CN105004694A - Array type infrared light source device based on MEMS technology and manufacturing method thereof - Google Patents
Array type infrared light source device based on MEMS technology and manufacturing method thereof Download PDFInfo
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- CN105004694A CN105004694A CN201510289459.2A CN201510289459A CN105004694A CN 105004694 A CN105004694 A CN 105004694A CN 201510289459 A CN201510289459 A CN 201510289459A CN 105004694 A CN105004694 A CN 105004694A
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Abstract
The invention provides an array type infrared light source device based on the MEMS technology and a manufacturing method thereof. The infrared light source device comprises an infrared light emitting part and a focusing cover part. The infrared light emitting part comprises a first silicon-base wafer, an insulating layer formed on the upper surface of the first silicon-base wafer, a metal electrode formed on the insulating layer, a plurality of metal heating areas connected with the metal electrode and distributed in an array at intervals, first anchor points formed on the insulating layer around the metal heating areas, and a high-radiation-rate material deposited on the upper surfaces of the metal heating areas. The metal heating areas and the high-radiation-rate material form a plurality of infrared radiation sources together. A heat-insulation cavity located below the infrared radiation sources is formed on the first silicon-base wafer. The focusing cover part comprises a second silicon-base wafer and second anchor points on the lower surface of the second silicon-base wafer. A plurality of focusing holes corresponding to the infrared radiation sources in a one-to-one mode are formed in the second silicon-base wafer, and the first anchor points and the second anchor points are bonded.
Description
Technical field
The present invention is positioned at technical field of microelectronic mechanical systems, particularly relates to a kind of array infrared light supply device based on MEMS technology and preparation method thereof.
Background technology
NDIR (Non-Dispersive Infrared) (Non Dispersive Infrared, NDIR) gas analysis technology is very general in actual applications fast and accurately as one for gas sensor, the plurality of advantages such as have that reliability is high, selectivity good, precision is high, nontoxic, little interference by environment, life-span are long.
The ultimate principle of NDIR gas sensor is when infrared light is by gas to be measured, the infrared light of gas molecule to specific wavelength has absorption, it absorbs relation and obeys youth primary-Bill absorption law, namely light intensity exponentially decays with gas concentration and light path in gas medium, absorption coefficient depends on gas characteristic, and conventional computing formula is: I=I
0* exp (-μ cL), wherein, I is the infrared light intensity arriving detector when having gas absorption, I
0for not having light intensity during gas absorption, C is gas concentration in chamber, and L is chamber length or infrared light light path, and μ is the absorption coefficient of gas.Generally speaking, in order to improve detection sensitivity, needing increase optical filter, making the monochromatic light of corresponding gas absorption maximum coefficient to be measured arrive detector.
For the to be measured gas of absorbing wavelength at below 4um, what traditional infrared light supply adopted is bulb.Due to glass shell only the ending for more than 4um of bulb, therefore when needing to detect the gas of absorbing wavelength at more than 4um, this light source just cannot be competent at.The wide spectrum light source (pointing out to penetrate optical wavelength between 2um ~ 25um) of current main flow all adopts heater strip to heat the principle of high radiant rate material, wherein, utilize MEMS(Micro-Electro-Mechanical System, MEMS (micro electro mechanical system)) infrared light supply based on micro-heater prepared of technology has the many merits that volume is little, modulating frequency is high, cost is low, consistance is high, commercially also has multiple matured product.But, because the radiation areas size of these MEMS light sources existing is all at more than 1.5mm*1.5mm, in order to outgoing quasi-parallel light, often need to install a snoot additional, height at 5mm ~ 15mm, diameter at 5mm ~ 10mm, considerably increase the volume of device, be unfavorable for the integrated of NDIR system and miniaturization.On the other hand, technical at infrared projection, occur utilizing infrared radiation tuple to be the projection that array realizes various infrared image, but the target of this technology pursue is the densification of radiation element, to the radiation intensity not too large requirement of radiation element, and whole system is very huge, only there is fraction purposes in military field, cannot the field of gas detection such as NDIR be applied in.
Therefore, be necessary to be improved to solve the problem to existing array infrared light supply device based on MEMS technology and preparation method thereof.
Summary of the invention
The object of the present invention is to provide a kind of small volume, facilitate integrated array infrared light supply device based on MEMS technology and preparation method thereof.
For achieving the above object, the invention provides a kind of array infrared light supply device based on MEMS technology, it comprises the infraluminescence part and snoot part that are mutually bonded together, described infraluminescence part comprises the first silicon-based wafer, be formed in the insulation course of the first silicon-based wafer upper surface, formed metal electrode on the insulating layer and be connected with metal electrode several be array METAL HEATING PROCESS district spaced apart, be formed in the first anchor point on the insulation course around METAL HEATING PROCESS district and the high radiant rate material being deposited on some described METAL HEATING PROCESS districts upper surface, described METAL HEATING PROCESS district and high radiant rate material form several infrared origin jointly, described first silicon-based wafer is formed with the heat insultating cavity be positioned at below infrared origin, described snoot part comprises the second silicon-based wafer and is arranged on second anchor point of lower surface of the second silicon-based wafer, described second silicon-based wafer is formed with the convergent hole that some and described infrared origin one_to_one corresponding is arranged, described first anchor point and the mutual bonding of the second anchor point.
As a further improvement on the present invention, the internal face of described convergent hole is curved.
As a further improvement on the present invention, the axial cross section of described convergent hole is inverted trapezoidal.
For achieving the above object, present invention also offers a kind of preparation method of the array infrared light supply device based on MEMS technology, it comprise and prepares infraluminescence part, prepare snoot part and by infraluminescence part and snoot moiety to together with; Wherein, prepare infraluminescence part and comprise the following steps: S11, a silicon-based wafer is provided; S12, makes certain thickness insulation course at described silicon-based wafer upper surface; S13, surface makes metal electrode and METAL HEATING PROCESS district on the insulating layer, and described METAL HEATING PROCESS district is provided with several on the insulating layer on the surface and is that array is spaced apart; S14, makes the first anchor point being used for bonding on the insulating layer; S15, the insulation course not being coated with metal electrode and METAL HEATING PROCESS district around METAL HEATING PROCESS district forms window through etching or corrosion; S16, in some described METAL HEATING PROCESS districts, upper surface deposits high radiant rate material respectively, to form several infrared origin; S17, the window place formed at S14 step place adopts wet etching or dry etching the silicon-based wafer part be positioned at below infrared origin to be removed, and forms heat insultating cavity, thus forms the infraluminescence part with some infrared origin in array distribution; Prepare snoot part to comprise the following steps: S21, another silicon-based wafer is provided, and make in order to the second anchor point with infraluminescence part phase bonding at the lower surface of this another silicon-based wafer; S22, this another silicon-based wafer makes some through holes wide at the top and narrow at the bottom, and on through-hole wall, form the metal level with high reflectance, makes through hole be formed as convergent hole; Finally, the first anchor point and the second anchor point is adopted mutually to be bonded together infraluminescence part and snoot part, described convergent hole and described infrared origin one_to_one corresponding.
As a further improvement on the present invention, the metal electrode in described S13 step and METAL HEATING PROCESS district adopt commaterial be made and be interconnected.
As a further improvement on the present invention, described S13 step specifically comprises: first adopt the method for physical vapour deposition (PVD) to make certain thickness platinum metal layer at described insulation course upper surface, and then adopt stripping method or dry etching mode by described platinum metal layer graphically, to form described metal electrode and METAL HEATING PROCESS district.
As a further improvement on the present invention, one deck adhesion layer is also manufactured with between described platinum metal layer and insulation course.
As a further improvement on the present invention, described first anchor point and the second anchor point are made up of one or more in copper, tin, gold, indium.
As a further improvement on the present invention, the through hole in described S22 step adopts the method for isotropic etching to be formed, and makes the internal face of described through hole curved.
As a further improvement on the present invention, the through hole in described S22 step adopts the method formation carrying out dark silicon etching from the lower surface of another silicon-based wafer aforementioned, and the axial cross section making the through hole formed is inverted trapezoidal.
The invention has the beneficial effects as follows: compared with existing infrared light supply, because infrared origin is array distribution in the present invention, the area of each infrared origin is reduced greatly, therefore the snoot size for optically focused also can scaled down, and then superposed by array, total radiation intensity can remain unchanged, but the cumulative volume comprising the infrared light supply device of infrared origin and snoot reduces greatly, be about to the infraluminescence part of the infrared origin with array distribution, snoot is partially integrated in a chip, in effective solution prior art, packaging cost is high, the problem that device volume is large, significant for the integrated of NDIR system and miniaturization.
Accompanying drawing explanation
Fig. 1 a to Fig. 1 k is the partial structurtes manufacturing process schematic diagram of the array infrared light supply device that the present invention is based on MEMS technology;
Fig. 2 is the partial perspective view of the partial structurtes of the infraluminescence part of array type infrared light supply device in Fig. 1;
Fig. 3 is the stereographic map of the infraluminescence part of array type infrared light supply device of the present invention;
Fig. 4 is the part-structure stereographic map of array type infrared light supply device of the present invention;
Fig. 5 is the partial structurtes cut-open view of another preferred embodiment of snoot part in array type infrared light supply device of the present invention.
Embodiment
Describe the present invention below with reference to each embodiment shown in the drawings.But these embodiments do not limit the present invention, the structure that those of ordinary skill in the art makes according to these embodiments, method or conversion functionally are all included in protection scope of the present invention.
Please refer to Fig. 1 k, Fig. 2 to the preferred embodiment that Figure 4 shows that the array infrared light supply device that the present invention is based on MEMS technology.Described array infrared light supply device comprises the infraluminescence part 100, snoot part 200 and the filter portion 300 that are mutually bonded together.
Wherein, described infraluminescence part 100 comprise the first silicon-based wafer 101, be formed in the insulation course 102 of the first silicon-based wafer 101 upper surface, be formed in the metal electrode 103 on insulation course 102 and be connected with metal electrode 103 several be array METAL HEATING PROCESS district 104 spaced apart, be formed in around METAL HEATING PROCESS district 104 insulation course 102 on the first anchor point 105 and be deposited on the high radiant rate material 107 of some described METAL HEATING PROCESS districts 104 upper surface.Described METAL HEATING PROCESS district 104 and high radiant rate material 107 form several infrared origin jointly.As can be seen from Figure 3, infrared origin described in present embodiment is that parallel connected array in 5*5 is arranged.Described first silicon-based wafer 101 is formed with the heat insultating cavity 108 be positioned at below infrared origin.
Described snoot part 200 comprises the second silicon-based wafer 201 and is arranged on second anchor point 205 of lower surface of the second silicon-based wafer 201.Described second silicon-based wafer 201 is formed with the convergent hole 202 that some and described infrared origin one_to_one corresponding is arranged.Described convergent hole 202 comprises through etching the through hole be formed on the second silicon-based wafer 201 and the metal level being arranged on the high reflectance on through-hole wall face.
Described first anchor point 105 and the second anchor point 205 bonding mutually, interconnects to make described infraluminescence part 100 and snoot part 200; Wherein, described convergent hole 202 and infrared origin one_to_one corresponding are arranged.The side that described filter portion 300 also adopts the method bonding of wafer scale bonding to be arranged on described second silicon-based wafer 201 to deviate from described infraluminescence part 100, to realize filtering and defencive function.
Please refer to the partial structurtes manufacturing process schematic diagram that Fig. 1 a to Fig. 1 k is depicted as the array infrared light supply device that the present invention is based on MEMS technology, only the forming process of an infrared origin is carried out schematic presentation in these diagrams, in fact as shown in Figure 3, infrared light supply device of the present invention is made up of several this kind of partial structurtes.As can be seen from these diagrams, the preparation method that the present invention is based on the array infrared light supply device of MEMS technology at least includes and prepares preparing together with infraluminescence part 100 being bonded to snoot part 200 shown in snoot part 200 and Fig. 1 j shown in infraluminescence part 100, Fig. 1 h to Fig. 1 i shown in Fig. 1 a to Fig. 1 g.
Wherein, please refer to Fig. 1 a to Fig. 1 g and shown in composition graphs 2 and Fig. 3, prepare described infraluminescence part 100 and comprise following S11 to S17 step.
S11, please refer to shown in Fig. 1 a, provides a silicon-based wafer, and described silicon-based wafer is (100) type silicon-based wafer, is aforementioned first silicon-based wafer 101.
S12, please refer to shown in Fig. 1 b, make certain thickness insulation course 102 at described first silicon-based wafer 101 upper surface, described insulation course 102 is the certain thickness silicon nitride film adopting the mode of chemical meteorology deposition to make, to use as insulation and support film.
S13, please refer to Fig. 1 c and shown in composition graphs 2 and Fig. 3, metal electrode 103 and METAL HEATING PROCESS district 104 is made at insulation course 102 upper surface, composition graphs 3 can be found out, described METAL HEATING PROCESS district 104 is provided with several and is that array is spaced apart on insulation course 102 upper surface, described metal electrode 103 is set to some groups that are connected respectively with METAL HEATING PROCESS district 104, and metal electrode 103 described in some groups carries out interconnected setting according to the demand for control in METAL HEATING PROCESS district 104; In the present embodiment, described metal electrode 103 and METAL HEATING PROCESS district 104 adopt commaterial to be made; Thus, this step specifically comprises: first adopt the method for physical vapour deposition (PVD) to make certain thickness platinum metal layer at described insulation course 102 upper surface, and then by adopting stripping method or dry etching mode by described platinum metal layer graphically, to form described metal electrode 103 and METAL HEATING PROCESS district 104.In addition, for increasing the adhesion of platinum metal layer, can also also make one deck adhesion layer between described platinum metal layer and insulation course 102, this adhesion layer can be made with the metal such as chromium, titanium.
S14, please refer to shown in Fig. 1 d and Fig. 2, and insulation course 102 makes the first anchor point 105 being used for bonding, and described first anchor point 105 is distributed in the surrounding in METAL HEATING PROCESS district 104.
S15, please refer to shown in Fig. 1 e, and the insulation course 102 not being coated with metal electrode 103 and METAL HEATING PROCESS district 104 around METAL HEATING PROCESS district 104 forms through etching or corrosion the window 106 that the corrosion of follow-up silicon or etching use.
S16, please refer to shown in Fig. 1 f and Fig. 2, and in some described METAL HEATING PROCESS districts 104, upper surface deposits high radiant rate material 107 respectively, to form several infrared origin.
S17, please refer to shown in Fig. 1 g, Fig. 2 and Fig. 3, wet etching or dry etching is adopted to be removed by part first silicon-based wafer 101 be positioned at below infrared origin at window 106 place that S14 step is formed, make infrared origin unsettled, thus form heat insultating cavity 108, and then form the infraluminescence part with some infrared origin in array distribution.
Above-mentioned S15 step also can be carried out after S16 step.
Please refer to shown in Fig. 1 h to Fig. 1 i, prepare snoot part 200 and comprise the following steps:
S21, please refer to shown in Fig. 1 h, provides another silicon-based wafer, i.e. described second silicon-based wafer 201, and makes in order to the second anchor point 205 with infraluminescence part phase bonding at the lower surface of this second silicon-based wafer 201;
S22, please refer to shown in Fig. 1 i, and this second silicon-based wafer 201 makes some through holes wide at the top and narrow at the bottom, and adopts the method for magnetron sputtering on through-hole wall, form the metal level with high reflectance, makes through hole be formed as having the convergent hole 202 of optically focused effect.
In the present embodiment, the through hole in described S22 step makes and specifically comprises:
First, the method for dark silicon etching is adopted to make comparatively vertical through hole on the second silicon-based wafer 201 surface;
Then, the isotropic etching of silicon is carried out again from the upper surface of the second silicon-based wafer 201, such as reactive ion etching, HNA isotropic etch, XeF2 isotropic etching etc., utilize the principle of top CHEMICAL TRANSPORT faster than the bottom in hole in hole, make the internal face of described through hole curved.
Certainly, please refer to shown in Fig. 5, as another embodiment of the present invention, the through hole in described S22 step also can adopt following steps to make:
The method of dark silicon etching is directly adopted to carve described through hole from the lower surface of described second silicon-based wafer 201, but, the time regulating passivation and etching is needed in etching process, relative to standard etch program, need to reduce passivation time, increase etching time, thus obtain the larger etching through hole in inclination angle, the feature of this through hole is up-narrow and down-wide relative to etching direction, because the etching in the present embodiment carries out etching from the lower surface of the second silicon-based wafer 201, therefore the described through hole obtained is wide at the top and narrow at the bottom, and the axial cross section of through hole is inverted trapezoidal.
Please refer to shown in Fig. 1 j and Fig. 3, after infraluminescence part 100 and snoot part 200 complete, adopt the first anchor point 105 and the second anchor point 205 to be mutually bonded together infraluminescence part 100 and snoot part 200, make described convergent hole 202 and described infrared origin one_to_one corresponding.Wherein, described first anchor point 105 and the second anchor point 205 are made up of one or more in the metals such as copper, tin, gold, indium.In the present embodiment, described first anchor point 105 is made up of copper metal, and described second anchor point 205 is for be made up of tin metal.
In addition, please refer to shown in Fig. 1 k, the method bonding one that the preparation method of array infrared light supply device of the present invention is also included in the upper surface wafer scale bonding of described second silicon-based wafer 201 has the optical filter 300 of optical filtering and defencive function.
Finally, the infraluminescence part 100 be bonded together, snoot part 200 and optical filter 300 are cut, form multiple infrared light supply device respectively with the infrared origin of several array distribution.In present embodiment, as shown in Figure 4, infrared origin is the array distribution of 5*5 to the infrared light supply device after cutting, and described metal electrode 103 comprises the external electrode 112 being formed in infraluminescence part 100 lateral margin place, to connect external circuit (not shown).
In sum, because infrared origin is array distribution in array infrared light supply device shaping in the present invention, the area of each infrared origin is reduced greatly, therefore the snoot size for optically focused also can scaled down, and then superposed by array, total radiation intensity can remain unchanged, but the cumulative volume comprising the infrared light supply device of infrared origin and snoot reduces greatly, be about to the infraluminescence part 100 of the infrared origin with array distribution, snoot part 200 is integrated in a chip, in effective solution prior art, packaging cost is high, the problem that device volume is large, significant for the integrated of NDIR system and miniaturization.
Be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should by instructions integrally, technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility embodiment of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.
Claims (10)
1. the array infrared light supply device based on MEMS technology, it is characterized in that, described array type infrared light supply device comprises the infraluminescence part and snoot part that are mutually bonded together, described infraluminescence part comprises the first silicon-based wafer, be formed in the insulation course of the first silicon-based wafer upper surface, formed metal electrode on the insulating layer and be connected with metal electrode several be array METAL HEATING PROCESS district spaced apart, be formed in the first anchor point on the insulation course around METAL HEATING PROCESS district and the high radiant rate material being deposited on some described METAL HEATING PROCESS districts upper surface, described METAL HEATING PROCESS district and high radiant rate material form several infrared origin jointly, described first silicon-based wafer is formed with the heat insultating cavity be positioned at below infrared origin, described snoot part comprises the second silicon-based wafer and is arranged on second anchor point of lower surface of the second silicon-based wafer, described second silicon-based wafer is formed with the convergent hole that some and described infrared origin one_to_one corresponding is arranged, described first anchor point and the mutual bonding of the second anchor point.
2. the array infrared light supply device based on MEMS technology according to claim 1, is characterized in that: the internal face of described convergent hole is curved.
3. the array infrared light supply device based on MEMS technology according to claim 1, is characterized in that: the axial cross section of described convergent hole is inverted trapezoidal.
4. based on a preparation method for the array infrared light supply device of MEMS technology, it is characterized in that, described preparation method comprise and prepares infraluminescence part, prepare snoot part and by infraluminescence part and snoot moiety to together with;
Wherein, prepare infraluminescence part to comprise the following steps:
S11, provides a silicon-based wafer;
S12, makes certain thickness insulation course at described silicon-based wafer upper surface;
S13, surface makes metal electrode and METAL HEATING PROCESS district on the insulating layer, and described METAL HEATING PROCESS district is provided with several on the insulating layer on the surface and is that array is spaced apart;
S14, makes the first anchor point being used for bonding on the insulating layer;
S15, the insulation course not being coated with metal electrode and METAL HEATING PROCESS district around METAL HEATING PROCESS district forms window through etching or corrosion;
S16, in some described METAL HEATING PROCESS districts, upper surface deposits high radiant rate material respectively, to form several infrared origin;
S17, the window place formed at S14 step place adopts wet etching or dry etching the silicon-based wafer part be positioned at below infrared origin to be removed, and forms heat insultating cavity, thus forms the infraluminescence part with some infrared origin in array distribution;
Prepare snoot part to comprise the following steps:
S21, provides another silicon-based wafer, and makes in order to the second anchor point with infraluminescence part phase bonding at the lower surface of this another silicon-based wafer;
S22, this another silicon-based wafer makes some through holes wide at the top and narrow at the bottom, and on through-hole wall, form the metal level with high reflectance, makes through hole be formed as convergent hole;
Finally, the first anchor point and the second anchor point is adopted mutually to be bonded together infraluminescence part and snoot part, described convergent hole and described infrared origin one_to_one corresponding.
5. the preparation method of the array infrared light supply device based on MEMS technology according to claim 4, is characterized in that: the metal electrode in described S13 step and METAL HEATING PROCESS district adopt commaterial be made and be interconnected.
6. the preparation method of the array infrared light supply device based on MEMS technology according to claim 5, it is characterized in that: described S13 step specifically comprises: first adopt the method for physical vapour deposition (PVD) to make certain thickness platinum metal layer at described insulation course upper surface, and then adopt stripping method or dry etching mode by described platinum metal layer graphically, to form described metal electrode and METAL HEATING PROCESS district.
7. the preparation method of the array infrared light supply device based on MEMS technology according to claim 6, is characterized in that: be also manufactured with one deck adhesion layer between described platinum metal layer and insulation course.
8. the preparation method of the array infrared light supply device based on MEMS technology according to claim 4, is characterized in that: described first anchor point and the second anchor point are made up of one or more in copper, tin, gold, indium.
9. the preparation method of the array infrared light supply device based on MEMS technology according to claim 4, is characterized in that: the through hole in described S22 step adopts the method for isotropic etching to be formed, and makes the internal face of described through hole curved.
10. the preparation method of the array infrared light supply device based on MEMS technology according to claim 4, it is characterized in that: the through hole in described S22 step adopts the method formation carrying out dark silicon etching from the lower surface of another silicon-based wafer aforementioned, and the axial cross section making the through hole formed is inverted trapezoidal.
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| CN105668504A (en) * | 2016-03-15 | 2016-06-15 | 苏州诺联芯电子科技有限公司 | Infrared light source and manufacturing method thereof |
| CN105668504B (en) * | 2016-03-15 | 2017-12-19 | 苏州诺联芯电子科技有限公司 | Infrared light supply and preparation method thereof |
| CN107063471A (en) * | 2017-05-12 | 2017-08-18 | 凯迈（洛阳）测控有限公司 | Individual soldier based on MEMS infrared light supplies recognizes the helmet with radio recognition equipment, enemy and we |
| CN112794280A (en) * | 2020-12-31 | 2021-05-14 | 厦门烨映电子科技有限公司 | Micro-electro-mechanical infrared light source with light-gathering structure and preparation method thereof |
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