CN110289337B - Etching method of photovoltaic cell - Google Patents
Etching method of photovoltaic cell Download PDFInfo
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- CN110289337B CN110289337B CN201910556205.0A CN201910556205A CN110289337B CN 110289337 B CN110289337 B CN 110289337B CN 201910556205 A CN201910556205 A CN 201910556205A CN 110289337 B CN110289337 B CN 110289337B
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- 238000005530 etching Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 104
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000007704 transition Effects 0.000 claims abstract description 23
- 238000001020 plasma etching Methods 0.000 claims abstract description 21
- 239000002346 layers by function Substances 0.000 claims abstract description 17
- 230000001965 increasing effect Effects 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910018125 Al-Si Inorganic materials 0.000 claims abstract description 9
- 229910018520 Al—Si Inorganic materials 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 8
- 229910018503 SF6 Inorganic materials 0.000 claims description 7
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000003245 coal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000005922 Phosphane Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses an etching method of a photovoltaic cell, which comprises the following steps: providing a photovoltaic cell to be etched, wherein the photovoltaic cell to be etched comprises an aluminum layer and an N layer, and an Al-Si transition layer is arranged between the interfaces of the aluminum layer and the N layer; and removing the transition layer by adopting a reactive ion etching technology and increasing etching power and etching gas flow. In the invention, a reactive ion etching technology is adopted, and a transition layer combining metal and a semiconductor is removed by increasing etching power and improving etching gas flow, enhancing the physical etching effect, so as to achieve the purpose of etching the PIN functional layer; the invention can solve the transition layer of the mixture of metal and semiconductor substances without replacing the existing etching gas and equipment, effectively shorten the production period, improve the production efficiency and save the production cost.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to an etching method of a photovoltaic cell.
Background
The energy is the power of human social development, it is the important material basis that national economic development and people's living standard improve, with the consumption of non-renewable energy such as oil, coal, natural gas, etc., people have focused on the renewable energy of demand, such as wind energy, solar energy, hydroenergy, biological energy, etc., hope to solve the serious energy crisis problem day by day through the development and utilization to these renewable energy, solar energy is a kind of renewable, clean energy that is applied more extensively, the environmental protection energy of global general popularization, compared with coal, oil and nuclear energy, it has unique advantage: firstly, the environment is not polluted; secondly, no region and resource limitation exists; thirdly, the energy source is not limited. Therefore, efficient use of solar energy has become a common human consensus. Photovoltaic power generation is a means of utilizing solar energy by directly utilizing solar radiation energy to convert the solar radiation energy into electric energy, and currently, in solar photovoltaic application, research and development of silicon-based solar cells are widely regarded, account for 90% of photovoltaic market, and are the mainstream of the current photovoltaic market.
At present, a photovoltaic cell is formed by sequentially laminating glass, a PIN functional layer and an aluminum layer, wherein a conductive film is deposited on the upper side of the glass, the PIN functional layer and the aluminum layer are sequentially laminated from bottom to top, the PIN functional layer comprises a P layer, an I layer and an N layer, the P layer is in contact with the conductive film, and the N layer is in contact with the aluminum layer. The inventors have found in practice that after the etching of the aluminium layer is completed, there is hardly any etching away of a-si when etching the PIN functional layer, and even if the etching time is prolonged, it is found that the etching is still not moved. The inventor finds that the N layer is in contact with the aluminum layer, aluminum can permeate into the a-Si to form an Al-Si transition layer, and the PIN functional layer cannot be etched by the conventional dry etching process due to the high hardness and stable chemical properties of the transition layer.
Therefore, a new etching method for photovoltaic cells is needed to solve the problem that the PIN functional layer is difficult to etch due to the penetration of aluminum into the a-si.
Disclosure of Invention
In order to make up for the defects of the prior art, the invention provides an etching method of a photovoltaic cell.
The technical problem to be solved by the invention is realized by the following technical scheme:
a photovoltaic cell etching method comprises the following steps:
providing a photovoltaic cell to be etched, wherein the photovoltaic cell to be etched comprises an aluminum layer and an N layer, and an Al-Si transition layer is arranged between the interfaces of the aluminum layer and the N layer;
and removing the transition layer by adopting a reactive ion etching technology and increasing etching power and etching gas flow.
Furthermore, the photovoltaic cell to be etched is formed by sequentially laminating a glass layer, a functional layer and an aluminum layer, wherein a conductive film is deposited on the upper side of the glass layer, the functional layer and the aluminum layer are sequentially laminated from bottom to top, the functional layer comprises a P layer, an I layer and an N layer, the P layer is in contact with the conductive film, and the N layer is in contact with the aluminum layer; and an Al-Si transition layer exists between the interfaces of the aluminum layer and the N layer.
Further, the material of the P layer is a-Si doped with B element and C element; the N layer is made of a-Si doped with P element; the material of the I layer is a-Si without doping elements.
Furthermore, the reactive ion etching technology adopts RIE etching equipment, and within the allowable range of the manufacture procedure of the RIE etching equipment, the etching power is increased and the etching gas flow is increased.
Further, the etching gas is chlorine and sulfur hexafluoride.
The invention has the following beneficial effects:
in the invention, a reactive ion etching technology is adopted, and a transition layer combining metal and a semiconductor is removed by increasing etching power and improving etching gas flow, enhancing the physical etching effect, so as to achieve the purpose of etching the PIN functional layer; the invention can solve the transition layer of the mixture of metal and semiconductor substances without replacing the existing etching gas and equipment, effectively shorten the production period, improve the production efficiency and save the production cost.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The present invention will be described in detail with reference to examples, which are only preferred embodiments of the present invention and are not intended to limit the present invention.
The inventor finds that the N layer is in contact with the aluminum layer, aluminum in the aluminum layer can permeate into a-Si to form an Al-Si transition layer, and the transition layer has high hardness and stable chemical properties, so that chemical etching in etching is hindered, physical etching does not play a great role, and the PIN layer is not etched. The inventor realizes that the aim of etching the PIN functional layer can be achieved by removing the transition layer firstly, removing the transition layer by means of physical etching on the basis that the chemical etching cannot work, and then carrying out the chemical etching.
Based on the knowledge, the invention provides the etching method of the photovoltaic cell, which can achieve the aim of removing the transition layer without replacing gas and equipment by strengthening the physical etching effect, thereby saving the production cost and shortening the production period.
A photovoltaic cell etching method comprises the following steps:
providing a photovoltaic cell to be etched, wherein the photovoltaic cell to be etched comprises an aluminum layer and an N layer, and an Al-Si transition layer is arranged between the interfaces of the aluminum layer and the N layer;
and removing the transition layer by adopting a reactive ion etching technology and increasing etching power and etching gas flow.
More specifically, the photovoltaic cell to be etched is formed by sequentially laminating a glass layer, a functional layer and an aluminum layer, wherein a conductive film is deposited on the upper side of the glass layer, the functional layer and the aluminum layer are sequentially laminated from bottom to top, the functional layer comprises a P layer, an I layer and an N layer, the P layer is in contact with the conductive film, and the N layer is in contact with the aluminum layer; and an Al-Si transition layer exists between the interfaces of the aluminum layer and the N layer.
The P layer is made of a-Si doped with B element and C element; the N layer is made of a-Si doped with P element; the material of the I layer is a-Si without doping elements.
In the present invention, the preparation method of the P layer, the I layer and the N layer is not particularly limitedPreferably, silane SiH may be used4And H2 is a reaction gas, and a layer I is deposited; silane SiH can be introduced4And phosphane PH3Depositing N layers by using mixed gas; silane SiH can be introduced4Borane B2H5And CH4The mixed gas deposits a P layer.
The conductive film is preferably, but not limited to, AZO.
The main equipment and terms used in the present invention are explained as follows:
RIE, known as Reactive Ion Etching, is a dry Etching process in the microelectronics industry.
The etching process of Reactive Ion Etching (RIE) has both physical and chemical functions. Under a certain pressure, the etching gas is glow-generated under the action of a high-frequency electric field to generate plasma. The plasma contains ions, electrons, and free radicals. Under the action of the electric field, electrons are accelerated to collide with gas molecules or atoms, and when the energy of the electrons reaches a certain degree, the collision is changed into inelastic collision to generate secondary electrons, and the secondary electrons further collide with the gas molecules to continuously ionize the gas molecules. The plasma generated by inelastic collision has stronger chemical activity and can chemically react with the surface of the etched substance to form a volatile substance, thereby achieving the aim of etching. Meanwhile, the high-energy ions carry out physical bombardment on the surface of the sample under the action of an electric field, and carry out physical etching with larger momentum.
In the invention, the reactive ion etching technology adopts RIE etching equipment, and the etching power is increased and the etching gas flow is increased within the allowable range of the manufacture procedure of the RIE etching equipment.
The etching process conditions usually adopted are that the etching power is 700W, the flow rate of etching gas is controlled to be 30sccm of chlorine and 300sccm of sulfur hexafluoride. Under the etching condition, the purpose of etching the PIN layer cannot be achieved. In the invention, the etching power is controlled at 800W, the flow of the etching gas is controlled at 100sccm of chlorine and 400sccm of sulfur hexafluoride. According to the invention, on the basis of not violating the limit of RIE etching equipment, the physical etching effect can be enhanced by increasing the etching power and increasing the etching gas flow, the transition layer can be effectively removed by the enhanced physical etching, and meanwhile, the influence on the conductive film is avoided, so that the purpose of etching the PIN layer is achieved.
In the invention, the etching gas comprises chlorine and sulfur hexafluoride. When the reactive ion etching is adopted, chlorine and sulfur hexafluoride are used as etching gases, the chlorine and the sulfur hexafluoride form a reactive particle group plasma, positive ion and active group radial are generated under the action of a radio frequency power supply, and the positive ion and the active group radial and a-Si are subjected to chemical and physical reactions to generate volatile substances, so that the etching purpose is achieved.
The above-mentioned embodiments only express the embodiments of the present invention, and the description is more specific and detailed, but not understood as the limitation of the patent scope of the present invention, but all the technical solutions obtained by using the equivalent substitution or the equivalent transformation should fall within the protection scope of the present invention.
Claims (1)
1. The method for etching the photovoltaic cell is characterized by comprising the following steps of:
providing a photovoltaic cell to be etched, wherein the photovoltaic cell to be etched comprises an aluminum layer and an N layer, and an Al-Si transition layer is arranged between the interfaces of the aluminum layer and the N layer;
removing the transition layer by increasing etching power and improving etching gas flow by adopting a reactive ion etching technology;
the etching power is controlled to be 800w, the etching gas is chlorine and sulfur hexafluoride, the flow of the etching gas is controlled to be 100sccm in the chlorine and 400sccm in the sulfur hexafluoride;
the photovoltaic cell to be etched is formed by sequentially laminating glass, a functional layer and an aluminum layer, wherein a conductive film is deposited on the upper side of the glass, the functional layer comprises a P layer, an I layer and an N layer which are sequentially arranged from bottom to top in a laminated mode, the P layer is in contact with the conductive film, and the N layer is in contact with the aluminum layer; an Al-Si transition layer exists between the interfaces of the aluminum layer and the N layer;
the material of the P layer is a-Si doped with B element and C element; the N layer is made of a-Si doped with P element; the material of the layer I is a-Si without doping elements;
the reactive ion etching technology adopts RIE etching equipment, and etching power and etching gas flow are increased within the allowable range of the manufacture procedure of the RIE etching equipment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910556205.0A CN110289337B (en) | 2019-06-25 | 2019-06-25 | Etching method of photovoltaic cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910556205.0A CN110289337B (en) | 2019-06-25 | 2019-06-25 | Etching method of photovoltaic cell |
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| CN110289337A CN110289337A (en) | 2019-09-27 |
| CN110289337B true CN110289337B (en) | 2021-09-17 |
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| CN106920771B (en) * | 2015-12-28 | 2020-03-10 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing source-drain contact plug of metal gate transistor |
| CN106276773B (en) * | 2016-08-31 | 2018-06-29 | 中国科学院微电子研究所 | MEMS infrared light supplies of suspension structure and preparation method thereof |
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