CN106876515A - Visible blind photodetector of thin-film transistor structure and preparation method thereof - Google Patents
Visible blind photodetector of thin-film transistor structure and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 111
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 127
- 239000010408 film Substances 0.000 claims abstract description 76
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 24
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical group [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 27
- 230000000052 comparative effect Effects 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000000137 annealing Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 238000012986 modification Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
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- 238000001704 evaporation Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 230000004044 response Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DSCFFEYYQKSRSV-KLJZZCKASA-N D-pinitol Chemical compound CO[C@@H]1[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)[C@H]1O DSCFFEYYQKSRSV-KLJZZCKASA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000021393 food security Nutrition 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of visible blind photodetector of thin-film transistor structure, it includes thin film transistor (TFT), and thin film transistor (TFT) includes grid, semiconductor channel and the gate dielectric layer between grid and semiconductor channel layer；The visible blind photodetector of thin-film transistor structure also compensated semiconductor film and transparent metal-oxide film including layer of transparent, the compensated semiconductor film is positioned at semiconductor channel layer away from gate dielectric layer side, the compensated semiconductor film is suitable to form pn-junction with semiconductor channel layer, and metal-oxide film is arranged between semiconductor channel layer and compensated semiconductor film.Disclosed herein as well is a kind of preparation method of the visible blind photodetector of thin-film transistor structure.The pn-junction that compensated semiconductor film is formed with semiconductor channel layer can produce built in field to hinder the restructuring of light induced electron and photohole, extend the life-span of photo-generated carrier so that UV, visible light Optical Rejection Ratio increases.
Description
Technical field
The application is related to visible blind photodetector of a kind of thin-film transistor structure and preparation method thereof, belongs to semiconductor light
Electro-detection technology field.
Background technology
Ultraviolet detection technology is the new Detection Techniques grown up after infrared detection technique, is widely used in
The fields such as military affairs, medical science, biology, food security.The key of ultraviolet detection technology is to prepare high sensitivity, low noise, small power consumption
UV photodetector.Gradually input Military Application and commercialized UV photodetector part have ultraviolet photoelectric multiplier at present
Pipe, ultraviolet enhancer and solid ultraviolet detector.Solid ultraviolet detector is always the focus of various countries' research.Solid ultraviolet detection
Device is a kind of new ultraviolet detector, is mainly prohibited including ultraviolet avalanche diode, GaAs ultraviolet detector and based on width
UV photodetector with semiconductor.
Traditional solid ultraviolet detector is all two terminal device, such as photoconduction type, photodiode type, using M-S-M types,
The structures such as p-i-n types.Traditional solid ultraviolet detector has the advantages that fast response time, low noise, sensitivity are high, but
Have that power consumption is high, poor compatibility, the deficiency such as volume heaviness.
Additionally, three terminal device such as film transistor type UV photodetector compatibility is preferably, it is easy to large-area circuits collection
Into, and continuing to develop with flexible electronic device, more widened the range of application of phototransistor, such as electronic skin, can
Wearable photodetector etc..Current optical responsivity is big, and sensitivity film transistor type UV photodetector high has been shown in
All reports, but still have that UV, visible light Optical Rejection Ratio is small, and preparation cost is high, the problems such as complex process.
The content of the invention
According to the one side of the application, there is provided a kind of visible blind photodetector of thin-film transistor structure, the film
The visible blind photodetector of transistor arrangement has the advantages that preparation process is simple, UV, visible light Optical Rejection Ratio are big.
The visible blind photodetector of thin-film transistor structure includes thin film transistor (TFT), and the thin film transistor (TFT) includes grid
Pole, semiconductor channel layer, the gate dielectric layer between the grid and the semiconductor channel layer, the thin film transistor (TFT) knot
The visible blind photodetector of structure is characterised by that, also including transparent compensated semiconductor film, the compensated semiconductor is thin
Film be located at the semiconductor channel layer away from the gate dielectric layer side, the compensated semiconductor film is suitable to and described half
Conductor channel layer forms pn-junction；With transparent metal-oxide film, the metal-oxide film is arranged on the semiconductor
Between channel layer and the compensated semiconductor film.
Preferably, the material of the semiconductor channel layer is indium gallium zinc oxide, and the compensated semiconductor film is p-type
Semiconductive thin film.
Preferably, the compensated semiconductor film is made up of macromolecular material.
Preferably, the thickness of the compensated semiconductor film is 30~50nm.
Preferably, the thickness of the semiconductor channel layer is 40~60nm.
Preferably, the breadth length ratio of the semiconductor channel layer is 800um:200um.
Preferably, the metal-oxide film is stannous oxide film, nickel oxide film or aluminum oxide film.
Preferably, the thickness of the metal-oxide film is below 10nm.
According to the another aspect of the application, there is provided a kind of preparation of the visible blind photodetector of thin-film transistor structure
Method, it includes：Thin film transistor (TFT) is formed, the thin film transistor (TFT) includes grid, semiconductor channel layer and positioned at the grid
Gate dielectric layer between pole and the semiconductor channel layer, the preparation method is characterised by, also includes：Using spin-coating method and light
Lithography forms compensated semiconductor film in the semiconductor channel layer away from the gate dielectric layer side, wherein, it is described mutual
Apotype semiconductive thin film is suitable to form pn-junction with the semiconductor channel layer.
Preferably, the preparation method includes：Using sol evenning machine on substrate spin coating photoresist, baking photoresist 3~
10min；The pattern of the compensated semiconductor film is formed on the photoresist by exposure imaging；Will be partly using sol evenning machine
Conductor solution is spun in the pattern of the compensated semiconductor film；Substrate after spin coating semiconductor solution is surpassed in acetone
Sound cleans 5~10min；Substrate after ultrasonic cleaning is annealed.
Relative to traditional visible blind photodetector, the application is by three terminal device thin film transistor (TFT) and two terminal device pn-junction
Dexterously it is coupled.In thin film transistor (TFT), substantial amounts of photoproduction is produced because semiconductor channel layer can absorb ultraviolet light
Electronics and photohole, but light induced electron and photohole can be recombinated.However, according to the technical scheme of the application, mutually
The pn-junction that apotype semiconductive thin film is formed with the semiconductor channel layer can produce built in field to hinder light induced electron and light
The restructuring in raw hole, so as to extend the life-span of photo-generated carrier, enhances photoelectric respone so that UV, visible light Optical Rejection Ratio
Greatly.
Additionally, the application forms compensated semiconductor film using sol evenning machine spin coating semiconductor solution, it is not necessary to carry out
Magnetron sputtering, preparation process is simple.
Brief description of the drawings
Fig. 1 is the structural representation of the visible blind photodetector of thin-film transistor structure according to the embodiment of the application one；
Fig. 2 is the preparation flow figure of the visible blind photodetector of thin-film transistor structure according to the embodiment of the application one,
Wherein, Fig. 2 (a) is the structure chart of the thin film transistor (TFT) for preparing, and Fig. 2 (b) is semiconductor channel layer surface modification metal oxide
The structural representation of layer, Fig. 2 (c) is the structural representation of semiconductor channel layer surface modification layer of p-type material；
Fig. 3 is the change of thin film transistor (TFT) transfer curve in half-light, visible ray and under ultraviolet irradiation condition of comparative example one
Schematic diagram；
Fig. 4 is the visible blind photodetector of thin-film transistor structure of embodiment one in half-light, visible ray and ultraviolet lighting
Under the conditions of transfer curve change schematic diagram；
Fig. 5 is the visible blind photodetector of thin-film transistor structure of embodiment two in half-light, visible ray and ultraviolet lighting
Under the conditions of transfer curve change schematic diagram；
Fig. 6 is the change of thin film transistor (TFT) transfer curve in half-light, visible ray and under ultraviolet irradiation condition of comparative example two
Schematic diagram；
Fig. 7 is the visible blind photodetector of thin-film transistor structure of embodiment three in half-light, visible ray and ultraviolet lighting
Under the conditions of transfer curve change schematic diagram.
Specific embodiment
With reference to embodiment in detail the application is described in detail, but the application is not limited to these embodiments.
Fig. 1 is the structural representation of the visible blind photodetector of thin-film transistor structure according to the embodiment of the application one.
The visible blind photodetector of the thin-film transistor structure effectively couples three terminal device thin film transistor (TFT) and two terminal device pn-junction
Together.Wherein, the visible blind photodetector of thin-film transistor structure includes gate electrode 1, the gate medium positioned at the surface of gate electrode 1
The layer 2, semiconductor channel layer 3 positioned at the surface of gate dielectric layer 2, the source electrode 4 for being located at the surface left and right sides of semiconductor channel layer 3 respectively
With drain electrode 5, the transparent metal oxide layer 6 positioned at source electrode 4 and the surface of drain electrode 5 and the surface of semiconductor channel layer 3 and
The transparent polymer semiconductive thin film 7 of p-type.
The application this embodiment for original thin film transistor (TFT), in its transistor semiconductor channel layer surface
The transparent metal oxide layer that a layer thickness is below 10nm is modified, in the present embodiment the preferred material of transparent metal oxide layer
It is stannous oxide.Set transparent metal oxide layer the reason for be, the TFT semiconductors channel layer surface state of annealed state
Reduce, be difficult to be formed pn-junction with p-type material, thus TFT semiconductors channel layer surface deposit a layer thickness for 10nm with
Under stannous oxide improve the surface state of semiconductor channel layer.On the one hand, during stannous oxide can adsorb air and channel layer
Oxygen become tin ash, increased the Lacking oxygen of semiconductor channel layer, improve carrier concentration, " activation " semiconductor ditch
Channel layer, further, the electronics in semiconductor channel layer can be by tunneling effect through stannous oxide layer so that semiconductor ditch
Channel layer is easier to form pn-junction with p-type material；On the other hand, stannous oxide layer can suitably completely cut off in air moisture and oxygen
Gas, improves the stability of thin film transistor (TFT).
Core prepared by the visible blind photodetector of thin-film transistor structure of the application is semiconductor channel layer surface
One layer of p material of modification, n-type semiconductor raceway groove forms pn-junction with p-type material, under action of ultraviolet light, due to built in field
Effect causes that light induced electron is not susceptible to restructuring with photohole, extends the life-span of photo-generated carrier, increased substantial amounts of light
Raw carrier, produces stronger electrical signal, enhances photoelectric effect, and then reach the purpose of photodetection.
Preferably, the p-type material that the application is selected is semiconducting polymer material PEDOT:PSS.PEDOT:PSS is a kind of
Performance is relatively stablized, and film forming is preferable, band gap p-type macromolecule membrane wider.The application is thin by p-type macromolecule using sol evenning machine
Membrane material is uniformly spun to the semiconductor channel layer surface after having modified stannous oxide film, for p-type inorganic material
With preparation process is simple (inorganic material film forming generally uses magnetron sputtering method), low production cost, it is easy to film forming, and repeatability
The advantages of good.
The visible blind photodetector of thin film transistor (TFT) of the application is dexterously by transistor three terminal device and the end-apparatus of pn-junction two
Part is coupled, the advantage for not only possessing two terminal device, and the visible blind photodetector based on thin-film transistor structure
It is easily integrated, compatibility will be far superior to traditional photodetector.
Preferably, the thin film transistor (TFT) according to the application embodiment uses indium gallium zinc oxide thin film transistor (TFT).Indium gallium
Zinc oxide film transistor performance is superior, is displayed for device, resistance-variable storing device and photoelectric device.
Fig. 2 is the flow chart of the visible blind photodetector preparation method of thin film transistor (TFT) according to the embodiment of the application one.
As shown in Fig. 2 the preparation method includes：
Step 1：The preparation of thin film transistor (TFT)
Thermal oxide silicon chip (the SiO produced using No.46 Research Institute, China Electronic Science Group Co., Ltd2/p+Si
(100)) as substrate, grid is highly doped p-type Si, and thickness is 375 ± 15um, and gate dielectric layer is SiO2, thickness be 100 ±
20nm。
By breadth length ratio it is 800um with high temperature gummed tape:The mask plate of 200um is attached to gate medium surface, in magnetic control sputtering device
Middle deposited semiconductor channel layer, target used is indium gallium zinc oxygen target (IGZO target, In2O3:Ga2O3:ZnO=1:1:1), temperature
Degree is controlled to room temperature, and the power of sputtering is 60W, and sputtering time is 20~30min, the semiconductor channel layer thickness of deposition for 40~
60nm, the argon gas and the flow-rate ratio of oxygen being passed through in sputter procedure in the chamber of magnetic control sputtering device is 6sccm:0sccm, in chamber
Gas pressure intensity is 0.19pa.
After having deposited semiconductor channel layer, using electron beam evaporation equipment using mask plate method in semiconductor channel layer surface
The left and right sides deposits source electrode and drain electrode respectively.The evaporation material of use is titanium and gold.According to the film of the application embodiment
The source electrode and drain electrode of transistor are double-level-metal electrode, i.e., one layer of titanium film electrode of 50nm is first deposited, then in titanium
Membrane electrode surface deposits one layer of gold film electrode of 20nm.
Then, the thin film transistor (TFT) that will be prepared is made annealing treatment in being put into air anneal stove.The condition of annealing is：
250 DEG C were warmed up to by 1 hour in 25 DEG C of air atmosphere, 1~3 hour is incubated at 250 DEG C, last Temperature fall to 25
℃。
The preparation of thin film transistor (TFT) is completed, shown in such as Fig. 2 (a).
Step 2：It can be seen that the preparation of blind photodetector
After completing the preparation of annealed state IGZO thin film transistor (TFT)s, electron beam evaporation equipment and tin oxide evaporation material is recycled to exist
Film crystal pipe surface deposits one layer of stannous oxide layer, and the thickness of stannous oxide is 1~10nm, shown in such as Fig. 2 (b).
It is covered with transparent metal oxide layer, i.e. the TFT semiconductors channel layer of stannous oxide layer using light above-mentioned
Lithography and spin-coating method modify onto channel layer p-type macromolecule membrane.Comprise the following steps that：
(1) using sol evenning machine by photoresist be spin-coated on it is described be covered with the thin film transistor (TFT) of metal oxide layer, in baking machine
On baking treatment is carried out to photoresist.
(2) thin film transistor (TFT) that will scribble photoresist puts corresponding photolithography plate well in advance, is exposed on ultraviolet photolithographic machine.Expose
After light terminates, develop 20~30s in developer solution, and cleans 1~5min in deionized water, removes the photoetching of exposure area
Glue, exposed portion is covered with the semiconductor channel layer of metal oxide layer.
(3) solutions of polymer semiconductors is spun on the thin film transistor (TFT) in step (2) using sol evenning machine, spin coating proceeding
For：800r/min keeps 20s, quick 4000r/min to keep 60s at a slow speed.Then it is cleaned by ultrasonic 5~10min, purpose in acetone
It is the photoresist for removing film crystal pipe surface unexposed area.
(4) thin film transistor (TFT) for scribbling semiconducting polymer's film in step (3) is placed in air anneal stove
Row annealing, annealing conditions are to be warmed up to 120 DEG C by 30 minutes in 25 DEG C of air atmosphere, and 10 are incubated at 120 DEG C
~30min, last Temperature fall is to 25 DEG C；
So far, the preparation of visible blind photodetector is completed, shown in such as Fig. 2 (c).
It is visible blind photodetector of the thin film transistor (TFT) for more clearly describing the application and preparation method thereof, below will be with
Different embodiments is carried out further to visible blind photodetector of oxide thin film transistor of the application and preparation method thereof
Explanation.
Embodiment one
(1) IGZO thin film transistor (TFT)s are prepared
(1.1) using the thermal oxide silicon chip (SiO of No.46 Research Institute, China Electronic Science Group Co., Ltd's production2/p+Si
(100)) as substrate, grid is highly doped p-type Si, and thickness is 375 ± 15um, and gate dielectric layer is SiO2, thickness be 100 ±
20nm.By breadth length ratio it is 800um with high temperature gummed tape:The mask plate of 200um is attached to gate medium surface, is sunk in magnetic control sputtering device
Product semiconductor channel layer, temperature control is room temperature, and the power of sputtering is 60W, and sputtering time is about 25min, in sputter procedure
The argon gas and the flow-rate ratio of oxygen being passed through in the chamber of magnetic control sputtering device are 6sccm:0sccm, gas pressure intensity is in chamber
0.19pa, the semiconductor channel layer thickness substantially 45nm of deposition.
(1.2) after having deposited semiconductor channel layer, using electron beam evaporation equipment using mask plate method in semiconductor channel
The layer surface left and right sides deposits source electrode and drain electrode respectively.The evaporation material of use is titanium and gold.In embodiment one source electrode and
Drain electrode is double-level-metal electrode, i.e., first deposit one layer of titanium film electrode of 50nm, then deposit one in titanium film electrode surface
The gold film electrode of layer 20nm.
(1.3) and then, the thin film transistor (TFT) that will be prepared is made annealing treatment in being put into air anneal stove.The condition of annealing
For：250 DEG C were warmed up to by 1 hour in 25 DEG C of air atmosphere, 1 hour is incubated at 250 DEG C, last Temperature fall to 25
℃。
It should be noted that oxide thin film transistor prepared by embodiment one is indium gallium zinc oxide thin film transistor (TFT).
(2) visible blind photodetector is prepared
(2.1) after completing the preparation of annealed state IGZO thin film transistor (TFT)s, electron beam evaporation equipment and tin oxide is recycled to steam
Material issuing deposits one layer of stannous oxide layer in film crystal pipe surface, and the thickness of stannous oxide is 5nm.
(2.2) using sol evenning machine by photoresist be spin-coated on it is described be covered with the thin film transistor (TFT) of metal oxide layer, drying
Baking treatment is carried out to photoresist on roasting machine.
(2.3) thin film transistor (TFT) that will scribble photoresist puts corresponding photolithography plate well in advance, is exposed on ultraviolet photolithographic machine.
After end exposure, develop 20s in developer solution, and 1min is cleaned in deionized water, removes the photoresist of exposure area, exposed division
Divide the semiconductor channel layer for being covered with metal oxide layer.
(2.4) solutions of polymer semiconductors is spun on the thin film transistor (TFT) in step (1) using sol evenning machine, spin coating work
Skill is：800r/min keeps 20s, quick 4000r/min to keep 60s at a slow speed.Then it is cleaned by ultrasonic 5min in acetone, it is therefore an objective to
Remove the photoresist of film crystal pipe surface unexposed area.
(2.5) thin film transistor (TFT) for scribbling semiconducting polymer's film in step (2.4) is placed on air anneal stove
In made annealing treatment, annealing conditions are to be warmed up to 120 DEG C by 30 minutes in 25 DEG C of air atmosphere, at 120 DEG C protect
Temperature 20 minutes, last Temperature fall is to 25 DEG C.
It has been finally completed the preparation of the visible blind photodetector of thin-film transistor structure.
Embodiment two
Embodiment two using and the identical preparation technology of embodiment one, difference is only to prepare oxygen carrying out electron beam evaporation
When changing stannous film, i.e. coating, the thickness of deposition is 8nm.
Comparative example one
The visible blind photodetector of thin-film transistor structure according to comparative example one, does not do in its semiconductor channel layer surface
Modification.Preparation method comprises the following steps：
(1) using the thermal oxide silicon chip (SiO of No.46 Research Institute, China Electronic Science Group Co., Ltd's production2/p+Si
(100)) as substrate, grid is highly doped p-type Si, and thickness is 375 ± 15um, and gate dielectric layer is SiO2, thickness be 100 ±
20nm.By breadth length ratio it is 800um with high temperature gummed tape:The mask plate of 200um is attached to gate medium surface, is sunk in magnetic control sputtering device
Product semiconductor channel layer, temperature control is room temperature, and the power of sputtering is 60W, and sputtering time is about 25min, in sputter procedure
The argon gas and the flow-rate ratio of oxygen being passed through in the chamber of magnetic control sputtering device are 6sccm:0sccm, gas pressure intensity is in chamber
0.19pa, the semiconductor channel layer thickness of deposition is about 45nm.
(2) after having deposited semiconductor channel layer, using electron beam evaporation equipment using mask plate method in semiconductor channel layer
The surface left and right sides deposits source electrode and drain electrode respectively.The evaporation material of use is titanium and gold.Film according to comparative example one is brilliant
The source electrode and drain electrode of body pipe are double-level-metal electrode, i.e., first deposit one layer of titanium film electrode of 50nm, then titanium film electricity
Pole surface deposits one layer of gold film electrode of 20nm.
(3) and then, the thin film transistor (TFT) that will be prepared is made annealing treatment in being put into air anneal stove.The condition of annealing
For：250 DEG C were warmed up to by 1 hour in 25 DEG C of air atmosphere, 1 hour is incubated at 250 DEG C, last Temperature fall to 25
℃。
Finally, the preparation of thin film transistor (TFT) is completed.It should be noted that the oxide thin film transistor of comparative example one is same
Sample is indium gallium zinc oxide thin film transistor (TFT).
Using semiconductor parameter instrument and monochromator to the thin film transistor (TFT) in embodiment one, embodiment two and comparative example one
Transfer curve under subdued light conditions, under visible light conditions and under ultraviolet light conditions is characterized.
It should be noted that under certain ultraviolet irradiation condition, due to producing substantial amounts of photo-generated carrier so that crystal
There is negative sense drift in the transfer curve of pipe, and off-state current substantially rises relative to subdued light conditions.Therefore can be by illumination before and after
The drift trend of transfer curve reflects the power of photoelectric respone.Additionally, optical responsivity R and UV, visible light Optical Rejection Ratio are reflections
It can be seen that the key parameters of blind photodetector.Wherein, optical responsivity R can be by formula R=Iph/PinObtain, wherein, photoelectricity
Stream IphIt is the difference of illumination condition and source-drain current under subdued light conditions, luminous power PinIt is optical power density and channel area multiplies
Product.UV, visible light Optical Rejection Ratio is in the ultraviolet light in OFF state region and the optical responsivity ratio R of visible ray using transistoruv/
Rvisible lightTo represent.
Shown in Fig. 3 is that thin film transistor (TFT) in comparative example one shifts song under half-light, visible ray and ultraviolet irradiation condition
The change of line；Shown in Fig. 4 and Fig. 5 is respectively the visible blind smooth electrical resistivity survey of thin-film transistor structure in embodiment one and embodiment two
The change of survey device transfer curve in half-light, visible ray and under ultraviolet irradiation condition.Wherein, a length of 450nm of the visible light wave of selection,
Optical power density P is 200uw/cm2, ultraviolet light wave a length of 350nm, optical power density P of selection are 11uw/cm2, light application time
It is 1min.According to Fig. 3, Fig. 4, Fig. 5 and correlation formula, in the maximum of ultraviolet region before and after the modification of transistor semiconductor channel layer
Optical responsivity RmaxWith UV, visible light Optical Rejection Ratio Ruv/Rvisible lightAs shown in table 1：
[table 1]
As shown in Fig. 3, Fig. 4, Fig. 5, the visible blind photodetector of thin-film transistor structure does not almost have under 450nm visible rays
There is response, and it is obvious to being responded under 350nm ultraviolet lights.I.e. under 450nm illumination conditions, the transfer curve of thin film transistor (TFT) is almost
It is not moved, and under the conditions of 350nm UV Lights, due to producing substantial amounts of photo-generated carrier so that thin film transistor (TFT)
Transfer curve there is apparent negative sense drift, and off-state current substantially rises.
As shown in table 1, the photoelectric response performance of the visible blind photodetector of thin-film transistor structure according to the application will
Semiconductor channel layer surface does not make the thin film transistor (TFT) modified in being substantially better than comparative example one.I.e. in embodiment one and embodiment two
Maximum photoelectric current Iph, maximum optical responsivity R and UV, visible light Optical Rejection Ratio be all higher than the thin film transistor (TFT) of comparative example one.With
The increase of metal oxide cover thickness, maximum optical responsivity R and UV, visible light Optical Rejection Ratio are in the trend of increase.When covering
When depth of cover is 8nm, the UV, visible light Optical Rejection Ratio of the visible blind photodetector of thin-film transistor structure is relative to comparative example
Thin film transistor (TFT) in one increased 3 orders of magnitude.
Can be drawn according to table 1, the visible blind photodetector of thin-film transistor structure to the photoelectric respone of ultraviolet light very
Substantially, UV, visible light Optical Rejection Ratio is very big.With the increase of metal oxide cover thickness, its photoelectric respone is remarkably reinforced.
The visible blind photodetector optical responsivity of thin-film transistor structure and UV, visible light Optical Rejection Ratio of the application are very big, are preferable
UV photodetector.
Comparative example two：
The visible blind photodetector of thin-film transistor structure according to comparative example two, does not do in its semiconductor channel layer surface
Modification.The preparation method of comparative example two is identical with comparative example one, wherein semiconductor channel layer is prepared using magnetic control sputtering device, deposition
Thickness is 58nm.
Embodiment three：
The use of embodiment three and the identical preparation technology of embodiment one, difference are only to prepare partly to lead using magnetic control sputtering device
Body channel layer, the thickness of deposition is 58nm.
Also with the thin film transistor (TFT) in semiconductor parameter instrument and monochromator comparative example two and embodiment three in half-light bar
Transfer curve characteristic under part, under visible light conditions and under ultraviolet light conditions is characterized.
Shown in Fig. 5 is the thin film transistor (TFT) of comparative example two in half-light, visible ray and transfer curve under ultraviolet irradiation condition
Change；Shown in Fig. 6 is the visible blind photodetector of thin-film transistor structure of embodiment three in half-light, visible ray and ultraviolet
The change of transfer curve under illumination condition.Wherein, a length of 550nm of the visible light wave of selection, P are 320uw/cm2, selection it is ultraviolet
Light wave a length of 330nm, P are 2uw/cm2, light application time is 1min.According to Fig. 5, Fig. 6 and correlation formula, transistor semiconductor
In the maximum photoelectric current I of ultraviolet region before and after channel layer modificationph, maximum optical responsivity R and UV, visible light Optical Rejection Ratio Ruv/
Rvisible lightAs shown in table 2：
[table 2]
The visible blind photodetection of thin-film transistor structure in comparative example two and embodiment three is can be seen that from Fig. 6, Fig. 7
Device is almost not responding to 550nm visible rays, and to 330nm ultraviolet light responses substantially, this and comparative example one, embodiment one, implements
The photoelectric respone phenomenon of the thin film transistor (TFT) in example two is similar.It can be seen from Table 2 that, after semiconductor channel layer is modified
Transistor photoelectric respone enhancing, maximum photoelectric current and maximum optical responsivity R increase an order of magnitude, UV, visible light Optical Rejection Ratio
Improve 4 orders of magnitude.Understand that ultraviolet wavelength is shorter, and the photoelectric respone of photodetector is more obvious with reference to table 1.Therefore, this Shen
The visible blind photodetector of thin-film transistor structure please is preferable photodetector.
In the embodiment above, the material of semiconductor channel layer is indium gallium zinc oxide, and semiconductive thin film is p-type semiconductor
Film.However, the application not limited to this.As long as transparent semiconductive thin film is positioned at the semiconductor channel layer away from the grid
Dielectric layer side, and semiconductive thin film and semiconductor channel layer are compensated semiconductor, i.e. and compensated semiconductor film is suitable to
Pn-junction is formed with semiconductor channel layer, that is, meets the technological thought of the application.For example, in the feelings using p-Si semiconductor channel layers
Under condition, if semiconductor channel layer adulterates for p-type, transparent compensated semiconductor film should be n-type semiconductor；If partly led
Body channel layer adulterates for N-shaped, then transparent compensated semiconductor film should be p-type semiconductor.
Additionally, in the embodiment above, using bottom gate thin film transistor.However, the application not limited to this.As long as thoroughly
Bright semiconductive thin film be located at the semiconductor channel layer away from the gate dielectric layer side, and semiconductive thin film with partly lead
Body channel layer is compensated semiconductor, i.e. compensated semiconductor film is suitable to form pn-junction with semiconductor channel layer, that is, meet this
The technological thought of application.For example, in the case of using top gate type thin film transistor, can be using spin-coating method and photoetching process by thoroughly
Bright compensated semiconductor film is formed on transparent glass substrate, then sequentially forms gold on compensated semiconductor film
Category sull and semiconductor channel layer.
Additionally, in the embodiment above, stannous oxide film is modified with transistor semiconductor channel layer surface.However,
The application not limited to this.As long as the metal-oxide film energy being arranged between semiconductor channel layer and compensated semiconductor film
Enough improve the surface state of semiconductor channel layer, then can use other transparent metal-oxide films.For example, oxygen can be selected
Change nickel film or aluminum oxide film as transparent metal oxide layer film.
The above, is only several embodiments of the application, any type of limitation is not done to the application, although this Shen
Please disclosed as above with preferred embodiment, but and be not used to limit the application, any those skilled in the art are not taking off
In the range of technical scheme, make a little variation using the technology contents of the disclosure above or modification is equal to
Effect case study on implementation, belongs in the range of technical scheme.
Claims (10)
1. the visible blind photodetector of a kind of thin-film transistor structure, it includes thin film transistor (TFT), and the thin film transistor (TFT) includes
Grid, semiconductor channel layer and the gate dielectric layer between the grid and the semiconductor channel layer,
Characterized in that, also including：
Transparent compensated semiconductor film, the compensated semiconductor film is positioned at the semiconductor channel layer away from described
Gate dielectric layer side, the compensated semiconductor film is suitable to form pn-junction with the semiconductor channel layer；With
Transparent metal-oxide film, the metal-oxide film is arranged on the semiconductor channel layer and the complementary type
Between semiconductive thin film.
2. the visible blind photodetector of thin-film transistor structure according to claim 1, it is characterised in that the semiconductor
The material of channel layer is indium gallium zinc oxide, and the compensated semiconductor film is p-type semiconductor film.
3. the visible blind photodetector of thin-film transistor structure according to claim 2, it is characterised in that the complementary type
Semiconductive thin film is made up of macromolecular material.
4. the visible blind photodetector of thin-film transistor structure according to claim 2, it is characterised in that the complementary type
The thickness of semiconductive thin film is 30~50nm.
5. the visible blind photodetector of thin-film transistor structure according to any one of claim 1 to 4, its feature exists
In the thickness of the semiconductor channel layer is 40~60nm.
6. the visible blind photodetector of thin-film transistor structure according to any one of claim 1 to 4, its feature exists
In the breadth length ratio of the semiconductor channel layer is 800um:200um.
7. the visible blind photodetector of thin-film transistor structure according to any one of claim 1 to 4, its feature exists
In the metal-oxide film is stannous oxide film, nickel oxide film or aluminum oxide film.
8. the visible blind photodetector of thin-film transistor structure according to claim 7, it is characterised in that the metal oxygen
The thickness of compound film is below 10nm.
9. the preparation method of the visible blind photodetector of a kind of thin-film transistor structure, it includes：
Thin film transistor (TFT) is formed, the thin film transistor (TFT) includes grid, semiconductor channel layer and positioned at the grid and described
Gate dielectric layer between semiconductor channel layer,
Characterized in that, also including：
Complementary type is formed using spin-coating method and photoetching process away from the gate dielectric layer side in the semiconductor channel layer partly to lead
Body thin film, wherein, the compensated semiconductor film is suitable to form pn-junction with the semiconductor channel layer.
10. preparation method according to claim 9, it is characterised in that including：
Using sol evenning machine on substrate spin coating photoresist, baking photoresist 3~10min；
The pattern of the compensated semiconductor film is formed on the photoresist by exposure imaging；
Semiconductor solution is spun in the pattern of the compensated semiconductor film using sol evenning machine；
Substrate after spin coating semiconductor solution is cleaned by ultrasonic 5~10min in acetone；
Substrate after ultrasonic cleaning is annealed.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742180A (en) * | 2018-12-28 | 2019-05-10 | 中国科学院宁波材料技术与工程研究所 | A kind of deep ultraviolet light electric explorer based on amorphous oxide gallium based thin film transistors |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119525A (en) * | 2002-09-24 | 2004-04-15 | Japan Science & Technology Corp | Oxide semiconductor pn junction device |
| CN101447524A (en) * | 2008-12-25 | 2009-06-03 | 吉林大学 | Punch through effect enhanced type silicon photo transistor |
| CN104332559A (en) * | 2014-11-26 | 2015-02-04 | 中国科学院微电子研究所 | Low operation voltage organic field effect transistor and preparation method thereof |
| CN104992981A (en) * | 2015-05-26 | 2015-10-21 | 中国科学院宁波材料技术与工程研究所 | Oxide thin film transistor, preparation method thereof, phase inverter and preparation method thereof |
| CN105136893A (en) * | 2015-06-24 | 2015-12-09 | 中国科学院宁波材料技术与工程研究所 | Thin film transistor biosensor and preparation method thereof |
| CN105140397A (en) * | 2015-07-01 | 2015-12-09 | 深圳大学 | Organic bulk heterojunction photoresistor and preparation method thereof |
| CN105552131A (en) * | 2016-01-27 | 2016-05-04 | 东南大学 | Novel high-performance light modulation thin film transistor based on quantum dot doped gate insulating layer |
-
2017
- 2017-03-06 CN CN201710127219.1A patent/CN106876515B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119525A (en) * | 2002-09-24 | 2004-04-15 | Japan Science & Technology Corp | Oxide semiconductor pn junction device |
| CN101447524A (en) * | 2008-12-25 | 2009-06-03 | 吉林大学 | Punch through effect enhanced type silicon photo transistor |
| CN104332559A (en) * | 2014-11-26 | 2015-02-04 | 中国科学院微电子研究所 | Low operation voltage organic field effect transistor and preparation method thereof |
| CN104992981A (en) * | 2015-05-26 | 2015-10-21 | 中国科学院宁波材料技术与工程研究所 | Oxide thin film transistor, preparation method thereof, phase inverter and preparation method thereof |
| CN105136893A (en) * | 2015-06-24 | 2015-12-09 | 中国科学院宁波材料技术与工程研究所 | Thin film transistor biosensor and preparation method thereof |
| CN105140397A (en) * | 2015-07-01 | 2015-12-09 | 深圳大学 | Organic bulk heterojunction photoresistor and preparation method thereof |
| CN105552131A (en) * | 2016-01-27 | 2016-05-04 | 东南大学 | Novel high-performance light modulation thin film transistor based on quantum dot doped gate insulating layer |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742180A (en) * | 2018-12-28 | 2019-05-10 | 中国科学院宁波材料技术与工程研究所 | A kind of deep ultraviolet light electric explorer based on amorphous oxide gallium based thin film transistors |
| CN110120349A (en) * | 2019-05-15 | 2019-08-13 | 东南大学成贤学院 | The source-drain electrode and crystal tube preparation method of InGaZnO thin film transistor (TFT) |
| CN110034192A (en) * | 2019-05-17 | 2019-07-19 | 山东大学深圳研究院 | Utilize the gallium oxide field-effect tube and preparation method of stannous oxide adjusting threshold voltage |
| CN110034192B (en) * | 2019-05-17 | 2023-11-10 | 山东大学深圳研究院 | Gallium oxide field effect transistor for regulating threshold voltage by stannous oxide and preparation method thereof |
| CN110571301A (en) * | 2019-07-31 | 2019-12-13 | 中国科学技术大学 | Gallium oxide based solar blind detector and preparation method thereof |
| CN110571301B (en) * | 2019-07-31 | 2021-07-09 | 中国科学技术大学 | Gallium oxide based solar blind detector and preparation method thereof |
| CN111180547A (en) * | 2020-01-06 | 2020-05-19 | 深圳第三代半导体研究院 | Novel two-end grating press structure SiC photodetector and preparation method thereof |
| CN111180547B (en) * | 2020-01-06 | 2022-04-05 | 深圳第三代半导体研究院 | Novel two-end grating press structure SiC photodetector and preparation method thereof |
| CN111430374A (en) * | 2020-03-31 | 2020-07-17 | 华中科技大学 | Under-screen fingerprint identification display panel with optical sensor and preparation method |
| CN112086531A (en) * | 2020-09-07 | 2020-12-15 | 深圳市绿聚墨电子科技有限公司 | Molecular material component applied to high-sensitivity photoelectric detector and manufacturing method thereof |
| CN112086531B (en) * | 2020-09-07 | 2021-06-29 | 深圳市绿聚墨电子科技有限公司 | Molecular material component applied to high-sensitivity photoelectric detector and manufacturing method thereof |
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