CN105244355B - Infrared focal plane detector - Google Patents
Infrared focal plane detector Download PDFInfo
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- CN105244355B CN105244355B CN201510638128.5A CN201510638128A CN105244355B CN 105244355 B CN105244355 B CN 105244355B CN 201510638128 A CN201510638128 A CN 201510638128A CN 105244355 B CN105244355 B CN 105244355B
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- indium
- indium column
- focal plane
- chip
- infrared focal
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Abstract
The present invention relates to infrared focal plane detectors, the infrared focal plane detector includes photosensitive element chip, indium column array, underfill may and silicon reading circuit, photosensitive element chip is interconnected by indium column array and silicon reading circuit, underfill may is filled in the crack between photosensitive element chip and silicon reading circuit, 1/2 of the diameter of indium column no more than photosensitive first spacing in the indium column array.The infrared focal plane detector of the present invention reduces photosensitive element chip fragmentation probability and the indium bump joining failure probability of detector edge.
Description
Technical field
The present invention relates to infrared focal plane detector structural reliability design fields, and in particular to a kind of infrared focus plane spy
Survey device.
Background technology
Infrared Focal Plane Detection Technology have many advantages, such as spectral response wide waveband, can work double tides and be widely used in guided missile
Early warning, intelligence reconnaissance, damage recruitment evaluation and agriculture, woods resource investigation etc. military and civilians field.
As shown in Figure 1, the photosensitive element chip 3 with indium column array passes through with the silicon reading circuit 1 with indium column array
Weldering interconnection process links together, and indium column array 2 is formed after interconnection.Photosensitive element chip 3 is equipped with anti-reflection coating 4.To improve
The reliability of indium column solder joint, filling underfill may 5 is to reduce in the crack usually between photosensitive element chip 3 and silicon reading circuit 1
Indium column solder joint reliability under periodic thermal shock.Indium column acts on of both typically serving to：1, it is electrically connected, i.e., photoproduction telecommunications
It number leads to silicon reading circuit and carries out subsequent processing；2, play the role of mechanical support, photosensitive element chip and silicon reading circuit from
It is physically isolated and comes.
Nowadays it is sensitivity and the resolution ratio for improving infrared imaging system, it is desirable that the array of infrared focal plane detector is advised
Mould the more does the more big, photosensitive first number is also more and more, in addition specific low-temperature working environment so that the finished product of large area array detector
Rate is very low, is usually expressed as the indium bump joining of photosensitive element chip fragmentation and detector edge in liquid nitrogen impact and fails.Institute
With the performance that the specific geometric dimension of indium column detects infrared focus plane plays a crucial role.
In the structure design of infrared focal plane detector, refers to photosensitive first spacing mostly in the prior art, be seldom related to
The selection of indium column diameter, but without reference to the document of relationship between photosensitive first spacing and indium column diameter, so, urgent need is known infrared
Relationship between photosensitive member spacing and indium column diameter, is designed for infrared focal plane detector reliability of structure in focus planar detector
Reference frame is provided.
Invention content
The present invention provides infrared focal plane detectors, it is intended to reduce photosensitive element chip fragmentation probability and drop in liquid nitrogen impact
Low detector edge indium bump joining failure probability.
Unresolved above-mentioned technical problem, infrared focal plane detector of the invention includes photosensitive element chip, indium column array, bottom
Glue and silicon reading circuit are filled, photosensitive element chip is interconnected by indium column array and silicon reading circuit, and underfill may is filled in photosensitive first core
In crack between piece and silicon reading circuit, which is characterized in that the diameter of indium column is no more than between photosensitive member in the indium column array
Away from 1/2.
The volume packing ratio of the indium column is not more than 25%, and the volume packing ratio is defined as the volume divided by indium column of indium column
With the volume of the middle layer of underfill may composition.
The cross section accounting of the indium column is not more than 25%, and the cross sectional area that the cross section accounting is defined as indium column is removed
With the cross sectional area for the middle layer that indium column and underfill may form.
The photosensitive element chip is indium antimonide (InSb) chip or mercury cadmium telluride (HgCdTe) chip or indium gallium arsenic (InGaAs)
Chip or indium arsenic antimony (InAsSb) chip or indium arsenic/gallium antimony (InAs/GaSb) chip or gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs)
Chip.
In the infrared focal plane detector of the present invention, the diameter of indium column depends on photosensitive first spacing, no more than between photosensitive member
Away from 1/2, when being impacted after liquid nitrogen, reduce the indium bump joining of photosensitive element chip fragmentation probability and detector edge
Failure probability.
In the infrared focal plane detector of the present invention, the volume packing ratio of indium column is not more than 25%, and the cross section of indium column accounts for
Than being not more than 25%, the specific size of indium column in indium column array is further defined, the structure for improving large area array detector can
By property.
Description of the drawings
Fig. 1 is infrared focal plane detector structural schematic diagram；
Fig. 2 is the linear expansion coefficient variation with temperature curve of different materials in infrared focal plane detector；
Fig. 3 is trend chart of the infrared focal plane detector normal direction maximum strain with indium column diameter；
Fig. 4 be indium column diameter be 36 microns when, liquid nitrogen impact after infrared focal plane detector normal direction Strain Distribution
Figure；
Fig. 5 be indium column diameter be 24 microns when, liquid nitrogen impact after infrared focal plane detector normal direction Strain Distribution
Figure；
Fig. 6 be indium column diameter be 12 microns when, liquid nitrogen impact after infrared focal plane detector normal direction Strain Distribution
Figure.
Specific implementation mode
Below in conjunction with the accompanying drawings, technical scheme of the present invention is further described in detail.
To indium antimonide (InSb) infrared focal plane detector of 128 × 128 array scales, (photosensitive member spacing is 50 micro- below
Rice) deformation analysis is carried out, which is blended together by photosensitive element chip and silicon reading circuit by the interconnection of indium column array, later in light
Underfill may is inserted in crack between quick element chip and silicon reading circuit.
The selection of indium column diameter simulates to obtain dependent on photosensitive first spacing especially by FEM-software ANSYS.Judgement according to
According to for：The strain amplitude of infrared focal plane detector normal direction obviously becomes smaller after liquid nitrogen impact, on infrared focal plane detector
Surface bending deformation obviously weakens.Its simulation process is as follows：
1) indium column selects 107 cell types of VISCO, and the underfill may, photosensitive element chip and silicon reading circuit after solidification are selected
95 cell types of SOLID carry out direct-coupling field analysis；
2) by the Young's modulus of indium column array, underfill may and silicon reading circuit after photosensitive element chip, interconnection, line expansion system
When in density input material model, institute's input material parameter changes with temperature for number, Poisson.Concrete numerical value such as 1 He of table
Shown in Fig. 2, table 1 is under different temperatures, and the Young's modulus, Poisson's ratio of different materials, Fig. 2 are infrared in infrared focal plane detector
The linear expansion coefficient variation with temperature curve of different materials in focus planar detector.
Under 1. different temperatures of table, the Young's modulus, Poisson's ratio of different materials in infrared focal plane detector
In the range of 50K to 370K, the linear expansion coefficient of underfill may can be described with following formula, α=22.46 × 10-6+5.04
×10-8× (T-273), in formula, the unit of T takes Kelvin.
3) establish geometrical model, i.e., by after photosensitive element chip, interconnection indium column array, underfill may and silicon reading circuit it is several
What size input；
4) temperature of setting infrared focal plane detector is uniform everywhere, consistent, carries out transient analysis, infrared focus plane detection
The temperature of device drops sharply to liquid nitrogen temperature from room temperature, or is slowly raised room temperature from liquid nitrogen temperature；
5) setting Nonlinear Large Deformation analysis；The convergence criterion of analysis environment is set；Carry out operation solution；Check that liquid nitrogen rushes
Hit deformation amplitude that is rear or being warmed to room temperature rear entire infrared focal plane detector and distribution.
6) change indium column diameter size, that is, be stepped up or reduce the diameter of indium column；It should be become larger with detector normal direction
Small is criterion, obtains trend chart of the entire infrared focal plane detector normal direction strain amplitude with indium column diameter.Thus
The indium column diameter selection range met the requirements is obtained, to reduce the thermal deformation of infrared focal plane detector.
Above-mentioned steps are described in detail below：
A. establish the Structural Analysis Model of infrared focal plane detector based on equivalent method, consider computational efficiency, here I
Select 32 × 32 equivalent 128 × 128 array scales, photosensitive 50 microns of spacing of member.
B. the concrete structure parameter of detector, including indium column array, underfill may and silicon after photosensitive element chip, interconnection are set
Reading circuit three-dimensional dimension and local pattern；Material parameter and material model；Mesh generation.Here the thickness of photosensitive element chip is set
Degree is 10 microns, and the height of the indium column after interconnection takes 10 microns, and the thickness of underfill may takes 10 microns, indium column array and underfill may phase
Between arrange, the thickness of silicon reading circuit is 300 microns.Wherein indium column selects eight prisms, diameter to be set as 36 microns.
C. apply boundary condition and primary condition, boundary condition refers to the application face symmetric condition at the plane of symmetry here, simultaneously
The constraint of zero degree of freedom is applied to the lower surface central point of silicon reading circuit；Primary condition is that the temperature of entire device is room temperature.Into
Row finite element analysis solves the strain value and Strain Distribution for obtaining entire infrared focal plane detector normal direction under liquid nitrogen temperature.
Structural strain analysis is carried out here with ANSYS softwares.
D. indium column diameter size is reset, indium pillar height degree is fixed as 10 microns, and indium column diameter is since 36 microns, with 4
The step-length of micron is gradually decreased to 12 microns, remaining structural parameters remains unchanged.Step b-c is repeated, can be obtained under liquid nitrogen temperature
128 × 128 array scale infrared detector normal directions strain the evolution curve with indium column diameter, as shown in Figure 3.From Fig. 3
As can be seen that when indium column diameter is more than 24 microns (see in Fig. 3, indium column diameter takes 28 microns, 32 microns and 36 microns respectively),
The maximum strain near linear of InSb infrared focal plane detector normal directions quickly increases.When indium column diameter is less than 24 microns
(see in Fig. 3, indium column upper surface diameter takes 20 microns, 12 microns and 16 microns respectively), InSb infrared focal plane detector normals
The maximum strain value in direction is centered around near 0.052, is gradually slightly slowly reduced.
Fig. 4 is in the present embodiment, and indium column diameter is set as 36 microns, when height is fixed as 10 microns, is simulated after liquid nitrogen impact
The diagram of strains of obtained InSb infrared focal plane detector normal directions.
Fig. 5 is in the present embodiment, and indium column diameter is set as 24 microns, when height is fixed as 10 microns, is simulated after liquid nitrogen impact
The diagram of strains of obtained InSb infrared focal plane detector normal directions.
Fig. 6 is in the present embodiment, and indium column diameter is set as 12 microns, when height is fixed as 10 microns, is simulated after liquid nitrogen impact
The diagram of strains of obtained InSb infrared focal plane detector normal directions.
Obviously, when indium column diameter be more than 24 microns when, see Fig. 4, in photosensitive element array region, along normal direction, it is every with
Up protrusion is apparent for the photosensitive element chip of the fast array connection of indium, and every photosensitive element chip being connected with underfill may is bright toward lower recess
Aobvious, color distinction of the two on strain cloud atlas is larger, high-visible.When indium column diameter is less than 24 microns, Fig. 6 is seen, in light
Quick element array region, along normal direction, the photosensitive element chip being connect with the fast array of indium up has protrusion, is connected with underfill may
Photosensitive element chip has a recess down, color of the two on strain cloud atlas almost without difference, it is convex with it is recessed between boundary
It is smudgy.From strain data, the surface undulation amplitude of InSb infrared focal plane detectors obviously weakens at this time, flatness
It significantly improves.When indium column diameter is equal to 24 microns, Fig. 5 is seen, in photosensitive element array region, along normal direction, with the fast array of indium
The photosensitive element chip of connection up has protrusion, and the photosensitive element chip being connected with underfill may has recess, protrusion and recess width down
Degree is closer to, and largest deformation amplitude is about 0.053, from strain data, the table of InSb infrared focal plane detectors at this time
Face relief intensity is smaller, and flatness is higher.With 24 microns for line of demarcation, linear fit is made respectively to the artificial data points of both sides,
Linear intersections after fitting are at 25 microns, so we choose 25 microns of upper limits as indium column diameter scope of design, this
When detector in photosensitive first spacing be set as 50 microns.According to indium column and the spaced fact of underfill may, when indium column diameter takes
At 25 microns, the volume packing ratio of indium column is about 25%, and the cross section accounting of indium column is about 25%.
Equivalent Modeling thought is used in institute's established model, in analog result, the position of fitting a straight line intersection point is by photosensitive first spacing
It determines, intersection position is about the half of photosensitive first spacing.Under the premise of this, the detector deformation amplitude simulated is maintained at
Smaller value.Thus indium column diameter of the cross section accounting of volume packing ratio and indium column that indium column can be calculated no more than 25%
Design considerations.The indium column diameter design considerations obtained be it is nondimensional, it is related with photosensitive first spacing.In turn, according to the present invention
The indium column diameter design considerations of summary, can extrapolate because of column diameter range of choice, that is, be not more than the half of photosensitive first spacing.
Photosensitive member spacing is set as 50 microns in the present embodiment, according to indium column diameter design considerations：The volume of indium column is filled
Than the cross section accounting with indium column no more than 25%, it can show that the range of choice of indium column diameter is：It is micro- that indium column diameter is less than 25
Rice.It is used as other embodiment, photosensitive member spacing also to may be set to 30 microns certainly, 20 microns, 10 microns etc., between photosensitive member
Away from can be selected according to actual infrared focal plane array size, according to indium column diameter design considerations：The volume of indium column is filled
Than the cross section accounting with indium column no more than 25%, it can show that corresponding indium column diameter range of choice is respectively：Between photosensitive member
When away from being 30 microns, indium column diameter is less than 15 microns；When photosensitive member spacing is 20 microns, indium column diameter is less than 10 microns；It is photosensitive
When first spacing is 10 microns, indium column diameter is less than 5 microns.Here it will not enumerate.
As other embodiment, photosensitive element chip can also be mercury cadmium telluride (HgCdTe) chip or indium gallium arsenic (InGaAs) core
Piece or indium arsenic antimony (InAsSb) chip or indium arsenic/gallium antimony (InAs/GaSb) chip or gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs) core
Piece.
Claims (4)
1. infrared focal plane detector, which includes that photosensitive element chip, indium column array, underfill may and silicon are read
Go out circuit, photosensitive element chip is interconnected by indium column array and silicon reading circuit, and underfill may is filled in photosensitive element chip and is read with silicon
In crack between circuit, which is characterized in that the diameter of indium column is set as no more than photosensitive first spacing in the indium column array
1/2, the fragmentation probability of photosensitive element chip and the interconnection failure of detector edge indium column are general in being impacted for reducing liquid nitrogen
Rate.
2. infrared focal plane detector according to claim 1, which is characterized in that the volume packing ratio of the indium column is little
In 25%, the volume packing ratio is defined as the volume of the volume of indium column divided by the middle layer of indium column and underfill may composition.
3. infrared focal plane detector according to claim 1, which is characterized in that the cross section accounting of the indium column is little
In 25%, the cross section accounting is defined as the cross-section of the cross sectional area of indium column divided by the middle layer of indium column and underfill may composition
Face area.
4. according to any infrared focal plane detectors of claim 1-3, which is characterized in that the photosensitive element chip is antimony
Indium (InSb) chip or mercury cadmium telluride (HgCdTe) chip or indium gallium arsenic (InGaAs) chip or indium arsenic antimony (InAsSb) chip or indium
Arsenic/gallium antimony (InAs/GaSb) chip or gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs) chip.
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| CN201510638128.5A CN105244355B (en) | 2015-09-30 | 2015-09-30 | Infrared focal plane detector |
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| CN201510638128.5A CN105244355B (en) | 2015-09-30 | 2015-09-30 | Infrared focal plane detector |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638135A (en) * | 2004-12-01 | 2005-07-13 | 中国科学院上海技术物理研究所 | Focal plane device with lowered indium pin pad stress |
| CN102997998A (en) * | 2012-11-26 | 2013-03-27 | 河南科技大学 | Weak-deformation infrared focal plane detector |
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2015
- 2015-09-30 CN CN201510638128.5A patent/CN105244355B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638135A (en) * | 2004-12-01 | 2005-07-13 | 中国科学院上海技术物理研究所 | Focal plane device with lowered indium pin pad stress |
| CN102997998A (en) * | 2012-11-26 | 2013-03-27 | 河南科技大学 | Weak-deformation infrared focal plane detector |
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Application publication date: 20160113 Assignee: Henan Haorui Communication Technology Co., Ltd Assignor: Henan University of Science and Technology Contract record no.: X2019980000304 Denomination of invention: Discrete light filter structure of ultralong lines range infrared focal plane detector Granted publication date: 20180914 License type: Exclusive License Record date: 20191028 |
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