CN112794280A - Micro-electro-mechanical infrared light source with light-gathering structure and preparation method thereof - Google Patents

Micro-electro-mechanical infrared light source with light-gathering structure and preparation method thereof Download PDF

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Publication number
CN112794280A
CN112794280A CN202011631944.0A CN202011631944A CN112794280A CN 112794280 A CN112794280 A CN 112794280A CN 202011631944 A CN202011631944 A CN 202011631944A CN 112794280 A CN112794280 A CN 112794280A
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layer
structural layer
light
gathering
micro
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张洋
荆二荣
徐德辉
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Xiamen Yiying Electronic Technology Co ltd
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Xiamen Yiying Electronic Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00317—Packaging optical devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis

Abstract

The invention provides a micro-electromechanical infrared light source with a light-gathering structure and a preparation method thereof, wherein the preparation method comprises the following steps: forming a first structural layer, wherein the first structural layer sequentially comprises a substrate layer, a supporting layer and a black body radiation layer from bottom to top, a vacuum cavity is arranged in the substrate layer, and a through hole is formed in the supporting layer; forming a second structural layer, wherein a light-gathering cavity is arranged in the second structural layer, and a reflecting layer is arranged on the inner wall of the light-gathering cavity; forming a third structural layer comprising a filter layer; the first structure layer and the second structure layer are bonded through the first bonding layer, the second structure layer and the third structure layer are bonded through the second bonding layer, the second structure layer is located between the first structure layer and the third structure layer, the vacuum cavity, the through hole and the light-gathering cavity are sequentially communicated, the black body radiation layer is exposed out of the bottom of the light-gathering cavity, and the top opening of the light-gathering cavity is sealed by the third structure layer. In the invention, the light-gathering structure is directly integrated on the chip, and has the advantages of high integration level, low manufacturing cost, high consistency, good packaging airtightness and better infrared radiation effect.

Description

Micro-electro-mechanical infrared light source with light-gathering structure and preparation method thereof
Technical Field
The invention belongs to the field of micro-electromechanical infrared light sources, and relates to a micro-electromechanical infrared light source with a light-gathering structure and a preparation method thereof.
Background
The infrared source of the micro electro mechanical system is an infrared source emitting chip with low cost and high radiance based on the blackbody radiation technology, simultaneously has the advantages of low power consumption, small size, high modulation rate and the like, and can be widely applied to the field of high-end infrared gas sensors as a core device.
In infrared gas sensor application, the sensitivity and accuracy of gas detection are related to the infrared light power received by the system, so how to improve the optical coupling efficiency of the system is very important. Generally, a polished aluminum alloy condenser in a paraboloid shape is required to be adopted for packaging a micro-electromechanical infrared light source, so that the divergence of the light source is reduced, and the optical coupling efficiency in the use process is improved. The main problems of this method while improving the optical coupling efficiency include: firstly, the infrared light source is large in size, so that the miniaturization integration treatment of a subsequent gas sensor is not facilitated; second, the cost is greatly increased. Because the lens of the mid-infrared band is extremely expensive, the parabolic condenser with polished mirror surface can be used as a substitute to realize the condensation effect, but the packaging cost of the parabolic condenser reaches more than 5 times of the cost of the micro-electro-mechanical infrared light source chip; third, there is a lack of hermetic protection. Although the light-transmitting film or the optical filter can be added at the position of the collecting lens for protection, the size of the collecting lens is large, and meanwhile, the price of the light-transmitting film or the optical filter of the intermediate infrared is high, so that most micro-electromechanical infrared light sources are packaged in an open mode, the micro-electromechanical infrared light sources are lack of air tightness protection, are easily influenced by environmental factors such as dust, water vapor and the like, and the long-term reliability of the micro-electromechanical infrared light sources is influenced.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a mems infrared light source with a light-gathering structure and a method for manufacturing the same, which are used to solve the problems of large radiation angle, large package size, high package cost and poor package hermeticity of the mems infrared light source in the prior art.
In order to achieve the above and other related objects, the present invention provides a micro-electromechanical infrared light source with a light-gathering structure, including:
the first structural layer sequentially comprises a substrate layer, a supporting layer and a black body radiation layer from bottom to top, wherein a vacuum cavity is arranged in the substrate layer, and a through hole communicated with the vacuum cavity is formed in the supporting layer;
the second structural layer is positioned above the first structural layer and is in bonding connection with the first structural layer through a first bonding layer, a light-gathering cavity is arranged in the second structural layer, the light-gathering cavity penetrates through the second structural layer in the vertical direction and is communicated with the through hole, the black body radiation layer is exposed at the bottom of the light-gathering cavity, and a reflection layer is arranged on the inner wall of the light-gathering cavity;
and the third structural layer is positioned above the second structural layer and is in bonding connection with the second structural layer through a second bonding layer, the third structural layer seals the top opening of the light-gathering cavity, and the third structural layer comprises a filter layer.
Optionally, the material of the substrate layer includes silicon or germanium; the material of the second structural layer comprises silicon or germanium; the third structural layer is made of silicon or germanium.
Optionally, the support layer includes an insulating material.
Optionally, the blackbody radiation layer comprises nanostructures comprising raised structures or recessed structures.
Optionally, the blackbody radiation layer comprises a silicon black layer.
Optionally, the first structural layer further includes a metal pad, and the metal pad is located on the surface of the support layer and is spaced from the second structural layer by a preset distance.
Optionally, the inner wall of the light collection cavity is parabolic in shape.
Optionally, the reflective layer comprises at least one of a metal layer, a ceramic layer, and a polyester layer.
Optionally, the height of the light-gathering cavity ranges from 0.01mm to 10 mm.
Optionally, the filter layer comprises one or more thin films.
Optionally, the filter layer comprises a band pass filter or a broad spectrum light transmissive sheet.
Optionally, the first bonding layer comprises BCB solder or gold-tin solder and the second bonding layer comprises BCB solder or gold-tin solder.
The invention provides a preparation method of a micro-electromechanical infrared light source with a light-gathering structure, which comprises the following steps:
forming a first structural layer, wherein the first structural layer sequentially comprises a substrate layer, a supporting layer and a black body radiation layer from bottom to top, a vacuum cavity is arranged in the substrate layer, and a through hole communicated with the vacuum cavity is formed in the supporting layer;
forming a second structural layer, wherein a light-gathering cavity is arranged in the second structural layer, the light-gathering cavity penetrates through the second structural layer in the vertical direction, and a reflecting layer is arranged on the inner wall of the light-gathering cavity;
forming a third structural layer comprising a filter layer;
the first structural layer is bonded with the second structural layer through the first bonding layer, the second structural layer is bonded with the third structural layer through the second bonding layer, the second structural layer is located between the first structural layer and the third structural layer, the vacuum cavity is formed by sequentially communicating the through holes and the light gathering cavity, the black body radiation layer is exposed at the bottom of the light gathering cavity, and the top opening of the light gathering cavity is sealed by the third structural layer.
Optionally, the first structural layer is formed based on a first wafer, the second structural layer is formed based on a second wafer, and the third structural layer is formed based on a third wafer, and the bonding is wafer-level bonding.
Optionally, the vacuum chamber is formed in the substrate layer by at least one of dry etching and wet etching.
Optionally, an etchant is introduced to the surface of the substrate layer through the through hole to etch the vacuum chamber.
Optionally, the light-gathering cavity is formed in the second structural layer by at least one of isotropic etching and anisotropic etching.
Optionally, the preparation method of the reflective layer includes one of magnetron sputtering, thermal evaporation and chemical vapor deposition.
Optionally, the first structural layer is bonded to the second structural layer and then bonded to the third structural layer, or the second structural layer is bonded to the third structural layer and then bonded to the first structural layer.
As described above, the micro-electromechanical infrared light source with a light-gathering structure of the present invention includes a first structural layer, a second structural layer, and a third structural layer, wherein the light-gathering cavity and the reflective layer are directly fabricated in the second structural layer as a light-gathering structure, and the three structural layers are sequentially connected by bonding, wherein the first structural layer, the second structural layer, and the third structural layer can be directly fabricated based on a low-cost wafer, and different functional layers are respectively micro-machined on three different wafers, so as to achieve the purpose of optical coupling, and the bonding can be wafer-level bonding. Compared with the traditional polished aluminum alloy condenser lens scheme, the condensing structure is directly integrated on the chip and has the advantages of high integration level, low manufacturing cost, high consistency and good packaging air tightness. Meanwhile, the micro-electromechanical infrared light source device prepared by the preparation method has lower packaging cost and better infrared radiation effect.
Drawings
FIG. 1 is a process flow diagram of a method for manufacturing a micro-electromechanical infrared light source with a light-gathering structure according to the present invention.
FIG. 2 is a schematic cross-sectional view of a first structural layer of a MEMS infrared light source with a self-concentrating structure according to the present invention.
FIG. 3 is a schematic cross-sectional view of a second structural layer of the MEMS infrared light source with a self-contained light-gathering structure according to the present invention.
FIG. 4 is a schematic cross-sectional view of a third structural layer of the MEMS infrared light source with a self-concentrating structure according to the present invention.
FIG. 5 is a schematic cross-sectional view of a MEMS infrared light source with a self-contained light-gathering structure according to the present invention.
Fig. 6 shows a simulation result of the condensing effect of the conventional bare infrared light source without using the parabolic condensing structure.
Fig. 7 shows the simulation result of the condensing effect of the infrared light source of the present invention using a paraboloid having a height of 0.5 mm.
Fig. 8 shows the simulation result of the condensing effect of the infrared light source of the present invention using a paraboloid having a height of 1 mm.
Description of the element reference numerals
1 first structural layer
101 substrate layer
102 support layer
103 black body radiation layer
104 vacuum chamber
105 through hole
106 metal bonding pad
2 second structural layer
201 light-gathering cavity
202 reflective layer
3 third structural layer
301 optical filter
4 first bonding layer
5 second bonding layer
S1-S4
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 8. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
The embodiment provides a method for manufacturing a micro-electromechanical infrared light source with a light-gathering structure, please refer to fig. 1, which is a process flow diagram of the manufacturing method, and includes the following steps:
s1: forming a first structural layer, wherein the first structural layer sequentially comprises a substrate layer, a supporting layer and a black body radiation layer from bottom to top, a vacuum cavity is arranged in the substrate layer, and a through hole communicated with the vacuum cavity is formed in the supporting layer;
s2: forming a second structural layer, wherein a light-gathering cavity is arranged in the second structural layer, the light-gathering cavity penetrates through the second structural layer in the vertical direction, and a reflecting layer is arranged on the inner wall of the light-gathering cavity;
s3: forming a third structural layer comprising a filter layer;
s4: the first structural layer is bonded with the second structural layer through the first bonding layer, the second structural layer is bonded with the third structural layer through the second bonding layer, the second structural layer is located between the first structural layer and the third structural layer, the vacuum cavity is formed by sequentially communicating the through holes and the light gathering cavity, the black body radiation layer is exposed at the bottom of the light gathering cavity, and the top opening of the light gathering cavity is sealed by the third structural layer.
Referring to fig. 2, step S1 is executed: forming a first structural layer 1, wherein the first structural layer 1 sequentially comprises a substrate layer 101, a support layer 102 and a blackbody radiation layer 103 from bottom to top, a vacuum cavity 104 is arranged in the substrate layer, and a through hole 105 communicated with the vacuum cavity 104 is arranged in the support layer 102.
Specifically, the blackbody radiation layer 103 is used to generate infrared light at a certain temperature. A portion of the support layer 102 is suspended above the vacuum chamber 104 to support the blackbody radiation layer 103, and another portion is located on the surface of the substrate layer 101 to support metal pads 106. The vacuum chamber 101 is in a vacuum state after subsequent bonding for thermal isolation.
As an example, the material of the substrate layer 1 includes, but is not limited to, silicon, germanium, or other suitable semiconductor substrate, and in this embodiment, the substrate layer 1 takes a silicon substrate as an example.
As an example, the blackbody radiation layer 103 may comprise nanostructures, such as raised structures or recessed structures. In this embodiment, the blackbody radiation layer 103 includes a silicon black structure.
As an example, the first structural layer 1 further includes a metal pad 106, the metal pad 106 is located on the surface of the support layer 102 and is spaced from the second structural layer 2 by a predetermined distance for connecting an external circuit, and a material of the metal pad 106 includes, but is not limited to, aluminum.
As an example, forming the first structural layer includes the steps of:
step S1-1: the substrate layer 101 is provided, and the support layer 102 is formed on the substrate layer 101 by chemical vapor deposition, physical vapor deposition, or other suitable methods. The support layer 102 may be made of an insulating material, including but not limited to one of silicon dioxide and aluminum oxide.
Step S1-2: the blackbody radiation layer 103 is formed on the support layer 102.
Step S1-3: the through hole 105 is formed in the support layer 102 by photolithography and etching processes, and the through hole 105 is used for subsequently introducing an etchant to the surface of the substrate layer.
Step S1-4: the vacuum chamber 104 is formed in the substrate layer 101 using at least one of dry etching and wet etching. In this embodiment, the use of a composition containing XeF is preferred2Etching gas dry etching of the substrate layer 1 (xenon difluoride)01 to obtain said vacuum chamber 101. The support layer 102 and the blackbody radiation layer may be protected with a protective layer prior to etching.
It should be noted that the order of the above steps can be adjusted as needed, and is not limited to this embodiment.
As an example, the first structural layer 1 may be formed on the basis of a first wafer, a portion of which serves as the substrate layer 1. And subsequent bonding adopts wafer-level bonding, and finally, a plurality of micro-electromechanical infrared light sources with light-gathering structures can be obtained by cutting the wafer-level bonding structure.
Referring to fig. 3, step S2 is executed: form second structural layer 2, be equipped with in the second structural layer and gather light chamber 201, gather light chamber 201 and run through in the vertical direction second structural layer 2, the inner wall in spotlight chamber 2 is equipped with reflection stratum 202.
Specifically, the light-gathering cavity 201 and the reflective layer 202 form a light-gathering structure for gathering light, and the reflective layer 202 has high reflectivity.
As an example, the material of the second structural layer 2 includes, but is not limited to, silicon, germanium, or other suitable semiconductor substrate, and in this embodiment, the second structural layer 2 is a silicon substrate as an example.
As an example, the light-gathering cavity 201 is formed in the second structural layer 2 by isotropic etching or anisotropic etching, and the reflective layer 202 is formed by magnetron sputtering, thermal evaporation, chemical vapor deposition or other suitable processes, wherein the reflective layer 202 includes but is not limited to at least one of a metal layer, a ceramic layer and a polyester layer.
As an example, the inner wall of the light-concentrating cavity 201 is parabolic; the focus of the paraboloid is the center of the micro-electromechanical infrared light source.
By way of example, the height of the concentrating cavity 201 may range from 0.5 to 10 mm. It should be noted that the light-gathering effect of the micro-electromechanical infrared light source is related to the height of the light-gathering cavity 201, that is, the thickness of the second structure layer 2 is higher within a certain range, and the light-gathering effect is better. In other embodiments, the height range of the light-gathering cavity 201 can be adjusted as required, and is not limited to 0.5-10 mm.
As an example, the second structural layer 2 may be formed on the basis of a second wafer, a portion of which serves as the second structural layer 2. And subsequent bonding adopts wafer-level bonding, and finally, a plurality of micro-electromechanical infrared light sources with light-gathering structures can be obtained by cutting the wafer-level bonding structure.
Referring to fig. 4, step S3 is executed: a third structural layer 3 is formed, which third structural layer 3 comprises a filter layer 301.
As an example, the material of the third structural layer 3 includes, but is not limited to, silicon or germanium, in this embodiment, the third structural layer 3 may include a silicon layer, and the filter layer 301 is prepared on the surface of the silicon layer by a thin film deposition technique, the filter layer 301 may be a single-layer film, and may also include a multi-layer film, wherein the multi-layer film may include films of the same material, and may also include films of different materials, which may be specifically adjusted according to the desired filtering wavelength range, and the protection scope of the present invention should not be limited too.
As an example, the filter layer 301 includes a band pass filter or a wide spectrum light transmitting sheet.
As an example, the third structural layer 3 may be formed on the basis of a third wafer, a portion of which serves as the second structural layer 2. And subsequent bonding adopts wafer-level bonding, and finally, a plurality of micro-electromechanical infrared light sources with light-gathering structures can be obtained by cutting the wafer-level bonding structure.
Referring to fig. 5, step S4 is executed: bonding through first tie layer 4 first structural layer 1 with second structural layer 2, bonding through second tie layer 5 second structural layer 2 with third structural layer 3, second structural layer 2 is located first structural layer 1 with between the third structural layer 3, vacuum cavity 104 the through-hole 105 reaches spotlight chamber 201 communicates in proper order, the bottom in spotlight chamber 201 exposes blackbody radiation layer 103, third structural layer 3 seals the open-top of spotlight chamber 201.
By way of example, the first bonding layer 4 includes, but is not limited to, BCB solder or gold-tin solder, and the second bonding layer 5 includes BCB solder or gold-tin solder.
For example, the first structural layer 1 may be bonded to the second structural layer 2 and then bonded to the third structural layer 3, or the second structural layer 2 may be bonded to the third structural layer 3 and then bonded to the first structural layer 1.
To this end, a complete micro-electromechanical infrared light source is formed, please refer to fig. 6 to 8, wherein fig. 6 shows a simulation result of the light condensing effect of a conventional bare infrared light source without a parabolic light condensing structure, fig. 7 shows a simulation result of the light condensing effect of an infrared light source of the present invention with a parabolic surface having a height of 0.5mm, and fig. 8 shows a simulation result of the light condensing effect of an infrared light source of the present invention with a parabolic surface having a height of 1mm, it can be seen that, for a conventional bare infrared light source without a parabolic light condensing structure, a light spot radius obtained at a position of 10mm of the light source is about 12mm, and the light source can generate divergence. For the infrared light source of the invention adopting the paraboloid with the height of 0.5mm, the radius of a light spot obtained at the position of 10mm of the light source is 4mm, and the light condensation effect is greatly improved. For the infrared light source of the invention adopting the paraboloid with the height of 0.1mm, the radius of a light spot obtained at the position of 10mm of the light source is 2.4mm, and the light condensation effect is greatly improved.
In the embodiment, the light-gathering structure is directly integrated and prepared on the chip, the preparation process is simple, the cost is low, the high consistency is achieved, the size of the micro-electromechanical infrared light source is reduced, the problem that the radiation angle of the traditional micro-electromechanical infrared light source is too large is solved, and meanwhile, the packaging airtightness is good.
In summary, the micro-electromechanical infrared light source with a light-gathering structure of the present invention includes a first structural layer, a second structural layer, and a third structural layer, wherein the light-gathering cavity and the reflective layer are directly fabricated in the second structural layer as the light-gathering structure, and the three structural layers are sequentially connected by bonding, wherein the first structural layer, the second structural layer, and the third structural layer can be directly fabricated based on a low-cost wafer, and different functional layers are respectively micro-machined on three different wafers, so as to achieve the purpose of optical coupling, and the bonding can be wafer-level bonding. Compared with the traditional polished aluminum alloy condenser lens scheme, the condensing structure is directly integrated on the chip and has the advantages of high integration level, low manufacturing cost, high consistency and good packaging air tightness. Meanwhile, the micro-electromechanical infrared light source device prepared by the preparation method has lower packaging cost and better infrared radiation effect. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (19)

1. A micro-electromechanical infrared light source with a light condensation structure is characterized by comprising:
the first structural layer sequentially comprises a substrate layer, a supporting layer and a black body radiation layer from bottom to top, wherein a vacuum cavity is arranged in the substrate layer, and a through hole communicated with the vacuum cavity is formed in the supporting layer;
the second structural layer is positioned above the first structural layer and is in bonding connection with the first structural layer through a first bonding layer, a light-gathering cavity is arranged in the second structural layer, the light-gathering cavity penetrates through the second structural layer in the vertical direction and is communicated with the through hole, the black body radiation layer is exposed at the bottom of the light-gathering cavity, and a reflection layer is arranged on the inner wall of the light-gathering cavity;
and the third structural layer is positioned above the second structural layer and is in bonding connection with the second structural layer through a second bonding layer, the third structural layer seals the top opening of the light-gathering cavity, and the third structural layer comprises a filter layer.
2. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the substrate layer is made of silicon or germanium; the material of the second structural layer comprises silicon or germanium; the third structural layer is made of silicon or germanium.
3. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the support layer comprises an insulating material.
4. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the blackbody radiation layer includes a nanostructure including a convex structure or a concave structure.
5. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 4, wherein: the blackbody radiation layer includes a silicon black layer.
6. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the first structural layer further comprises a metal pad, and the metal pad is located on the surface of the supporting layer and is spaced from the second structural layer by a preset distance.
7. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the inner wall of the light-gathering cavity is in a paraboloid shape.
8. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the reflective layer includes at least one of a metal layer, a ceramic layer, and a polyester layer.
9. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the height range of the light-gathering cavity is 0.01 mm-10 mm.
10. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the filter layer includes a thin film or a plurality of thin films.
11. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the filter layer comprises a band-pass filter or a wide-spectrum light-transmitting sheet.
12. The micro-electromechanical infrared light source with the light gathering structure as recited in claim 1, wherein: the first bonding layer includes BCB solder or gold-tin solder, and the second bonding layer includes BCB solder or gold-tin solder.
13. A preparation method of a micro-electromechanical infrared light source with a light-gathering structure is characterized by comprising the following steps:
forming a first structural layer, wherein the first structural layer sequentially comprises a substrate layer, a supporting layer and a black body radiation layer from bottom to top, a vacuum cavity is arranged in the substrate layer, and a through hole communicated with the vacuum cavity is formed in the supporting layer;
forming a second structural layer, wherein a light-gathering cavity is arranged in the second structural layer, the light-gathering cavity penetrates through the second structural layer in the vertical direction, and a reflecting layer is arranged on the inner wall of the light-gathering cavity;
forming a third structural layer comprising a filter layer;
the first structural layer is bonded with the second structural layer through the first bonding layer, the second structural layer is bonded with the third structural layer through the second bonding layer, the second structural layer is located between the first structural layer and the third structural layer, the vacuum cavity is formed by sequentially communicating the through holes and the light gathering cavity, the black body radiation layer is exposed at the bottom of the light gathering cavity, and the top opening of the light gathering cavity is sealed by the third structural layer.
14. The method for preparing a micro-electromechanical infrared light source with a light condensing structure according to claim 13, wherein the method comprises the following steps: forming the first structural layer based on a first wafer, forming the second structural layer based on a second wafer, and forming the third structural layer based on a third wafer, wherein the bonding is wafer-level bonding.
15. The method for preparing a micro-electromechanical infrared light source with a light condensing structure according to claim 13, wherein the method comprises the following steps: and forming the vacuum chamber in the substrate layer by adopting at least one of dry etching and wet etching.
16. The method for preparing a micro-electromechanical infrared light source with a light condensing structure of claim 15, wherein the method comprises the following steps: and introducing an etchant to the surface of the substrate layer through the through hole to obtain the vacuum chamber by etching.
17. The method for preparing a micro-electromechanical infrared light source with a light condensing structure according to claim 13, wherein the method comprises the following steps: and forming the light-gathering cavity in the second structural layer by adopting at least one of isotropic etching and anisotropic etching.
18. The method for preparing a micro-electromechanical infrared light source with a light condensing structure according to claim 13, wherein the method comprises the following steps: the preparation method of the reflecting layer comprises one of magnetron sputtering, thermal evaporation and chemical vapor deposition.
19. The method for preparing a micro-electromechanical infrared light source with a light condensing structure according to claim 13, wherein the method comprises the following steps: and bonding and connecting the first structural layer and the second structural layer, and then bonding and connecting the first structural layer and the second structural layer, or bonding and connecting the second structural layer and the third structural layer, and then bonding and connecting the second structural layer and the third structural layer with the first structural layer.
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