CN114890373A - Self-supporting MEMS infrared light source and preparation method thereof - Google Patents
Self-supporting MEMS infrared light source and preparation method thereof Download PDFInfo
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- CN114890373A CN114890373A CN202210505995.1A CN202210505995A CN114890373A CN 114890373 A CN114890373 A CN 114890373A CN 202210505995 A CN202210505995 A CN 202210505995A CN 114890373 A CN114890373 A CN 114890373A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005457 Black-body radiation Effects 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0353—Holes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to the technical field of semiconductor photoelectric components, and particularly discloses a self-supporting MEMS infrared light source and a preparation method thereof. The MEMS infrared light source and the preparation method thereof disclosed by the invention are self-supported by the heating resistor, and when the MEMS infrared light source works, the heat conduction between the black body radiation layer and the silicon substrate can be reduced because the dielectric film below the heating resistor is reduced, so that the working temperature of the MEMS infrared light source is improved, and the response rate and the radiation efficiency of the MEMS infrared light source are further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric components, in particular to a self-supporting MEMS infrared light source and a preparation method thereof.
Background
The MEMS infrared light source radiates wide-spectrum infrared light outwards by heating the MEMS film according to a thermal radiation principle. The MEMS infrared light source basically consists of a substrate, a supporting structure film, a heating layer and a radiation layer. The substrate is used to support the entire membrane and the heating and radiation layer structures. The support membrane is the support structure for the heating layer and the radiation layer. The heating layer is made of conductive metal, and converts electricity into heat energy by applying a certain voltage. Since the infrared spectrum produced by black body radiation is dependent on the radiation temperature, the film region heats up to several hundred degrees during normal operation of the light source. Then, wide-spectrum infrared light is radiated outwards through the heat radiation principle.
Currently, MEMS infrared light sources are manufactured by semiconductor processes, starting with a silicon wafer substrate, followed by deposition of a supporting thin film structure on the wafer, followed by fabrication of a heating layer and a radiation layer on the thin film. However, during the operation of the light source, the normal operating temperature of the light source is several hundred degrees, so that the film generates a large thermal stress due to its own thermal expansion. The thermal stress may cause the film to become unstable, causing the film to crack, etc. And in the process of switching on and off the light source, the mechanical strength of the film is reduced along with the increase and decrease of the temperature of the film, and the stability of the light source is reduced.
Disclosure of Invention
In order to solve the technical problems, the invention provides a self-supporting MEMS infrared light source and a preparation method thereof, so as to achieve the purposes of improving the working temperature of the MEMS infrared light source and improving the response rate, radiation efficiency and working stability of the MEMS infrared light source.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a self-supporting MEMS infrared light source comprises a silicon substrate, a dielectric film, a heating resistor and a black body radiation layer which are sequentially arranged from bottom to top, wherein the heating resistor forms a graph structure through a metal stripping process, the black body radiation layer is located in the middle area of the heating resistor, a back hole area penetrating through the silicon substrate is formed in the back of the silicon substrate through etching, and the dielectric film located below the black body radiation layer is etched.
In the above scheme, the dielectric thin film is made of at least one material selected from silicon dioxide, silicon nitride, and silicon oxynitride.
In the above scheme, the heating resistor is made of platinum.
In the above scheme, the blackbody radiation layer is made of platinum black, carbon nanotubes or porous silicon.
A preparation method of a self-supporting MEMS infrared light source comprises the following steps:
s1, selecting a silicon wafer as a silicon substrate;
s2, depositing a dielectric film on the silicon substrate by using a film growth technology;
s3, depositing a heating resistor on the dielectric film, and forming a pattern structure through a metal stripping process;
s4, depositing a black body radiation layer in the middle area of the heating resistor;
s5, etching the back surface of the silicon substrate to form a back hole area penetrating through the silicon substrate;
and S6, removing the dielectric film below the black body radiation layer by using an etching method.
In the above scheme, in step S2, the thin film growth technique is a PECVD method.
In the above scheme, in step S3, the heating resistor is deposited by using an electron beam evaporation or sputtering process.
In the above scheme, in step S4, the blackbody radiation layer is deposited by electroplating.
In the above scheme, in step S5, an ICP dry etching technique is used to perform etching to form a back hole region.
Through the technical scheme, the self-supporting MEMS infrared light source and the preparation method thereof provided by the invention have the following beneficial effects:
the MEMS infrared light source is self-supported by the heating resistor, and when the MEMS infrared light source works, the heat conduction between the black body radiation layer and the silicon substrate can be reduced because the dielectric film below the heating resistor is reduced, so that the working temperature of the MEMS infrared light source is improved, and the response rate and the radiation efficiency of the MEMS infrared light source are further improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a front sectional view of a self-supporting MEMS infrared light source according to an embodiment of the present invention;
FIG. 2 is a top view of a self-supporting MEMS infrared light source according to an embodiment of the present invention;
fig. 3 is a process flow diagram of a method for manufacturing a self-supporting MEMS infrared light source according to an embodiment of the present invention.
In the figure, 1, a silicon substrate; 2. a dielectric film; 3. a heating resistor; 4. a blackbody radiation layer; 5. a back hole area.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
The invention provides a self-supporting MEMS infrared light source, which comprises a silicon substrate 1, a dielectric film 2, a heating resistor 3 and a black body radiation layer 4 which are sequentially arranged from bottom to top as shown in figures 1 and 2, wherein the heating resistor 3 forms a graphic structure through a metal stripping process, the black body radiation layer 4 is positioned in the middle area of the heating resistor 3, the back surface of the silicon substrate 1 forms a back hole area 5 penetrating through the silicon substrate 1 through etching, and the dielectric film 2 positioned below the black body radiation layer 4 is etched.
In this embodiment, the material of the dielectric film 2 is at least one selected from silicon dioxide, silicon nitride, and silicon oxynitride.
The heating resistor 3 is made of platinum, and the blackbody radiation layer 4 is made of platinum black, carbon nano tubes or porous silicon.
A method for preparing a self-supporting MEMS infrared light source, as shown in fig. 3, comprises the following steps:
s1, selecting a silicon wafer as a silicon substrate 1;
s2, depositing a dielectric film 2 on the silicon substrate 1 by using a film growth technology (such as PECVD);
s3, depositing the heating resistor 3 on the dielectric film 2 by using an electron beam evaporation or sputtering process, and forming a pattern structure by using a metal stripping process;
s4, depositing the black body radiation layer 4 in the middle area of the heating resistor 3 by an electroplating method;
s5, etching the back surface of the silicon substrate 1 by adopting an ICP dry etching technology to form a back hole area 5 penetrating through the silicon substrate 1;
and S6, removing the dielectric film 2 below the black body radiation layer 4 by using an etching method.
The dynamic response of the MEMS infrared light source can be expressed through mathematical calculation, and if the MEMS infrared light source is assumed, the radiation temperature of the medium film 2 is uniformly distributed, and the natural convection heat transfer and the heat conduction heat transfer are neglected, and the light source is cooled only through heat radiation. Temperature of dielectric film 2
Change and radiation energy thereof
The change relationship is as follows:
in the formula, A represents the area of the black body radiation layer 4, sigma represents the Stefan-Boltzmann constant, epsilon is the emissivity of the black body radiation layer 4, and T is the integral temperature of the medium film 2 and the black body radiation layer 4;
the relationship between power and temperature change during a cycle is:
in the above formula, c p Is the thermal conductivity of the dielectric film 2 material, d is the thickness of the dielectric film 2 material, ρ is the density of the dielectric film 2 material, and t is the time.
The light source frequency formula can be obtained from formulas (1) and (2):
according to the formula (3), the modulation frequency of the light source and the emissivity of the material
Temperature ofTThickness of material filmdThermal capacity of materialc p And density p. Therefore, the response speed of the light source can be improved by increasing the temperature of the light source film and using the material with low heat capacity.
According to the formula (3), the heat conduction between the MEMS infrared light source with the medium film 2 structure removed and the silicon substrate 1 is smaller, the temperature of the radiation area of the infrared light source becomes higher, and therefore, the response rate and the radiation efficiency are higher. Meanwhile, the failure of the MEMS infrared light source caused by different thermal expansion among different film materials is avoided.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A self-supporting MEMS infrared light source is characterized by comprising a silicon substrate, a dielectric film, a heating resistor and a black body radiation layer which are sequentially arranged from bottom to top, wherein the heating resistor forms a graph structure through a metal stripping process, the black body radiation layer is positioned in the middle area of the heating resistor, the back surface of the silicon substrate forms a back hole area penetrating through the silicon substrate through etching, and the dielectric film positioned below the black body radiation layer is etched.
2. The self-supporting MEMS infrared light source of claim 1 wherein the dielectric film material is selected from at least one of silicon dioxide, silicon nitride, and silicon oxynitride.
3. The self-supporting MEMS infrared light source of claim 1 wherein the heating resistor is platinum.
4. The MEMS infrared light source of claim 1, wherein the blackbody radiation layer is made of platinum black, carbon nanotubes or porous silicon.
5. A method of making a self-supporting MEMS infrared light source as claimed in claim 1, comprising the steps of:
s1, selecting a silicon wafer as a silicon substrate;
s2, depositing a dielectric film on the silicon substrate by using a film growth technology;
s3, depositing a heating resistor on the dielectric film, and forming a pattern structure through a metal stripping process;
s4, depositing a black body radiation layer in the middle area of the heating resistor;
s5, etching the back surface of the silicon substrate to form a back hole area penetrating through the silicon substrate;
and S6, removing the dielectric film below the black body radiation layer by using an etching method.
6. The method of claim 5, wherein in step S2, the thin film growth technique is PECVD.
7. The method of claim 5, wherein in step S3, the heating resistor is deposited by electron beam evaporation or sputtering.
8. The method of claim 5, wherein the step S4 is performed by electroplating to deposit the blackbody radiation layer.
9. The method for preparing a self-supporting MEMS infrared light source according to claim 5, wherein in step S5, a back hole region is formed by etching by using an ICP dry etching technique.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113979402A (en) * | 2021-09-30 | 2022-01-28 | 山东大学 | MEMS infrared light source and preparation method thereof |
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| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
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| CN113979402A (en) * | 2021-09-30 | 2022-01-28 | 山东大学 | MEMS infrared light source and preparation method thereof |
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- 2022-05-11 CN CN202210505995.1A patent/CN114890373A/en active Pending
Patent Citations (7)
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|---|---|---|---|---|
| EP0859536A1 (en) * | 1997-02-15 | 1998-08-19 | Cerberus Ag | Infrared radiator and its application |
| KR20010038600A (en) * | 1999-10-26 | 2001-05-15 | 구자홍 | resistive bolometer sensor and fabrication methode of the same |
| JP2001221737A (en) * | 2000-02-08 | 2001-08-17 | Yokogawa Electric Corp | Infrared light source, its manufacturing method, and infrared gas analyzer |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
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| US20190059139A1 (en) * | 2017-08-15 | 2019-02-21 | Dragan Grubisik | Electrically conductive infrared emitter and back reflector in a solid state source apparatus and method of use thereof |
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Non-Patent Citations (1)
| Title |
|---|
| DONGSHENG SHU: "A Miniature Infrared Emitter with Ultra-high Emissivity", 16TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (IEEE-NEMS), 21 June 2021 (2021-06-21), pages 1175 - 1178 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113979402A (en) * | 2021-09-30 | 2022-01-28 | 山东大学 | MEMS infrared light source and preparation method thereof |
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