CN102682147A - Structural modeling and structural optimization method for infrared area-array detector - Google Patents
Structural modeling and structural optimization method for infrared area-array detector Download PDFInfo
- Publication number
- CN102682147A CN102682147A CN2011104353070A CN201110435307A CN102682147A CN 102682147 A CN102682147 A CN 102682147A CN 2011104353070 A CN2011104353070 A CN 2011104353070A CN 201110435307 A CN201110435307 A CN 201110435307A CN 102682147 A CN102682147 A CN 102682147A
- Authority
- CN
- China
- Prior art keywords
- array detector
- planar array
- infrared
- detector
- structural
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention relates to a structural modeling and structural optimization method for an infrared area-array detector. The method comprises the following steps of: firstly partitioning an infrared area-array detector structure model into two parts, namely a photosensitive element array region and a peripheral region, according to structural features of the infrared area-array detector; respectively setting material thermal expansion coefficients and analysis models of the photosensitive element array region and the peripheral region; and performing thermal-stress analysis and structural optimization on the a large area-array infrared detector based on the principle of equivalence by utilizing a small area array equivalent to the large area array, thus probably reducing the fragmentation probability of the detector and improving the rate of finished products. The method is applicable to the structural reliability design of an infrared area-array detector, has two effects of accurate modeling and rapid structural parameter optimization, solves the disadvantages of large occupied space in data storage, low speed of solving and the like during structural modeling and optimization of the large area-array infrared detector, and provides a new approach for analyzing the thermal stress of the large area-array infrared detector.
Description
Technical field
The present invention relates to a kind of infrared planar array detector structural modeling and structural optimization method, belong to the photoelectron technology field.
Background technology
Advantage such as that infrared focal plane detector has is highly sensitive, good environmental adaptability, antijamming capability are strong, in light weight, low in energy consumption is widely used in fields such as Aero-Space infrared remote sensing, national defence, meteorology, environment, medical science and scientific instrument.As shown in Figure 1; Infrared focal plane detector usually by face-down bonding technique photosensitive element chip 1 and silicon sensing circuit 4 through indium post array 2 interconnected blending together; The indium post not only provides photosensitive element chip to be communicated with the electricity of silicon sensing circuit input end, also plays the mechanical support effect simultaneously.In the gap of photosensitive element chip and silicon sensing circuit, insert the end afterwards and fill glue 3 materials to improve the welding spot reliability of detector.Detector after blending together is carried on the back attenuate to improve quantum efficiency through photosensitive element chip.Usually planar array detector is such layout, is photosensitive element array zone at the detector core, have around the photosensitive element array zone N electrode and 2-5 capable/be listed as photosensitive unit to arrange, be referred to as outer peripheral areas here.For suppressing ground unrest, raising signal to noise ratio (S/N ratio), highly sensitive infrared focal plane detector works in liquid nitrogen temperature usually.In the fast cooling process because the difference of adjacent materials thermal expansivity will produce thermal stress/strain in detector, cause produce delamination splitting between the fracture of indium post solder joint, the adjacent materials or photosensitive element chip cracked, cause component failure.Especially in large area array infrared detector, thermal stress/strain that thermal mismatching produces makes the cracked problem of device particularly evident.The means of research infrared focal plane detector reliability mainly contain the structural simulation method based on finite element, promptly through analyzing thermal stress/its structural reliability of strain assessment.In the finite element structural simulation, for large area array infrared detector, along with the increase of array scale, the structural unit number that is used to describe detector sharply increases.The array length of side doubles, and the modeling volume increases by three times, and the structural unit number of correspondingly describing detector also sharply increases, and analog computation is consuming time to be exponential increase, can not satisfy structure rapid Optimum demand.Based on equivalence principle, can utilize facet battle array model to substitute big face battle array model and carry out rapid Optimum.But this can bring new problem, and promptly the simple equivalent mode will cause the photosensitive unit row/columns in the planar array detector outer peripheral areas to increase with the increase of equivalent multiple, and this does not obviously conform to the actual conditions.
Summary of the invention
The objective of the invention is to solve analog computation length consuming time in the existing infrared focal plane detector structure modelling method; Can not satisfy structure rapid Optimum demand; And adopt simple equivalent method institute established model and the problem that planar array detector outer peripheral areas reality does not conform to, a kind of infrared planar array detector structural modeling and structural optimization method are proposed for this reason.
The present invention proposes a kind of infrared planar array detector structure modelling method for solving the problems of the technologies described above, and the concrete steps of this method are following:
1). the inward flange along planar array detector N electrode is divided into two parts with infrared planar array detector, is respectively photosensitive element array zone and outer peripheral areas;
2). according to the array scale of infrared planar array detector
M*
M, choose a less infrared planar array detector array scale
m*
mCome the equivalent array scale to do
M*
MInfrared planar array detector carry out the structure thermal stress analysis, the photosensitive unit row/columns before and after the equivalence in the infrared planar array detector outer peripheral areas remains unchanged, here
m=
M/ (
2n), n=1 wherein, 2,3 ... 8;
3). to after cutting apart
m*
mThe material coefficient of thermal expansion coefficient is provided with in the infrared planar array detector structure, after will cutting apart
m*
mIn the infrared planar array detector structure in the photosensitive element array zone material coefficient of thermal expansion coefficient increase to along photosensitive element array arragement direction
2nTimes, after will cutting apart
m*
mThe material coefficient of thermal expansion coefficient increases to along the bigger direction of photosensitive unit's row/columns in the outer peripheral areas in the infrared planar array detector structure outer peripheral areas
2nDoubly, remain unchanged along the less direction of photosensitive unit's row/columns in the outer peripheral areas.
Described step 2) in infrared planar array detector is carried out equivalence and is based on that the thermal expansion mismatch displacement formula obtains between adjacent materials,
Δ y=
L(
α 1 -α 2 )
Δ T, wherein
Δ yBe the thermal expansion mismatch displacement,
LBe the distance of indium post weld spacing symcenter axle in the planar array detector,
α 1 With
α 2 Be respectively the thermal expansivity of adjacent materials in the planar array detector, be the cooling scope.
When setting the material coefficient of thermal expansion coefficient of infrared planar array detector in the described step 3), set its material thermal expansion coefficient respectively to the two parts after cutting apart.
The present invention also provides a kind of infrared planar array detector structural optimization method for solving the problems of the technologies described above.The concrete steps of this method are following:
1). the inward flange along planar array detector N electrode is divided into two parts with infrared planar array detector, is respectively photosensitive element array zone and outer peripheral areas;
2). according to the array scale of infrared planar array detector
M*
M, choose a less infrared planar array detector array scale
m*
mCome the equivalent array scale to do
M*
MInfrared planar array detector carry out the structure thermal stress analysis, the photosensitive unit row/columns before and after the equivalence in the infrared planar array detector outer peripheral areas remains unchanged, here
m=
M/ (
2n), n=1 wherein, 2,3 ... 8;
3). to after cutting apart
m*
mThe material coefficient of thermal expansion coefficient is provided with in the infrared planar array detector structure, after will cutting apart
m*
mIn the infrared planar array detector structure in the photosensitive element array zone material coefficient of thermal expansion coefficient increase to along photosensitive element array arragement direction
2nTimes, after will cutting apart
m*
mThe material coefficient of thermal expansion coefficient increases to along the bigger direction of photosensitive unit's row/columns in the outer peripheral areas in the infrared planar array detector structure outer peripheral areas
2nDoubly, remain unchanged along the less direction of photosensitive unit's row/columns in the outer peripheral areas;
4). to what obtain
m*
mInfrared planar array detector is set the corresponding structure parameter, comprise the diameter of indium post, highly, the end fills glue and fills profile, the physical dimension of photosensitive element array chip and the physical dimension of silicon sensing circuit;
5). carry out mesh of finite element and divide, apply symmetrical boundary condition and original state condition, the lower surface central point to the silicon sensing circuit applies zero degree of freedom constraint simultaneously;
6). to what configure
m*
mInfrared planar array detector carries out transient analysis, writes down stress value and stress distribution on the photosensitive element array;
7). set-up procedure 4) described in the structural parameters set, comprise the diameter of drawing together the indium post, highly, the end fills glue and fills profile, repeating step 4) to 6), draw said
M*
MThe structural stress of array scale infrared focal plane detector and the relation between the structural parameters are confirmed the optimum structure parameter that the minimum stress value is corresponding.
Described step 2) in infrared planar array detector is carried out equivalence and is based on that the thermal expansion mismatch displacement formula obtains between adjacent materials,
Δ y=
L(
α 1 -α 2 )
Δ T, wherein
Δ yBe the thermal expansion mismatch displacement,
LBe the distance of indium post weld spacing symcenter axle in the planar array detector,
α 1 With
α 2 Be respectively the thermal expansivity of adjacent materials in the planar array detector, be the cooling scope.
When setting the material coefficient of thermal expansion coefficient of infrared planar array detector in the described step 3), set its material thermal expansion coefficient respectively to the two parts after cutting apart.
The original state condition is that the initial temperature of whole infrared planar array detector is a room temperature in the described step 5), and the temperature when cooling finishes is 77K.
When in the described step 7) structural parameters of setting being adjusted, only change one of them structural parameters, keep remaining structural parameters constant, repeating step 4) to 6), draw
M*
MThe structural stress of array scale infrared focal plane detector and the relation between each structural parameters.
Described photosensitive element chip is indium antimonide chip, mercury cadmium telluride chip, indium gallium arsenic chip, indium arsenic antimony chip, indium arsenic/gallium antimony chip or gallium arsenide/potassium arsenic aluminate chip.
The invention has the beneficial effects as follows: the present invention is that the boundary is divided into two parts to planar array detector with N electrode inward flange; Photosensitive element array zone and outer peripheral areas; For photosensitive element array zone,, utilize the big face battle array of facet battle array equivalence to carry out structural stress analysis and structure rapid Optimum based on equivalence principle; And to outer peripheral areas; Based on equivalence principle, only the bigger direction of photosensitive unit's row/columns is carried out equivalent transformation in outer peripheral areas, and the less direction of photosensitive unit's row/columns is not carried out equivalent transformation in outer peripheral areas; So just can avoid the problem that institute's established model outer peripheral areas does not conform to the actual conditions in carrying out big planar array detector structure analysis and optimizing process, improve the accuracy of modeling.
Description of drawings
Fig. 1 is infrared planar array detector structural representation.
Embodiment
Further specify below in conjunction with the accompanying drawing specific embodiments of the invention.
128 * 128 infrared focal plane detectors that include the photosensitive unit of 3 row/row with outer peripheral areas below are that example specifies embodiment of the present invention.
The embodiment of a kind of infrared planar array detector structure modelling method of the present invention
Its concrete step is following:
1. according to the array scale 128 * 128 of infrared focal plane detector, confirm a less detector array scale, select 16 * 16 equivalences 128 * 128 here for use, the photosensitive unit row/columns 3 in the planar array detector outer peripheral areas of equivalence back remains unchanged.
2. utilize ANSYS software to set up 16 * 16 Array Model; Photosensitive unit in its outer peripheral areas arranges and is set at 3 row/row; With N electrode inward flange be the boundary the photosensitive element array chip in this panel detector structure model, indium post array, glue is filled at the end and the silicon sensing circuit is divided into two parts; According to the structural symmetry of device, adopt 1/8 structure to set up finite element model.
3. according to the thermal mismatching displacement formula:
Δ y=
L(
α 1 -α 2 )
Δ T, under the prerequisite that thermal shock cooling scope is confirmed, the thermal mismatching displacement is proportional to the product of difference of distance and the adjacent materials thermal expansivity at weld spacing face battle array center.Concerning big planar array detector structure analysis, photosensitive first number increases, and correspondingly increased the distance of weld spacing from the symcenter axle, and the difference of the thermal expansivity of adjacent materials remains unchanged.In order to obtain same thermal mismatching effect; Also can artificially increase thermal expansivity poor of adjacent materials; Keep detector transverse dimension constant simultaneously, make that generally under above-mentioned two kinds of situation, the product of the distance of weld spacing symcenter axle and the difference of adjacent materials thermal expansivity remains unchanged.Based on above-mentioned equivalent theory, material coefficient of thermal expansion coefficient in facet battle array (16 * 16) panel detector structure after cutting apart is provided with as follows: one of which, glue and silicon sensing circuit are filled in above-mentioned photosensitive element array, indium post array, the end of cutting apart 16 * 16 facet array detector structure centre zone, back all increase to 8 times along the thermal expansivity of X axle and Y direction; N electrode, the photosensitive unit of 3 row/row that two, will cut apart back 16 * 16 facet array detector structure outer peripheral areas arranges, primer is arranged, filled to 3 row/row indium posts and the silicon sensing circuit increases to 8 times along the thermal expansivity of Y direction; And it is constant along the thermal expansivity of X-direction; This has just guaranteed that outer peripheral areas does not change before and after equivalent transformation, thereby has set up 16 * 16 facet array detector Structural Analysis Models equivalent with 128 * 128 battle arrays.
The embodiment of a kind of infrared planar array detector structural optimization method of the present invention
At first the structure of infrared focal plane detector is carried out modeling, the concrete steps of this modeling method such as above-mentioned embodiment are said, just no longer detail here, and the process in the face of the structure optimization after the modeling describes down, and its concrete steps are following:
1. the model of setting up is carried out structure optimization, need to set the corresponding structure parameter, comprise indium column diameter, highly, the thickness that glue is filled profile and photosensitive element array chip is filled at the end; Here the diameter of choosing the indium post is 28 microns, highly is 16 microns, and photosensitive element chip thickness is 10 microns; Here need set material parameter (thermal expansivity) respectively to the two parts after cutting apart, photosensitive element chip and silicon sensing circuit are anisotropic resilient materials, and the indium post is described with visco-plasticity Anand model, and fill glue and describes with relevant elastic model of time at the end.
2. carry out mesh of finite element and divide, apply symmetrical boundary condition and starting condition, boundary condition refers to apply in the face of the title condition at plane of symmetry ABCD and ABFE place here, and the lower surface central point B point to the silicon sensing circuit applies zero degree of freedom constraint simultaneously; Starting condition is that the temperature of entire device is room temperature (300K), and the temperature when cooling finishes is 77K, carries out transient analysis and can draw maximum stress value and stress distribution on the photosensitive element chip.
3. the structural parameters of setting described in the set-up procedure 1; Comprise the diameter of indium post, highly (thickness of glue is filled at the end and the height of indium post is equal to); During adjustment, only change one of them structural parameters, keep remaining structural parameters constant; Repeating step 1 and 2; Can draw the structural stress of 128 * 128 planar array detectors and the relation between the structural parameters, thereby the pairing optimum structure parameter of clear and definite minimum stress value is the optimum structure parameter that the periphery includes 128 * 128 infrared focal plane detectors that the photosensitive unit of 3 row/row arranges.
Aforementioned calculation utilizes structure simulation software ANSYS on workstation, to carry out.Include 128 * 128 big planar array detectors that the photosensitive unit of 3 row/row arranges with 16 * 16 facet battle arrays equivalence outer peripheral areas; Here the modeling of 16 * 16 little planar array detectors be with N electrode inward flange be the boundary the photosensitive element array of this model, indium post array, glue is filled at the end and the silicon sensing circuit is cut into inside and outside two parts, sets material parameter respectively.Fill glue, photosensitive element array and silicon sensing circuit and all be increased to 8 times along the thermal expansivity of X axle, Y direction at the indium post array of central area, the end, compares with 128 * 128 array scales, and 16 * 16 array scale size dimensions have reduced 7/8.Effectively reduce the unit number of finite element model, realized the purpose of rapid Optimum.And the photosensitive unit of 3 row/row of perimeter arranges, 3 row/row indium posts are arranged, glue is filled at the end and the silicon sensing circuit increases to 8 times along the thermal expansivity of Y direction; And it is constant along the thermal expansivity of X-direction; Make peripheral photosensitive unit be arranged in equivalent transformation front and back row/columns 3 and remain unchanged, when having realized the structure rapid Optimum, the photosensitive unit of outer peripheral areas arranges and the volume of counterpart no longer doubles; Thereby make institute's established model more press close to true device, accuracy is high, structure optimization speed is fast.
Claims (9)
1. one kind infrared planar array detector structure modelling method, it is characterized in that: the concrete steps of this method are following:
1). the inward flange along planar array detector N electrode is divided into two parts with infrared planar array detector, is respectively photosensitive element array zone and outer peripheral areas;
2). according to the array scale of infrared planar array detector
M*
M, choose a less infrared planar array detector array scale
m*
mCome the equivalent array scale to do
M*
MInfrared planar array detector carry out the structure thermal stress analysis, the photosensitive unit row/columns before and after the equivalence in the infrared planar array detector outer peripheral areas remains unchanged, here
m=
M/ (
2n), n=1 wherein, 2,3 ... 8;
3). to after cutting apart
m*
mThe material coefficient of thermal expansion coefficient is provided with in the infrared planar array detector structure, after will cutting apart
m*
mIn the infrared planar array detector structure in the photosensitive element array zone material coefficient of thermal expansion coefficient increase to along photosensitive element array arragement direction
2nTimes, after will cutting apart
m*
mThe material coefficient of thermal expansion coefficient increases to along the bigger direction of photosensitive unit's row/columns in the outer peripheral areas in the infrared planar array detector structure outer peripheral areas
2nDoubly, remain unchanged along the less direction of photosensitive unit's row/columns in the outer peripheral areas.
2. infrared planar array detector structure modelling method according to claim 1 is characterized in that: described step 2) infrared planar array detector carried out structural equivalents and is based on that the thermal expansion mismatch displacement formula obtains between adjacent materials,
Δ y=
L(
α 1 -α 2 )
Δ T, wherein
Δ yBe the thermal expansion mismatch displacement,
LBe the distance of indium post weld spacing symcenter axle in the planar array detector,
α 1 With
α 2 Be respectively the thermal expansivity of adjacent materials in the planar array detector, be the cooling scope.
3. infrared planar array detector structure modelling method according to claim 1 is characterized in that: when setting the material coefficient of thermal expansion coefficient of infrared planar array detector in the described step 3), set its material thermal expansion coefficient respectively to the two parts after cutting apart.
4. one kind infrared planar array detector structural optimization method, it is characterized in that: the concrete steps of this method are following:
1). the inward flange along planar array detector N electrode is divided into two parts with infrared planar array detector, is respectively photosensitive element array zone and outer peripheral areas;
2). according to the array scale of infrared planar array detector
M*
M, choose a less infrared planar array detector array scale
m*
mCome the equivalent array scale to do
M*
MInfrared planar array detector carry out the structure thermal stress analysis, the photosensitive unit row/columns before and after the equivalence in the infrared planar array detector outer peripheral areas remains unchanged, here
m=
M/ (
2n), n=1 wherein, 2,3 ... 8;
3). to after cutting apart
m*
mThe material coefficient of thermal expansion coefficient is provided with in the infrared planar array detector structure, after will cutting apart
m*
mIn the infrared planar array detector structure in the photosensitive element array zone material coefficient of thermal expansion coefficient increase to along photosensitive element array arragement direction
2nTimes, after will cutting apart
m*
mThe material coefficient of thermal expansion coefficient increases to along the bigger direction of photosensitive unit's row/columns in the outer peripheral areas in the infrared planar array detector structure outer peripheral areas
2nDoubly, remain unchanged along the less direction of photosensitive unit's row/columns in the outer peripheral areas;
4). to what obtain
m*
mInfrared planar array detector is set the corresponding structure parameter, comprise the diameter of indium post, highly, the end fills glue and fills profile, the physical dimension of photosensitive element array chip and the physical dimension of silicon sensing circuit;
5). carry out mesh of finite element and divide, apply symmetrical boundary condition and original state condition, the lower surface central point to the silicon sensing circuit applies zero degree of freedom constraint simultaneously;
6). to what configure
m*
mInfrared planar array detector carries out transient analysis, writes down maximum stress value and stress distribution in the photosensitive element array;
7). set-up procedure 4) described in the structural parameters set, comprise the diameter of indium post, highly, the end fills glue and fills profile, repeating step 4) to 6), draw said
M*
MThe structural stress of array scale infrared eye and the relation between the structural parameters are confirmed the optimum structure parameter that the minimum stress value is corresponding.
5. infrared planar array detector structural optimization method according to claim 4 is characterized in that: described step 2) infrared planar array detector carried out structural equivalents and is based on that the thermal expansion mismatch displacement formula obtains between adjacent materials,
Δ y=
L(
α 1 -α 2 )
Δ T, wherein
Δ yBe the thermal expansion mismatch displacement,
LBe the distance of indium post weld spacing symcenter axle in the planar array detector,
α 1 With
α 2 Be respectively the thermal expansivity of adjacent materials in the planar array detector, be the cooling scope.
6. infrared planar array detector structural optimization method according to claim 4 is characterized in that: when setting the material coefficient of thermal expansion coefficient of infrared planar array detector in the described step 3), set its material thermal expansion coefficient respectively to the two parts after cutting apart.
7. infrared planar array detector structural optimization method according to claim 4 is characterized in that: the original state condition is that the initial temperature of whole infrared planar array detector is a room temperature in the described step 5), and the temperature when cooling finishes is 77K.
8. infrared planar array detector structural optimization method according to claim 4; It is characterized in that: when in the described step 7) structural parameters of setting being adjusted, only change one of them structural parameters, keep remaining structural parameters constant; Repeating step 4) to 6), draw
M*
MThe structural stress of array scale infrared focal plane detector and the relation between each structural parameters.
9. infrared planar array detector structural optimization method according to claim 4 is characterized in that: described photosensitive element chip is indium antimonide chip, mercury cadmium telluride chip, indium gallium arsenic chip, indium arsenic antimony chip, indium arsenic/gallium antimony chip or gallium arsenide/potassium arsenic aluminate chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110435307.0A CN102682147B (en) | 2011-12-22 | 2011-12-22 | Structural modeling and structural optimization method for infrared area-array detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110435307.0A CN102682147B (en) | 2011-12-22 | 2011-12-22 | Structural modeling and structural optimization method for infrared area-array detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102682147A true CN102682147A (en) | 2012-09-19 |
| CN102682147B CN102682147B (en) | 2014-06-25 |
Family
ID=46814071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110435307.0A Expired - Fee Related CN102682147B (en) | 2011-12-22 | 2011-12-22 | Structural modeling and structural optimization method for infrared area-array detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102682147B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105590989A (en) * | 2015-12-28 | 2016-05-18 | 中国电子科技集团公司第十一研究所 | Infrared detector material and preparation method thereof |
| CN110487203A (en) * | 2019-07-10 | 2019-11-22 | 中国科学院上海技术物理研究所 | A kind of structure correcting infrared focal plane detector circuit face shape |
| CN110611157A (en) * | 2019-08-28 | 2019-12-24 | 西安空间无线电技术研究所 | Feed array position holding structure and method in temperature-varying environment |
| CN112435228A (en) * | 2020-11-19 | 2021-03-02 | 中国民航大学 | Airport pavement crack detection method based on high-density anisotropic characteristics |
| CN116130561A (en) * | 2023-04-14 | 2023-05-16 | 山西创芯光电科技有限公司 | Preparation method of superlattice infrared detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101201271A (en) * | 2007-12-21 | 2008-06-18 | 云南民族大学 | Internal modulation type ferro-electricity non-refrigeration infrared focal plane prober |
| CN201842637U (en) * | 2009-05-25 | 2011-05-25 | 张青川 | Large-sized micro-beam array used for optical readout thermal infrared radiation sensor |
| CN102122309A (en) * | 2010-12-16 | 2011-07-13 | 河南科技大学 | Structural optimization method for large-array infrared detector containing bottom filling glue |
-
2011
- 2011-12-22 CN CN201110435307.0A patent/CN102682147B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101201271A (en) * | 2007-12-21 | 2008-06-18 | 云南民族大学 | Internal modulation type ferro-electricity non-refrigeration infrared focal plane prober |
| CN201842637U (en) * | 2009-05-25 | 2011-05-25 | 张青川 | Large-sized micro-beam array used for optical readout thermal infrared radiation sensor |
| CN102122309A (en) * | 2010-12-16 | 2011-07-13 | 河南科技大学 | Structural optimization method for large-array infrared detector containing bottom filling glue |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105590989A (en) * | 2015-12-28 | 2016-05-18 | 中国电子科技集团公司第十一研究所 | Infrared detector material and preparation method thereof |
| CN110487203A (en) * | 2019-07-10 | 2019-11-22 | 中国科学院上海技术物理研究所 | A kind of structure correcting infrared focal plane detector circuit face shape |
| CN110611157A (en) * | 2019-08-28 | 2019-12-24 | 西安空间无线电技术研究所 | Feed array position holding structure and method in temperature-varying environment |
| CN110611157B (en) * | 2019-08-28 | 2021-07-09 | 西安空间无线电技术研究所 | Feed array position holding structure under temperature-varying environment |
| CN112435228A (en) * | 2020-11-19 | 2021-03-02 | 中国民航大学 | Airport pavement crack detection method based on high-density anisotropic characteristics |
| CN116130561A (en) * | 2023-04-14 | 2023-05-16 | 山西创芯光电科技有限公司 | Preparation method of superlattice infrared detector |
| CN116130561B (en) * | 2023-04-14 | 2023-06-27 | 山西创芯光电科技有限公司 | Preparation method of superlattice infrared detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102682147B (en) | 2014-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102682147B (en) | Structural modeling and structural optimization method for infrared area-array detector | |
| CN102122309B (en) | Structural optimization method for large-array infrared detector containing bottom filling glue | |
| Galvez et al. | Rupture reactivation during the 2011 M w 9.0 Tohoku earthquake: Dynamic rupture and ground‐motion simulations | |
| Zhang et al. | Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock | |
| Wang et al. | A review of system-in-package technologies: application and reliability of advanced packaging | |
| CN105549077A (en) | Micro-earthquake epicenter positioning method calculated based on multilevel multi-scale grid similarity coefficient | |
| Tan et al. | Influence of self-weight on electrical power conversion of dense-array concentrator photovoltaic system | |
| Ye et al. | Practical aspects of thermomechanical modeling in electronics packaging: A case study with a SiC power package | |
| CN103970954B (en) | High-density integrated circuit packaging optimization method based on robustness design | |
| La Mura et al. | Three-dimensional seismic wave propagation by modal summation: method and validation | |
| CN102997998A (en) | Weak-deformation infrared focal plane detector | |
| CN117492085A (en) | Soil-structure interaction analysis method, apparatus, facility construction method and system | |
| Kuo et al. | Thermal stress analysis and failure mechanisms for through silicon via array | |
| Yan et al. | Dynamic response law of loess slope with different shapes | |
| CN105244355A (en) | Infrared focal plane detector | |
| CN117057298A (en) | Multi-physical-field simulation design method for three-dimensional heterogeneous integrated system-in-package | |
| Zhou et al. | Survey of Reliability Research on 3D Packaged Memory | |
| CN105226073B (en) | A kind of infrared focal plane detector | |
| Reddy et al. | Wind load analysis of solar farm using computational fluid dynamics | |
| CN105868780A (en) | Method of matching and invoking of antenna thermal deformation compensation database based on orientation adjustment | |
| Zhang et al. | Design rule of indium bump in infrared focal plane array for longer cycling life | |
| CN102156763B (en) | Structure optimizing method for large-planar-array infrared detector without underfill | |
| Zhang et al. | Modeling and stress analysis of large format InSb focal plane arrays detector under thermal shock | |
| CN105870032A (en) | Method for rapidly estimating thickness of photosensitive element chip in infrared focal plane detector | |
| Zhang et al. | Frustum pyramid shape of indium bump to lengthen cycling life of InSb infrared detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 Termination date: 20151222 |
|
| EXPY | Termination of patent right or utility model |