CN105668504B - Infrared light supply and preparation method thereof - Google Patents
Infrared light supply and preparation method thereof Download PDFInfo
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- CN105668504B CN105668504B CN201610147156.1A CN201610147156A CN105668504B CN 105668504 B CN105668504 B CN 105668504B CN 201610147156 A CN201610147156 A CN 201610147156A CN 105668504 B CN105668504 B CN 105668504B
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- 239000012528 membrane Substances 0.000 claims abstract description 43
- 239000011159 matrix material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 31
- 238000005538 encapsulation Methods 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 10
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- 239000000377 silicon dioxide Substances 0.000 claims description 10
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- 238000005530 etching Methods 0.000 claims description 9
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- 239000013078 crystal Substances 0.000 claims description 6
- 239000006229 carbon black Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/0087—On-device systems and sensors for controlling, regulating or monitoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a kind of preparation method of infrared light supply, comprise the following steps：S1：Substrate is provided, and support membrane is made in the upper surface of the substrate；S2：Temperature sensor, the lead point that the temperature sensor has to communicate to connect with external circuit are made in the upper surface of the support membrane；S3：Insulating barrier is made in the top of the temperature sensor；S4：Heating source, the wiring point that the heating source has to be electrically connected with external circuit are made in the upper surface of the insulating barrier；S5：Black matrix film is made in the top of the heating source as radiating layer；S6：The lead point is set outwards to be exposed with the part-structure of the wiring point to be connected with external circuit.The temperature sensor is arranged at the radiation areas of infrared light supply by the preparation method of the infrared light supply, is capable of the radiation temperature of Real-time Feedback infrared light supply, can effectively improve the detection accuracy and resolution ratio of NDIR modules, has application prospect in NDIR gas sensings field.
Description
Technical field
The present invention relates to a kind of infrared light supply, more particularly to a kind of MEMS infrared light supplies and its system with temperature feedback function
Make method.
Background technology
Infrared light supply is widely used in NDIR（NDIR）In gas sensor module, by heating electrode pair black matrix
Radiating layer is heated, and it is launched wide spectrum heat radiation infrared light, and the red of specific wavelength is emitted after infrared filter filters
Outer light, by being decayed during under test gas by absorption, according to Beer-Lambert law：Before specific damping
Light intensity afterwards calculates the concentration of under test gas.Wherein, I be when having gas absorption reach detector infrared light intensity, I0Not have
Reaching the infrared light intensity of detector when having a gas absorption, C is the gas concentration in chamber, and L is chamber length or infrared light light path,
μ is the absorption coefficient of gas.
Because infrared spectrum caused by black body radiation depends on radiation temperature, therefore the temperature change of infrared light supply is to NDIR
The measurement result of sensor has a significant impact.As a hot related device, the temperature change of infrared light supply is mainly derived from defeated
Enter power swing and external cooling environmental change.Wherein, power swing factor is usually real by circuit realiration in NDIR modules
When monitor.External cooling environmental change mostlys come from mechanical structure heat transfer, the ring being connected in NDIR modules with infrared light supply
Border temperature change, air velocity change etc..NDIR modules are universal at present only places TEMP at the detector end away from light source
Device, when light-source temperature changes, it is longer that corresponding heat balance time is established at detector end, if light-source temperature persistently becomes
Change, the temperature sensor at detector end will have a hysteresis effect all the time, and cause the baseline of sensor measurement to float
Move, influence the stability and precision of detection.
Current infrared light supply device often only heats lighting function, such as incandescent lamp, Halogen lamp LED, nichrome mercerising
Source, globar light source, MEMS infrared light supplies etc., it is measured if temperature sensor is only mounted near light source device
There can be the problems such as response lag, non-linear between temperature change and the temperature change of wick, therefore, to realize to light source luminescent shape
The real-time monitoring of state, it is necessary on the most crucial wick of light source integrated temperature sensor.
In view of this, it is necessary to a kind of improved infrared light supply and preparation method thereof is provided, to solve the above problems.
The content of the invention
It is an object of the invention to provide a kind of MEMS infrared light supplies with temperature feedback function and preparation method thereof.
For achieving the above object, the invention provides a kind of preparation method of infrared light supply, comprise the following steps：
S1：Substrate is provided, and support membrane is made in the upper surface of the substrate；S2：Temperature is made in the upper surface of the support membrane to pass
Sensor, the lead point that the temperature sensor has to communicate to connect with external circuit；S3：In the top of the temperature sensor
Make insulating barrier；S4：Heating source is made in the upper surface of the insulating barrier, the heating source has electrically to connect with external circuit
The wiring point connect, the serpentine-like upper surface for being uniformly distributed in the insulating barrier of the heating source；S5：In the top of the heating source
Black matrix film is made as radiating layer；S6：Make the part-structure of the lead point and the wiring point outwards exposure with dispatch from foreign news agency
Road connects.
As a further improvement on the present invention, the preparation method of the infrared light supply also includes being located at the step after step S1
Rapid S7：Deep trouth is etched upwards in the middle part of the lower surface of the substrate to form cavity.
As a further improvement on the present invention, S6 steps are specially：Etching window forms lead above the lead point
Passage, make the lead point upwardly exposed away from the side of the substrate.
As a further improvement on the present invention, the substrate is（100）The monocrystalline silicon piece of crystal orientation, the support membrane are use
The SiN of LPCVD depositionsxFilm, the SiO of thermal oxidation method growth2The combination of one or both of film.
As a further improvement on the present invention, S2 steps are specially：Made in the upper surface of the support membrane patterned
First metallic film has two lead points for being distributed in both ends as temperature sensor, the temperature sensor.
As a further improvement on the present invention, first metallic film selects RTD or nichrome resistance, S2 steps
Suddenly also include：Before making first metallic film, first adhesion layer is made on the support membrane.
As a further improvement on the present invention, the insulating barrier is to be deposited above the temperature sensor using PECVD
SiNxFilm, SiO2The combination of one or both of film.
As a further improvement on the present invention, S4 steps are specially：Made in the upper surface of the insulating barrier patterned
Second metallic film is as heating source, and the heating source has two wiring points, and two wiring points are respectively positioned at described
The both sides of temperature sensor；Projection of the heating source with the lead point from up to down over the substrate be not overlapping.
As a further improvement on the present invention, second metallic film selects RTD or nichrome resistance, S4 steps
Suddenly also include：Before making second metallic film, first adhesion layer is made on the insulating barrier.
As a further improvement on the present invention, the preparation method of the black matrix film is specially：Pass through vapour deposition or electricity
It is thin that the method for plating is produced on golden black film of the average emitted rate more than 0.8, platinum black under 2 μm ~ 5 mum wavelengths above the heating source
One or more in film or carbon black film.
As a further improvement on the present invention, the preparation method of the infrared light supply also includes encapsulation step：There is provided one
Encapsulation tube support, have on the encapsulation tube support pad that is connected with the wiring point and lead point and with each pad
The pin of connection；The quantity of the pad is identical with the summation of the lead point and the wiring point quantity；By the infrared light
Source chip is fixed on the encapsulation tube support, and the wiring point, lead point are respectively connecting on the different pads.
For achieving the above object, the present invention also provides a kind of preparation method making of the infrared light supply described in use
Infrared light supply infrared light supply.
The beneficial effects of the invention are as follows：The temperature sensor is arranged at red by the preparation method of the infrared light supply of the present invention
The radiation areas of outer light source, it is capable of the radiation temperature of Real-time Feedback infrared light supply, solving current NDIR modules can not monitor in real time
Infrared light supply temperature drift, the shortcomings that so as to cause measurement result zero point to be drifted about, the detection of NDIR modules can be effectively improved
Precision and resolution ratio, there is application prospect in NDIR gas sensings field.
Brief description of the drawings
Fig. 1 is the structural representation of the substrate of the infrared light supply of the present invention, wherein（a）For side view；（b）For top view.
Fig. 2 is that the structural representation after support membrane, lower surface making mask layer is made in the upper surface of the substrate shown in Fig. 1
Figure；Wherein（a）For side view；（b）For top view.
Fig. 3 is the structural representation after making temperature sensor in the upper surface of the support membrane shown in Fig. 2；Wherein（a）For
Side view；（b）For top view.
Fig. 4 is the structural representation after making insulating barrier in the top of the temperature sensor shown in Fig. 3；Wherein（a）For side
View；（b）For top view.
Fig. 5 is the structural representation after making heating source in the upper surface of the insulating barrier shown in Fig. 4；Wherein（a）For side view
Figure；（b）For top view.
Fig. 6 is the structural representation that the insulating barrier above lead point is removed on the basis of shown in Fig. 5；Wherein（a）For side
View；（b）For top view.
Fig. 7 is to set the structural representation after window on the mask layer on the basis of Fig. 6；Wherein（a）For side view；
（b）For top view；（c）For upward view.
Fig. 8 is the structural representation after making black matrix film in the top of the heating source on the basis of Fig. 7；Wherein（a）
For side view；（b）For top view；（c）For upward view.
Fig. 9 is the structural representation after making cavity on the basis of Fig. 8；Wherein（a）For side view；（b）For top view；
（c）For upward view.
Figure 10 is the structural representation that the infrared light supply chip shown in Fig. 9 is fixed on encapsulation tube support.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with the accompanying drawings with specific embodiment pair
The present invention is described in detail.
In the description of the invention, it is to be understood that the orientation or position relationship of the instruction such as term " on " " under " are base
Upper and lower orientation or position relationship shown in side view in accompanying drawing, it is only for it is easy to describe the utility model and simplify to describe,
Rather than instruction or imply signified device or element must have specific orientation, with specific azimuth configuration and operation, because
This is not considered as limiting the invention.
As shown in Fig. 1 ~ Figure 10, the preparation method of infrared light supply of the invention, comprise the following steps：S1：One piece of list is provided
Crystal silicon chip makes support membrane 2 in the upper surface of the substrate 1 and is used as structural support as structured substrate 1；S2：In the branch
The upper surface for supportting film 2 makes temperature sensor 3, the lead point that the temperature sensor 3 has to communicate to connect with external circuit
31；S3：Insulating barrier 4 is made in the top of the temperature sensor 3；S4：Heating source 5 is made in the upper surface of the insulating barrier 4,
The wiring point 51 that the heating source 5 has to be electrically connected with external circuit；S5：Black matrix is made in the top of the heating source 5
Film 6 is used as radiating layer；S6：The part-structure of the lead point 31 and the wiring point 51 is set outwards to expose to connect with external circuit
Connect.
In the preparation method of the infrared light supply, S1 ~ S6 numbering convenience for illustration only, the priority of step is not represented
Sequentially.Specific steps order be：S1 ~ S5 sequencing is constant, but between the adjacent step of any two in S1 ~ S5
Insert other steps；And step S6 can be before and after the arbitrary steps after step S2 according to specific manufacture craft, i.e. S6 can position
Between S2 and S3, S6 may be alternatively located between S3 and S4, and S6 may be additionally located between S4 and S5.
The preparation method of above-mentioned infrared light supply, the temperature sensor 3 is arranged to the radiation areas of infrared light supply, can
The radiation temperature of Real-time Feedback infrared light supply, infrared light supply temperature drift can not be monitored in real time by solving current NDIR modules, so as to
The shortcomings that causing measurement result zero point to be drifted about, the detection accuracy and resolution ratio of NDIR modules can be effectively improved, in NDIR gas
Body sensory field has application prospect.
Further, the preparation method of infrared light supply also includes being located at the step S7 after step S1：In the substrate 1
The middle part of lower surface etches deep trouth to form cavity upwards；Complete the making of infrared light supply chip.So-called step S7 is located at
After step S1, it can be understood as：Step S7 is located at before and after the arbitrary steps after step S1.It is described specifically, step S7 bags
Include two kinds of situations：One is deep trouth is etched in the middle part of the lower surface of the substrate 1 to the support membrane 2, to cause not
The peripheral part for the substrate 1 being etched away forms cavity with the support membrane 2.The second is in the lower surface of the substrate 1
Between position etching deep trouth not to the support membrane 2, to form cavity open down in the substrate 1 not being etched away.
Specifically, the monocrystalline silicon piece in S1 steps uses（100）The silicon chip of crystal orientation, the support membrane 2 are use
SiN prepared by the methods of LPCVD is depositedxFilm, the SiO of thermal oxidation method growth2The combination of one or both of film.Yu Ben
In embodiment, the support membrane 2 is the SiN of 500 nanometer thicknessxFilm.
S2 steps are specially：Patterned thickness is made in the upper surface of the support membrane 2 between 50nm ~ 500nm
The first metallic film as temperature sensor 3；The temperature sensor 3 has two lead points 31 for being distributed in both ends.Enter
One step, first metallic film selects RTD or nichrome resistance, first metallic film and the support membrane 2
Between also need to add adhesion layer, to strengthen the bond properties of first metallic film and the support membrane 2.
In the present embodiment, the temperature sensor 3 is located at the centre of the support membrane 2 and is in linear, has symmetrical point
It is distributed in two lead points 31 at lines both ends；Concrete operations can use indirect method：One layer first is first made on the support membrane 2
The metallic film of metallic film or adhesion layer/first, then the metallic film of metallic film or adhesion layer/first is performed etching to form figure
First metallic film of shape.In addition, the patterned temperature sensor 3 can also use direct method, that is, pass through mask plate
One layer of first metallic film is made on the support membrane 2, then removes mask plate；Or directly formed by modes such as printings
Patterned first metallic film.
Insulating barrier 4 in S3 steps is the SiN deposited using PECVDxFilm, SiO2The group of one or both of film
Close, the thickness of the insulating barrier 4 is between 300nm ~ 3000nm.The insulating barrier 4 is translucent or transparent film, therefore
It can see the temperature sensor 3 through the insulating barrier 4 in top view.
S4 steps are specially：Second gold medal of the thickness between 50nm ~ 500nm is made in the upper surface of the insulating barrier 4
Belong to film as heating source 5, the heating source 5 has two wiring points 51, and two wiring points 51 are respectively positioned at described
The both sides of temperature sensor 3；Projection of the heating source 5 with the lead point 31 from up to down on the substrate 1 be not overlapping；
So that the lead point 31 can be outwards exposed to be connected with external circuit away from the side of the substrate 1.Further, institute
State the second metallic film and select RTD or nichrome resistance, also needed between second metallic film and the support membrane 2
Adhesion layer is added, to strengthen the bond properties of second metallic film and the support membrane 2.
In the present embodiment, the serpentine-like upper surface for being uniformly distributed in the insulating barrier 4 of the heating source 5, and the heating
Projection of the source 5 with the lead point 31 from up to down on the substrate 1 be not overlapping.In addition, the heating source 5 has symmetrical point
Two wiring points 51 of cloth, and two wiring points 51 are located at the both sides of the temperature sensor 3 respectively.Concrete operations can adopt
Use indirect method：The metallic film of one layer of second metallic film or adhesion layer/second is made in the upper surface of the insulating barrier 4, then it is right
The metallic film of metallic film or adhesion layer/second performs etching to form patterned second metallic film.In addition, patterned institute
Direct method can also be used by stating heating source 5, i.e., one layer of second metallic film is made on the insulating barrier 4 by mask plate, then
Remove mask plate；Or patterned second metallic film is directly formed by modes such as printings.
S5 steps are specially：Black matrix film is made in the top of the heating source 5 by vapour deposition or electric plating method
6, the black matrix film 6 is golden black film of the average emitted rate more than 0.8, platinum black film, carbon black film under 2 μm ~ 5 mum wavelengths
Deng.In order to make full use of heat caused by the heating source 5, the area of the black matrix film 6 covers institute as much as possible
State the part that heating source 5 removes wiring point 51.In the present embodiment, the black matrix film 6 is covered in the heating source 5 and removes wiring
On the part of point 51, and the shape of the black matrix film 6 is identical with the shape of the heating source 5；And in other embodiment, institute
The shape and the shape of the heating source 5 for stating black matrix film 6 can differ.
S6 steps are that etching window forms lead channels above the lead point 31, make the lead point 31 away from described
The side of substrate is upwardly exposed.Form lead channels can pass through mask plate by direct method or indirect method using direct method
The insulating barrier 4 for not covering the lead point 31 is directly formed etc. mode, and is required to avoid the lead point 31 in subsequent handling
Top.During using indirect method, S6 steps can be implemented after S3 steps form insulating barrier 4, typically according to the specific of subsequent step
Technological requirement can arbitrarily adjust S6 steps.When the heating source 5 using direct method prepare when, S6 steps can be located at S3 steps with
Between S4 steps, the insulating barrier 4 for covering the lead point 31 now need to be only removed；When the heating source 5 uses indirect method
During preparation, S6 may be alternatively located between S4 and S5, is now removed while graphical heating source 5 are formed and covers the lead point 31
Insulating barrier 4.S6 can also be interchangeable with the sequencing of S7 steps.
S7 steps can be implemented after S1 steps form support membrane 2, namely S7 steps can be located in step in S2 ~ S6 arbitrarily
Before and after step.Preferably, S7 steps are implemented as final step, described by substrate 1 as support when implementing other steps
The center section of support membrane 2 is not belonging to vacant state, is unlikely to deform, and is advantageous to the implementation of finishing operations.
S7 steps can use two methods to form cavity.One is direct method, i.e., deep silicon dry etching or monocrystalline silicon
Anisotropic wet caustic solution forms cavity in the lower surface of the substrate 1.Secondly it is indirect method, first in the substrate 1
Lower surface makes mask layer 10, and technique is performed etching to mask layer 10 and forms etching window, under the mask layer 10 not removed is used as
The mask of the etching technics of one step substrate 1；The mask layer 10 not removed does not affect infrared light can finally remove or not remove
The performance in source.The mask layer 10 is identical with the composition of the support membrane 2, can be in step 1 in the two-sided same of the substrate 1
When make mask layer 10 and support membrane 2.
Further, the preparation method of the infrared light supply also includes being located at the S8 encapsulation steps after S7：There is provided one
Encapsulation tube support 7, there is at least two pad 8 and the pin 9 being connected with each pad 8, the weldering on the encapsulation tube support 7
Disk 8 is divided into the both sides of the encapsulation tube support 7 with the pin 9；The infrared light supply chip is fixed on the encapsulation tube support 7
On, and the wiring point 51, lead point 31 are respectively connecting on the different pads 8.Further, can also be described
The side that encapsulation tube support 7 is provided with the solder joint installs the elements such as snoot, protection window additional.
Fig. 1 ~ Figure 10 is referred to, the preparation method of above-mentioned infrared light supply will be illustrated by a specific embodiment below.
It should be noted that the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way, then in schema
Only show the component relevant with the present invention rather than according to component count during actual implement, shape and size drafting, its reality
The kenel of each component, quantity and ratio can be a kind of random change during implementation, and its assembly layout kenel may also be answered more
It is miscellaneous.
Step 1：As shown in Figure 1, there is provided a pair of mirror polish（100）Crystal orientation monocrystalline silicon piece substrate 1；As shown in Fig. 2 with
LPCVD techniques deposit the thick SiN of 500nm on the two sides of the monocrystalline silicon piece substrate 1xFilm；
Step 2：As shown in figure 3, with SiN of the PVD deposition technique in the upper surface of the monocrystalline silicon piecexMade on film
Platinum metal film thick 50nm ~ 500nm；The platinum metal film and SiNx5nm ~ 50nm thick Ti, Cr, TiW are added between film
Deng the adhesion layer of material, for increasing platinum metal film and SiNxAdhesion between film；Again with the method for chemical wet etching by platinum
Metallic film and adhesion layer below are patterned, and form temperature sensor 3；
Step 3：As shown in figure 4, in the temperature sensor 3 and the SiN of etched rear exposurexUse film upper surface
PECVD depositing operations make the thick transparent SiO of 300nm ~ 3000nm2Film, as insulating barrier 4；
Step 4：As shown in figure 5, in the SiO2The upper surface of insulating barrier 4 makes 50nm ~ 500nm with PVD deposition technique
Thick platinum metal film, platinum metal film and SiO2Sticking for the materials such as 5nm ~ 50nm thick Ti, Cr, TiW is added between insulating barrier 4
Layer, for increasing platinum and SiO2Between adhesion, entered with the adhesion layer of the method for chemical wet etching by platinum metal film and below
Row is graphical, forms heating source 5；
Step 5：As shown in fig. 6, using the method for chemical wet etching in the SiO2The lead point 31 is corresponded on insulating barrier 4
Opening position etch window, it is intended to remove the SiO in the window2Insulating barrier 4 forms lead channels, makes the SiO2Absolutely
The lead point 31 of the lower section of edge layer 4 is exposed to outer；
Step 6：As shown in fig. 7, the SiN in the lower surface of monocrystalline silicon piece substrate 1xThe method system that chemical wet etching is used on film
Make square window, it is intended to remove the SiN in square windowx, until exposed single-crystal silicon chip substrate 1, forms a cavity；
Step 7：As shown in figure 8, the top PVD deposition or electric plating method in the heating source 5 described in step 4 make gold
One or more in the black matrix such as black, platinum black, carbon black film 6, form black body radiation layer；
Step 8：As shown in figure 9, the monocrystalline silicon piece substrate 1 is placed in the anisotropy rots such as KOH solution or TMAH solution
Corroded in erosion liquid, until the monocrystalline silicon in window is corroded completely, the upper surface of monocrystalline silicon piece substrate 1 is exposed from below
SiNxSupport membrane 2, infrared light supply chip is formed after cleaning cutting.
Step 9：As shown in Figure 10, the chip after cutting is pasted onto metal or ceramic package base with high-temperature-resistant adhesive
On 7, the lead point 31 of infrared light supply core built-in temperature sensor 3 and two wiring points 51 of heating source 5 are bonded with gold thread respectively
Method be connected on four pads 8 of encapsulation tube support 7, four pads 8 are drawn by four pins 9 and are connected on peripheral circuit.
Further, the parts such as snoot, protection window can further be installed on the encapsulation tube support 7 additional, to reach more preferable using effect.
As shown in Figure 10, it is the infrared light supply that is prepared using the preparation method of above-mentioned infrared light supply, including substrate 1, is located at
The support membrane 2 of the upper surface of substrate 1, the temperature sensor 3 located at the upper surface of support membrane 2, located at the TEMP
Insulating barrier 4, the heating source 5 located at the upper surface of insulating barrier 4, the black matrix film above the heating source 5 of the top of device 3
6；The temperature sensor 3 has realizes the lead point 31 being electrically connected with, the lead point 31 and the wiring point with external circuit
51 part-structure is outwards exposed to be connected with external circuit.
Infrared light supply integrated temperature sensor 3 below the black matrix film 6, by detecting the temperature sensor 3
Resistance value or partial pressure measurement, the temperature drift of infrared light supply can be gone out with Real-time Feedback, facilitates peripheral circuit to sense NDIR
Device measurement result compensates, and so as to improve the stability of NDIR sensors and precision, has in NDIR field of gas detection
Application prospect.
Further, the infrared light supply also includes the cavity being recessed upwards from the middle part of the lower surface of substrate 1.
Specifically, the cavity is recessed to the support membrane 2 upwards from the lower surface of the substrate 1, i.e., described cavity by substrate 1 week
Enclose to set with the support membrane 2 to be formed in edge point；Or the cavity is recessed not to the branch upwards from the lower surface of the substrate 1
Film 2 is supportted, i.e., described cavity is located in substrate 1 and opened down.Filled with air in the cavity, play barrier heating source 5 and produce
The heat insulating function propagated downwards of heat so that heat farthest supplies black matrix film 6 caused by heating source 5, have
Effect reduces the loss of nonfunctional area heat radiation, and then plays a part of energy-conservation.
Further, the infrared light supply also includes making the lead point 31 with the wiring point 51 away from the substrate
The upwardly exposed lead channels in side.The effect of the lead channels is so that the lead point 31 and the wiring point 51 and the external world
Circuit connects, and shape is unlimited.
Further, the substrate 1 is（100）The monocrystalline silicon piece of crystal orientation, the support membrane 2 are SiNxFilm or SiO2It is thin
The combination of one or both of film；The thickness of the support membrane 2 is 500nm or so.
Further, the temperature sensor 3 is patterned first metallic film, and first metallic film selects platinum
Resistance or nichrome resistance.Further, there is adhesion layer between first metallic film and the support membrane 2, with
Strengthen the bond properties of the temperature sensor 3 and the support membrane 2；The adhesion layer is thick Ti, Cr, the TiW of 5nm ~ 50nm
The film formed Deng material.
In the present embodiment, the temperature sensor 3 is located at the centre of the support membrane 2 and is in linear, has symmetrical point
It is distributed in two lead points 31 at lines both ends.
Further, the insulating barrier 4 is the SiN deposited using PECVDxFilm, SiO2One or both of film
Combination, the thickness of the insulating barrier 4 is between 300nm ~ 3000nm.The insulating barrier 4 is translucent or transparent film, therefore
The temperature sensor 3 can be seen through the insulating barrier 4 in a top view.
Further, the heating source 5 is second metallic film of the thickness between 50nm ~ 500nm, second gold medal
Category film selects RTD or nichrome resistance.Further, have between second metallic film and the support membrane 2
There is adhesion layer, to strengthen the bond properties of the heating source 5 and the support membrane 2；The adhesion layer be the thick Ti of 5nm ~ 50nm,
The film that the materials such as Cr, TiW are formed.
In the present embodiment, the serpentine-like upper surface for being uniformly distributed in the insulating barrier 4 of the heating source 5, with to described black
Body thin film 6 is uniformly heated up.Projection of the heating source 5 with the lead point 31 from up to down on the substrate 1 be not overlapping,
Namely the heating source 5 does not cover the lead point 31.In addition, the heating source 5 has two symmetrical wiring points 51,
And two wiring points 51 are located at the both sides of the temperature sensor 3 respectively；Therefore the lead point 31 and the wiring point
51 are connected with external circuit in a different direction, are easy to connect up.
Black matrix film 6 is golden black film of the average emitted rate more than 0.8, platinum black film, carbon black under 2 μm ~ 5 mum wavelengths
Film etc..In the present embodiment, the black matrix film 6 is covered in the heating source 5 and removed on the part of wiring point 51, and described black
The shape of body thin film 6 is identical with the shape of the heating source 5；And in other embodiment, the shape of the black matrix film 6 and institute
Stating the shape of heating source 5 can differ.
Further, the infrared light supply also includes encapsulation tube support 7.There is at least two pad 8 on the encapsulation tube support 7
And the pin 9 being connected with each pad 8, the pad 8 are divided into the both sides of the encapsulation tube support 7 with the pin 9；Tool
Body, the quantity of the pad 8 is identical with the total quantity of the lead point 31 and the wiring point 51.It is described in the present embodiment
There is encapsulation tube support 74 pads 8 being connected with two lead points, 31, two wiring points 51 and 4 leads, the lead to be used for
It is connected with external circuitry.After the infrared light supply is fixed on the encapsulation tube support 7, the cavity simultaneously unsealed, Neng Goufang
Only heat transmits to the side of encapsulation tube support 7.
Further, the side that the encapsulation tube support 7 is provided with the solder joint has the members such as installation snoot, protection window
Part, to reach more preferable using effect.
In summary, the infrared light supply prepared using the infrared light supply of the present invention, under the infrared light supply black matrix film 6
Square integrated temperature sensor 3, the measurement of resistance value or partial pressure by detecting the temperature sensor 3, can be gone out with Real-time Feedback
The temperature drift of infrared light supply, peripheral circuit is facilitated to compensate NDIR sensor measurements, so as to improve NDIR sensings
The stability and precision of device, there is application prospect in NDIR field of gas detection.
The above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although with reference to preferred embodiment to this hair
It is bright to be described in detail, it will be understood by those within the art that, technical scheme can be modified
Or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
It is any related " the present embodiment " in this specification, it is meant that the specific function of one relevant with embodiment, knot
Structure or characteristic description include at least one embodiment of the present invention.These appear in each local phrase of specification not necessarily
Refer to identical embodiment.Further, specific function, structure or the detailed description related to any embodiment, then it is assumed that be
The function related to other embodiment, structure or characteristic in the range of the art.
Claims (12)
1. a kind of preparation method of infrared light supply, comprises the following steps：
S1：Substrate is provided, and support membrane is made in the upper surface of the substrate；
S2：Temperature sensor is made in the upper surface of the support membrane, the temperature sensor has to be communicated with external circuit
The lead point of connection；
S3：Insulating barrier is made in the top of the temperature sensor；
S4：Heating source is made in the upper surface of the insulating barrier, the heating source has to be connect with what external circuit was electrically connected with
Line point, the serpentine-like upper surface for being uniformly distributed in the insulating barrier of the heating source；
S5：Black matrix film is made in the top of the heating source as radiating layer；
S6：The lead point is set outwards to be exposed with the part-structure of the wiring point to be connected with external circuit.
2. the preparation method of infrared light supply according to claim 1, it is characterised in that：The preparation method of the infrared light supply
Also include being located at the step S7 after step S1：Deep trouth is etched upwards in the middle part of the lower surface of the substrate to form sky
Chamber.
3. the preparation method of infrared light supply according to claim 1, it is characterised in that：S6 steps are specially：Draw described
Etching window forms lead channels above line point, makes the lead point upwardly exposed away from the side of the substrate.
4. the preparation method of infrared light supply according to claim 1, it is characterised in that：The substrate is（100）Crystal orientation
Monocrystalline silicon piece, the support membrane are the SiN deposited using LPCVDxFilm, the SiO of thermal oxidation method growth2One kind in film or
Two kinds of combination.
5. the preparation method of infrared light supply according to claim 1, it is characterised in that：S2 steps are specially：In the branch
The upper surface for supportting film makes patterned first metallic film as temperature sensor, and the temperature sensor, which has, is distributed in two
Two lead points at end.
6. the preparation method of infrared light supply according to claim 5, it is characterised in that：First metallic film selects platinum
Resistance or nichrome resistance, S2 steps also include：Before making first metallic film, first made on the support membrane glutinous
Attached layer.
7. the preparation method of infrared light supply according to claim 1, it is characterised in that：The insulating barrier is in the temperature
Using the SiN of PECVD depositions above sensorxFilm, SiO2The combination of one or both of film.
8. the preparation method of infrared light supply according to claim 1, it is characterised in that：S4 steps are specially：Described exhausted
The upper surface of edge layer makes patterned second metallic film as heating source, and the heating source has two wiring points, and two
The individual wiring point is located at the both sides of the temperature sensor respectively；The heating source is with the lead point from up to down described
Projection on substrate is not overlapping.
9. the preparation method of infrared light supply according to claim 8, it is characterised in that：Second metallic film selects platinum
Resistance or nichrome resistance, S4 steps also include：Before making second metallic film, first made on the insulating barrier glutinous
Attached layer.
10. the preparation method of infrared light supply according to claim 1, it is characterised in that：The making side of the black matrix film
Method is specially：Average emitted under 2 μm ~ 5 mum wavelengths is produced on above the heating source by vapour deposition or electric plating method
One or more in golden black film of the rate more than 0.8, platinum black film or carbon black film.
11. the preparation method of infrared light supply according to claim 1, it is characterised in that：The making side of the infrared light supply
Method also includes encapsulation step：One encapsulation tube support is provided, had and the wiring point and lead point on the encapsulation tube support
The pad of connection and the pin being connected with each pad；The quantity of the pad is counted with the lead point and the wiring
The summation of amount is identical；The infrared light supply chip is fixed on the encapsulation tube support, and the wiring point, lead point are distinguished
It is connected on the different pads.
A kind of 12. infrared light supply, it is characterised in that：The infrared light supply is using described in any one in claim 1 ~ 11
The infrared light supply that the preparation method of infrared light supply makes.
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| CN106629577B (en) * | 2016-12-30 | 2019-02-05 | 中国科学院微电子研究所 | MEMS infrared light source and manufacturing method thereof |
| CN106629574B (en) * | 2016-12-30 | 2019-02-05 | 中国科学院微电子研究所 | MEMS infrared light source and manufacturing method thereof |
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