CN101063630A - Infrared detector structure based on micro-bridge resonator and manufacturing method - Google Patents
Infrared detector structure based on micro-bridge resonator and manufacturing method Download PDFInfo
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- CN101063630A CN101063630A CN 200710069043 CN200710069043A CN101063630A CN 101063630 A CN101063630 A CN 101063630A CN 200710069043 CN200710069043 CN 200710069043 CN 200710069043 A CN200710069043 A CN 200710069043A CN 101063630 A CN101063630 A CN 101063630A
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Abstract
This invention discloses one infrared detector structure and process method based on micro mechanic bridge resonance device, wherein the detector is composed of bridge resonance chip and cover board through vacuum sealing technique or gas sealing technique; the incidence infrared line is to micro mechanic bridge surface through infrared incidence window to lead the bridge temperature rise and to add axis stress force and to lower resonance frequency to reflect incidence infrared strength.
Description
Technical field
The present invention relates to the structure and the manufacture method of infrared eye, particularly a kind of structure and method for making of the infrared eye based on micromechanics bridge type resonator belong to microelectromechanical systems (MEMS) field.
Background technology
Infrared eye is meant and can produces the photoelectric sensor of response to infrared radiation.Be applied to military field the earliest, for example based on the supervision in ground, aerial and space and sighting system, weapon night sights, aircraft navigation control loop, night fire control system etc.The application of infrared eye has expanded to the more wide civil area that comprises non-contact temperature measuring, gas analysis, infrared imaging etc. at present.
Divide according to principle of work, infrared eye can be divided into the photon detector of refrigeration mode and the thermal detector two big classes of non-refrigeration.
The basic functional principle of photon detector is under ultrared irradiation, produces charge carrier (electronics and hole) in the semiconductor material, utilizes detector that the electric charge that produces is collected and processing and amplifying then.Photon detector has good, the advantages such as the response time short, the noise equivalent temperature difference is low, sensitivity height of detection selectivity to wavelength, deeply is applied to military fields such as Aero-Space, missile homing, infrared night vision.But for dark current and the noise that suppresses detector, need expensive cryogenic refrigerator, make manufacturing cost higher, the complete machine mission life is short simultaneously, and volume, quality, power consumption are all bigger than normal, only are applicable to military field basically.
The non-refrigeration thermal infrared detector that absorbs the thermal effect of infrared radiation generation based on thermo-sensitive material can work in room temperature, and volume is little, and is in light weight, low in energy consumption, be easy to carry, and reliable operation, operation and maintenance is easy, and the cost performance height is with a wide range of applications.Room temperature infrared detector has several working ways, is three types of bolometers, pyroelectricity, thermoelectric pile but use maximum at present
Bolometer be the most ancient also be the most frequently used infrared eye.Its ultimate principle is a thermistor effect of utilizing detecting material its resistance value when temperature variation with sensitive characteristic to change.During detector work, the thermistor two ends add fixing bias voltage, and the electric current variation that the infrared radiation that receives makes thermistor cell resistance value change and produced is read by sensing circuit (ROIC).At present after deliberation the bolometer of making based on various sensitive materials such as vanadium oxide (VOx), polysilicon, amorphous silicon, poly-SiGe, metal material and high temperature superconducting materia (YBaCuO), and have based on the thermal imaging system of VOx bolometer and sell.The responsiveness of bolometer is than thermoelectric pile type height, and manufacture craft is simpler than thermoelectric type, need not chopper during work.Its shortcoming is the bias pulse voltage accuracy of (1) bolometer probe unit to being applied, and has relatively high expectations, and power consumption is also bigger in addition.Along with the array elements number increases, it is more outstanding that this problem just seems; (2) the bigger noise bandwidth of bolometer array has finally been offset the partial response gain.For the bolometer focal plane arrays (FPA), with the increase of array element number, need to improve corresponding response levels and thermal resistance coefficient value, to offset the increase of noise bandwidth.
Infrared thermopile detector is based on Seebeck effect (being thermoelectric effect) and makes.The focus of research is the micromechanics infrared thermopile detector at present.Compare with general infrared eye, the advantage of the infrared thermopile detector of micromechanics is: (1) has the spectral response of non-constant width; (2) with the IC standard process compatible, with low cost and suitable batch process.The infrared thermopile detector shortcoming is that sensitivity is low, the thermal inertia quality is big and response speed is slow.
Pyroelectric effect is meant that the spontaneous polarization of crystal when the temperature of pyroelectric crystal changes has little time to be neutralized, and produces the effect of alternating electric field with the temperature cycle variation under certain frequency.Pyroelectric infrared detector can be divided into hybrid and one chip two big classes.Common used material is barium strontium titanate (BST), lead zirconate titanate (PZT) ferroelectric ceramics and PVDF/TrFE polymkeric substance etc.Although pyroelectric infrared detector has the potentiality that can make noise equivalent temperature difference (NETD) reach 1mK in theory, but have following shortcoming: (1) is incompatible with IC technology, be subjected to the restriction of the high-temperature capability of sensing circuit (ROIC), be difficult to improve the dielectric temperature coefficient value (TCD value) of electric heating film.(2) pyroelectric infrared detector does not have DC response, must use chopper to change incident radiation with suitable frequency period ground, just can obtain and the corresponding signal of infrared radiation.(2) many ferroelectrics pyroelectric properties reduce along with thickness and reduce.
In sum, photon detector is highly sensitive, and response speed is fast, but generally need work at low temperatures (especially for the mid and far infrared wave band), complex structure has limited application.Though and thermal detector can be realized working and room temperature, its detectivity and responsiveness are low, response speed is slow, make its application be subjected to certain restriction.Therefore pressing for development can be at the high-performance non-refrigerated infrared detector of working and room temperature.
Summary of the invention
The objective of the invention is to invent a kind of based on the high detectivity of micromechanics bridge type resonator and the non-refrigerated infrared detector of responsiveness.
For achieving the above object, the technical solution adopted in the present invention is: infrared eye mainly is made up of bridge resonator chip 1 and cover plate 2.On bridge resonator chip 1, be manufactured with micromechanics bridge (two-end fixed beam) 3 in conjunction with corrosion/lithographic technique by photoetching technique.On micromechanics bridge 3, be manufactured with resistance, electrode or coil etc. and form vibrator 4, the vibration of excitation micromechanics bridge.On micromechanics bridge 3, also be manufactured with formation vibro-pickups 5 (being detecting element) such as voltage dependent resistor (VDR), electric capacity or piezoelectric membrane, detect the vibrational state (as resonance frequency) of micromechanics bridge 3.In some cases, vibrator 4 and vibro-pickup 5 also may be outer members.Under optical excitation and pick-up pattern, vibrator 4 is outside laser diode, laser instrument etc.; Vibro-pickup 5 is optical detection devices such as photodiode.Micromechanics bridge 3, vibrator 4 and vibro-pickup 5 are formed the bridge type resonant element.Resonator chip 1 and cover plate 2 are packaged together by level Hermetic Package or vacuum sealing technology.
Non-refrigerated infrared detector principle of work based on micromechanics bridge type resonator involved in the present invention: incident infrared is incident on by infrared transmission window 7 and is micromechanics bridge 3 surfaces, cause that micromechanics bridge 3 temperature raise, axial stress increases, resonance frequency descends, by measuring the power that change of resonance frequency can reflect incident infrared.
Non-refrigerated infrared detector based on micromechanics bridge type resonator involved in the present invention can adopt following basic technology to make:
1) original material is silicon chip (common silicon chip or a soi wafer), thermal oxide;
2) front utilizes various thin-film techniques to make bilayer or multilayer film, in the shape of the positive photoetching micromechanics of silicon chip bridge 3, corrodes the compound film system of above-mentioned bilayer or multilayer film;
3) on micromechanics bridge 3, make vibrator 4 and vibro-pickup 5, form the bridge type resonator, make metal internal lead 6;
4) positive photoetching corrosion window, anisotropic dry or wet etching discharge micromechanics bridge 3;
5) on micromechanics bridge 3, make the infrared absorption film as required;
6) make sealing ring 8, bridge resonator chip 1 and cover plate 2 (if static excitation/capacitor vibration pick-up then should be made top electrode at the correspondence position of cover plate 2 before bonding) are carried out level Hermetic Package or Vacuum Package by various bonding techniques (as electrostatic bonding) or Sealing Technology (as the glass solder Sealing Technology);
7) scribing, welding outer lead 9.
In the above-mentioned manufacture craft, micromechanics bridge 3 and infrared transmission window 7 relative one sides should make to the infrared ray absorbing performance preferably material to absorb infrared ray, so that be translated into heat energy.This absorbing material can be materials such as gold is black, silver is black, platinum black, carbon nano-tube.Can itself be exactly the material of forming micromechanics bridge 3 also, as silicon nitride film.
The micromechanics bridge 3 of non-refrigerated infrared detector based on micromechanics bridge type resonator involved in the present invention can adopt following exciting mode: electric magnetization, static excitation, piezoelectric excitation, electric heating excitation, photothermal excitation etc.Its resonance frequency can detect in the following ways: piezoelectricity pick-up, capacitor vibration pick-up, electromagnetism pick-up, light signal pick-up and voltage dependent resistor (VDR) pick-up etc.Above-mentioned vibrator 4 adopts different forms when adopting different incentive program.To electric magnetization, vibrator 4 is the coils that are produced on the micromechanics bridge 3; To static excitation, vibrator 4 is the electrodes that are produced on the micromechanics bridge 3; To piezoelectric excitation, vibrator 4 is the piezo actuators that are produced on the bridge; To the electric heating excitation, vibrator 4 is the resistance that is produced on the micromechanics bridge 3; To photothermal excitation, need not be produced on and make vibrator 4 on the device, but require the plane of incidence of bridge that incident light is had high reflectivity, its vibrator 4 is outside alternation light sources.Equally, adopt the different different forms of above-mentioned vibro-pickup 5 employings in (pick-up) scheme that detect.To the piezoelectricity pick-up, vibro-pickup 5 should be piezoelectric membrane; To capacitor vibration pick-up, vibro-pickup 5 should be electrode; To the electromagnetism pick-up, vibro-pickup 5 should be the pick-up coil; To the light signal pick-up, vibro-pickup 5 should be outside photovalve, and to the voltage dependent resistor (VDR) pick-up, vibro-pickup 5 should be the voltage dependent resistor (VDR) of making by thin-film technique or diffusion, ion implantation technology.
The both adoptable two-end fixed beam of micromechanics bridge 3 based in the non-refrigerated infrared detector of micromechanics bridge type resonator (bridge) involved in the present invention also can adopt three girder construction resonators.In the three girder construction resonators, the width of the beam on both sides be intermediate beam width 1/2nd, the beam that is positioned at both sides is opposite with the intermediate beam vibration phase.
Non-refrigerated infrared detector based on micromechanics bridge type resonator involved in the present invention has the following advantages: have high detectivity and responsiveness.The temperature coefficient of its resonance frequency is greater than the temperature-coefficient of electrical resistance of bolometer commonly used, and the relative variation of the resonance frequency that the unit incident power causes will be better than 5ppm/nW, and detection limit reaches 10
-6K.
Another advantage of non-refrigerated infrared detector based on micromechanics bridge type resonator involved in the present invention is that the thermal infrared detector output quantity of this micromechanics bridge resonator is a resonance frequency, is not subjected to the influence of circuit noise, and temperature measurement accuracy and resolution are very high.Therefore high sensitivity and the low noise of this infrared eye will make its noise equivalent temperature value (NEDT) improve a lot with respect to existing thermal detector.And output quantities such as bolometer, pyroelectric detector, micro-cantilever detector are voltage or electric current, because output signal is very faint, signal to noise ratio (S/N ratio) is very low, makes that the NEDT value is bigger.
Another advantage of non-refrigerated infrared detector based on micromechanics bridge type resonator involved in the present invention is that manufacture craft and IC manufacture craft are compatible fully, is easy to realize the array and the system integration, and it is low to produce cost in enormous quantities, is suitable for long-distance transmissions; Low in energy consumption, long-time stability are good, and antijamming capability is strong.
Description of drawings
Fig. 1 be one of technical scheme of infrared eye based on micromechanics bridge type resonator involved in the present invention detect the non-refrigerated infrared detector structural representation of bridge type resonator based on electric heating excitation/voltage dependent resistor (VDR).Wherein Fig. 1 (a) middle infrared (Mid-IR) transmission window 7 is on bridge resonator chip 1; Fig. 1 (b) middle infrared (Mid-IR) transmission window 7 is on cover plate 2;
Fig. 2 is another technical scheme-based on the non-refrigerated infrared detector structural representation of the bridge type resonator of static excitation/capacitance detecting of infrared eye based on micromechanics bridge type resonator involved in the present invention.
Fig. 3 be one of infrared eye technical scheme based on micromechanics bridge type resonator involved in the present invention detect the process chart of the non-refrigerated infrared detector manufacture method of bridge type resonator based on electric heating excitation/voltage dependent resistor (VDR).
In the accompanying drawing:
1-bridge resonator chip 2-cover plate 3-bridge resonator
4-vibrator 5-vibro-pickup 6-internal lead
7-infrared transmission window 8-sealing ring 9-outer lead
Embodiment
The present invention will be further described below in conjunction with drawings and Examples, but be not limited to this embodiment.
Embodiment:
Utilize technical scheme of the present invention to make a kind of non-refrigerated infrared detector that detects micromechanics bridge type resonator based on electric heating excitation/pressure drag.Its manufacture craft flow process is as follows:
1) original silicon chip adopts N type, (100) face silicon chip, resistivity 1～10 Ω .cm.Thermal oxide, oxidated layer thickness 0.5 μ m.(seeing accompanying drawing 3 (a)).
2) low pressure chemical deposit (LPCVD) technology deposition silicon nitride film, thickness 0.2-0.3 μ m.Positive photoetching micromechanics bridge 3.(seeing accompanying drawing 3 (b)).
3) positive deposit polysilicon is made polysilicon resistance, forms exciting resistance 4 and pick-up resistance 5.The sputtered aluminum film, photoetching aluminium line, alloying forms internal lead 6.(seeing accompanying drawing 3 (c)).
4) positive deposit silicon dioxide layer of protection, positive photoetching corrosion window, 25% Tetramethylammonium hydroxide anisotropic etch silicon discharges bridge resonator 3, and forms infrared transmission window 7.The dry etching silicon dioxide layer of protection.(seeing accompanying drawing 3 (d)).
5) on bridge resonator chip 1, make sealing ring 8, adopt glass capsulation technology Vacuum Package to be in the same place bridge resonator 1 and cover plate 2.(seeing accompanying drawing 3 (e)).
6) scribing, welding outer lead 9.(seeing accompanying drawing 3 (f)).
Claims (6)
1, a kind of infrared eye based on micro-bridge resonator is characterized in that: infrared eye is made up of bridge (two-end fixed beam) resonator chip (1) and cover plate (2).
2, the infrared eye based on micro-bridge resonator according to claim 1 is characterised in that: go up by the optical semiconductor lithography at bridge resonator chip (1) and be manufactured with micromechanics bridge (3) in conjunction with corrosion or lithographic technique.On micromechanics bridge (3), be manufactured with resistance, electrode or coil etc. and form vibrator (4), excitation micromechanics bridge (3) vibration.On micromechanics bridge (3), also be manufactured with voltage dependent resistor (VDR), capacitor plate or piezoelectric membrane etc. and form vibro-pickup (5), detect the vibrational state (as resonance frequency) of micromechanics bridge (3).In some cases, vibrator (4) and vibro-pickup (5) also may be outer members.Under optical excitation and pick-up pattern, vibrator (4) is laser diode, laser instrument etc.; Vibro-pickup (5) is optical detection devices such as photodiode.Bridge resonator chip (1) and cover plate (2) are by level Hermetic Package or vacuum sealing technology encapsulation.On bridge resonator chip (1) or cover plate (2), be manufactured with infrared transmission window (7).If infrared transmission window (7) is on cover plate (2), then incident infrared is radiated at micromechanics bridge (3) positive (making the one side of vibrators (4) such as excitation resistance or electrode).Otherwise, if infrared transmission window (7) on bridge resonator chip (1), then incident infrared is radiated at micromechanics bridge (3) back side.The one side that micromechanics bridge (3) is relative with infrared transmission window (7) should make to the infrared ray absorbing performance preferably film to absorb infrared ray, so that be translated into heat energy.This infrared absorption membrane also can be formed the material of micromechanics bridge (3) exactly, as silicon nitride film.
3 infrared eyes based on micro-bridge resonator according to claim 1 are characterised in that: incident infrared is incident on micromechanics bridge (3) surface by infrared transmission window (7), cause that micromechanics bridge (3) temperature raises, axial stress increases, resonance frequency descends, by measuring the power that change of resonance frequency can reflect incident infrared.
4, the infrared eye based on micro-bridge resonator according to claim 1 is characterized in that: micromechanics bridge (3) can adopt following exciting mode: electric magnetization, static excitation, piezoelectric excitation, electric heating excitation, photothermal excitation etc.Its resonance frequency can detect in the following ways: piezoelectricity pick-up, capacitor vibration pick-up, electromagnetism pick-up, light signal pick-up and voltage dependent resistor (VDR) pick-up etc.
5, the infrared eye based on micro-bridge resonator according to claim 1 is characterized in that: the both adoptable two-end fixed beam of micromechanics bridge (3) (bridge), also can adopt three girder construction bridge resonators.The width of two side bars of three girder construction resonators is 1/2nd of intermediate beam width, and the beam on both sides is opposite with the intermediate beam vibration phase.
6. the infrared eye based on micro-bridge resonator according to claim 1 is characterized in that: adopt following processing step to make:
1) original material is silicon chip (common silicon chip or a soi wafer), thermal oxide;
2) front utilizes various thin-film techniques to make bilayer or multilayer film, in the shape of the positive photoetching micromechanics bridge of silicon chip (3), corrodes the compound film system of above-mentioned bilayer or multilayer film;
3) go up making vibrator (4) and vibro-pickup (5) at micromechanics bridge (3), make internal lead (6), form the micromechanics bridge resonator;
4) positive photoetching corrosion window, anisotropic dry or wet etching discharge micromechanics bridge (3);
5) go up making infrared absorption film at micromechanics bridge (3) as required;
6) make sealing ring, bridge resonator chip (1) and cover plate (2) (if static excitation/capacitor vibration pick-up then should be made top electrode at the correspondence position of cover plate before bonding) are carried out level Hermetic Package or Vacuum Package by various bonding techniques (as electrostatic bonding) or Sealing Technology (as the glass solder Sealing Technology);
7) scribing, welding outer lead (9).
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| CN101872797A (en) * | 2010-04-13 | 2010-10-27 | 中国计量学院 | Structure of novel infrared detector based on micro-bridge resonator and manufacturing method thereof |
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