CN103137822B - Ultraviolet light-emitting diode structure - Google Patents
Ultraviolet light-emitting diode structure Download PDFInfo
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- CN103137822B CN103137822B CN201310057268.4A CN201310057268A CN103137822B CN 103137822 B CN103137822 B CN 103137822B CN 201310057268 A CN201310057268 A CN 201310057268A CN 103137822 B CN103137822 B CN 103137822B
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Abstract
An ultraviolet light-emitting diode structure comprises a substrate, a N-shaped AlGaN layer, a AlGaN quantum well, a P-shaped AlGaN layer, a P-shaped GaN layer, a top electrode, a bottom electrode and a metal layer, wherein the N-shaped AlGaN layer is arranged on the substrate, a platform surface is arranged on one side of the upper surface of the N-shaped AlGaN layer, the AlGaN quantum well is arranged on one side, without the platform surface, of the upper surface of the N-shaped AlGaN layer, the P-shaped AlGaN layer is arranged on the AlGaN quantum well, the P-shaped GaN layer is arranged on the P-shaped AlGaN layer, the top electrode is arranged on the P-shaped GaN layer, the bottom electrode is arranged on the platform surface located on the side of the N-shaped AlGaN layer, and the metal layer is arranged on the back surface of the substrate. According to the ultraviolet light-emitting diode structure, a plasmon technology is adopted to improve luminous efficiency and internal quantum efficiency.
Description
Technical field
The present invention relates to a kind of opto-electronic device, particularly relate to a kind of ultraviolet light-emitting diode (UV-LED) structure.
Background technology
UV-LED is subject to extensive concern because it has huge potential using value in many applications such as excited white light, biochemical detection, sterilizing, environment purification, polymer cure and short distance safety communications.Compared with traditional UV sources mercury lamp, the many merits such as AlGaN base UV-LED has long-life, low-voltage, Wavelength tunable, environmental protection, good directionality, switches rapidly, shatter-proof moisture resistance, light and flexible, along with going deep into of research, the main flow of following new application will be become.
But compared with GaN base blue-ray LED, the luminous power of current UV-LED and efficiency also far can not make us satisfied.Wherein one of reason is the epitaxial growth difficulty of the material of high-quality high Al contents AlGaN, and generally speaking, Al component is higher, and crystal mass is lower, and dislocation density is generally 10
9/ cm
-2-10
10/ cm
-2and even it is higher.At present, metal phasmon technology is successfully used for improving the luminous efficiency of visible LED.Conventional phasmon metal comprises Ag, Au etc., the phasmon energy of these metals is all positioned at visible region, the luminous efficiency improving ultraviolet band LED cannot be used for, therefore, it has been generally acknowledged that phasmon technology is not a kind of effective ways that effectively can improve ultraviolet band particularly deep ultraviolet wave band LED luminous efficiency.But, recently, list of references 1 (GaoN, Huang K, Li J, Li S, Yang X, Kang J.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells Sci.Rep.2012, v.2:816) reports the luminous efficiency adopting Al metallic film can improve UV-LED, experimentally confirm the metal material adopting and there is high body phasmon, effectively can improve the luminous efficiency of UV-LED.Fig. 1 is the device architecture 100 of the UV-LED of prior art, and it comprises Sapphire Substrate 101, AlN resilient coating 102, N-type AlGaN film 103, AlGaN quantum well 104, P type AlGaN film 105, P type GaN film 106, Al film 107, top electrode 108 and hearth electrode 109.Inventor thinks, due to the thickness of P type GaN thicker (100nm), much larger than the coupling distance of metal and quantum well, therefore author by the raising of luminous intensity owing to the raising of metal phasmon to device external quantum efficiency.The photon launched from the active area 104 of device can be transmitted into device exterior, the first from three directions, successively through N-type AlGaNl03, AlN resilient coating 102 and Sapphire Substrate 101, penetrates from bottom device.The second, penetrated from top device by P type GaNl06.3rd, penetrate from the side of device.Improve by the light extraction efficiency of P type GaNl06 from top device injection part light by phasmon technology in document.Wherein, Part I luminescence is the chief component of UV-LED luminescence, and Part II luminescence is the secondary part of UV-LED luminescence.This is because P type GaN film 106 can have strong absorption to the ultraviolet light that AlGaN quantum well 104 is launched.In list of references 1, phasmon technology is adopted to improve the light extraction efficiency of Part II luminescence (namely through the ultraviolet of P type GaN).
Because flip-chip bonded structure has good current distribution characteristic and good heat dissipation characteristics, become the device architecture of a kind of main flow of UV-LED device.In the present invention, we are by a series of UV-LED device architecture based on flip-chip bonded structure of proposition, phasmon technology is adopted to improve the light extraction efficiency of prevailing Part I luminescence (namely successively through N-type AlGaNl03, AlN resilient coating 102 and Sapphire Substrate 101, from bottom device injection).In addition we also will propose UV-LED device architecture, adopt phasmon technology to improve the internal quantum efficiency of AlGaN quantum well 103.
Summary of the invention
The object of the invention is to, a kind of ultraviolet light-emitting diode structure is provided, adopt phasmon technology to improve light extraction efficiency and internal quantum efficiency.
The invention provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate;
One N-type AlGaN layer, it is produced in substrate, and there is a table top side above this N-type AlGaN layer;
One AlGaN quantum well, it is produced on N-type AlGaN layer does not have above table top side;
One P type AlGaN layer, it is produced in AlGaN quantum well;
One P type GaN layer, it is produced in P type AlGaN layer;
One top electrode, it is produced in P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer side;
One metal level, it is produced on the back side of substrate.
The present invention also provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate, this substrate is divided into three sections;
One N-type AlGaN layer, its be produced on be divided into three sections substrate on, be formed with two grooves below this N-type AlGaN layer, there is a table top side above this N-type AlGaN layer;
One AlGaN quantum well, it is produced on N-type AlGaN layer does not have above table top side;
One P type AlGaN layer, it is produced in AlGaN quantum well;
One P type GaN layer, it is produced in P type AlGaN layer;
One top electrode, it is produced in P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer side;
One metal level, it is produced on the back side of N-type AlGaN layer in two grooves being formed below N-type AlGaN layer.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the structural representation of prior art;
Fig. 2 is the structural representation of first embodiment of the invention;
Fig. 3 is the structural representation of second embodiment of the invention;
Fig. 4 is the structural representation of third embodiment of the invention;
Fig. 5 is the structural representation of fourth embodiment of the invention;
Fig. 6 is the structural representation of fifth embodiment of the invention;
Fig. 7 is the structural representation of sixth embodiment of the invention.
Embodiment
First embodiment
Refer to shown in Fig. 2, the invention provides a kind of ultraviolet light-emitting diode structure, comprising:
The AlN resilient coating 22 that one substrate A, this substrate A comprise a Sapphire Substrate 21 and make thereon; Resilient coating 22 thickness shown in it is approximately between 500 nanometer-6 microns, and wherein said resilient coating 22 also can be that other materials is as AlInN
One N-type AlGaN layer 23, it is produced on substrate A, and there is a table top 231 side above this N-type AlGaN layer 23, and wherein the thickness of N-type AlGaN layer 23 is approximately 1-4 microns;
One AlGaN quantum well 24, it is produced on N-type AlGaN layer 23 does not have above table top 231 side, and AlGaN quantum well is approximately 4-10 cycle;
One P type AlGaN layer 25, it is produced in AlGaN quantum well 24, and wherein the thickness of P type AlGaN layer is approximately 20-60 nanometer;
One P type GaN layer 26, it is produced in P type AlGaN layer 25, and wherein the thickness of P type GaN layer is approximately 100-300 nanometer;
One top electrode 27, it is produced in P type GaN layer 26, and wherein top electrode 27 material can be Ni/Au etc., and thickness is approximately 10100 nanometers;
One hearth electrode 28, it is produced on the table top 231 of N-type AlGaN layer 23 side, and wherein hearth electrode 28 material can be Ti/Al/Ti/Au etc., and thickness is approximately 150-1000 nanometer;
One metal level 29, it is produced on the back side of substrate A, and described metal level 29 is bonding jumper or metallic particles.
Second embodiment
Refer to shown in Fig. 3, the present embodiment is substantially identical with the first embodiment, and difference is, described this substrate A is a resilient coating 22, and in addition, the Sapphire Substrate for growing AIN resilient coating 22 is removed by means such as laser lift-offs.
3rd embodiment
Refer to shown in Fig. 4, the present embodiment is substantially identical with the first embodiment, and difference is, described metal level 29 is produced in P type AlGaN layer 25, and metal level, close to quantum well, is conducive to improving internal quantum efficiency.
4th embodiment
Refer to shown in Fig. 5, the present embodiment is substantially identical with the first embodiment, and difference is, described metal level 29 is produced in N-type AlGaN layer 23, and metal level, close to quantum well, is conducive to improving internal quantum efficiency.
5th embodiment
Refer to shown in Fig. 6, the invention provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate A, this substrate A is divided into three sections, the AlN resilient coating 22 that this substrate A substrate A comprises a Sapphire Substrate 21 and makes thereon;
One N-type AlGaN layer 23, it is produced on and is divided on the substrate A of three sections, is formed with two grooves 232 below this N-type AlGaN layer 23, and there is a table top 231 side above this N-type AlGaN layer 23;
One AlGaN quantum well 24, it is produced on N-type AlGaN layer 23 does not have above table top 231 side;
One P type AlGaN layer 25, it is produced in AlGaN quantum well 24;
One P type GaN layer 26, it is produced in P type AlGaN layer 25;
One top electrode 27, it is produced in P type GaN layer 26;
One hearth electrode 28, it is produced on the table top 231 of N-type AlGaN layer 23 side;
One metal level 29, it is produced on the back side of N-type AlGaN layer 23 in two grooves 232 being formed below N-type AlGaN layer 23, and described metal level 29 is bonding jumper or metallic particles.
6th embodiment
Refer to shown in Fig. 7, this present embodiment is substantially identical with the 5th embodiment, and difference is, this substrate A is a resilient coating 22, and in addition, the Sapphire Substrate for growing AIN resilient coating is removed by means such as laser lift-offs.
The foregoing is only better possible embodiments of the present invention, non-ly therefore namely limit to the scope of the claims of the present invention, the equivalent structure change that every utilization specification of the present invention and accompanying drawing content are done, all reason is with being contained in right of the present invention.
Claims (4)
1. a ultraviolet light-emitting diode structure, comprising:
One substrate, this substrate is divided into three sections;
One N-type AlGaN layer, its be produced on be divided into three sections substrate on, be formed with two grooves below this N-type AlGaN layer, there is a table top side above this N-type AlGaN layer;
One AlGaN quantum well, it is produced on N-type AlGaN layer does not have above table top side;
One P type AlGaN layer, it is produced in AlGaN quantum well;
One P type GaN layer, it is produced in P type AlGaN layer;
One top electrode, it is produced in P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer side;
One metal level, it is produced on the back side of N-type AlGaN layer in two grooves being formed below N-type AlGaN layer.
2. ultraviolet light-emitting diode structure according to claim 1, wherein this substrate is a resilient coating.
3. ultraviolet light-emitting diode structure according to claim 1, wherein this substrate comprises a Sapphire Substrate and making AlN resilient coating thereon.
4. ultraviolet light-emitting diode structure according to claim 1, wherein said metal level is bonding jumper or metallic particles.
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| CN201310057268.4A CN103137822B (en) | 2013-02-22 | 2013-02-22 | Ultraviolet light-emitting diode structure |
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| CN201310057268.4A CN103137822B (en) | 2013-02-22 | 2013-02-22 | Ultraviolet light-emitting diode structure |
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| CN103137822B true CN103137822B (en) | 2015-07-15 |
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| CN106058002B (en) * | 2016-06-15 | 2018-11-09 | 青岛杰生电气有限公司 | A kind of ultra-violet light-emitting device |
| CN110993754B (en) * | 2019-12-04 | 2022-06-17 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
| CN111710765B (en) * | 2020-06-28 | 2021-05-18 | 中国科学院半导体研究所 | Method for improving light extraction efficiency of LED flip chip |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683506A (en) * | 2011-03-10 | 2012-09-19 | 中国科学院物理研究所 | Nano-structure layer for gallium-nitride-based (GaN-based) light emitting diode (LED) epitaxial slice and preparation method thereof |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683506A (en) * | 2011-03-10 | 2012-09-19 | 中国科学院物理研究所 | Nano-structure layer for gallium-nitride-based (GaN-based) light emitting diode (LED) epitaxial slice and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells;Na Gao;《scientific reports》;20121112;第1-6页 * |
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Effective date of registration: 20210303 Address after: 046011 Zhangze new industrial park, Changzhi high tech Zone, Changzhi City, Shanxi Province Patentee after: SHANXI ZHONGKE ADVANCED ULTRAVIOLET OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences |