CN105789047A - Preparation method of enhanced AlGaN/GaN high-electron mobility transistor - Google Patents
Preparation method of enhanced AlGaN/GaN high-electron mobility transistor Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention provides a preparation method of an enhanced AlGaN/GaN high-electron mobility transistor. According to the method, a GaN or AlN nucleating layer, a GaN buffer layer, a GaN channel layer, a AlN insert layer, a AlGaN barrier layer and a InGaN cap layer are grown on a substrate sequentially; a source and a drain are fabricated on the AlGaN barrier layer; a grid is fabricated on the InGaN cap layer; and the enhanced AlGaN/GaN high-electron mobility transistor can be obtained. According to the preparation method of the enhanced AlGaN/GaN high-electron mobility transistor of the invention, the InGaN cap layer contains a large number of In vacancies; since the In vacancies can absorb electrons, the whole cap layer presents electronegativity; the energy level of the conduction band of the barrier layer is increased; and therefore, the two-dimensional electron gas of a channel can be depleted, and the enhancement of the device can be realized, the difficulty that a traditional P type cap layer is difficult to realize high-concentration p doping can be eliminated, and the operability of the preparation of the device is enhanced.
Description
Technical field
The invention belongs to semiconductor applications, the preparation method particularly relating to a kind of enhanced AlGaN/GaN HEMT (HEMT).
Background technology
GaN, as third generation semiconductor material with wide forbidden band, becomes study hotspot instantly already.GaN has that energy gap is big, critical breakdown electric field is high, electronics saturation drift velocity high, prepare high-power, high frequency, at a high speed, there is in the semiconductor power device of small size the advantage of uniqueness.
With the AlGaN/GaN GaN base power electronic devices being representative, due to himself spontaneous polarization effect and piezoelectric polarization effect, producing substantial amounts of two-dimensional electron gas at heterojunction boundary place, its concentration is up to 1013cm-2 magnitude, electron mobility 2000cm2More than/V s.These character cause that AlGaN/GaN base power device has the advantages such as electric current density is big, conducting resistance is low, power density is big.This is allowed to condition at the field of power electronics such as battery management, wind-power electricity generation, solaode, electric automobile and has a wide range of applications.
Owing to AlGaN/GaN power electronic devices is generally depletion device, this is allowed to condition in circuit design to add the complexity of power consumption and circuit design.Simultaneously in power electronics applications, owing to its normally opened characteristic causes that the safety that circuit works is substantially reduced, when grid lost efficacy owing to lacking self-protection mechanism, cause there is serious potential safety hazard.Based on disadvantages described above, enhancement type high electron mobility device has had become as emphasis and the focus of research at present.
For the research of enhancement device, methods such as etching recessed grid, fluorion injection, growth p-GaN or p-AlGaN cap layers is generally adopted to exhaust the two-dimensional electron gas of grid lower channels at present.But these methods have bigger defect in technique and device performance, for instance recessed gate etching process is difficult to accurate control, the etching injury being simultaneously introduced is relatively big, can cause current collapse phenomenon, worsens the reliability of device；Fluorion injects and also brings along series of stable sex chromosome mosaicism；Growing P-type cap layers is due to factors such as self-compensation mechanism and acceptor impurity activation energy height so that the doping efficiency of acceptor doping atom is low, is difficulty with the p-type cap layers growth of high-dopant concentration.
Summary of the invention
(1) to solve the technical problem that
It is an object of the invention to, the preparation method that a kind of enhanced AlGaN/GaN HEMT is provided, achieve the AlGaN/GaN HEMT of enhancement mode, and method has technique is controlled, etching injury is little, device technology reliability is high advantage.
(2) technical scheme
The preparation method that the present invention provides a kind of enhanced AlGaN/GaN HEMT, including:
S1, at a Grown one GaN or AlN low temperature nucleation layer；
S2, grows a GaN cushion on GaN or AlN nucleating layer；
S3, grows a GaN channel layer on GaN cushion；
S4, grows an AlN interposed layer on GaN channel layer；
S5, grows an AlGaN potential barrier on AlN interposed layer；
S6, in the surface portion region growing one InGaN cap layers of AlGaN potential barrier, wherein, InGaN cap layers contains In room；
S7, does not grow the region of described InGaN cap layers on AlGaN potential barrier surface, makes source electrode and drain electrode respectively, and makes grid in described InGaN cap layers.
(3) beneficial effect
InGaN cap layers in the present invention contains a large amount of In room, owing to a large amount of existence in In room can adsorb electronics, whole cap layers presents electronegativity, barrier layer conduction level is so made to raise, thus exhausting the two-dimensional electron gas of raceway groove, realize the enhancement mode of device, and avoid the more difficult difficult point realizing high concentration p doping of tradition P type cap layers, enhance operability prepared by device.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of enhanced AlGaN/GaN HEMT that the present invention prepares.
Fig. 2 is the flow chart of the preparation method of enhanced AlGaN provided by the invention/GaN HEMT.
Detailed description of the invention
The preparation method that the present invention provides a kind of enhanced AlGaN/GaN HEMT, method is successively in a Grown GaN or AlN nucleating layer, GaN cushion, GaN channel layer, AlN interposed layer, AlGaN potential barrier and the InGaN cap layers containing In room, and in AlGaN potential barrier, make source electrode and drain electrode, and in InGaN cap layers, make grid, obtain the AlGaN/GaN HEMT of enhancement mode.InGaN cap layers in the present invention contains a large amount of In room, owing to a large amount of existence in In room can adsorb electronics, whole cap layers presents electronegativity, barrier layer conduction level is so made to raise, thus exhausting the two-dimensional electron gas of raceway groove, realize the enhancement mode of device, and avoid the more difficult difficult point realizing high concentration p doping of tradition P type cap layers, enhance operability prepared by device.
Fig. 2 is the flow chart of the preparation method of enhanced AlGaN provided by the invention/GaN HEMT, as in figure 2 it is shown, method includes:
S1, at a Grown one GaN or AlN low temperature nucleation layer；
S2, grows a GaN cushion on GaN or AlN nucleating layer；
S3, grows a GaN channel layer on GaN cushion；
S4, grows an AlN interposed layer on GaN channel layer；
S5, grows an AlGaN potential barrier on AlN interposed layer；
S6, in the surface portion region growing one InGaN cap layers of AlGaN potential barrier, wherein, InGaN cap layers contains In room；
S7, does not grow the region of InGaN cap layers on AlGaN potential barrier surface, makes source electrode and drain electrode respectively, and makes grid in InGaN cap layers；
S8, depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au on source electrode and drain electrode, and source electrode and drain electrode are annealed, to form Ohmic contact；Grid deposits Ni/Au, and grid is annealed, to form Schottky contacts.
Further, step S6 includes:
S61, deposits a SiO in AlGaN potential barrier2Layer；
S62, to SiO2Layer performs etching, so that the surface portion region of AlGaN potential barrier is exposed, wherein, the concrete steps of etching include gluing, exposure, development, solid film and etching；
S63, grows an InGaN cap layers containing In room on the subregion that AlGaN potential barrier surface is exposed.
Further, in step S61, adopt PECVD method deposition SiO2Layer, wherein, SiO2The thickness of layer is 100-200nm, and during deposition, temperature is 200-400 DEG C.
Further, in step S63, by low-temperature epitaxy and the high annealing of hocketing, periodically to grow the InGaN cap layers containing In room, wherein, the growth thickness in each cycle is 5-10nm, InGaN cap layers gross thickness is 50-150nm.
Further, the temperature of the InGaN cap layers low-temperature epitaxy containing In room is 700-800 DEG C, and the temperature of high annealing is 900-1000 DEG C, and the time of each cycle high annealing is 5-10min.
Further, in step S7, before AlGaN potential barrier surface makes source electrode and drain electrode, wet etching method is adopted to remove the remaining SiO in described AlGaN potential barrier2Layer.
Further, adopt mocvd method to carry out epitaxial growth, to grow GaN or AlN nucleating layer, GaN cushion, GaN channel layer, AlN interposed layer, AlGaN potential barrier and the InGaN cap layers containing In room, specifically include:
Being set between 500-600 DEG C by temperature, pressure adjusts between 300-600Torr, grows low temperature GaN or the AlN nucleating layer of 10-150nm；
Being increased between 900-1100 DEG C by temperature, pressure is reduced between 50-200Torr, 2-3 μm of the semi-insulating high resistant GaN layer of growth C auto-dope；
Temperature being adjusted between 1000-1200 DEG C, pressure is adjusted between 200-500Torr, the GaN channel layer 10-100nm of growth high mobility；
Temperature being adjusted between 800-1050 DEG C, pressure is adjusted to 50-100Torr, growing AIN doped layer, and thickness is 1-3nm.
Temperature being adjusted between 800-1050 DEG C, pressure adjusts 50-100Torr, grows AlGaN potential barrier, and thickness is that 10-30nm, Al component is between 15-30%.
Further, substrate of the present invention is sapphire, carborundum or silicon substrate.
Fig. 1 is the schematic diagram of the AlGaN/GaN HEMT that the present invention prepares, as shown in Figure 1, AlGaN/GaN HEMT has GaN or AlN nucleating layer, GaN cushion, GaN channel layer, AlN interposed layer, AlGaN potential barrier and InGaN cap layers at substrate growth from bottom to up successively, AlGaN potential barrier also goes up to make respectively source electrode and drain electrode, and InGaN cap layers makes and has grid.Wherein, containing a large amount of In rooms in InGaN cap layers, owing to InGaN material grows at relatively low temperature, owing to the atom bond energy between In-N is more weak, when the temperature increases, In atom is readily volatilized, forming In room, after forming In room, room arest neighbors atom is respectively arranged with an azygous electronics, becoming unsaturated covalent bond, these keys tend to accept electronics so that In room presents the character of acceptor impurity in body material.So, the growth technique that low-temperature epitaxy high temperature anneal cycles repeats is utilized to grow the thicker InGaN cap layers containing a large amount of In rooms.Owing to a large amount of existence in In room can adsorb electronics in cap layers, whole cap layers presents electronegativity, so makes barrier layer conduction level raise, thus exhausting the two-dimensional electron gas of raceway groove, it is achieved the enhancement mode of device.
For make the object, technical solutions and advantages of the present invention clearly bright from, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
1, by sapphire, carborundum or silicon substrate clean up to be put in metal organic chemical vapor deposition (MOCVD) system, temperature is increased between 500-600 DEG C, and pressure adjusts between 300-600Torr, grows low temperature GaN or the AlN nucleating layer of 10-150nm.
2, being increased between 900-1100 DEG C by temperature, pressure is reduced between 50-200Torr, 2-3 μm of the semi-insulating high resistant GaN layer of growth C auto-dope.
3, adjusting between 1000-1200 DEG C by temperature, pressure is adjusted between 200-500Torr, the GaN channel layer 10-100nm of growth high mobility.
4, adjusting between 800-1050 DEG C by temperature, pressure is adjusted to 50-100Torr, growing AIN interposed layer, and thickness is 1-3nm.
5, adjusting between 800-1050 DEG C by temperature, pressure adjusts 50-100Torr, grows AlGaN potential barrier, and thickness is that 10-30nm, Al component is between 15-30%.
6, the structure of growth is put in PECVD stove, between 200-400 DEG C, deposit a layer thickness SiO between 100-200nm2Layer.
7, there are gluing on the device of SiO2 layer, exposure, development, solid film, etching in deposition, at HEMT gate pole regional opening, leave the SiO2 mask except area of grid.
8, above device is put into MOCVD system carries out secondary epitaxy, the growth InGaN cap layers containing a large amount of In rooms.Specifically first temperature is raised between 700-800 DEG C, pass into In source, Ga source, grow the cap layers of about 5-10nm at this temperature, then increase the temperature between 900-1000 DEG C, keep this temperature 5-10min, with guarantee In atom in growth InGaN thin layer fully volatilize formation In room, then temperature drops back to InGaN layer growth temperature grow, repetitive cycling above step, make the gross thickness of the InGaN cap layers containing a large amount of In rooms of growth reach about 50-150nm.
9, the technique of wet etching is adopted to get rid of device surface SiO2 layer except area of grid.
10, in the source of HEMT device, drain region depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au, deposit Ni/Au at area of grid, after annealing, form Ohmic contact and Schottky contacts respectively.
Particular embodiments described above; the purpose of the present invention, technical scheme and beneficial effect have been further described; it is it should be understood that; the foregoing is only specific embodiments of the invention; it is not limited to the present invention; all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (10)
1. the preparation method of enhanced AlGaN/GaN HEMT, it is characterised in that including:
S1, at a Grown one GaN or AlN low temperature nucleation layer；
S2, grows a GaN cushion on described GaN or AlN nucleating layer；
S3, grows a GaN channel layer on described GaN cushion；
S4, grows an AlN interposed layer on described GaN channel layer；
S5, grows an AlGaN potential barrier on described AlN interposed layer；
S6, in the surface portion region growing one InGaN cap layers of described AlGaN potential barrier, wherein, described InGaN cap layers contains In room；
S7, does not grow the region of described InGaN cap layers on described AlGaN potential barrier surface, makes source electrode and drain electrode respectively, and makes grid in described InGaN cap layers.
2. the preparation method of enhanced AlGaN according to claim 1/GaN HEMT, it is characterised in that described step S6 includes:
S61, deposits a SiO in described AlGaN potential barrier2Layer；
S62, to described SiO2Layer performs etching, so that the surface portion region of described AlGaN potential barrier is exposed；
S63, grows an InGaN cap layers containing In room on the subregion that described AlGaN potential barrier surface is exposed.
3. the preparation method of AlGaN/GaN HEMT according to claim 2, in described step S61, adopts PECVD method to deposit described SiO2Layer, wherein, described SiO2The thickness of layer is 100-200nm, and during deposition, temperature is 200-400 DEG C.
4. the preparation method of enhanced AlGaN according to claim 2/GaN HEMT, it is characterized in that, in described step S63, by low-temperature epitaxy and the high annealing of hocketing, periodically to grow the described InGaN cap layers containing In room, wherein, the growth thickness in each cycle is 5-10nm, and the described InGaN cap layers gross thickness containing In room is 50-150nm.
5. the preparation method of enhanced AlGaN according to claim 4/GaN HEMT, it is characterized in that, the temperature of the InGaN cap layers low-temperature epitaxy containing In room is 700-800 DEG C, the temperature of high annealing is 900-1000 DEG C, and the time of each cycle high annealing is 5-10min.
6. the preparation method of enhanced AlGaN according to claim 2/GaN HEMT, it is characterized in that, in described step S7, before described AlGaN potential barrier surface makes source electrode and drain electrode, wet etching method is adopted to remove the remaining SiO in described AlGaN potential barrier2Layer.
7. the preparation method of enhanced AlGaN according to claim 1/GaN HEMT, it is characterised in that also include:
S8, depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au on described source electrode and drain electrode, and described source electrode and drain electrode are annealed, to form Ohmic contact；Described grid deposits Ni/Au, and described grid is annealed, to form Schottky contacts.
8. the preparation method of enhanced AlGaN according to claim 1/GaN HEMT, it is characterized in that, mocvd method is adopted to carry out epitaxial growth, to grow described GaN or AlN nucleating layer, GaN cushion, GaN channel layer, AlN interposed layer, AlGaN potential barrier and the InGaN cap layers containing In room.
9. the preparation method of enhanced AlGaN according to claim 1/GaN HEMT, it is characterised in that
The thickness of described GaN or AlN nucleating layer is 10-150nm；
Between the thickness of described GaN cushion is 2-3 μm；
The thickness of described GaN channel layer is 10-100nm；
The thickness of described AlN interposed layer is between 1-3nm；
The thickness of described AlGaN potential barrier is 10-30nm, and the content of Al is 15%-30%.
10. the preparation method of enhanced AlGaN according to claim 1/GaN HEMT, it is characterised in that described substrate is the one in sapphire, carborundum or silicon.
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| CN106601787A (en) * | 2016-12-01 | 2017-04-26 | 北京大学 | InxAlyGal-x-yN/GaN heterostructure epitaxy method |
| CN107887435A (en) * | 2017-11-28 | 2018-04-06 | 中国科学院半导体研究所 | Enhanced GaN HEMT preparation method |
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| CN113964192A (en) * | 2021-09-06 | 2022-01-21 | 西安电子科技大学 | Non-polar GaN-based Schottky diode and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103930995A (en) * | 2011-11-22 | 2014-07-16 | 德州仪器公司 | Enhancement-mode group III-n high electronic mobility transistor with reverse polarization cap |
-
2016
- 2016-05-13 CN CN201610318436.4A patent/CN105789047B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103930995A (en) * | 2011-11-22 | 2014-07-16 | 德州仪器公司 | Enhancement-mode group III-n high electronic mobility transistor with reverse polarization cap |
Non-Patent Citations (2)
| Title |
|---|
| S. LAWRENCE SELVARAJ ETC.: "MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown", 《 68TH DEVICE RESEARCH CONFERENCE》 * |
| T.MIZUTANI ECT.: "AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation", 《ELECTRON DEVICE LETTERS》 * |
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