CN107146815A - A kind of Schottky gate field-effect transistor and preparation method and application - Google Patents
A kind of Schottky gate field-effect transistor and preparation method and application Download PDFInfo
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- CN107146815A CN107146815A CN201710171241.6A CN201710171241A CN107146815A CN 107146815 A CN107146815 A CN 107146815A CN 201710171241 A CN201710171241 A CN 201710171241A CN 107146815 A CN107146815 A CN 107146815A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- 230000005669 field effect Effects 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052961 molybdenite Inorganic materials 0.000 claims description 6
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910005543 GaSe Inorganic materials 0.000 claims description 4
- 229910016021 MoTe2 Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910004211 TaS2 Inorganic materials 0.000 claims description 4
- 229910004214 TaSe2 Inorganic materials 0.000 claims description 4
- 229910003092 TiS2 Inorganic materials 0.000 claims description 4
- 229910003090 WSe2 Inorganic materials 0.000 claims description 4
- 229910006247 ZrS2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- -1 graphite Alkene Chemical class 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention discloses a kind of preparation method of Schottky gate field-effect transistor, and this method prepares two-dimensional material on substrate, photoresist is spin-coated on substrate and two-dimensional material first, after photolithographic exposure and development, exposes source-drain electrode window；Metal is plated, photoresist is washed off, then annealed in atmosphere, source electrode and drain electrode is formed；Continue spin coating photoresist on full wafer sample, after photolithographic exposure and development, expose gate electrode window；Metal is plated again, photoresist is washed off, forms Schottky gate field-effect transistor.The Schottky gate field-effect transistor has the advantages that size is small, on-off ratio is high, mobility is high and can eliminate short-channel effect well, can be the application field for widening two-dimensional material device.
Description
Technical field
The invention belongs to microelectronics technology, more particularly, to a kind of Schottky gate field-effect transistor and its system
Preparation Method and application.
Background technology
As the two-dimensional material found earliest, graphene is due to unique physical and chemical performance and in nano photoelectric
The huge applications potentiality in field, have attracted the substantial amounts of concern of people and research in recent years.However, the zero band gap properties limit of graphene
Its application in nanoelectronic field is made.Although people open its band gap with various methods, open
Band gap very little, what is played has little effect.Recent years, it is used as the alternative of graphene, two-dimentional transition metal chalcogenide
(TMDs) progressively rise, they possess a certain size band gap (1-3eV) and have illustrated photoelectric properties excellent.Example
Such as, based on individual layer or several layers of MoS2Field-effect transistor show excellent field effect transistor switch than with larger room temperature electron
Mobility.In addition, the photo-detector based on two-dimensional TM Ds has also shown very high light sensitivity and quick photo absorption property.
In recent years, by the Van der Waals hetero-junctions of monocrystal material longitudinal stack, also rapid prosperity is got up.Fan Dewa
You are superimposed at this hetero-junctions by different two-dimensional materials, and it can inherit the excellent photoelectric property of one-component, also may be used
To show the device function of uniqueness.These artificial hetero-junctions have strong light-thing interaction and excellent optical property,
Allow them to extensive use in optoelectronic devices, such as photodiode, photovoltaic cell, photocatalysis and LEDs.For example,
Based on graphene and MoS2The on-off ratio of the vertical field-effect transistor (FETs) of hetero-junctions is up to 1000, and current density reaches
5000Acm-2.They also show the multiple photoelectric functional of brilliance, including high sensitive optical detection and grid voltage controllable steady-state light
Conductivity, maximum internal quantum efficiency produces performance, and huge information storage function up to 85% controllable photoelectric current.
It is not unique, but has its counterpart, the two-dimensional semiconductor Schottky barrier for having similar rectification characteristic to two-dimensional semiconductor p-n heterojunction
FETs is also just gradually studied by people in recent years.For the conventional metal oxides semiconductor field of conventional semiconductor material
Transistor (MOSFET), with the reduction of channel length, the depletion width of source-drain area becomes to compare with channel length, this
When raceway groove in Potential Distributing be changed into bidimensional distribution, gradual channel approximately no longer sets up, short channel effect occurs, become subthreshold behavior
Difference, so as to destroy the performance of device.In order to eliminate short channel effect, Schottky barrier FETs just arises at the historic moment.For new two
Tie up semi-conducting material Schottky barrier FETs, it has been found that they have many unique performances.For example, high on-off ratio and moving
Shifting rate, quick speed of photoresponse, Low-voltage Low-power etc..However, two-dimensional material schottky device is mainly source and drain at present
The Schottky contacts of electrode, it is impossible to solve short channel effect problem well, the research on schottky gate electrode not yet appears in the newspapers
Road.
The content of the invention
The invention aims to overcome the deficiencies in the prior art, there is provided a kind of system of Schottky gate field-effect transistor
Preparation Method.This method has preparation technology simple, and array, batch production can be achieved.
Another object of the present invention is to provide Schottky gate field-effect transistor prepared by a kind of above method.The Xiao Te
Base grid field effect transistor has that size is small, on-off ratio is high, mobility is high and it is excellent to eliminate short-channel effect etc. well
Point.
It is still another object of the present invention to provide a kind of application of above-mentioned Schottky gate field-effect transistor.
Above-mentioned purpose of the present invention is achieved by the following technical programs：
A kind of preparation method of Schottky gate field-effect transistor, is comprised the following specific steps that：
S1. two-dimensional material is prepared on substrate, photoresist is spin-coated on substrate and two-dimensional material；
S2. photolithographic exposure plates metal in the substrate sample for being loaded with two-dimensional material in step sl, washes photoetching off with after development
Glue, then anneals in atmosphere, forms source electrode and drain electrode；
S3. continue spin coating photoresist on the sample for forming source electrode and drain electrode in step s 2, then photolithographic exposure and
Development, plates metal on above-mentioned sample, forms schottky gate electrode；
S4. wash photoresist off, Schottky gate field-effect transistor is made.
Preferably, substrate described in step S1 is silicon, silica, quartz, sapphire or carborundum.
Preferably, the two-dimensional material described in step S1 is graphene, black phosphorus, MoS2、WS2、MoSe2、WSe2、MoTe2、
WTe2、h-BN、GaS、GaSe、TiS2、TaS2、TaSe2、NiTe2、NiSe2、ZrS2Or ZrSe2。
Preferably, the graphene, black phosphorus, MoS2、WS2、MoSe2、WSe2、MoTe2、WTe2、h-BN、GaS、GaSe、
TiS2、TaS2、TaSe2、NiTe2、NiSe2、ZrS2Or ZrSe2Thickness be 0.5~20nm.
Preferably, the temperature annealed described in step S2 is 100~500 DEG C, and the gas is N2Or institute in Ar, step S2
State source electrode identical with drain electrode.
Preferably, metal described in step S3 is one kind or any two in Au, Cu, Ni, Ti, Cr, Ag, Al, Pt or Pd
Kind.
It is further preferable that described Au, Cu, Ni, Ti, Cr, Ag, Al, Pt or Pd thickness are 5~1000nm.
The above method prepare Schottky gate field-effect transistor, the Schottky gate field-effect transistor include substrate,
Two-dimensional material, source electrode, drain electrode and schottky gate electrode.
Application of the above-mentioned Schottky gate field-effect transistor in field of optoelectronic devices.
Compared with prior art, the invention has the advantages that：
1. Schottky gate field-effect transistor, system is made in the method that the present invention is combined using photoetching and direct evaporation metal
Standby technique is simple, and array, batch production can be achieved.
2. the schottky gate electrode of the present invention can play rectified action, suppress leakage current, improve the switch performance of device.
3. Schottky gate field-effect transistor of the present invention has, size is small, on-off ratio is high, mobility is high and can be fine
The advantages of ground eliminates short-channel effect, can be the application field for widening two-dimensional material device.
Brief description of the drawings
Fig. 1 is the preparation method schematic flow sheet of Schottky gate field-effect transistor.
Fig. 2 is the schematic top plan view of Schottky gate field-effect transistor.
Embodiment
Present disclosure is further illustrated with reference to specific embodiment, but be should not be construed as limiting the invention.
Unless otherwise specified, the conventional meanses that technological means used in embodiment is well known to those skilled in the art.Except non-specifically
Illustrate, the reagent of the invention used, method and apparatus is the art conventional reagent, methods and apparatus.
Embodiment 1
Fig. 1 is the preparation method schematic flow sheet of Schottky gate field-effect transistor, wherein 1 is substrate, 2 be two-dimentional material
Material, 3 be source electrode, and 4 be drain electrode, and 5 be schottky gate electrode, and 6 be photoresist, is comprised the following steps：
1. prepare WS in silicon chip substrate 1 using the method for chemical vapor deposition2Two-dimensional material 2, WS2Thickness be 0.5nm,
As shown in Fig. 1 (1).
2. in silicon chip substrate 1 and WS2Spin coating thickness is 2 μm of photoresist 6 in two-dimensional material 2, such as shown in Fig. 1 (2).
3. after photolithographic exposure and development (shown in Fig. 1 (3)), it is being loaded with WS2Plated on the sample of silicon chip substrate 1 of two-dimensional material 2
Thickness is 50nm Ti, source electrode 3 and drain electrode 4 is formed, such as shown in Fig. 1 (4).
4. photoresist 6 is washed off, then in N2In atmosphere shown in 100 DEG C of annealing 0.5h, such as Fig. 1 (5).
5. continue spin coating photoresist 6 on the sample of step 4, such as shown in Fig. 1 (6).
6. photoetching is exposed and developed (shown in Fig. 1 (7)) on the sample of step 5, it is 5nm's that thickness is plated on above-mentioned sample
Pt, forms schottky gate electrode 5, such as shown in Fig. 1 (8).
7. washing photoresist 6 off, Schottky gate field-effect transistor is made, shown in such as Fig. 1 (9).
Fig. 2 is the schematic top plan view of Schottky gate field-effect transistor.Wherein 1 is substrate, and 2 be two-dimensional material, and 3 be source electricity
Pole, 4 be drain electrode, and 5 be schottky gate electrode.Source electrode 3, drain electrode 4 and schottky gate electrode 5 respectively in two-dimensional material 2,
Constitute Schottky gate field-effect transistor.
Embodiment 2
Difference with embodiment 1 is：The two-dimensional material is ZrSe2, ZrSe2Thickness be 20nm；The annealing temperature
For 500 DEG C, atmosphere is Ar；The schottky gate electrode is W metal, and Ni thickness is 1000nm.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, is combined and simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of Schottky gate field-effect transistor, it is characterised in that comprise the following specific steps that：
S1. two-dimensional material is prepared on substrate, photoresist is spin-coated on substrate and two-dimensional material；
S2. photolithographic exposure plates metal in the substrate sample for being loaded with two-dimensional material in step sl, washes photoresist off with after development,
Then annealed in atmosphere, form source electrode and drain electrode；
S3. spin coating photoresist is continued on the sample for forming source electrode and drain electrode in step s 2, then photolithographic exposure and development,
Metal is plated on above-mentioned sample, schottky gate electrode is formed；
S4. wash photoresist off, Schottky gate field-effect transistor is made.
2. the preparation method of Schottky gate field-effect transistor according to claim 1, it is characterised in that institute in step S1
Substrate is stated for silicon, silica, quartz, sapphire or carborundum.
3. the preparation method of schottky gate electrode according to claim 1, it is characterised in that the two dimension described in step S1
Material is graphene, black phosphorus, MoS2、WS2、MoSe2、WSe2、MoTe2、WTe2、h-BN、GaS、GaSe、TiS2、TaS2、TaSe2、
NiTe2、NiSe2、ZrS2Or ZrSe2。
4. the preparation method of Schottky gate field-effect transistor according to claim 3, it is characterised in that the graphite
Alkene, black phosphorus, MoS2、WS2、MoSe2、WSe2、MoTe2、WTe2、h-BN、GaS、GaSe、TiS2、TaS2、TaSe2、NiTe2、NiSe2、
ZrS2Or ZrSe2Thickness be 0.5~20nm.
5. the preparation method of Schottky gate field-effect transistor according to claim 1, it is characterised in that institute in step S2
The temperature for stating annealing is 100~500 DEG C, and the gas is N2Or Ar, source electrode is identical with drain electrode described in step S2.
6. the preparation method of Schottky gate field-effect transistor according to claim 1, it is characterised in that institute in step S3
It is one kind or any two kinds in Au, Cu, Ni, Ti, Cr, Ag, Al, Pt or Pd to state metal.
7. the preparation method of Schottky gate field-effect transistor according to claim 6, it is characterised in that the Au, Cu,
Ni, Ti, Cr, Ag, Al, Pt or Pd thickness are 5~1000nm.
8. the Schottky gate field-effect transistor prepared according to any one of claim 1-7 methods described.
9. Schottky gate field-effect transistor according to claim 8, it is characterised in that the Schottky gate field-effect is brilliant
Body pipe includes substrate, two-dimensional material, source electrode, drain electrode and schottky gate electrode.
10. application of the Schottky gate field-effect transistor in field of optoelectronic devices according to claim 9.
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Cited By (7)
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| CN108914206A (en) * | 2018-08-07 | 2018-11-30 | 湖南大学 | A kind of telluride nickel two-dimensional material and its preparation and application |
| CN109686797A (en) * | 2017-10-19 | 2019-04-26 | 株洲中车时代电气股份有限公司 | A kind of SiC schottky diode and its manufacturing method |
| CN109904238A (en) * | 2019-01-14 | 2019-06-18 | 中国科学院半导体研究所 | Schottky field-effect tube and preparation method based on silicon and transient metal sulfide |
| CN111041449A (en) * | 2019-12-28 | 2020-04-21 | 杭州电子科技大学 | Preparation method of tungsten disulfide with specific morphology |
| CN113049096A (en) * | 2021-03-11 | 2021-06-29 | 中国科学院上海技术物理研究所 | Nickel telluride terahertz detector integrated with room-temperature periodic logarithmic antenna and preparation method |
| CN113793869A (en) * | 2021-08-28 | 2021-12-14 | 西安瑞芯光通信息科技有限公司 | Integrated mixed material high electron mobility transistor and preparation method thereof |
| CN117316773A (en) * | 2023-11-28 | 2023-12-29 | 济南大学 | Preparation method of palladium/tungsten diselenide Schottky transistor |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109686797A (en) * | 2017-10-19 | 2019-04-26 | 株洲中车时代电气股份有限公司 | A kind of SiC schottky diode and its manufacturing method |
| CN108914206A (en) * | 2018-08-07 | 2018-11-30 | 湖南大学 | A kind of telluride nickel two-dimensional material and its preparation and application |
| CN108914206B (en) * | 2018-08-07 | 2020-02-18 | 湖南大学 | Nickel telluride two-dimensional material and preparation and application thereof |
| CN109904238A (en) * | 2019-01-14 | 2019-06-18 | 中国科学院半导体研究所 | Schottky field-effect tube and preparation method based on silicon and transient metal sulfide |
| CN109904238B (en) * | 2019-01-14 | 2021-06-08 | 中国科学院半导体研究所 | Schottky field effect transistor based on silicon and transition metal sulfide and preparation method thereof |
| CN111041449A (en) * | 2019-12-28 | 2020-04-21 | 杭州电子科技大学 | Preparation method of tungsten disulfide with specific morphology |
| CN111041449B (en) * | 2019-12-28 | 2021-10-08 | 杭州电子科技大学 | Preparation method of tungsten disulfide with specific morphology |
| CN113049096A (en) * | 2021-03-11 | 2021-06-29 | 中国科学院上海技术物理研究所 | Nickel telluride terahertz detector integrated with room-temperature periodic logarithmic antenna and preparation method |
| CN113793869A (en) * | 2021-08-28 | 2021-12-14 | 西安瑞芯光通信息科技有限公司 | Integrated mixed material high electron mobility transistor and preparation method thereof |
| CN113793869B (en) * | 2021-08-28 | 2024-08-27 | 聚瑞芯光电有限公司 | Integrated mixed material high electron mobility transistor and preparation method thereof |
| CN117316773A (en) * | 2023-11-28 | 2023-12-29 | 济南大学 | Preparation method of palladium/tungsten diselenide Schottky transistor |
| CN117316773B (en) * | 2023-11-28 | 2024-02-13 | 济南大学 | Preparation method of palladium/tungsten diselenide Schottky transistor |
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