CN111834489B - Silicon-based deep ultraviolet avalanche photodiode and preparation method thereof - Google Patents

Silicon-based deep ultraviolet avalanche photodiode and preparation method thereof Download PDF

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CN111834489B
CN111834489B CN201910302110.6A CN201910302110A CN111834489B CN 111834489 B CN111834489 B CN 111834489B CN 201910302110 A CN201910302110 A CN 201910302110A CN 111834489 B CN111834489 B CN 111834489B
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赵宇坤
陆书龙
边历峰
邱海兵
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN

Abstract

The invention discloses a silicon-based deep ultraviolet avalanche photodiode and a preparation method thereof, wherein the preparation method comprises the following steps: s1, providing a Si substrate; s2, sequentially stacking and growing an AlN buffer layer and first Al on the Si substrate1‑mGamN nano column and second Al1‑xGaxN nanopillar, and third Al1‑zGazN nano-columns, wherein m is more than or equal to 0 and less than or equal to 1, x is more than or equal to 0 and less than 0.8, and z is more than or equal to 0 and less than 0.8; according to actual needs, the fourth Al can also be sequentially grown in a stacking way after the step S21‑aGaaThe N nanometer column and a fifth AlN nanometer column, wherein a is more than or equal to 0 and less than 0.8. According to the preparation method of the avalanche diode, on one hand, the AlN nano-column is utilized to obviously weaken the interference of light ultraviolet light and improve the crystal quality, so that the accuracy and the sensitivity of a detector can be improved; on the other hand, the silicon substrate can simplify the manufacturing process flow of the device, is easy for integration processing in the later period and is very favorable for reducing the cost.

Description

Silicon-based deep ultraviolet avalanche photodiode and preparation method thereof
Technical Field
The invention belongs to the field of photodiodes, and particularly relates to a silicon-based deep ultraviolet avalanche photodiode and a preparation method thereof.
Background
Direct irradiation with deep ultraviolet (UVC, 200-. Its penetration is weak, it is almost completely absorbed by the ozone layer during its passage through the earth's atmosphere, reaching the earth's surface at negligible intensity, a band also commonly referred to as the "solar-blind" band. The deep ultraviolet band has no background interference of sunlight, and the deep ultraviolet photodiode can be used as a detector to be applied to the fields of missile detection, fire detection, radiation detection, secret communication and the like, so that the application market is huge.
In practical application, the intensity of deep ultraviolet light is usually very weak, and meanwhile, the performance and sensitivity of an ultraviolet detector are higher due to the objective requirements of high precision fields such as national defense and aerospace, so that the preparation of a deep ultraviolet photodiode with high sensitivity and high accuracy is very urgent.
At present, a photomultiplier and a silicon-based ultraviolet phototube are two ultraviolet detection phototubes which are commonly used, but the photomultiplier and the silicon-based ultraviolet phototube are not only required to be accompanied by an expensive and complicated filtering system, but also have low sensitivity. The third generation wide bandgap semiconductor is used as an ideal material for preparing the ultraviolet detector, can remove the optical filter, is convenient to carry, is beneficial to the integration of the detector, and makes the manufacture of the detector with high sensitivity, quick response and low noise possible.
The semiconductor material commonly used for preparing the deep ultraviolet detector is Al1-xGaxN (commonly known as AlGaN), diamond, MgZnO, Ga2O3. Diamond and difficult to realize controllable doping, and has high application cost, Ga2O3The forbidden band of (A) is difficult to regulate. MgZnO can only be detected under the background of strong light and low noise, and has low responsivity, so that the high-performance MgZnO deep ultraviolet detector is difficult to prepare. Al (Al)1-xGaxThe N material has the advantages of high temperature resistance, stable physical and chemical properties, strong radiation resistance and the like, has wide and continuously adjustable band gap, can cover the ultraviolet band of 200 nm-355 nm in wavelength, and is an ideal material for preparing the deep ultraviolet photodiode at present. But at present Al1-xGaxN deep ultraviolet detectors have not yet taken up the major market, due to the high Al component Al1-xGaxN (includingAlN) is difficult to meet the requirements of the application in terms of epitaxial quality and doping level. Meanwhile, compared with other substrates, the cost for preparing the large-size single crystal Si substrate is the lowest, and the preparation cost can be greatly reduced. However, the lattice mismatch and the thermal mismatch coefficient of Si and GaN are larger, so high-quality Al with high Al content is obtained on the Si substrate1-xGaxThe N material becomes a bigger challenge and is a difficult problem to be solved at present.
Semiconductor-based photodiodes are roughly classified into metal-semiconductor-metal (MSM) structures, schottky structures, photoconductive structures, p-n/p-i-n structures, Avalanche Photodiodes (APDs), and the like in terms of device structures. The APD is an ideal choice for a sensitive photoelectric sensor due to its advantages of high quantum efficiency, low power consumption, strong photosensitivity, large working spectrum range, small volume, etc. On the other hand, Al1-xGaxThe N nano column (one-dimensional) can effectively limit captured carriers, obviously enhance the quantum limiting effect, simultaneously relieve the stress problem caused by lattice mismatch and thermal mismatch, reduce the defect density, improve the crystal quality and further effectively improve the internal quantum efficiency.
At present, a layer of AlN thin film is epitaxially grown on a GaN thin film taking sapphire as a substrate and is prepared into a non-avalanche type photodiode (ACS Nano 2018, 12 and 425). However, AlN and GaN have large lattice mismatch and are easy to generate defects, and according to the search of the Web of Science platform, no public report is provided for preparing a one-dimensional deep ultraviolet avalanche diode on a silicon substrate.
Disclosure of Invention
In order to solve the problems in the prior art, the invention mainly provides the silicon-based deep ultraviolet avalanche photodiode and the preparation method thereof.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
the embodiment of the invention provides a preparation method of a silicon-based deep ultraviolet avalanche photodiode, which comprises the following steps of manufacturing and forming an epitaxial structure:
s1, providing a Si substrate;
s2, sequentially stacking and growing an AlN buffer layer and first Al on the Si substrate1-mGamN nano column and second Al1-xGaxN nanopillar and third Al1-zGazN nano-pillars; wherein m is more than or equal to 0 and less than or equal to 1, x is more than or equal to 0 and less than 0.8, and z is more than or equal to 0 and less than 0.8.
Further, the first Al1-mGamThe N nano column is a single AlN layer or GaN layer, or the first Al1-mGamThe N nano-column comprises a GaN layer and an AlN layer which are alternately arranged in sequence, or the first All-mGamAl with N nano-column as single layer1-mGamN layers; preferably, m is a fixed value, or the value of m is greater or smaller than that of the first Al1-mGamThe growth direction of the N nano-pillars gradually changes from large to small.
Further, the second Al1-xGaxAl with N nano-column as single layer1-xGaxN layer, or, the second Al1- xGaxThe N nano column comprises AlN spacing layers and Al which are alternately arranged in sequence1-xGaxN layer, wherein the second Al1-xGaxThe bottom layer and the top layer of the N nano column are AlN spacing layers.
Further, the second Al1-xGaxN nano-pillar and third Al1-zGazThe content of the Al component in the N nano column is uniformly distributed or gradually distributed.
Further, the first Al1-mGamA Bragg reflector structure is arranged in the N nano column and comprises GaN layers and Al layers which are alternately arranged1-nGanN layers, or the Bragg reflector structure comprises AlN layers and Al which are alternately arranged1-nGanN is greater than or equal to 0 and less than or equal to 1.
Further, the AlN buffer layer has a thickness of 1nm to 20 nm; the first Al1-mGamThe height of the N nano column is 100 nm-2000 nm, and the height of the Bragg reflector structure is 50 nm-500 nm; what is needed isThe second Al1-xGaxThe height of the N nano column is 20 nm-300 nm, and the third Al1-zGazThe height of the N nano column is 30 nm-500 nm; the first Al1- mGamN nano column and second Al1-xGaxN nanopillar and third Al1-zGazThe diameter of any one of the N nano-pillars does not exceed 300 nm.
Further, the preparation method also comprises the following steps: s3 in third Al1-zGazSequentially forming fourth Al on the N nano-pillars1-aGaaThe N nanometer column and a fifth AlN nanometer column, wherein a is more than or equal to 0 and less than 0.8.
Further, the fourth Al1-aGaaThe height of the N nano column is 20 nm-300 nm, and the height of the fifth A1N nano column is 30 nm-500 nm.
Further, the fourth Al1-aGaaAl with N nano-column as single layer1-aGaaN layer, or, the fourth Al1- aGaaThe N nano column comprises AlN spacing layers and Al which are alternately arranged in sequence1-aGaaN layer, wherein the fourth Al1-aGaaThe first layer and the last layer of the N nano column are AlN spacing layers; preferably, the fourth Al1-aGaaThe content of the A1 component in the N nano-column is uniformly distributed or gradually distributed.
Further, the preparation method comprises the following steps: the AlN buffer layer and the first Al are formed by molecular beam epitaxy or vapor deposition1-mGamN nano column and second Al1-xGaxN nano-column, third Al1-zGazN nanopillar, fourth Al1- aGaaAn N nano-pillar and a fifth AlN nano-pillar.
Further, the Si substrate is an n-type highly doped substrate, first Al1-mGamThe N nano column is an N-type highly doped nano column, and the third Al is1-zGazThe N nano column and the fifth AlN nano column are p-type highly doped nano columns, and the second Al is1- xGaxN nanopillar and fourth Al1-aGaaThe N nano column is an N-type or p-type low-doped nano column.
Further, the Si substrate and the first Al1-mGamThe N-type doping concentration of the N nano column is 1 multiplied by 1017/cm-3～1×1022/cm-3The third Al1-zGazThe p-type doping concentration of the N nano column and the fifth AlN nano column is 1 multiplied by 1016/cm-3～1×1021/cm-3(ii) a The second Al1-xGaxN nanopillar and fourth Al1-aGaaThe N-type or p-type doping concentration of the N nano column is 1 multiplied by 1010/cm-3～1×1020/cm-3。
Preferably, the concentration of high doping in the same type of doped nano-column is higher than that of low doping in the same epitaxial structure.
Further, the preparation method also comprises the following steps: and manufacturing an electrode matched with the epitaxial structure.
The embodiment of the invention also provides the silicon-based deep ultraviolet avalanche photodiode manufactured by the preparation method.
Compared with the prior art, the invention has at least the following beneficial effects:
(1) compared with the traditional method, the preparation method of the silicon-based deep ultraviolet avalanche photodiode provided by the invention has the advantages that the layer (AlN nano-column) of the device which is in front of light is transparent to the light ultraviolet (320-400nm), and the preparation method has low cost and strong practicability. The traditional device adopts materials such as GaN (light ultraviolet and deep ultraviolet can be absorbed) and the like, is easily interfered by the light ultraviolet, reduces the accuracy of the avalanche diode, and on the other hand, Ga2O3The material can not absorb all deep ultraviolet light, and the energy band is difficult to adjust; the AlN nano-columns absorb the deep ultraviolet light very little, namely are transparent to the deep ultraviolet light, so that the transmittance can be greatly improved, and the absorption of the absorption layer to the deep ultraviolet light is enhanced. The preparation method is favorable for improving the selectivity of the deep ultraviolet avalanche diode to ultraviolet light without additionally adding an optical filter, is favorable for improving the accuracy and reducing the response time, and can also improve the selectivity of the deep ultraviolet avalanche diode to ultraviolet lightThe cost is reduced;
(2) compared with the traditional film structure, the AlGaN nano-column in the preparation method is more beneficial to releasing the epitaxial stress and improving the crystal quality, thereby improving the performance of the avalanche diode;
(3) the preparation method provided by the invention has low cost: the large-size Si substrate is low in manufacturing cost, vertical chip preparation is facilitated, compared with a horizontal structure, the process flow can be simplified, and later-stage integrated processing is facilitated; the method can be used for intensively treating the bottleneck problem restricting the development of the deep ultraviolet avalanche diode in the epitaxial growth stage, and has strong practicability.
Drawings
The above and other features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic view of an epitaxial structure of a Si-based p-i-n type deep ultraviolet avalanche diode in example 1 of the present invention;
FIG. 2 is a schematic view of an epitaxial structure of a Si-based p-i-n deep ultraviolet avalanche diode with a graded layer in example 2 of the present invention;
FIG. 3 is a schematic view of an epitaxial structure of a Si-based p-i-p-i-n deep ultraviolet avalanche diode in example 3 of this invention;
fig. 4 is a schematic flow chart of a process for preparing a Si-based avalanche diode in example 7 of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated. In the drawings, the shapes and sizes of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or similar elements.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various structures, these structures should not be limited by these terms, which are only used to distinguish one structure from another.
The invention provides a brand-new preparation method of a silicon-based deep ultraviolet avalanche photodiode based on the problems of poor crystal quality, high noise and the like in the deep ultraviolet avalanche diode growth method in the prior art. The above-mentioned production method of the present invention will be described below by way of specific examples, but the following examples are merely specific examples of the present invention and are not intended to limit the entirety thereof.
Example 1
Firstly, a piece of n-type Si substrate is taken, and the surface of the Si substrate is respectively cleaned for 5min by HF acid, acetone and ethanol solution.
Then, the Si substrate was placed in a Molecular Beam Epitaxy (MBE) growth chamber for epitaxial growth.
The method specifically comprises the following steps:
in the first step, an AlN buffer layer with a thickness of about 2nm was grown on Si, as shown in fig. 1.
And secondly, growing a layer of highly doped (Si is used as a doping source) n-type AlN nano-column 10 with the height of about 300nm on the AlN buffer layer to form a first AlN nano-column.
Thirdly, growing a layer of unintentionally doped (namely low-doped) Al with the thickness of 80nm on the first AlN nano-column0.5Ga0.5An N nano column 11, and a layer of highly doped (Mg is a doping source) p-type AlN nano column 12 with the thickness of 100nm is grown; that is, the first Al in the present embodiment1-mGamM in the N nano column is 0, and the second Al1-xGaxX in the N nano column is 0.5, and the third Al1-zGazThe value of the N nano column z is 0.
Thereby, the growth of the epitaxial structure of the deep ultraviolet avalanche diode is completed.
Example 2
Firstly, taking an n-type Si substrate, and respectively cleaning the surface of the Si substrate for 10min by using HF acid, acetone and ethanol solution.
Then, the Si substrate was placed in an MBE growth chamber for epitaxial growth.
The method specifically comprises the following steps:
in the first step, an AlN buffer layer with a thickness of about 3nm was grown on Si, as shown in fig. 2.
Secondly, a layer of high Si doped n-type GaN nano column (the doping concentration is 5 multiplied by 10) with the height of about 100nm grows on the AlN buffer layer19/cm-3)20, then growing a layer of high Si doped Al with a height of 40nm1-mGamN nano column (doping concentration is 2X 10)19/cm-3)21 in which the Al component content gradually increased in the growth direction, followed by the growth of a layer of highly Si-doped n-type AlN nanopillars (doping concentration 3X 10) having a height of about 50nm19/cm-3)22。
Thirdly, on the nano-pillars grown in the second step, unintentionally doped, i.e. low doped AlN layers (doping concentration < 2 × 10) are alternately grown17/cm-3)23 with Al0.45Ga0.55N layer (doping concentration < 2X 10)17/cm-3)24, thickness of 5nm and 10nm, respectively, Al0.45Ga0.55The N layer is 3 layers in total, and the AlN layer is 4 layers in total.
Fourthly, a layer of p-type A1N nano-column with 120nm thickness and high Mg doping (doping concentration is 5 multiplied by 10)18/cm-3) 25; that is, the first Al in the present embodiment1-mGamThe N nano-column comprises three layers, wherein m in the first layer of GaN is 1, and the second layer of Al1-mGamThe value of m in N is gradually changed from 1 to 0, and the third layer of Al1-mGamM in N is 0, and second Al1- xGaxThe value of x in the N nano column is 0.55, and the third Al1-zGazAnd the value of z in the N nano column is 0.
Thereby, the growth of the epitaxial structure of the deep ultraviolet avalanche diode is completed.
Example 3
Firstly, a piece of n-type Si substrate is taken, and the surface of the Si substrate is respectively cleaned for 15min by acetone and ethanol solution.
Then, the Si substrate was placed in an MBE growth chamber for epitaxial growth.
The method specifically comprises the following steps:
in the first step, an AlN buffer layer with a thickness of about 2nm was grown on Si, as shown in fig. 3.
Secondly, a Si-doped n-type GaN nanorod 30 with the height of about 150nm is grown on the AlN buffer layer, and then a Si-doped Al layer with the height of 200nm is grown0.4Ga0.6N nano-pillars 31.
Thirdly, growing a layer of unintentionally doped (i.e. low doped) Al with the thickness of 120nm0.55Ga0.45N nano-pillars 32.
Fourthly, a layer of Mg-doped p-type Al with the thickness of 60nm is grown again0.5Ga0.5N nano-pillars 33.
A fifth step of growing a layer of unintentionally doped Al with a thickness of 100nm on the previously grown nano-pillars0.4Ga0.6An N nano-column 34, and then growing a layer of Mg-doped p-type AlN nano-column 35 with the thickness of 140 nm; that is, the first Al in the present embodiment1-mGamThe N nano-column comprises two layers, wherein m in the first layer of GaN takes a value of 1, and the second layer of Al1-mGamM in N is 0.6, second Al1-xGaxThe value of x in the N nano column is 0.45, and the third Al1-zGazThe value of N nano column z is 0.5, and the fourth Al1-aGaaThe value of the N nano column a is 0.6.
Thereby, the growth of the epitaxial structure of the deep ultraviolet avalanche diode is completed.
Example 4
The growth process and conditions of the epitaxial structure of the deep ultraviolet avalanche diode in this example are substantially the same as those of example 1, except that the first Al in this example is1-mGamA Bragg reflector structure is arranged in the N nano column and comprises GaN layers and Al layers which are alternately arranged1-nGanN layers, where N in this embodiment takes the value of 0.
Example 5
Depth in the present embodimentThe growth process and conditions of the epitaxial structure of the ultraviolet avalanche diode are substantially the same as those of example 1, except that the first Al in this example is1-mGamA Bragg reflector structure is arranged in the N nano column and comprises AlN layers and Al layers which are arranged alternately1-nGanN in this embodiment takes the value of 0.5.
Example 6
The growth process and conditions of the epitaxial structure of the deep ultraviolet avalanche diode in this example are substantially the same as those of example 3, except that the first Al in this example isl-mGamA Bragg reflector structure is arranged in the N nano column and comprises AlN layers and Al layers which are arranged alternately1-nGanN, N in this example is 1, and second Al1- xGaxThe value of x in the N nano column is 0, and the fourth Al1-aGaaThe value of a in the N nano column is 0.
Example 7
Firstly, a piece of n-type Si substrate is taken, and the surface of the Si substrate is respectively cleaned for 15min by acetone and ethanol solution.
Then, the Si substrate was placed in an MBE growth chamber for epitaxial growth.
The method specifically comprises the following steps:
in a first step, an AlN buffer layer with a thickness of about 4nm is grown on Si, as shown in fig. 4 a.
And secondly, growing a layer of highly doped n-type AlN nano-column 40 taking Si with the height of about 500nm as a doping source on the AlN buffer layer.
Thirdly, growing a layer of unintentionally doped (i.e. low doped) Al with the thickness of 150nm03Ga07An N nano-column 41, and a layer of Mg-doped p-type AlN nano-column 42 with the thickness of 150nm is grown; that is, the first Al in the present embodiment1-mGamM in the N nano column is 0, and the second All-xGaxX in the N nano column is 0.7, and the third Al1-zGazThe value of the N nano column z is 0.
A fourth step of vapor deposition (CVD)Method for evaporating SiO with 200nm2Layer 43 and the SiO overlying the upper surface of the nanopillars (here Mg-doped p-type AlN nanopillars 42) by means of plasma etching (ICP)2Removal exposes the upper surface of the nanopillars, see fig. 4 b.
In the fifth step, a layer of graphene 44 is covered to serve as a current spreading layer, see fig. 4 c.
In a sixth step, the electrode 45 having the selective pattern is prepared by a photolithography process, see fig. 4 d.
Thus, the process preparation of the deep ultraviolet avalanche diode device is completed.
Based on the deep ultraviolet avalanche diode devices fabricated from the epitaxial structures in examples 1 to 6 and the deep ultraviolet avalanche diode device fabricated in example 7, dark current at a bias voltage of 40V was expected to be < 1 × 10-8A/cm2Defect density < 108/cm2The inhibition ratio of UVC/UVA is more than 1000, and the response time is less than 0.01s, wherein UVA represents ultraviolet rays in a wavelength band of 320-400 nm; the test methods may be in a manner known to those skilled in the art and will not be described in detail herein.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims (8)

1. A preparation method of a silicon-based deep ultraviolet avalanche photodiode comprises the steps of manufacturing and forming an epitaxial structure, and is characterized in that the step of manufacturing and forming the epitaxial structure comprises the following steps:
s1, providing a Si substrate, wherein the Si substrate is an n-type highly doped substrate;
s2, sequentially growing an AlN buffer layer and the first Al of the n-type highly-doped nano-column in a laminated manner on the Si substrate1-mGamN nano-pillar, the first Al1-mGamThe N nano column is a single AlN layer or GaN layer, or the first Al1-mGamThe N nano-column comprises a GaN layer and an AlN layer which are alternately arranged in sequence, or the first Al1-mGamAl with N nano-column as single layer1-mGamN layers; m is a fixed value, or the magnitude of the value of m is along the first Al1-mGamThe growth direction of the N nano-pillars gradually changes from large to small; and, the first Al1-mGamA Bragg reflector structure is arranged in the N nano column and comprises GaN layers and Al layers which are alternately arranged1-nGanN layers, or the Bragg reflector structure comprises AlN layers and Al which are alternately arranged1- nGanN, wherein N is more than or equal to 0 and less than or equal to 1;
s3, in the first Al1-mGamN-type or p-type low-doped second Al is grown on the N nano-column in a laminated manner1-xGaxN nano-pillar, the second Al1-xGaxAl with N nano-column as single layer1-xGaxN layer, or, the second Al1-xGaxThe N nano column comprises AlN spacing layers and Al which are alternately arranged in sequence1-xGaxN layer, wherein the second Al1-xGaxThe bottom layer and the top layer of the N nano column are AlN spacing layers;
s4, in the second Al1-xGaxP-type highly doped third Al stacked on N nano-column1-zGazN nano-pillars; wherein m is more than or equal to 0 and less than or equal to 1, x is more than or equal to 0 and less than 0.8, and z is more than or equal to 0 and less than 0.8;
s5 in third Al1-zGazSequentially forming N-type or p-type low-doped fourth Al on the N nano-pillars1-aGaaAn N nano column and a p-type highly doped fifth AlN nano column, wherein a is more than or equal to 0 and less than 0.8, and the fourth Al1-aGaaAl with N nano-column as single layer1-aGaaN layer, or, the fourth Al1-aGaaThe N nano column comprises AlN spacing layers and Al which are alternately arranged in sequence1-aGaaN layer, wherein the fourth Al1-aGaaThe first layer and the last layer of the N nano column are AlN spacing layers; the fourth Al1-aGaaAl group in N nano columnThe content of the components is uniformly distributed or gradually distributed;
and in the same epitaxial structure, the concentration of high doping in the same type of doped nano-column is higher than that of low doping.
2. The method of claim 1, wherein: the second Al1-xGaxN nano-pillar and third Al1- zGazThe content of the Al component in the N nano column is uniformly distributed or gradually distributed.
3. The production method according to claim 1, wherein the AlN buffer layer has a thickness of 1 to 20 nm; the first Al1-mGamThe height of the N nano column is 100 nm-2000 nm, and the height of the Bragg reflector structure is 50 nm-500 nm; the second Al1-xGaxThe height of the N nano column is 20 nm-300 nm; the third Al1-zGazThe height of the N nano column is 30 nm-500 nm; the first Al1-mGamN nano column and second Al1-xGaxN nanopillar and third Al1- zGazThe diameter of any one of the N nano-pillars does not exceed 300 nm.
4. The method of claim 1, wherein: the fourth Al1-aGaaThe height of the N nano column is 20 nm-300 nm, and the height of the fifth AlN nano column is 30 nm-500 nm.
5. The production method according to claim 1, characterized by comprising: the AlN buffer layer and the first Al are formed by molecular beam epitaxy or vapor deposition1-mGamN nano column and second Al1-xGaxN nano-column, third Al1-zGazN nanopillar, fourth Al1-aGaaAn N nano-pillar and a fifth AlN nano-pillar.
6. The method according to claim 1The method is characterized in that: the Si substrate and the first Al1-mGamThe N-type doping concentration of the N nano column is 1 multiplied by 1017/cm-3 ~ 1×1022/cm-3The third Al1-zGazThe p-type doping concentration of the N nano column and the fifth AlN nano column is 1 multiplied by 1016/cm-3 ~ 1×1021/cm-3(ii) a The second Al1-xGaxN nanopillar and fourth Al1-aGaaThe N-type or p-type doping concentration of the N nano column is 1 multiplied by 1010/cm-3 ~ 1×1020/cm-3。
7. The method of claim 1, further comprising: and manufacturing an electrode matched with the epitaxial structure.
8. The silicon-based deep ultraviolet avalanche photodiode formed by the manufacturing method as set forth in any one of claims 1 to 7.
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