CN110993703B - GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof - Google Patents
GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the field of photoelectric detectors, in particular to a GaN/MoS2A two-dimensional van der Waals heterojunction photoelectric detector and a preparation method thereof. The two-dimensional GaN nanosheets with the thicknesses of a plurality of atomic layers are prepared by using a moving printing auxiliary high-temperature ammoniation method of Ga liquid drops, and have the advantages of large size, high crystallization quality and simplicity in preparation. Meanwhile, the prepared two-dimensional GaN nanosheets are utilized to design GaN/MoS2Two-dimensional van der waals heterojunction photodetectors. The device structure of the photoelectric detector comprises an insulating substrate, two-dimensional GaN nanosheets and two-dimensional MoS from bottom to top in sequence2Nanosheets and metal electrodes. Two-dimensional GaN nanosheet and two-dimensional MoS2The nanosheets are provided with partially overlapping regions that form heterojunctions by van der waals interactions. The photoelectric detector can detect visible light and ultraviolet light simultaneously, and has high light responsivity and quick response time.
Description
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a GaN/MoS2A two-dimensional van der Waals heterojunction photoelectric detector and a preparation method thereof.
Background
The photoelectric detector is a detector made by utilizing the absorption of a semiconductor to light and the photo-thermal effect such as photoconduction, photovoltaic and photo-thermal effect generated by the absorption of the semiconductor, can convert an external light signal into an electric signal, and has important application in the fields of chemical and biological sensing detection, information and the like. At present, nano materials are considered to be important basic composition units for constructing future high-performance nano devices due to small characteristic size, large specific surface area, high carrier mobility and high photoelectric conversion efficiency. Therefore, the photoelectric detector prepared by the nano material draws more and more attention and shows good application prospect.
At a plurality of nanometersAmong materials, two-dimensional materials typified by graphene have been receiving strong attention in recent years. However, the light absorption efficiency of single-layer graphene is only 2%, and factors such as lack of band gap and large leakage current hinder the application of the single-layer graphene in photoelectric devices. Therefore, finding a graphene-like alternative material is also one of the current research hotspots. MoS, a typical Transition Metal Dichalcogenide (TMDCs)2As an ultrathin two-dimensional semiconductor, the material has higher carrier mobility (410 cm)2 V-1s-1) And a small optical band gap (1.8eV), is an ideal material for making visible and even near infrared photodetectors. However, single or few layer MoS currently made with it2The response time of the photoelectric detector in visible light is generally from several seconds to tens of seconds, and the photoresponse is only the magnitude order of mA/W, which greatly limits MoS2Application in the field of optoelectronics. If we add another two-dimensional semiconductor photoelectric material with higher carrier mobility and wide forbidden band and MoS2The Van der Waals heterojunction is constructed, so that the separation efficiency of the photon-generated carriers can be improved, the photoresponse and the response time can be further improved, and the photoresponse range of the photoelectric detector can be widened.
The GaN has very high electronic saturation velocity, high melting point, very high breakdown electric field and stable physical and chemical characteristics, and the ultraviolet photoelectric detector manufactured by the GaN can well work under extreme conditions of high temperature, aerospace, military and the like. At present, the photoresponse of the photoelectric detector prepared based on GaN can reach 107AW-1The response time is less than 26 ms. Therefore, if the GaN has high response characteristic to ultraviolet light and high carrier mobility and MoS2The combination of high sensitivity to visible light can be used to improve MoS by integrating multiple functions with different characteristics2The photoelectric performance is insufficient. However, due to the non-layered structure of the GaN material, the preparation of two-dimensional GaN nano-material and GaN/MoS are provided2The construction of two-dimensional van der waals heterojunction photodetectors presents significant challenges.
Disclosure of Invention
To solve the above difficulties, the present invention is toProvides a GaN/MoS with simple preparation process, high responsivity and quick photoresponse time, and has photoresponse to ultraviolet light and visible light wave bands2A two-dimensional van der Waals heterojunction photoelectric detector and a preparation method thereof.
The technical scheme of the invention is as follows:
GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector sequentially comprises an insulating substrate, and two-dimensional GaN nanosheets and two-dimensional MoS formed on the insulating substrate from bottom to top2Nanosheets, and GaN nanosheets and MoS2The nano-sheets do not overlap the metal electrodes deposited at the two ends; two-dimensional MoS2The nano-sheet part covers the two-dimensional GaN nano-sheet, the two-dimensional GaN nano-sheet and the two-dimensional MoS2Partial overlapping areas are arranged among the nano sheets, heterojunction is formed in the partial overlapping areas through van der Waals force interaction, and the two parallel metal electrodes respectively cover the two-dimensional GaN nano sheets and the two-dimensional MoS2And (4) nano-chips.
The GaN/MoS2The two-dimensional van der Waals heterojunction photoelectric detector has insulating substrate of SiO2/Si、Al2O3Or Si3N4。
The GaN/MoS2Two-dimensional van der Waals heterojunction photodetector, two-dimensional GaN nanosheet, and two-dimensional MoS2The thickness of the nano-sheets is less than 10nm, and the diameter of the nano-sheets is 2-100 mu m.
The GaN/MoS2Two-dimensional Van der Waals heterojunction photoelectric detector, two-dimensional GaN nanosheet is n-type semiconductor, and two-dimensional MoS2The nano-sheet is an n-type or p-type semiconductor.
The GaN/MoS2The two-dimensional van der Waals heterojunction photoelectric detector has metal electrodes of Ti/Au, Cr/Au, Ni/Au, Au or Ag and respectively covered with GaN nanosheets and MoS2The nano sheets are arranged at the two ends which are not overlapped, and the thickness of the metal electrode is 10-100 nm.
The GaN/MoS2The preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector comprises the following steps:
step 1: coating metal Ga on the adhesive tape, and heating the metal Ga to the melting point of 29.8 ℃ so as to melt the metal Ga into liquid to form metal Ga liquid drops;
step 2: contacting the metal Ga liquid drop with a polydimethylsiloxane substrate, and controlling the metal Ga liquid drop on the adhesive tape to move and print on the polydimethylsiloxane so as to prepare large-area two-dimensional amorphous gallium oxide on the polydimethylsiloxane;
and step 3: controlling polydimethylsiloxane to load on the contact surface insulating substrate, and transferring the two-dimensional amorphous gallium oxide on the polydimethylsiloxane to the insulating substrate;
and 4, step 4: transferring the two-dimensional amorphous gallium oxide and the insulating substrate to a tube furnace, vacuumizing the tube furnace, heating the tube furnace to 700-850 ℃, introducing protective gas and reaction gas, and preserving heat to obtain ultrathin two-dimensional GaN nanosheets;
and 5: MoS block by using adhesive tape2Peeling to form a thin layer, and then MoS2Transfer from tape to polydimethylsiloxane; searching for two-dimensional MoS with 1-10 layers of layers from polydimethylsiloxane by using an optical microscope2Nanosheets; two-dimensional MoS on polydimethylsiloxane2Stacking the nanosheets onto the prepared two-dimensional GaN nanosheets;
step 6: by combining the photoetching technology with the electron beam evaporation technology, the GaN nanosheets and the MoS are respectively coated with the organic silicon2And depositing metal electrodes at two non-overlapping ends of the nano sheets.
The GaN/MoS2In the preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector, in the step 1, the diameter of a metal Ga liquid drop is 1-10 mm.
The GaN/MoS2According to the preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector, in the step 3, the loading force is 1-5N.
The GaN/MoS2The preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector comprises the step 4, wherein the vacuum degree of vacuumizing is 1-10-2Pa。
The GaN/MoS2A preparation method of a two-dimensional van der Waals heterojunction photoelectric detector comprises the step 4 of using Ar gas or N with the flow rate of 2-10 sccm as protective gas2Gas, reaction gas is flow2-50 sccm of ammonia gas, and the heat preservation time is 2-10 minutes.
The design idea of the invention is as follows:
the core idea of the design of the present invention is that, on the one hand, the van der Waals heterostructure designed by the present invention employs a wide band gap (E)g3.4eV) having a two-dimensional structure and high carrier mobility, as an ultraviolet light absorbing layer, to overcome two-dimensional MoS2The nano-sheet has the defects of low ultraviolet light absorptivity, high recombination rate of photo-generated electron-hole pairs, low carrier mobility and the like. High quality GaN/MoS2Two-dimensional van der waals heterostructures are incorporated into ultraviolet-visible photodetectors. The characteristics of ultra-thin thickness, specific spectral absorptivity, high carrier mobility and the like of a single two-dimensional semiconductor material are maintained, and a new interlayer coupling effect and heterojunction characteristics can be generated, so that the detection waveband is widened and the dark current is reduced. Simultaneously, n-type GaN and p-type MoS2The formed pn junction is beneficial to the separation of photo-generated electron-hole pairs, and can accelerate the photoresponse time of the photoelectric detector and improve the photoresponse. On the other hand, the GaN nanosheet with high crystal quality, large size and thin thickness is prepared in a mode of oxidizing and printing liquid Ga metal and assisting subsequent nitridation. The method has simple process and low cost, and is beneficial to large-scale commercial application.
Compared with the prior art, the GaN/MoS of the invention2The advantages of the two-dimensional van der waals heterojunction photodetector are:
1) the two-dimensional GaN nanosheet prepared by the method has the advantages of large size, simple process and good crystallization quality, and can be prepared in a large area and in batches. Meanwhile, GaN and MoS are selected for use in the invention2The van der Waals heterostructure is constructed by the two-dimensional semiconductor nano materials, so that the excellent physical properties of the two-dimensional materials are kept, and a new interlayer coupling effect and a new heterojunction property can be generated. The photoelectric detector of the invention has simple structure, easy preparation and excellent photoelectric property, and can be widely used for weak light detection, ultraviolet-visible light detection and the like.
2) The two-dimensional GaN nanosheet prepared by the method has excellent photoresponse to ultraviolet light, and is subjected to Van der Waals force and two-dimensional reactionMoS2Formation of heterojunction, on the one hand improved MoS2Low light responsivity and long response time, and broadens MoS2Response to ultraviolet light.
3) GaN/MoS designed by the invention2The heterostructure can effectively promote the separation of photo-generated electron-hole pairs, inhibit the recombination between electrons and holes, and further greatly improve the light responsivity while reducing the light responsivity. GaN/MoS designed by the invention2The response time of a two-dimensional van der Waals heterojunction photodetector to ultraviolet light and visible light is in the order of milliseconds, while the response time of a traditional MoS2The response time of the photodetector is generally several seconds to tens of seconds. GaN/MoS designed by the invention2The responsivity of the two-dimensional Van der Waals heterojunction photoelectric detector to ultraviolet light and visible light is tens to hundreds of A/W, compared with the traditional MoS2The photo-detector has a light responsivity to visible light which is generally in the order of mA/W.
Drawings
FIG. 1 is a GaN/MoS2Schematic diagram of three-dimensional structure of two-dimensional van der Waals heterojunction photoelectric detector. In the figure, (1) SiO2a/Si substrate; (2) n-type two-dimensional GaN nanosheets; (3) p-type two-dimensional MoS2Nanosheets; (4) Ti/Au metal electrodes.
In FIG. 2, (a) is a Scanning Electron Microscope (SEM) photograph of two-dimensional GaN nanosheets, and (b) is an Atomic Force Microscope (AFM) photograph of two-dimensional GaN nanosheets.
In FIG. 3, (a) is GaN/MoS2An optical photograph of a two-dimensional van der waals heterojunction photodetector, and (b) a height variation curve scanned along a straight line in the graph (a) by an atomic force microscope.
FIG. 4 is a GaN/MoS2The schematic diagram of the energy band structure and the photon-generated carrier transportation when the two-dimensional van der Waals heterojunction photoelectric detector is simultaneously irradiated by ultraviolet light and applied with forward bias.
FIG. 5 is a GaN/MoS2I-V curve of two-dimensional Van der Waals heterojunction photodetector under dark state condition.
FIG. 6 is GaN/MoS2I-V curves of two-dimensional Van der Waals heterojunction photodetectors under 365nm and 532nm wavelength illumination in the dark state.
In FIG. 7, (a) is GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector is under 365nm wavelength illumination, the I-V curve of different illumination intensity, (b) is the photoelectric detector under 532nm wavelength illumination, the I-V curve of different illumination intensity.
In FIG. 8, (a) is GaN/MoS2A transient optical response curve of the two-dimensional van der waals heterojunction photoelectric detector under 365nm wavelength illumination, and (b) a transient optical response curve of the photoelectric detector under 532nm wavelength illumination.
The specific implementation mode is as follows:
in the specific implementation process, the two-dimensional GaN nanosheet with the thickness of a plurality of atomic layers is prepared by using a moving printing auxiliary high-temperature ammoniation method of Ga liquid drops, and the two-dimensional GaN nanosheet has the advantages of large size, high crystallization quality and simplicity in preparation. Meanwhile, the prepared two-dimensional GaN nanosheets are utilized to design GaN/MoS2Two-dimensional van der waals heterojunction photodetectors. The device structure of the photoelectric detector comprises an insulating substrate, two-dimensional GaN nanosheets and two-dimensional MoS from bottom to top in sequence2Nanosheets and metal electrodes. Two-dimensional GaN nanosheet and two-dimensional MoS2The nanosheets are provided with partially overlapping regions that form heterojunctions by van der waals interactions.
The invention is further described with reference to the following figures and specific embodiments.
Example (b):
in this example, GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector and the preparation method thereof are as follows:
1) metal Ga was coated on the tape and heated to its melting point of 29.8 ℃ to melt it into a liquid state, forming droplets of metal Ga of about 5mm in diameter.
2) Preparing a Polydimethylsiloxane (PDMS) bulk flexible substrate with the surface size of 2cm multiplied by 2cm, enabling metal Ga drops adhered on an adhesive tape to be in contact with the PDMS substrate, applying pressure of about 1N and controlling the metal Ga drops on the adhesive tape to move and print on the PDMS. The flowing metal Ga liquid drops react with oxygen in the air and adsorbed oxygen on the surface of PDMS to form two-dimensional amorphous gallium oxide (Ga)2O3) Nano-sheet. Two-dimensional amorphous Ga2O3The nanosheets are adsorbed on the surface of PDMS due to strong adhesion force with the PDMS, and residual liquid Ga metal is taken away along with the printing process, so that large-area two-dimensional amorphous Ga is prepared on the PDMS2O3Nanosheets.
3) PDMS is controlled to contact SiO with a certain loading force of 1.5N2A Si substrate, two-dimensional amorphous Ga on PDMS2O3Transfer of nanosheets to SiO2a/Si substrate. Wherein, SiO2the/Si substrate is a Si substrate on which SiO with the thickness of 300nm is deposited2。
4) Will be transferred to SiO2Two-dimensional amorphous Ga of/Si substrate2O3Placing the nano-sheets in the center of a tube furnace, pumping the tube furnace to 0.1Pa, heating the tube furnace to 800 ℃, and introducing 3 standard milliliters of Ar gas per minute (sccm) and 5sccm ammonia gas (NH)3) And preserving the heat for 10 minutes, and naturally cooling to obtain the ultrathin (average thickness of 6.48nm and layer number of 12 layers) n-type two-dimensional GaN nanosheets.
5) Using adhesive tape to make block p-type MoS2Peeling to form a thin layer, and then MoS2Transfer from tape to PDMS. Searching p-type two-dimensional MoS with thickness below 10nm from PDMS by using an optical microscope2Nanosheets. MoS in the present example2The thickness of the nano-sheet is 7.97nm, and the number of layers is 12. P-type two-dimensional MoS on PDMS (polydimethylsiloxane) by utilizing micro mechanical arm2One part of the nano sheets is stacked on the prepared n-type two-dimensional GaN nano sheets, and the other part is directly stacked on SiO2On a/Si substrate. The technical index requirements of the micro mechanical arm are as follows: the miniature mechanical arm can firmly fix the glass slide, the XYZ three-axis of the glass slide is adjustable, and the stroke is 15 mm. The adhesive tape is Scotch transparent adhesive tape produced by American 3M company.
6) By combining photoetching technology with electron beam evaporation technology, n-type two-dimensional GaN nanosheets and p-type two-dimensional MoS2Ti/Au metal electrodes are deposited at two ends of the nano-sheets without overlapping to obtain the final GaN/MoS2Two-dimensional van der waals heterojunction photodetectors (see figure 1).
Referring to FIG. 1, a GaN/MoS of the present invention2Two-dimensional van der Waals heterojunction lightThe electric detector sequentially comprises SiO from bottom to top2a/Si substrate (1), and formed on SiO2N-type two-dimensional GaN nanosheet (2) and p-type two-dimensional MoS on/Si substrate (1)2Nanosheet (3), and use thereof in n-type two-dimensional GaN nanosheet (2) and p-type two-dimensional MoS2The nano-sheets (3) do not overlap the Ti/Au metal electrodes (4) deposited at the two ends. P-type two-dimensional MoS2The nano-sheet (3) is partially covered on the n-type two-dimensional GaN nano-sheet (2), and two relatively parallel Ti/Au metal electrodes (4) are respectively covered on the n-type two-dimensional GaN nano-sheet (2) and the p-type two-dimensional MoS2The nano-sheets (3). The Ti/Au metal electrode is a Ti and Au double-layer composite electrode, the thickness of the Ti layer is 5nm, and the thickness of the Au layer is 30 nm.
Referring to fig. 2, it can be seen from SEM photograph of two-dimensional GaN nanosheets that the prepared GaN nanosheets have very large size (hundreds of microns or more) and good continuity, and from AFM photograph it can be seen that the surface is flat and the thickness is only a few nanometers.
Referring to FIG. 3, from GaN/MoS2It can be seen from the optical photograph of the two-dimensional van der Waals p-n heterojunction photodetector that the GaN nanosheet is partially covered on the MoS2Surface, GaN and MoS, as seen by AFM2Is only a few nanometers thick.
Referring to FIG. 4, from GaN/MoS2The energy level arrangement of the heterojunction is favorable for the rapid and effective separation and transfer of photogenerated electrons and holes, thereby improving the photoresponse and reducing the photoresponse time. Wherein the solid spheres represent electrons and the hollow spheres represent holes.
Referring to fig. 5, it can be seen from the dark state IV characteristic curve that the p-n heterojunction photodetector has very good rectification characteristic and a small turn-on voltage (1.5V).
Referring to fig. 6, it can be seen from the IV characteristic that the photodetector maintains very good rectification characteristics after 365nm and 532nm illumination. Under the illumination of 365nm and 532nm wavelength, the optical fiber has larger photocurrent gain and good ultraviolet and visible light response characteristics.
Refer to the drawingsFrom GaN/MoS 72The I-V curves of the two-dimensional Van der Waals heterojunction photoelectric detector under 365nm and 532nm wavelength illumination with different illumination intensities can show that the photocurrent gradually increases with the increase of the incident light power, which shows that the photoelectric detector of the invention is very sensitive to the intensities of ultraviolet light and visible light. Through calculation, the photoresponse of the photoelectric detector of the invention to 365nm ultraviolet light is as high as 27A/W, and the external quantum efficiency and specific detectivity can respectively reach 9.2 multiplied by 103% and 6.6X 108Jones. The light responsivity to visible light of 532nm can be up to 330A/W, and the external quantum efficiency and specific detectivity can be respectively up to 7.6X 104% and 2.0X 1011Jones。
Referring to fig. 8, it can be seen from the transient optical response curve of the device that the photodetector of the present invention has stable light/dark current, fast optical response time (the ultraviolet response time is about 300ms, and the visible response time is about 400ms), high on-state repeatability, and extremely excellent photoelectric signal conversion and switching characteristics.
The results of the examples show that compared to conventional two-dimensional MoS2Photodetector, GaN/MoS of the invention2The two-dimensional Van der Waals heterojunction photoelectric detector has high light responsivity to visible light, and also has high light responsivity and detection sensitivity to ultraviolet light. Also, the optical response time is faster than that of the conventional two-dimensional MoS2Photodetectors (commonly on the order of seconds). The device of the photoelectric detector is simple to prepare, and is beneficial to obtaining wider application in the field of photoelectric detectors.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modifications or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector is characterized by sequentially comprising an insulating substrate and an insulating substrate from bottom to topTwo-dimensional GaN nanosheet and two-dimensional MoS formed on insulating substrate2Nanosheets, and GaN nanosheets and MoS2The nano-sheets do not overlap the metal electrodes deposited at the two ends; two-dimensional MoS2The nano-sheet part covers the two-dimensional GaN nano-sheet, the two-dimensional GaN nano-sheet and the two-dimensional MoS2Partial overlapping areas are arranged among the nano sheets, heterojunction is formed in the partial overlapping areas through van der Waals force interaction, and the two parallel metal electrodes respectively cover the two-dimensional GaN nano sheets and the two-dimensional MoS2Nano-sheets;
the GaN/MoS2The preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector comprises the following steps:
step 1: coating metal Ga on the adhesive tape, and heating the metal Ga to the melting point of 29.8 ℃ so as to melt the metal Ga into liquid to form metal Ga liquid drops;
step 2: contacting the metal Ga liquid drop with a polydimethylsiloxane substrate, and controlling the metal Ga liquid drop on the adhesive tape to move and print on the polydimethylsiloxane so as to prepare large-area two-dimensional amorphous gallium oxide on the polydimethylsiloxane;
and step 3: controlling polydimethylsiloxane to load on the contact surface insulating substrate, and transferring the two-dimensional amorphous gallium oxide on the polydimethylsiloxane to the insulating substrate;
and 4, step 4: transferring the two-dimensional amorphous gallium oxide and the insulating substrate to a tube furnace, vacuumizing the tube furnace, heating the tube furnace to 700-850 ℃, introducing protective gas and reaction gas, and preserving heat to obtain ultrathin two-dimensional GaN nanosheets;
and 5: MoS block by using adhesive tape2Peeling to form a thin layer, and then MoS2Transfer from tape to polydimethylsiloxane; searching for two-dimensional MoS with 1-10 layers of layers from polydimethylsiloxane by using an optical microscope2Nanosheets; two-dimensional MoS on polydimethylsiloxane2Stacking the nanosheets onto the prepared two-dimensional GaN nanosheets;
step 6: by combining the photoetching technology with the electron beam evaporation technology, the GaN nanosheets and the MoS are respectively coated with the organic silicon2And depositing metal electrodes at two non-overlapping ends of the nano sheets.
2. The GaN/MoS of claim 12The two-dimensional Van der Waals heterojunction photoelectric detector is characterized in that the insulating substrate material is SiO2/Si、Al2O3Or Si3N4。
3. The GaN/MoS of claim 12The two-dimensional Van der Waals heterojunction photoelectric detector is characterized by two-dimensional GaN nanosheets and two-dimensional MoS2The thickness of the nano-sheets is less than 10nm, and the diameter of the nano-sheets is 2-100 mu m.
4. The GaN/MoS of claim 12The two-dimensional Van der Waals heterojunction photoelectric detector is characterized in that the two-dimensional GaN nanosheet is an n-type semiconductor and is a two-dimensional MoS2The nano-sheet is an n-type or p-type semiconductor.
5. The GaN/MoS of claim 12The two-dimensional van der Waals heterojunction photoelectric detector is characterized in that the metal electrode is Ti/Au, Cr/Au, Ni/Au, Au or Ag and respectively covers the GaN nanosheet and the MoS2The nano sheets are arranged at the two ends which are not overlapped, and the thickness of the metal electrode is 10-100 nm.
6. The GaN/MoS of claim 12The two-dimensional Van der Waals heterojunction photoelectric detector is characterized in that in the step 1, the diameter of a metal Ga liquid drop is 1-10 mm.
7. The GaN/MoS of claim 12The two-dimensional van der Waals heterojunction photoelectric detector is characterized in that in the step 3, the loading force of polydimethylsiloxane to the insulating substrate is 1-5N.
8. The GaN/MoS of claim 12The two-dimensional Van der Waals heterojunction photoelectric detector is characterized in that in the step 4, the vacuum degree of vacuumizing is 1-10-2Pa。
9. The GaN/MoS of claim 12The two-dimensional Van der Waals heterojunction photoelectric detector is characterized in that in the step 4, the protective gas is Ar gas or N gas with the flow rate of 2-10 sccm2And the reaction gas is ammonia gas with the flow rate of 2-50 sccm, and the heat preservation time is 2-10 minutes.
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| CN113759150B (en) * | 2021-09-09 | 2024-05-28 | 哈尔滨工业大学 | Method for in-situ testing of electrical property of heterojunction of two-dimensional material under electric field coupling KPFM |
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| CN114759104B (en) * | 2022-03-29 | 2024-01-30 | 华南师范大学 | Near-infrared polarized photoelectric detector based on II-type van der Waals heterojunction and preparation method thereof |
| CN114864709A (en) * | 2022-04-18 | 2022-08-05 | 华南理工大学 | Photoelectric detector and preparation method and application thereof |
| CN114879002B (en) * | 2022-05-07 | 2023-03-24 | 北京科技大学 | Single-pixel image recognition system based on Van der Waals photoelectric detector |
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