CN110164995A - Low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof - Google Patents
Low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof Download PDFInfo
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- CN110164995A CN110164995A CN201910360058.XA CN201910360058A CN110164995A CN 110164995 A CN110164995 A CN 110164995A CN 201910360058 A CN201910360058 A CN 201910360058A CN 110164995 A CN110164995 A CN 110164995A
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 29
- 238000000576 coating method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000011435 rock Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 11
- 230000007547 defect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012742 biochemical analysis Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention discloses a kind of low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof, including substrate, buffer layer, absorbed layer, coating, electrode；On the substrate top, the absorbed layer is arranged in the buffer layer top for the buffer layer setting, and the coating is arranged in the absorbed layer top, and the coating top is equipped with the electrode；The semi-insulating Al of the Lattice Matching that the present invention usesxGa1‑xN coating, significant to the dark current restriction effect of n-AlGaN ultraviolet detector as Schottky barrier enhancement layer, device overall performance is obviously improved.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical fields, and in particular to a kind of low-dark current n-AlGaN base MSM is purple
External detector and preparation method thereof.
Background technique
The Material growth technology and covering that AlGaN semiconductor material has superior physicochemical characteristics, graduallys mature
The direct band gap (3.4eV~6.2eV) of the ultra-violet (UV) band 365nm~200nm is the ideal material for making ultraviolet detector.Ultraviolet spy
Device is surveyed in combustion monitoring, fire alarm, missile warning, environmental monitoring, ultraviolet communication, biochemical analysis and astronomy research
Equal Military and civil fields have a wide range of applications.
The photodetector low manufacture cost of MSM structure, fast response time, the MSM PD tool based on n-type doping semiconductor
Single chip integrated potential advantages can be realized with metal semiconductor FET by having, however, high-performance n-AlGaN base MSM ultraviolet photoelectric
The manufacturing technology for surveying device is also faced with very big challenge.Main problem is due to obtaining the high-quality of low dislocation defect in foreign substrate
Amount high Al contents N-shaped AlGaN epitaxial material is also highly difficult, therefore the MSM structure day based on n-AlGaN material prepared is blind ultraviolet
Effective Schottky contact barrier of detector is usually lower, causes device dark current very high, seriously restricts device globality
Energy.
In view of the above drawbacks, creator of the present invention obtains the present invention by prolonged research and practice finally.
Summary of the invention
To solve above-mentioned technological deficiency, the technical solution adopted by the present invention is, provides a kind of low-dark current n-AlGaN base
MSM ultraviolet detector, including substrate, buffer layer, absorbed layer, coating, electrode；The buffer layer is arranged on the substrate top
The absorbed layer is arranged in end, the buffer layer top, and the coating is arranged in the absorbed layer top, and the coating top is set
There is the electrode.
Preferably, the substrate is made of sapphire, silicon carbide or silicon materials.
Preferably, the absorbed layer is n-type doping AlxGa1-xN material, electron concentration are greater than 1017cm-3。
Preferably, the coating is semi-insulating AlxGa1-xN material, and lattice matches with the absorbed layer.
Preferably, the electrode is Schottky contact electrode, structure is in interdigitated.
Preferably, the substrate uses sapphire material；The buffer layer is the AlN of high growth temperature, with a thickness of 0.5 μm；
The light absorbing layer is the n-Al of silicon doping0.4Ga0.6N, with a thickness of 0.3 μm；The coating be it is non-mix it is semi-insulating
Al0.4Ga0.6N, with a thickness of 20nm；The electrode is set as Ni/Au metal layer, and Ni thickness degree and Au thickness degree are 7nm, described
The finger beam of electrode is 10 μm, refers to a length of 400 μm, refers to that spacing is 10 μm.
Preferably, a kind of preparation method of low-dark current n-AlGaN base MSM ultraviolet detector, comprising steps of
S1, using MOCVD technology epitaxial growth epitaxial wafer over the substrate, the epitaxial slice structure from the substrate from
Under be up followed successively by the buffer layer, the absorbed layer, the coating；
S2 using electron beam evaporation and photoetching technique deposit and defines the translucent fork of Ni/Au on the epitaxial wafer surface
Refer to electrode layer, to finally obtain the low-dark current n-AlGaN base MSM ultraviolet detector.
Preferably, in the step S1, the growth temperature of the epitaxial wafer is 1100 DEG C, III/V ratio is about 1000, chamber
Body pressure is controlled in 100mtorr.
Preferably, the absorbed layer is gently to mix AlxGa1-xN material, electron concentration are greater than 1017cm-3, thickness is set as
200nm~400nm.
Preferably, the coating is semi-insulating AlxGa1-xN material, resistivity are greater than 1010Ω/cm-2, thickness is set as
20nm~30nm.
The beneficial effects of the present invention are the Lattice Matching that the present invention uses semi-insulating Al compared with the prior artxGa1-xN
Coating, significant to the dark current restriction effect of n-AlGaN ultraviolet detector as Schottky barrier enhancement layer, device is whole
Performance is obviously improved.
Detailed description of the invention
Fig. 1 is the front sectional view of low-dark current n-AlGaN base MSM ultraviolet detector of the present invention；
Fig. 2 is low-dark current n-AlGaN base MSM ultraviolet detector of the present invention and conventional type MSM structure ultraviolet detection
The afm image of device epitaxial wafer；
Fig. 3 is low-dark current n-AlGaN base MSM ultraviolet detector of the present invention and conventional type MSM structure ultraviolet detection
The curve graph of device dark current, photoelectric current.
Digital representation in figure:
101- substrate；102- buffer layer；103- absorbed layer；104- coating；105- electrode.
Specific embodiment
Below in conjunction with attached drawing, the forgoing and additional technical features and advantages are described in more detail.
Embodiment one
As shown in FIG. 1, FIG. 1 is the front sectional view of low-dark current n-AlGaN base MSM ultraviolet detector of the present invention；
Low-dark current n-AlGaN base MSM ultraviolet detector of the present invention includes substrate 101, the buffer layer set gradually from bottom to up
102, absorbed layer 103, coating 104, electrode 105.
Wherein, the substrate 101 can be used sapphire, silicon carbide or silicon materials and be made；The UV absorbing layer 103 is
N-type doping AlxGa1-xN material, electron concentration are greater than 1017cm-3；The coating 104 is semi-insulating AlxGa1-xN material, and
Lattice matches with the UV absorbing layer 103, i.e., Al component x takes identical value；The electrode 105 is set as interdigitated.
In the present embodiment, the substrate 101 uses sapphire material, and the buffer layer 102 is the AlN of high growth temperature,
With a thickness of 0.5 μm.The light absorbing layer 103 is (~2.0 × the 10 of silicon doping17cm-3)n-Al0.4Ga0.6N, with a thickness of 0.3 μm.
The coating 104 mixes semi-insulating Al to be non-0.4Ga0.6N, with a thickness of 20nm.The electrode 105 is Schottky contact electrode, if
It is set to Ni/Au metal layer, with a thickness of 7nm/7nm, i.e. Ni thickness degree and Au thickness degree is 7nm, the Schottky of interdigitated
It contacts on electrode 105, finger beam is 10 μm, refers to a length of 400 μm, refers to that spacing is 10 μm.
Embodiment two
The preparation method of the MSM ultraviolet detector of low-dark current n-AlGaN base described in embodiment one specifically includes following step
It is rapid:
S1, using MOCVD (metallo-organic compound chemical gaseous phase deposition) technology, epitaxial growth is low on the substrate 101
Dark current n-AlGaN base MSM ultraviolet detector epitaxial wafer, the epitaxial wafer are followed successively by described from the bottom up from the substrate 101
High-temperature AlN buffer layer 102, the n-Al0.4Ga0.6N ultraviolet light absorbing layer 103, the Lattice Matching is semi-insulating, and (resistivity is greater than
1010Ω/cm-2)Al0.4Ga0.6N coating 104.The growth temperature of the AlGaN epitaxial wafer is 1100 DEG C, and III/V ratio is about
1000, chamber pressure is controlled in 100mtorr.
S2 using electron beam evaporation and photoetching technique deposit and defines Ni/Au (7nm/7nm) half on the epitaxial wafer surface
Transparent interdigital electrode layer, to finally obtain the low-dark current n-AlGaN base MSM ultraviolet detector.
In order to facilitate showing technical effect of the invention, at the same also design grown compared with device architecture of the present invention only without
The conventional device epitaxial wafer of semi-insulating coating, the i.e. ultraviolet spy of MSM structure without semi-insulating coating based on n-AlGaN material
Survey device device epitaxial slice.
After completing epitaxial growth technology, two epitaxial wafers are measured using AFM, as shown in Fig. 2, Fig. 2 is the present invention
The afm image of the low-dark current n-AlGaN base MSM ultraviolet detector and conventional type MSM structure ultraviolet detector epitaxial wafer.Its
In, Fig. 2 (b) is the AFM of the MSM structure ultraviolet detector device epitaxial slice without semi-insulating coating based on n-AlGaN material
Photo irregularly distributed many stains on the photo, these stains are the intracorporal linear dislocation defects of material at surface
It is truncated the point trace to be formed, research shows that the corresponding defect of these stains can conduct for device dark current provides channel.Fig. 2 (a)
It is the AFM photo of low-dark current n-AlGaN base MSM ultraviolet detector device epitaxial slice of the present invention, almost without class on the photo
The stain like appeared in Fig. 2 (b), surface topography are more clear.The result shows, semi-insulating coating successfully blocks and blunt
The dislocation defects and surface defect of n-AlGaN material are changed.
As shown in figure 3, Fig. 3 is that low-dark current n-AlGaN base MSM ultraviolet detector of the present invention and conventional type MSM are tied
The curve graph of structure UV detector dark current, photoelectric current.After completing device preparation technology, low-dark current n- of the present invention is tested
AlGaN base MSM ultraviolet detector (i.e. device A in Fig. 3) and conventional MSM structure ultraviolet detector based on n-AlGaN material
The dark current and photocurrent curve of (i.e. device B in Fig. 3) at room temperature.Such as Fig. 3, in the bias range of 0V~5V, device
The dark current of part A is less than 2pA, and the dark current of device B has been up to 10 μ A magnitudes.Under the bias of 5V, device A and device
The dark current of B respectively may be about~1.6 × 10-12A and~6.8 × 10-5A, the dark current of device B are device A~4 × 107Times.
In addition, as shown in figure 3, device A a length of 254nm of incident light wave, optical power be 5.8 μ W/mm2It is surveyed under illumination condition
The electric current obtained is respectively~1.2 × 10 under 0.1V and 5V bias-8A and~1.9 × 10-8A, photoelectric current and corresponding dark current
The ratio between be respectively~2.4 × 105With~1.0 × 104, wherein photoelectric current is electricity of the device under illumination condition and under dark condition
The difference of flow valuve.And the electric current that device B is measured under same illumination and bias condition is only slightly higher than dark current, equally in 0.1V~5V
Bias range in, the ratio between photoelectric current and corresponding dark current be no more than 10.It is compared with device B, the dark current of device A is significantly
The ratio between reduction and photoelectric current dark current significantly improve, this result should be attributed to the fact that semi-insulating Lattice Matching AlGaN coating, this is covered
Cap rock can block the dark current channel of volume defect offer, and passivated surface defect improves the barrier height of effective Schottky contacts, from
And effectively limit device dark current.
The semi-insulating Al of the Lattice Matching that the present invention usesxGa1-xN coating, as Schottky barrier enhancement layer, to n-
The dark current restriction effect of AlGaN ultraviolet detector is significant, and device overall performance is obviously improved.
The foregoing is merely presently preferred embodiments of the present invention, is merely illustrative for the purpose of the present invention, and not restrictive
's.Those skilled in the art understand that in the spirit and scope defined by the claims in the present invention many changes can be carried out to it,
It modifies or even equivalent, but falls in protection scope of the present invention.
Claims (10)
1. a kind of low-dark current n-AlGaN base MSM ultraviolet detector, which is characterized in that including substrate, buffer layer, absorbed layer, cover
Cap rock, electrode；On the substrate top, the absorbed layer, the absorption is arranged in the buffer layer top for the buffer layer setting
The coating is arranged in layer top, and the coating top is equipped with the electrode.
2. low-dark current n-AlGaN base MSM ultraviolet detector as described in claim 1, which is characterized in that the substrate uses
Sapphire, silicon carbide or silicon materials are made.
3. low-dark current n-AlGaN base MSM ultraviolet detector as claimed in claim 2, which is characterized in that the absorbed layer is
N-type doping AlxGa1-xN material, electron concentration are greater than 1017cm-3。
4. low-dark current n-AlGaN base MSM ultraviolet detector as claimed in claim 3, which is characterized in that the coating is
Semi-insulating AlxGa1-xN material, and lattice matches with the absorbed layer.
5. low-dark current n-AlGaN base MSM ultraviolet detector as claimed in claim 4, which is characterized in that the electrode is Xiao
Te Ji contacts electrode, and structure is in interdigitated.
6. low-dark current n-AlGaN base MSM ultraviolet detector as claimed in claim 5, which is characterized in that the substrate uses
Sapphire material；The buffer layer is the A1N of high growth temperature, with a thickness of 0.5 μm；The light absorbing layer is the n- of silicon doping
Al0.4Ga0.6N, with a thickness of 0.3 μm；The coating mixes semi-insulating Al to be non-0.4Ga0.6N, with a thickness of 20nm；The electrode setting
For Ni/Au metal layer, Ni thickness degree and Au thickness degree are 7nm, and the finger beam of the electrode is 10 μm, refer to a length of 400 μm, between referring to
Away from being 10 μm.
7. a kind of preparation method of low-dark current n-AlGaN base MSM ultraviolet detector as claimed in claim 5, feature exist
In, comprising steps of
S1, using MOCVD technology epitaxial growth epitaxial wafer over the substrate, the epitaxial slice structure is from the substrate from lower past
On be followed successively by the buffer layer, the absorbed layer, the coating；
S2 using electron beam evaporation and photoetching technique deposit and defines the translucent interdigital electricity of Ni/Au on the epitaxial wafer surface
Pole layer, to finally obtain the low-dark current n-AlGaN base MSM ultraviolet detector.
8. preparation method as claimed in claim 7, which is characterized in that in the step S1, the growth temperature of the epitaxial wafer
Degree is 1100 DEG C, and III/V ratio is about 1000, and chamber pressure is controlled in 100mtorr.
9. preparation method as claimed in claim 7, which is characterized in that the absorbed layer is gently to mix AlxGa1-xN material, electronics are dense
Degree is greater than 1017cm-3, thickness is set as 200nm~400nm.
10. preparation method as claimed in claim 7, which is characterized in that the coating is semi-insulating AlxGa1-xN material, electricity
Resistance rate is greater than 1010Ω/cm-2, thickness is set as 20nm~30nm.
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| CN201910360058.XA CN110164995A (en) | 2019-04-29 | 2019-04-29 | Low-dark current n-AlGaN base MSM ultraviolet detector and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877868A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Gallium nitride-based MSM ultraviolet detector for reducing surface state effect |
| CN103337556A (en) * | 2013-06-13 | 2013-10-02 | 中国科学院上海微系统与信息技术研究所 | Method for cutting band gap wavelength and improving photodetector performance in lattice matching system |
| US20160043263A1 (en) * | 2013-09-25 | 2016-02-11 | Seoul Viosys Co., Ltd. | Semiconductor photo-detecting device |
| CN208014712U (en) * | 2018-03-21 | 2018-10-26 | 华南理工大学 | A kind of AlGaP base ultraviolet detectors |
| CN109065663A (en) * | 2018-08-14 | 2018-12-21 | 中国电子科技集团公司第三十八研究所 | A kind of double heterojunction ultraviolet detector |
-
2019
- 2019-04-29 CN CN201910360058.XA patent/CN110164995A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877868A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Gallium nitride-based MSM ultraviolet detector for reducing surface state effect |
| CN103337556A (en) * | 2013-06-13 | 2013-10-02 | 中国科学院上海微系统与信息技术研究所 | Method for cutting band gap wavelength and improving photodetector performance in lattice matching system |
| US20160043263A1 (en) * | 2013-09-25 | 2016-02-11 | Seoul Viosys Co., Ltd. | Semiconductor photo-detecting device |
| CN208014712U (en) * | 2018-03-21 | 2018-10-26 | 华南理工大学 | A kind of AlGaP base ultraviolet detectors |
| CN109065663A (en) * | 2018-08-14 | 2018-12-21 | 中国电子科技集团公司第三十八研究所 | A kind of double heterojunction ultraviolet detector |
Non-Patent Citations (1)
| Title |
|---|
| FENG XIE 等: "Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors for High-Temperature Applications", 《IEEE SENSORS JOURNAL》 * |
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Application publication date: 20190823 |