CN114551632A - PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and preparation method thereof - Google Patents
PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and a preparation method thereof, belonging to the technical field of photoelectric detection. The PN junction type self-driven photodetector includes: the two-dimensional P-type semiconductor layer tellurium, the drain electrode, the two-dimensional N-type semiconductor layer transition metal sulfide, the source electrode and the insulating substrate; the two-dimensional P-type semiconductor layer tellurium is positioned at the upper end of one side of the insulating substrate, the drain electrode is positioned at the upper end of the two-dimensional P-type semiconductor layer tellurium and is not connected with the two-dimensional N-type semiconductor layer transition metal sulfide, the two-dimensional N-type semiconductor layer transition metal sulfide is positioned above the two-dimensional P-type semiconductor layer tellurium and extends towards the upper end of the other side of the insulating substrate, and the source electrode is positioned at the upper end of the direct contact part of the two-dimensional N-type semiconductor layer transition metal sulfide and the insulating substrate. The prepared PN junction type self-driven photoelectric detector of the two-dimensional tellurium and transition metal sulfide has short response time, high sensitivity and small dark current.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and a preparation method thereof.
Background
The two-dimensional transition metal sulfide has the characteristics of higher light absorption efficiency, layer number dependent band gap, flexibility and transparency, and is particularly suitable for constructing a high-performance photoelectric detector. Due to van der waals interactions between layers, different types of two-dimensional materials can be vertically stacked to construct van der waals heterojunctions without considering lattice mismatch problems of conventional semiconductor heterointerfaces. Due to different Fermi energy levels of different two-dimensional materials, when the different two-dimensional materials are stacked to form a Van der Waals heterojunction, a built-in electric field generated by carrier diffusion between the different two-dimensional materials can effectively promote the separation of a photo-generated electron hole pair, and self-driven photoelectric detection, namely photovoltaic photoelectric detection, is realized. The PN junction type photoelectric detector constructed by the two-dimensional N-type semiconductor and the two-dimensional P-type semiconductor can fully exert the advantages of the conduction of semiconductor holes and electrons, improve the built-in electric field intensity and further inhibit dark current. The photovoltaic photoelectric detector has the advantages of high response speed, low dark current, low power consumption and the like, and plays an important role in application scenes such as automatic driving, face recognition and the like. The two-dimensional tellurium is a typical P-type semiconductor, has an adjustable band gap between 0.35 and 1 electron volt, has good light absorption (1 mu m to 3 mu m) for near infrared and middle infrared bands, has ultrahigh carrier mobility (hole mobility can reach 1000 square centimeters per volt per second), and is a good candidate for a two-dimensional infrared photoelectric detector.
At present, the research on a two-dimensional tellurium-based photovoltaic photoelectric detector is not much, and mainly focuses on photoconductive photoelectric detection with tellurium as a single material, although the wide-spectrum infrared light response can be realized, the response speed is too slow; meanwhile, the dark current is too large, which results in large power consumption of the device.
Disclosure of Invention
In order to solve the problems, the invention provides a PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and a preparation method thereof. The photoelectric detector utilizes a built-in electric field generated by a PN junction of a P-type semiconductor tellurium with hole conduction and an N-type transition metal sulfide with electron conduction to realize effective separation of photo-generated electron hole pairs, and utilizes a photovoltaic effect generated by the PN junction under illumination to realize self-driven photoelectric detection under zero bias. The semi-vertical structure greatly improves the light absorption area, the larger built-in electric field generated by the PN junction greatly inhibits the increase of reverse photocurrent, improves the sensitivity of the detector and shortens the response time.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention adopts one of the technical schemes: provided is a PN junction type self-driven photodetector of two-dimensional tellurium and transition metal sulfide, comprising: the two-dimensional P-type semiconductor layer tellurium, the drain electrode, the two-dimensional N-type semiconductor layer transition metal sulfide, the source electrode and the insulating substrate; the two-dimensional P-type semiconductor layer tellurium is positioned at the upper end of one side of the insulating substrate, the drain electrode is positioned at the upper end of the two-dimensional P-type semiconductor layer tellurium and is not connected with the two-dimensional N-type semiconductor layer transition metal sulfide, the two-dimensional N-type semiconductor layer transition metal sulfide is positioned above the two-dimensional P-type semiconductor layer tellurium and extends towards the upper end of the other side of the insulating substrate, and the source electrode is positioned at the upper end of the direct contact part of the two-dimensional N-type semiconductor layer transition metal sulfide and the insulating substrate.
Preferably, the thickness of the two-dimensional P-type semiconductor layer tellurium is 5-15 nm.
Preferably, the drain electrode comprises a bismuth, indium, chromium, titanium, aluminum or nickel electrode with a thickness of 40-100 nm.
Preferably, the thickness of the two-dimensional N-type semiconductor layer transition metal sulfide is 0.7-30 nm.
Preferably, the source electrode comprises a gold, palladium or platinum electrode with a thickness of 40-100 nm.
Preferably, the insulating substrate includes a silicon-on-insulator substrate, a sapphire substrate, or a glass substrate.
The second technical scheme of the invention is as follows: the preparation method of the PN junction type self-driven photoelectric detector of the two-dimensional tellurium and transition metal sulfide comprises the following steps:
1) fishing out the two-dimensional tellurium nanosheets dispersed in the aqueous solution by using Polydimethylsiloxane (PDMS), transferring the two-dimensional tellurium nanosheets onto the insulating substrate, heating and removing the PDMS to obtain the two-dimensional P-type semiconductor layer tellurium;
2) coating a layer of organic glue on the surface of a two-dimensional N-type semiconductor layer transition metal sulfide nanosheet, transferring the two-dimensional N-type semiconductor layer transition metal sulfide nanosheet to a two-dimensional P-type semiconductor layer tellurium in an organic glue auxiliary transfer mode, extending out a part to be in contact with the insulating substrate, and removing the organic glue to obtain a two-dimensional N-type semiconductor layer transition metal sulfide;
3) evaporating the source electrode in the contact area of the two-dimensional N-type semiconductor layer transition metal sulfide and the insulating substrate;
4) and evaporating the drain electrode above the two-dimensional P-type semiconductor layer tellurium to obtain the two-dimensional tellurium and transition metal sulfide PN junction type self-driven photoelectric detector.
Preferably, the heating in step 1) is carried out at a temperature of 50 to 100 ℃ for a time of 5 to 10 seconds.
Preferably, the organic glue in step 2) comprises polypropylene carbonate (PPC) or polymethyl methacrylate (PMMA); the organic glue is removed by dissolving with acetone.
Preferably, the evaporation in step 3) and step 4) comprises thermal evaporation or electron beam evaporation.
Preferably, the preparation step of the two-dimensional tellurium nanosheets in step 1) comprises: sodium tellurite is used as a tellurium source, hydrazine hydrate is selected as a strong reducing agent in an alkaline water area environment, polyvinylpyrrolidone is used as a reaction activator ligand for epitaxial growth of a tellurium monatomic chain, and the mass ratio of the sodium tellurite to the polyvinylpyrrolidone is 1-50; reacting for 5-40h at the temperature of 160-200 ℃, quenching after the reaction is finished, and obtaining the two-dimensional tellurium nanosheets with different sizes dispersed in the aqueous solution in a mode of centrifuging the mother solution for many times.
Preferably, the transition metal sulfide nanosheets of step 2) are obtained by chemical vapor deposition, physical vapor deposition, or mechanical exfoliation.
The invention has the following beneficial technical effects:
the two-dimensional tellurium and transition metal sulfide PN junction type self-driven photoelectric detector disclosed by the invention fully utilizes a built-in electric field generated by the two-dimensional N-type semiconductor and the two-dimensional P-type semiconductor, effectively promotes the separation of photo-generated electron hole pairs, inhibits the reverse photocurrent of the photoelectric detector, and simultaneously effectively promotes the light absorption of the wide-bandgap transition metal sulfide by the heterojunction stacking structure of the two-dimensional transition metal sulfide under the upper tellurium nanosheet and the lower tellurium nanosheet, thereby improving the sensitivity of the self-driven photoelectric detector and shortening the response time.
Drawings
Fig. 1 is a schematic structural diagram of a two-dimensional tellurium and transition metal sulfide PN junction type self-driven photodetector in the present invention.
Fig. 2 shows the photoresponse time of the two-dimensional tellurium and tungsten disulfide PN junction type self-driven photodetector prepared in example 1 under illumination of 633nm wavelength band light.
Fig. 3 shows the photoresponse time of the two-dimensional tellurium and tungsten disulfide PN junction self-driven photodetector prepared in example 2 under the illumination of light in a 1064nm wavelength band.
Fig. 4 shows the photoresponse time of the two-dimensional tellurium and molybdenum disulfide PN junction type self-driven photodetector prepared in example 3 under illumination of light in a 532nm wavelength band.
Fig. 5 shows the photoresponse time of the two-dimensional tellurium and tungsten disulfide PN junction type self-driven photodetector prepared in comparative example 1 under illumination of 633nm wavelength band light.
Wherein, 1 is a two-dimensional P-type semiconductor layer tellurium, 2 is a drain electrode, 3 is a two-dimensional N-type semiconductor layer transition metal sulfide, 4 is a source electrode, and 5 is an insulating substrate.
Detailed Description
Reference will now be made in detail to various exemplary embodiments of the invention, the detailed description should not be construed as limiting the invention but as a more detailed description of certain aspects, features and embodiments of the invention. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Further, for numerical ranges in this disclosure, it is understood that each intervening value, between the upper and lower limit of that range, is also specifically disclosed. Every intervening value, to the extent any stated value or intervening value in a stated range, and any other stated or intervening value in a stated range, is encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention.
As used herein, the terms "comprising," "including," "having," "containing," and the like are open-ended terms that mean including, but not limited to.
The structural schematic diagram of the two-dimensional tellurium and transition metal sulfide PN junction type self-driven photoelectric detector prepared by the embodiment of the invention is shown in figure 1, wherein 1 is a two-dimensional P-type semiconductor layer tellurium, 2 is a drain electrode, 3 is a two-dimensional N-type semiconductor layer transition metal sulfide, 4 is a source electrode, and 5 is an insulating substrate.
Example 1
The two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector comprises a mechanically stripped tungsten disulfide nanosheet, a source electrode chromium metal electrode, a two-dimensional tellurium nanosheet grown by a hydrothermal method, a drain electrode palladium metal electrode and an insulating silicon substrate. The thickness of the tungsten disulfide nanosheet is 6nm, the thickness of the tellurium nanosheet is 11nm, the thickness of the chromium electrode is 50nm, and the thickness of the palladium electrode is 50 nm. The construction method of the self-driven photoelectric detector comprises the following specific steps:
(1) preparing a tellurium nanosheet by a hydrothermal method: 0.1165g of sodium tellurite and 6.58g of polyvinylpyrrolidone are taken, and the mass ratio of the substances is 2: dissolving in 25mL of deionized water, measuring 2mL of ammonia water, fully stirring 1.5mL of hydrazine hydrate, placing in a 50mL reaction kettle, reacting at 180 ℃ for 5 hours, quenching after the reaction is finished to obtain dispersed tellurium nanosheets in a mother solution, and then extracting the tellurium nanosheets by using a deionized water multiple centrifugation method;
(2) preparing a tungsten disulfide nanosheet by a mechanical stripping method: placing the tungsten disulfide blocks on a blue PI adhesive tape, repeatedly stacking and stripping for ten times, transferring tungsten disulfide on the adhesive tape onto an insulating silicon chip, heating the insulating silicon chip on a hot plate at 70 ℃ for 10min, separating the insulating silicon chip from the adhesive tape to obtain thin tungsten disulfide nanosheets on the insulating silicon chip, and screening the tungsten disulfide nanosheets with required thickness under a light mirror;
(3) preparing a two-dimensional tellurium/tungsten disulfide heterojunction: and (3) fishing the tellurium nanosheets from the aqueous solution by using a PDMS (polydimethylsiloxane) auxiliary transfer method, accurately transferring the tellurium nanosheets to the surface of the insulating silicon substrate, heating the insulating silicon substrate to 80 ℃, and then lifting the PDMS to obtain the two-dimensional tellurium nanosheets on the surface of the insulating silicon substrate. Then spin-coating a layer of organic glue PPC on the surface of tungsten disulfide, heating the organic glue PPC on a hot plate at 100 ℃ for 1min, uncovering the PPC from the surface of the insulating silicon, moving the tungsten disulfide from the insulating substrate to the surface of the PPC, then precisely transferring the tungsten disulfide to the surface of two-dimensional tellurium in a PPC-assisted transfer mode by virtue of a precise transfer platform, heating the PPC to 100 ℃, lifting the PPC to obtain a tellurium/tungsten disulfide heterojunction, and finally dissolving the PPC by utilizing acetone;
(4) preparing an electrode: spin-coating a layer of glue PMMA for electron beam exposure on the surface of the tellurium/tungsten disulfide heterojunction, drawing a patterned electrode on the surface of the tungsten disulfide, evaporating a layer of chromium electrode with the thickness of 50nm by utilizing vacuum thermal evaporation after development, and dissolving the metal of the unexposed part by using acetone. And then spin-coating a layer of glue PMMA for electron beam exposure on the surface of the tellurium/tungsten disulfide heterojunction, drawing a patterned electrode on the surface of the tellurium, evaporating a layer of palladium electrode with the thickness of 50nm by using an electron beam evaporation process after development, and dissolving the metal of the unexposed part by using acetone to obtain the two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector.
The photoresponse time of the two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector prepared in example 1 under illumination of 633nm wave band is shown in FIG. 2, and as can be seen from FIG. 2, the rising edge time is 0.3 milliseconds, the falling edge time is 30 milliseconds, and the photocurrent is 1.9X 10-8In amperes.
Example 2
The two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector comprises a tungsten disulfide nanosheet prepared by a physical vapor deposition method, a source metal indium electrode, a two-dimensional tellurium nanosheet grown by a hydrothermal method, a drain gold electrode and an insulating silicon substrate. The thickness of the tungsten disulfide nanosheet is 2nm, the thickness of the tellurium nanosheet is 11nm, the thickness of the indium electrode is 60nm, and the thickness of the palladium electrode is 60 nm. The construction method of the self-driven photoelectric detector comprises the following specific steps:
(1) preparing a tungsten disulfide nanosheet by a physical vapor deposition method: disulfide powder with the purity of 99.99 percent is used as a reaction source and is placed in the central position of a tube furnace, the reaction source is heated to 1200 ℃, an insulating silicon wafer is placed in a downstream source region which is 30cm away from a tungsten disulfide source, the reaction is carried out for 3min, and natural air cooling is carried out to below 600 ℃, so that tungsten disulfide nano sheets can be obtained on the silicon wafer;
(2) preparing a tellurium nanosheet by a hydrothermal method: 0.1165g of sodium tellurite and 2.5233g of polyvinylpyrrolidone are taken, and the mass ratio of the materials is 5: dissolving in 25mL of deionized water, measuring 3mL of ammonia water, fully stirring 2mL of hydrazine hydrate, placing in a 50mL reaction kettle, reacting at 180 ℃ for 10 hours, quenching after the reaction is finished to obtain dispersed tellurium nanosheets in a mother solution, and then extracting the tellurium nanosheets by using a deionized water multiple centrifugation method;
(3) preparing a two-dimensional tellurium/tungsten disulfide heterojunction: and (3) fishing the tellurium nanosheets from the aqueous solution by using a PDMS (polydimethylsiloxane) auxiliary transfer method, accurately transferring the tellurium nanosheets to the surface of the insulating silicon substrate, heating the insulating silicon substrate to 80 ℃, and then lifting up PDMS to obtain two-dimensional tellurium nanosheets on the surface of the insulating silicon substrate. Spin-coating a layer of PMMA (polymethyl methacrylate) on a tungsten disulfide nano sheet obtained by physical vapor deposition, heating for 1min on a hot plate at 120 ℃, standing for 1min in a 1% hydrofluoric acid solution, obtaining PMMA loaded with the tungsten disulfide nano sheet on the surface of the solution, washing the PMMA by using a large amount of clear water, fishing the PMMA to the surface of PDMS to ensure that the tungsten disulfide face faces outwards, transferring PDMS + PMMA carrying tungsten disulfide to the surface of tellurium by using an accurate transfer technology, heating an accurate transfer platform to 100 ℃, lifting the PDMS to obtain a two-dimensional tellurium/tungsten disulfide heterojunction, and finally removing PMMS by using hot acetone;
(4) preparing an electrode: depositing a metal indium electrode with the thickness of 60nm on the surface of the tungsten disulfide by utilizing a thermal evaporation technology; and depositing a 60 nm-thick gold electrode on the surface of the tellurium nanosheet by using a thermal evaporation technology to obtain the two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector.
The photoresponse time of the two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector prepared in the example 2 under the illumination of a 1064nm wave band is shown in FIG. 3, and as can be seen from FIG. 3, the rising edge time is 0.7 milliseconds, the falling edge time is 0.9 milliseconds, and the photocurrent is 0.15 nanoamperes.
Example 3
The two-dimensional tellurium and molybdenum disulfide PN junction type self-driven photoelectric detector comprises a molybdenum disulfide nanosheet prepared by a chemical vapor deposition method, a source metal bismuth electrode, a two-dimensional tellurium nanosheet grown by a hydrothermal method, a drain platinum electrode and an insulating silicon substrate. The thickness of the tungsten disulfide nanosheet is 0.7nm, the thickness of the tellurium nanosheet is 11nm, the thickness of the bismuth electrode is 80nm, and the thickness of the platinum electrode is 80 nm. The construction method of the self-driven photoelectric detector comprises the following specific steps:
(1) preparing a tellurium nanosheet by a hydrothermal method: taking 0.0065g of sodium tellurite and 6.58g of polyvinylpyrrolidone, wherein the mass ratio of the substances is 2: dissolving in 25mL of deionized water, measuring 2.5mL of ammonia water, fully stirring 1.5mL of hydrazine hydrate, placing in a 50mL reaction kettle, reacting at 180 ℃ for 8 hours, quenching after the reaction is finished to obtain dispersed tellurium nanosheets in a mother solution, and then extracting the tellurium nanosheets by using a deionized water multiple centrifugation method;
(2) preparing molybdenum disulfide nanosheets by a chemical vapor deposition method: taking molybdenum trioxide and sulfur powder as reaction sources, argon as a carrier gas, oxygen as an auxiliary reaction gas, wherein a sulfur source is positioned at the upstream of the carrier gas, the molybdenum source is positioned in the center of a hearth, a reaction substrate insulating silicon wafer is positioned at the right upper end of the molybdenum source, the sulfur source is heated to 130 ℃, the molybdenum source is heated to 865 ℃, sulfur vapor flows through a molybdenum source region under the drive of the argon and is deposited on the surface of an insulating silicon substrate, and after reacting for 40min, the silicon wafer is taken out after being cooled to below 600 ℃ along with a furnace, so that a triangular single-layer molybdenum disulfide nanosheet is obtained;
(3) preparing a two-dimensional tellurium/molybdenum disulfide heterojunction: and (3) fishing the tellurium nanosheets from the aqueous solution by using a PDMS (polydimethylsiloxane) auxiliary transfer method, accurately transferring the tellurium nanosheets to the surface of the insulating silicon substrate, heating the insulating silicon substrate to 80 ℃, and then lifting up PDMS to obtain two-dimensional tellurium nanosheets on the surface of the insulating silicon substrate. Spin-coating a layer of PMMA (polymethyl methacrylate) on a tungsten disulfide nano sheet obtained by physical vapor deposition, heating for 1min on a hot plate at 120 ℃, standing for 1min in a 1% hydrofluoric acid solution, obtaining PMMA loaded with molybdenum disulfide nano sheets on the surface of the solution, washing the PMMA by using a large amount of clear water, fishing the PMMA to the surface of PDMS to ensure that molybdenum disulfide faces outwards, transferring PDMS + PMMA carrying molybdenum disulfide to the surface of tellurium by using an accurate transfer technology, heating an accurate transfer platform to 100 ℃, lifting the PDMS to obtain a two-dimensional tellurium/molybdenum disulfide heterojunction, and finally removing PMMS by using hot acetone;
(4) preparing an electrode: depositing a metal bismuth electrode with the thickness of 80nm on the surface of the molybdenum disulfide by using a thermal evaporation technology; and finally, depositing a platinum electrode with the thickness of 80nm on the surface of the tellurium nanosheet by using an electron beam deposition technology to obtain the two-dimensional tellurium and molybdenum disulfide PN junction type self-driven photoelectric detector.
The photoresponse time of the two-dimensional tellurium and molybdenum disulfide PN junction type self-driven photoelectric detector prepared in the example 3 under illumination of 532nm wave band is shown in FIG. 4, and as can be seen from FIG. 4, the rising edge time is 0.477 milliseconds, the falling edge time is 0.127 milliseconds, and the photocurrent is 1 microampere.
Comparative example 1
In this comparative example, the preparation methods of the two-dimensional tellurium nanosheet, tungsten disulfide, the source electrode and the drain electrode are completely the same as those in example 1, except that the thicknesses of the two-dimensional tellurium nanosheet, tungsten disulfide, the source electrode and the drain electrode are different, and we only describe the component parts of the device below.
The two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector comprises a mechanically stripped tungsten disulfide nanosheet, a source electrode chromium metal electrode, a two-dimensional tellurium nanosheet grown by a hydrothermal method, a drain electrode palladium metal electrode and an insulating silicon substrate. The thickness of the tungsten disulfide nanosheet is 40nm, the thickness of the tellurium nanosheet is 50nm, the thickness of the chromium electrode is 100nm, and the thickness of the palladium electrode is 100 nm.
The two-dimensional tellurium and tungsten disulfide PN junction type self-driven photoelectric detector prepared in comparative example 1 does not observe photovoltaic current under illumination of 633nm wave band, but the photoresponse time under 1V bias is shown in FIG. 5, as can be seen from FIG. 5, the rising edge time is 4s, the falling edge time is 41s, the reason that the response time is slow can be related to larger tunneling current and surface defect state of the heterojunction region, which deviates from the target of the originally designed fast response self-driven photoelectric detector, so when the two-dimensional tellurium nanosheet and the transition metal sulfide are too thick, the separation efficiency of the photon-generated electron-hole pair of the heterojunction region is seriously influenced.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solutions of the present invention can be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are within the scope of the present invention defined by the claims.
Claims (10)
1. A two-dimensional tellurium and transition metal sulfide PN junction type self-driven photodetector, comprising: the two-dimensional P-type semiconductor layer tellurium (1), the drain electrode (2), the two-dimensional N-type semiconductor layer transition metal sulfide (3), the source electrode (4) and the insulating substrate (5); the two-dimensional P-type semiconductor layer tellurium (1) is located at the upper end of one side of the insulating substrate (5), the drain electrode (2) is located at the upper end of the two-dimensional P-type semiconductor layer tellurium (1) and is not connected with the two-dimensional N-type semiconductor layer transition metal sulfide (3), the two-dimensional N-type semiconductor layer transition metal sulfide (3) is located above the two-dimensional P-type semiconductor layer tellurium (1) and extends towards the upper end of the other side of the insulating substrate (5), and the source electrode (4) is located at the upper end of the direct contact part of the two-dimensional N-type semiconductor layer transition metal sulfide (3) and the insulating substrate (5).
2. The two-dimensional tellurium and transition metal sulfide PN-junction self-driven photodetector as claimed in claim 1, wherein the thickness of the two-dimensional P-type semiconductor layer tellurium (1) is 5-15 nm.
3. The two-dimensional tellurium and transition metal sulfide PN junction self-driven photodetector as claimed in claim 1, wherein the drain electrode (2) comprises a bismuth, indium, chromium, titanium, aluminum or nickel electrode with a thickness of 40-100 nm.
4. The two-dimensional tellurium and transition metal sulfide PN-junction self-driven photodetector as claimed in claim 1, wherein the thickness of the two-dimensional N-type semiconductor layer transition metal sulfide (3) is 0.7-30 nm.
5. A two-dimensional tellurium and transition metal sulfide PN junction self-driven photodetector as claimed in claim 1, wherein said source electrode (4) comprises a gold, palladium or platinum electrode with a thickness of 40-100 nm.
6. The two-dimensional tellurium and transition metal sulfide PN junction self-driven photodetector as claimed in claim 1, wherein said insulating substrate (5) comprises a silicon-on-insulator substrate, a sapphire substrate or a glass substrate.
7. The method for producing a p-n junction type self-driven photodetector of two-dimensional tellurium and transition metal sulfide as claimed in any one of claims 1 to 6, comprising the steps of:
1) taking the two-dimensional tellurium nanosheets dispersed in the aqueous solution by using PDMS, transferring the two-dimensional tellurium nanosheets to the insulating substrate (5), heating, and removing the PDMS to obtain the two-dimensional P-type semiconductor layer tellurium (1);
2) coating a layer of organic glue on the surface of a two-dimensional N-type semiconductor layer transition metal sulfide nanosheet, transferring the two-dimensional N-type semiconductor layer transition metal sulfide nanosheet to a two-dimensional P-type semiconductor layer tellurium (1) in an organic glue auxiliary transfer mode, extending out a part of the organic glue to be in contact with an insulating substrate (5), and removing the organic glue to obtain a two-dimensional N-type semiconductor layer transition metal sulfide (3);
3) evaporating the source electrode (4) in a contact area of the two-dimensional N-type semiconductor layer transition metal sulfide (3) and the insulating substrate (5);
4) and evaporating the drain electrode (2) above the two-dimensional P-type semiconductor layer tellurium (1) to obtain the two-dimensional tellurium and transition metal sulfide PN junction type self-driven photoelectric detector.
8. The method according to claim 7, wherein the heating in step 1) is carried out at a temperature of 50 to 100 ℃ for 5 to 10 seconds.
9. The method of claim 7, wherein the organic glue in step 2) comprises PPC or PMMA; the organic glue is removed by dissolving with acetone.
10. The method according to claim 7, wherein the evaporation in step 3) and step 4) comprises thermal evaporation or electron beam evaporation.
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