CN103346233A - LED inverted installation structure for improving luminance - Google Patents
LED inverted installation structure for improving luminance Download PDFInfo
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- CN103346233A CN103346233A CN2013102882721A CN201310288272A CN103346233A CN 103346233 A CN103346233 A CN 103346233A CN 2013102882721 A CN2013102882721 A CN 2013102882721A CN 201310288272 A CN201310288272 A CN 201310288272A CN 103346233 A CN103346233 A CN 103346233A
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- optical waveguide
- waveguide layer
- led inverted
- sapphire substrate
- led
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Abstract
The invention discloses an LED inverted installation structure for improving luminance. The LED inverted installation structure comprises a sapphire substrate. A light guiding layer is additionally arranged on the surface of the sapphire substrate in a bonding mode. The light guiding layer can be made of sapphire or other materials. Graphs can be formed on the light guiding layer for further improving high extraction efficiency. The LED inverted installation structure can be used for leading out light emitted by a quantum well layer more effectively, thereby improving the luminance.
Description
Technical field
The present invention relates to the semiconductor component structure design field, in particular, relate to a kind of LED inverted structure that improves luminosity.
Background technology
Existing semiconductor LED flip chip(upside-down mounting) processing procedure is subject to material substrate material and sapphire synusia thickness, can't more effective luminous more effective derivation with quantum well layer.
Summary of the invention
The present invention provides a kind of LED inverted structure that improves luminosity for solving the problems of the technologies described above, and this structural design is flexible, can effectively improve luminous efficiency.
For achieving the above object, the technical solution adopted in the present invention is as follows:
A kind of LED inverted structure that improves luminosity comprises Sapphire Substrate, in the bonding mode, increases by an optical waveguide layer on described Sapphire Substrate surface.
Described optical waveguide layer is sapphire.
Described bonded layer at Sapphire Substrate surface bond optical waveguide layer is oxide or the non-oxidized substance of indium-containing metal.
Can be made on the described optical waveguide layer and be conducive to improve the multiple figure that light takes out efficient.
The thickness of described optical waveguide layer is set according to required different lighting angles.
The beneficial effect that the present invention brings is as follows:
1 improves luminous efficiency.
2 solve existing inverted structure because of GaN surface (front) processing procedure after, because of the existing processing procedure pattern in surface, after the wafer upside-down mounting, can't carry out the processing procedure as PSS to the sapphire face after the upside-down mounting.
3 can be according to required different lighting angles, the optical waveguide layer of bonding different-thickness.
4 optical waveguide layers can be the material that is different from Sapphire Substrate, increase the elasticity in the design.
5, the optical waveguide layer of bonding can carry out processing procedure separately, is beneficial to make to improve the figure that light takes out efficient.
Description of drawings
Fig. 1 is existing upside-down mounting processing procedure grainiess figure;
Fig. 2 is the structural representation of upside-down mounting processing procedure crystal grain disclosed in this invention;
Fig. 3 is the structural representation of upside-down mounting processing procedure crystal grain embodiment one disclosed in this invention;
Fig. 4 is the structural representation of upside-down mounting processing procedure crystal grain embodiment two disclosed in this invention.
Embodiment
Below by the drawings and specific embodiments method for designing provided by the present invention is done a detailed description.
Fig. 1 is existing upside-down mounting processing procedure grainiess figure, is p-GaN layer 1, quantum well layer MQW 2, n-GaN layer 3, Sapphire Substrate layer 4 from the bottom up successively among the figure.This structure can't be with the luminous effective derivation of quantum well layer.
Fig. 2 is the structural representation of upside-down mounting processing procedure crystal grain disclosed in this invention, this structure on the Sapphire Substrate layer 4 of existing structure shown in Figure 1 bonding one optical waveguide layer 5.Bonded layer 6 is to the high material of luminescent device wave band penetrance, can be the oxide or the non-oxidized substance that contain indium (In) metal, but is not limited thereto.Optical waveguide layer 5 is sapphire or other material.The thickness of optical waveguide layer 5 can arrange flexibly according to required different lighting angles.Optical waveguide layer 5 can carry out processing procedure separately, can produce on the optical waveguide layer 5 to be conducive to improve the figure that light takes out efficient.
The structure of the embodiment of the invention one shown in Figure 3 is to make PSS surface 7 at optical waveguide layer 5.The structure of the embodiment of the invention two shown in Figure 4 is to help to promote the figure 8 that light takes out efficient at the another kind that optical waveguide layer 5 is made.
Above-mentioned embodiment just is used for explanation the present invention, can not be used for limiting protection scope of the present invention.For the distortion under the thought guidance of technical solution of the present invention and conversion, all should be attributed in the protection range of the present invention.
Claims (5)
1. a LED inverted structure that improves luminosity comprises Sapphire Substrate, it is characterized in that, in the bonding mode, increases by an optical waveguide layer on described Sapphire Substrate surface.
2. the LED inverted structure of raising luminosity according to claim 1 is characterized in that, described optical waveguide layer is sapphire.
3. the LED inverted structure of raising luminosity according to claim 1 is characterized in that, described bonded layer at Sapphire Substrate surface bond optical waveguide layer is oxide or the non-oxidized substance of indium-containing metal.
4. the LED inverted structure of raising luminosity according to claim 1 is characterized in that, can be made on the described optical waveguide layer to be conducive to improve the multiple figure that light takes out efficient.
5. the LED inverted structure of raising luminosity according to claim 1 is characterized in that, the thickness of described optical waveguide layer is set according to required different lighting angles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102882721A CN103346233A (en) | 2013-07-10 | 2013-07-10 | LED inverted installation structure for improving luminance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102882721A CN103346233A (en) | 2013-07-10 | 2013-07-10 | LED inverted installation structure for improving luminance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103346233A true CN103346233A (en) | 2013-10-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2013102882721A Pending CN103346233A (en) | 2013-07-10 | 2013-07-10 | LED inverted installation structure for improving luminance |
Country Status (1)
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| CN (1) | CN103346233A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10014271B2 (en) * | 2015-11-20 | 2018-07-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of manufacturing the same |
| CN114824044A (en) * | 2022-04-27 | 2022-07-29 | 东莞市中麒光电技术有限公司 | Display module, Mini LED chip and preparation method thereof |
Citations (5)
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| CN1426603A (en) * | 2000-04-26 | 2003-06-25 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting semiconductor element and method for producing same |
| CN1461498A (en) * | 2001-04-23 | 2003-12-10 | 松下电工株式会社 | Ligth emitting device comprising LED chip |
| CN1885579A (en) * | 2006-06-23 | 2006-12-27 | 北京工业大学 | Light-emitting diode structure based on GaN/sapphire transparent substrate and preparation method |
| CN101257068A (en) * | 2007-03-02 | 2008-09-03 | 甘志银 | Method for enhancing light extraction efficiency of high power light-emitting diode |
| CN102270733A (en) * | 2010-06-07 | 2011-12-07 | 株式会社东芝 | Optical semiconductor device and method for manufacturing same |
-
2013
- 2013-07-10 CN CN2013102882721A patent/CN103346233A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1426603A (en) * | 2000-04-26 | 2003-06-25 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting semiconductor element and method for producing same |
| EP2270875A1 (en) * | 2000-04-26 | 2011-01-05 | OSRAM Opto Semiconductors GmbH | Sermiconductor light emitting device and method of manufacturing the same |
| CN1461498A (en) * | 2001-04-23 | 2003-12-10 | 松下电工株式会社 | Ligth emitting device comprising LED chip |
| CN1885579A (en) * | 2006-06-23 | 2006-12-27 | 北京工业大学 | Light-emitting diode structure based on GaN/sapphire transparent substrate and preparation method |
| CN101257068A (en) * | 2007-03-02 | 2008-09-03 | 甘志银 | Method for enhancing light extraction efficiency of high power light-emitting diode |
| CN102270733A (en) * | 2010-06-07 | 2011-12-07 | 株式会社东芝 | Optical semiconductor device and method for manufacturing same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10014271B2 (en) * | 2015-11-20 | 2018-07-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of manufacturing the same |
| CN114824044A (en) * | 2022-04-27 | 2022-07-29 | 东莞市中麒光电技术有限公司 | Display module, Mini LED chip and preparation method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131009 |