CN101078652A - SOI silicon wafer based non-refrigerating infrared sensor and its array and production method - Google Patents
SOI silicon wafer based non-refrigerating infrared sensor and its array and production method Download PDFInfo
- Publication number
- CN101078652A CN101078652A CN 200710098513 CN200710098513A CN101078652A CN 101078652 A CN101078652 A CN 101078652A CN 200710098513 CN200710098513 CN 200710098513 CN 200710098513 A CN200710098513 A CN 200710098513A CN 101078652 A CN101078652 A CN 101078652A
- Authority
- CN
- China
- Prior art keywords
- infrared
- layer
- soi
- array
- sensitive device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a no-refrigeration infrared sensor manufactured by the combination of IC machining technology and micro machining technology and the array. Said sensor is made of SOI silicon wafer. Infrared sensing component is diode or MOSFET made of single crystal silicon. The infrared sensing component is located on single crystal silicon of component layer of SOI silicon wafer. Silicon substrate under the single crystal silicon and SOI silicon dioxide insulation layer is removed in etching by micro machining technology. It is connected with other parts by support arm so that the infrared sensing component is suspended. The invention adopts dioxide or MOSFET as infrared sensing component to measure infrared signal. It is provided with higher measuring sensitivity and lower 1/f noise. It makes use of SOI silicon wafer and etching technology to make infrared sensing component hang so that heat dissipation in measuring process can be decreased. It is provided with simple machining process and high finished product rate.
Description
Technical field
The invention belongs to microsensor and micro-detector spare scope, particularly based on soi wafer and utilize ic manufacturing technology and a kind of non-refrigerating infrared sensor and array and manufacture method that silicon micromachining technology combines and makes based on soi wafer.
Background technology
In recent years, infrared sensor (detector) is widely used in numerous areas such as military remote sensing, target recognition and tracking, vehicle night vision, disaster prevention and control, medical science detection, weather forecast, agricultural, geological exploration, and its research and production all are subjected to paying close attention to widely.General, infrared eye can be divided into two types of thermal detector and photon detectors.Photon detector is meant the detector that the photon effect of utilizing semiconductor material is made, and after photon effect was meant that detector absorbs photon, the change of electronic state took place for itself, thereby causes phenomenons such as photovoltaic or photoconduction.Photon detector has short, the low advantages such as (about 5-10mK) of noise equivalent temperature poor (NETD) of response time; But rise because its thermonoise is index with the rising of temperature, cause the thermonoise of device responsive unusually, so photon detector needs the sub-cooled about 80K usually environment temperature.In the laboratory, often adopt the Dewar container for liquefied nitrogen refrigeration plant; In portable thermal imaging system and night vision system, often adopt the mechanical cycles refrigeration to reach required low temperature.These need complicated refrigeration plant, had a strong impact on cost, power consumption and the portability of photon type detector, so application are very limited, generally only are applied in the field that cost is disregarded in military affairs etc.
The measuring principle of the infrared focal plane array that thermal detector and array thereof constitute is the temperature variation that infrared emanation is converted into Sensitive Apparatus, and then measures because the device physics that temperature variation causes or the variation of electrical parameter.Therefore the noise temperature influence of this measuring method is less, does not generally need refrigeration when working, and can directly work at normal temperatures, thereby low price, be easy to operation and maintenance, good reliability.The detectivity of thermal detector is lower, and than low 1-2 the order of magnitude of photon detector, ideal situation can be realized the NETD of 20mK-50mK, can satisfy the requirement of civil area usually.
In order to improve the detectivity of thermal detector, the present invention proposes the infrared array sensor based on SOI (silicon-on-insulator) silicon chip.This sensor adopts monocrystalline silicon diode or MOSFET (MOS (metal-oxide-semiconductor) memory) as infrared sensor, studies show that diode or MOSFET have higher measurement sensitivity, can improve the infrared acquisition rate; Adopt the SOI substrate, can realize easily that the heat of infrared-sensitive device and substrate is isolated, thereby reduce the loss of measuring process intermediate infrared radiation heat, further improve the detectivity of sensor.
Summary of the invention
The purpose of this invention is to provide a kind of non-refrigerating infrared sensor and array and the manufacture method that adopt integrated circuit manufacturing and micro-processing technology to combine based on soi wafer, it is characterized in that described sensor adopts monocrystalline silicon diode or MOSFET as the infrared-sensitive device; The hanging structure that based on the non-refrigerating infrared sensor structure of soi wafer is infrared-sensitive device 4 places links to each other with substrate 1 by supporting arm 2, infrared-sensitive device 4 is connected by interconnection line 3 with treatment circuit 6, infrared reception and reflection horizon 7 cover above the infrared-sensitive device 4, be the buried silicon dioxide layer layer 8 of SOI between infrared-sensitive device 4 and substrate 1, be formed with cavity 5 between buried silicon dioxide layer layer 8 and the substrate 1.
Diode or the MOSFET device layer of described infrared-sensitive device for making on SOI monocrystalline silicon, described diode can be operated in cut-off region, also can be operated in the conducting district, comprises the linear zone or the inelastic region in conducting district.
Described MOSFET can be a nmos type, also can be pmos type, can be half depletion type, also can be complete depletion type, can be operated in linear zone, also can be operated in sub-threshold region.
The manufacture method of described non-refrigerating infrared sensor:
1) adopts integrated circuit fabrication process, with the backing material of soi wafer as the described infrared sensor of manufacturing, produce the infrared-sensitive device of diode or MOSFET on SOI monocrystalline silicon, the structure of this device layer is that lower floor is that SOI silicon substrate, middle level are that buried silicon dioxide layer insulation course and upper strata are single-crystal silicon device layer; The crystal orientation and the thickness of single-crystal silicon device layer are not limit, and the thickness of buried silicon dioxide layer is not limit;
2) utilize silicon micromachining technology, adopt reactive ion etching (RIE) technology but be not limited to reactive ion etching technology, silicon substrate etching below infrared-sensitive device layer and the buried silicon dioxide layer layer is removed, make infrared-sensitive device layer and buried silicon dioxide layer layer unsettled, formation is connected by supporting arm and is bearing in island structure on the substrate, described etch silicon matrix can carry out from the front of soi wafer, also can carry out from the back side of SOI;
3) in order to increase detectivity, form 1 infrared-sensitive unit by 1 or a plurality of infrared-sensitive device, the connected mode of a plurality of infrared-sensitive devices can be a polyphone, also can be in parallel;
4) sensor need adopt infrared absorption layer and reflection horizon, and described absorption layer can be positioned at identical plane with the infrared-sensitive device with the reflection horizon, also can be positioned at the top of infrared-sensitive device or below;
5) described infrared-sensitive unit can use separately, also can rearrange infrared array sensor by a plurality of sensing units, forms infrared focal plane array;
6) treatment circuit of infrared-sensitive unit can be manufactured on the single crystal device layer of SOI and make it to be integrated on the same chip with the infrared-sensitive unit, also can be manufactured on the other chip, is connected with the infrared-sensitive chip by modes such as lead-in wire bondings.
Described supporting arm can be straight, also can be broken line shape, can be 1, also can be a plurality of;
The present invention is owing to adopt above technical scheme, and have the following advantages: 1, the infrared-sensitive device is diode or MOSFET, and these two kinds of devices all have higher measurement sensitivity, and less noise can improve detectivity; 2, adopt the SOI substrate, can realize the hanging structure of infrared-sensitive device easily, improve the hot degree of isolation of infrared-sensitive device and substrate, thereby reduce the thermal loss of device, further improve the detectivity and the response speed of sensor; 3, technology of Cai Yonging and integrated circuit fabrication process are compatible substantially, can reduce manufacturing cost, improve yield rate.
Description of drawings
Fig. 1 MOSFET device is as the circuit diagram of Infrared survey.
The MOSFET infrared sensor synoptic diagram of Fig. 2 SOI substrate.
Embodiment
The purpose of this invention is to provide a kind of non-refrigerating infrared sensor and array and the manufacture method that adopt integrated circuit manufacturing and micro-processing technology to combine based on soi wafer.The infrared-sensitive device can adopt pn junction diode or MOSFET.In the circuit diagram of MOSFET device as Infrared survey shown in Figure 1, the infrared principle of diode measurement is: infrared radiation causes that diode temperature changes, and the electric current of diode is at forward bias voltage V
fEffect under, its output current I
fWith the pass of temperature T be
S wherein
dBe junction area, J
sBe current density, k and T are respectively Boltzmann constant and temperature, and q is a carrier electric charge.Therefore, output current is the function of temperature.
The Infrared survey of MOSFET can make MOSFET be operated in saturation region or sub-threshold region.For example in the saturation region, the rising of temperature can make threshold voltage reduce, but also can make the thermal motion of charge carrier and scattering strengthen simultaneously, and mobility descends; And the effect that mobility descends is more strong, and therefore the temperature rising can make the MOSFET electric current descend generally.MOSFET can be NMOS or PMOS along with temperature rising output current descends.Therefore, absorb the electric current of MOSFET behind the infrared emanation along with temperature variation.
Figure 2 shows that MOSFET infrared sensor structural representation, this MOSFET can be operated in sub-threshold region or saturation region.Figure a and figure b are the sectional view of structure, and figure c is the vertical view of structure.SOI silicon substrate 1 forms cavity 5 among the figure behind over etching, makes infrared-sensitive device 4 (diode or MOSFET) become a unsettled structure, and etching can be carried out from the SOI front, forms the structure of figure a; Also can carry out, form the structure of figure b from the SOI back side.Concrete structure is that the hanging structure at infrared-sensitive device 4 places links to each other with substrate 1 by supporting arm 2, infrared-sensitive device 4 is connected by interconnection line 3 with treatment circuit 6, infrared reception and reflection horizon 7 cover above the infrared-sensitive device 4, be the buried silicon dioxide layer layer 8 of SOI between infrared-sensitive device 4 and substrate 1, be formed with cavity 5 between buried silicon dioxide layer layer 8 and the substrate 1.
Diode or the MOSFET device layer of above-mentioned infrared-sensitive device 4 for making on SOI monocrystalline silicon, described diode can be operated in cut-off region, also can be operated in the conducting district, comprises the linear zone or the inelastic region in conducting district.
Above-mentioned MOSFET can be a nmos type, also can be pmos type, can be half depletion type, also can be complete depletion type, can be operated in linear zone, also can be operated in sub-threshold region.
The manufacturing of non-refrigerating infrared sensor shown in Figure 2 comprises:
1) adopts integrated circuit fabrication process, with the backing material of soi wafer as the described infrared sensor of manufacturing, produce the infrared-sensitive device of diode or MOSFET on SOI monocrystalline silicon, the structure of this device layer is that lower floor is that SOI silicon substrate, middle level are that buried silicon dioxide layer insulation course and upper strata are single-crystal silicon device layer; The crystal orientation and the thickness of single-crystal silicon device layer are not limit, and the thickness of buried silicon dioxide layer is not limit;
2) utilize silicon micromachining technology, adopt reactive ion etching (RIE) technology but be not limited to reactive ion etching technology, silicon substrate etching below infrared-sensitive device layer and the buried silicon dioxide layer layer is removed, make infrared-sensitive device layer and buried silicon dioxide layer layer unsettled, formation is connected by supporting arm and is bearing in island structure on the substrate, and described supporting arm can be straight, also can be broken line shape, can be 1, also can be a plurality of;
Described etch silicon matrix can carry out from the front of soi wafer, also can carry out from the back side of SOI;
3) in order to increase detectivity, form 1 infrared-sensitive unit by 1 or a plurality of infrared-sensitive device, the connected mode of a plurality of infrared-sensitive devices can be a polyphone, also can be in parallel;
4) sensor need adopt infrared absorption layer and reflection horizon, and described absorption layer can be positioned at identical plane with the infrared-sensitive device with the reflection horizon, also can be positioned at the top of infrared-sensitive device or below;
5) described infrared-sensitive unit can use separately, also can rearrange infrared array sensor by a plurality of sensing units, forms infrared focal plane array;
6) treatment circuit of infrared-sensitive unit can be manufactured on the single crystal device layer of SOI and make it to be integrated on the same chip with the infrared-sensitive unit, also can be manufactured on the other chip, is connected with the infrared-sensitive chip by modes such as lead-in wire bondings.
Claims (6)
1. non-refrigerating infrared sensor and array thereof based on a soi wafer is characterized in that, described non-refrigerating infrared sensor adopts monocrystalline silicon diode or MOSFET as the infrared-sensitive device; Described non-refrigerating infrared sensor structure is that the hanging structure at infrared-sensitive device (4) place links to each other with substrate (1) by supporting arm (2), infrared-sensitive device (4) is connected by interconnection line (3) with treatment circuit (6), infrared reception and reflection horizon (7) cover above the infrared-sensitive device (4), be the buried silicon dioxide layer layer (8) of SOI between infrared-sensitive device (4) and substrate (1), be formed with cavity (5) between buried silicon dioxide layer layer (8) and the substrate (1).
2. according to claim 1 described non-refrigerating infrared sensor and array thereof based on soi wafer, it is characterized in that, diode or the MOSFET device layer of described infrared-sensitive device on SOI monocrystalline silicon, making, described diode can be operated in cut-off region, also can be operated in the conducting district, comprise the linear zone or the inelastic region in conducting district.
3. according to claim 1 described non-refrigerating infrared sensor and array thereof based on soi wafer, it is characterized in that, described MOSFET can be a nmos type, it also can be pmos type, it can be half depletion type, also can be complete depletion type, can be operated in linear zone, also can be operated in sub-threshold region.
4. according to claim 1 described non-refrigerating infrared sensor and array thereof, it is characterized in that described infrared-sensitive device is by a plurality of polyphones or compose in parallel the non-refrigerating infrared sensor array based on soi wafer.
5. manufacture method based on the non-refrigerating infrared sensor and the array thereof of soi wafer is characterized in that the manufacturing of described non-refrigerating infrared sensor and array thereof comprises:
1) adopts integrated circuit fabrication process, with the backing material of soi wafer as the described infrared sensor of manufacturing, produce the infrared-sensitive device of diode or MOSFET on SOI monocrystalline silicon, the structure of this device layer is that lower floor is that SOI silicon substrate, middle level are that buried silicon dioxide layer insulation course and upper strata are single-crystal silicon device layer; The crystal orientation and the thickness of single-crystal silicon device layer are not limit, and the thickness of buried silicon dioxide layer is not limit;
2) utilize silicon micromachining technology, adopt reactive ion etching (RIE) technology but be not limited to reactive ion etching technology, silicon substrate etching below infrared-sensitive device layer and the buried silicon dioxide layer layer is removed, make infrared-sensitive device layer and buried silicon dioxide layer layer unsettled, formation is connected by supporting arm and is bearing in island structure on the substrate, described etch silicon matrix can carry out from the front of soi wafer, also can carry out from the back side of SOI;
3) in order to increase detectivity, form 1 infrared-sensitive unit by 1 or a plurality of infrared-sensitive device, the connected mode of a plurality of infrared-sensitive devices can be a polyphone, also can be in parallel;
4) sensor need adopt infrared absorption layer and reflection horizon, and described absorption layer can be positioned at identical plane with the infrared-sensitive device with the reflection horizon, also can be positioned at the top of infrared-sensitive device or below;
5) described infrared-sensitive unit can use separately, also can rearrange infrared array sensor by a plurality of sensing units, forms infrared focal plane array;
6) treatment circuit of infrared-sensitive unit can be manufactured on the single crystal device layer of SOI and make it to be integrated on the same chip with the infrared-sensitive unit, also can be manufactured on the other chip, is connected with the infrared-sensitive chip by modes such as lead-in wire bondings.
6. according to the manufacture method of described non-refrigerating infrared sensor and the array thereof based on soi wafer of claim 5, it is characterized in that described supporting arm can be straight, also can be broken line shape, can be 1, also can be a plurality of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710098513 CN101078652A (en) | 2007-04-19 | 2007-04-19 | SOI silicon wafer based non-refrigerating infrared sensor and its array and production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710098513 CN101078652A (en) | 2007-04-19 | 2007-04-19 | SOI silicon wafer based non-refrigerating infrared sensor and its array and production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101078652A true CN101078652A (en) | 2007-11-28 |
Family
ID=38906238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710098513 Pending CN101078652A (en) | 2007-04-19 | 2007-04-19 | SOI silicon wafer based non-refrigerating infrared sensor and its array and production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101078652A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101439841B (en) * | 2008-12-25 | 2011-07-27 | 中国传媒大学 | Non-refrigeration infrared image sensor chip and preparation thereof |
| CN102431957A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | Method for manufacturing non-refrigerant thermal infrared detector based on black silicon material |
| CN101995295B (en) * | 2009-08-19 | 2013-03-27 | 北京大学 | Non-refrigerating infrared focal plane array as well as preparation method and application thereof |
| WO2021103601A1 (en) * | 2019-11-29 | 2021-06-03 | 上海集成电路研发中心有限公司 | Image sensor structure and forming method |
| CN113091919A (en) * | 2021-04-12 | 2021-07-09 | 上海芯物科技有限公司 | Thermopile sensor and manufacturing method thereof |
-
2007
- 2007-04-19 CN CN 200710098513 patent/CN101078652A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101439841B (en) * | 2008-12-25 | 2011-07-27 | 中国传媒大学 | Non-refrigeration infrared image sensor chip and preparation thereof |
| CN101995295B (en) * | 2009-08-19 | 2013-03-27 | 北京大学 | Non-refrigerating infrared focal plane array as well as preparation method and application thereof |
| CN102431957A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | Method for manufacturing non-refrigerant thermal infrared detector based on black silicon material |
| WO2021103601A1 (en) * | 2019-11-29 | 2021-06-03 | 上海集成电路研发中心有限公司 | Image sensor structure and forming method |
| CN113091919A (en) * | 2021-04-12 | 2021-07-09 | 上海芯物科技有限公司 | Thermopile sensor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104412082B (en) | IR thermopile detectors | |
| CN101078652A (en) | SOI silicon wafer based non-refrigerating infrared sensor and its array and production method | |
| Li et al. | A front-side microfabricated tiny-size thermopile infrared detector with high sensitivity and fast response | |
| CN102509728A (en) | Design and preparation method of non-refrigeration infrared detector | |
| CN103155150A (en) | Range sensor and range image sensor | |
| CN101995295B (en) | Non-refrigerating infrared focal plane array as well as preparation method and application thereof | |
| CN104412386B (en) | Infrared sensor device and the method for manufacturing infrared sensor device | |
| Dong et al. | Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements | |
| Kim et al. | A new uncooled thermal infrared detector using silicon diode | |
| De Luca et al. | SOI multidirectional thermoelectric flow sensor for harsh environment applications | |
| Klem et al. | Low-cost SWIR sensors: advancing the performance of ROIC-integrated colloidal quantum dot photodiode arrays | |
| CN202420685U (en) | Optical read-out heat-mechanical infrared detector structure | |
| CN102928089A (en) | Uncooled pyroelectric linear focal plane and manufacturing method thereof | |
| US9018723B2 (en) | Infrared camera sensor | |
| Doll et al. | High through-put outdoor characterization of silicon photovoltaic modules by moving electroluminescence measurements | |
| TWI552370B (en) | Solid-state light-receiving device for ultraviolet rays | |
| CN101498607A (en) | Full-hollow structure light modulation thermal imaging focal plane array with silicon support frame work | |
| Lee et al. | Fabrication of thermoelectric sensor using silicon-on-insulator structure | |
| KR100332628B1 (en) | infrared detecting device | |
| CN105244355B (en) | Infrared focal plane detector | |
| Oehme et al. | Monolithic Integration of Gesn on Si for IR Camera Demonstration | |
| CN102359820A (en) | Thermal radiation detector for layered oxide polycrystalline ceramic | |
| CN101373153B (en) | Method and apparatus for measuring temperature difference between refrigeration type infrared detector photosensitive elements | |
| Ganwani et al. | Design and Investigation of MEMS-Based Thermopile Detector Arrays for Infrared Sensing Applications | |
| CN103199144A (en) | Optical reading heat-mechanical infrared detector structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20071128 |