CN104051561B - A kind of nitridation gallio ultraviolet avalanche photodetector - Google Patents
A kind of nitridation gallio ultraviolet avalanche photodetector Download PDFInfo
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
The invention discloses a kind of nitridation gallio ultraviolet avalanche photodetector, including the Sapphire Substrate set gradually from the bottom to top, low temperature nucleation layer, N-shaped Al content gradually variational AlxInyGa1‑x‑yN shell, Alx1Iny1Ga1‑x1‑y1N/Alx2Iny2Ga1‑x2‑y2N multi-quantum pit structure uptake zone, Al content gradually variational Alx3Iny3Ga1‑x3‑y3N shell and Alx4Iny4Ga1‑x4‑y4N/Alx5Iny5Ga1‑x5‑y5N multi-quantum pit structure multiplication region；There is the advantages such as high absorption coefficient, high horizontal carrier transport factor and strong polarity effect due to MQW, therefore uptake zone and the multiplication region of nitridation gallio ultraviolet avalanche photodetector are designed as multi-quantum pit structure, both can improve the nitridation quantum efficiency of gallio ultraviolet avalanche photodetector and responsiveness, freely tune its cutoff wavelength, can effectively reduce again its avalanche breakdown voltage threshold value, have great importance for preparing high performance UV photodetector.
Description
Technical field
The present invention relates to a kind of nitridation gallio ultraviolet avalanche optoelectronic detection with multi-quantum pit structure uptake zone and multiplication region
Device, belongs to Semiconductor Optoeletronic Materials and device fabrication techniques field.
Background technology
Gallium nitride-based material mainly includes binary compound GaN, InN, AlN of III and V group element, ternary compound
Thing InGaN, AlGaN, AlInN and quaternary compound AlInGaN, have that energy gap is big, thermal conductivity is high, resistance to height
The characteristics such as temperature, radioprotective, acid and alkali-resistance, high intensity and high rigidity, in high brightness blue, green, purple, ultraviolet and white light two pole
Pipe, blue, violet lasers and the field such as radioprotective, high temperature resistant, HIGH-POWERED MICROWAVES device have a wide range of applications potentiality
With good market prospect.Ternary compound AlxGa1-xThe band gap of N can be adjusted by changing Al component so that it is
Corresponding absorbing wavelength, between 200～365nm, covers the sunlight produced owing to ozone layer absorbs ultraviolet light just
Spectrum blind area (220～290nm).Quaternary compound AlxInyGa1-x-yThe bandgap range of N (0≤x≤1,0≤y≤1) is
0.7～6.2eV, continuous print regulation can be carried out by changing Al and In component so that it is the wave-length coverage of absorption spectrum can be from
200nm (deep ultraviolet) arrives 1770nm (near-infrared).
UV photodetector all has important using value and development prospect at dual-use aspect, such as UV warming
With guidance, the detection of hydrocarbon combustion flame, the biochemical detection of gene, the research of ultraviolet astronomy, short-range
Communication and treating for skin disease etc..Nitridation gallio ultraviolet avalanche photodetector has that volume is little, lightweight, life-span length,
Shock resistance is good, running voltage is low, high temperature resistant, corrosion-resistant, Flouride-resistani acid phesphatase, quantum efficiency high and without advantages such as optical filters,
Become the study hotspot in photodetection field.AlGaN has the most excellent in terms of preparing ultraviolet avalanche photodetector
Gesture, as AlGaN ultraviolet avalanche photodetector can save the filter plate of costliness, and AlGaN has more than SiC
High efficiency of light absorption.The homoepitaxy GaN ultraviolet avalanche photodetector of preparation, its dark current in GaN substrate
Density is 10-6A/cm2Magnitude, linear model internal gain > 104, single photon detection efficiency～24%；And at sapphire
The GaN ultraviolet avalanche photodetector that on substrate prepared by extension, its dark current density is 10-4A/cm2Magnitude, linear mould
Formula internal gain close to 1000, single photon detection efficiency～30% [list of references K.Minder, J.L.Pau, R.
McClintock,P.Kung,C.Bayram,and M.Razeghi,Applied Physics Letters,91,073513,
(2007).].Utilize the technology that uptake zone separates with multiplication region, the avalanche gain factor of GaN ultraviolet avalanche photodetector
Up to 4.12 × 104[list of references J.L.Pau, C.Bayram, R.McClintock, M.Razeghi, and D.
Silversmith,Applied Physics Letters,92,101120(2008).].At present, AlGaN p-i-n type ultraviolet snowslide
The external quantum efficiency of photodetector is 37%, the avalanche multiplication factor > 2500, but the highest [list of references of dark current
R.McClintock,A.Yasan,K.Minder,P.Kung,and M.Razeghi,Applied Physics Letters,87,
241123(2005).L.Sun,J.Chen,J.Li,and H.Jiang,Applied Physics Letters,97,191103
(2010).].The gain factor of AlGaN Schottky barrier type ultraviolet avalanche photodetector is 1560, but its stability and
Reliability need to improve further [list of references T.Tut, M.Gokkavas, A.Inal, and E.Ozbay,
Applied Physics Letters,90,163506(2007).].Jiang Hao etc. disclose a kind of PIN structural ultraviolet avalanche optoelectronic
Detector [see patent: a kind of PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof, application number:
201210314750.7] with absorb based on heterojunction structure, dynode layer separates nitrogenize gallio avalanche photodetector [see patent:
Based on heterojunction structure absorption, dynode layer separation GaN base avalanche photodetector, application number: 201210333832.6],
By quaternary compound AlxInyGa1-x-yN (0≤x≤1,0≤y≤1) applies to preparation nitridation gallio ultraviolet avalanche optoelectronic detection
Device, it is achieved that high performance photodetection.
Based on GaN/Al0.27Ga0.73The UV photodetector of N multi-quantum pit structure, it is achieved that to ultraviolet band
Detection [list of references S.K.Zhang, W.B.Wang, F.Yun, L.He, the H. of (297～352nm) spectrum
X.Zhou,M.Tamargo,and R.R.Alfano,Applied Physics Letters,81(24),4628-4630
(2002).].By changing the well layer width of multi-quantum pit structure, barrier layer height and the Al component of well layer, can tune
The cutoff wavelength of GaN/AlGaN multi-quantum pit structure photodetector [list of references A.Teke, S.Dogan, F.Yun,
M.A.Reshchikov,H.Le,X.Q.Liu,H.Morkoc,S.K.Zhang,W.B.Wang,and R.R.Alfano,
Solid-State Electronics,47,1401-1408(2003).].And with Al0.1Ga0.9N/Al0.15Ga0.85N MQW is made
The active area of p-i-n type AlGaN UV photodetector, significantly improves the ionization coefficient of carrier and reduces device
Avalanche breakdown voltage threshold value [list of references S.K.Zhang, W.B.Wang, A.M.Dabiran, A.Osinsky, A.M.
Wowchak,B.Hertog,C.Plaut,P.P.Chow,S.Gundry,E.O.Troudt,and R.R.Alfano,
Applied Physics Letters,87,262113(2005).].Meanwhile, the structure ginseng of AlGaN/GaN MQW is optimized
Number, such as repetition period number, well layer width, barrier layer height and the Al component of MQW, can improve based on
Responsiveness [list of references A.Rostami, the N. of the UV photodetector of AlGaN/GaN multi-quantum pit structure
Ravanbaksh,S.Golmohammadi,and K.Abedi,International Journal of Numerical Modeling:
Electronic Networks,Devices and Fields,27,309-317(2014).]。
But, due to stratiform active area limitation in terms of controlling gain mechanism, nitridation gallio based on stratiform active area
The performance of ultraviolet avalanche photodetector, such as quantum efficiency, responsiveness, carrier ionization coefficient and avalanche breakdown voltage threshold
Values etc., await improving further, and the cutoff wavelength of device is difficult to tuning.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides one to have multi-quantum pit structure suction
Receive district and the nitridation gallio ultraviolet avalanche photodetector of multiplication region；High absorption coefficient, high laterally load due to MQW
Stream transport factor and strong polarity effect, therefore the active area of multi-quantum pit structure can improve nitridation gallio ultraviolet avalanche optoelectronic
The quantum efficiency of detector, responsiveness and carrier ionization coefficient, reduce its avalanche breakdown voltage threshold value, and can lead to
Cross and different well layer width, barrier layer height and Al components is set to tune its cutoff wavelength.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of nitridation gallio ultraviolet avalanche photodetector, becomes including the Sapphire Substrate set gradually from the bottom to top, low temperature
Stratum nucleare, N-shaped Al content gradually variational AlxInyGa1-x-yN shell, Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N MQW
Structure uptake zone, Al content gradually variational Alx3Iny3Ga1-x3-y3N shell and Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N volume
Sub-well structure multiplication region, wherein Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region is respectively as nitridation gallio ultraviolet avalanche optoelectronic
The uptake zone of detector and multiplication region, uptake zone and multiplication region are by Al content gradually variational Alx3Iny3Ga1-x3-y3N shell is separated.
Preferably, described Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region respectively have certain repetition period length and
The undoped of quantity or low-doped type Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone and non-
Doping or low-doped Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region.
Preferably, described Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region, the repetition period number of MQW is
1～20；Alx1Iny1Ga1-x1-y1N shell, Alx2Iny2Ga1-x2-y2N shell, Alx4Iny4Ga1-x4-y4N shell and
Alx5Iny5Ga1-x5-y5The thickness of N shell is all between 3～10nm.
Preferably, described Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2In N multi-quantum pit structure uptake zone, subscript x1, y1,
The satisfied following requirement of x2, y2: 0≤x1≤1,0≤y1≤1,0≤x2≤1,0≤y2≤1；Described
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region (106), subscript x4, y4, x5, y5
Meet and require as follows: 0≤x4≤1,0≤y4≤1,0≤x5≤1,0≤y5≤1.
Preferably, described Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region
Alx4Iny4Ga1-x4-y4N shell and Alx5Iny5Ga1-x5-y5The energy gap of N shell, is all higher than
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2Al in N multi-quantum pit structure uptake zonex1Iny1Ga1-x1-y1N shell and
Alx2Iny2Ga1-x2-y2The energy gap of N shell.
Preferably, described Al content gradually variational Alx3Iny3Ga1-x3-y3The energy gap of N shell exists
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2The energy gap of N multi-quantum pit structure uptake zone and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5Between the energy gap of N multi-quantum pit structure multiplication region；It is specially Al group
Divide gradual change Alx3Iny3Ga1-x3-y3The energy gap of N shell is between following two energy gap scopes:
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2Al in N multi-quantum pit structure uptake zonex1Iny1Ga1-x1-y1N shell and
Alx2Iny2Ga1-x2-y2Energy gap the greater of N shell, Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure
Al in multiplication regionx4Iny4Ga1-x4-y4N shell and Alx5Iny5Ga1-x5-y5The energy gap smaller of N shell.
Preferably, described N-shaped Al content gradually variational AlxInyGa1-x-yN shell utilizes Si to be doped, wherein the doping of Si
Concentration is 1 × 1017～1 × 1020cm-3Between.
Preferably, described N-shaped Al content gradually variational AlxInyGa1-x-yThe thickness of N shell is between 100～3000nm, under it
The satisfied following requirement of mark x, y: 0≤x≤1,0≤y≤1；Described Al content gradually variational Alx3Iny3Ga1-x3-y3The thickness of N shell
Between 10～200nm, its subscript x3, the satisfied following requirement of y3: 0≤x3≤1,0≤y3≤1.
Preferably, described N-shaped Al content gradually variational AlxInyGa1-x-yIn N shell, Al component the most continuously or uniformly ladder
Degree linear change；Described Al content gradually variational Alx3Iny3Ga1-x3-y3In N shell, Al component the most continuously or uniformly ladder
Degree linear change.
Preferably, described Sapphire Substrate is the C faceted crystal polished or the C faceted crystal with nanometer scale figure.
MQW has high absorption coefficient, high horizontal carrier transport factor and strong polarity effect.Tying based on MQW
In the nitridation gallio ultraviolet avalanche photodetector of structure active area, if the polarization induction direction of an electric field of barrier layer and extra electric field
Direction is identical, its carrier will polarized induction electric field acceleration, and pass through the interface of barrier layer and well layer, produce in well layer
Ionization by collision, thus significantly increase the ionization coefficient of carrier；If the polarization of well layer is induced direction of an electric field and is powered up outward
Identical, its carrier also can polarized induction electric field acceleration, and then improve the ionization coefficient of carrier.Meanwhile, based on
The avalanche breakdown voltage threshold value of the nitridation gallio ultraviolet avalanche photodetector of multi-quantum pit structure active area also can reduce.With
The increase of SQW well layer width, the transition energy between electronics and hole will reduce；Along with SQW repetition period number
Purpose increases, and the effective absorption coefficient of SQW and absorption efficiency will increase；Along with the reduction of SQW barrier layer height, light
The tunneling effect of barrier layer can be strengthened by raw carrier, and density of photocurrent also will increase；Along with the increase of Al component, polarization
Effect strengthens, and will reduce with the energy of top of valence band, the transition energy between them at the bottom of the conduction band at electronics and hole place respectively
Also will reduce, therefore the detectivity of nitridation gallio ultraviolet avalanche photodetector based on multi-quantum pit structure active area
To improve.Meanwhile, along with increasing and the increase of Al component of SQW well layer width, due to the impact of polarity effect,
The cutoff wavelength of nitridation gallio ultraviolet avalanche photodetector based on multi-quantum pit structure active area will increase.
Beneficial effect: the nitridation gallio ultraviolet avalanche photodetector that the present invention provides, owing to having the high suction of MQW
Receive the advantages such as coefficient, high horizontal carrier transport factor and strong polarity effect, by MQW
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N and MQW Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N makees respectively
For uptake zone and the multiplication region of nitridation gallio ultraviolet avalanche photodetector, nitridation gallio ultraviolet avalanche optoelectronic both can be improved
The quantum efficiency of detector and responsiveness, freely tune its cutoff wavelength, can effectively reduce again its avalanche breakdown voltage threshold value,
Have great importance for preparing high performance UV photodetector.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
It is illustrated in figure 1 a kind of nitridation gallio ultraviolet avalanche photodetector, including the sapphire set gradually from the bottom to top
Substrate 101, low temperature nucleation layer 102, N-shaped Al content gradually variational AlxInyGa1-x-yN shell 103,
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone 104, Al content gradually variational
Alx3Iny3Ga1-x3-y3N shell 105 and Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region 106,
Wherein Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone 104 He
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region 106 is respectively as nitridation gallio ultraviolet snowslide
The uptake zone of photodetector and multiplication region, uptake zone and multiplication region are by Al content gradually variational Alx3Iny3Ga1-x3-y3N shell 105
Separated.
Described Sapphire Substrate 101 is the C faceted crystal polished or the C faceted crystal with nanometer scale figure.
Described N-shaped Al content gradually variational AlxInyGa1-x-yN shell 103 utilizes Si to be doped, wherein the doping content of Si
More than 1 × 1017cm-3, reach as high as 1 × 1020cm-3；Those skilled in the art can also specifically be arranged as required
N-shaped Al content gradually variational AlxInyGa1-x-yThe doping content of Si in N shell 103.
Described N-shaped Al content gradually variational AlxInyGa1-x-yThe thickness of N shell 103 is between 100～3000nm；This area
Technical staff can also specifically arrange N-shaped Al content gradually variational Al as requiredxInyGa1-x-yThe thickness of N shell 103.
Described N-shaped Al content gradually variational AlxInyGa1-x-yIn N shell 103, Al component is from low to high continuously or uniform gradient line
Property change；Those skilled in the art can also specifically arrange N-shaped Al content gradually variational Al as requiredxInyGa1-x-yN
The gradual manner of Al component in layer 103.
Described Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone 104 necessarily repeats week for having
Phase length and the undoped of quantity or low-doped type multi-quantum pit structure uptake zone, wherein the repetition period of MQW is
1～20, Alx1Iny1Ga1-x1-y1N shell and Alx2Iny2Ga1-x2-y2The thickness of N shell is all between 3～10nm；This area
Technical staff the repetition period quantity of MQW, Al can also as required, be specifically setx1Iny1Ga1-x1-y1N shell
And Alx2Iny2Ga1-x2-y2The thickness etc. of N shell.
Described Al content gradually variational Alx3Iny3Ga1-x3-y3The thickness of N shell 105 is between 10～200nm；The technology of this area
Personnel can also specifically arrange Al content gradually variational Al as requiredx3Iny3Ga1-x3-y3The thickness of N shell 105.
Described Al content gradually variational Alx3Iny3Ga1-x3-y3In N shell 105, Al component is from low to high continuously or uniform gradient line
Property change；Those skilled in the art can also specifically arrange Al content gradually variational Al as requiredx3Iny3Ga1-x3-y3N shell
The gradual manner of Al component in 105.
Described Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region 106 necessarily repeats week for having
Phase length and the undoped of quantity or low-doped type multi-quantum pit structure multiplication region, wherein the repetition period of MQW is
1～20, Alx4Iny4Ga1-x4-y4N shell and Alx5Iny5Ga1-x5-y5The thickness of N shell is all between 3～10nm；This area
Technical staff the repetition period quantity of MQW, Al can also as required, be specifically setx4Iny4Ga1-x4-y4N shell
And Alx5Iny5Ga1-x5-y5The thickness etc. of N shell.
Described Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region 106
Alx4Iny4Ga1-x4-y4N shell and Alx5Iny5Ga1-x5-y5The energy gap of N shell, is all higher than
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2Al in N multi-quantum pit structure uptake zone 104x1Iny1Ga1-x1-y1N shell and
Alx2Iny2Ga1-x2-y2The energy gap of N shell；Described Al content gradually variational Alx3Iny3Ga1-x3-y3The energy gap of N shell 105
Between following two energy gap scopes: Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone
Al in 104x1Iny1Ga1-x1-y1N shell and Alx2Iny2Ga1-x2-y2Energy gap the greater of N shell,
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5Al in N multi-quantum pit structure multiplication region 106x4Iny4Ga1-x4-y4N shell and
Alx5Iny5Ga1-x5-y5The energy gap smaller of N shell.
A kind of concrete design of components scheme is as follows: described N-shaped Al content gradually variational AlxInyGa1-x-yIn N shell 103, under
Mark x, y meet following requirement: 0≤x≤1,0≤y≤1, the value of x, y can adjust according to actual needs；Described
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2In N multi-quantum pit structure uptake zone 104, subscript x1, y1, x2, y2 meet
Following requirement: 0≤x1≤1,0≤y1≤1,0≤x2≤1,0≤y2≤1, the value of x1, y1, x2, y2 can be according to reality
Border needs to adjust；Described Al content gradually variational Alx3Iny3Ga1-x3-y3In N shell 105, subscript x3, the satisfied following requirement of y3:
0≤x3≤1,0≤y3≤1, the value of x3, y3 can adjust as required；Described
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region 106, subscript x4, y4, x5, y5 meet
Following requirement: 0≤x4≤1,0≤y4≤1,0≤x5≤1,0≤y5≤1, the value of x4, y4, x5, y5 can be according to reality
Border needs to adjust.
It must be noted that: the present invention is applicable not only to the nitridation gallio ultraviolet avalanche optoelectronic detection of metal-semiconductor-metal type
Device, is equally applicable for Schottky barrier type nitridation gallio ultraviolet avalanche photodetector.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also
Should be regarded as protection scope of the present invention.
Claims (6)
1. a nitridation gallio ultraviolet avalanche photodetector, it is characterised in that: include the indigo plant set gradually from the bottom to top
Gem substrate (101), low temperature nucleation layer (102), N-shaped Al content gradually variational AlxInyGa1-x-yN shell (103),
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone (104), Al content gradually variational
Alx3Iny3Ga1-x3-y3N shell (105) and Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region
(106), wherein Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone (104) and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region (106) is respectively as nitridation gallio ultraviolet
The uptake zone of avalanche photodetector and multiplication region, uptake zone and multiplication region are by Al content gradually variational Alx3Iny3Ga1-x3-y3N shell
(105) separated；
Described Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone (104) and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region (106) respectively has and necessarily repeats week
Phase length and the undoped of quantity or low-doped type Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure is inhaled
Receive district and undoped or low-doped Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N multi-quantum pit structure multiplication region；
Described Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region (106)
Alx4Iny4Ga1-x4-y4N shell and Alx5Iny5Ga1-x5-y5The energy gap of N shell, is all higher than
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2Al in N multi-quantum pit structure uptake zone (104)x1Iny1Ga1-x1-y1N shell and
Alx2Iny2Ga1-x2-y2The energy gap of N shell；
Described Al content gradually variational Alx3Iny3Ga1-x3-y3The energy gap of N shell (105) is in following two energy gap scopes
Between: Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2Al in N multi-quantum pit structure uptake zone (104)x1Iny1Ga1-x1-y1N
Layer and Alx2Iny2Ga1-x2-y2Energy gap the greater of N shell, Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5N Multiple-quantum
Al in well structure multiplication region (106)x4Iny4Ga1-x4-y4N shell and Alx5Iny5Ga1-x5-y5The energy gap smaller of N shell.
Nitridation gallio ultraviolet avalanche photodetector the most according to claim 1, it is characterised in that: described
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multi-quantum pit structure uptake zone (104) and
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region (106), the repetition week of MQW
Issue is 1～20；Alx1Iny1Ga1-x1-y1N shell, Alx2Iny2Ga1-x2-y2N shell, Alx4Iny4Ga1-x4-y4N shell and
Alx5Iny5Ga1-x5-y5The thickness of N shell is all between 3～10nm.
Nitridation gallio ultraviolet avalanche photodetector the most according to claim 1, it is characterised in that: described
Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2In N multi-quantum pit structure uptake zone (104), subscript x1, y1, x2, y2
Meet and require as follows: 0≤x1≤1,0≤y1≤1,0≤x2≤1,0≤y2≤1；Described
Alx4Iny4Ga1-x4-y4N/Alx5Iny5Ga1-x5-y5In N multi-quantum pit structure multiplication region (106), subscript x4, y4, x5, y5
Meet and require as follows: 0≤x4≤1,0≤y4≤1,0≤x5≤1,0≤y5≤1.
Nitridation gallio ultraviolet avalanche photodetector the most according to claim 1, it is characterised in that: described N-shaped
Al content gradually variational AlxInyGa1-x-yN shell (103) utilizes Si to be doped, and wherein the doping content of Si is 1 × 1017～1 × 1020
cm-3Between.
Nitridation gallio ultraviolet avalanche photodetector the most according to claim 1, it is characterised in that: described N-shaped
Al content gradually variational AlxInyGa1-x-yThe thickness of N shell (103) is between 100～3000nm, and its subscript x, y meets as follows
Require: 0≤x≤1,0≤y≤1；Described Al content gradually variational Alx3Iny3Ga1-x3-y3The thickness of N shell (105) is 10～200
Between nm, its subscript x3, the satisfied following requirement of y3: 0≤x3≤1,0≤y3≤1.
Nitridation gallio ultraviolet avalanche photodetector the most according to claim 1, it is characterised in that: described blue precious
(101) at the bottom of stone lining are the C faceted crystal polished or the C faceted crystal with nanometer scale figure.
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| CN105742387B (en) * | 2016-02-29 | 2017-08-11 | 清华大学 | AlGaN graded component superlattice avalanche photodiodes |
| CN106653896B (en) * | 2017-01-04 | 2018-05-18 | 广东省半导体产业技术研究院 | It is a kind of for InGaN quantum dot light electric explorers of visible light communication and preparation method thereof |
| CN107863403B (en) * | 2017-11-28 | 2023-10-20 | 中国工程物理研究院电子工程研究所 | High-linear gain infrared avalanche photodiode and preparation method thereof |
| CN108305907B (en) * | 2018-01-26 | 2019-10-11 | 中国电子科技集团公司第三十八研究所 | A kind of novel homojunction PIN ultraviolet detector |
| CN111834489B (en) * | 2019-04-17 | 2022-04-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Silicon-based deep ultraviolet avalanche photodiode and preparation method thereof |
| CN111540797A (en) * | 2020-05-13 | 2020-08-14 | 中国科学院半导体研究所 | Middle and far infrared avalanche photoelectric detector |
| US11456577B2 (en) * | 2020-07-28 | 2022-09-27 | Raytheon Company | Monolithic quantum cascade laser (QCL)/avalanche photodiode (APD) infrared transceiver |
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| CN101872798A (en) * | 2010-05-19 | 2010-10-27 | 中国科学院半导体研究所 | Ultraviolet and infrared double-color detector and manufacturing method thereof |
| CN102820367A (en) * | 2012-09-11 | 2012-12-12 | 中山大学 | Gallium nitride (GaN) base avalanche photodetector based on heterostructure absorption and multiplication layer separation |
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