CN109459143A - Infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic - Google Patents
Infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic Download PDFInfo
- Publication number
- CN109459143A CN109459143A CN201811340646.9A CN201811340646A CN109459143A CN 109459143 A CN109459143 A CN 109459143A CN 201811340646 A CN201811340646 A CN 201811340646A CN 109459143 A CN109459143 A CN 109459143A
- Authority
- CN
- China
- Prior art keywords
- electrode
- piezoelectric membrane
- infrared sensor
- phasmon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000001228 spectrum Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000001965 increasing effect Effects 0.000 abstract description 5
- 238000010923 batch production Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000004566 IR spectroscopy Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 28
- 238000010586 diagram Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 238000005057 refrigeration Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0265—Handheld, portable
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic is related to infrared electronic technology field, solve the problems, such as that absorptivity is lower in the prior art, including sequentially connected reading IC substrate, piezoelectric membrane and surface phasmon from bottom to up.Non-refrigerating infrared sensor of the present invention is by integrating surface phasmon on piezoelectric membrane surface, realize that the enhancing to infrared spectroscopy absorbs using surface phasmon, the energy of absorption acts on piezoelectric membrane, the absorptivity of non-refrigerating infrared sensor is increased to 80% or more from 20%, while increasing non-refrigerating infrared sensor to the selectivity for entering radio-frequency spectrum；Be integrated in and read on IC substrate by piezoelectric membrane and surface phasmon, can Integrated manufacture, batch production, and it is low in cost；The advantages of existing tradition uncooled ir sensing, while response quickly, sensing sensitivity are high.
Description
Technical field
The present invention relates to infrared electronic technology fields, and in particular to is based on phasmon and piezoelectric membrane temperature frequency characteristic
Infrared sensor.
Background technique
Non-refrigeration type infrared sensor is also temperature sensor, can work at room temperature.Non-refrigerating infrared sensor
Usually heat sensor, i.e., by sensing the fuel factor of infra-red radiation come work.Non-refrigerating infrared sensor has small in size, again
The advantages that amount is light, the service life is long, at low cost, low in energy consumption, therefore non-refrigerating infrared sensor is in necks such as military affairs, security protection, medical treatment detections
Domain has been more and more widely used.
In recent years, with the development of micro-nano sensing technology, the application of piezoelectric membrane also extends to non-refrigerating infrared sensor
Field.On the one hand, piezoelectric membrane usually has miniature size, and external interference resistance is stronger；On the other hand, piezoelectric membrane is logical
Often work has very high quality factor in harmonic simulation, so device shows very high sensitivity；In terms of two above
The non-refrigerating infrared sensor based on piezoelectric membrane is promoted to show outstanding signal-to-noise ratio index.In addition, piezoelectric membrane is using frequency
Rate reading circuit mode, this kind of mode can effectively inhibit flicker noise (1/f noise).
However the sensing surface of piezoelectric membrane is lower to the absorptivity of infra-red radiation, generally less than 20%, and to entering radio frequency
Spectrum is without selectivity.It is lower so as to cause absorptivity of the non-refrigerating infrared sensor based on piezoelectric membrane to infra-red radiation.Cause
This, the Infrared spectra adsorption rate of the non-refrigerating infrared sensor based on piezoelectric membrane is low and not selective always to radio-frequency spectrum is entered
It is the problem for being difficult to break through.
Summary of the invention
To solve the above-mentioned problems, the present invention provides the infrared biography based on phasmon and piezoelectric membrane temperature frequency characteristic
Sensor.
Used technical solution is as follows in order to solve the technical problem by the present invention:
Infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic, including piezoelectric membrane, the infrared biography
Sensor further includes the reading IC substrate for connecting piezoelectric membrane and the surface phasmon on piezoelectric membrane upper surface.
The beneficial effects of the present invention are:
1, it by integrating the structure of surface phasmon on piezoelectric membrane surface, is realized using surface phasmon to infrared
The enhancing of spectrum absorbs, and the energy of absorption acts on piezoelectric membrane, overcomes the sensing surface of piezoelectric membrane to infra-red radiation
The lower problem of absorptivity, the absorptivity of non-refrigerating infrared sensor is increased to 80% or more.
2, non-refrigerating infrared sensor is increased to the selectivity for entering radio-frequency spectrum by using surface phasmon.
3, non-refrigerating infrared sensor of the invention is membrane structure, and the uncooled ir compared to previous micro-bridge structure passes
Sensor has a clear superiority in terms of anti-seismic performance and pixel.
4, piezoelectric membrane and surface phasmon are integrated in and read on IC substrate by the present invention, therefore have integrated
The advantages such as manufacture, batch production, low in cost.
5, the non-system of the existing tradition of the infrared sensor of the invention based on phasmon and piezoelectric membrane temperature frequency characteristic
The advantages of cold infrared sensing low cost, miniaturization, high stability, long-life, also have both refrigeration mode infrared sensor quick response,
The advantages of high sensing sensitivity.
Detailed description of the invention
Fig. 1 is the three dimensional structure diagram of non-refrigerating infrared sensor of the invention.
Fig. 2 is the structural schematic diagram of the surface phasmon of non-refrigerating infrared sensor of the invention.
Fig. 3 is the structural schematic diagram of the piezoelectric membrane of non-refrigerating infrared sensor of the invention.
Fig. 4 is the corresponding state diagram of preparation process S1 of non-refrigerating infrared sensor of the invention.
Fig. 5 is the corresponding state diagram of preparation process S2 of non-refrigerating infrared sensor of the invention.
Fig. 6 is the corresponding state diagram of preparation process S3 of non-refrigerating infrared sensor of the invention.
Fig. 7 is the corresponding state diagram of preparation process S4 of non-refrigerating infrared sensor of the invention.
Fig. 8 is the corresponding state diagram of preparation process S5 of non-refrigerating infrared sensor of the invention.
Fig. 9 is the corresponding state diagram of preparation process S6 of non-refrigerating infrared sensor of the invention.
Figure 10 is the corresponding state diagram of preparation process S7 of non-refrigerating infrared sensor of the invention.
Figure 11 is the corresponding state diagram of preparation process S8 of non-refrigerating infrared sensor of the invention.
Figure 12 is the corresponding state diagram of preparation process S9 of non-refrigerating infrared sensor of the invention.
Figure 13 is the corresponding state diagram of preparation process S10 of non-refrigerating infrared sensor of the invention.
Figure 14 is the corresponding state diagram of preparation process S11 of non-refrigerating infrared sensor of the invention.
Figure 15 is the corresponding state diagram of preparation process S12 of non-refrigerating infrared sensor of the invention.
Figure 16 is the corresponding state diagram of preparation process S13 of non-refrigerating infrared sensor of the invention.
Figure 17 is the corresponding state diagram of preparation process S14 of non-refrigerating infrared sensor of the invention.
Figure 18 is the corresponding state diagram of preparation process S15 of non-refrigerating infrared sensor of the invention.
In figure: 1, reading IC substrate, 1-1, the first underlayer electrode, 1-2, the second underlayer electrode, 1-3, substrate, 2,
Piezoelectric membrane, 2-1, top electrode, 2-.2, piezoelectric layer, 2-3, hearth electrode, 2-4, first electrode, 2-5, second electrode, 2-6, silicon substrate
Bottom, 2-7, right through hole electrode, 2-8, left through hole electrode, 2-9, cavity, 2-17, right through-hole, 2-18, Zuo Tongkong, 2-19, groove,
2-29, sacrificial layer, 3, surface phasmon, 3-1, metal array layer, 3-2, dielectric layer, 3-3, metallic reflector, 4, coaming plate, 5,
Infrared window.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
A kind of non-refrigerating infrared sensor based on piezoelectric membrane 2, as shown in Figure 1, include read IC substrate 1,
Piezoelectric membrane 2 and surface phasmon 3.IC substrate 1, piezoelectric membrane 2 and surface phasmon 3 is read to be sequentially connected.
It reads IC substrate 1 and is located at the bottom, piezoelectric membrane 2 is located at middle layer, and surface phasmon 3 is located at top layer, surface
Phasmon 3 is located on 2 upper surface of piezoelectric membrane.Reading IC substrate 1, piezoelectric membrane 2 and surface phasmon 3 can be straight
It connects in succession, it can also be to pass through the connection of the first articulamentum between piezoelectric membrane 2 and surface phasmon 3, read IC substrate 1
It is connected between piezoelectric membrane 2 by the second articulamentum.
A kind of non-refrigerating infrared sensor based on piezoelectric membrane 2 of the present invention provides a kind of based on surface phasmon 3
With the non-refrigerating infrared sensor structure of 2 technology of piezoelectric membrane.Its sensor mechanism is to realize using surface phasmon 3 to red
The enhancing of external spectrum absorbs, and the energy of absorption acts on piezoelectric membrane 2, by detecting the variation of 2 electrical parameter of piezoelectric membrane,
Derive amount of infrared radiation.The present invention overcomes piezoelectricity by the structure in the integrated surface phasmon 3 in 2 surface of piezoelectric membrane
The sensing surface of film 2 problem lower to the absorptivity of infra-red radiation, the absorptivity of non-refrigerating infrared sensor is increased to
80% or more.Meanwhile not having by overcoming piezoelectric membrane 2 in the integrated surface phasmon 3 in 2 surface of piezoelectric membrane to radio-frequency spectrum is entered
Selective problem increases non-refrigerating infrared sensor to the selectivity for entering radio-frequency spectrum.Uncooled ir provided by the invention
Sensor is membrane structure, compared to previous micro-bridge structure non-refrigerating infrared sensor in anti-seismic performance and pixel consistency etc.
Aspect has a clear superiority.It is integrated in and is read on IC substrate 1 by piezoelectric membrane 2 and surface phasmon 3, therefore had
There are the advantages such as Integrated manufacture, batch production, low in cost.The existing traditional uncooled ir sensing of the non-refrigerating infrared sensor is low
The advantages of cost, miniaturization, high stability, long-life, also has both refrigeration mode infrared sensor quick response, high sensing sensitivity
The advantages of.
Infrared sensor of the invention further includes coaming plate 4 and infrared window 5.As shown in figure 18, the setting of coaming plate 4 is reading collection
At in circuitry substrate 1, such as it is adhesive in by sealing and reads 1 upper surface of IC substrate.Infrared window 5 is arranged in coaming plate 4
On, and infrared window 5 is located at the surface of surface phasmon 3, and the infrared light infrared window 5 is allowed to be radiated at surface
The surface of phasmon 3.It reads IC substrate 1, coaming plate 4 and infrared window 5 and collectively forms seal chamber, according to operating condition
Demand, seal chamber is that piezoelectric membrane 2 and surface phasmon 3 provide vacuum environment.
Above-mentioned reading IC substrate 1 includes substrate 1-3, is arranged on substrate 1-3 and connects two linings of substrate 1-3
Hearth electrode is referred to as the first underlayer electrode 1-1 and the second underlayer electrode 1-2, as shown in figure 16.Read IC substrate 1
Function be read piezoelectric membrane 2 electrical signal.The work of IC substrate 1 is typically read out in radio-frequency range, more specifically,
Read the work of IC substrate 1 wave band (about 1GHz~3GHz) near the resonance frequency of piezoelectric membrane 2.
Surface phasmon 3 by being followed successively by metallic reflector 3-3, dielectric layer 3-2 and metal array layer 3-1 group from top to bottom
At as shown in Fig. 2, dielectric layer 3-2 is located on the upper surface of metallic reflector 3-3, metal array layer 3-1 is located at dielectric layer 3-2
Upper surface on.The material of metal array layer 3-1 generallys use Au, Ag, Al etc., but is not limited to these three metals；Metal array
Common semiconductor technology and electron beam lithography can be used in layer 3-1 manufacture craft.The material of dielectric layer 3-2 generally use Ge,
MgF2、SiO2Or AlN etc., but it is not limited to these materials.
Piezoelectric membrane 2 includes silicon base 2-6, cavity 2-9, hearth electrode 2-3, piezoelectric layer 2-2, top electrode 2-1, left through-hole electricity
Pole 2-8, right through hole electrode 2-7, first electrode 2-4 and second electrode 2-5, the specific structure is shown in FIG. 3.It is set on silicon base 2-6
There are left through-hole 2-18 and right through-hole 2-17, left through hole electrode 2-8 is located in left through-hole 2-18, left through hole electrode 2-8 filling is left logical
Hole 2-18, right through hole electrode 2-7 are located in right through-hole 2-17, right through hole electrode 2-7 fills right through-hole 2-17.First electrode 2-4
The lower surface of silicon base 2-6 is arranged at second electrode 2-5, first electrode 2-4 connects the lower end of left through hole electrode 2-8, can
Think that first electrode 2-4 and left through hole electrode 2-8 is integrally formed, second electrode 2-5 connects the lower end of right through hole electrode 2-7, can
Think that second electrode 2-5 and right through hole electrode 2-7 is integrally formed.First electrode 2-4 connection reads the first of IC substrate 1
Underlayer electrode 1-1, the second underlayer electrode 1-2, left through hole electrode 2-8 that second electrode 2-5 connection reads IC substrate 1 are logical
It crosses first electrode 2-4 connection and reads IC substrate 1, right through hole electrode 2-7 reads integrated electricity by second electrode 2-5 connection
Road substrate 1.Cavity 2-9 is located at the upper surface of silicon base 2-6, and hearth electrode 2-3 is arranged in the upper surface of cavity 2-9 and silicon base 2-6,
Cavity 2-9 is between hearth electrode 2-3 and silicon base 2-6, and hearth electrode 2-3 covers cavity 2-9, i.e., cavity 2-9 is in silicon base 2-6
On projected area be less than projected area of the hearth electrode 2-3 on silicon base 2-6, that is, hearth electrode 2-3 and silicon base 2-6
Intermediate space is referred to as cavity 2-9, and cavity 2-9 effect is to realize the reflection of sound wave, and mechanical energy is limited in piezoelectric membrane 2
Portion.Piezoelectric layer 2-2 is arranged on the upper surface hearth electrode 2-3, and top electrode 2-1 is arranged on the upper surface piezoelectric layer 2-2, top electrode 2-
1 connect with the metallic reflector 3-3 of surface phasmon 3, and metallic reflector 3-3 is arranged on the upper surface of top electrode 2-1, bottom
Electrode 2-3 connects the upper end of left through hole electrode 2-8, and top electrode 2-1 connects the upper end of right through hole electrode 2-7.Preferably, piezoelectricity
Layer 2-2 is greater than projected area of the cavity 2-9 on silicon base 2-6 in the projected area on silicon base 2-6.
Above-mentioned hearth electrode 2-3 and top electrode 2-1 generallys use the materials such as Mo, W, Al, Pt or Ni.Piezoelectric layer 2-2 is logical
Frequently with AlN, ZnO, LiNbO3Or the materials such as quartz.Right through hole electrode 2-7, left through hole electrode 2-8, first electrode 2-4 and
Two electrode 2-5 generally use electroplating technology production, and optional material includes Au, Cu or Ni, but is not limited to these types of material.
A kind of non-refrigerating infrared sensor based on piezoelectric membrane 2 according to the present invention provides a kind of based on piezoelectric membrane 2
Non-refrigerating infrared sensor preparation method.Specific step is as follows:
S1, silicon base 2-6 is obtained
As shown in figure 4, obtaining silicon base 2-6；Silicon base 2-6, which is that common high resistant is double in semicon industry, throws silicon wafer.
S2, left through-hole 2-18, right through-hole 2-17 and groove 2-19 are prepared on silicon base 2-6
As shown in figure 5, it is (recessed in S12 to prepare left through-hole 2-18, right through-hole 2-17 and groove 2-19 on silicon base 2-6
Slot 2-19 cooperates hearth electrode 2-3 to become cavity 2-9).The preparation process of left through-hole 2-18 and right through-hole 2-17 generally use deep silicon
Ion reaction etching (DRIE).The preparation process of groove 2-19 can use dry or wet etch.
S3, production conductive electrode
As shown in fig. 6, preparing left through hole electrode 2-8 in left through-hole 2-18, right through-hole electricity is prepared in right through-hole 2-17
Pole 2-7 makes first electrode 2-4 in the lower surface of the lower end left through hole electrode 2-8, silicon base 2-6, at right through hole electrode 2-7
It holds, the lower surface of silicon base 2-6 makes second electrode 2-5.Left through hole electrode 2-8, right through hole electrode 2-7, first electrode 2-4 and
The preparation process of second electrode 2-5 generallys use electric plating method, and the material of plating can select Cu, Au or Ni etc..
S4, groove 2-19 is filled using sacrificial layer material
As shown in fig. 7, depositing the first sacrificial layer in the upper surface silicon base 2-6, the first sacrificial layer covers groove 2-19 and silicon
The upper surface substrate 2-6.The thickness of first sacrificial layer is greater than the depth of groove 2-19.The material of first sacrificial layer generallys use boron
Silica glass.First sacrificial layer and the second following sacrificial layers are referred to as sacrificial layer 2-29.
S5, the upper surface silicon base 2-6 is polished
As shown in figure 8, the upper surface silicon base 2-6 is carried out planarization process.Planarization generallys use chemical mechanical grinding
Technique.After silicon base 2-6 planarization, left through hole electrode 2-8 and right through hole electrode 2-7 is exposed in the upper surface silicon base 2-6, and first
Be known as the second sacrificial layer after sacrificial layer planarization, the second sacrificial layer exists only in groove 2-19, the second sacrificial layer upper surface with
The upper surface silicon base 2-6 is coplanar.
S6, hearth electrode 2-3 is prepared
As shown in figure 9, the upper surface silicon base 2-6 and the second sacrificial layer upper surface after the completion of S5 prepare hearth electrode 2-3.
The one end hearth electrode 2-3 is connect with the upper end of left through hole electrode 2-8, and hearth electrode 2-3 covers the second sacrificial layer.The system of hearth electrode 2-3
The standby technique for generalling use magnetron sputtering.
S7, piezoelectric layer 2-2 is prepared
As shown in Figure 10, piezoelectric layer 2-2 is prepared on the upper surface hearth electrode 2-3.Preferably, piezoelectric layer 2-2 is in silicon substrate
Projected area on the 2-6 of bottom is greater than the projected area of groove 2-19 (i.e. the cavity 2-9 of S12) on silicon base 2-6.Piezoelectric layer 2-
2 generally use the method preparation of chemical vapor deposition.
S8, top electrode 2-1 is prepared
As shown in figure 11, top electrode 2-1 is prepared on the upper surface piezoelectric layer 2-2.One end of top electrode 2-1 and right through-hole electricity
Pole 2-7 connection.The technique that the preparation of top electrode 2-1 generallys use magnetron sputtering.
S9, metallic reflector 3-3 is prepared
As shown in figure 12, the metallic reflector 3-3 of surface phasmon 3 is prepared on the upper surface top electrode 2-1.Metal is anti-
The method preparation that layer 3-3 generallys use sputtering or vacuum evaporation is penetrated, the area of metallic reflector 3-3 is less than top electrode 2-1.
S10, preparation media layer 3-2
As shown in figure 13, the preparation media layer 3-2 on the upper surface metallic reflector 3-3.The preparation of dielectric layer 3-2 is usually adopted
With processes such as sputtering or vacuum evaporations.Dielectric layer 3-2 area is usually less than equal to metallic reflector 3-3 area, medium
The area of the lower surface of layer 3-2 is less than or equal to the area of the upper surface metallic reflector 3-3.
S11, metal array layer 3-1 is prepared
As shown in figure 14, metal array layer 3-1 is prepared on the upper surface dielectric layer 3-2, obtains surface phasmon at this time
3.Metal array layer 3-1 can be completed using the techniques such as photoetching or electron beam lithography, removing.
S12, etching sacrificial layer 2-29 are to obtain cavity 2-9
As shown in figure 15, the second sacrificial layer is discharged, cavity 2-9 is obtained, i.e., has obtained piezoelectric membrane 2 at this time, at this time surface
Phasmon 3 and piezoelectric membrane 2 are connection status.Above-mentioned cavity 2-9 can using the second sacrificial layer of HF solution wet etching or
Person is obtained using the second sacrificial layer of gaseous state HF dry etching.
S13, preparation read IC substrate 1
As shown in figure 16, preparation reads IC substrate 1.
S14, reading IC substrate 1 is bonded with piezoelectric membrane 2
As shown in figure 17, by way of bonding, piezoelectric membrane 2 is connect with IC substrate 1 is read, obtains non-system
Cold infrared sensor.Namely the first underlayer electrode 1-1 is connected with first electrode 2-4, by the second underlayer electrode 1-2 and second
Electrode 2-5 connection.Bonding pattern generallys use metal heat pressing bonding technology.
S15, encapsulation
As shown in figure 18, the obtained device of S14 is packaged.4 glue of coaming plate read IC substrate 1 on, then
By the top of 5 glue connection coaming plate 4 of infrared window, reads IC substrate 1, coaming plate 4 and infrared window 5 and form seal chamber.Coaming plate 4
It can be using silicon wafer wafer, sheet glass or ceramic packaging structure etc..The seal chamber can be according to piezoelectric membrane 2 and surface etc. from sharp
The requirement of member 3, vacuumizes seal chamber.Preparation is completed.
Above-mentioned manufacturing method is that piezoelectric membrane 2 and surface phasmon 3 are integrated in reading by MEMS micro-processing method
On IC substrate 1, therefore there are the advantages such as Integrated manufacture, batch production, low in cost.
Claims (8)
1. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic, including piezoelectric membrane (2), feature exists
In the infrared sensor further includes connecting the reading IC substrate (1) of piezoelectric membrane (2) and being located on piezoelectric membrane (2)
Surface phasmon (3) on surface.
2. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as described in claim 1, feature
It is, the surface phasmon (3) includes sequentially connected metallic reflector (3-3), dielectric layer (3-2) and gold from top to bottom
Belong to array layer (3-1).
3. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as claimed in claim 2, feature
It is, the reading IC substrate (1) includes substrate (1-3) and underlayer electrode, and the quantity of the underlayer electrode is two,
Underlayer electrode is located on the upper surface substrate (1-3), and underlayer electrode connects substrate (1-3) and piezoelectric membrane (2).
4. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as claimed in claim 3, feature
It is, the piezoelectric membrane (2) includes silicon base (2-6), cavity (2-9), hearth electrode (2-3), piezoelectric layer (2-2), top electrode
(2-1), left through hole electrode (2-8), right through hole electrode (2-7), first electrode (2-4) and second electrode (2-5), first electrode
(2-4) and second electrode (2-5) are located at the silicon base lower surface (2-6) and correspondingly two underlayer electrodes of connection, Zuo Tongkong
Electrode (2-8) and right through hole electrode (2-7) are respectively positioned in silicon base (2-6) and the first electrode that connects one to one (2-4) and the
Two electrodes (2-5), hearth electrode (2-3) connect left through hole electrode (2-8) and are located on silicon base (2-6), and cavity (2-9) is located at silicon
Between substrate (2-6) and hearth electrode (2-3), and projected area of the cavity (2-9) on silicon base (2-6) is less than hearth electrode (2-
3) projected area on silicon base (2-6), piezoelectric layer (2-2) are arranged on the upper surface hearth electrode (2-3), top electrode (2-1)
It is arranged on the upper surface piezoelectric layer (2-2) and connects right through hole electrode (2-7), metal is set on the upper surface of top electrode (2-1)
Reflecting layer (3-3).
5. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as claimed in claim 4, feature
It is, the piezoelectric layer (2-2) is greater than the throwing of cavity (2-9) on silicon base (2-6) in the projected area on silicon base (2-6)
Shadow area.
6. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as claimed in claim 4, feature
It is, the material of the metal array layer (3-1) is Au, Ag or Al；The material of dielectric layer (3-2) is Ge, MgF2、SiO2Or
AlN；The material of hearth electrode (2-3) and top electrode (2-1) is Mo, W, Al, Pt or Ni；The material of piezoelectric layer (2-2) be AlN,
ZnO、LiNbO3Or quartz；Left through hole electrode (2-8), right through hole electrode (2-7), first electrode (2-4) and second electrode (2-5)
Material be Au, Cu or Ni.
7. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as described in claim 1, feature
It is, infrared sensor further includes setting in the coaming plate (4) read on IC substrate (1) and is arranged on coaming plate (4)
Infrared window (5), the infrared window (5) are located at the surface of surface phasmon (3), read IC substrate (1), enclose
Plate (4) and infrared window (5) collectively form seal chamber.
8. the infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic as described in claim 1, feature
It is, infrared sensor further includes the first articulamentum and the second articulamentum, and piezoelectric membrane (2) passes through the first articulamentum connection surface
Phasmon (3) reads IC substrate (1) and passes through the second articulamentum connection piezoelectric membrane (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811340646.9A CN109459143B (en) | 2018-11-12 | 2018-11-12 | Infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811340646.9A CN109459143B (en) | 2018-11-12 | 2018-11-12 | Infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109459143A true CN109459143A (en) | 2019-03-12 |
| CN109459143B CN109459143B (en) | 2020-02-07 |
Family
ID=65610064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811340646.9A Active CN109459143B (en) | 2018-11-12 | 2018-11-12 | Infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109459143B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110118604A (en) * | 2019-05-30 | 2019-08-13 | 中国科学院长春光学精密机械与物理研究所 | Wide spectrum micro-metering bolometer and preparation method thereof based on hybrid resonant mode |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101063630A (en) * | 2007-06-01 | 2007-10-31 | 中国计量学院 | Infrared detector structure based on micro-bridge resonator and manufacturing method |
| CN101246048A (en) * | 2008-03-18 | 2008-08-20 | 中国科学院长春光学精密机械与物理研究所 | Production method of miniature radiation detection chip |
| US20100128272A1 (en) * | 2006-11-24 | 2010-05-27 | Agency For Science Technology And Research | Method for detecting surface plasmon resonance |
| CN102077376A (en) * | 2008-06-27 | 2011-05-25 | 松下电器产业株式会社 | Element and method for manufacturing the same |
| CN102226719A (en) * | 2011-04-08 | 2011-10-26 | 华中科技大学 | Infrared absorption structure and uncooled infrared detector based on infrared absorption structure |
| CN102483350A (en) * | 2009-06-03 | 2012-05-30 | 皇家飞利浦电子股份有限公司 | Thz frequency range antenna |
| CN202329818U (en) * | 2011-11-18 | 2012-07-11 | 华中科技大学 | Uncooled infrared detection device |
| CN105161564A (en) * | 2015-09-22 | 2015-12-16 | 中国科学院上海技术物理研究所 | Waveband selective enhancement quantum well infrared focal plane applied to hyperspectral imaging |
| CN106684199A (en) * | 2017-02-13 | 2017-05-17 | 中北大学 | Ultra-fast detection structure for metal micro Nano supersrtucture surface plasma polariton |
-
2018
- 2018-11-12 CN CN201811340646.9A patent/CN109459143B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100128272A1 (en) * | 2006-11-24 | 2010-05-27 | Agency For Science Technology And Research | Method for detecting surface plasmon resonance |
| CN101063630A (en) * | 2007-06-01 | 2007-10-31 | 中国计量学院 | Infrared detector structure based on micro-bridge resonator and manufacturing method |
| CN101246048A (en) * | 2008-03-18 | 2008-08-20 | 中国科学院长春光学精密机械与物理研究所 | Production method of miniature radiation detection chip |
| CN102077376A (en) * | 2008-06-27 | 2011-05-25 | 松下电器产业株式会社 | Element and method for manufacturing the same |
| CN102483350A (en) * | 2009-06-03 | 2012-05-30 | 皇家飞利浦电子股份有限公司 | Thz frequency range antenna |
| CN102226719A (en) * | 2011-04-08 | 2011-10-26 | 华中科技大学 | Infrared absorption structure and uncooled infrared detector based on infrared absorption structure |
| CN202329818U (en) * | 2011-11-18 | 2012-07-11 | 华中科技大学 | Uncooled infrared detection device |
| CN105161564A (en) * | 2015-09-22 | 2015-12-16 | 中国科学院上海技术物理研究所 | Waveband selective enhancement quantum well infrared focal plane applied to hyperspectral imaging |
| CN106684199A (en) * | 2017-02-13 | 2017-05-17 | 中北大学 | Ultra-fast detection structure for metal micro Nano supersrtucture surface plasma polariton |
Non-Patent Citations (1)
| Title |
|---|
| 李尧臣 等: "铁电薄膜在红外辐射作用下的响应", 《计算力学学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110118604A (en) * | 2019-05-30 | 2019-08-13 | 中国科学院长春光学精密机械与物理研究所 | Wide spectrum micro-metering bolometer and preparation method thereof based on hybrid resonant mode |
| CN110118604B (en) * | 2019-05-30 | 2020-03-13 | 中国科学院长春光学精密机械与物理研究所 | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109459143B (en) | 2020-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109253743A (en) | Phasmon sound wave resonance dual waveband infrared sensor | |
| CN104030234B (en) | The MEMS infrared sensor preparation method of based thin film bulk acoustic wave resonator | |
| CN109459144A (en) | Wide spectrum infrared sensor based on piezoelectric effect and compound phasmon | |
| CN109502540B (en) | Preparation method of polarization type infrared detector based on film bulk acoustic resonator | |
| CN105784189B (en) | Si-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation | |
| JP4091241B2 (en) | Pressure sensor and pressure sensor manufacturing method | |
| US7483211B2 (en) | Optical tunable filter and method of manufacturing the same | |
| CN100552393C (en) | Infrared ray sensor and manufacture method thereof | |
| CN202019344U (en) | Tunable film bulk acoustic resonator with preinstalled cavity type SOI (silicon on insulator) substrate | |
| WO2006062275A1 (en) | Variable inductor type mems pressure sensor using magnetostrictive effect | |
| CN110118604B (en) | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof | |
| CN106601480B (en) | A kind of high-temperature high-frequency polyimides chip thin film capacitor and its manufacture craft | |
| CN109459148A (en) | Polarized ir sensor based on super surface FBAR resonance frequency temperature drift characteristic | |
| CN109459143A (en) | Infrared sensor based on phasmon and piezoelectric membrane temperature frequency characteristic | |
| CN203998935U (en) | The MEMS infrared sensor of based thin film bulk acoustic wave resonator | |
| CN109459145B (en) | Preparation method of micro-electromechanical resonator based dual-waveband uncooled infrared detector | |
| CN113735053B (en) | Micro-electromechanical infrared sensor and preparation method thereof | |
| US9711707B2 (en) | Method for manufacturing an electronic device | |
| CN108801966B (en) | Multi-element pyroelectric sensitive element for multi-type gas sensing | |
| CN109470367B (en) | Preparation method of FBAR-based broadband uncooled infrared detector | |
| CN109459146A (en) | A kind of preparation method of the non-refrigerated infrared detector based on piezo-electric resonator | |
| JP2014115244A (en) | Infrared detector | |
| CN115241364A (en) | Lithium tantalate pyroelectric infrared detector and manufacturing method thereof | |
| CN210071148U (en) | Etching-enhanced uncooled infrared film detector | |
| CN116829914A (en) | Method for manufacturing a detection device comprising an encapsulation structure with an opaque layer placed on the peripheral wall of a mineral |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |