CN105244355A - Infrared focal plane detector - Google Patents
Infrared focal plane detector Download PDFInfo
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- CN105244355A CN105244355A CN201510638128.5A CN201510638128A CN105244355A CN 105244355 A CN105244355 A CN 105244355A CN 201510638128 A CN201510638128 A CN 201510638128A CN 105244355 A CN105244355 A CN 105244355A
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Abstract
The invention relates to an infrared focal plane detector, which comprises a photo-sensitive element chip, an indium bump array, underfill and a silicon read-out circuit, wherein the photo-sensitive element chip is interconnected with the silicon read-out circuit through the indium bump array; the underfill is filled into a crack between the photo-sensitive element chip and the silicon read-out circuit; and the diameters of indium bumps in the indium bump array are not greater than 1/2 of the distance between photo-sensitive elements. According to the infrared focal plane detector provided by the invention, the breakage probability of the photo-sensitive element chip and the interconnect failure probability of the indium bumps on the peripheral edge of the detector are lowered.
Description
Technical field
The present invention relates to infrared focal plane detector structural reliability design field, be specifically related to a kind of infrared focal plane detector.
Background technology
Infrared Focal Plane Detection Technology have spectral response wide waveband, can the advantage such as work double tides and be widely used in missile warning, intelligence reconnaissance, damage recruitment evaluation and the military and civilian field such as agriculture, woods resource investigation.
As shown in Figure 1, the photosensitive element chip 3 with indium post array is linked together by inverse bonding interconnection process with the silicon reading circuit 1 with indium post array, forms indium post array 2 after interconnection.Photosensitive element chip 3 is provided with antireflecting coating 4.For improving the reliability of indium post solder joint, inserting the end in the crack usually between photosensitive element chip 3 and silicon reading circuit 1 and filling glue 5 to reduce indium post solder joint reliability under periodic thermal shock.Indium post plays the effect of two aspects usually: 1, be electrically connected, namely the photoproduction signal of telecommunication led to silicon reading circuit and carry out subsequent treatment; 2, play mechanical support effect, photosensitive element chip and silicon reading circuit are kept apart physically.
Nowadays for improving sensitivity and the resolution of infrared imaging system, require that the array scale of infrared focal plane detector does larger and larger, photosensitive first number also gets more and more, in addition specific low-temperature working environment, make the rate of finished products of large planar array detector very low, be usually expressed as during liquid nitrogen impacts that photosensitive element chip is cracked lost efficacy with the indium bump joining of detector edge.So the concrete physical dimension of indium post plays vital effect to the performance that infrared focus plane detects.
In the structural design of infrared focal plane detector, photosensitive first spacing is mostly mentioned in prior art, seldom relate to choosing of indium column diameter, but the document of relation between photosensitive first spacing and indium column diameter is not related to, so, urgent need to know in infrared focal plane detector relation between photosensitive first spacing and indium column diameter, for the design of infrared focal plane detector reliability of structure provides reference frame.
Summary of the invention
The invention provides infrared focal plane detector, be intended to reduce the cracked probability of photosensitive element chip and reduction detector edge indium bump joining failure probability in liquid nitrogen impact.
Unresolved above-mentioned technical problem, infrared focal plane detector of the present invention comprises photosensitive element chip, indium post array, the end fill glue and silicon reading circuit, photosensitive element chip is interconnected by indium post array and silicon reading circuit, the end, is filled in the crack that glue is filled between photosensitive element chip and silicon reading circuit, it is characterized in that, in described indium post array, the diameter of indium post is not more than 1/2 of photosensitive first spacing.
The volume packing ratio of described indium post is not more than 25%, and the volume that described volume packing ratio is defined as indium post fills the volume in the intermediate layer of glue composition divided by indium post and the end.
The cross section accounting of described indium post is not more than 25%, and the cross sectional area that described cross section accounting is defined as indium post fills the cross sectional area in the intermediate layer of glue composition divided by indium post and the end.
Described photosensitive element chip is indium antimonide (InSb) chip or mercury cadmium telluride (HgCdTe) chip or indium gallium arsenic (InGaAs) chip or indium arsenic antimony (InAsSb) chip or indium arsenic/gallium antimony (InAs/GaSb) chip or gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs) chip.
In infrared focal plane detector of the present invention, the diameter of indium post depends on photosensitive first spacing, is not more than 1/2 of photosensitive first spacing, when going through liquid nitrogen and impacting, reduces the indium bump joining failure probability of the cracked probability of photosensitive element chip and detector edge.
In infrared focal plane detector of the present invention, the volume packing ratio of indium post is not more than 25%, and the cross section accounting of indium post is not more than 25%, further defines the concrete size of indium post in indium post array, improves the structural reliability of large planar array detector.
Accompanying drawing explanation
Fig. 1 is infrared focal plane detector structural representation;
Fig. 2 is the coefficient of linear expansion variation with temperature curve of different materials in infrared focal plane detector;
Fig. 3 is the changing trend diagram of infrared focal plane detector normal direction maximum strain with indium column diameter;
Fig. 4 is indium column diameter when being 36 microns, the diagram of strains of infrared focal plane detector normal direction after liquid nitrogen impacts;
Fig. 5 is indium column diameter when being 24 microns, the diagram of strains of infrared focal plane detector normal direction after liquid nitrogen impacts;
Fig. 6 is indium column diameter when being 12 microns, the diagram of strains of infrared focal plane detector normal direction after liquid nitrogen impacts.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is further described in detail.
Deformation analysis is carried out to indium antimonide (InSb) infrared focal plane detector (photosensitive first spacing is 50 microns) of 128 × 128 array scale below, this detector is blended together by indium post array interconnect by photosensitive element chip and silicon reading circuit, inserts the end and fill glue in the crack afterwards between photosensitive element chip and silicon reading circuit.
The selective dependency of indium column diameter, in photosensitive first spacing, obtains especially by FEM-software ANSYS simulation.Judgment basis is: after liquid nitrogen impacts, the strain amplitude of infrared focal plane detector normal direction obviously diminishes, and infrared focal plane detector upper surface bending deformation obviously weakens.Its simulation process is as follows:
1) VISCO107 cell type selected by indium post, and the end after solidification is filled glue, photosensitive element chip and silicon reading circuit and selects SOLID95 cell type, carries out direct-coupling field analysis;
2) is filled the Young's modulus of glue and silicon reading circuit, coefficient of linear expansion, Poisson indium post array, the end after photosensitive element chip, interconnection when in density input material model, institute's input material parameter all changes with temperature.Concrete numerical value is as shown in table 1 and Fig. 2, and table 1 is under different temperatures, Young's modulus, the Poisson's ratio of different materials in infrared focal plane detector, and Fig. 2 is the coefficient of linear expansion variation with temperature curve of different materials in infrared focal plane detector.
Under table 1. different temperatures, Young's modulus, the Poisson's ratio of different materials in infrared focal plane detector
In the scope of 50K to 370K, the coefficient of linear expansion that glue is filled at the end can describe with following formula, α=22.46 × 10
-6+ 5.04 × 10
-8× (T-273), in formula, Kelvin gets in the unit of T.
3) set up geometrical model, fill the physical dimension input of glue and silicon reading circuit by indium post array, the end after photosensitive element chip, interconnection;
4) temperature setting infrared focal plane detector is even, consistent everywhere, and carry out transient analysis, the temperature of infrared focal plane detector is sharply reduced to liquid nitrogen temperature from room temperature, or is slowly elevated to room temperature from liquid nitrogen temperature;
5) Nonlinear Large Deformation analysis is set; The convergence criterion of analysis environments is set; Carry out computing to solve; Check that liquid nitrogen impacts deformation amplitude that is rear or whole infrared focal plane detector after rising to room temperature and distribution.
6) change indium column diameter size, namely progressively increase or reduce the diameter of indium post; With detector normal direction strain size for criterion, obtain the changing trend diagram of whole infrared focal plane detector normal direction strain amplitude with indium column diameter.Obtain the indium column diameter selection range met the demands thus, in order to reduce the thermal deformation of infrared focal plane detector.
Introduce above-mentioned steps in detail below:
A. set up the Structural Analysis Model of infrared focal plane detector based on equivalent method, consider computational efficiency, we select 32 × 32 equivalence 128 × 128 array scale here, photosensitive first spacing 50 microns.
B. set the concrete structure parameter of detector, glue and silicon reading circuit three-dimensional dimension and local pattern are filled in indium post array, the end comprised after photosensitive element chip, interconnection; Material parameter and material model; Stress and strain model.Here the thickness setting photosensitive element chip is 10 microns, and the height of the indium post after interconnection gets 10 microns, and the thickness that glue is filled at the end gets 10 microns, and glue is filled alternately in indium post array and the end, and the thickness of silicon reading circuit is 300 microns.Wherein eight prisms selected by indium post, and diameter is set as 36 microns.
C. apply boundary condition and initial condition, boundary condition refers in plane of symmetry place applying face symmetric condition here, applies zero degree of freedom constraint to the lower surface central point of silicon reading circuit simultaneously; Initial condition is the temperature of whole device is room temperature.Carry out finite element analysis solve draw liquid nitrogen temperature under the strain value of whole infrared focal plane detector normal direction and Strain Distribution.Here ANSYS software is utilized to carry out structural strain analysis.
D. reset indium column diameter size, indium post height is fixed as 10 microns, and indium column diameter, from 36 microns, is progressively reduced to 12 microns with the step-length of 4 microns, and all the other structural parameters remain unchanged.Repeat step b-c, can show that 128 × 128 array scale Infrared Detectors normal directions strains are with the evolution curve of indium column diameter under liquid nitrogen temperature, as shown in Figure 3.As can be seen from Figure 3, when indium column diameter is greater than 24 microns (see in Fig. 3, indium column diameter gets 28 microns respectively, 32 microns and 36 microns), the maximum strain near linear of InSb infrared focal plane detector normal direction increases fast.When indium column diameter is less than 24 microns (see in Fig. 3, indium post upper surface diameter gets 20 microns, 12 microns and 16 microns respectively), the maximum strain value of InSb infrared focal plane detector normal direction is centered around near 0.052, slightly slowly reduces gradually.
Fig. 4 is in the present embodiment, and indium column diameter is set as 36 microns, and when height is fixed as 10 microns, liquid nitrogen impacts the diagram of strains of simulating the InSb infrared focal plane detector normal direction obtained afterwards.
Fig. 5 is in the present embodiment, and indium column diameter is set as 24 microns, and when height is fixed as 10 microns, liquid nitrogen impacts the diagram of strains of simulating the InSb infrared focal plane detector normal direction obtained afterwards.
Fig. 6 is in the present embodiment, and indium column diameter is set as 12 microns, and when height is fixed as 10 microns, liquid nitrogen impacts the diagram of strains of simulating the InSb infrared focal plane detector normal direction obtained afterwards.
Obviously, when indium column diameter is greater than 24 microns, see Fig. 4, in photosensitive element array region, along normal direction, every photosensitive element chip be connected with the fast array of indium is obvious toward projection, and every to fill the photosensitive element chip that glue is connected the end of with obvious toward lower recess, the two is straining the color distinction on cloud atlas comparatively greatly, high-visible.When indium column diameter is less than 24 microns, see Fig. 6, in photosensitive element array region, along normal direction, the photosensitive element chip be connected with the fast array of indium up has projection, fill the end of with the photosensitive element chip that glue is connected and down have depression, the two color on strain cloud atlas is almost as broad as long, epirelief and recessed between unclear boundaries unclear.From strain data, now the surface undulation amplitude of InSb infrared focal plane detector obviously weakens, and evenness significantly improves.When indium column diameter equals 24 microns, see Fig. 5, in photosensitive element array region, along normal direction, the photosensitive element chip be connected with the fast array of indium up has projection, fill the end of with the photosensitive element chip that glue is connected and down have depression, protruding comparatively close with depression amplitude, largest deformation amplitude is about 0.053, from strain data, now the surface undulation amplitude of InSb infrared focal plane detector is less, and evenness is higher.With 24 microns for line of demarcation, respectively linear fit is done to the artificial data points of both sides, linear intersections after matching is at 25 microns of places, so we choose 25 microns of upper limits as indium column diameter scope of design, now in detector, photosensitive first spacing setting is 50 microns.Fill the glue fact alternately according to indium post and the end, when indium column diameter gets 25 microns, the volume packing ratio of indium post is about 25%, and the cross section accounting of indium post is about 25%.
Adopt Equivalent Modeling thought in institute's established model, in analog result, the position of fitting a straight line intersection point is determined by photosensitive first spacing, and position of intersecting point is about the half of photosensitive first spacing.Under this prerequisite, simulate the detector deformation amplitude obtained and remain on less value.The cross section accounting of the volume packing ratio and indium post that can calculate indium post thus is all not more than the indium column diameter design considerations of 25%.The indium column diameter design considerations drawn is nondimensional, relevant with photosensitive first spacing.Conversely, according to the indium column diameter design considerations that the present invention sums up, can extrapolate because of column diameter range of choice, namely be not more than the half of photosensitive first spacing.
In the present embodiment, photosensitive first spacing setting is 50 microns, according to the design considerations of indium column diameter: the volume packing ratio of indium post and the cross section accounting of indium post are all not more than 25%, can show that the range of choice of indium column diameter is: indium column diameter is less than 25 microns.Certain about other execution modes, photosensitive first spacing also can be set as 30 microns, 20 microns, 10 microns etc., photosensitive first spacing can be selected according to the infrared focal plane array size of reality, according to the design considerations of indium column diameter: the volume packing ratio of indium post and the cross section accounting of indium post are all not more than 25%, can show that corresponding indium column diameter range of choice is respectively: when photosensitive first spacing is 30 microns, indium column diameter is less than 15 microns; When photosensitive first spacing is 20 microns, indium column diameter is less than 10 microns; When photosensitive first spacing is 10 microns, indium column diameter is less than 5 microns.Here will not enumerate.
As other execution modes, photosensitive element chip also can be mercury cadmium telluride (HgCdTe) chip or indium gallium arsenic (InGaAs) chip or indium arsenic antimony (InAsSb) chip or indium arsenic/gallium antimony (InAs/GaSb) chip or gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs) chip.
Claims (4)
1. infrared focal plane detector, this infrared focal plane detector comprises photosensitive element chip, indium post array, the end fill glue and silicon reading circuit, photosensitive element chip is interconnected by indium post array and silicon reading circuit, the end, is filled in the crack that glue is filled between photosensitive element chip and silicon reading circuit, it is characterized in that, in described indium post array, the diameter of indium post is not more than 1/2 of photosensitive first spacing.
2. infrared focal plane detector according to claim 1, is characterized in that, the volume packing ratio of described indium post is not more than 25%, and the volume that described volume packing ratio is defined as indium post fills the volume in the intermediate layer of glue composition divided by indium post and the end.
3. infrared focal plane detector according to claim 1, is characterized in that, the cross section accounting of described indium post is not more than 25%, and the cross sectional area that described cross section accounting is defined as indium post fills the cross sectional area in the intermediate layer of glue composition divided by indium post and the end.
4. according to the arbitrary described infrared focal plane detector of claim 1-3, it is characterized in that, described photosensitive element chip is indium antimonide (InSb) chip or mercury cadmium telluride (HgCdTe) chip or indium gallium arsenic (InGaAs) chip or indium arsenic antimony (InAsSb) chip or indium arsenic/gallium antimony (InAs/GaSb) chip or gallium arsenide/potassium arsenic aluminate (GaAs/AlGaAs) chip.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107976258A (en) * | 2016-10-25 | 2018-05-01 | 上海桐钰电力科技有限公司 | Medium-wave infrared flame detecting technology is disturbed in a kind of antisum |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638135A (en) * | 2004-12-01 | 2005-07-13 | 中国科学院上海技术物理研究所 | Focal plane device with lowered indium pin pad stress |
| CN102997998A (en) * | 2012-11-26 | 2013-03-27 | 河南科技大学 | Weak-deformation infrared focal plane detector |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638135A (en) * | 2004-12-01 | 2005-07-13 | 中国科学院上海技术物理研究所 | Focal plane device with lowered indium pin pad stress |
| CN102997998A (en) * | 2012-11-26 | 2013-03-27 | 河南科技大学 | Weak-deformation infrared focal plane detector |
Non-Patent Citations (1)
| Title |
|---|
| 孟庆端，吕衍秋，鲁正雄，孙维国: "InSb红外焦平面探测器结构应力的ANSYS分析", 《红外与毫米波学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107976258A (en) * | 2016-10-25 | 2018-05-01 | 上海桐钰电力科技有限公司 | Medium-wave infrared flame detecting technology is disturbed in a kind of antisum |
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Application publication date: 20160113 Assignee: Henan Haorui Communication Technology Co., Ltd Assignor: Henan University of Science and Technology Contract record no.: X2019980000304 Denomination of invention: Discrete light filter structure of ultralong lines range infrared focal plane detector Granted publication date: 20180914 License type: Exclusive License Record date: 20191028 |
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