CN114353958A - Resonant sensor - Google Patents
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- CN114353958A CN114353958A CN202210009206.5A CN202210009206A CN114353958A CN 114353958 A CN114353958 A CN 114353958A CN 202210009206 A CN202210009206 A CN 202210009206A CN 114353958 A CN114353958 A CN 114353958A
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- 239000013598 vector Substances 0.000 claims description 34
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 230000004044 response Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 24
- 238000010521 absorption reaction Methods 0.000 description 18
- 238000001514 detection method Methods 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 14
- 239000010410 layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
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Abstract
Disclosed herein is a resonance type sensor including: more than one supporting anchor connected with the resonant vibrator, wherein the supporting anchor comprises more than one connecting piece-shaped structure and more than one supporting structure; the connecting piece structure is used for being connected with the side wall of the resonant vibrator; the support anchor comprises a connecting piece structure and a support structure which are integrally formed, and the formed shape is other than rectangular and trapezoidal. According to the embodiment of the invention, the supporting anchor with the non-rectangular and non-trapezoidal structures is formed by the connecting piece structure and the supporting structure, so that the thermal resistance of the supporting anchor is improved while the supporting anchor bears stress, and the sensor meeting the requirements on sensitivity and response time is designed.
Description
Technical Field
This document relates to, but is not limited to, sensor technology, and more particularly to a resonant-type sensor.
Background
Nowadays, the application scenarios of infrared sensors are increasing, for example: the device can be used for non-contact rapid measurement of body temperature in the medical field, can be used for infrared spectrometers, thermal imagers, missile guidance and the like in the scientific research and military industry fields, and can be used for remote controllers and burglar alarms in the civil and commercial fields. The infrared sensor mainly comprises the following components according to the difference of working principles: photon detection type infrared sensors and thermal detection type infrared sensors. The photon detection type infrared sensor mainly utilizes a photosensitive material with a photoelectric effect, bound electrons in the photosensitive material can be excited into conduction electrons after the photosensitive material is irradiated by infrared photons, and then the electrical characteristics of the photosensitive material are changed; the photon detection type infrared sensor has the advantages of high response speed and high sensitivity, but generally needs to work at a low temperature, and has the problem that the realization difficulty of the batch production process of photosensitive materials is large. The thermal detection type infrared sensor mainly utilizes the property that the temperature of a material changes after the material absorbs infrared rays, and the property parameters of the material change due to the temperature change; compared with a photon detection type infrared sensor, the thermal detection type infrared sensor has the advantages of no need of refrigeration during working, small volume, benefit of batch production and the like, but has the problem of low sensitivity, and cannot meet the sensitivity requirements of partial application scenes.
With the progress of micro-nano processing technology and the gradual improvement of piezoelectric material preparation technology, a resonant infrared sensor based on a resonator structure is developed, and as a novel thermal detection infrared sensor, the resonant infrared sensor is realized based on the principle that the infrared thermal effect can cause the resonance frequency of a resonator to change.
The resonant infrared sensor needs to support the resonant vibrator through a support anchor and complete electric connection through the support anchor; currently, there are two main ways of setting up a support anchor: 1) the supporting anchor is arranged on the periphery of the resonant vibrator and is of a plane structure which is connected with the peripheral side surfaces of the resonant vibrator; 2) the support anchor comprises more than two rectangular or trapezoidal support structures, and one end of each rectangular or trapezoidal support structure is connected to one position on the periphery of the predetermined resonant vibrator. The design of the supporting anchor has the problem of fast heat dissipation, the temperature rise generated when the sensor receives infrared irradiation is restrained, the change of the resonant frequency of the sensor is reduced, and finally the sensitivity of the resonant infrared sensor cannot be improved. Although the thermal resistance of the supporting anchor can be increased by increasing the length of the rectangular supporting anchor, the heat loss is reduced, the overlong supporting anchor is not beneficial to layout design, and meanwhile, the supporting anchor bears larger stress, the service life of the supporting anchor is shortened, and further the service life of the resonant infrared sensor is shortened. It is a problem to be solved to design a resonant infrared sensor with high sensitivity and a service life satisfying the requirements.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a resonant sensor which can meet the requirements of the sensitivity and the response time of an infrared sensor.
An embodiment of the present invention provides a resonance type sensor, including: more than one supporting anchor connected with the resonator, wherein the supporting anchor comprises more than one connecting piece-shaped structure and more than one supporting structure; wherein the content of the first and second substances,
the connecting piece structure is used for being connected with the side wall of the resonant vibrator;
the connecting piece structure and the supporting structure contained in the supporting anchor are integrally formed, and the formed shape is the shape except the rectangle and the trapezoid.
The resonant sensor of the present application includes: more than one supporting anchor connected with the resonant vibrator, wherein the supporting anchor comprises more than one connecting piece-shaped structure and more than one supporting structure; the connecting piece structure is used for being connected with the side wall of the resonant vibrator; the support anchor comprises a connecting piece structure and a support structure which are integrally formed, and the formed shape is other than rectangular and trapezoidal. According to the embodiment of the invention, the supporting anchor with the non-rectangular and non-trapezoidal structures is formed by the connecting piece structure and the supporting structure, so that the thermal resistance of the supporting anchor is improved while the supporting anchor bears stress, and the sensor meeting the requirements on sensitivity and response time is designed.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a block diagram of a resonant sensor according to an embodiment of the present invention;
fig. 2 is a perspective view of a resonance type infrared sensor of an application example of the present invention;
fig. 3 is a top view of the resonance type infrared sensor shown in fig. 2 to which the present invention is applied;
fig. 4 is a perspective view of another resonance type infrared sensor to which the present invention is applied;
fig. 5 is a perspective view of still another resonance type infrared sensor of an application example of the present invention;
FIG. 6 is a graph of the number of folds versus stress for an exemplary application of the present invention;
fig. 7 is a plan view of still another resonance type infrared sensor according to an application example of the present invention;
fig. 8 is a plan view of still another resonance type infrared sensor according to an application example of the present invention;
fig. 9 is a plan view of still another resonance type infrared sensor according to an application example of the present invention;
fig. 10 is a plan view of still another resonance type infrared sensor according to an application example of the present invention;
fig. 11 is a plan view of still another resonance type infrared sensor according to an application example of the present invention;
fig. 12 is a perspective view of another resonance type infrared sensor to which the present invention is applied;
fig. 13 is a perspective view of still another resonance type infrared sensor of an application example of the present invention;
fig. 14 is a bottom view of the resonance type infrared sensor shown in fig. 13 to which the present invention is applied;
fig. 15 is a plan view of still another resonance type infrared sensor according to an application example of the present invention;
fig. 16 is a plan view of still another resonance type infrared sensor as an example of application of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Fig. 1 is a block diagram of a resonant sensor according to an embodiment of the present invention, as shown in fig. 1, including: more than one supporting anchor connected with the resonant vibrator, wherein the supporting anchor comprises more than one connecting piece-shaped structure and more than one supporting structure; wherein the content of the first and second substances,
the connecting piece structure is used for being connected with the side wall of the resonant vibrator;
the support anchor comprises a connecting piece structure and a support structure which are integrally formed, and the formed shape is other than rectangular and trapezoidal.
In an exemplary embodiment, the supporting anchor in the embodiment of the present invention satisfies the basic requirement of supporting the resonator in terms of stress design; how the supporting anchor is designed to meet the stress can be set by a person skilled in the art according to experience and simulation results.
It should be noted that the connection of the supporting anchor and the resonator according to the embodiments of the present invention includes a physical connection and an electrical connection.
According to the embodiment of the invention, the supporting anchor with the non-rectangular and non-trapezoidal structures is formed by the connecting piece structure and the supporting structure, so that the thermal resistance of the supporting anchor is improved while the supporting anchor bears stress, and the sensor meeting the requirements on sensitivity and response time is designed.
In an illustrative example, an embodiment of the present invention support structure comprises one or any combination of the following shapes:
rectangular, trapezoidal, parallelogram, trapezoid, spiral, circular sector ring, and elliptical sector ring.
It should be noted that the oval sector ring in the embodiment of the present invention refers to a portion cut out from the oval ring. According to the embodiment of the invention, the shape of the supporting structure can be selected according to the preparation process, the shape of the resonator and the like, for example, when the resonator is circular, the supporting structure with a spiral structure, a circular sector ring shape or an elliptical sector ring shape is selected.
In an illustrative example, a connector structure of an embodiment of the invention includes more than one of the following shapes:
rectangular, trapezoidal, parallelogram, trapezoid, circular sector ring, and elliptical sector ring.
In an exemplary embodiment, the shape of the end surface connected to the resonator in the connector structure according to the embodiment of the present invention may be adjusted according to the shape of the resonator, and the adjusted end surface may be better connected to the side wall of the resonator.
In an illustrative example, a characteristic section line composed of a first characteristic point and a second characteristic point in the outer peripheral profile of the support anchor as end points in an embodiment of the present invention includes the following features:
more than one characteristic contour exists, and the included angle of the normal vectors of two characteristic sectional lines on the characteristic contour is larger than a preset angle;
the first characteristic point is a point which starts from a first starting point at a preset moment and arrives after displacement is carried out for a first preset duration in the first contour path through a preset speed; the second characteristic point is a point which starts from a second starting point at a preset moment and arrives after displacement of a first preset duration is carried out in a second contour path at a preset speed; the first contour path is a path from the first starting point along the feature contour to an intermediate point of the feature contour; the second contour path is a path from the second starting point along the feature contour to an intermediate point of the feature contour; on each feature contour, the first starting point and the second starting point are end points of the feature contour; the characteristic profile is: on the outer peripheral contour of the top view of the supporting anchor, after the contour line of the connecting position of any connecting piece structure and the side wall of the resonant vibrator is removed, the remaining outer peripheral contour; the first preset duration is greater than zero but less than a second preset duration, and the second preset duration is the duration from the first starting point to the middle point of the characteristic contour after the first starting point passes through the preset speed displacement in the first contour path.
It should be noted that, in the embodiment of the present invention, the first starting point and the second starting point are end points of the feature profile, which means that the first starting point and the second starting point are points at two ends of one feature profile, in other words, starting from the first starting point, after the displacement occurs along the feature profile and reaches the second starting and stopping point, the points through which the displacement process passes include all points of the feature profile.
In one illustrative example, the normal vector in embodiments of the invention includes:
projection of the velocity resultant vector on any straight line perpendicular to the characteristic sectional line;
the speed resultant vector is a resultant vector of the speed vector of the first characteristic point and the speed vector of the second characteristic point in each first preset time length; the velocity resultant vector is not parallel to the reference vector; the reference vector includes: any non-zero vector parallel to the feature stubs; the normal vector is the vector when the velocity vector is not parallel to the reference vector.
It should be noted that when the velocity resultant vector is parallel to the reference vector, the characteristic sectional line cannot be directed to the vector.
In an exemplary embodiment, the preset angle in the embodiment of the present invention is 30 °.
In an exemplary embodiment, the angle between the two different normal vectors is greater than 150 °.
In one illustrative example, embodiments of the invention:
the lengths of all the characteristic sectional lines are less than or equal to a first preset multiple of reference length;
at least the length of a preset percentage of the characteristic section lines in all the characteristic section lines is less than or equal to a second preset multiple of the reference length;
wherein the reference length is equal to the average of all characteristic stub lengths.
In an exemplary embodiment, the first preset multiple in the embodiment of the present invention is equal to 400 times.
In an exemplary embodiment, the preset percentage in the embodiment of the present invention is equal to 50%, and the second preset multiple is equal to 1.9.
In an illustrative example, embodiments of the invention may adjust the thickness of the support anchor according to stress requirements. In an exemplary embodiment, the thickness of the anchor in the region with a lower stress level is smaller than the thickness with a higher stress level, and the thermal resistance of the anchor can be improved by the thickness adjustment. The stress level of the embodiment of the invention can be determined by simulation.
In an exemplary example, the outer peripheral outline shape of the top view of the resonator oscillator of the embodiment of the present invention may be a rectangle, a tuning fork, a circle, an ellipse, a regular polygon, a trapezoid pentagon;
in an exemplary embodiment, when the driving method of the resonator oscillator according to the embodiment of the present invention is electrostatic driving, the detection method is capacitance detection or piezoresistive detection; in an exemplary embodiment, when the driving method of the resonator oscillator according to the embodiment of the present invention is piezoelectric driving, the detection method is piezoelectric detection.
In an exemplary embodiment, when the resonator is driven electrostatically and the detection mode is capacitive detection or piezoresistive detection, the resonator at least includes a resonator structure layer, and a material of the resonator structure layer includes one or any combination of the following: monocrystalline silicon, polycrystalline silicon, silicon carbide, polycrystalline silicon germanium and diamond.
In an exemplary embodiment, when the resonator oscillator according to the embodiment of the present invention is driven by piezoelectric and the detection mode is piezoelectric detection, the resonator oscillator includes at least an electrode and a piezoelectric composite layer; in one illustrative example, the composition of an electrode and piezoelectric composite layer according to embodiments of the invention includes: the piezoelectric ceramic is formed by stacking a bottom electrode and a piezoelectric material film, stacking a piezoelectric material film and a top electrode, and stacking the bottom electrode, the piezoelectric material film and the top electrode;
the piezoelectric material film is composed of a single layer or multiple layers of piezoelectric materials, and the piezoelectric materials of the layers can include: aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lead zirconate titanate, lithium tantalate, and the like; the electrodes are composed of one or more layers of conductive materials including conductive elements such as: gold, aluminum, copper, molybdenum, platinum, conductive compounds, and the like.
In one illustrative example, an embodiment of the present invention support anchor comprises an electrode membrane; the electrode thin film is composed of one or more layers of conductive materials including conductive simple substances such as gold, aluminum, copper, molybdenum, platinum, and conductive compounds.
In an exemplary embodiment, the support anchor of the present invention may be a multi-layer structure or a single-layer structure including only the electrode thin film.
In an illustrative example, the resonance type sensor according to the embodiment of the invention further includes an infrared absorption film;
in an exemplary example, the infrared absorption film in the embodiment of the present invention is located above the resonator, or the resonator exists as a composition of the infrared absorption film.
In an exemplary embodiment, when the infrared absorption film in the embodiment of the present invention is located above the resonator, the material of the infrared absorption film is any one or any combination of the following: vanadium oxide, amorphous silicon, black silicon, silicon oxide, and silicon nitride;
when the resonator is present as an infrared absorption film, the infrared absorption film structure is composed in a manner including:
the piezoelectric film is formed by stacking a bottom electrode, a piezoelectric material film and a metal bump array from bottom to top in sequence; or the like, or, alternatively,
the piezoelectric ceramic is formed by stacking a bottom electrode, a piezoelectric material film, a top electrode and a metal salient point array from bottom to top in sequence.
The stacking method in the embodiments of the present invention is the same as that in the related art, and is not described herein again.
In an illustrative example, the resonance type sensor in the embodiment of the present invention further includes a support beam connected to the support anchor.
The following is a brief description of the embodiments of the present invention by way of application examples, which are only used to illustrate the embodiments of the present invention and are not used to limit the scope of the present invention.
Application example
Fig. 2 is a perspective view of a resonance type infrared sensor to which the present invention is applied, and as shown in fig. 2, the resonance type infrared sensor includes: an infrared absorption film, a resonator, and a support anchor; wherein the content of the first and second substances,
the support anchor is connected with the resonant vibrator through a connecting piece structure, and the rectangular support structures are connected at an angle of 90 degrees to form a structure similar to a square wave in shape;
fig. 3 is a top view of the resonant infrared sensor shown in fig. 2, in which, as shown in fig. 3, a line is drawn in the top view from the geometric center of the resonant infrared sensor as a starting point, and the horizontal ray to the right is taken as the broadside direction of the resonant vibrator as the horizontal direction and the long side direction as the vertical direction, the number of the support structures through which the ray passes is the number of folding times of the support anchors, and the number of folding times of each support anchor in fig. 3 is 3; the embodiment of the invention comprises that the thicknesses of the connecting piece structure and the supporting structure are both h (not shown in the figure); a is the extension length of the support anchor in the horizontal direction at the leading-out end (connecting piece structure) of the resonant vibrator, b is the extension length of the support anchor in the horizontal direction at the leading-out end of the non-resonant vibrator, e is the width of the support anchor, l is the extension length of the support anchor in the vertical direction, x is the width of the resonant vibrator, and y is the length of the resonant vibrator; the two support anchors in the figure are symmetrical with respect to the geometric center of the resonance type infrared sensor.
Fig. 4 is a perspective view of another resonance type infrared sensor of an application example of the present invention, and fig. 5 is a perspective view of yet another resonance type infrared sensor of an application example of the present invention, as shown in fig. 4 and 5, the folding times of the supporting anchor are 4 and 5, respectively;
the application example of the invention assumes that infrared irradiation is the only heat source, ignores the absorption of the infrared by the resonant vibrator and the supporting anchor, ignores the heat loss caused by heat convection and heat radiation, assumes that the infrared sensor comprises two supporting anchors,the materials forming the support anchors are uniform at all positions and have the same heat conductivity coefficient in all directions, each support anchor is equivalent to a rectangular anchor with the same thermal resistance, the resonant vibrator and the infrared absorption film are approximately regarded as an isothermal body, the leading-out end face of the support anchor directly connected with the outside is approximately regarded as an isothermal face, and then the temperature T of the resonant vibrator and the infrared absorption film and the temperature T of the leading-out end face of the support anchor directly connected with the outside are equal0The temperature difference Δ T therebetween satisfies the following relation:
where Q is the amount of heat generated per unit time after the infrared absorption film absorbs infrared rays, and a is the cross-sectional area of the support anchor, which can be calculated by the following equation: a ═ eh;
i is the total length of an equivalent rectangular anchor of a support anchor of an embodiment of the present invention, which can be approximated by the following equation: i is approximately equal to a + (n-1) b + nl;
λ is taken as the thermal conductivity of the material comprising the support anchor of an embodiment of the present invention. The total thermal resistance R of the folded anchor can be approximated by:
from the above relational expression, it can be seen that when the heat Q generated per unit time after the infrared absorption film absorbs the infrared ray, the sectional area a of the support anchor according to the embodiment of the present invention, and the thermal conductivity λ of the material constituting the support anchor according to the embodiment of the present invention are constant, the temperature difference Δ T is proportional to the total length I of the equivalent rectangular anchors of the equal support anchors; the total length I of the equivalent rectangular anchor of the support anchor can be increased by increasing the folding times n, so that the thermal resistance R and the temperature difference delta T are increased, and the temperature T of the leading-out end face of the support anchor directly connected with the outside is increased0The temperature T of the resonant vibrator and the infrared absorption film can be increased at a certain time, so that the change of the resonant frequency of the resonant vibrator is increased, and the sensitivity of the sensor is improved. The sensitivity of the sensor can be adjusted in a large range by changing the folding times n, and based on the same procedure, the resonance of higher sensitivity, lower response speed, lower sensitivity and higher response speed can be realized on the same layoutBatch production of the infrared sensors.
In order to examine the influence of the change of the folding times n on the maximum Von Mises (Von-Mises) stress of the support anchor, the infrared absorption film and the electrode in the resonator are ignored, the thickness of the resonator is consistent with that of the support anchor, the constituent materials are all aluminum nitride, and the values of all geometric parameters are shown in table 1.
| Geometric parameters | Numerical value (micron) | Geometric parameters | Numerical value (micron) |
| a | 55 | b | 2.5 |
| e | 5 | l | 210 |
| x | 100 | y | 200 |
| h | 0.8 |
TABLE 1
FIG. 6 is a graph showing the relationship between the folding times and the stress according to an exemplary application of the present invention, and as shown in FIG. 6, the value of the Von-Mises stress at the maximum point of the Von-Mises stress of the sensor is obtained by finite element simulation under the condition of only considering the self weight of the sensor, when n is increased from 1 to 7, the total length I of the equivalent rectangular supporting anchor is increased by nearly 600%, and the maximum Von-Mises stress is increased by only 71%; in addition, the maximum Von-Mises stress can be further reduced by increasing the width of the support anchor near the point of maximum Von-Mises stress. In conclusion, the resonance type infrared sensor applied in the embodiment of the invention can simultaneously have higher sensitivity and lower maximum Von-Mises stress, and the lower maximum Von-Mises stress can ensure that the resonance type infrared sensor has longer fatigue life.
Fig. 7 is a top view of another resonance type infrared sensor according to an exemplary application of the present invention, and as shown in fig. 7, similar to the structure of the resonance type infrared sensor shown in fig. 3, the support structures of the resonance type infrared sensor in fig. 7 are connected by rounding, and stress concentration is effectively suppressed by the rounding of the support structures, so that the fatigue life of the resonance type infrared sensor is improved.
Fig. 8 is a top view of a resonant infrared sensor according to an exemplary application of the present invention, and as shown in fig. 8, the supporting anchor is partially engaged by the rectangular supporting structure shown in fig. 2, and partially engaged by the rectangular and trapezoidal structures, and the trapezoidal engagement portion can be understood as: the width of the rectangle at the joint position is increased to form a support structure with different widths, and the structure can reduce the maximum Von-Mises stress of the area by increasing the width of the anchor of the area with larger Von-Mises stress, thereby enhancing the fatigue resistance of the area.
Fig. 9 is a plan view of still another resonance type infrared sensor according to an applied example of the present invention, as shown in fig. 9, in which the support structure in the support anchor in fig. 9 is a spiral structure, unlike the resonance type infrared sensor described earlier; in an exemplary example, the center line of the spiral structure in the present application example may be a spiral broken line.
Fig. 10 is a plan view of still another resonance type infrared sensor according to an exemplary application of the present invention, as shown in fig. 10, in which the resonator is connected to only one support anchor connected to the resonator through a four-link structure; according to the embodiment of the invention, under the condition that the length of the folding anchor is longer and the total length of the equivalent rectangular anchor of the folding anchor is the same, the thermal resistance of the structure is higher than that of a sensor using a plurality of folding anchors, and the sensitivity of the sensor can be further improved.
Fig. 11 is a plan view of still another resonance type infrared sensor according to an application example of the present invention, in which, as shown in fig. 11, the resonator and the infrared absorption film are both circular, and the connecting member structure of the support anchor has one end connected to the resonator and the other end connected to the spiral support structure; in an illustrative example, the centerline of the helical support structure in embodiments of the present invention is an archimedean spiral.
Fig. 12 is a perspective view of another resonance type infrared sensor as an applied example of the present invention, and as shown in fig. 12, the composition of the supporting anchor is substantially the same as that of fig. 2, mainly except that the thickness of the supporting structure is set to different dimensions according to stress. In an exemplary embodiment, the invention applies the general folding type anchor with consistent thickness at any position for simulation, after the distribution situation of the stress level is obtained, the thickness of the anchor in the area with lower stress level is reduced, thereby improving the thermal resistance of the anchor; in an exemplary embodiment, the present invention is applied to a support beam disposed on a support anchor; the setting position can be a region with higher stress level, and the material of the support beam can be silicon dioxide; the thickness of the area with smaller Von-Mises stress in the support anchor can be reduced, so that the thermal resistance of the area can be improved, and the stress distribution condition in the support anchor can be improved by the support beam.
Fig. 13 is a perspective view of still another resonance type infrared sensor according to an exemplary application of the present invention, and as shown in fig. 13, the resonance type infrared sensor has a structure similar to that of fig. 2 except that a support anchor in fig. 13 includes two layers of a bottom electrode and a piezoelectric material, and a resonator is formed of a piezoelectric material and interdigital electrodes; the infrared absorption film comprises a resonant vibrator and consists of the resonant vibrator and a top metal bump array of the resonant vibrator; in an exemplary example, the present application example may form the infrared absorption film by stacking the following structures in order from bottom to top: interdigital electrodes, piezoelectric materials and metal bump array metamaterials; the application example processing technology of the invention can be compatible with the integrated circuit manufacturing technology, and is beneficial to realizing the integration of the resonant infrared sensor and the chip circuit.
Fig. 14 is a bottom view of the resonance type infrared sensor shown in fig. 13 according to an application example of the present invention, and as shown in fig. 14, the support anchor includes two layers of a bottom electrode and a piezoelectric material, and the resonator is composed of a piezoelectric material and interdigital electrodes.
Fig. 15 is a plan view of still another resonance type infrared sensor as an application example of the present invention, and as shown in fig. 15, the support structure in the support anchor in fig. 15 includes a rectangular shape and a circular fan ring shape, unlike the resonance type infrared sensor described earlier.
Fig. 16 is a plan view of still another resonance type infrared sensor as an application example of the present invention, and as shown in fig. 16, the support structure in the support anchor in fig. 16 includes a trapezoid, a rectangle, and a trapezoid, unlike the resonance type infrared sensor described earlier.
It will be understood by those of ordinary skill in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
Claims (9)
1. A resonant type sensor, comprising: more than one supporting anchor connected with the resonator, wherein the supporting anchor comprises more than one connecting piece-shaped structure and more than one supporting structure; wherein the content of the first and second substances,
the connecting piece structure is used for being connected with the side wall of the resonant vibrator;
the connecting piece structure and the supporting structure contained in the supporting anchor are integrally formed, and the formed shape is the shape except the rectangle and the trapezoid.
2. The resonant sensor of claim 1, wherein the support structure comprises one or a combination of any of the following shapes:
rectangular, trapezoidal, parallelogram, trapezoid, spiral, circular sector ring, and elliptical sector ring.
3. The resonant sensor of claim 1, wherein the connector structure comprises one or more of the following shapes:
rectangular, trapezoidal, parallelogram, trapezoid, circular sector ring, and elliptical sector ring.
4. A resonant sensor according to any one of claims 1 to 3, wherein a characteristic section line consisting of the first and second characteristic points as end points in the peripheral profile of the support anchor comprises the following characteristics:
more than one characteristic contour exists, and the included angle of the normal vectors of two characteristic sectional lines on the characteristic contour is larger than a preset angle;
the first characteristic point is a point which starts from a first starting point at a preset moment and arrives after displacement is carried out for a first preset duration in the first contour path through a preset speed; the second characteristic point is a point which starts from a second starting point at a preset moment and arrives after displacement of a first preset duration is carried out in a second contour path at a preset speed; the first contour path is a path from the first start point along the feature contour to an intermediate point of the feature contour; the second contour path is a path from the second starting point along the feature contour to an intermediate point of the feature contour; on each of the feature profiles, the first and second starting points are end points of the feature profile; the characteristic profile is: on the outer peripheral contour of the top view of the support anchor, after the contour line of the connecting position of any connecting piece structure and the side wall of the resonant vibrator is removed, the remaining outer peripheral contour; the first preset duration is greater than zero but less than a second preset duration, and the second preset duration is the duration from the first starting point to the middle point of the characteristic contour after passing through the preset speed displacement in the first contour path.
5. The resonant sensor of claim 4, wherein the normal vector comprises: projection of the velocity resultant vector on any straight line perpendicular to the characteristic sectional line;
the speed resultant vector is a resultant vector of the speed vector of the first characteristic point and the speed vector of the second characteristic point in each first preset time period; the velocity resultant vector is not parallel to a reference vector; the reference vector includes: any non-zero vector parallel to the feature sectional line; the normal vector is a vector when the velocity resultant vector is not parallel to the reference vector.
6. The resonant sensor of claim 4, wherein the predetermined angle is 30 °.
7. Resonant type sensor according to claim 4,
the lengths of all the characteristic sectional lines are less than or equal to a first preset multiple of reference length;
at least a preset percentage of the lengths of the feature section lines in all the feature section lines is less than or equal to a second preset multiple of the reference length;
wherein the reference length is equal to an average of all of the characteristic stub lengths.
8. Resonant-type sensor according to claim 7, characterized in that said first preset multiple is equal to 400 times.
9. The resonant sensor according to claim 7, wherein the preset percentage is equal to 50% and the second preset multiple is equal to 1.9.
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| CN202210009206.5A CN114353958B (en) | 2022-01-06 | Resonant sensor |
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| CN202210009206.5A CN114353958B (en) | 2022-01-06 | Resonant sensor |
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| CN112710402A (en) * | 2020-12-22 | 2021-04-27 | 武汉大学 | Resonant thermal infrared sensor and preparation method thereof |
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| CN101439841A (en) * | 2008-12-25 | 2009-05-27 | 中国传媒大学 | Non-refrigeration infrared image sensor chip and preparation thereof |
| WO2014075407A1 (en) * | 2012-11-19 | 2014-05-22 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN103708406A (en) * | 2013-12-12 | 2014-04-09 | 中国计量学院 | Resonant type infrared detector structure capable of isolating packaging stress and manufacturing method thereof |
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