CN110993703B - A GaN/MoS2 two-dimensional van der Waals heterojunction photodetector and its preparation method - Google Patents

A GaN/MoS2 two-dimensional van der Waals heterojunction photodetector and its preparation method Download PDF

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CN110993703B
CN110993703B CN201911185895.XA CN201911185895A CN110993703B CN 110993703 B CN110993703 B CN 110993703B CN 201911185895 A CN201911185895 A CN 201911185895A CN 110993703 B CN110993703 B CN 110993703B
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张兴来
刘宝丹
李晶
张建
马宗义
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Institute of Metal Research of CAS
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    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
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Abstract

The invention relates to the field of photoelectric detectors, in particular to a GaN/MoS2A two-dimensional van der Waals heterojunction photoelectric detector and a preparation method thereof. The two-dimensional GaN nanosheets with the thicknesses of a plurality of atomic layers are prepared by using a moving printing auxiliary high-temperature ammoniation method of Ga liquid drops, and have the advantages of large size, high crystallization quality and simplicity in preparation. Meanwhile, the prepared two-dimensional GaN nanosheets are utilized to design GaN/MoS2Two-dimensional van der waals heterojunction photodetectors. The device structure of the photoelectric detector comprises an insulating substrate, two-dimensional GaN nanosheets and two-dimensional MoS from bottom to top in sequence2Nanosheets and metal electrodes. Two-dimensional GaN nanosheet and two-dimensional MoS2The nanosheets are provided with partially overlapping regions that form heterojunctions by van der waals interactions. The photoelectric detector can detect visible light and ultraviolet light simultaneously, and has high light responsivity and quick response time.

Description

GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a GaN/MoS2A two-dimensional van der Waals heterojunction photoelectric detector and a preparation method thereof.
Background
The photoelectric detector is a detector made by utilizing the absorption of a semiconductor to light and the photo-thermal effect such as photoconduction, photovoltaic and photo-thermal effect generated by the absorption of the semiconductor, can convert an external light signal into an electric signal, and has important application in the fields of chemical and biological sensing detection, information and the like. At present, nano materials are considered to be important basic composition units for constructing future high-performance nano devices due to small characteristic size, large specific surface area, high carrier mobility and high photoelectric conversion efficiency. Therefore, the photoelectric detector prepared by the nano material draws more and more attention and shows good application prospect.
At a plurality of nanometersAmong materials, two-dimensional materials typified by graphene have been receiving strong attention in recent years. However, the light absorption efficiency of single-layer graphene is only 2%, and factors such as lack of band gap and large leakage current hinder the application of the single-layer graphene in photoelectric devices. Therefore, finding a graphene-like alternative material is also one of the current research hotspots. MoS, a typical Transition Metal Dichalcogenide (TMDCs)2As an ultrathin two-dimensional semiconductor, the material has higher carrier mobility (410 cm)2 V-1s-1) And a small optical band gap (1.8eV), is an ideal material for making visible and even near infrared photodetectors. However, single or few layer MoS currently made with it2The response time of the photoelectric detector in visible light is generally from several seconds to tens of seconds, and the photoresponse is only the magnitude order of mA/W, which greatly limits MoS2Application in the field of optoelectronics. If we add another two-dimensional semiconductor photoelectric material with higher carrier mobility and wide forbidden band and MoS2The Van der Waals heterojunction is constructed, so that the separation efficiency of the photon-generated carriers can be improved, the photoresponse and the response time can be further improved, and the photoresponse range of the photoelectric detector can be widened.
The GaN has very high electronic saturation velocity, high melting point, very high breakdown electric field and stable physical and chemical characteristics, and the ultraviolet photoelectric detector manufactured by the GaN can well work under extreme conditions of high temperature, aerospace, military and the like. At present, the photoresponse of the photoelectric detector prepared based on GaN can reach 107AW-1The response time is less than 26 ms. Therefore, if the GaN has high response characteristic to ultraviolet light and high carrier mobility and MoS2The combination of high sensitivity to visible light can be used to improve MoS by integrating multiple functions with different characteristics2The photoelectric performance is insufficient. However, due to the non-layered structure of the GaN material, the preparation of two-dimensional GaN nano-material and GaN/MoS are provided2The construction of two-dimensional van der waals heterojunction photodetectors presents significant challenges.
Disclosure of Invention
To solve the above difficulties, the present invention is toProvides a GaN/MoS with simple preparation process, high responsivity and quick photoresponse time, and has photoresponse to ultraviolet light and visible light wave bands2A two-dimensional van der Waals heterojunction photoelectric detector and a preparation method thereof.
The technical scheme of the invention is as follows:
GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector sequentially comprises an insulating substrate, and two-dimensional GaN nanosheets and two-dimensional MoS formed on the insulating substrate from bottom to top2Nanosheets, and GaN nanosheets and MoS2The nano-sheets do not overlap the metal electrodes deposited at the two ends; two-dimensional MoS2The nano-sheet part covers the two-dimensional GaN nano-sheet, the two-dimensional GaN nano-sheet and the two-dimensional MoS2Partial overlapping areas are arranged among the nano sheets, heterojunction is formed in the partial overlapping areas through van der Waals force interaction, and the two parallel metal electrodes respectively cover the two-dimensional GaN nano sheets and the two-dimensional MoS2And (4) nano-chips.
The GaN/MoS2The two-dimensional van der Waals heterojunction photoelectric detector has insulating substrate of SiO2/Si、Al2O3Or Si3N4。
The GaN/MoS2Two-dimensional van der Waals heterojunction photodetector, two-dimensional GaN nanosheet, and two-dimensional MoS2The thickness of the nano-sheets is less than 10nm, and the diameter of the nano-sheets is 2-100 mu m.
The GaN/MoS2Two-dimensional Van der Waals heterojunction photoelectric detector, two-dimensional GaN nanosheet is n-type semiconductor, and two-dimensional MoS2The nano-sheet is an n-type or p-type semiconductor.
The GaN/MoS2The two-dimensional van der Waals heterojunction photoelectric detector has metal electrodes of Ti/Au, Cr/Au, Ni/Au, Au or Ag and respectively covered with GaN nanosheets and MoS2The nano sheets are arranged at the two ends which are not overlapped, and the thickness of the metal electrode is 10-100 nm.
The GaN/MoS2The preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector comprises the following steps:
step 1: coating metal Ga on the adhesive tape, and heating the metal Ga to the melting point of 29.8 ℃ so as to melt the metal Ga into liquid to form metal Ga liquid drops;
step 2: contacting the metal Ga liquid drop with a polydimethylsiloxane substrate, and controlling the metal Ga liquid drop on the adhesive tape to move and print on the polydimethylsiloxane so as to prepare large-area two-dimensional amorphous gallium oxide on the polydimethylsiloxane;
and step 3: controlling polydimethylsiloxane to load on the contact surface insulating substrate, and transferring the two-dimensional amorphous gallium oxide on the polydimethylsiloxane to the insulating substrate;
and 4, step 4: transferring the two-dimensional amorphous gallium oxide and the insulating substrate to a tube furnace, vacuumizing the tube furnace, heating the tube furnace to 700-850 ℃, introducing protective gas and reaction gas, and preserving heat to obtain ultrathin two-dimensional GaN nanosheets;
and 5: MoS block by using adhesive tape2Peeling to form a thin layer, and then MoS2Transfer from tape to polydimethylsiloxane; searching for two-dimensional MoS with 1-10 layers of layers from polydimethylsiloxane by using an optical microscope2Nanosheets; two-dimensional MoS on polydimethylsiloxane2Stacking the nanosheets onto the prepared two-dimensional GaN nanosheets;
step 6: by combining the photoetching technology with the electron beam evaporation technology, the GaN nanosheets and the MoS are respectively coated with the organic silicon2And depositing metal electrodes at two non-overlapping ends of the nano sheets.
The GaN/MoS2In the preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector, in the step 1, the diameter of a metal Ga liquid drop is 1-10 mm.
The GaN/MoS2According to the preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector, in the step 3, the loading force is 1-5N.
The GaN/MoS2The preparation method of the two-dimensional Van der Waals heterojunction photoelectric detector comprises the step 4, wherein the vacuum degree of vacuumizing is 1-10-2Pa。
The GaN/MoS2A preparation method of a two-dimensional van der Waals heterojunction photoelectric detector comprises the step 4 of using Ar gas or N with the flow rate of 2-10 sccm as protective gas2Gas, reaction gas is flow2-50 sccm of ammonia gas, and the heat preservation time is 2-10 minutes.
The design idea of the invention is as follows:
the core idea of the design of the present invention is that, on the one hand, the van der Waals heterostructure designed by the present invention employs a wide band gap (E)g3.4eV) having a two-dimensional structure and high carrier mobility, as an ultraviolet light absorbing layer, to overcome two-dimensional MoS2The nano-sheet has the defects of low ultraviolet light absorptivity, high recombination rate of photo-generated electron-hole pairs, low carrier mobility and the like. High quality GaN/MoS2Two-dimensional van der waals heterostructures are incorporated into ultraviolet-visible photodetectors. The characteristics of ultra-thin thickness, specific spectral absorptivity, high carrier mobility and the like of a single two-dimensional semiconductor material are maintained, and a new interlayer coupling effect and heterojunction characteristics can be generated, so that the detection waveband is widened and the dark current is reduced. Simultaneously, n-type GaN and p-type MoS2The formed pn junction is beneficial to the separation of photo-generated electron-hole pairs, and can accelerate the photoresponse time of the photoelectric detector and improve the photoresponse. On the other hand, the GaN nanosheet with high crystal quality, large size and thin thickness is prepared in a mode of oxidizing and printing liquid Ga metal and assisting subsequent nitridation. The method has simple process and low cost, and is beneficial to large-scale commercial application.
Compared with the prior art, the GaN/MoS of the invention2The advantages of the two-dimensional van der waals heterojunction photodetector are:
1) the two-dimensional GaN nanosheet prepared by the method has the advantages of large size, simple process and good crystallization quality, and can be prepared in a large area and in batches. Meanwhile, GaN and MoS are selected for use in the invention2The van der Waals heterostructure is constructed by the two-dimensional semiconductor nano materials, so that the excellent physical properties of the two-dimensional materials are kept, and a new interlayer coupling effect and a new heterojunction property can be generated. The photoelectric detector of the invention has simple structure, easy preparation and excellent photoelectric property, and can be widely used for weak light detection, ultraviolet-visible light detection and the like.
2) The two-dimensional GaN nanosheet prepared by the method has excellent photoresponse to ultraviolet light, and is subjected to Van der Waals force and two-dimensional reactionMoS2Formation of heterojunction, on the one hand improved MoS2Low light responsivity and long response time, and broadens MoS2Response to ultraviolet light.
3) GaN/MoS designed by the invention2The heterostructure can effectively promote the separation of photo-generated electron-hole pairs, inhibit the recombination between electrons and holes, and further greatly improve the light responsivity while reducing the light responsivity. GaN/MoS designed by the invention2The response time of a two-dimensional van der Waals heterojunction photodetector to ultraviolet light and visible light is in the order of milliseconds, while the response time of a traditional MoS2The response time of the photodetector is generally several seconds to tens of seconds. GaN/MoS designed by the invention2The responsivity of the two-dimensional Van der Waals heterojunction photoelectric detector to ultraviolet light and visible light is tens to hundreds of A/W, compared with the traditional MoS2The photo-detector has a light responsivity to visible light which is generally in the order of mA/W.
Drawings
FIG. 1 is a GaN/MoS2Schematic diagram of three-dimensional structure of two-dimensional van der Waals heterojunction photoelectric detector. In the figure, (1) SiO2a/Si substrate; (2) n-type two-dimensional GaN nanosheets; (3) p-type two-dimensional MoS2Nanosheets; (4) Ti/Au metal electrodes.
In FIG. 2, (a) is a Scanning Electron Microscope (SEM) photograph of two-dimensional GaN nanosheets, and (b) is an Atomic Force Microscope (AFM) photograph of two-dimensional GaN nanosheets.
In FIG. 3, (a) is GaN/MoS2An optical photograph of a two-dimensional van der waals heterojunction photodetector, and (b) a height variation curve scanned along a straight line in the graph (a) by an atomic force microscope.
FIG. 4 is a GaN/MoS2The schematic diagram of the energy band structure and the photon-generated carrier transportation when the two-dimensional van der Waals heterojunction photoelectric detector is simultaneously irradiated by ultraviolet light and applied with forward bias.
FIG. 5 is a GaN/MoS2I-V curve of two-dimensional Van der Waals heterojunction photodetector under dark state condition.
FIG. 6 is GaN/MoS2I-V curves of two-dimensional Van der Waals heterojunction photodetectors under 365nm and 532nm wavelength illumination in the dark state.
In FIG. 7, (a) is GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector is under 365nm wavelength illumination, the I-V curve of different illumination intensity, (b) is the photoelectric detector under 532nm wavelength illumination, the I-V curve of different illumination intensity.
In FIG. 8, (a) is GaN/MoS2A transient optical response curve of the two-dimensional van der waals heterojunction photoelectric detector under 365nm wavelength illumination, and (b) a transient optical response curve of the photoelectric detector under 532nm wavelength illumination.
The specific implementation mode is as follows:
in the specific implementation process, the two-dimensional GaN nanosheet with the thickness of a plurality of atomic layers is prepared by using a moving printing auxiliary high-temperature ammoniation method of Ga liquid drops, and the two-dimensional GaN nanosheet has the advantages of large size, high crystallization quality and simplicity in preparation. Meanwhile, the prepared two-dimensional GaN nanosheets are utilized to design GaN/MoS2Two-dimensional van der waals heterojunction photodetectors. The device structure of the photoelectric detector comprises an insulating substrate, two-dimensional GaN nanosheets and two-dimensional MoS from bottom to top in sequence2Nanosheets and metal electrodes. Two-dimensional GaN nanosheet and two-dimensional MoS2The nanosheets are provided with partially overlapping regions that form heterojunctions by van der waals interactions.
The invention is further described with reference to the following figures and specific embodiments.
Example (b):
in this example, GaN/MoS2The two-dimensional Van der Waals heterojunction photoelectric detector and the preparation method thereof are as follows:
1) metal Ga was coated on the tape and heated to its melting point of 29.8 ℃ to melt it into a liquid state, forming droplets of metal Ga of about 5mm in diameter.
2) Preparing a Polydimethylsiloxane (PDMS) bulk flexible substrate with the surface size of 2cm multiplied by 2cm, enabling metal Ga drops adhered on an adhesive tape to be in contact with the PDMS substrate, applying pressure of about 1N and controlling the metal Ga drops on the adhesive tape to move and print on the PDMS. The flowing metal Ga liquid drops react with oxygen in the air and adsorbed oxygen on the surface of PDMS to form two-dimensional amorphous gallium oxide (Ga)2O3) Nano-sheet. Two-dimensional amorphous Ga2O3The nanosheets are adsorbed on the surface of PDMS due to strong adhesion force with the PDMS, and residual liquid Ga metal is taken away along with the printing process, so that large-area two-dimensional amorphous Ga is prepared on the PDMS2O3Nanosheets.
3) PDMS is controlled to contact SiO with a certain loading force of 1.5N2A Si substrate, two-dimensional amorphous Ga on PDMS2O3Transfer of nanosheets to SiO2a/Si substrate. Wherein, SiO2the/Si substrate is a Si substrate on which SiO with the thickness of 300nm is deposited2。
4) Will be transferred to SiO2Two-dimensional amorphous Ga of/Si substrate2O3Placing the nano-sheets in the center of a tube furnace, pumping the tube furnace to 0.1Pa, heating the tube furnace to 800 ℃, and introducing 3 standard milliliters of Ar gas per minute (sccm) and 5sccm ammonia gas (NH)3) And preserving the heat for 10 minutes, and naturally cooling to obtain the ultrathin (average thickness of 6.48nm and layer number of 12 layers) n-type two-dimensional GaN nanosheets.
5) Using adhesive tape to make block p-type MoS2Peeling to form a thin layer, and then MoS2Transfer from tape to PDMS. Searching p-type two-dimensional MoS with thickness below 10nm from PDMS by using an optical microscope2Nanosheets. MoS in the present example2The thickness of the nano-sheet is 7.97nm, and the number of layers is 12. P-type two-dimensional MoS on PDMS (polydimethylsiloxane) by utilizing micro mechanical arm2One part of the nano sheets is stacked on the prepared n-type two-dimensional GaN nano sheets, and the other part is directly stacked on SiO2On a/Si substrate. The technical index requirements of the micro mechanical arm are as follows: the miniature mechanical arm can firmly fix the glass slide, the XYZ three-axis of the glass slide is adjustable, and the stroke is 15 mm. The adhesive tape is Scotch transparent adhesive tape produced by American 3M company.
6) By combining photoetching technology with electron beam evaporation technology, n-type two-dimensional GaN nanosheets and p-type two-dimensional MoS2Ti/Au metal electrodes are deposited at two ends of the nano-sheets without overlapping to obtain the final GaN/MoS2Two-dimensional van der waals heterojunction photodetectors (see figure 1).
Referring to FIG. 1, a GaN/MoS of the present invention2Two-dimensional van der Waals heterojunction lightThe electric detector sequentially comprises SiO from bottom to top2a/Si substrate (1), and formed on SiO2N-type two-dimensional GaN nanosheet (2) and p-type two-dimensional MoS on/Si substrate (1)2Nanosheet (3), and use thereof in n-type two-dimensional GaN nanosheet (2) and p-type two-dimensional MoS2The nano-sheets (3) do not overlap the Ti/Au metal electrodes (4) deposited at the two ends. P-type two-dimensional MoS2The nano-sheet (3) is partially covered on the n-type two-dimensional GaN nano-sheet (2), and two relatively parallel Ti/Au metal electrodes (4) are respectively covered on the n-type two-dimensional GaN nano-sheet (2) and the p-type two-dimensional MoS2The nano-sheets (3). The Ti/Au metal electrode is a Ti and Au double-layer composite electrode, the thickness of the Ti layer is 5nm, and the thickness of the Au layer is 30 nm.
Referring to fig. 2, it can be seen from SEM photograph of two-dimensional GaN nanosheets that the prepared GaN nanosheets have very large size (hundreds of microns or more) and good continuity, and from AFM photograph it can be seen that the surface is flat and the thickness is only a few nanometers.
Referring to FIG. 3, from GaN/MoS2It can be seen from the optical photograph of the two-dimensional van der Waals p-n heterojunction photodetector that the GaN nanosheet is partially covered on the MoS2Surface, GaN and MoS, as seen by AFM2Is only a few nanometers thick.
Referring to FIG. 4, from GaN/MoS2The energy level arrangement of the heterojunction is favorable for the rapid and effective separation and transfer of photogenerated electrons and holes, thereby improving the photoresponse and reducing the photoresponse time. Wherein the solid spheres represent electrons and the hollow spheres represent holes.
Referring to fig. 5, it can be seen from the dark state IV characteristic curve that the p-n heterojunction photodetector has very good rectification characteristic and a small turn-on voltage (1.5V).
Referring to fig. 6, it can be seen from the IV characteristic that the photodetector maintains very good rectification characteristics after 365nm and 532nm illumination. Under the illumination of 365nm and 532nm wavelength, the optical fiber has larger photocurrent gain and good ultraviolet and visible light response characteristics.
Refer to the drawingsFrom GaN/MoS 72The I-V curves of the two-dimensional Van der Waals heterojunction photoelectric detector under 365nm and 532nm wavelength illumination with different illumination intensities can show that the photocurrent gradually increases with the increase of the incident light power, which shows that the photoelectric detector of the invention is very sensitive to the intensities of ultraviolet light and visible light. Through calculation, the photoresponse of the photoelectric detector of the invention to 365nm ultraviolet light is as high as 27A/W, and the external quantum efficiency and specific detectivity can respectively reach 9.2 multiplied by 103% and 6.6X 108Jones. The light responsivity to visible light of 532nm can be up to 330A/W, and the external quantum efficiency and specific detectivity can be respectively up to 7.6X 104% and 2.0X 1011Jones。
Referring to fig. 8, it can be seen from the transient optical response curve of the device that the photodetector of the present invention has stable light/dark current, fast optical response time (the ultraviolet response time is about 300ms, and the visible response time is about 400ms), high on-state repeatability, and extremely excellent photoelectric signal conversion and switching characteristics.
The results of the examples show that compared to conventional two-dimensional MoS2Photodetector, GaN/MoS of the invention2The two-dimensional Van der Waals heterojunction photoelectric detector has high light responsivity to visible light, and also has high light responsivity and detection sensitivity to ultraviolet light. Also, the optical response time is faster than that of the conventional two-dimensional MoS2Photodetectors (commonly on the order of seconds). The device of the photoelectric detector is simple to prepare, and is beneficial to obtaining wider application in the field of photoelectric detectors.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modifications or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (9)

1.一种GaN/MoS2二维范德华异质结光电探测器，其特征在于，自下而上依次包括绝缘基底，以及形成于绝缘基底上的二维GaN纳米片、二维MoS2纳米片，以及在GaN纳米片和MoS2纳米片不重叠两端沉积的金属电极；二维MoS2纳米片部分覆盖在二维GaN纳米片上，二维GaN纳米片和二维MoS2纳米片之间有部分重叠区域，部分重叠区域通过范德华力相互作用形成异质结，两个相对平行的金属电极分别覆盖在二维GaN纳米片和二维MoS2纳米片上；1. a GaN/MoS two -dimensional van der Waals heterojunction photodetector, characterized in that, from bottom to top, include an insulating substrate, and two-dimensional GaN nanosheets, two -dimensional MoS nanosheets formed on the insulating substrate , and the metal electrodes deposited on the non - overlapping ends of the GaN nanosheets and the MoS2 nanosheets; the 2D MoS2 nanosheets are partially covered on the 2D GaN nanosheets, and there is a gap between the 2D GaN nanosheets and the 2D MoS2 nanosheets . Partially overlapping region, the partially overlapping region forms a heterojunction through van der Waals interaction, and two relatively parallel metal electrodes are covered on 2D GaN nanosheets and 2D MoS 2 nanosheets, respectively; 所述的GaN/MoS2二维范德华异质结光电探测器的制备方法，包括以下步骤：The preparation method of the GaN/MoS 2 -dimensional van der Waals heterojunction photodetector includes the following steps: 步骤1：将金属Ga涂覆在胶带上，加热金属Ga至其熔点29.8℃，以使其熔化成液态形成金属Ga液滴；Step 1: Coating the metal Ga on the tape, heating the metal Ga to its melting point of 29.8°C to melt it into a liquid state to form metal Ga droplets; 步骤2：让金属Ga液滴与聚二甲基硅氧烷衬底接触，并控制胶带上的金属Ga液滴在聚二甲基硅氧烷上移动印刷，从而在聚二甲基硅氧烷上制备大面积的二维非晶氧化镓；Step 2: let the metal Ga droplets contact the polydimethylsiloxane substrate, and control the metal Ga droplets on the tape to move and print on the polydimethylsiloxane, so as to print on the polydimethylsiloxane Preparation of large-area two-dimensional amorphous gallium oxide; 步骤3：控制聚二甲基硅氧烷加载于接触表面绝缘基底，将聚二甲基硅氧烷上的二维非晶氧化镓转移至绝缘基底；Step 3: control the loading of polydimethylsiloxane on the insulating substrate on the contact surface, and transfer the two-dimensional amorphous gallium oxide on the polydimethylsiloxane to the insulating substrate; 步骤4：将二维非晶氧化镓与绝缘基底一起转移至管式炉，然后将管式炉抽真空后加热管式炉达到700～850℃，通入保护气体和反应气体并保温，得到超薄的二维GaN纳米片；Step 4: Transfer the two-dimensional amorphous gallium oxide together with the insulating substrate to the tube furnace, then evacuate the tube furnace and heat the tube furnace to 700-850°C, pass in the protective gas and the reaction gas and keep the temperature to obtain the ultra-high temperature. Thin 2D GaN nanosheets; 步骤5：利用胶带将块体MoS2剥离至薄层，然后将薄层MoS2从胶带转移至聚二甲基硅氧烷上；利用光学显微镜，从聚二甲基硅氧烷上寻找层数在1～10层的二维MoS2纳米片；将聚二甲基硅氧烷上的二维MoS2纳米片堆垛至已制备好的二维GaN纳米片上；Step 5: Use tape to peel off the bulk MoS 2 to a thin layer, then transfer the thin layer of MoS 2 from the tape to the polydimethylsiloxane; use an optical microscope to find the number of layers from the polydimethylsiloxane 2D MoS 2 nanosheets in 1-10 layers; stacking 2D MoS 2 nanosheets on polydimethylsiloxane onto the prepared 2D GaN nanosheets; 步骤6：利用光刻技术结合电子束蒸发技术，分别在GaN纳米片和MoS2纳米片不重叠的两端沉积金属电极。Step 6: Using photolithography technology combined with electron beam evaporation technology, metal electrodes are deposited on the non - overlapping ends of the GaN nanosheets and the MoS2 nanosheets, respectively. 2.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，绝缘基底材料为SiO2/Si、Al2O3或Si3N4。2 . The GaN/MoS 2 two-dimensional van der Waals heterojunction photodetector according to claim 1 , wherein the insulating base material is SiO 2 /Si, Al 2 O 3 or Si 3 N 4 . 3 . 3.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，二维GaN纳米片和二维MoS2纳米片厚度均小于10nm，直径为2～100μm。3 . The GaN/MoS 2 two-dimensional van der Waals heterojunction photodetector according to claim 1 , wherein the two-dimensional GaN nanosheets and the two -dimensional MoS2 nanosheets are both less than 10 nm thick and 2-100 μm in diameter. 4 . 4.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，二维GaN纳米片为n型半导体，二维MoS2纳米片为n型或p型半导体。4. The GaN/MoS two -dimensional van der Waals heterojunction photodetector according to claim 1, wherein the two-dimensional GaN nanosheets are n-type semiconductors, and the two -dimensional MoS2 nanosheets are n-type or p-type semiconductors . 5.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，金属电极为Ti/Au、Cr/Au、Ni/Au、Au或Ag，并且分别覆盖在GaN纳米片和MoS2纳米片不重叠的两端，金属电极的厚度为10～100nm。5. The GaN/MoS 2 -dimensional van der Waals heterojunction photodetector according to claim 1, wherein the metal electrodes are Ti/Au, Cr/Au, Ni/Au, Au or Ag, and are respectively covered on The two ends of the GaN nanosheet and the MoS2 nanosheet do not overlap, and the thickness of the metal electrode is 10-100 nm. 6.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，步骤1中，金属Ga液滴的直径为1～10mm。6 . The GaN/MoS 2 two-dimensional van der Waals heterojunction photodetector according to claim 1 , wherein in step 1, the diameter of the metal Ga droplet is 1-10 mm. 7 . 7.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，步骤3中，聚二甲基硅氧烷对绝缘基底的加载力为1～5N。7 . The GaN/MoS 2 two-dimensional van der Waals heterojunction photodetector according to claim 1 , wherein in step 3, the loading force of the polydimethylsiloxane on the insulating substrate is 1-5N. 8 . 8.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，步骤4中，抽真空的真空度为1～10-2Pa。8 . The GaN/MoS 2 two-dimensional van der Waals heterojunction photodetector according to claim 1 , wherein, in step 4, the vacuum degree of evacuation is 1˜10 −2 Pa. 9 . 9.根据权利要求1所述的GaN/MoS2二维范德华异质结光电探测器，其特征在于，步骤4中，保护气体为流量2～10sccm的Ar气或N2气，反应气体为流量2～50sccm的氨气，保温时间为2～10分钟。9 . The GaN/MoS 2 -dimensional van der Waals heterojunction photodetector according to claim 1 , wherein in step 4, the protective gas is Ar gas or N gas with a flow rate of 2-10 sccm, and the reactive gas is a flow rate of 2-10 sccm. 10 . 2-50sccm of ammonia gas, the holding time is 2-10 minutes.
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CN114879002B (en) * 2022-05-07 2023-03-24 北京科技大学 Single Pixel Image Recognition System Based on Van der Waals Photodetector
CN115976644B (en) * 2022-12-21 2025-05-16 中国科学院长春光学精密机械与物理研究所 Van der Waals epitaxy method of high-quality AlGaN material on amorphous substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105470320A (en) * 2015-12-07 2016-04-06 浙江大学 Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor
CN107749433A (en) * 2017-08-30 2018-03-02 中国科学院上海技术物理研究所 A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof
CN207529954U (en) * 2017-08-30 2018-06-22 中国科学院上海技术物理研究所 A kind of two dimension Van der Waals heterojunction photoelectric detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105470320A (en) * 2015-12-07 2016-04-06 浙江大学 Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor
CN107749433A (en) * 2017-08-30 2018-03-02 中国科学院上海技术物理研究所 A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof
CN207529954U (en) * 2017-08-30 2018-06-22 中国科学院上海技术物理研究所 A kind of two dimension Van der Waals heterojunction photoelectric detector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Understanding of MoS2/GaN;Monika Moun等;《SCIENTIFIC REPORTS》;20180807;第8卷(第11799期);第1-10页 *

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