CN207529954U - A kind of two dimension Van der Waals heterojunction photoelectric detector - Google Patents
A kind of two dimension Van der Waals heterojunction photoelectric detector Download PDFInfo
- Publication number
- CN207529954U CN207529954U CN201721095156.8U CN201721095156U CN207529954U CN 207529954 U CN207529954 U CN 207529954U CN 201721095156 U CN201721095156 U CN 201721095156U CN 207529954 U CN207529954 U CN 207529954U
- Authority
- CN
- China
- Prior art keywords
- dimensional semiconductor
- van der
- der waals
- dimensional
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
Abstract
This patent discloses a kind of two-dimentional Van der Waals heterojunction photoelectric detectors.Device architecture is followed successively by substrate, the heterojunction structure that two kinds of two-dimensional semiconductors are formed and metal source and drain electrodes from bottom to top.Prepare a kind of two-dimensional semiconductor on substrate first, another two-dimensional semiconductor is shifted on this basis to base semiconductor surface, two kinds of semiconductors are combined by Van der Waals force, form Van der Waals hetero-junctions, metal electrode is prepared with electron beam lithography combination lift-off technology again, ultimately forms Van der Waals heterojunction structure photodetector.Other two-dimensional material photodetectors are different from, structure preparation process is simple, at low cost, regulates and controls without grid voltage, and detection is realized under small bias, and power consumption is extremely low, and can expand explorer response wave band, improves sensitivity and realize quick response.
Description
Technical field
This patent is related to a kind of two-dimentional Van der Waals heterojunction photoelectric detector, refers specifically to a kind of two-dimentional Van der Waals hetero-junctions light
Electric explorer.
Background technology
PN junction is the basis of photodetection, in conventional semiconductors photodetector technique, it will usually utilize hetero-junctions
Mode enhances the performance of device, such as enhancing responsiveness, reduces dark current, improves response speed.In order to which forming properties are excellent
Hetero-junctions, the lattice constant match of two kinds of materials is extremely important.Lattice mismatch can lead to surface tomography so that generating a large amount of
Surface state, seriously affect device detection performance.In addition, conventional semiconductors still suffer from manufacturing cost is high, environment is unfriendly etc.
Problem.
Emerging two-dimensional material is the material that a kind of interlayer is combined with van der Waals interaction, as a kind of novel material
It is widely studied and is expected to apply in following photoelectric information device.Due to its ultra-thin thickness and high mobility, high light transmission
The advantageous properties such as property, are widely used in following nanoelectronics and opto-electronics.Single two-dimensional atomic crystal by
Be used to prepare photodetector, obtain larger responsiveness and detectivity [Advanced Materials, 2015,27
(42)].But based on the photoconductive detectors of such material, response speed can only achieve millisecond magnitude even second-time, and
And single material determines that detecting band is limited, seriously constrains application of the two-dimensional material in photodetection field.Two-dimentional model
Moral China hetero-junctions has the potentiality for realizing high-performance photodetection, and due to the weak model ylid bloom action power of interlayer, adjacent interlayer is not
It must be matched by lattice again and be limited, however, it would be possible to wilfulness matching；And due to not having ingredient transition, what is formed is heterogeneous
Knot is with precipitous carrier (potential field) gradient of atom level；By that will have the two-dimentional material of heterogeneity (electricity and optics etc.)
Material is combined by Van der Waals force, and coupling can generate new band structure [Nano Lett., 2017,17 (2)], pass through choosing
The property for selecting " new " material being composed carries out artificial regulatory [Physics Letters A, 2016,380 (33)]；With transition
Metal chalcogenide can generally form two class energy band relationships for the non-graphite alkene two-dimensional layer material of representative, thus using they as
The Van der Waals hetero-junctions that basis is built has high speed carrier separating capacity [ACS Nano, 2016,10 (3)]；In addition, ultra-thin two
Structure is tieed up, makes it have strong grid responding ability and the spy mutually compatible with conventional microelectronic processing technology and flexible substrates
Property.
Two-dimentional Van der Waals hetero-junctions has received significant attention and has achieved certain achievement in research.It is different using two-dimentional Van der Waals
Surface-interface effect, quantum size effect, quantum tunneling effect of matter knot etc. are expected to realize that the ultrafast broadband photoelectricity of superelevation is visited
It surveys.
Invention content
The advantages of to break through the application limitation of conventional semiconductor material, and combining Van der Waals hetero-junctions, this patent proposes
It is a kind of novel based on Van der Waals heterojunction photoelectric detector.Different two-dimensional semiconductors by Van der Waals force are combined, form model
Moral China hetero-junctions.The new structure can guarantee the quick response of device, superelevation gain and width while device size is reduced
Band detection.
This patent refers to one kind based on Van der Waals heterojunction photoelectric detector, including substrate 1, oxide skin(coating) 2, bottom two dimension half
Conductor 3 and top layer two-dimensional semiconductor 4, it is characterised in that：
The photodetector structure is followed successively by from bottom to top：Substrate 1, oxide skin(coating) 2,3 He of bottom two-dimensional semiconductor
Top layer two-dimensional semiconductor 4, bottom two-dimensional semiconductor 3 are located at the middle position on oxide skin(coating) 2, and top layer two-dimensional semiconductor 4 covers
Part base semiconductor 3 is simultaneously extended on oxide skin(coating) 2, and metal source 5 is on top layer two-dimensional semiconductor 4, and metal-drain 6 is the bottom of at
On layer two-dimensional semiconductor 4；Wherein：
The substrate 1 is the Si substrates of heavy doping；
The oxide skin(coating) 2 is SiO2, 285 ± 15 nanometers of thickness；
The bottom two-dimensional semiconductor 3 and top layer two-dimensional semiconductor 4 are MoS2、MoSe2、MoTe2、WS2、WSe2、SnS2
Or SnSe2In two different transition metal chalcogenide atomic layers, 1~10 nanometer of thickness；
The metal source 5 and metal-drain 6 are nickel, chromium, titanium, palladium, platinum or gold, and thickness is 5~100 nanometers.
This patent refers to a kind of based on Van der Waals heterojunction photoelectric detector and preparation method, it is characterised in that device prepares packet
Include following steps：
1) prepared by oxide skin(coating)
Oxide skin(coating) silica is prepared by thermal oxidation method on heavy doping Si substrates, thickness is 285 nanometers.
2) preparation of bottom two-dimensional semiconductor
Bottom two-dimensional semiconductor is transferred to by oxide skin(coating) SiO using mechanical stripping transfer method2Surface.
3) preparation of top layer two-dimensional semiconductor and Van der Waals hetero-junctions
The method of the mechanical stripping of top layer two-dimensional semiconductor 4 is prepared on another substrate, on the two-dimensional semiconductor
One layer of PVA film is covered, heating makes it be come into full contact with the two-dimensional semiconductor, removes the PVA film after cooling on substrate, this
When two-dimensional semiconductor adsorbed by PVA, move PVA film under the microscope so that top layer two-dimensional semiconductor is partly led with bottom two dimension
Body 3 is aligned, and heating makes its close contact, and sample is placed in ultra-pure water after cooling and is impregnated, is completely dissolved PVA, is so far prepared
Good two dimension Van der Waals hetero-junctions.
The PVA film, which is dissolved in by 3 grams of PVA powder in 100 milliliters of ultra-pure waters, is made 3% PVA solution, then be made thin
Film.
4) preparation of two-dimentional Van der Waals hetero-junctions source-drain electrode
Using ultraviolet photolithographic technology or electron beam lithography, source metal is being prepared with reference to thermal evaporation and stripping technology
Pole 4, drain electrode 5 form back grid structure Transition-metal dichalcogenide two-dimensional semiconductor fet structure device；Electrode for nickel, chromium,
Titanium, palladium, platinum or gold, thickness are 5~100 nanometers.
The advantages of this patent patent, is：This patent selects two kinds of two-dimensional semiconductor structure Van der Waals heterojunction structures to prepare two
Van der Waals heterojunction structure is tieed up, had not only maintained the characteristics such as independent two-dimensional semiconductor ultrathin, high light transmittance and high mobility, but also energy
New interlayer coupling and heterojunction characteristics are generated, detecting band is widened with this, accelerate speed of detection and reduces dark current.
Description of the drawings
Fig. 1 is two-dimentional Van der Waals heterojunction detector schematic cross-section.
In figure：
1- substrates, 2- oxide skin(coating)s, 3- bottoms two-dimensional semiconductor, 4- top layers two-dimensional semiconductor, 5- metal sources, 6- metals
Drain electrode.
Fig. 2 is energy band diagram after two-dimentional Van der Waals heterojunction photoelectric detector illumination.Figure (a) is optical transition signal after illumination
Figure；It is carrier moving schematic diagram caused by photo-induced voltage to scheme (b)；It is to remove Carrier recombination schematic diagram after illumination to scheme (c).
Fig. 3 two dimension Van der Waals heterojunction photoelectric detectors partial properties are shown.Figure (a) is that device rings 637 nanometers of light
It should；Figure (b) is the response time rising edge of device (illustration is the failing edge time).
Specific embodiment
It elaborates below in conjunction with the accompanying drawings to specific implementation of the patent mode：
This patent has developed two-dimentional Van der Waals heterojunction photoelectric detector.Pass through MoTe2And MoS2Form two-dimentional Van der Waals PN
Knot.Under PN junction cut-off state, the dark current of the detector can reach pico-ampere magnitude, and on-off ratio reaches five orders of magnitude, ring
Down to 60 microseconds between seasonable.
It is as follows：
1. substrate selects
The heavily-doped p-type silicon of 0.5 millimeter of thickness is selected as substrate.
2. prepared by medium of oxides layer
By thermal oxide hair in surface of silicon, 285 nano thickness silica of oxidation.
3. prepared by bottom two-dimensional semiconductor
With adhesive tape by transition metal chalcogenide MoS2Crystal mechanical stripping, after transfer them to SiO2On/Si substrates,
MoS27 nanometers of thickness.
4. top layer two-dimensional semiconductor shifts
By transition metal chalcogenide MoTe2It is removed on another substrate by step 3, thickness is 3 nanometers, by PVA film
Being covered in heating and melting on sample makes itself and MoTe2It comes into full contact with, is cooled to room temperature, remove PVA film, at this time MoTe2Nanometer thin
Piece is adsorbed on PVA, it is made to be aligned with the bottom two-dimensional semiconductor on substrate under the microscope, and heating causes with coming into full contact with,
Finally say that sample impregnates in ultra-pure water, until PVA is completely dissolved.So far it is prepared into two-dimentional MoTe2/MoS2Van der Waals hetero-junctions.
5. prepared by source electrode, drain electrode
Source electrode, drain electrode figure are prepared using electron beam exposure method；Metal electrode, chromium are prepared using thermal evaporation techniques
5 nanometers, 50 nanometers of gold；With reference to lift- bottoms two-dimensional semiconductor A off methods, stripping metal film obtains source electrode, drain electrode.
6. photoelectric respone is tested
With pulse laser (5.46mW, 1Hz) irradiating sample of 637 nano wave lengths, its electric current is tested in source electrode and drain electrode, by
Fig. 3 (a) can be seen that its dark current can reach pico-ampere magnitude, and on-off ratio reaches 105Magnitude, Fig. 3 (b) show the response of the detector
60 microseconds of Shi Yuewei, about 24 microsecond of Carrier Recombination.Compared to single two-dimensional semiconductor detector, which shows
Huge advantage.As a result illustrate this patent two dimension Van der Waals heterojunction photoelectric detector and preparation method thereof, which can have
Effect reduce dark current, improve device response time and and then improve low dimension semiconductor sensitive detection parts practicability.
Claims (1)
1. a kind of two dimension Van der Waals heterojunction photoelectric detector, including substrate (1), oxide skin(coating) (2), bottom two-dimensional semiconductor
(3) and top layer two-dimensional semiconductor (4), it is characterised in that：
The photodetector structure is followed successively by from bottom to top：Substrate (1), oxide skin(coating) (2), bottom two-dimensional semiconductor (3)
With top layer two-dimensional semiconductor (4), middle position of the bottom two-dimensional semiconductor (3) on oxide skin(coating) (2), top layer two dimension is partly led
Body (4) covering part base semiconductor (3) is simultaneously extended on oxide skin(coating) (2), and metal source (5) is in top layer two-dimensional semiconductor
(4) on, metal-drain (6) is on bottom two-dimensional semiconductor (3)；Wherein：
The substrate (1) is the Si substrates of heavy doping；
The oxide skin(coating) (2) is SiO2, 285 ± 15 nanometers of thickness；
The bottom two-dimensional semiconductor (3) and top layer two-dimensional semiconductor (4) are MoS2、MoSe2、MoTe2、WS2、WSe2、SnS2
Or SnSe2In two different transition metal chalcogenide atomic layers, 1~10 nanometer of thickness；
The metal source (5) and metal-drain (6) are nickel, chromium, titanium, palladium, platinum or gold, and thickness is 5~100 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721095156.8U CN207529954U (en) | 2017-08-30 | 2017-08-30 | A kind of two dimension Van der Waals heterojunction photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721095156.8U CN207529954U (en) | 2017-08-30 | 2017-08-30 | A kind of two dimension Van der Waals heterojunction photoelectric detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207529954U true CN207529954U (en) | 2018-06-22 |
Family
ID=62575181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721095156.8U Active CN207529954U (en) | 2017-08-30 | 2017-08-30 | A kind of two dimension Van der Waals heterojunction photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207529954U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN110729375A (en) * | 2019-09-10 | 2020-01-24 | 中国科学院上海技术物理研究所 | Efficient and rapid van der Waals heterojunction detector with unilateral depletion region and preparation method |
| CN110808309A (en) * | 2019-11-18 | 2020-02-18 | 中国科学院上海技术物理研究所 | Ferroelectric enhanced Van der Waals heterojunction polarization detector and preparation method thereof |
| CN110993703A (en) * | 2019-11-27 | 2020-04-10 | 中国科学院金属研究所 | GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN113205987A (en) * | 2021-04-07 | 2021-08-03 | 清华大学 | Planar photoinduced electron emission source based on multilayer two-dimensional material |
| CN114335209A (en) * | 2021-12-08 | 2022-04-12 | 华南师范大学 | Polarization sensitive photoelectric detector and preparation method thereof |
| CN114551632A (en) * | 2022-02-25 | 2022-05-27 | 北京科技大学 | PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and preparation method thereof |
| CN114784129A (en) * | 2022-04-01 | 2022-07-22 | 浙江芯科半导体有限公司 | High-sensitivity infrared polarized photoelectric detector and preparation method thereof |
| CN114944440A (en) * | 2022-06-17 | 2022-08-26 | 复旦大学 | Bionic visual nerve synapse device and preparation method thereof |
-
2017
- 2017-08-30 CN CN201721095156.8U patent/CN207529954U/en active Active
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749433B (en) * | 2017-08-30 | 2023-07-04 | 中国科学院上海技术物理研究所 | Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN110729375A (en) * | 2019-09-10 | 2020-01-24 | 中国科学院上海技术物理研究所 | Efficient and rapid van der Waals heterojunction detector with unilateral depletion region and preparation method |
| CN110729375B (en) * | 2019-09-10 | 2024-03-22 | 中国科学院上海技术物理研究所 | Efficient and rapid van der Waals heterojunction detector with unilateral depletion region and preparation method thereof |
| CN110808309A (en) * | 2019-11-18 | 2020-02-18 | 中国科学院上海技术物理研究所 | Ferroelectric enhanced Van der Waals heterojunction polarization detector and preparation method thereof |
| CN110993703A (en) * | 2019-11-27 | 2020-04-10 | 中国科学院金属研究所 | GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN110993703B (en) * | 2019-11-27 | 2021-09-24 | 中国科学院金属研究所 | GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN113205987A (en) * | 2021-04-07 | 2021-08-03 | 清华大学 | Planar photoinduced electron emission source based on multilayer two-dimensional material |
| CN114335209A (en) * | 2021-12-08 | 2022-04-12 | 华南师范大学 | Polarization sensitive photoelectric detector and preparation method thereof |
| CN114551632A (en) * | 2022-02-25 | 2022-05-27 | 北京科技大学 | PN junction type self-driven photoelectric detector of two-dimensional tellurium and transition metal sulfide and preparation method thereof |
| CN114784129A (en) * | 2022-04-01 | 2022-07-22 | 浙江芯科半导体有限公司 | High-sensitivity infrared polarized photoelectric detector and preparation method thereof |
| CN114784129B (en) * | 2022-04-01 | 2023-08-15 | 浙江芯科半导体有限公司 | High-sensitivity infrared polarized photoelectric detector and preparation method thereof |
| CN114944440A (en) * | 2022-06-17 | 2022-08-26 | 复旦大学 | Bionic visual nerve synapse device and preparation method thereof |
| CN114944440B (en) * | 2022-06-17 | 2024-03-05 | 复旦大学 | Bionic optic nerve synapse device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207529954U (en) | A kind of two dimension Van der Waals heterojunction photoelectric detector | |
| CN107749433A (en) | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof | |
| Ezhilmaran et al. | Recent developments in the photodetector applications of Schottky diodes based on 2D materials | |
| Amirmazlaghani et al. | Graphene-Si schottky IR detector | |
| CN105489693B (en) | Based on the sub- device of two-dimensional layer thin-film material p g n heterojunction photovoltaics | |
| An et al. | Self-powered ZnS nanotubes/Ag nanowires MSM UV photodetector with high on/off ratio and fast response speed | |
| JP6113372B1 (en) | Electromagnetic wave detector | |
| CN105762281A (en) | Ferroelectric local field enhanced two-dimensional semiconductor photoelectric detector and preparation method | |
| Dastgeer et al. | p‐GeSe/n‐ReS2 heterojunction rectifier exhibiting a fast photoresponse with ultra‐high frequency‐switching applications | |
| Oliva et al. | Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse | |
| CN107833940A (en) | A kind of opto-electronic device based on two-dimentional molybdenum disulfide rhenium disulfide hetero-junctions, preparation method and application | |
| CN107634090B (en) | Two-dimensional black phosphorus PN junction, and preparation method and application thereof | |
| Zheng et al. | Enormous enhancement in electrical performance of few-layered MoTe 2 due to Schottky barrier reduction induced by ultraviolet ozone treatment | |
| CN111312829A (en) | High-sensitivity negative-capacitance field effect transistor photoelectric detector and preparation method thereof | |
| CN107146815A (en) | A kind of Schottky gate field-effect transistor and preparation method and application | |
| Tran et al. | Photoresponsive properties of ultrathin silicon nanowires | |
| John et al. | Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors | |
| CN106024968A (en) | Graphene/carbon nanotube thin film schottky junction photoelectric detector and preparation method therefor | |
| Wang et al. | Photogating-controlled ZnO photodetector response for visible to near-infrared light | |
| Al-Hardan et al. | Low-intensity UV light sensor based on p-NiO/n-Si heterojunction | |
| TW202017219A (en) | Semiconductor structure, optoelectronic device, photodetector and spectrometer | |
| Yu et al. | Recent advances in wide-spectrum photodetectors based on low-dimensional semiconductors | |
| CN110148643A (en) | Surface photovoltage semiconductor-quantum-point of good performance/graphene Van der Waals knot thin film flexible device construction method | |
| Hao et al. | Deep ultraviolet detectors based on wide bandgap semiconductors: a review | |
| CN108963065A (en) | A kind of method that laser ablation prepares single layer multi-layer graphene pyroelectric detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |