epitaxial layers (21).
4. A gallium oxide schottky junction ultraviolet detector according to claim 3, wherein the number of gallium oxide epitaxial layers (21) is 2, the number of gallium metal layers (22) is 1, and the gallium metal layers (22) are located between two gallium oxide epitaxial layers (21).
5. A gallium oxide schottky junction ultraviolet detector according to claim 3, wherein the gallium metal layer (22) comprises at least one layer of gallium metal nanoparticles.
6. The gallium oxide schottky junction ultraviolet detector of claim 5, wherein the gallium metal nanoparticles have a diameter of 5-50 nm.
7. A gallium oxide schottky junction ultraviolet detector according to claim 3, wherein the doping concentration of the gallium oxide epitaxial layer (21) is less than 1 x 1015cm "3.
8. Gallium oxide schottky junction ultraviolet detector according to claim 1, further comprising a passivation layer (6), the passivation layer (6) being located between the metal conductive electrode (5) and the gallium oxide-gallium nanoparticle composite active layer (2) and between adjacent two of the schottky contact electrodes (3).
9. The method for manufacturing a gallium oxide schottky junction ultraviolet detector according to claim 1, wherein step S1 includes the steps of:
s11, epitaxially growing a gallium oxide epitaxial layer (21) on the gallium oxide substrate (1);
s12, depositing a gallium metal layer (22) on the gallium oxide epitaxial layer (21);
s13, repeating the step S11 and the step S12, so that the gallium metal layer (22) is positioned between two adjacent gallium oxide epitaxial layers (21);
and S14, annealing the device to form the gallium oxide-gallium nanoparticle composite active layer (2).
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