CN109065663A - A kind of double heterojunction ultraviolet detector - Google Patents
A kind of double heterojunction ultraviolet detector Download PDFInfo
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- CN109065663A CN109065663A CN201810928201.6A CN201810928201A CN109065663A CN 109065663 A CN109065663 A CN 109065663A CN 201810928201 A CN201810928201 A CN 201810928201A CN 109065663 A CN109065663 A CN 109065663A
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 22
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 22
- 238000005036 potential barrier Methods 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims abstract description 12
- 230000009471 action Effects 0.000 claims abstract description 8
- 238000012546 transfer Methods 0.000 claims abstract description 7
- 239000004047 hole gas Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 7
- 206010019133 Hangover Diseases 0.000 abstract description 4
- 230000005012 migration Effects 0.000 abstract description 2
- 238000013508 migration Methods 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 12
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003814 drug Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000012921 fluorescence analysis Methods 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 208000017520 skin disease Diseases 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
Abstract
The invention discloses a kind of double heterojunction ultraviolet detector, the upper surface of the GaN absorbed layer forms positive polarization charge, and lower surface forms negative polarization charge；Under the action of polarization charge, the transfer passage two-dimensional hole gas 2DHG as photohole is formed between the AlN buffer layer and the interface of GaN absorbed layer, the transfer passage two-dimensional electron gas 2DEG as light induced electron is formed between GaN absorbed layer and the interface of AlGaN potential barrier, the operating mode of the detector is that light is incident from the upper surface of schottky contact layer.The present invention replaces traditional AlGaN/GaN single heterojunction using AlGaN/GaN/AlN double heterojunction, and photohole will be enabled through 2DHG channel fast transport, thus signal " hangover " phenomenon caused by eliminating single-groove road structure photoproduction hole migration speed slowly.Photohole will further improve the quantum efficiency and response frequency of device by effective collection of 2DHG.Since the presence of double channel polarization charge will be easier to form vertical field distribution in the uptake zone GaN.
Description
Technical field
The present invention relates to a kind of semiconductor photoelectronic device more particularly to a kind of double heterojunction ultraviolet detectors.
Background technique
Ultraviolet detection technology is that the another dual-use photoelectricity to grow up after infrared and Laser Detection Technique is visited
Survey technology.Military field: most directly application is that missile warning and tracking, ultraviolet detector can also be used in height to ultraviolet detection technology
Confidentiality Ultraviolet Communication technology.Civil field: purple especially in recent years in terms of skin disease diagnosis in terms of medicine, biology
Outer Detection Techniques have unique application effect.In terms of food and drug safety, chemical substance usually is replaced using ultraviolet radioactive
Microorganism and bacterium are killed, therefore can be using ultraviolet detector to food and medicine packaging, medical instrument, drinking water and Industry Waste
The disinfection of water is effectively monitored.In addition, highly sensitive ultraviolet detector is also widely used in flame sensing, ozone detection, swashs
The numerous areas such as optical detection, fluorescence analysis and astronomy research.GaN base ultraviolet detector and traditional photomultiplier tube and Si
Detector compare have it is small in size, low in energy consumption, be not necessarily to the advantages such as optical filter, cheap.And GaN detector Radiation hardness
By force, it can work under the adverse circumstances such as space.So GaN base ultraviolet detector becomes domestic and international research hotspot in recent years, draw
Play the attention of countries in the world.
AlGaN/GaN heterojunction structure has biggish energy bandmatch and stronger piezoelectric effect, makes it easier to form 2DEG
(two-dimensional electron gas) structure, therefore and obtain very high electron mobility, can be used to develop high-frequency element.Based on HEMT (high electricity
Transport factor) device the heterogeneous 2DEG-MSM structure ultraviolet detector of AlGaN/GaN, can get high response speed, while can be with
Keep high external quantum efficiency.The structure changes the transverse electric field distribution of tradition MSM feature detector and is distributed for vertical electric field,
Electronics in photo-generated carrier is swept up in Two-dimensional electron gas channel under the action of vertical electric field quickly and then is received by positive electrode
Collection, two-dimensional electron gas structure make electron saturation velocities height (~107Cm/s), getting over for photo-generated carrier will be greatly reduced in this way
Time, therefore very high response speed can be obtained.In this way, the response speed of device by interdigital electrode spacing determine to be changed by
Relatively very thin absorption region thickness determines.2DEG-MSM structure ultraviolet detector based on AlGaN/GaN HEMT device can
The response speed of device is greatly improved while keeping high quantum efficiency, but there is also deficiencies.It is inhaled under vertical field action
The light induced electron for receiving area enters Two-dimensional electron gas channel, finally enters electrode.And photohole is downwardly into low field intensity region, tool
There is lower mobility, need to could be collected by negative electrode by longer distance.The signal that this hole that will lead to photoproduction generates
, there is " hangover " phenomenon of signal in delay, while the transmission time in hole will be greater than its service life and largely compound.
Summary of the invention
Technical problem to be solved by the present invention lies in: the difficulty that photohole is effectively collected provides a kind of double heterogeneous
Tie ultraviolet detector.
The present invention is solution above-mentioned technical problem by the following technical programs, and the present invention includes successively extension from the bottom to top
Growth has AlN buffer layer, GaN absorbed layer, AlGaN potential barrier, schottky contact layer and Schottky contact electrode, and the GaN inhales
The upper surface for receiving layer forms positive polarization charge, and lower surface forms negative polarization charge；It is described under the action of polarization charge
Transfer passage two-dimensional hole gas 2DHG, the GaN absorption as photohole is formed between AlN buffer layer and the interface of GaN absorbed layer
The transfer passage two-dimensional electron gas 2DEG as light induced electron is formed between layer and the interface of AlGaN potential barrier, the detector
Operating mode is that light is incident from the upper surface of schottky contact layer.The presence of double channel polarization charge will be easier to inhale in GaN
It receives area and forms vertical field distribution, the introducing of 2DHG channel can greatly improve the collection efficiency in hole, it is purple to eliminate single-groove road
" hangover " phenomenon of external detector, while improving the bandwidth and responsiveness of detector.
As one of preferred embodiment of the invention, the AlN buffer layer is arranged with substrate, outside the AlN buffer layer
Prolong growth on substrate, the substrate is sapphire nano-patterned substrate material.
As one of preferred embodiment of the invention, the AlN buffer layer is the intrinsic AlN material of epitaxial growth, with a thickness of
150~300 nanometers.
As one of preferred embodiment of the invention, the GaN absorbed layer is intrinsic GaN material, the thickness of the GaN absorbed layer
Degree is 0.5~3 micron.
As one of preferred embodiment of the invention, the AlGaN potential barrier is intrinsic AlxGa1-xN material, with a thickness of 15~
30 nanometers, 0.1≤x≤1.
As one of preferred embodiment of the invention, the schottky contact layer with a thickness of 2 nanometers, be intrinsic GaN material.
As one of preferred embodiment of the invention, the both ends of the schottky contact layer are respectively equipped with schottky junctions electric shock
Pole, the spacing of Schottky contact electrode are 10 microns, and at both ends, Schottky electrode is increased in 5V bias, due to the 2DEG of high concentration
Presence, the horizontal direction along 2DEG can not exhaust, can back bias voltage side base part along vertical two-dimensional electron gas direction
It exhausts and enters GaN absorbed layer, form the vertical electric field around back bias voltage Schottky electrode one end and be distributed, the presence meeting of double heterojunction
Enhance the vertical distribution of electric field.
As one of preferred embodiment of the invention, the concentration of the 2DEG reaches 2.2 × 1013cm-2, correspondence mobility 4 ×
103cm2/ Vs, the electronics that uptake zone light absorption is formed are swept up 2DEG under the action of vertical electric field, after it is high in 2DEG channel
Speed is transported to plus the Schottky electrode of positive bias forms signal code.
As one of preferred embodiment of the invention, the concentration of the 2DHG reaches 9.2 × 1012cm-2, corresponding mobility 6.2
×103cm2/ Vs, uptake zone light absorption formed hole be swept up 2DHG under the action of vertical electric field, after in 2DHG channel
High speed is transported to plus the Schottky electrode of back bias voltage forms signal code.
AlGaN/GaN/AlN double heterojunction material can be formed simultaneously 2DEG and 2DHG channel, the concentration of 2DEG and 2DHG
2.2 × 10 can be reached respectively13cm-2Corresponding mobility 4 × 103cm2/ Vs and 9.2 × 1012Cm-2 correspond to mobility 6.2 ×
103cm2/Vs.In order to solve the problems, such as that 2DEG-MSM single-groove road structure ultraviolet detector exists, while having 2DEG and 2DHG defeated
The AlGaN/GaN/AlN double heterojunction ultraviolet detector based on vertical electric field distribution of fortune channel can make up single-groove road device
It is insufficient.2DEG and 2DHG channel is respectively intended to collect and transport the light induced electron and photohole of perpendicualr field separation.
The present invention has the advantage that the present invention replaces passing using AlGaN/GaN/AlN double heterojunction compared with prior art
The AlGaN/GaN single heterojunction of system, photohole will be enabled through 2DHG channel fast transport, to eliminate single-groove road structure photoproduction
Hole migration speed slowly caused by signal " hangover " phenomenon.Photohole will further improve device by effective collection of 2DHG
Quantum efficiency and response frequency.Since the presence of double channel polarization charge will be easier to form vertical electricity in the uptake zone GaN
Field distribution.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is internal electric field distribution schematic diagram of the invention；
Fig. 3 is band structure schematic diagram of the present invention；
Fig. 4 is transfer ways schematic diagram of the invention.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
As shown in Figure 1, the present embodiment includes substrate 1, successively AlN buffer layer 2, GaN of the epitaxial growth on substrate 1 absorb
Layer 3, AlGaN potential barrier 4, schottky contact layer 5, a pair of of interdigital structure Schottky contact electrode 6；2 extension of AlN buffer layer is raw
It grows on substrate 1, GaN absorbed layer 3 is produced on AlN buffer layer 2, and AlGaN potential barrier 4 makes on GaN absorbed layer 3, Xiao Te
Base contact layer 5 is produced on AlGaN potential barrier 4, and Schottky contact electrode 6 is produced on schottky contact layer 5.Substrate 1
For nano patterning sapphire material, AlN buffer layer 2 is the AlN material of low-temperature epitaxy.GaN absorbed layer 3 is unintentional doping
GaN material, doping concentration are 5 × 1016cm-3.AlGaN potential barrier 4 is intrinsic AlxGa1-xN material, 0.1≤x≤1.Schottky
Contact layer 5 is intrinsic GaN material.
The light of the present embodiment is incident from the upper surface of schottky contact layer, AlN buffer layer 2 with a thickness of 100 nanometers,
GaN absorbed layer 3 with a thickness of 2 microns, AlGaN potential barrier 4 with a thickness of 25 nanometers, schottky contact layer 5 is with a thickness of 2 nanometers.
As shown in Fig. 2, can significantly see the internal vertical electric field distribution of device (under -10V bias).Fig. 3 is zero bias
Depress obtained band structure and electronics, hole distribution.The result shows that existing while 2DEG and 2DHG channel configuration, and ditch
Road concentration of electric charges reaches nearly 1020cm-3。
As shown in figure 4, ultraviolet light enters detector from front end, it is absorbed generation electron hole pair in GaN absorbed layer 3,
Electronics is swept into the 2DEG channel between GaN absorbed layer 3 and AlGaN potential barrier 4 by electric field under the action of vertical electric field, since 2DEG has
There is very high mobility, so the signal that light induced electron generates enters positive electrode quickly；Meanwhile photohole is swept into downwards
2DHG channel between GaN absorbed layer 3 and AlN buffer layer 2, photohole below the 2DHG channel transport to negative electrode after again into
Enter GaN absorbed layer 3, finally enter negative electrode and form signal code, since 2DHG has very high mobility, hole is in level side
To transport velocity be exceedingly fast, and detector vertical direction thickness will be much smaller than horizontal direction, so the response of photohole
Also it is exceedingly fast.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (9)
1. a kind of double heterojunction ultraviolet detector, which is characterized in that including from the bottom to top successively epitaxial growth have AlN buffer layer,
The upper surface of GaN absorbed layer, AlGaN potential barrier, schottky contact layer and Schottky contact electrode, the GaN absorbed layer is formed
Positive polarization charge, lower surface form negative polarization charge；Under the action of polarization charge, the AlN buffer layer and GaN absorb
The boundary of transfer passage two-dimensional hole gas 2DHG, the GaN absorbed layer and AlGaN potential barrier as photohole is formed between the interface of layer
Form transfer passage two-dimensional electron gas 2DEG as light induced electron between face, the operating mode of the detector is light from Xiao Te
The upper surface of base contact layer is incident.
2. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that under the AlN buffer layer
It is provided with substrate, on substrate, the substrate is sapphire nano-patterned substrate material to the AlN buffering layer epitaxially grown.
3. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that the AlN buffer layer is outer
Prolong the intrinsic AlN material of growth, with a thickness of 150~300 nanometers.
4. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that the GaN absorbed layer is this
Levy GaN material, the GaN absorbed layer with a thickness of 0.5~3 micron.
5. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that the AlGaN potential barrier is
Intrinsic AlxGa1-xN material, with a thickness of 15~30 nanometers, 0.1≤x≤1.
6. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that the schottky contact layer
It is intrinsic GaN material with a thickness of 2 nanometers.
7. a kind of double heterojunction ultraviolet detector according to claim 6, which is characterized in that the schottky contact layer
Both ends are respectively equipped with Schottky contact electrode, and the spacing of Schottky contact electrode is 10 microns.
8. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that the concentration of the 2DEG reaches
2.2×1013cm-2, corresponding mobility 4 × 103cm2/Vs。
9. a kind of double heterojunction ultraviolet detector according to claim 1, which is characterized in that the concentration of the 2DHG reaches
9.2×1012cm-2, corresponding mobility 6.2 × 103cm2/Vs。
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| CN201810928201.6A CN109065663A (en) | 2018-08-14 | 2018-08-14 | A kind of double heterojunction ultraviolet detector |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109873047A (en) * | 2019-02-02 | 2019-06-11 | 浙江大学 | A kind of novel heterojunction photon type infrared detector and preparation method and application |
| CN110047969A (en) * | 2019-05-06 | 2019-07-23 | 北京工业大学 | A kind of SOI base SiGe double-heterojunctiophototransistor phototransistor detector |
| CN110164995A (en) * | 2019-04-29 | 2019-08-23 | 中国电子科技集团公司第三十八研究所 | Low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof |
| WO2020146093A1 (en) * | 2019-01-08 | 2020-07-16 | Analog Devices, Inc. | Semiconductor photodetector assembly |
| CN111564511A (en) * | 2020-05-19 | 2020-08-21 | 河北工业大学 | AlGaN-MSM detector structure based on polarization effect and preparation method thereof |
| CN111668327A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel capacitive photoelectric detector |
| US11309450B2 (en) | 2018-12-20 | 2022-04-19 | Analog Devices, Inc. | Hybrid semiconductor photodetector assembly |
| CN114678439A (en) * | 2022-03-14 | 2022-06-28 | 江南大学 | 2DEG ultraviolet detector with symmetrical interdigital structure and preparation method thereof |
| WO2022261829A1 (en) * | 2021-06-15 | 2022-12-22 | 中山大学 | Group iii-nitride heterojunction photoelectric detector |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11309450B2 (en) | 2018-12-20 | 2022-04-19 | Analog Devices, Inc. | Hybrid semiconductor photodetector assembly |
| US11302835B2 (en) | 2019-01-08 | 2022-04-12 | Analog Devices, Inc. | Semiconductor photodetector assembly |
| WO2020146093A1 (en) * | 2019-01-08 | 2020-07-16 | Analog Devices, Inc. | Semiconductor photodetector assembly |
| CN109873047A (en) * | 2019-02-02 | 2019-06-11 | 浙江大学 | A kind of novel heterojunction photon type infrared detector and preparation method and application |
| CN110164995A (en) * | 2019-04-29 | 2019-08-23 | 中国电子科技集团公司第三十八研究所 | Low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof |
| CN110047969A (en) * | 2019-05-06 | 2019-07-23 | 北京工业大学 | A kind of SOI base SiGe double-heterojunctiophototransistor phototransistor detector |
| CN111564511A (en) * | 2020-05-19 | 2020-08-21 | 河北工业大学 | AlGaN-MSM detector structure based on polarization effect and preparation method thereof |
| CN111564511B (en) * | 2020-05-19 | 2023-03-21 | 河北工业大学 | AlGaN-MSM detector structure based on polarization effect and preparation method thereof |
| CN111668327A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel capacitive photoelectric detector |
| CN111668327B (en) * | 2020-06-22 | 2022-04-22 | 三明学院 | Capacitive photoelectric detector |
| WO2022261829A1 (en) * | 2021-06-15 | 2022-12-22 | 中山大学 | Group iii-nitride heterojunction photoelectric detector |
| CN114678439A (en) * | 2022-03-14 | 2022-06-28 | 江南大学 | 2DEG ultraviolet detector with symmetrical interdigital structure and preparation method thereof |
| CN114678439B (en) * | 2022-03-14 | 2023-07-25 | 江南大学 | 2DEG ultraviolet detector with symmetrical interdigital structure and preparation method thereof |
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Application publication date: 20181221 |