CN114353958B - Resonant sensor - Google Patents
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- CN114353958B CN114353958B CN202210009206.5A CN202210009206A CN114353958B CN 114353958 B CN114353958 B CN 114353958B CN 202210009206 A CN202210009206 A CN 202210009206A CN 114353958 B CN114353958 B CN 114353958B
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Abstract
Disclosed herein is a resonant sensor including: more than one support anchors connected with the resonator element, the support anchors comprising more than one connector-shaped structure and more than one support structure; the connecting piece structure is used for being connected with the side wall of the resonant vibrator; the support anchors comprise a connector structure and a support structure that are integrally formed, and the formed shape is other than rectangular and trapezoidal. According to the embodiment of the invention, the supporting anchor with the non-rectangular and non-trapezoid structures is composed of the connecting piece structure and the supporting structure, so that the thermal resistance of the supporting anchor is improved while the supporting anchor is kept stressed, and the sensor meeting the requirements of sensitivity and response time is designed.
Description
Technical Field
This document relates to, but is not limited to, sensor technology, and more particularly to a resonant sensor.
Background
Today, infrared sensors are increasingly used in applications such as: the device can be used for non-contact rapid measurement of body temperature in the medical field, infrared spectrometers, thermal imagers, guided missile and the like in the scientific research and military fields, and remote controllers and burglar alarms in the civil commercial field. The infrared sensor is mainly divided into: photon-detecting type infrared sensors and thermal-detecting type infrared sensors. The photon detection type infrared sensor mainly uses a photosensitive material with photoelectric effect, and bound electrons in the photosensitive material can be excited into conduction electrons after being irradiated by infrared photons, so that the electrical characteristics of the photosensitive material are changed; the photon detection type infrared sensor has the advantages of high response speed and high sensitivity, but usually needs to work at low temperature, and has the problem of high difficulty in realizing the mass production process of the photosensitive material. The thermal detection type infrared sensor mainly utilizes the property that the temperature of a material changes after absorbing infrared rays, and the temperature change causes the change of the attribute parameters of the material; compared with photon detection type infrared sensors, the thermal detection type infrared sensor has the advantages of no need of refrigeration during operation, small volume, contribution to mass production and the like, but has the problem of lower sensitivity, and cannot meet the sensitivity requirements of part of application scenes.
Along with the progress of micro-nano processing technology and the gradual perfection of piezoelectric material preparation technology, a resonant type infrared sensor based on a resonator structure is developed and is realized on the basis of the principle that the infrared thermal effect can cause the resonance frequency of a resonator to change as a novel thermal detection type infrared sensor, and compared with the traditional thermal detection type infrared sensor, the infrared sensor has the advantages of accurate digital output, high anti-interference capability and the like.
The resonant type infrared sensor needs to support the resonant vibrator through a supporting anchor and complete electric connection through the supporting anchor; currently, there are two main ways of setting the support anchors: 1) The supporting anchors are arranged on the periphery of the resonant vibrator and are of a planar structure which is connected with the side surfaces of the periphery of the resonant vibrator; 2) The support anchors comprise more than two rectangular or trapezoidal support structures, one end of each rectangular or trapezoidal support structure is connected to one position around the predetermined resonator element. The support anchor design has the problem of quick heat dissipation, the temperature rise generated when the sensor receives infrared irradiation is restrained, the change of the resonance frequency of the sensor is reduced, and finally the sensitivity of the resonance type infrared sensor cannot be improved. Although the length of the rectangular supporting anchor is increased, the thermal resistance of the supporting anchor can be increased, and the heat dissipation is reduced, the overlong supporting anchor is unfavorable for layout design, and meanwhile, the supporting anchor can bear larger stress, the service life of the supporting anchor is reduced, and the service life of the resonant infrared sensor is further shortened. The resonant infrared sensor with high sensitivity and long service life is designed to be a problem to be solved.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a resonant sensor which can meet the requirements of sensitivity and response time of an infrared sensor.
The embodiment of the invention provides a resonant sensor, which comprises: one or more support anchors connected to the resonator element, the support anchors comprising one or more connector-shaped structures and one or more support structures; wherein,
The connecting piece structure is used for being connected with the side wall of the resonant vibrator;
the support anchor comprises the connecting piece structure and the support structure which are integrally formed, and the formed shape is other than rectangle and trapezoid.
The resonant sensor of the present application includes: more than one support anchors connected with the resonator element, the support anchors comprising more than one connector-shaped structure and more than one support structure; the connecting piece structure is used for being connected with the side wall of the resonant vibrator; the support anchors comprise a connector structure and a support structure that are integrally formed, and the formed shape is other than rectangular and trapezoidal. According to the embodiment of the application, the supporting anchor with the non-rectangular and non-trapezoid structures is composed of the connecting piece structure and the supporting structure, so that the thermal resistance of the supporting anchor is improved while the supporting anchor is kept stressed, and the sensor meeting the requirements of sensitivity and response time is designed.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate and do not limit the application.
FIG. 1 is a block diagram of a resonant sensor according to an embodiment of the present invention;
fig. 2 is a perspective view of an exemplary resonant infrared sensor to which the present invention is applied;
fig. 3 is a top view of the resonant infrared sensor shown in fig. 2, which is an example of the application of the present invention;
fig. 4 is a perspective view of another resonance type infrared sensor to which the present invention is applied;
fig. 5 is a perspective view of still another example of application of the present invention to a resonant type infrared sensor;
FIG. 6 is a graph of an exemplary fold count versus stress for an application of the present invention;
fig. 7 is a top view of still another resonant type infrared sensor according to an application example of the present invention;
fig. 8 is a top view of still another resonant type infrared sensor according to an application example of the present invention;
fig. 9 is a top view of still another resonant type infrared sensor according to an application example of the present invention;
fig. 10 is a top view of still another resonant type infrared sensor according to an application example of the present invention;
fig. 11 is a top view of still another resonant type infrared sensor according to an application example of the present invention;
fig. 12 is a perspective view of another resonance type infrared sensor to which the present invention is applied;
fig. 13 is a perspective view of still another infrared sensor of the resonant type, which is an application example of the present invention;
fig. 14 is a bottom view of the resonant infrared sensor shown in fig. 13, which is an example of the application of the present invention;
Fig. 15 is a top view of still another resonant type infrared sensor according to an application example of the present invention;
Fig. 16 is a top view of still another resonant type infrared sensor according to an application example of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in detail hereinafter with reference to the accompanying drawings. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be arbitrarily combined with each other.
The steps illustrated in the flowchart of the figures may be performed in a computer system, such as a set of computer-executable instructions. Also, while a logical order is depicted in the flowchart, in some cases, the steps depicted or described may be performed in a different order than presented herein.
FIG. 1 is a block diagram of a resonant sensor according to an embodiment of the present invention, as shown in FIG. 1, including: more than one support anchors connected with the resonator element, the support anchors comprising more than one connector-shaped structure and more than one support structure; wherein,
The connecting piece structure is used for being connected with the side wall of the resonant vibrator;
The support anchors comprise a connector structure and a support structure that are integrally formed, and the formed shape is other than rectangular and trapezoidal.
In an exemplary embodiment, the support anchors in the embodiments of the present invention meet the basic requirements for supporting the resonator element in stress design; how the support anchors achieve satisfactory stress design can be set by those skilled in the art based on experience and simulation results.
It should be noted that the connection between the support anchor and the resonator element in the embodiment of the present invention includes physical connection and electrical connection.
According to the embodiment of the invention, the supporting anchor with the non-rectangular and non-trapezoid structures is composed of the connecting piece structure and the supporting structure, so that the thermal resistance of the supporting anchor is improved while the supporting anchor is kept stressed, and the sensor meeting the requirements of sensitivity and response time is designed.
In one illustrative example, the support structure of embodiments of the present invention includes one or a combination of any of the following shapes:
Rectangular, trapezoidal, parallelogram, trapezoid, spiral structure, circular fan ring and elliptical fan ring.
It should be noted that, in the embodiment of the present invention, the elliptical fan ring refers to a portion cut from the elliptical ring. The embodiment of the invention can select the shape of the supporting structure according to the preparation process, the shape of the resonator and the like, for example, when the resonator is round, the supporting structure of a spiral structure, a circular fan ring shape or an elliptical fan ring shape is selected.
In one illustrative example, the connector structure of the present invention includes one or more of the following shapes:
rectangular, trapezoidal, parallelogram, trapezoid, circular sector ring, and elliptical sector ring.
In an exemplary embodiment, the shape of the end surface connected with the resonator in the connector structure of the embodiment of the invention can be adjusted according to the shape of the resonator, and the adjusted end surface can better realize the connection with the side wall of the resonator.
In an illustrative example, a feature intercept composed of a first feature point and a second feature point in the outer circumferential profile of a support anchor in an embodiment of the present invention as end points includes the following features:
More than one characteristic contour exists, and the included angle of normal vectors of two characteristic cross lines on the characteristic contour is larger than a preset angle;
The first characteristic point starts from a first starting point at a preset moment, and reaches the point after the displacement of a first preset duration is performed in a first contour path at a preset speed; the second characteristic point is a point which is reached after the displacement of the first preset duration is carried out in the second contour path through the preset speed from the second starting point at the preset moment; the first contour path is a path from the first starting point along the characteristic contour to a middle point of the characteristic contour; the second contour path is a path from the second starting point along the feature contour to a middle point of the feature contour; on each feature profile, the first starting point and the second starting point are the end points of the feature profile; the characteristic outline is as follows: removing contour lines of connecting positions of any connecting piece structure and the side wall of the resonator on the peripheral contour of the top view of the supporting anchor, and then removing the residual peripheral contour; the first preset time length is longer than zero and shorter than the second preset time length, and the second preset time length is the time length from the first starting point to the middle point of the characteristic profile after passing through the preset speed displacement in the first profile path.
It should be noted that, in the embodiment of the present invention, the first starting point and the second starting point are the end points of the feature profile, and the first starting point and the second starting point are the points at two ends of the feature profile, in other words, starting from the first starting point, after the displacement along the feature profile reaches the second starting point, the points through which the displacement process passes include all the points of the feature profile.
In one illustrative example, the normal vector in an embodiment of the present invention includes:
projection of the velocity sum vector on any line perpendicular to the feature intercept;
The speed vector sum is a sum vector of the speed vector of each first characteristic point and the speed vector of each second characteristic point in a first preset time length; the velocity sum vector is not parallel to the reference vector; the reference vector includes: any non-zero vector parallel to the feature cross-section; the normal vector is the vector when the velocity vector is not parallel to the reference vector.
When the velocity vector is parallel to the reference vector, the feature vector cannot be oriented to the vector.
In one illustrative example, the preset angle in the embodiment of the present invention is 30 °.
In one illustrative example, the angle between two different normal vectors is greater than 150 °.
In one illustrative example, embodiments of the present invention:
the lengths of all the characteristic sections are smaller than or equal to the reference length of the first preset multiple;
the length of at least a preset percentage of the characteristic section lines in all the characteristic section lines is smaller than or equal to the reference length of a second preset multiple;
Wherein the reference length is equal to the average of all the characteristic intercept lengths.
In one illustrative example, the first preset multiple in an embodiment of the present invention is equal to 400 times.
In one illustrative example, the preset percentage in the present embodiment is equal to 50% and the second preset multiple is equal to 1.9.
In one illustrative example, embodiments of the present invention may adjust the thickness of the support anchors based on stress requirements. In one illustrative example, the thickness of the support anchor in the region of lower stress levels is less than the thickness of the support anchor in the region of higher stress levels, and the thermal resistance of the support anchor can be increased by the thickness adjustment described above. The stress level of the embodiment of the invention can be determined through simulation.
In an illustrative example, the shape of the outline of the outer periphery of the top view of the resonator according to the embodiment of the present invention may be rectangular, tuning fork, circular, elliptical, regular polygonal, irregular quadrilateral, irregular pentagon;
In an exemplary embodiment, when the driving mode of the resonant vibrator is electrostatic driving, the detection mode is capacitive detection or piezoresistive detection; in an exemplary embodiment, when the driving mode of the resonant vibrator is piezoelectric driving, the detection mode is piezoelectric detection.
In an exemplary embodiment, when the resonator element is driven by static electricity and the detection mode is capacitive detection or piezoresistive detection, the resonator element at least includes a resonant structure layer, and the material of the resonant structure layer includes one or any combination of the following: single crystal silicon, polycrystalline silicon, silicon carbide, polycrystalline silicon germanium, diamond.
In an exemplary embodiment, when the resonator is driven by piezoelectricity and the detection mode is piezoelectricity detection, the resonator at least comprises an electrode and a piezoelectric composite layer; in one illustrative example, the composition of the electrode and piezoelectric composite layer of an embodiment of the present invention includes: the piezoelectric material thin film structure consists of a bottom electrode and a piezoelectric material thin film stack, consists of a piezoelectric material thin film and a top electrode stack, and consists of a bottom electrode, a piezoelectric material thin film and a top electrode stack;
The piezoelectric material film is composed of a single layer or multiple layers of piezoelectric materials, and the piezoelectric materials of each layer can comprise: aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lead zirconate titanate, lithium tantalate, and the like; the electrodes are composed of one or more layers of conductive material including conductive elements such as: gold, aluminum, copper, molybdenum, platinum, conductive compounds, and the like.
In one illustrative example, the support anchor of an embodiment of the present invention includes an electrode membrane; the electrode film is composed of one or more layers of conductive materials including conductive elements such as gold, aluminum, copper, molybdenum, platinum, and conductive compounds.
In an illustrative example, the support anchors of the present embodiments may be a multi-layered structure or a single-layered structure including only the electrode thin film.
In one illustrative example, the resonant sensor of the present embodiment further includes an infrared absorbing film;
in an illustrative example, the infrared absorbing film in the embodiment of the present invention is located above the resonator element, or the resonator element exists as a composition of the infrared absorbing film.
In an exemplary embodiment, when the infrared absorbing film is located above the resonator element, the infrared absorbing film is made of any one or any combination of the following materials: vanadium oxide, amorphous silicon, black silicon, silicon oxide, and silicon nitride;
When the resonator exists as a component of the infrared absorbing film, the component modes of the infrared absorbing film structure include:
The piezoelectric material thin film is formed by stacking a bottom electrode, a piezoelectric material thin film and a metal bump array in sequence from bottom to top; or alternatively, the first and second heat exchangers may be,
The piezoelectric material comprises a bottom electrode, a piezoelectric material film, a top electrode and a metal bump array which are stacked in sequence from bottom to top.
The stacking manner in the embodiment of the present invention is the same as that of the related art, and will not be described herein.
In one illustrative example, the resonant sensor of the present embodiment further includes a support beam coupled to the support anchor.
The following briefly describes embodiments of the present invention by way of application examples, which are merely provided to illustrate embodiments of the present invention and are not intended to limit the scope of the present invention.
Application example
Fig. 2 is a perspective view of an exemplary resonant type infrared sensor to which the present invention is applied, as shown in fig. 2, the resonant type infrared sensor includes: an infrared absorption film, a resonator oscillator and a supporting anchor; wherein,
The resonant vibrator is rectangular, the supporting anchor is connected with the resonant vibrator through a connecting piece structure, and the rectangular supporting structure is connected at a 90-degree angle to form a square-wave-like structure;
Fig. 3 is a plan view of the resonant type infrared sensor shown in fig. 2, wherein the width direction of the resonator is taken as the horizontal direction, the length direction is taken as the vertical direction, a ray passing through the geometric center of the resonant type infrared sensor is taken as the starting point in the plan view, the number of supporting structures through which the ray passes is the number of times of folding of the supporting anchors, and the number of times of folding of each supporting anchor in fig. 3 is 3; the thickness of the connector structure and the supporting structure is h (not shown in the figure); a is the extension length of the support anchor in the horizontal direction at the resonator extraction end (connecting piece structure), b is the extension length of the support anchor in the horizontal direction at the non-resonator extraction end, e is the width of the support anchor, l is the extension length of the support anchor in the vertical direction, x is the width of the resonator, and y is the length of the resonator; the two support anchors in the figure are symmetrical about the geometric center of the resonance type infrared sensor.
Fig. 4 is a perspective view of another resonance type infrared sensor according to an application example of the present invention, and fig. 5 is a perspective view of yet another resonance type infrared sensor according to an application example of the present invention, as shown in fig. 4 and 5, the number of folds of the support anchors is 4 and 5, respectively;
The application example of the invention assumes that infrared radiation is the only heat source, ignores the absorption of infrared rays by a resonant vibrator and a supporting anchor, ignores the heat dissipation caused by heat convection and heat radiation, assumes that an infrared sensor comprises two supporting anchors, the material forming the supporting anchors is uniform everywhere and has equal heat conductivity coefficients in all directions, and each supporting anchor is equivalent to a rectangular anchor with the same thermal resistance, the resonant vibrator and an infrared absorption film are approximately regarded as an isothermal body, the leading-out end surface of the supporting anchor which is directly connected with the outside is approximately regarded as an isothermal surface, and the temperature difference delta T between the temperature T of the resonant vibrator and the infrared absorption film and the temperature T 0 of the leading-out end surface of the supporting anchor which is directly connected with the outside satisfies the following relational expression:
Wherein Q is heat generated in unit time after the infrared absorption film absorbs infrared rays, A is the cross-sectional area of the support anchor, and the cross-sectional area can be calculated by the following formula: a=eh;
I is the total length of an equivalent rectangular anchor of the support anchor of an embodiment of the present invention, which can be approximated by the following equation: i is approximately equal to a+ (n-1) b+nl;
Lambda is taken as the thermal conductivity of the material comprising the support anchor of the present embodiment. The total thermal resistance R of the folded anchor can be approximated by:
From the above relation, it can be known that when the heat quantity Q generated in unit time after the infrared absorption film absorbs the infrared rays, the cross-sectional area A of the support anchor according to the embodiment of the invention and the thermal conductivity coefficient lambda of the material constituting the support anchor according to the embodiment of the invention are fixed, the temperature difference DeltaT is in direct proportion to the total length I of the equivalent rectangular anchor of the support anchor; the total length I of the equivalent rectangular anchor of the support anchor can be increased by increasing the folding times n, so that the thermal resistance R and the temperature difference delta T are increased, the temperature T of the resonant vibrator and the infrared absorption film can be increased at a certain time at the temperature T 0 of the leading-out end face of the support anchor which is directly connected with the outside, the change of the resonant frequency of the resonant vibrator is increased, and the sensitivity of the sensor is improved. The sensitivity of the sensor can be adjusted in a large range by changing the folding times n, and based on the same working procedure, the mass production of the resonant type infrared sensor with higher sensitivity, lower response speed, lower sensitivity and higher response speed can be realized on the same layout.
To examine the effect of the change in the number of folds n on the maximum Von Mises (Von-Mises) stress of the support anchors, the infrared absorbing film and the electrodes in the resonators were ignored, the thickness of the resonators and the thickness of the support anchors were consistent, the constituent materials were aluminum nitride, and the values of the geometric parameters are shown in table 1.
| Geometric parameters | Numerical value (micron) | Geometric parameters | Numerical value (micron) |
| a | 55 | b | 2.5 |
| e | 5 | l | 210 |
| x | 100 | y | 200 |
| h | 0.8 |
TABLE 1
FIG. 6 is a graph showing the relationship between the number of folds and stress of an application example of the invention, wherein as shown in FIG. 6, the maximum value of the stress of the sensor Von-Mises is obtained by finite element simulation under the condition of considering the dead weight of the sensor, when n is increased from 1 to 7, the total length I of the equivalent rectangular support anchor is increased by nearly 600%, and the maximum stress of the sensor Von-Mises is increased by 71%; in addition, the maximum Von-Mises stress may be further reduced by increasing the width of the support anchors near the maximum point of Von-Mises stress. In summary, the application of the resonant type infrared sensor disclosed by the invention can simultaneously have higher sensitivity and lower maximum Von-Mises stress, and the lower maximum Von-Mises stress can ensure that the resonant type infrared sensor has longer fatigue life.
Fig. 7 is a top view of a further resonant infrared sensor according to an application example of the present invention, as shown in fig. 7, and is similar to the resonant infrared sensor shown in fig. 3 in structure, the resonant infrared sensor support structures in fig. 7 are joined by rounded corners, and stress concentration is effectively suppressed and fatigue life of the resonant infrared sensor is improved by joining the support structures by rounded corners.
Fig. 8 is a top view of still another resonant type infrared sensor according to an application example of the present invention, and as shown in fig. 8, a portion of the support anchors are engaged by using the rectangular support structure shown in fig. 2, and a portion of the support anchors are engaged by using a rectangular shape and a trapezoid shape, and the trapezoid engagement portion can be understood as: the width of the rectangle at the joint position is increased to form a supporting structure with different widths, and the structure can reduce the maximum Von-Mises stress of the region by increasing the width of the anchor of the region with larger Von-Mises stress, thereby enhancing the fatigue resistance of the region.
Fig. 9 is a top view of still another infrared sensor of a resonant type according to an application example of the present invention, as shown in fig. 9, in which the support structure in the support anchor of fig. 9 is a spiral structure, unlike the previously described infrared sensor of a resonant type; in one illustrative example, the centerline of the helical structure in this application example may be a helical polyline.
Fig. 10 is a top view of still another resonant type infrared sensor according to an application example of the present invention, and as shown in fig. 10, a resonator is connected to only one support anchor, and the support anchors are connected to the resonator through four connection structures; according to the embodiment of the invention, under the conditions that the folding anchors are longer and the equivalent rectangular anchors of the folding anchors are the same in total length, compared with a sensor using a plurality of folding anchors, the sensor has higher thermal resistance, and the sensitivity of the sensor can be further improved.
Fig. 11 is a top view of still another resonant type infrared sensor according to an application example of the present invention, as shown in fig. 11, the resonant vibrator and the infrared absorbing film are both circular, one end of the connecting piece structure of the supporting anchor is connected to the resonant vibrator, and the other end is connected to the spiral supporting structure; in one illustrative example, the centerline of the helical support structure in embodiments of the present invention is an archimedes spiral.
Fig. 12 is a perspective view of another resonance type infrared sensor according to an application example of the present invention, and as shown in fig. 12, the support anchors have substantially the same composition as the structure of fig. 2, with the main difference that the thickness of the support structure is set to be different sizes according to stress. In an exemplary embodiment, the invention applies the common first simulation with the folding anchors with consistent thickness everywhere, and reduces the thickness of the anchors in the areas with lower stress level after obtaining the distribution condition of the stress level, thereby improving the thermal resistance of the anchors; in one illustrative example, an application example of the present invention provides a support beam on a support anchor; the setting position can be a region with higher stress level, and the material of the supporting beam can be silicon dioxide; the reduction of the thickness of the region with smaller Von-Mises stress in the support anchor can improve the thermal resistance of the region, and the support beam can improve the stress distribution condition in the support anchor.
Fig. 13 is a perspective view of still another infrared sensor of a resonance type, as shown in fig. 13, of an application example of the present invention, the structure of the infrared sensor being similar to that of fig. 2, except that the support anchor of fig. 13 comprises two layers of a bottom electrode and a piezoelectric material, and the resonator element is composed of the piezoelectric material and interdigital electrodes; the infrared absorption film comprises a resonance oscillator, and consists of the resonance oscillator and a top metal bump array thereof; in an illustrative example, the present application example may form the infrared absorbing film by stacking the following structures in order from bottom to top: interdigital electrodes, piezoelectric materials and metal bump array meta-materials; the application of the processing technology of the invention can be compatible with the manufacturing technology of an integrated circuit, and is beneficial to the integration of the resonance type infrared sensor and a chip circuit.
Fig. 14 is a bottom view of the resonant type infrared sensor shown in fig. 13, which is an application example of the present invention, and as shown in fig. 14, the support anchor includes two layers of a bottom electrode and a piezoelectric material, and the resonator element is composed of the piezoelectric material and interdigital electrodes.
Fig. 15 is a top view of still another infrared sensor of a resonant type, which is an application example of the present invention, as shown in fig. 15, and the support structure in the support anchor of fig. 15 includes a rectangular shape and a circular fan shape, unlike the previously described infrared sensor of a resonant type.
Fig. 16 is a top view of still another infrared sensor of a resonant type, which is an application example of the present invention, as shown in fig. 16, and the support structure in the support anchor in fig. 16 includes trapezoids, rectangles and trapezoids, unlike the previously described infrared sensor of a resonant type.
Those of ordinary skill in the art will appreciate that all or some of the steps, systems, functional modules/units in the apparatus, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between the functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed cooperatively by several physical components. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as known to those skilled in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
Claims (8)
1. A resonant sensor comprising: one or more support anchors connected to the resonator element, the support anchors comprising one or more connector-shaped structures and one or more support structures; wherein,
The connecting piece structure is used for being connected with the side wall of the resonant vibrator;
the connecting piece structure and the supporting structure contained in the supporting anchor are integrally formed, and the formed shape is other than rectangle and trapezoid;
Wherein, first feature point and second feature point in the periphery profile of support anchor are as the characteristic intercept line that the extreme point constitutes, and the characteristic intercept line of constitution includes following characteristics: more than one characteristic contour exists, and the included angle of normal vectors of two characteristic cross lines on the characteristic contour is larger than a preset angle; the first characteristic point is a point which is reached after the displacement of a first preset duration is carried out in a first contour path through a preset speed from a first starting point at a preset moment; the second characteristic point is a point which is reached after the displacement of the first preset duration is carried out in the second contour path through the preset speed from the second starting point at the preset moment; the first contour path is a path from a first starting point along the feature contour to an intermediate point of the feature contour; the second contour path is a path from the second starting point to a middle point of the characteristic contour along the characteristic contour; on each feature profile, the first starting point and the second starting point are the end points of the feature profile; the characteristic outline is as follows: removing contour lines of connecting positions of any connecting piece structure and the side wall of the resonator on the peripheral contour of the top view of the supporting anchor, and then removing the residual peripheral contour; the first preset time length is longer than zero and shorter than the second preset time length, and the second preset time length is the time length from the first starting point to the middle point of the characteristic profile after the first profile is shifted by the preset speed in the first profile path.
2. The resonant sensor of claim 1, wherein the support structure comprises one or a combination of any of the following shapes:
Rectangular, trapezoidal, parallelogram, trapezoid, spiral structure, circular fan ring and elliptical fan ring.
3. The resonant sensor of claim 1, wherein the connector structure comprises one or more of the following shapes:
rectangular, trapezoidal, parallelogram, trapezoid, circular sector ring, and elliptical sector ring.
4. A resonant sensor according to any one of claims 1 to 3, wherein the normal vector comprises: projection of the velocity sum vector on any line perpendicular to the feature intercept;
The speed sum vector is a sum vector of the speed vector of each first characteristic point and the speed vector of each second characteristic point in the first preset duration; the velocity sum vector is not parallel to the reference vector; the reference vector includes: any non-zero vector parallel to the feature cross-section; the normal vector is a vector when the velocity vector is not parallel to the reference vector.
5. A resonant sensor according to any one of claims 1 to 3, wherein the predetermined angle is 30 °.
6. A resonant sensor according to any one of claims 1 to 3,
The lengths of all the characteristic sections are smaller than or equal to the reference length of a first preset multiple;
The length of at least a preset percentage of the characteristic section lines in all the characteristic section lines is smaller than or equal to the reference length of a second preset multiple;
Wherein the reference length is equal to an average of all of the characteristic intercept lengths.
7. The resonant sensor of claim 6, wherein the first predetermined multiple is equal to 400 times.
8. The resonant sensor of claim 6, wherein the predetermined percentage is equal to 50% and the second predetermined multiple is equal to 1.9.
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| CN101439841A (en) * | 2008-12-25 | 2009-05-27 | 中国传媒大学 | Non-refrigeration infrared image sensor chip and preparation thereof |
| CN103708406A (en) * | 2013-12-12 | 2014-04-09 | 中国计量学院 | Resonant type infrared detector structure capable of isolating packaging stress and manufacturing method thereof |
| WO2014075407A1 (en) * | 2012-11-19 | 2014-05-22 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN105988090A (en) * | 2015-01-30 | 2016-10-05 | 中国科学院上海微系统与信息技术研究所 | Micro-machine magnetic field senor and application thereof |
| CN112710402A (en) * | 2020-12-22 | 2021-04-27 | 武汉大学 | Resonant thermal infrared sensor and preparation method thereof |
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|---|---|---|---|---|
| CN101439841A (en) * | 2008-12-25 | 2009-05-27 | 中国传媒大学 | Non-refrigeration infrared image sensor chip and preparation thereof |
| WO2014075407A1 (en) * | 2012-11-19 | 2014-05-22 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN103708406A (en) * | 2013-12-12 | 2014-04-09 | 中国计量学院 | Resonant type infrared detector structure capable of isolating packaging stress and manufacturing method thereof |
| CN105988090A (en) * | 2015-01-30 | 2016-10-05 | 中国科学院上海微系统与信息技术研究所 | Micro-machine magnetic field senor and application thereof |
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