CN106847950A - Ion implanting prepares Infrared Detectors of Titanium oxide electrode and preparation method thereof - Google Patents
Ion implanting prepares Infrared Detectors of Titanium oxide electrode and preparation method thereof Download PDFInfo
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- CN106847950A CN106847950A CN201710252825.6A CN201710252825A CN106847950A CN 106847950 A CN106847950 A CN 106847950A CN 201710252825 A CN201710252825 A CN 201710252825A CN 106847950 A CN106847950 A CN 106847950A
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- titanium oxide
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 150000002500 ions Chemical class 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 109
- 239000010408 film Substances 0.000 claims abstract description 72
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010936 titanium Substances 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 20
- TUDPMSCYVZIWFW-UHFFFAOYSA-N [Ti].[In] Chemical compound [Ti].[In] TUDPMSCYVZIWFW-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- -1 Nitrogen ion Chemical class 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 244000309464 bull Species 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to the Infrared Detectors that a kind of ion implanting prepares Titanium oxide electrode, thin film of titanium oxide is provided with supporting layer and connection metal, thin film of titanium oxide is included in the semiconductor oxide titanium film and the conductor indium titanium film in bridge leg region in bridge floor region, using titanium oxide as temperature-sensitive layer film, and ion implanting is carried out to partial oxidation titanium film, the partial oxidation titanium film is turned into conductor indium titanium film, instead of metal electrode of the prior art, process is simple, production capacity is higher.Further relate to the preparation method of above-mentioned detector; the the first protection layer film not covered by photoresistance above the step of being sequentially prepared thin film of titanium oxide, the first protective layer and photoresistance and removal thin film of titanium oxide is included on supporting layer; and the thin film of titanium oxide to exposing carries out ion implanting; the step of thin film of titanium oxide after ion implanting is conductor indium titanium film; also include removal photoresistance; the second protective layer is deposited, the step of carry out structure release.
Description
Technical field
Field is manufactured the invention belongs to the MEMS technique in semiconductor technology, and in particular to a kind of ion implanting system
Infrared Detectors of standby Titanium oxide electrode and preparation method thereof.
Background technology
Uncooled infrared detection technology is perceived and turned without the infra-red radiation (IR) of refrigeration system object to external world
Chemical conversion electric signal, in the technology of display terminal output, can be widely applied to national defence, space flight, medical science, production monitoring etc. after treatment
Various fields.Non-refrigerated infrared focal plane probe can be worked due to it under room temperature state, and with light weight, volume
Small, long lifespan, low cost, power are small, startup is fast and the advantages of good stability, meet civilian infrared system and part is military red
External system is to Long Wave Infrared Probe in the urgent need to developing in recent years swift and violent.Non-refrigerated infrared detector mainly includes surveying
Bolometer, pyroelectricity and thermopile detector etc., wherein the heat of the microbolometer based on MEMS (MEMS) manufacturing process
Meter (Micro-bolometer) Infrared Detectors is high due to its speed of response, manufacture craft it is simple and with IC manufacturing work
Skill is compatible, and with relatively low cross-talk and relatively low 1/f noise, frame speed higher works without chopper, is easy to large-scale production
The advantages of, it is one of mainstream technology of non-refrigerated infrared detector.
Micro-metering bolometer (Micro-bolometer) is to be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigerated infrared detector that resistance value occurs corresponding change and manufactures.Heat during work to being supported on heat insulating construction
Quick resistance two ends apply fixed bias voltage or current source, and the temperature change that incident IR radiation causes is so that thermistor hinders
Value reduces, so that electric current, voltage change, and the change of electric signal is read by reading circuit (ROIC).As temperature-sensitive electricity
The material of resistance must have temperature-coefficient of electrical resistance (TCR) higher, relatively low 1/f noise, appropriate resistance value and the electricity of stabilization
Performance, and easily prepared etc. require.
Vanadium oxide is typically now used as thermosensitive film, but vanadium oxide thermosensitive film and integrated circuit fabrication process
Compatibility is bad, and factory worries that vanadium oxide material and vanadium material stain equipment, it is necessary to the equipment after vanadium oxide technique, carry out list
Solely configure and isolated, prevent from staining other products and process equipment.
In addition, typically being electrically connected with heat-sensitive layer film by deposit metal electrodes in the prior art, heat-sensitive layer is experienced
Temperature change be delivered on the reading circuit of pedestal, in addition it is also necessary to metal electrode layer is processed by photoetching or etching portions of patterned,
Technique is cumbersome, and production capacity is relatively low, and waste of resource, and either first deposits thermosensitive film, redeposited electrode, still first deposits electricity
Pole, deposits thermosensitive film afterwards, and neither in one plane, one more plane influences on flatness with regard to bull point, technique step
It is rapid more, it is possible to bring more defects, influence yield.
The content of the invention
The present invention is directed to the deficiencies in the prior art, there is provided a kind of ion implanting prepares the infrared spy of Titanium oxide electrode
Device is surveyed, using titanium oxide as temperature-sensitive layer film, and ion implanting is carried out to partial oxidation titanium film, make the partial oxidation titanium thin
Film turns into conductor indium titanium film, and instead of metal electrode of the prior art, process is simple, production capacity is higher.
The technical scheme that above-mentioned technical problem is solved in the present invention is as follows：Ion implanting prepares the infrared spy of Titanium oxide electrode
Device, including a detector body for carrying the semiconductor pedestal of reading circuit and being electrically connected with the semiconductor pedestal are surveyed, it is special
Levy and be, the detector body includes metallic reflector, insulating medium layer, supporting layer and thin film of titanium oxide, the semiconductor
Pedestal is provided with metallic reflector and insulating medium layer, and the metallic reflector includes several metal derbies；
The insulating medium layer is provided with supporting layer, and the supporting layer is provided with anchor point hole and through hole, and the through hole terminates
In the metal derby, filled with connection metal in the anchor point hole and the through hole, on the supporting layer and the connection metal
Thin film of titanium oxide is provided with, the thin film of titanium oxide is included in the semiconductor oxide titanium film in bridge floor region and leading in bridge leg region
Body thin film of titanium oxide, the semiconductor oxide titanium film is provided with the first protective layer, the conductor indium titanium film and described
One protective layer is provided with the second protective layer.
Further, the connection metal is tungsten, aluminium or copper.
Further, the supporting layer is silicon nitride film, and thickness is
Intermediate ion injection of the present invention prepares the beneficial effect of the Infrared Detectors of Titanium oxide electrode：(1) it is thin using titanium oxide
Used as temperature-sensitive layer film, with preferable stability, resistance replys speed soon to film, and resistance memory effect is few；
(2) area of thermosensitive film is increased, so as to increase filling rate, and the thin film of titanium oxide ion in bridge leg region is noted
Become conductor indium titanium film after entering, more preferably, conductor indium titanium film region is equivalent to metal of the prior art for electric conductivity
Electrode layer, the thin film of titanium oxide on bridge floor is not ion implanted, and equivalent to temperature-sensitive layer film of the prior art, eliminates electrode
The independent deposition film of layer, the step such as photoetching and etching, significantly Simplified flowsheet step, cost-effective, improves production capacity；
The preparation method of the Infrared Detectors of Titanium oxide electrode is prepared the invention further relates to above-mentioned ion implanting, including it is following
Step：
Step 1：Metallic reflector is made on comprising reading circuit semiconductor pedestal, and figure is carried out to metallic reflector
Change is processed, it is graphical after metallic reflector form several metal derbies；Reading electricity on the metal derby and semiconductor pedestal
Road electrically connects；Then, insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The deposition of sacrificial layer on described insulating medium layer, and treatment is patterned to sacrifice layer, in figure
Anchor point hole, and the depositing support layer on the sacrifice layer after graphical treatment are formed on sacrifice layer after change treatment；
Step 3：Using photoetching and the method for etching, part supporting layer is etched away, supporting layer etch-stop is in the metal
Block, forms through hole, in the through hole and anchor point inner hole deposition product connection metal；
Step 4：The deposited oxide titanium film on supporting layer, and the first protective layer is deposited on thin film of titanium oxide, then,
Photoresistance is coated on first protective layer on bridge floor, the photoresistance overlay area is semiconductor oxide titanium film, and as detector
Temperature-sensitive layer film；
Step 5：The first protection not covered by photoresistance above thin film of titanium oxide is removed with engraving method (dry or wet)
Layer film, the first etching protection layer terminates at the thin film of titanium oxide, exposed portion thin film of titanium oxide, then oxygen again to exposing
Changing titanium film carries out ion implanting, and ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled between 1Kev~100Kev, ion
Concentration is controlled 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the thin film of titanium oxide after ion implanting is conductor indium
Titanium film；
Step 6：Removal photoresistance, deposits the second protection in conductor indium titanium film and the first protective layer not being etched
Layer；
Step 7：Using photoetching and the method for etching, treatment, the second etching protection layer are patterned to the second protective layer
Sacrifice layer is terminated at, then, structure release is carried out, is removed sacrifice layer and is formed micro-bridge structure.
Beneficial effects of the present invention：
(1) use thin film of titanium oxide as temperature-sensitive layer film, with preferable stability, resistance replys speed soon, resistance
Memory effect is few；
(2) manufacturing process of thin film of titanium oxide is compatible with CMOS processing procedures, without arranging special machine because of pollution problem
Platform, is substantially improved production capacity and efficiency；
(3) area of thermosensitive film is increased, so as to increase filling rate, and the thin film of titanium oxide ion in bridge leg region is noted
Become conductor indium titanium film after entering, more preferably, conductor indium titanium film region is equivalent to metal of the prior art for electric conductivity
Electrode layer, the thin film of titanium oxide on bridge floor is not ion implanted, and equivalent to temperature-sensitive layer film of the prior art, eliminates electrode
The independent deposition film of layer, the step such as photoetching and etching, significantly Simplified flowsheet step, cost-effective, improves production capacity；
(4) without deposit metal electrodes layer, a few deposition for plane, it becomes possible to further improve the flat of detector
Degree, effectively lifts fine ratio of product.
Further, the thickness of metallic reflector isMetallic reflector is 8~14 μm infrared to wavelength
The reflectivity of light is more than 99%.
Further, described insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
Further, the sacrifice layer is polyimides or amorphous carbon, and thickness is 1.0~2.5 μm.
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
Brief description of the drawings
Fig. 1 is metallic reflector in the present invention and insulating medium layer formation schematic diagram；
Fig. 2 is sacrifice layer in the present invention and supporting layer formation schematic diagram；
Fig. 3 is through hole formation schematic diagram in the present invention；
Fig. 4 is connection filling hole with metal schematic diagram in the present invention；
Fig. 5 is thin film of titanium oxide formation schematic diagram in the present invention；
Fig. 6 is the first protective layer formation schematic diagram in the present invention；
Fig. 7 is photoresistance formation schematic diagram in the present invention；
Fig. 8 is that intermediate ion of the present invention injects thin film of titanium oxide schematic diagram；
Fig. 9 is the second protective layer formation schematic diagram in the present invention；
Figure 10 is the graphical schematic diagram of the second protective layer in the present invention；
Figure 11 is panel detector structure schematic diagram in the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, semiconductor pedestal, 2, metallic reflector, 2-
1st, metal derby, 3, insulating medium layer, 4, sacrifice layer, 5, supporting layer, 6, anchor point hole, 7, through hole, 8, connection metal, 9, titanium oxide it is thin
Film, 9-1, semiconductor oxide titanium film, 9-2, conductor indium titanium film, the 10, first protective layer, the 11, photoresistance, 12, second protection
Layer.
Specific embodiment
Principle of the invention and feature are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
It is non-for limiting the scope of the present invention.
The present invention relates to the Infrared Detectors that ion implanting prepares Titanium oxide electrode, as shown in figure 11, prepared by ion implanting
The Infrared Detectors of Titanium oxide electrode, including one with reading circuit semiconductor pedestal 1 and be electrically connected with the semiconductor pedestal 1
The detector body for connecing, the detector body includes metallic reflector 2, insulating medium layer 3, supporting layer 5 and thin film of titanium oxide
9, the semiconductor pedestal 1 is provided with metallic reflector 2 and insulating medium layer 3, and the metallic reflector 2 includes several metals
Block 2-1；
The insulating medium layer 3 is provided with supporting layer 5, and the supporting layer 5 is provided with anchor point hole and through hole, the through hole end
The metal derby 2-1 is terminated in, filled with connection metal 8, the supporting layer 5 and the connection in the anchor point hole and the through hole
Metal 8 is provided with thin film of titanium oxide 9, the thin film of titanium oxide 9 be included in bridge floor region semiconductor oxide titanium film 9-1 and
The conductor indium titanium film 9-2 in bridge leg region, the semiconductor oxide titanium film 9-1 is provided with the first protective layer 10, described to lead
Body thin film of titanium oxide 9-2 and first protective layer 10 are provided with the second protective layer 12.It is described connection metal 8 be tungsten, aluminium or copper,
The supporting layer 5 is silicon nitride film, and thickness is
The preparation method such as Fig. 1-figure of the Infrared Detectors of Titanium oxide electrode is prepared the invention further relates to above-mentioned ion implanting
Shown in 11, ion implanting prepares the preparation method of the Infrared Detectors of Titanium oxide electrode, comprises the following steps：
Step 1：Comprising metallic reflector 2 is made on reading circuit semiconductor pedestal 1, and metallic reflector 2 is carried out
Graphical treatment, it is graphical after metallic reflector 2 form several metal derbies 2-1；The metal derby 2-1 and semiconductor pedestal
Reading circuit electrical connection on 1；Then, insulating medium layer 3 is deposited on patterned metal reflecting layer 2 is completed, as shown in Figure 1；
The thickness of metallic reflector 2 is Metallic reflector 2 is that the reflectivity of 8~14 μm of infrared light exists to wavelength
More than 99%, described insulating medium layer 3 is silicon nitride film or silicon oxide film, and thickness is
Step 2：The deposition of sacrificial layer 4 on described insulating medium layer 3, and treatment is patterned to sacrifice layer 4, in figure
Anchor point hole 6 is formed on sacrifice layer 4 after shapeization treatment, depositing support layer 5 on the sacrifice layer 4 after graphical treatment, such as Fig. 2 institutes
Show；The supporting layer 5 is silicon nitride film, and the sacrifice layer 4 is polyimides, and the thickness of the sacrifice layer 4 is 1.0~2.5 μ
M, the thickness of the supporting layer 5 is
Step 3：Using photoetching and the method for etching, part supporting layer 5 is etched away, the etch-stop of supporting layer 5 is in the gold
Category block 2-1, forms through hole 7, as shown in Figure 3；The deposition connection metal 8 in the through hole 7 and anchor point hole 6, as shown in Figure 4；Institute
It is aluminium, tungsten or copper to state connection metal 8.
Step 4：The deposited oxide titanium film 9 on supporting layer 5, as shown in Figure 5；And deposit first on thin film of titanium oxide 9
Protective layer 10, as shown in Figure 6；Then, photoresistance 11 is coated on bridge floor on the first protective layer 10, as shown in Figure 7；The photoresistance covers
Cover area is semiconductor oxide titanium film 9-1, and as the temperature-sensitive layer film of detector.
Step 5：The first protection that thin film of titanium oxide 9 is not covered by photoresistance above is removed with engraving method (dry or wet)
Layer film 10, the etch-stop of the first protective layer 10 is in the thin film of titanium oxide 9, exposed portion thin film of titanium oxide 9, then again to dew
The thin film of titanium oxide 9 for going out carries out ion implanting, as shown in Figure 8；Ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled in 1Kev
Between~100Kev, ion concentration is controlled 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the oxygen after ion implanting
Change titanium film be conductor indium titanium film 9-2, the conductor indium titanium film 9-2 equivalent to metal electrode layer in the prior art,
Possess good electric conductivity, the temperature change that the temperature-sensitive layer film is experienced is delivered to reading circuit in time.
Step 6：Removal photoresistance 11, deposits on conductor indium titanium film 9-2 and the first protective layer 10 not being etched
Second protective layer 12, as shown in Figure 9.
Step 7：Using photoetching and the method for etching, treatment, the second protective layer 12 are patterned to the second protective layer 12
Etch-stop in sacrifice layer 4, as shown in Figure 10；Then, structure release is carried out, is removed sacrifice layer 4 and is formed micro-bridge structure, such as Figure 11
It is shown.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (8)
1. ion implanting prepares the Infrared Detectors of Titanium oxide electrode, including a semiconductor pedestal with reading circuit and with institute
State the detector body of semiconductor pedestal electrical connection, it is characterised in that the detector body includes that metallic reflector, insulation are situated between
Matter layer, supporting layer and thin film of titanium oxide, the semiconductor pedestal are provided with metallic reflector and insulating medium layer, and the metal is anti-
Penetrating layer includes several metal derbies；
The insulating medium layer is provided with supporting layer, and the supporting layer is provided with anchor point hole and through hole, and the through hole terminates at institute
Metal derby is stated, filled with connection metal in the anchor point hole and the through hole, the supporting layer and the connection metal are provided with
Thin film of titanium oxide, the thin film of titanium oxide is included in the semiconductor oxide titanium film and the conductor oxygen in bridge leg region in bridge floor region
Change titanium film, the semiconductor oxide titanium film is provided with the first protective layer, and the conductor indium titanium film and described first protect
Sheath is provided with the second protective layer.
2. ion implanting according to claim 1 prepares the Infrared Detectors of Titanium oxide electrode, it is characterised in that the company
Metal is connect for tungsten, aluminium or copper.
3. ion implanting according to claim 1 prepares the Infrared Detectors of Titanium oxide electrode, it is characterised in that its feature
It is that the supporting layer is silicon nitride film, thickness is
4. the ion implanting described in any one of claim 1-3 prepares the preparation method of the Infrared Detectors of Titanium oxide electrode, its
It is characterised by, comprises the following steps：
Step 1：Metallic reflector is made on comprising reading circuit semiconductor pedestal, and place is patterned to metallic reflector
Reason, it is graphical after metallic reflector form several metal derbies；Reading circuit electricity on the metal derby and semiconductor pedestal
Connection；Then, insulating medium layer is deposited on patterned metal reflecting layer is completed；
Step 2：The deposition of sacrificial layer on described insulating medium layer, and treatment is patterned to sacrifice layer, graphically locating
Form anchor point hole on sacrifice layer after reason, and depositing support layer on sacrifice layer after graphical treatment；
Step 3：Using photoetching and the method for etching, part supporting layer is etched away, supporting layer etch-stop is in the metal derby, shape
Into through hole, in the through hole and anchor point inner hole deposition product connection metal；
Step 4：The deposited oxide titanium film on supporting layer, and the first protective layer is deposited on thin film of titanium oxide, then, first
Photoresistance is coated on the bridge floor of protective layer, the photoresistance overlay area is semiconductor oxide titanium film, and as the heat of detector
Photosensitive layer film；
Step 5：The first protective layer not covered by photoresistance above thin film of titanium oxide is removed with engraving method (dry or wet) thin
Film, the first etching protection layer terminates at the thin film of titanium oxide, and exposed portion thin film of titanium oxide, the thin film of titanium oxide to exposing enters
Row ion implanting, ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled between 1Kev~100Kev, and ion concentration is controlled 1
×1013ions/cm2~1 × 1021ions/cm2Between, the thin film of titanium oxide after ion implanting is conductor indium titanium film；
Step 6：Removal photoresistance, the second protective layer is deposited in conductor indium titanium film and the first protective layer not being etched；
Step 7：Using photoetching and the method for etching, treatment is patterned to the second protective layer, the second etching protection layer terminates
In sacrifice layer, then, structure release is carried out, remove sacrifice layer and form micro-bridge structure.
5. ion implanting according to claim 4 prepares the preparation method of the Infrared Detectors of Titanium oxide electrode, its feature
It is that the thickness of metallic reflector isMetallic reflector is the reflectivity of 8~14 μm of infrared light to wavelength
More than 99%.
6. ion implanting according to claim 4 prepares the preparation method of the Infrared Detectors of Titanium oxide electrode, its feature
It is that described insulating medium layer is silicon nitride film or silicon oxide film, and thickness is
7. ion implanting according to claim 4 prepares the preparation method of the Infrared Detectors of Titanium oxide electrode, its feature
It is that the sacrifice layer is polyimides or amorphous carbon, thickness is 1.0~2.5 μm.
8. ion implanting according to claim 4 prepares the preparation method of the Infrared Detectors of Titanium oxide electrode, its feature
It is that first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx.
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| CN107389217A (en) * | 2017-06-20 | 2017-11-24 | 西安交通大学 | A kind of temperature sensor chip based on ultra-high resistance temperature coefficient amorphous carbon film |
| CN108917942A (en) * | 2018-09-26 | 2018-11-30 | 烟台睿创微纳技术股份有限公司 | A kind of non-refrigerated infrared detector and preparation method thereof |
| CN111504477A (en) * | 2020-05-06 | 2020-08-07 | 珠海格力电器股份有限公司 | Infrared temperature sensor, manufacturing method thereof and temperature detection device |
| CN112071956A (en) * | 2020-09-08 | 2020-12-11 | 山西国惠光电科技有限公司 | Preparation process of novel InGaAs infrared focal plane detector |
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| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
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| US20050201983A1 (en) * | 2002-03-12 | 2005-09-15 | Seppo Yla-Herttuala | Engineered baculoviruses and their use |
| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107389217A (en) * | 2017-06-20 | 2017-11-24 | 西安交通大学 | A kind of temperature sensor chip based on ultra-high resistance temperature coefficient amorphous carbon film |
| CN108917942A (en) * | 2018-09-26 | 2018-11-30 | 烟台睿创微纳技术股份有限公司 | A kind of non-refrigerated infrared detector and preparation method thereof |
| CN108917942B (en) * | 2018-09-26 | 2020-09-11 | 烟台睿创微纳技术股份有限公司 | Uncooled infrared detector and preparation method thereof |
| CN111504477A (en) * | 2020-05-06 | 2020-08-07 | 珠海格力电器股份有限公司 | Infrared temperature sensor, manufacturing method thereof and temperature detection device |
| CN111504477B (en) * | 2020-05-06 | 2021-03-26 | 珠海格力电器股份有限公司 | Infrared temperature sensor, manufacturing method thereof and temperature detection device |
| CN112071956A (en) * | 2020-09-08 | 2020-12-11 | 山西国惠光电科技有限公司 | Preparation process of novel InGaAs infrared focal plane detector |
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