CN105789047B - A kind of preparation method of enhanced AlGaN/GaN high electron mobility transistor - Google Patents
A kind of preparation method of enhanced AlGaN/GaN high electron mobility transistor Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000005036 potential barrier Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 6
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 4
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- 208000027418 Wounds and injury Diseases 0.000 description 2
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
The present invention provides a kind of enhanced AlGaN/GaN high electron mobility transistor preparation methods, method successively grows GaN or AlN nucleating layer, GaN buffer layer, GaN channel layer, AlN insert layer, AlGaN potential barrier and InGaN cap layers on a substrate, and source electrode and drain electrode is made in AlGaN potential barrier, and grid is made in InGaN cap layers, obtain enhanced AlGaN/GaN high electron mobility transistor.InGaN cap layers in the present invention contain a large amount of vacancy In, since a large amount of presence in the vacancy In can adsorb electronics, electronegativity is presented in entire cap layers, in this way raise barrier layer conduction level, to exhaust the two-dimensional electron gas of channel, it realizes the enhanced of device, and avoids the difficult point of traditional p-type cap layers high concentration p doping relatively difficult to achieve, enhance the operability of device preparation.
Description
Technical field
The invention belongs to semiconductor field more particularly to a kind of enhanced AlGaN/GaN high electron mobility transistor
(HEMT) preparation method.
Background technique
GaN already becomes research hotspot instantly as third generation semiconductor material with wide forbidden band.GaN has forbidden bandwidth
Greatly, the features such as critical breakdown electric field is high, electronics saturation drift velocity is high, prepare high-power, high frequency, high speed, small size partly
There is unique advantage in terms of conductor power device.
Spontaneous polarization effect and piezoelectricity pole using AlGaN/GaN as the GaN base power electronic devices of representative, due to its own
Change effect, a large amount of two-dimensional electron gas can be generated at heterojunction boundary, concentration is up to 1013cm-2 magnitude, electron mobility
2000cm2/ Vs or more.These properties cause AlGaN/GaN base power device to have, and current density is big, conducting resistance is low, function
The advantages such as rate density is big.This allows it to have in field of power electronics such as battery management, wind-power electricity generation, solar battery, electric cars
Broad application prospect.
Since AlGaN/GaN power electronic devices is usually depletion device, this allows it to increase function in circuit design
The complexity of consumption and circuit design.Simultaneously in power electronics applications, since its normally opened characteristic leads to the peace of circuit work
Full property substantially reduces, and due to lacking self-protection mechanism in the case where grid failure, leads to that there are serious security risks.Based on
Upper defect, enhancement type high electron mobility device have become the emphasis and hot spot of research at present.
For the research of enhancement device, the recessed grid of etching, fluorine ion injection, growth p-GaN or p- are generallyd use at present
The methods of AlGaN cap layers exhaust the two-dimensional electron gas of grid lower channels.But these methods in technique and device performance all
There is biggish defect, such as recessed gate etching process is difficult to control accurately, while the etching injury introduced is larger, will lead to electric current and collapses
It collapses phenomenon, deteriorates the reliability of device；Fluorine ion injection also brings along series of stable problem；Growing P-type cap layers are due to certainly
The factors such as compensating effect and acceptor impurity activation energy height are difficult to realize highly doped so that the doping efficiency of acceptor doping atom is low
The p-type cap layers of concentration are grown.
Summary of the invention
(1) technical problems to be solved
The object of the present invention is to provide a kind of enhanced AlGaN/GaN high electron mobility transistor preparation method,
Enhanced AlGaN/GaN high electron mobility transistor is realized, and method is with technique is controllable, etching injury is small, device
The high advantage of part reliability of technology.
(2) technical solution
The present invention provides a kind of preparation method of enhanced AlGaN/GaN high electron mobility transistor, comprising:
S1 grows a GaN or AlN low temperature nucleation layer on a substrate；
S2 grows a GaN buffer layer on GaN or AlN nucleating layer；
S3 grows a GaN channel layer on GaN buffer layer；
S4 grows an AlN insert layer on GaN channel layer；
S5 grows an AlGaN potential barrier in AlN insert layer；
S6, in the one InGaN cap layers of surface portion region growing of AlGaN potential barrier, wherein InGaN cap layers contain In sky
Position；
S7 does not grow the region of the InGaN cap layers on AlGaN potential barrier surface, makes source electrode and drain electrode respectively, and
Grid is made in the InGaN cap layers.
(3) beneficial effect
InGaN cap layers in the present invention contain a large amount of vacancy In, since a large amount of presence in the vacancy In can adsorb electronics, entirely
Electronegativity is presented in cap layers, in this way raises barrier layer conduction level, to exhaust the two-dimensional electron gas of channel, realizes the increasing of device
Strong type, and the difficult point of traditional p-type cap layers high concentration p doping relatively difficult to achieve is avoided, enhance the operability of device preparation.
Detailed description of the invention
Fig. 1 is enhanced AlGaN produced by the present invention/GaN high electron mobility transistor schematic diagram.
Fig. 2 is the flow chart of enhanced AlGaN provided by the invention/GaN high electron mobility transistor preparation method.
Specific embodiment
The present invention provides a kind of preparation method of enhanced AlGaN/GaN high electron mobility transistor, and method successively exists
GaN or AlN nucleating layer, GaN buffer layer, GaN channel layer, AlN insert layer, AlGaN potential barrier are grown on one substrate and contain In
The InGaN cap layers in vacancy, and source electrode and drain electrode is made in AlGaN potential barrier, and make grid in InGaN cap layers, it obtains
Enhanced AlGaN/GaN high electron mobility transistor.InGaN cap layers in the present invention contain a large amount of vacancy In, due to In
A large amount of presence in vacancy can adsorb electronics, and entire cap layers are presented electronegativity, in this way raise barrier layer conduction level, to exhaust
The two-dimensional electron gas of channel realizes the enhanced of device, and avoids the high concentration p doping relatively difficult to achieve of traditional p-type cap layers
Difficult point enhances the operability of device preparation.
Fig. 2 is the flow chart of enhanced AlGaN provided by the invention/GaN high electron mobility transistor preparation method,
As shown in Fig. 2, method includes:
S1 grows a GaN or AlN low temperature nucleation layer on a substrate；
S2 grows a GaN buffer layer on GaN or AlN nucleating layer；
S3 grows a GaN channel layer on GaN buffer layer；
S4 grows an AlN insert layer on GaN channel layer；
S5 grows an AlGaN potential barrier in AlN insert layer；
S6, in the one InGaN cap layers of surface portion region growing of AlGaN potential barrier, wherein InGaN cap layers contain In sky
Position；
S7 does not grow the region of InGaN cap layers on AlGaN potential barrier surface, makes source electrode and drain electrode respectively, and
Grid is made in InGaN cap layers；
S8, depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au in source electrode and drain electrode, and anneal to source electrode and drain electrode,
To form Ohmic contact；Ni/Au is deposited on grid, and is annealed to grid, to form Schottky contacts.
Further, step S6 includes:
S61 deposits a SiO in AlGaN potential barrier2Layer；
S62, to SiO2Layer performs etching, so that the surface portion region of AlGaN potential barrier is exposed, wherein the tool of etching
Body step includes gluing, exposure, development, solid film and etching；
S63 grows the InGaN cap layers containing the vacancy In on the partial region that AlGaN potential barrier surface is exposed.
Further, in step S61, SiO is deposited using PECVD method2Layer, wherein SiO2Layer with a thickness of 100-200nm,
Temperature is 200-400 DEG C when deposition.
Further, in step S63, by alternately low-temperature epitaxy and high annealing, periodically to grow containing In
The InGaN cap layers in vacancy, wherein the growth thickness in each period is 5-10nm, and InGaN cap layers overall thickness is 50-150nm.
Further, the temperature of the InGaN cap layers low-temperature epitaxy containing the vacancy In is 700-800 DEG C, the temperature of high annealing
It is 900-1000 DEG C, the time of each period high annealing is 5-10min.
Further, in step S7, before making source electrode and drain electrode on AlGaN potential barrier surface, using wet etching side
Method removes the remaining SiO in the AlGaN potential barrier2Layer.
Further, epitaxial growth is carried out using mocvd method, to grow GaN or AlN nucleation
Layer, GaN buffer layer, GaN channel layer, AlN insert layer, AlGaN potential barrier and the InGaN cap layers containing the vacancy In, specifically include:
Temperature is set as between 500-600 DEG C, pressure is adjusted between 300-600Torr, grows the low temperature of 10-150nm
GaN AlN nucleating layer；
Temperature is increased between 900-1100 DEG C, pressure reduction is between 50-200Torr, and the half of growth C auto-dope is absolutely
2-3 μm of layer of edge high resistant GaN；
Temperature is adjusted between 1000-1200 DEG C, pressure is adjusted between 200-500Torr, grows high mobility
GaN channel layer 10-100nm；
Temperature is adjusted between 800-1050 DEG C, pressure is adjusted to 50-100Torr, growing AIN doped layer, with a thickness of
1-3nm。
Temperature is adjusted between 800-1050 DEG C, pressure is adjusted to 50-100Torr, grows AlGaN potential barrier, thickness
For 10-30nm, Al component is between 15-30%.
Further, substrate of the present invention is sapphire, silicon carbide or silicon substrate.
Fig. 1 is the schematic diagram of AlGaN/GaN high electron mobility transistor produced by the present invention, as shown in Figure 1, AlGaN/
GaN high electron mobility transistor successively has GaN or AlN nucleating layer, GaN buffer layer, GaN channel in substrate growth from bottom to up
Layer, AlN insert layer, AlGaN potential barrier and InGaN cap layers, AlGaN potential barrier also on make source and drain electrode respectively, and
The production of InGaN cap layers has grid.Wherein, a large amount of vacancy In are contained in InGaN cap layers, since InGaN material is relatively low
At a temperature of grow, since the atom bond energy between In-N is weaker, when the temperature increases, In atom is readily volatilized, formed the vacancy In,
It is formed after the vacancy In, vacancy arest neighbors atom respectively has an azygous electronics, becomes unsaturated covalent bond, these keys tendency
In the property for receiving electronics to make the vacancy In show acceptor impurity in body material.In this way, being moved back using low-temperature epitaxy high temperature
Fiery period duplicate growth technique grows the thicker InGaN cap layers containing a large amount of vacancy In.Due to the vacancy In in cap layers
Electronics can be adsorbed by largely existing, and electronegativity is presented in entire cap layers, in this way raise barrier layer conduction level, to exhaust channel
Two-dimensional electron gas realizes the enhanced of device.
It is bright from below in conjunction with specific embodiment, and reference to make the object, technical solutions and advantages of the present invention clearer
Attached drawing, the present invention is described in more detail.
1, sapphire, silicon carbide or silicon substrate are cleaned up and is put into Metallo-Organic Chemical Vapor deposition (MOCVD) system
In system, temperature is increased between 500-600 DEG C, and pressure is adjusted between 300-600Torr, grows the low temperature GaN of 10-150nm
Or AlN nucleating layer.
2, temperature being increased between 900-1100 DEG C, pressure reduction is between 50-200Torr, and the half of growth C auto-dope
Insulate 2-3 μm of high resistant GaN layer.
3, temperature is adjusted between 1000-1200 DEG C, pressure is adjusted between 200-500Torr, grows high mobility
GaN channel layer 10-100nm.
4, temperature is adjusted between 800-1050 DEG C, pressure is adjusted to 50-100Torr, growing AIN insert layer, thickness
For 1-3nm.
5, temperature is adjusted between 800-1050 DEG C, pressure is adjusted to 50-100Torr, grows AlGaN potential barrier, thick
Degree is 10-30nm, and Al component is between 15-30%.
6, the structure of growth is put into PECVD furnace, between 200-400 DEG C, deposition a layer thickness 100-200nm it
Between SiO2Layer.
7, gluing, exposure, development, solid film, etching on the device for be deposited with SiO2 layers, in HEMT gate pole regional opening,
Leave the SiO2 exposure mask in addition to area of grid.
8, the above device is put into MOCVD system and carries out secondary epitaxy, growth contains the InGaN cap in a large amount of vacancy In
Layer.Specifically first temperature is raised between 700-800 DEG C, is passed through the source In, the source Ga grows the cap of about 5-10nm at this temperature
Layer, then increases the temperature between 900-1000 DEG C, keeps temperature 5-10min, to ensure the In in grown InGaN thin layer
Atom, which sufficiently volatilizees, forms the vacancy In, and temperature is then dropped back to InGaN layer growth temperature and is grown, more than repetitive cycling is walked
Suddenly, the overall thickness of the InGaN cap layers containing a large amount of vacancy In of growth is made to reach about 50-150nm.
9, SiO2 layer of the device surface in addition to area of grid is got rid of using the technique of wet etching.
10, it in the source of HEMT device, drain region depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au, is deposited in area of grid
Ni/Au forms Ohmic contact and Schottky contacts after annealing respectively.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (9)
1. a kind of enhanced AlGaN/GaN high electron mobility transistor preparation method characterized by comprising
S1 grows a GaN or AlN low temperature nucleation layer on a substrate；
S2 grows a GaN buffer layer on GaN the or AlN nucleating layer；
S3 grows a GaN channel layer on the GaN buffer layer；
S4 grows an AlN insert layer on the GaN channel layer；
S5 grows an AlGaN potential barrier in the AlN insert layer；
S6, in the one InGaN cap layers of surface portion region growing of the AlGaN potential barrier, wherein the InGaN cap layers contain
The vacancy In, since the presence in the vacancy In can adsorb electronics, electronegativity is presented in entire cap layers；
S7 does not grow the region of the InGaN cap layers on the AlGaN potential barrier surface, makes source electrode and drain electrode respectively, and
Grid is made in the InGaN cap layers；Wherein,
The step S6 includes:
S61 deposits a SiO in the AlGaN potential barrier2Layer；
S62, to the SiO2Layer performs etching, so that the surface portion region of the AlGaN potential barrier is exposed；
S63 grows the InGaN cap layers containing the vacancy In on the partial region that the AlGaN potential barrier surface is exposed.
2. the preparation method of AlGaN/GaN high electron mobility transistor according to claim 1, in the step S61,
The SiO is deposited using PECVD method2Layer, wherein the SiO2Layer with a thickness of 100-200nm, temperature is 200- when deposition
400℃。
3. enhanced AlGaN according to claim 1/GaN high electron mobility transistor preparation method, feature exist
In by alternately low-temperature epitaxy and high annealing, described containing the vacancy In periodically to grow in the step S63
InGaN cap layers, wherein the growth thickness in each period is 5-10nm, and the InGaN cap layers overall thickness containing the vacancy In is
50-150nm。
4. enhanced AlGaN according to claim 3/GaN high electron mobility transistor preparation method, feature exist
In, the temperature of the InGaN cap layers low-temperature epitaxy containing the vacancy In is 700-800 DEG C, and the temperature of high annealing is 900-1000 DEG C,
The time of each period high annealing is 5-10min.
5. enhanced AlGaN according to claim 1/GaN high electron mobility transistor preparation method, feature exist
In, in the step S7, on the AlGaN potential barrier surface make source electrode and drain electrode before, gone using wet etching method
Except the remaining SiO in the AlGaN potential barrier2Layer.
6. enhanced AlGaN according to claim 1/GaN high electron mobility transistor preparation method, feature exist
In, further includes:
S8, depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au in the source electrode and drain electrode, and the source electrode and drain electrode is carried out
Annealing, to form Ohmic contact；Ni/Au is deposited on the grid, and is annealed to the grid, to form schottky junctions
Touching.
7. enhanced AlGaN according to claim 1/GaN high electron mobility transistor preparation method, feature exist
In, epitaxial growth is carried out using mocvd method, it is slow to grow GaN the or AlN nucleating layer, GaN
Rush layer, GaN channel layer, AlN insert layer, AlGaN potential barrier and the InGaN cap layers containing the vacancy In.
8. enhanced AlGaN according to claim 1/GaN high electron mobility transistor preparation method, feature exist
In,
GaN the or AlN nucleating layer with a thickness of 10-150nm；
The GaN buffer layer with a thickness of between 2-3 μm；
The GaN channel layer with a thickness of 10-100nm；
The AlN insert layer with a thickness of between 1-3nm；
The AlGaN potential barrier with a thickness of 10-30nm, and the content of Al is 15%-30%.
9. enhanced AlGaN according to claim 1/GaN high electron mobility transistor preparation method, feature exist
In the substrate is one of sapphire, silicon carbide or silicon.
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| CN110335804A (en) * | 2019-04-17 | 2019-10-15 | 中国科学院半导体研究所 | A kind of growing method of InGaN film |
| CN110767747A (en) * | 2019-10-28 | 2020-02-07 | 北京华进创威电子有限公司 | Enhanced GaN-based high electron mobility transistor material structure |
| CN110767746A (en) * | 2019-10-28 | 2020-02-07 | 北京华进创威电子有限公司 | HEMT structure with in-situ grown dielectric layer as cap layer and manufacturing method thereof |
| CN111463260B (en) * | 2020-03-10 | 2022-09-13 | 安徽长飞先进半导体有限公司 | Vertical high electron mobility field effect transistor and preparation method thereof |
| CN111952365A (en) * | 2020-08-14 | 2020-11-17 | 中国科学院半导体研究所 | Carbon-doped and controlled GaN-based HEMT epitaxial structure and manufacturing method thereof |
| CN113964192A (en) * | 2021-09-06 | 2022-01-21 | 西安电子科技大学 | Non-polar GaN-based Schottky diode and preparation method thereof |
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