CN104966768B - UV-LED with quantum dot structure - Google Patents

UV-LED with quantum dot structure Download PDF

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Publication number
CN104966768B
CN104966768B CN201510282242.9A CN201510282242A CN104966768B CN 104966768 B CN104966768 B CN 104966768B CN 201510282242 A CN201510282242 A CN 201510282242A CN 104966768 B CN104966768 B CN 104966768B
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algan
layer
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quantum
led
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CN104966768A (en
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张�雄
栾华凯
崔平
崔一平
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Jiangxi Litkang Optical Co ltd
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Southeast University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention discloses an UV-LED with a quantum dot EBL, comprising a sapphire substrate, an A1N nucleating layer, a non-doped u type A1GaN buffer layer, an n type A1GaN layer, an A1xGa1-xN/A1yGa1-yN quantum well active region, a p type A1N/A1GaN quantum dot EBL, a p type A1GaN layer and an ITO conductive layer. An n type ohmic electrode is lead out on the n type A1GaN layer, and a p type ohmic electrode is lead out on the ITO conductive layer. The UV-LED with a quantum dot EBL employs the p type doping layer of self-assembly A1N/ A1GaN quantum dots as the EBL and a hole injection layer, which can effectively inhibit electrons from overflowing out of an active region, enhance the efficiency of hole injection to the active region, and thereby increase the carrier composite efficiency in the active region; in addition, A1N is used as the EBL to replace the A1GaN commonly used in blue LED, which can more effectively reduce UV absorption by the EBL, and increase UV-LED luminous efficiency.

Description

A kind of UV LED with quantum-dot structure
Technical field
The present invention relates to semiconductor photoelectronic device manufacture field, and in particular to one kind has quantum dot electronic barrier layer (EBL) UV LED (UV-LED) of structure.
Background technology
Ultraviolet spectra is the light of 100 to 400nm comprising all wavelengths, and is commonly subdivided into three classes：Long wave ultraviolet (315-400nm, UV-A), ultraviolet B radiation (280-315nm, UV-B) and short wave ultraviolet (100-280nm, UV-C).With can See that wave band is compared, ultraviolet light photons energy is higher, and penetration capacity is stronger, and have powerful lethality for biology.Due to this A little property ultraviolet sources are stored and short in high color rendering index (CRI) solid-state illumination, the detection of biochemistry harmful substance, Water warfare, high density There is great application value in the fields such as wavelength secure communication.Additionally, being led to using solar blind UV (wavelength is less than 280nm) Letter, has the advantages that confidentiality is high, round-the-clock anti-interference and non line-of-sight communication, with great military value.
For preparing ultraviolet device, AlGaN material has its inherent advantages.First, AlxGa1-xN materials are broad stopbands Direct band-gap semicondictor material, by the selection to Al components in ternary compound AlGaN, can adjust AlGaN band-gap energies Positioned at the interval of 6.2~3.4eV, corresponding to 200 to 365nm optical wavelength range.AlxGa1-xN is a kind of strong ionic bond effect Compound, with heat endurance and chemical stability higher.Device based on AlGaN is non-aging, is adapted to high temperature, strong spoke The application penetrated etc. under severe rugged environment.AlGaN base UV-LED small volumes, controllable wavelength, long lifespan, energy consumption are low, no pollution, compare mercury lamp There is significant advantage with the traditional gas ultraviolet source such as xenon lamp, with huge society and economic worth.
However, compared with GaN base blue green light LED, under the conditions of Bulk current injection, under AlGaN base ultraviolet LED luminous efficiencies Cunning is become apparent, and peak luminous wavelength is moved toward shortwave direction.The original for causing peak luminous wavelength to be moved to shortwave length direction Because being because with the increase of Injection Current, built in field is because of photoproduction caused by the piezoelectricity and spontaneous polarization inside active area The shielding action of carrier and be gradually reduced.On the phenomenon that LED luminous efficiencies glide, scientists propose several explanation engines System, for example：Hole injection efficiency is low, and electronics overflows, polarity effect, quantum confined stark effect etc..Wherein, electronics overflows and has Source region and hole injection efficiency is low has been found to be key factor therein.
Hole injection efficiency is overflowed and improves to reduce electronics, as shown in Fig. 2 prior art is generally by GaN base blue green light Last layer of potential barrier of the multi-quantum well active region of LED is substituted for the AlGaN layer of single p-type doping or the AlGaN/ of p-type doping InGaN superlattice structures form electronic barrier layer (EBL), so that stop that electronics overflows active area, while improving hole injection effect Rate, has certain effect to improving the internal quantum efficiency of GaN base blue green light LED and improving luminous power.But for AlGaN bases For ultraviolet LED, because above-mentioned EBL layers of band gap is not big enough, the ultraviolet light that LED sends not only is absorbed by itself, And stop that electronics overflows and the effect of raising hole injection efficiency is not also obvious.Therefore, it is the photism of improvement ultraviolet LED Can, related industry circle is in the urgent need to a kind of new EBL material and structure.
The content of the invention
Goal of the invention：The invention provides a kind of the AlN for including AlGaN quantum-dot structures layers as electronic barrier layer UV LED.The radiation recombination efficiency of active area carrier can be improved, the interior of piezoelectric polarization effect generation is effectively eliminated The influence of electric field is built, so as to reduce electronics spatially be separated with hole wave functions, the luminous efficiency of LED is greatly enhanced.
Technical scheme：To achieve the above object, the present invention uses following technical schemes：
A kind of UV LED with quantum-dot structure, it is characterised in that：Including what is set gradually from the bottom to top Sapphire Substrate 101, AlN nucleating layers 102, undoped AlGaN cushions 103, N-shaped AlGaN layer 104, AlxGa1-xN/AlyGa1- yN multi-quantum well active regions 105, p-type AlN/AlGaN quantum dots electronic barrier layer 106, p-type AlGaN layer 107 and tin indium oxide are led Electric layer (ITO) 108, the N-shaped Ohmic electrode 110 drawn in N-shaped AlGaN layer is drawn on conductive indium-tin oxide layer (ITO) P-type Ohmic electrode 109.
Preferably, the Sapphire Substrate 101 is r surface sapphire substrates.
Preferably, the thickness of the AlN nucleating layers 102 is 20-100nm, and the thickness of undoped AlGaN cushions 103 is 100-800nm, the thickness of N-shaped AlGaN layer 104 is 800-1000nm, AlxGa1-xN/AlyGa1-yN multi-quantum well active regions 105 Periodicity is 5-10, and the thickness of p-type AlN/AlGaN quantum dots electronic barrier layer 106 is 20-80nm, the thickness of p-type AlGaN layer 107 It is 50-200nm to spend.
Preferably, in the AlxGa1-xN/AlyGa1-ySet between N multi-quantum well active regions 105 and p-type AlGaN layer 107 There is p-type AlN/AlGaN quantum dots electronic barrier layer 106；Electronic barrier layer 106 be in AlN with self assembly pattern growth, be in Equally distributed AlGaN quantum dots
Preferably, it is doped using Mg in described p-type AlN/AlGaN quantum dots electronic barrier layer 106, wherein Mg's Doping concentration is between 1 × 1017To 1 × 1020cm-3Between.
Preferably, the AlxGa1-xN/AlyGa1-yIn N multi-quantum well active regions 105, trap and the Al components built meet as follows It is required that：0.20≤x≤0.60,0.30≤y≤0.70, x<y.
Beneficial effect：Due to the two-dimension single layer structure or superlattices knot of the quantum-dot structure compared to prior art of zero dimension Structure has stronger quantum limitation effect to carrier, therefore quantum dot electronic barrier layer can more efficiently suppress electronics and overflow Go out active area；P-type doping is carried out by AlN/AlGaN quantum dots electronic barrier layer, is conducive to being greatly enhanced hole injection Efficiency, so as to improve hole with electronics in the combined efficiency of active area, strengthens the luminous efficiency of LED；Because the AlGaN of zero dimension is measured Son point is bigger compared to the AlGaN individual layers of two dimension or the band gap width of AlGaN/InGaN superlattices, therefore AlN/AlGaN is measured Sub- point-like electron barrier layer is more difficult to absorb the light of ultraviolet band, so as to be conducive to strengthening the light extraction efficiency of ultraviolet LED；Using r Surface sapphire as backing material, can direct growth go out the AlGaN base ultraviolet LED structures of nonpolar a planar orientations, can be effective Due to the band curvature that the built in field that polarity effect causes is caused in ground elimination multi-quantum well active region, electronics and hole are reduced Wave function separation spatially, so as to be conducive to improving the radiation recombination efficiency of electron-hole, significantly increases ultraviolet LED Luminous power and brightness.
Brief description of the drawings
Fig. 1 is the Rotating fields schematic diagram of the UV LED of quantum-dot structure of the present invention.Sapphire Substrate 101, AlN Nucleating layer 102, undoped AlGaN cushions 103, N-shaped AlGaN layer 104, AlxGa1-xN/AlyGa1-yN multi-quantum well active regions 105th, p-type AlN/AlGaN quantum dots electronic barrier layer 106, p-type AlGaN layer 107 and conductive indium-tin oxide layer (ITO) 108, N-shaped Ohmic electrode 110, p-type Ohmic electrode 109.
Fig. 2 is the Rotating fields schematic diagram of ultraviolet LED prepared by prior art.Sapphire Substrate 201, AlN nucleating layers 202, Undoped AlGaN cushions 203, N-shaped AlGaN layer 204, AlxGa1-xN/AlyGa1-yN multi-quantum well active regions 205, p-type AlGaN Barrier layer 206, p-type AlGaN layer 207 and conductive indium-tin oxide layer (ITO) 208, N-shaped Ohmic electrode 210, p-type Ohmic electrode 209。
Specific embodiment
As shown in figure 1, a kind of UV-LED with p-type AlN/AlGaN quantum dot electron barrier layer structures, including by it is lower extremely On set gradually Sapphire Substrate 101, AlN nucleating layers 102, undoped AlGaN cushions 103, N-shaped AlGaN layer 104, AlxGa1-xN/AlyGa1-yN multi-quantum well active regions 105, p-type AlN/AlGaN quantum dots electronic barrier layer 106, p-type AlGaN layer 107 and conductive indium-tin oxide layer (ITO) 108, the N-shaped Ohmic electrode 110 drawn in N-shaped AlGaN layer is conductive in tin indium oxide The p-type Ohmic electrode 109 drawn on layer (ITO).
Preferably, the Sapphire Substrate 101 is r surface sapphire substrates.
Preferably, the thickness of the AlN nucleating layers 102 is 20-100nm, and the thickness of undoped AlGaN cushions 103 is 100-800nm, the thickness of N-shaped AlGaN layer 104 is 800-1000nm, AlxGa1-xN/AlyGa1-yN multi-quantum well active regions 105 Periodicity is 5-10, and the thickness of p-type AlN/AlGaN quantum dots electronic barrier layer 106 is 20-80nm, the thickness of p-type AlGaN layer 107 It is 50-200nm to spend.
Preferably, in the AlxGa1-xN/AlyGa1-ySet between N multi-quantum well active regions 105 and p-type AlGaN layer 107 There is p-type AlN/AlGaN quantum dots electronic barrier layer 106.Electronic barrier layer 106 be in AlN with self assembly pattern growth, be in Equally distributed AlGaN quantum dots
Preferably, it is doped using Mg in described p-type AlN/AlGaN quantum dots electronic barrier layer 106, wherein Mg Doping concentration between 1 × 1017To 1 × 1020cm-3Between.
Preferably, the AlxGa1-xN/AlyGa1-yIn N multi-quantum well active regions 105, trap and the Al components built meet as follows It is required that：0.20≤x≤0.60,0.30≤y≤0.70, x<y.
Because the two-dimension single layer structure or superlattice structure of the quantum-dot structure compared to prior art of zero dimension are to current-carrying Son have stronger quantum limitation effect, therefore quantum dot electronic barrier layer can more efficiently suppress electronics overflow it is active Area.In addition, carrying out p-type doping by AlN/AlGaN quantum dots electronic barrier layer, be conducive to being greatly enhanced hole injection effect Rate, so as to improve hole with electronics in the combined efficiency of active area, strengthens the luminous efficiency of LED.Due to the AlGaN quantum of zero dimension Point is bigger compared to the AlGaN individual layers of two dimension or the band gap width of AlGaN/InGaN superlattices, therefore AlN/AlGaN quantum Point-like electron barrier layer is more difficult to absorb the light of ultraviolet band, so as to be conducive to strengthening the light extraction efficiency of ultraviolet LED.Meanwhile, adopt With r surface sapphires as backing material, can direct growth go out the AlGaN base ultraviolet LED structures of nonpolar a planar orientations, can be with Effectively eliminate the band curvature caused due to the built in field that polarity effect causes in multi-quantum well active region, reduce electronics with Hole wave functions separation spatially, so as to be conducive to improving the radiation recombination efficiency of electron-hole, significantly increases ultraviolet The luminous power of LED and brightness.
Although the present invention is illustrated and has been described with regard to preferred embodiment, it is understood by those skilled in the art that Without departing from scope defined by the claims of the present invention, variations and modifications can be carried out to the present invention.

Claims (5)

1. a kind of UV LED with quantum-dot structure, it is characterised in that：Including the indigo plant for setting gradually from the bottom to top Jewel substrate (101), AlN nucleating layers (102), undoped AlGaN cushions (103), N-shaped AlGaN layer (104), AlxGa1-xN/ AlyGa1-yN multi-quantum well active regions (105), p-type AlN/AlGaN quantum dots electronic barrier layer (106), p-type AlGaN layer (107) With conductive indium-tin oxide layer (ITO) (108), N-shaped Ohmic electrode (110) is drawn in N-shaped AlGaN layer, it is conductive in tin indium oxide P-type Ohmic electrode (109) is drawn on layer (ITO)；In the AlxGa1-xN/AlyGa1-yN multi-quantum well active regions (105) and p-type P-type AlN/AlGaN quantum dots electronic barrier layer (106) is provided between AlGaN layer (107)；Electronic barrier layer (106) be With self assembly pattern growth, the AlGaN quantum dots that are evenly distributed in AlN.
2. the UV LED with quantum-dot structure according to claim 1, it is characterised in that：The sapphire Substrate (101) is r surface sapphire substrates.
3. the UV LED with quantum-dot structure according to claim 1, it is characterised in that：The AlN into The thickness of stratum nucleare (102) is 20-100nm, and the thickness of undoped AlGaN cushions (103) is 100-800nm, N-shaped AlGaN layer (104) thickness is 800-1000nm, AlxGa1-xN/AlyGa1-yThe periodicity of N multi-quantum well active regions (105) is 5-10, p-type The thickness of AlN/AlGaN quantum dots electronic barrier layer (106) is 20-80nm, and the thickness of p-type AlGaN layer (107) is 50- 200nm。
4. the UV LED with quantum-dot structure according to claim 1, it is characterised in that：In AlN/ It is doped using Mg in AlGaN quantum dot layers, the wherein doping concentration of Mg is between 1 × 1017To 1 × 1020cm-3Between.
5. the UV LED with quantum-dot structure according to claim 1, it is characterised in that：The AlxGa1- xN/AlyGa1-yIn N multi-quantum well active regions (105), trap and the Al components built meet following requirement：0.20≤x≤0.60,0.30 ≤ y≤0.70, x<y.
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CN105720147A (en) * 2015-12-30 2016-06-29 晶能光电（江西）有限公司 Epitaxial structure of upside-down mounting near deep ultraviolet light emitting diode, and preparation method
TWI584498B (en) * 2016-05-19 2017-05-21 隆達電子股份有限公司 Light-emitting diode epitaxial structure
CN107689406A (en) * 2016-08-03 2018-02-13 南通同方半导体有限公司 A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer
CN106206887B (en) * 2016-08-29 2018-08-03 扬州中科半导体照明有限公司 A kind of LED epitaxial slice and its production method
CN106206876A (en) * 2016-08-29 2016-12-07 扬州中科半导体照明有限公司 A kind of manufacture method of LED epitaxial slice
CN110459658A (en) * 2018-05-08 2019-11-15 山东浪潮华光光电子股份有限公司 A kind of UV LED chip of p-type GaN layer and preparation method thereof
CN111769187B (en) * 2020-07-31 2023-05-23 佛山紫熙慧众科技有限公司 Ultraviolet LED chip structure
CN112786747A (en) * 2021-02-05 2021-05-11 东莞市中晶半导体科技有限公司 InGaN-based red light LED chip structure
CN113140618B (en) * 2021-03-31 2023-02-10 福建中晶科技有限公司 Sapphire composite substrate and preparation method thereof

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