CN112652669A - Optical Tamm-state enhanced graphene photoelectric detector and preparation method thereof - Google Patents
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Abstract
The invention relates to an optical Tamm-state enhanced graphene photoelectric detector which comprises a P-type highly-doped silicon wafer (1), a metal reflector (2), an insulating layer (3), a photosensitive layer, a drain-source electrode (4), a dielectric protective layer (5) and a dielectric Bragg reflector (6) which are sequentially stacked from bottom to top, wherein the photosensitive layer (4) is a two-dimensional material or an organic photoelectric film and comprises graphene, molybdenum disulfide, black phosphorus and the like, perovskite and quantum dot films. The light absorption capacity of the graphene is improved by 26 times (from 2.3% to 60%) by utilizing the optical Tamm state, and the problem of low light response rate of a pure graphene photoelectric detector (from 0.6mA/W to 30mA/W) is solved; by changing the structural parameters (metal reflector material and medium Bragg reflector parameter), the photoelectric detection with different response frequencies and bandwidths can be realized so as to meet different application requirements.
Description
The technical field is as follows:
the invention relates to the technical field of photoelectric detection, in particular to an optical Tamm-state enhanced graphene photoelectric detector and a preparation method thereof.
Background
The optical detection technology plays a vital role in the fields of commercial use, civil use (optical communication system) and military use (reconnaissance, guidance and communication). At present, the conventional semiconductor (e.g. silicon, germanium, cadmium sulfide) and the like are still the mainstream materials applied to the photodetector, however, on one hand, the detection frequency range, response speed and the like of the semiconductor photodetector are limited by the inherent energy gap and mobility of the material, and on the other hand, the preparation of a large-area high-quality semiconductor thin film with few defects is very difficult, so that the development of a novel photodetector is urgently needed.
Graphene is a novel photoelectric material, and benefits from its unique energy band structure and material characteristics, and graphene photoelectric detector has the excellent characteristics of wide working range, fast response speed, and the like. However, the light absorption of the single-layer graphene is very weak, i.e., only 2.3%, resulting in low photoelectric conversion efficiency. The photoresponse rate of the pure graphene photoelectric detector is only 0.6mA/W, which severely restricts the practical application of the graphene photoelectric detector. Currently, there are two types of approaches to solve this problem: one is to enhance the interaction of light and graphene by optical mode coupling methods, such as surface plasmon mode, resonant cavity mode, waveguide mode, etc.; the other is to construct a graphene semiconductor heterojunction, photoelectric conversion is realized through a semiconductor, graphene plays a role in collecting and transmitting photoelectrons, and the photoelectric detector prepared by the method still belongs to a semiconductor photoelectric detector essentially. The photoresponse rate of the pure graphene photoelectric detector is limited by the absorption rate of graphene, and the pure graphene photoelectric detector is difficult to be actually applied.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an optical Tamm-state enhanced graphene photoelectric detector with high optical response rate, high response speed and adjustable working wavelength and bandwidth and a preparation method thereof.
According to the invention, the interaction between light and graphene is enhanced by utilizing the field binding characteristic (shown in figure 3) of an optical Tamm state, so that the light absorption enhancement of the graphene is realized, and the light response rate of the graphene photoelectric detector is improved. The optical Tamm state is a local state capable of binding a light field at the interface of metal and a Bragg reflector, has the advantages of field enhancement, direct excitation and independence on polarization, and can be used for improving the interaction between a photosensitive layer and light and enhancing absorption.
The purpose of the invention can be realized by the following technical scheme:
the utility model provides an optics Tamm attitude enhancement mode graphite alkene photoelectric detector, this photoelectric detector include from bottom to top stack in proper order P type highly mix silicon chip, metal reflector, insulating layer, photosensitive layer and drain-source electrode, dielectric protection layer and medium Bragg reflector, photosensitive layer be two-dimensional material or organic photoelectric film, including graphite alkene, molybdenum disulfide, black phosphorus etc. perovskite, quantum dot film.
Preferably, the metal mirror material comprises silver or aluminum.
Preferably, the material of the drain-source electrode is silver.
Preferably, the insulating layer and the dielectric protective layer are both niobium oxide films.
Preferably, the dielectric bragg reflector is formed by alternately stacking a plurality of layers of high refractive index media and low refractive index media.
Preferably, the high refractive index medium is a niobium oxide thin film with a refractive index of 2.3, and the low refractive index medium is a silicon oxide thin film with a refractive index of 1.45.
Preferably, the thickness of the metal mirror is greater than 100 nm.
A preparation method of an optical Tamm-state enhanced graphene photoelectric detector comprises the following steps:
(1) cleaning a substrate P type highly doped silicon wafer by using an RCA process;
(2) sputtering a metal reflector on the P-type highly-doped silicon wafer by utilizing radio frequency magnetron;
(3) depositing an insulating layer on the metal reflector by using ion source assisted electron beam evaporation;
(4) transferring the photosensitive layer to the insulating layer substrate by adopting a bubbling method and removing the photoresist;
(5) sputtering on the photosensitive layer by utilizing radio frequency magnetron to prepare a drain-source electrode;
(6) preparing a protective layer by electron beam evaporation, and performing Raman spectrum characterization on graphene to ensure that the graphene structure is not seriously damaged (as shown in FIG. 4);
(7) the silicon oxide/niobium oxide overlapping dielectric bragg mirrors are prepared according to a pre-design with a specific thickness and number of cycles.
The protective layer in step (6) should be prepared at a low chamber temperature of 120 ℃ and a low deposition rate of 0.2 nm/s.
The thickness of each layer and the total number of layers in the dielectric Bragg reflector in the step (7) are determined by the working wavelength of the device. According to the invention, the absorption of the graphene is enhanced by using the optical Tamm state, so that the detection wavelength and the bandwidth of the whole device are determined by the property of the optical Tamm state, and the absorption, the central wavelength and the bandwidth of the optical Tamm state can be arbitrarily regulated and controlled by reasonable design.
The specific regulation and control method comprises the following steps:
(1) the optical thickness of each dielectric film in the Bragg reflector is one quarter of the working wavelength, and the central wavelength position of the Tamm state can be modulated by changing the thickness of each layer.
(2) Changing the number of film stacks of the bragg mirror can adjust the absorption, center wavelength and bandwidth of the overall structure. As shown in fig. 2(b), taking the silver substrate as an example, when the number of film stacks is increased from 3 to 6, the absorption of the whole structure is increased from 36% to 97%, the central wavelength is blue-shifted from 630nm to 590nm, and the full width at half maximum is decreased from 75nm to 10 nm.
(3) When the material of the metal reflector is changed, the half-height width of the aluminum substrate structure is larger than that of the silver substrate structure when the absorption of the two structures reaches the maximum.
Compared with the prior art, the invention has the following advantages:
(1) the light absorption capacity is strong. The light absorption capacity of the graphene is greatly enhanced by using an optical Tamm state (the maximum enhancement is 26 times as shown in FIG. 2 (d));
(2) the light response rate is high. As shown in fig. 5, under 10W of laser irradiation, the photocurrent reaches 270nA, and the photoresponse rate of the graphene photodetector is greatly enhanced (reaching 30mA/W magnitude);
(3) the stability is high. The detector structure isolates the photosensitive layer (graphene) from the outside, can stably operate in an atmospheric atmosphere and is not easily influenced by water vapor and dust;
(4) the planarization structure is easy to prepare.
Drawings
Fig. 1 is a schematic structural diagram of an optical Tamm state enhanced graphene photodetector according to the present invention.
Fig. 2 shows (a) a scanning electron microscope photograph of a device cross section, (b) a structural reflection spectrum at different DBR layer numbers, (c) a structural reflection spectrum using different substrate materials (aluminum/silver), and (d) theoretically, the absorption of graphene varies with the position of graphene.
Fig. 3 is a raman spectrum of graphene after the protective layer has been grown.
FIG. 4 shows the photoelectric response of the device (light wavelength 600nm, optical power 10 μ w).
Fig. 5 shows the photocurrent of the device under 10 μ w laser irradiation.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
Example 1
Silver substrate, center wavelength 600nm), in brackets are reference process parameters.
(1) Cleaning the silicon wafer in the RCA process and drying the silicon wafer by nitrogen;
(2) performing radio frequency magnetron sputtering on silver, wherein the thickness is more than 100nm (the sputtering power is 75W, and the sputtering time is 40 min);
(3) an ion source is used for assisting an electron beam to evaporate and deposit an insulating layer (niobium oxide) with the thickness of 30nm (the cavity temperature is 150 ℃, the background vacuum is 5 multiplied by 10 < -4 > Pa, and the evaporation rate is 0.3 nm/s);
(4) transferring the copper-based graphene to the substrate in the previous step by adopting a bubbling method and removing the photoresist (the current of the bubbling method is 200mA, the electrolyte is a sodium hydroxide solution, transferring the copper-based graphene to the target substrate, then drying the copper-based graphene for 30min at the temperature of 60 ℃, and removing PMMA by using acetone);
(5) using radio frequency magnetron sputtering silver as a drain-source electrode (sputtering power of 75W, sputtering time of 30min, photoetching method or metal mask method);
(6) preparing a protective layer (niobium oxide) on the exposed graphene part by continuously using electron beam evaporation, wherein the protective layer is 27nm (the cavity temperature is 120 ℃, and the background vacuum is 5 multiplied by 10)-4Pa, evaporation rate 0.2nm/s, using a metal mask);
(7) according to the pre-designed preparation of silicon oxide/niobium oxide overlapped Bragg reflector with specific thickness and periodicity, the central wavelength of the example is 600nm, so that the thickness of niobium oxide is 57nm, the thickness of silicon oxide is 85nm (the cavity temperature is 150 ℃, and the background vacuum is 5 multiplied by 10- 4Pa, evaporation rate 0.5nm/s, using a metal mask);
fig. 1 is a schematic structural diagram of an optical Tamm-state enhanced graphene photodetector.
FIG. 2 (a) is a scanning electron microscope photograph showing a cross section of a device; (b) the diagram shows the structural reflection spectrum under different DBR layers; (c) the figure shows the structure reflection spectra using different substrate materials (aluminum/silver); (d) theoretically, the absorption of graphene is in a relation of changing with the position of graphene;
FIG. 3 is a Raman spectrum of graphene after the protective layer has been grown;
FIG. 4 shows the electro-optic response of the device (light wavelength 600nm, optical power 10 w);
the optical Tamm-state enhanced graphene photoelectric detector prepared by the embodiment has the following advantages: the light absorption capacity of the graphene is improved by 26 times (from 2.3% to 60%) by utilizing an optical Tamm state, and the problem of low light response rate of a pure graphene photoelectric detector (from 0.6mA/W to 30mA/W) is solved; photoelectric detection with different response frequencies and bandwidths can be realized by changing structural parameters (metal reflector materials and medium Bragg reflector parameters) so as to meet different application requirements;
as shown in FIG. 5, under 10W of laser irradiation, the photocurrent reaches 270nA, and the photoresponse rate of the graphene photodetector is greatly enhanced (reaching the magnitude of 30 mA/W).
The graphene photodetector having the band-pass filtering function in the visible light to near-infrared band provided by the present invention is described in detail above, and the above-mentioned embodiment of the present invention is only an example for clearly illustrating the present invention, and is not a limitation to the embodiment of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. The utility model provides an optics Tamm attitude enhancement mode graphite alkene photoelectric detector, its characterized in that, this photoelectric detector include from bottom to top stack gradually P type highly mix silicon chip (1), metal reflecting mirror (2), insulating layer (3), photosensitive layer and leak source electrode, dielectric protection layer (5) and medium Bragg reflector (6), photosensitive layer (4) be two-dimensional material or organic photoelectric film, including graphite alkene, molybdenum disulfide, black phosphorus etc. perovskite, quantum dot film.
2. An optical Tamm state enhanced graphene photodetector according to claim 1, wherein the metal reflector (2) material comprises silver or aluminum.
3. An optical Tamm state enhanced graphene photodetector according to claim 1, wherein the material of the drain-source electrode is silver.
4. An optical Tamm state enhanced graphene photoelectric detector according to claim 1, wherein the insulating layer (3) and the dielectric protective layer (5) are both niobium oxide films.
5. An optical Tamm state enhanced graphene photodetector according to claim 1, wherein said dielectric Bragg reflector (6) is formed by alternately stacking a plurality of layers of high refractive index media and low refractive index media.
6. An optical Tamm state enhanced graphene photodetector according to claim 5, wherein the high refractive index medium is a niobium oxide thin film with a refractive index of 2.3, and the low refractive index medium is a silicon oxide thin film with a refractive index of 1.45.
7. An optical Tamm state enhanced graphene photodetector according to claim 1, wherein the thickness of the metal mirror (2) is greater than 100 nm.
8. The method for preparing an optical Tamm state enhanced graphene photodetector as claimed in claim 1, wherein the method comprises the following steps:
(1) cleaning a substrate P type highly doped silicon wafer (1) by using an RCA process;
(2) sputtering a metal reflector (2) on a P-type highly doped silicon wafer (1) by utilizing radio frequency magnetron;
(3) depositing an insulating layer (3) on the metal reflector (2) by using ion source assisted electron beam evaporation;
(4) transferring the photosensitive layer (4) to the insulating layer (3) substrate by adopting a bubbling method and removing the photoresist;
(5) sputtering on the photosensitive layer (4) by utilizing radio frequency magnetron to prepare a drain-source electrode;
(6) preparing a protective layer (5) by electron beam evaporation;
(7) the silicon oxide/niobium oxide overlapping dielectric bragg mirrors are prepared according to a pre-design with a specific thickness and number of cycles.
9. The method for preparing an optical Tamm state enhanced graphene photoelectric detector according to claim 8, wherein the protective layer in step (6) should be prepared at a low cavity temperature of 120 ℃ and a low deposition rate of 0.2 nm/s.
10. The method of claim 8, wherein the thickness of each layer and the total number of layers in the dielectric Bragg reflector in step (7) are determined by the operating wavelength of the device.
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| CN103053036A (en) * | 2010-07-28 | 2013-04-17 | 首尔Opto仪器股份有限公司 | Light emitting diode having distributed Bragg reflector |
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