CN101439841A - Non-refrigeration infrared image sensor chip and preparation thereof - Google Patents
Non-refrigeration infrared image sensor chip and preparation thereof Download PDFInfo
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- CN101439841A CN101439841A CNA2008102405948A CN200810240594A CN101439841A CN 101439841 A CN101439841 A CN 101439841A CN A2008102405948 A CNA2008102405948 A CN A2008102405948A CN 200810240594 A CN200810240594 A CN 200810240594A CN 101439841 A CN101439841 A CN 101439841A
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Abstract
The invention discloses an uncooled infrared image sensor chip, which belongs to the technical field of the preparation of infrared image sensor. The uncooled infrared image sensor chip comprises a sensor substrate, the sensor substrate is integrated with a plurality of infrared-sensitive pixel unit arrays, each infrared-sensitive pixel unit comprises a group of elastic suspension beams and an infrared-sensitive resonator, the elastic suspension beams are fixed on the sensor substrate through an anchor point, the infrared-sensitive resonator is connected with the elastic suspension beams and consists of a resonant diaphragm and an excitation electrode, and the resonant diaphragm is locally superposed with an infrared-sensitive material layer with the thermal expansion coefficient different from that of the resonant diaphragm. The infrared-sensitive pixel units of the uncooled infrared image sensor chip adopt the infrared-sensitive resonators, have a simple process, are easy to obtain a higher rate of finished products, and realize the manufacturing of an array type uncooled infrared image sensor on a chip.
Description
Technical field
The invention relates to the technology of preparing of infrared image sensor, be specifically related to a kind of non-refrigeration infrared image sensor chip and preparation method thereof.
Background technology
Utilize any object that the characteristics of infra-red radiation are all arranged,, can realize infrared detection by detection to variations in temperature.Further, utilizing the infrared image sensor that is made of the infrared-sensitive unit is that the infrared imaging system of core devices can realize the infrared imaging to object.The un-cooled infrared focal plane array imageing sensor is a kind of core devices of infrared imaging.Compare with the refrigeration mode infrared imagery technique, non-refrigeration infrared image sensor has a series of advantages such as volume, power consumption, cost.But also there is gap aspect sensitivity and the resolution ratio.
The infrared-sensitive pixel cell that at present common un-cooled infrared focal plane array image sensor chip adopts has modes such as thermal strain minute surface, infrared strain electric capacity, PN junction voltage sampling.Thermal strain reflection mirror image sensor pixel cells need be used with visible light source and ccd video camera, and system bulk is bigger, and the non-infrared energy that radiation of visible light brings can influence transducer sensitivity.And the one side of imaging array chip is wanted responsive infra-red radiation during work, and another side will form signal output by reflect visible light.Need be on a large tracts of land suspended membrane for obtaining sufficiently high sensitivity with the preparation of a large amount of unit, complex process, yield rate are difficult to guarantee; And owing to lack the heat radiation approach, the time response of sensor is poor, and it is more serious to crosstalk between pixel.Infrared strain capacitor array sampling infrared sensor can directly be read the signal of telecommunication, but limited by Pixel Dimensions, and the area of each capacitor cell is smaller, and capacitance change is also corresponding less, and transducer sensitivity is restricted.The distribution capacity that goes between between cell array also can bring noise, reduces the sensitivity of imageing sensor.The temperature characterisitic that adopts PN junction voltage has signal as the sensing unit of infrared sensor and handles relative characteristic of simple, and this sensor unit adopts a plurality of PN junction series systems to obtain to compare higher sensitivity usually.The biased electrical that PN junction voltage is sampled fails to be convened for lack of a quorum sensor unit and wire temperature is raise, and reduces the sensitivity of infrared image sensor.
Summary of the invention
At deficiency of the prior art, the invention provides a kind of non-refrigeration infrared image sensor chip that adopts the infrared-sensitive resonant body as the infrared-sensitive pixel cell.
Technical scheme of the present invention is:
A kind of non-refrigeration infrared image sensor chip, comprise a sensor substrate, integrated several infrared-sensitive pixel unit array on described sensor substrate, it is characterized in that, each infrared-sensitive pixel cell comprises one a group of resilient suspension beam and an infrared-sensitive resonant body, described resilient suspension beam is fixed on the sensor substrate by anchor point, the infrared-sensitive resonant body links to each other with above-mentioned resilient suspension beam, described infrared-sensitive resonant body comprises a resonant iris and an excitation electrode, on described resonant iris local be provided with one with the materials having different thermal expansion coefficient layer of resonant iris.
Described resonant iris can be a silicon nitride or polysilicon chip, periphery at described silicon nitride or polysilicon chip is provided with some openings, the marginal portion that makes silicon nitride or polysilicon chip is as the resilient suspension beam, and above-mentioned resilient suspension beam is fixed on the sensor substrate by four anchor points.
On described silicon nitride or polysilicon chip, be coated with a patterned metal level.Wherein, the place is provided with cross opening in the middle position of described silicon nitride or polysilicon chip, and described patterned metal level is rectangular box-like, this rectangle frame metal level be arranged on above-mentioned cross opening around.
Or described patterned metal level is cross, and it is positioned at the central authorities of silicon nitride or polysilicon chip, matches with the diagonal of silicon nitride or polysilicon chip.
Described excitation electrode by the drive electrode of resonant iris lower surface and with it the drive electrode of corresponding sensor substrate upper surface form.
A kind of preparation method of non-refrigeration infrared image sensor chip, its step comprises:
1) selecting monocrystalline silicon or quartz is sensor substrate;
2) physical vapor deposition prepares the array lead-in wire of infrared-sensitive pixel cell;
3) low pressure chemical vapor deposition prepares sacrifice layer, the excitation electrode of preparation infrared-sensitive resonant body;
4) pecvd silicon nitride, the resonant iris and the resilient suspension beam of preparation infrared-sensitive resonant body;
5) physical vapor deposition PVD and photoetching form the metallic pattern on the resonant iris;
6) structure discharges, and makes non-refrigeration infrared image sensor chip.
Compared with prior art, the invention has the beneficial effects as follows:
The pixel cell of non-refrigeration infrared image sensor chip of the present invention adopts the infrared-sensitive resonant body, it is advantageous that:
1, do not have in the infrared-sensitive resonant body in the thermal strain chip structure large tracts of land hollow out suspending film structure, do not have the little gap large tracts of land structure in the condenser type chip structure, the reasonable difficulty of process is lower, is easy to obtain than high finished product rate.
2, adopt silicon MEMS technology, the forming array structure of duplicating synchronously that is easy to carry out the unit forms infrared image sensor.
3, the infrared-sensitive resonant body adopts static to drive, and is equivalent to a kind of capacitance structure and does not consume active power, and self does not generate heat.Except that a small amount of lead resistance consumption, there is not the infrared detection unit self-temperature rising problem that causes that drives.For example, under the continuous duty, cell capacitance 1pF, capacitive reactance Zc=1/2 π f C=218K Ω (f=5.0MHz); Electric current is 2 μ A during driving voltage 3-5V.Suppose lead resistance 30 Ω, the lead-in wire consumed power is (2 * 10
-6)
2* 30=1.2 * 10
-10W amounts to the about 0.12mW of lead-in wire power consumption during mega pixel.And the sampling current of PN junction sensitive structure just has 3 * 0.5V * 0.1 μ A=0.15 μ W when being 0.1 μ A on the pixel cell of three PN junctions, and the only sampling power consumption during mega pixel just reaches 0.15 watt, and is bigger more than 1000 times than capacitor sampling structure.
4, by reading change of resonance frequency amount reflection infra-red radiation situation, be a kind of accurate numeral output, under identical sensitivity situation, need carry out the highly sensitive amplification of low noise, lead-in wire and the interference of inter-pixel signal of small signal simulation amount and the problem that other noise directly influences sensitivity when not existing electric capacity and thermoelectricity to wait other infrared sensor work.Therefore, the infrared-sensitive resonant body very is fit to constitute the pixel cell of infrared image sensor.
When with infrared optical system with the infra-red radiation object image-forming when constituting on the non-refrigeration infrared image sensor chip by m * n pel array, the radiation position of amount of infrared radiation that each pixel cell is subjected to and object different parts has corresponding relation; Be the infra-red radiation difference that is subjected on each pixel, the resonant frequency of each resonant element changes then different.The resonant frequency variable quantity V-F change-over circuit of each pixel cell is become luminance signal can be obtained a width of cloth and resemble with the infra-red radiation object that gray scale shows.
Because microelectronic processing technique has been adopted in the manufacturing of non-refrigeration infrared image sensor pixel cell, therefore, can produce the array that the identical pixel cell of structure is formed as making integrated circuit, thereby constitute non-refrigeration infrared image sensor chip.
Description of drawings
Fig. 1 is the vertical view of square infrared-sensitive pixel cell in the embodiment of the invention;
Fig. 2 is the cutaway view of Fig. 1 infrared-sensitive pixel cell;
Fig. 3 is the stereogram of Fig. 1 infrared-sensitive pixel cell;
Fig. 4 is the vertical view of another square infrared-sensitive pixel cell in the embodiment of the invention;
Fig. 5 is the local wiring schematic diagram of infrared-sensitive pixel unit array of the present invention;
Fig. 6 is the circuit block diagram of infrared-sensitive pixel cell feedback voltage detection method of the present invention;
Fig. 7 is the circuit block diagram of infrared-sensitive pixel cell phase-locked loop frequency detection method of the present invention;
Fig. 8 is the preparation technology of non-refrigeration infrared image sensor chip of the present invention.
Among the figure, 1-silicon nitride resonant iris; The opening that 2-resonant iris periphery is provided with; 3-resilient suspension beam; 4-anchor point; 5-resonant iris extraction electrode; Metal film on 6-silicon nitride resonant iris; The set cross opening of 7-diaphragm core; The drive electrode of 8-substrate upper surface; The drive electrode of 9-resonant iris lower surface; 10-sensor substrate; The pressure welding point of 11-imageing sensor pixel extraction electrode; Infrared-sensitive pixel cell in 12-infrared-sensitive pixel unit array.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Adopt microelectromechanical systems (MEMS) technology to prepare the infrared-sensitive resonant body, wherein, the infrared-sensitive resonant body is made of the different two layers of material of thermal coefficient of expansion (CTE), is the good material of infrared absorption characteristic towards infrared one deck.The operation principle of infrared-sensitive resonant body is, adds driving voltage during work between resonant body electrode and bottom electrode, makes resonator body in resonant condition.Temperature raises when resonance structure is subjected to infrared radiation, and the difference of thermal coefficient of expansion causes the two materials on the resonant body partly to produce stress, and promptly Young's modulus of elasticity (E) changes.Because resonant frequency (ω) is proportional with elastic modelling quantity, so the change of elastic modelling quantity will cause the change of resonant frequency.On the other hand, during variations in temperature the deformation of two material structures different with the hanging beam of homogenous material formation, the result causes the resilient suspension beam to be stretched or compressed, coefficient of elasticity changes, and causes that the resonant frequency of resonant body changes.Utilize this principle,, realize detection amount of infrared radiation by calculating and verify the relation that just can set up amount of infrared radiation (M) and resonant frequency.Because it is in a vacuum packed during infrared image sensor chip work, the damping of resonant body is very little, has very high Q value, as long as resonant frequency has skew very in a small amount under the infra-red radiation heat effect, significant change will take place in the capacitance structure impedance that resonant body and bottom electrode constitute, for signal processing circuitry provides bigger input signal.Follow the tracks of change of resonance frequency by phase-locked loop circuit, utilize the relation of voltage-controlled oscillator input voltage and frequency change in the phase-locked loop circuit just can obtain the relation of the infrared radiant heat and the signal of telecommunication, realization is to infrared detection.Also can directly detect change of resonance frequency, obtain the relation of resonant frequency and amount of infrared radiation with frequency spectrograph.
The infrared-sensitive resonant body of forming with silicon nitride material and metal material is an example, specifies the pixel cell of non-refrigeration infrared image sensor of the present invention.
With reference to figure 1, Fig. 2 and Fig. 3, diaphragm absorbs infrared energy when silicon nitride resonant iris 1 is subjected to infra-red radiation, and temperature raises.Frame type metal level 6 thermal coefficient of expansions make silicon nitride resonant iris 1 big with the other parts of the double layer material partial volume expansion ratio silicon nitride resonant iris 1 of metal level 6 formations than silicon nitride resonant iris 1 material coefficient of thermal expansion coefficient height.The volumetric expansion meeting stretches hanging beam, and rigidity changes, and makes the vibration frequency off-resonance frequency of resonant body.The effect of silicon nitride resonant iris central cross type opening is that the diaphragm core becomes four triangle hanging structures, reduces the negative function of two material expansion effect.The peripherally ported effect of silicon nitride resonant iris is to form the resilient suspension girder construction that links to each other with resonant iris, the stress of double layer material structure just all is applied on the hanging beam 3 when silicon nitride resonant iris 1 occurrence temperature changes, and improves whole resonant element structure to infrared sensitivity characteristic.
With reference to figure 1, silicon nitride resonant iris of the present invention be shaped as a square, cross opening is set and some openings is set at its place, middle position at periphery, metal level be shaped as a rectangle frame.
The principle that the double layer material structure graph design of resonant body is followed is, both avoided the excessive INFRARED ABSORPTION that influences the nitrogenize silicon chip of metal level area in the double layer material structure, avoid the unreasonable stress in double layer material district that causes of metal pattern configuration not act on the hanging beam effectively again, and then show heat radiation well and make the resonant frequency of resonant body change.To greatest extent amount of infrared radiation is changed into and can change, realize detection amount of infrared radiation by the resonant frequency of electrical signal detection.
With reference to figure 4, the place is provided with cross metal level in nitrogenize silicon chip of the present invention middle position, at its periphery some openings is set.Use right-angled intersection figure metal level, formation runs through nitrogenize silicon chip 1 cornerwise double layer material structure, its effect is to make infra-red radiation cause that the double layer material volumetric expansion produces bigger stress to hanging beam, improves the susceptibility of whole resonant element structure to infra-red radiation.
The infrared-sensitive pixel unit array is one and is made of m * n infrared-sensitive pixel cell.With reference to figure 5, before infrared-sensitive pixel cell manufacturing process, on substrate, adopt and can realize that promptly cell signal draws, the multilayer wiring technology that does not influence cell operation is again made the lead-in wire of each unit.Keep a determining deviation to be used for laying lead-in wire among Fig. 5 between each pixel cell.This graphic designs has three design considerations: the firstth, and wiring can cause the unevenness of substrate surface, can cause the sensitive structure air spots smooth if be routed in below the sensing unit, brings residual stress to influence the mechanical characteristic of structure; Also can make between the pole plate that drives capacitance structure and form non-uniform electric field, influence mode of oscillation.Second design considers it is to reduce technology difficulty, need not carry out carrying out flatening process after the two-layer electrode wiring that pixel draws on the substrate.The 3rd design considers it is can make pixel heat absorption and heat dissipation environment symmetry around wiring is evenly distributed on pixel, improves the stability of sensitive structure work.
For realizing to the excitation of resonant body and the detection of vibration frequency, one deck polysilicon is arranged as the electrode on the resonant body below the silicon nitride film, by anchor point be connected at infrared-sensitive resonant body electrode.This electrode and bottom electrode have constituted the static excitation electrode pair of resonator.This has also constituted the capacitance structure that carries out the resonant frequency detection simultaneously to electrode.
The excitation of infrared-sensitive resonant body and resonant frequency detect multiple mode: as the feedback voltage detection method: be to adopt Control of Voltage vibrator (V-F) to produce pumping signal, be added in and make it enter resonant condition on the resonator electrode.Detect the duty of resonator with automatic tracking circuit, and export feedback voltage V f signal and give the V-F circuit, adjust output frequency in real time, make resonator be in resonant condition.Circuit theory is seen Fig. 6.Because feedback voltage is directly related with resonant frequency, utilize the relation of resonant frequency and infra-red radiation, just can set up the relation of feedback voltage and amount of infrared radiation.This method can realize the real-time detection to infra-red radiation, and response speed is mainly determined by the thermal inertia of resonator.The unit mainly concerns precision and the decision of unit temperature variation causing resonant frequency variable quantity by the V-F of V-F circuit to infrared sensitivity.
Or, with reference to figure 7, adopt the phaselocked loop oscillating circuit that the infrared-sensitive resonant body is driven into resonant condition, just can obtain the relation of frequency and infra-red radiation by digital frequency meter electric circuit inspection resonant frequency.The precision of this detection mode mainly causes that by the resolution ratio and the unit temperature variation of frequency meter resonant frequency changes decision.
By calculate can obtain resonant body self infrared energy just from hanging beam be delivered to ten thousand of substrate energy/about, so the existence of substrate can not disturbed the response of resonant body structure to infra-red radiation.In addition and since the heat energy that resonant body obtains by hanging beam to time of anchor point conduction the heat balance time on the resonant body, therefore can not influence the precision of sampling substantially.
Operation principle based on the non-refrigeration infrared image sensor pixel cell of the present invention of infrared-sensitive resonant body is, when sensor is in standby (infrared dark) state by resonant body and below electrode add near the excitation of frequency sweep the resonant frequency at resonant body, determine the resonant frequency of resonant body in impedance by detecting electric capacity between hanging beam and the lower electrodes.
Non-refrigeration infrared image sensor pixel cell of the present invention itself be exactly one to the infrared infrared sensor that quantitatively detects.If the array that n * m non-refrigeration infrared image sensor pixel cell combined has just constituted an infrared image sensor with n * m resolution ratio.
The resonant body of forming with silicon nitride material and metal material is an example, and the manufacturing process of non-refrigeration infrared image sensor chip of the present invention is: (with common microelectronic technique silicon chip is substrate.If with quartz glass sector-meeting better effects if, because to infrared transparent, and heat transfer coefficient can reduce the speed of sensitive structure to the substrate heat radiation than low many of silicon, improves susceptibility)
Technological process sectional drawing with sensor unit shown in Figure 8 is an example:
1, monocrystalline silicon or quartz substrate;
2, the array lead-in wire of preparation infrared-sensitive pixel cell is shown in Fig. 8 (a)-Fig. 8 (c);
1) thermal oxide 100-200nm forms cushion;
2) lpcvd silicon nitride 150-180nm;
3) LPCVD polysilicon 180-200nm;
4)PVD?Ti?30-50nm；
5) photoetching extraction electrode figure;
6) RIE Ti/ polysilicon;
7) annealing;
3, resonant body excitation electrode/lead-in wire preparation is shown in Fig. 8 (d)-8 (e);
1) LPCVD silica 300-500nm;
2) lpcvd silicon nitride 180-200nm;
3) LPCVD polysilicon 100-150nm;
4)PVD?Ti?30-50nm；
5) photoetching hearth electrode and lead-in wire figure;
6) RIE Ti/ polysilicon forms hearth electrode;
7) annealing forms TiSi
2Electrode;
4, sacrifice layer preparation is shown in Fig. 8 (f);
1) LPCVD-PSG is 2.0-2.5 microns;
2) photoetching forms anchor point;
3) etching/corrosion PSG;
5, resonant iris preparation is shown in Fig. 8 (g)-Fig. 8 (h);
1) LPCVD polysilicon 80-100nm;
2) phosphorus injects polysilicon (60-80KeV, 1-3E15), forms conductive layer;
3) photoetching forms the resonant iris lower electrodes;
4) etch polysilicon;
5) PECVD low stress nitride silicon;
6) annealing, active ions are adjusted stress;
6, the preparation of the metal on the resonant iris is shown in Fig. 8 (i);
1) photoetching forms pressure welding point;
2) RIE silicon nitride/polysilicon/PSG;
3)PVD?Cr/Au〔10-30nm/90—110nm〕；
4) photoetching forms the metallic pattern on the resonant iris;
5) corrosion Au/Cr;
6) alloy;
7, structure discharges, shown in Fig. 8 (j);
1) photoetching forms resonant body;
2) etch silicon nitride/polysilicon;
3) HF corrosion PSG sacrifice layer discharges resonant body.
In the foregoing description, the metal that is used to form silicide also can be Co, Ni etc. except that Ti; Low stress nitride silicon chip as resonant body also can prepare with the lpcvd silicon nitride method of Silicon-rich; Metal lead wire also can use Al, Al/Si etc. except that Au/Cr.
More than by specific embodiment non-refrigeration infrared image sensor chip provided by the present invention and preparation method thereof has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (9)
1, a kind of non-refrigeration infrared image sensor chip, comprise a sensor substrate, integrated several infrared-sensitive pixel unit array on described sensor substrate, it is characterized in that, each infrared-sensitive pixel cell comprises one a group of resilient suspension beam and an infrared-sensitive resonant body, described resilient suspension beam is fixed on the sensor substrate by anchor point, the infrared-sensitive resonant body links to each other with above-mentioned resilient suspension beam, described infrared-sensitive resonant body comprises a resonant iris and an excitation electrode, on described resonant iris local be provided with one with the materials having different thermal expansion coefficient layer of resonant iris.
2, non-refrigeration infrared image sensor chip as claimed in claim 1, it is characterized in that, described resonant iris is a silicon nitride or polysilicon chip, periphery at described silicon nitride or polysilicon chip is provided with some openings, the marginal portion that makes silicon nitride or polysilicon chip is as the resilient suspension beam, and above-mentioned resilient suspension beam is fixed on the sensor substrate by four anchor points.
3, non-refrigeration infrared image sensor chip as claimed in claim 2 is characterized in that, is coated with a patterned metal level on described silicon nitride or polysilicon chip.
4, non-refrigeration infrared image sensor chip as claimed in claim 3, it is characterized in that, the place is provided with cross opening in the middle position of described silicon nitride or polysilicon chip, and described patterned metal level is rectangular box-like, this rectangle frame metal level be arranged on above-mentioned cross opening around.
5, non-refrigeration infrared image sensor chip as claimed in claim 3 is characterized in that, described patterned metal level is cross, and it is positioned at the central authorities of silicon nitride or polysilicon chip, matches with the diagonal of silicon nitride or polysilicon chip.
6, non-refrigeration infrared image sensor chip as claimed in claim 1 is characterized in that, described excitation electrode by the drive electrode of resonant iris lower surface and with it the drive electrode of corresponding sensor substrate upper surface form.
7, a kind of preparation method of non-refrigeration infrared image sensor chip, its step comprises:
1) selecting monocrystalline silicon or quartz is sensor substrate;
2) physical vapor deposition prepares the array lead-in wire of infrared-sensitive pixel cell;
3) low pressure chemical vapor deposition prepares sacrifice layer, the excitation electrode of preparation infrared-sensitive resonant body;
4) pecvd silicon nitride, the resonant iris and the resilient suspension beam of preparation infrared-sensitive resonant body;
5) physical vapor deposition PVD and photoetching form the metallic pattern on the resonant iris;
6) structure discharges, and makes non-refrigeration infrared image sensor chip.
8, method as claimed in claim 7 is characterized in that, described excitation electrode by the electrode of resonant iris lower surface and with it the electrode of corresponding sensor substrate upper surface form.
9, as claim 7 or 8 described methods, it is characterized in that the periphery of described resonant iris is provided with some openings, the marginal portion that makes resonant iris is as the resilient suspension beam, and above-mentioned resilient suspension beam is fixed on the sensor substrate by four anchor points.
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