CN102231387A - Electrode for realizing ohmic contact with n type ZnS quasi-one-dimensional nanometer material and preparation method thereof - Google Patents
Electrode for realizing ohmic contact with n type ZnS quasi-one-dimensional nanometer material and preparation method thereof Download PDFInfo
- Publication number
- CN102231387A CN102231387A CN2011101762193A CN201110176219A CN102231387A CN 102231387 A CN102231387 A CN 102231387A CN 2011101762193 A CN2011101762193 A CN 2011101762193A CN 201110176219 A CN201110176219 A CN 201110176219A CN 102231387 A CN102231387 A CN 102231387A
- Authority
- CN
- China
- Prior art keywords
- electrode
- quasi
- nanometer material
- preparation
- dimensional nanometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses an electrode for realizing an ohmic contact with an n type ZnS quasi-one-dimensional nanometer material and a preparation method thereof. The electrode provided in the invention is characterized in that the electrode is AZO or ITO transparent electrodes and is directly formed on the n type ZnS quasi-one-dimensional nanometer material. The electrode is prepared by a magnetron sputtering method or a pulsed laser deposition method and the prepared electrode is processed by a post-annealing treatment, so that the ohmic contact between the electrode and the ZnS quasi-one-dimensional nanometer material can be further improved. According to the invention, the problem of the direct ohmic contact between the electrode and the n type ZnS quasi-one-dimensional nanometer material can be solved. The electrode provided in the invention can be used for preparation and research of relevant devices of the n type ZnS quasi-one-dimensional nanometer material. Moreover, the preparation method of the electrode is simple, reliable and is easy to operate.
Description
Technical field
The invention belongs to technical field of semiconductor device, be specifically related to electrode with n type ZnS material ohmic contact and preparation method thereof.
Background technology
Monodimension nanometer material is because its novel physical, chemistry and biology characteristic and the potential use in nano-device become the research focus of current nanometer technology.And monodimension nanometer material is a large amount of, low-cost and synthetic simply and effectively and assembling be no matter from the angle of basic research, still from performance and application point of view special important meaning is arranged all.Semiconductor nano material has potential using value at aspects such as optics, electricity, magnetics, nano-electrons, is one of research focus of nanometer material science in recent years.Zinc sulphide ZnS is one of most important II-VI family direct gap semiconductor, the ZnS energy gap is 3.7eV, have piezoelectricity, infrared transparent and good luminous property, in various fields such as electron display device, ultraviolet detector, solar cell, infrared window and laser and catalysis, be widely used.One dimension ZnS nano material has the crystal mass of monocrystalline, and possesses many excellent light, the electrical characteristics that cause because of quantum confined effect and dimensional effect, is one of ideal material system of constructing by nano photoelectric device of new generation.But, the ZnS nano material has low electron affinity and high surface density of states, the surperficial fermi level pinning that causes thus, make metal/semiconductor always have very high Schottky barrier at the interface, thereby be difficult to form good Ohmic contact, the problem of ohmic contact has seriously restricted the application of ZnS nano material in nano photoelectronic devices.Because of intrinsic ZnS nano material has high insulating properties, realize that it is the important channel of constructing high-performance ZnS nano-device that n or p type mix, and realize that electrode and n type ZnS nano material ohmic contact are one of most important links of fabricate devices.ITO and AZO transparency electrode are owing to its high transmissivity, conductivity, comparatively improve preparation technology and steady performance and be widely used in electronic device and the opto-electronic device, as display, solar cell etc., but, so far about realizing not having relevant report with n type ZnS quasi-one-dimensional nanometer material ohmic contact with ITO or AZO transparency electrode.
Summary of the invention
The present invention is that purpose provides a kind of the realization and electrode of n type ZnS quasi-one-dimensional nanometer material ohmic contact and preparation method thereof, in the hope of realizing good Ohmic contact between electrode and the n type ZnS quasi-one-dimensional nanometer material, the contact resistance between electrode and the n type ZnS quasi-one-dimensional nanometer material is significantly reduced.
The present invention adopts following technical scheme for the technical solution problem:
The present invention's realization is that described electrode is AZO or the ito transparent electrode that directly forms on n type ZnS quasi-one-dimensional nanometer material with the characteristics of the electrode of n type ZnS quasi-one-dimensional nanometer material ohmic contact.
The present invention realizes that the characteristics with the preparation method of the electrode of n type ZnS quasi-one-dimensional nanometer material ohmic contact are at first to adopt magnetron sputtering method or pulsed laser deposition to prepare AZO or ito transparent electrode on n type ZnS quasi-one-dimensional nanometer material, carries out annealing in process and finishes preparation for being formed on AZO on the n type ZnS quasi-one-dimensional nanometer material or ito transparent electrode then.
Preparation method's of the present invention characteristics also are:
The process conditions of described magnetron sputtering method are: air pressure is that 0.1～1Pa, sputtering power are that 40W～100W, Ar gas flow are 10～50sccm.
The process conditions of described pulsed laser deposition are: laser power is that 40～500mJ, optical maser wavelength are that 248nm, pulse frequency are that 1～20Hz, air pressure are 0.1～10
-5Pa.
The annealing process condition of carrying out annealing in process for AZO or ito transparent electrode is: vacuum degree is 10
-2～10
-5Pa, N
2Under the atmosphere or be under the Ar atmosphere, annealing temperature is 100 ℃～600 ℃, annealing time 5～30 minutes.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, the present invention adopts AZO transparency electrode or ito transparent electrode, and preparation technology is simple, and mature and reliable is easy to control, can be directly and n type ZnS quasi-one-dimensional nanometer material form ohmic contact preferably.
2, electrode of the present invention can make the contact resistance between electrode and the n type ZnS quasi-one-dimensional nanometer material reduce by two magnitudes after annealed processing.
3, the present invention adopts AZO or ito transparent electrode, for n type ZnS quasi-one-dimensional nanometer material is laid a good foundation in using in transparent devices.
4, the present invention is with the method for AZO or ito transparent electrode realization and n type ZnS quasi-one-dimensional nanometer material ohmic contact, solved the key in application difficult problem of present puzzlement ZnS quasi-one-dimensional nanometer material in nano electron device and opto-electronic device, for n type ZnS quasi-one-dimensional nanometer material is laid a good foundation in semiconductor device, opto-electronic device design with in using.
Description of drawings
Fig. 1 is Ga doped ZnS nano belt device SEM figure among the embodiment 1;
Fig. 2 is a Ga doped ZnS nano belt volt-ampere characteristic among the embodiment 1;
Fig. 3 is a Ga doped ZnS nanometer band transport property curve among the embodiment 1, (a) output characteristic curve wherein, (b) transfer characteristic curve;
Fig. 4 is a Cl doped ZnS nano wire volt-ampere characteristic among the embodiment 2;
Fig. 5 receives line line electronic transport characteristic curve, wherein (a) output characteristic curve, (b) transfer characteristic curve for Cl doped ZnS among the embodiment 2;
Fig. 6 is an Al doped ZnS nano belt volt-ampere characteristic among the embodiment 3;
Fig. 7 is an Al doped ZnS nanometer band transport property curve among the embodiment 3, (a) output characteristic curve wherein, (b) transfer characteristic curve;
Fig. 8 is an In doped ZnS nano belt volt-ampere characteristic among the embodiment 4;
Fig. 9 is an In doped ZnS nanometer band transport property curve among the embodiment 4, (a) output characteristic curve wherein, (b) transfer characteristic curve;
Embodiment
Concrete enforcement is to contact with n type ZnS quasi-one-dimensional nanometer material with AZO or ito transparent electrode, AZO or ito transparent electrode are to be prepared from by magnetically controlled sputter method or pulse laser sediment method, and the electrode of preparation can be handled through after annealing the ohmic contact effect is further improved.The process conditions of magnetically controlled sputter method are air pressure 0.1～1Pa, and sputtering power is 40W～100W, and the Ar gas flow is 10～50sccm; The process conditions of pulse laser sediment method are laser power 40～500mJ, and optical maser wavelength is 248nm, and pulse frequency is 1～20Hz, air pressure 0.1～10
-5Pa.AZO or ito transparent electrode annealing process condition are: vacuum degree is 10
-2～10
-5Pa or N
2Under the atmosphere or under the Ar atmosphere, annealing temperature is 100 ℃～600 ℃, annealing time 5～30 minutes.
Embodiment 1
The doping content synthetic by chemical gaseous phase depositing process is 1.0 * 10
16Cm
-3Ga doped ZnS nano belt be dispersed in and have the thick SiO of 300nm
2P type heavy doping Si sheet on, be the device bottom gate on the p type heavy doping Si sheet, evenly the spin coating photoresist makes two electrode electrode patterns by lithography, Fig. 1 schemes for device SEM.
Adopt pulse laser sediment method, condition is that laser energy is 40mJ, and optical maser wavelength is 248nm, and pulse frequency is 20Hz, and vacuum degree is 1 * 10
-5Pa, the thick AZO film of deposition 60nm on the electrode pattern that makes by lithography.For further reducing the contact resistance between AZO electrode and Ga doped ZnS nano belt, the AZO electrode is 10 in vacuum degree
-4Pa anneals down, and annealing temperature is 100 ℃, and the time is 5 minutes.The Ga doped ZnS nanometer band transport property that utilized KEITHLEY 4200 characteristic of semiconductor test system and tests.Fig. 2 is the I-V curve of Ga doped ZnS nano belt, finds that the I-V curve is linear, illustrates that AZO electrode and Ga doped ZnS nano belt form good Ohmic contact, and the electrode after annealing has further reduced the contact resistance between AZO electrode and Ga doped ZnS nano belt.Fig. 3 is a Ga doped ZnS nano belt Ga doped ZnS nanometer band transport property curve, and curve can illustrate that Ga doped ZnS nano belt conduction type is the n type.
The doping content synthetic by chemical gaseous phase depositing process is 2.0 * 10
17Cm
-3Cl doped ZnS nano wire be dispersed in and have the thick SiO of 300nm
2P type heavy doping Si sheet on, be the device bottom gate on the p type heavy doping Si sheet, evenly the spin coating photoresist makes two electrode electrode patterns by lithography.
Adopt pulse laser sediment method, condition is that laser energy is 400mJ, and optical maser wavelength is 248nm, and pulse frequency is 1Hz, and vacuum degree is 1 * 10
-2Pa, the thick AZO film of deposition 60nm on the electrode pattern that makes by lithography.For further reducing the contact resistance between AZO electrode and Cl doped ZnS nano wire, the AZO electrode is 10 in vacuum degree
-2Pa anneals down, and annealing temperature is 600 ℃, and the time is 30 minutes.The Cl doped ZnS nano wire electronic transport characteristic of having utilized KEITHLEY 4200 characteristic of semiconductor test system and tests.Fig. 4 is the I-V curve of Cl doped ZnS nano wire, finds that the I-V curve is linear, illustrates that AZO electrode and Cl doped ZnS nano wire form good Ohmic contact, and the electrode after annealing has further reduced the contact resistance between AZO electrode and Cl doped ZnS nano wire.Fig. 5 is based on Cl doped ZnS nanometer electronic transport characteristic curve, and curve can illustrate that C1 doped ZnS nano wire conduction type is the n type.
Embodiment 3
The doping content synthetic by chemical gaseous phase depositing process is 6.0 * 10
15Cm
-3Al doped ZnS nano belt be dispersed in and have the thick SiO of 300nm
2P type heavy doping Si sheet on, be the device bottom gate on the p type heavy doping Si sheet, evenly the spin coating photoresist makes two electrode electrode patterns by lithography.
Adopt the magnetically controlled sputter method method, condition is air pressure 1Pa, and sputtering power is 40W, and the Ar gas flow is 10sccm, the thick AZO film of deposition 60nm on the electrode pattern that makes by lithography.For further reducing the contact resistance between AZO electrode and Al doped ZnS nano belt, the AZO electrode is at N
2Atmosphere protection is annealed down, and annealing temperature is 300 ℃, and the time is 20 minutes.The Al doped ZnS nanometer band transport property that utilized KEITHLEY 4200 characteristic of semiconductor test system and tests.Fig. 6 is the I-V curve of Al doped ZnS nano belt, finds that the I-V curve is linear, illustrates that AZO electrode and Al doped ZnS nano belt form good Ohmic contact, and the electrode after annealing has further reduced the contact resistance between AZO electrode and Al doped ZnS nano belt.Fig. 7 is based on Al doped ZnS nanometer band transport property curve, and curve can illustrate that Al doped ZnS nano belt conduction type is the n type.
The doping content synthetic by chemical gaseous phase depositing process is 1.8 * 10
16Cm
-3In doped ZnS nano belt be dispersed in and have the thick SiO of 300nm
2P type heavy doping Si sheet on, be the device bottom gate on the p type heavy doping Si sheet, evenly the spin coating photoresist makes two electrode electrode patterns by lithography.
Adopt the magnetically controlled sputter method method, condition is air pressure 0.1Pa, and sputtering power is 100W, and the Ar gas flow is 10sccm, the thick AZO film of deposition 60nm on the electrode pattern that makes by lithography.For further reducing the contact resistance between AZO electrode and In doped ZnS nano belt, AZO electrode A r atmosphere protection is annealed down, and annealing temperature is 200 ℃, and the time is 15 minutes.Utilize KEITHLEY 4200 characteristic of semiconductor test system and test In doped ZnS nanometer band transport properties.Fig. 8 is the I-V curve of In doped ZnS nano belt, finds that the I-V curve is linear, illustrates that AZO electrode and In doped ZnS nano belt form good Ohmic contact, and the electrode after annealing has further reduced the contact resistance between AZO electrode and In doped ZnS nano belt.Fig. 9 is based on In doped ZnS nanometer band transport property curve, and curve can illustrate that In doped ZnS nano belt conduction type is the n type.
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, substitute the AZO electrode, obtained identical effect among above each embodiment with the ITO electrode.
Claims (5)
1. the electrode of realization and n type ZnS quasi-one-dimensional nanometer material ohmic contact is characterized in that described electrode is AZO or the ito transparent electrode that directly forms on n type ZnS quasi-one-dimensional nanometer material.
2. the preparation method of the electrode of described realization of claim 1 and n type ZnS quasi-one-dimensional nanometer material ohmic contact, it is characterized in that at first adopting magnetron sputtering method or pulsed laser deposition on n type ZnS quasi-one-dimensional nanometer material, to prepare AZO or ito transparent electrode, carry out annealing in process and finish preparation for being formed on AZO on the n type ZnS quasi-one-dimensional nanometer material or ito transparent electrode then.
3. preparation method according to claim 2 is characterized in that the process conditions of described magnetron sputtering method are:
Air pressure is that 0.1～1Pa, sputtering power are that 40W～100W, Ar gas flow are 10～50sccm.
4. preparation method according to claim 2 is characterized in that the process conditions of described pulsed laser deposition are:
Laser power is that 40～500mJ, optical maser wavelength are that 248nm, pulse frequency are that 1～20Hz, air pressure are 0.1～10
-5Pa.
5. preparation method according to claim 2, it is characterized in that the annealing process condition of carrying out annealing in process for AZO or ito transparent electrode is: vacuum degree is 10
-2～10
-5Pa, N
2Under the atmosphere or be under the Ar atmosphere, annealing temperature is 100 ℃～600 ℃, annealing time 5～30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101762193A CN102231387A (en) | 2011-06-28 | 2011-06-28 | Electrode for realizing ohmic contact with n type ZnS quasi-one-dimensional nanometer material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101762193A CN102231387A (en) | 2011-06-28 | 2011-06-28 | Electrode for realizing ohmic contact with n type ZnS quasi-one-dimensional nanometer material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102231387A true CN102231387A (en) | 2011-11-02 |
Family
ID=44843940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101762193A Pending CN102231387A (en) | 2011-06-28 | 2011-06-28 | Electrode for realizing ohmic contact with n type ZnS quasi-one-dimensional nanometer material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102231387A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583223A (en) * | 2012-03-02 | 2012-07-18 | 合肥工业大学 | Preparation method of nano solar battery based on CuS quasi one-dimensional nanostructure |
| CN102610672A (en) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | Heterojunction type photoelectric detector and manufacturing method thereof |
| CN103730195A (en) * | 2013-12-13 | 2014-04-16 | 中国科学院宁波材料技术与工程研究所 | Composite transparent conducting thin film of copper-nanowire-based multi-layer structure and manufacturing method of composite transparent conducting thin film of copper-nanowire-based multi-layer structure |
| CN106373669A (en) * | 2016-10-10 | 2017-02-01 | 福建农林大学 | Preparation method for cellulose-based aluminum-doped zinc oxide transparent conductive material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362483B1 (en) * | 1998-12-29 | 2002-03-26 | The Hong Kong University Of Science & Technology | Visible-blind UV detectors |
| CN201060051Y (en) * | 2007-04-30 | 2008-05-14 | 西安交通大学 | Ultraviolet light conductance seeker of ZnO MSM structure |
| CN101447522A (en) * | 2008-07-22 | 2009-06-03 | 湘潭大学 | Photoresistance based on II-VI group semiconductor nano-belt thin film and preparation method thereof |
| CN101553062A (en) * | 2009-05-12 | 2009-10-07 | 北京交通大学 | Mixed excitation nano-film luminescent screen |
| CN101985735A (en) * | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | Alumina target material and transparent conductive film prepared thereby |
-
2011
- 2011-06-28 CN CN2011101762193A patent/CN102231387A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362483B1 (en) * | 1998-12-29 | 2002-03-26 | The Hong Kong University Of Science & Technology | Visible-blind UV detectors |
| CN201060051Y (en) * | 2007-04-30 | 2008-05-14 | 西安交通大学 | Ultraviolet light conductance seeker of ZnO MSM structure |
| CN101447522A (en) * | 2008-07-22 | 2009-06-03 | 湘潭大学 | Photoresistance based on II-VI group semiconductor nano-belt thin film and preparation method thereof |
| CN101553062A (en) * | 2009-05-12 | 2009-10-07 | 北京交通大学 | Mixed excitation nano-film luminescent screen |
| CN101985735A (en) * | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | Alumina target material and transparent conductive film prepared thereby |
Non-Patent Citations (1)
| Title |
|---|
| YONGQIANG YU ETC.: "《High-gain bisible-blind UV photodetectors based on chlorine-doped n-type ZnS nanoribbons with tunable optoelectronic properties》", 《JOURNAL OF MATERIALS CHEMISTRY》, vol. 21, 17 June 2011 (2011-06-17), pages 1 - 5 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583223A (en) * | 2012-03-02 | 2012-07-18 | 合肥工业大学 | Preparation method of nano solar battery based on CuS quasi one-dimensional nanostructure |
| CN102583223B (en) * | 2012-03-02 | 2015-01-07 | 合肥工业大学 | Preparation method of nano solar battery based on CuS quasi one-dimensional nanostructure |
| CN102610672A (en) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | Heterojunction type photoelectric detector and manufacturing method thereof |
| CN103730195A (en) * | 2013-12-13 | 2014-04-16 | 中国科学院宁波材料技术与工程研究所 | Composite transparent conducting thin film of copper-nanowire-based multi-layer structure and manufacturing method of composite transparent conducting thin film of copper-nanowire-based multi-layer structure |
| CN103730195B (en) * | 2013-12-13 | 2016-03-30 | 中国科学院宁波材料技术与工程研究所 | Compound transparent electricity conductive film of a kind of copper nano-wire Quito Rotating fields and preparation method thereof |
| CN106373669A (en) * | 2016-10-10 | 2017-02-01 | 福建农林大学 | Preparation method for cellulose-based aluminum-doped zinc oxide transparent conductive material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111653644A (en) | Silicon-based heterojunction solar cell and preparation method thereof | |
| KR101127491B1 (en) | Method for manufacturing substrate of photovoltaic cell | |
| CN102522434A (en) | Copper-indium-gallium-selenium film photovoltaic cell device and preparation method thereof | |
| Long et al. | Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode | |
| Zhao et al. | Stoichiometry control of sputtered zinc oxide films by adjusting Ar/O2 gas ratios as electron transport layers for efficient planar perovskite solar cells | |
| US20100200059A1 (en) | Dual-side light-absorbing thin film solar cell | |
| Zhao et al. | Electroluminescence of the p-ZnO: As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer | |
| KR101300560B1 (en) | ZnO-based conductor | |
| KR101012847B1 (en) | manufacturing method of compound sollar cell using ??? nanorod and the compound sollar cell | |
| CN102231387A (en) | Electrode for realizing ohmic contact with n type ZnS quasi-one-dimensional nanometer material and preparation method thereof | |
| Chen et al. | Combustion synthesis of electrospun LaInO nanofiber for high-performance field-effect transistors | |
| Lee et al. | Characteristics of Al-doped ZnO films annealed at various temperatures for InGaZnO-based thin-film transistors | |
| CN107394044A (en) | A kind of perovskite solar cell of high-performance conductive electrode and electron transfer layer and preparation method thereof | |
| CN113981370A (en) | Deep ultraviolet transparent high-conductivity Si-doped Ga2O3Film and preparation method thereof | |
| Wang et al. | Optical and Electrical Properties of the Different Magnetron Sputter Power 300° C Deposited Ga2O3‐ZnO Thin Films and Applications in p‐i‐n α‐Si: H Thin‐Film Solar Cells | |
| Kim et al. | Effect of hydrogen on mechanical stability of amorphous In–Sn–O thin films for flexible electronics | |
| KR20100096642A (en) | Manufacturing method of compound sollar cell using window layer by atmospheric plasma treatment and the compound sollar cell | |
| CN203026510U (en) | Ohmic contact electrode and semiconductor element comprising same | |
| Ke et al. | Pulsed laser deposition of amorphous InGaZnO4 as an electron transport layer for perovskite solar cells | |
| CN103413827B (en) | A kind of CdTe/PbTe heterojunction boundary two-dimensional electron gas structure | |
| Chen et al. | Annealing Effects of Sputtered Cu2O Nanocolumns on ZnO‐Coated Glass Substrate for Solar Cell Applications | |
| Li et al. | Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application | |
| TWI483405B (en) | Photovoltaic cell and method of manufacturing a photovoltaic cell | |
| KR20110107934A (en) | Carbon nanotube/zno transparent solar cell and preparation method thereof | |
| Saikumar et al. | Work function estimation of gallium-doped zinc oxide using transparent gate electrode MOSFET |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111102 |