CN102661796A - Active photoelectric marking method for MEMS infrared light supply array - Google Patents

Abstract

The invention relates to photoelectric marking technology, in particular to an active photoelectric marking method of MEMS infrared light source array. The invention solves the problems that the existing photoelectric marking technology is greatly affected by the external environment, cannot meet the requirements of all-weather work, cannot be used for invisible marking under asymmetrical conditions, has low recognition efficiency, and has a small field of view of reflected light. MEMS infrared light source array active photoelectric marking method, the method is realized by the following steps: a. Make an infrared light source array module; b. FPGA controls the radiation signal of the infrared light source array module to appear as a single-point infrared spot signal; c. FPGA controls The radiation signal of the infrared light source array module is presented as a circularly switched dot matrix graphic signal. The invention is applicable to the fields of aircraft landing guidance, ship piloting, route marking, bridge marking, personnel search and rescue, near-ground space wireless communication, identification and tracking of military targets and the like.

Description

MEMS infrared light source array active photoelectric marking method

technical field

The invention relates to photoelectric marking technology, in particular to an active photoelectric marking method of MEMS infrared light source array.

Background technique

Photoelectric marking technology is widely used in aircraft landing guidance, ship piloting, route marking, bridge marking, urban road marking, personnel search and rescue, and military target identification and tracking. The existing photoelectric marking technology is mainly divided into visible light LED marking technology and passive reflective marking technology. Visible light LED marking technology is currently mainly used in the fields of aircraft landing guidance, ship piloting, and urban road marking. Its core device is a visible light LED (Light Emitting Diode, light emitting diode) beacon light. Visible light LED beacon light is a solid-state cold light source based on a semiconductor PN junction. Its working principle is: under a certain forward bias voltage and injection current, the holes injected into the P region and the electrons injected into the N region diffuse to the The active area then emits photons through radiative recombination, which converts electrical energy directly into light energy. Due to the disadvantages of visible light LED beacon lights, such as poor penetration ability to obstacles such as smoke, rain and snow, low contrast of the background environment (poor daytime work ability), and poor concealment, the visible light LED marking technology is greatly affected by the external environment and cannot Disadvantages of invisible marking that meets the requirements of all-weather work and cannot be used in asymmetrical situations. Passive reflective marking technology is currently mainly used in the fields of route marking, bridge marking, personnel search and rescue, etc. Reflective film plays a key role in passive reflective marking technology. Reflective film is an optical material. It is based on the principle of thin lens imaging, and a single layer of glass beads is evenly embedded in organic resin as an optical element, and a film is formed by laminating multiple layers of resin. Passive reflective marking technology is mainly a reflective sign made of reflective film, which is marked by returning and reflecting the incident light according to the original path. Passive reflective marking technology is a passive marking technology, so it has the disadvantages of low recognition efficiency, small field of view of reflected light, and great influence from the external environment. To sum up, due to the limitations of its own principles, the existing photoelectric marking technology is generally affected by the external environment, cannot meet the requirements of all-weather work, cannot be used for invisible marking in asymmetrical situations, has low recognition efficiency, and the field of view of reflected light A small problem. Based on this, it is necessary to invent a brand-new photoelectric identification technology to solve the above-mentioned problems existing in the existing photoelectric identification technology.

Contents of the invention

In order to solve the problems that the existing photoelectric marking technology is greatly affected by the external environment, cannot meet the requirements of all-weather work, cannot be used for invisible marking under asymmetrical conditions, has low recognition efficiency, and has a small range of reflected light field of view, it provides a MEMS infrared light source array active photoelectric marking method.

The present invention is realized by adopting the following technical solutions: MEMS infrared light source array active photoelectric marking method, the method is realized by adopting the following steps: a. making an infrared light source array module: selecting a base and several MEMS infrared light sources, and placing each The MEMS infrared light source is arranged on the surface of the base to form an infrared light source array; the base and each MEMS infrared light source together form an infrared light source array module; b. Point radiation source beacon detection: FPGA (Field-Programmable Gate Array, field programmable gate Array), driving power supply, and infrared light source array module constitute an active point light source photoelectric marking system, and the active point light source photoelectric marking system is installed on the beacon; the driving power supply provides driving voltage for each MEMS infrared light source in the infrared light source array module ; FPGA controls the drive voltage output by the drive power supply to control the radiation of each MEMS infrared light source, and sets the arrangement spacing of the MEMS infrared light source to adapt to the spatial resolution size of the infrared detector, so that the radiation signal of the infrared light source array module is presented as Single-point infrared spot signal; then use the infrared detector to observe and aim to obtain the single-point infrared spot signal, so as to verify the existence of the beacon and obtain the beacon identification information; c. Extended radiation source dot matrix pattern recognition: use FPGA, drive power, infrared The light source array module and the light source array coding graphic module constitute an active extended source photoelectric identification system, and the active extended source photoelectric identification system is installed on the beacon; the driving power supply provides driving voltage for each MEMS infrared light source in the infrared light source array module; On the one hand, the FPGA controls the driving voltage output by the driving power supply, and on the other hand, it controls the coding graphics output by the light source array coding graphics module to realize the transformation, so as to control the radiation of each MEMS infrared light source, so that the radiation signal of the infrared light source array module presents a cyclic switching pattern. Dot-matrix graphic signal; then use the infrared detector to observe and aim within the resolvable distance range to obtain the circularly switched dot-matrix graphic signal, and use the image processing system to demodulate the circularly switched dot-matrix graphic signal obtained by observing and aiming, so as to Verify the existence of a beacon and get a lot of beacon identification information.

In the steps a-c, the MEMS infrared light source, FPGA, driving power supply, light source array coding graphics module, and image processing system are all existing known structures.

The MEMS infrared light source array active photoelectric marking method of the present invention is based on the MEMS infrared light source, and realizes active radiation marking. The MEMS infrared light source is integrated and processed on the semiconductor material substrate using MEMS technology. Its key structure is the radiation film layer on the order of microns, which can achieve fast heating and heat dissipation speed, and has a positive effect on improving the electro-optic conversion efficiency and radiation intensity of the light source. effect. MEMS infrared light source can adjust the radiation wavelength between 1 μm and 20 μm through the modified doping and structure of the radiator material, especially in the infrared atmospheric window (3 μm to 5 μm in the mid-infrared band and 8 μm to 12 μm in the far infrared band). High radiation intensity. The characteristics of MEMS infrared light source are that it can work around the clock, has a long working distance, strong anti-interference ability, strong penetration ability to obstacles such as smoke, rain and snow, and also has high radiation intensity, high electro-optical conversion efficiency, high modulation frequency, small size, Notable features such as light weight, low cost and high working reliability. Based on the above characteristics of the MEMS infrared light source, compared with the visible light LED marking technology, the MEMS infrared light source array active photoelectric marking method of the present invention is less affected by the external environment, can meet the requirements of all-weather work, has good concealment, and is suitable for asymmetric Invisible identification in case. Compared with the passive reflective marking technology, the MEMS infrared light source array active photoelectric marking method of the present invention is an active radiation marking, so it has high recognition efficiency, a large field of view, and is less affected by the external environment. Therefore, the MEMS infrared light source array active photoelectric marking method of the present invention effectively solves the problem of invisible marking and recognition efficiency that the existing photoelectric marking technology is greatly affected by the external environment, cannot meet the requirements of all-weather work, and cannot be used in asymmetrical situations. It has the following advantages: 1. The radiation field of view is adjustable. Second, the recognition efficiency is high. Three, fully automatic identification. Fourth, the effect distance is long. Five, can work around the clock. 6. It has good environmental adaptability and has the ability to work in harsh weather conditions such as rain and snow. 7. Strong anti-interference ability, especially anti-electromagnetic interference. Eight, the beam is narrow, the signal is not easy to be intercepted, and the confidentiality is good. Nine, infrared light is non-visible light, good concealment.

The MEMS infrared light source array active photoelectric marking method described in the present invention is based on the MEMS infrared light source, utilizes the Planck radiator electro-induced self-heating effect of the MEMS structure, and realizes the active radiation marking by generating infrared light through Joule heat radiation. Use the infrared detector (or thermal imager) to directly observe (detect, identify) the beacon identification information (or obtain encrypted information after demodulation by the image processing system), without the need for communication between the beacon and the infrared detector A query-response communication process. At the same time, with the improvement of the infrared light source array structure and the complexity of dot matrix graphics, the amount of encoded information increases geometrically, thus realizing the fast encrypted and secure transmission of a large amount of information.

Based on the MEMS infrared light source, the present invention effectively solves the problem that the existing photoelectric marking technology is greatly affected by the external environment, cannot meet the requirements of all-weather work, cannot be used for invisible marking under asymmetrical conditions, has low recognition efficiency, and has a small field of view of reflected light. It is applicable to areas such as aircraft landing guidance, ship piloting, route marking, bridge marking, personnel search and rescue, near-surface space wireless communication, and military target identification and tracking.

Description of drawings

FIG. 1 is a schematic structural view of a two-dimensional planar infrared light source array module of the present invention.

Fig. 2 is a schematic structural view of the three-dimensional lighthouse structure infrared light source array module of the present invention.

FIG. 3 is a top view of FIG. 2 .

Fig. 4 is a schematic diagram of the working principle of the point radiation source beacon detection of the present invention.

Fig. 5 is a schematic diagram of the working principle of the extended radiation source dot matrix pattern recognition of the present invention.

In the figure: 1-base, 2-MEMS infrared light source.

Detailed ways

Embodiment one

MEMS infrared light source array active photoelectric marking method, the method is realized by the following steps:

a. Make an infrared light source array module: select a base 1 and several MEMS infrared light sources 2, and arrange each MEMS infrared light source 2 on the surface of the base 1 to form an infrared light source array; the base 1 and each MEMS infrared light source 2 jointly Constitute an infrared light source array module;

b. Point radiation source beacon detection: As shown in Figure 4, the active point light source photoelectric marking system is composed of FPGA, driving power supply, and infrared light source array module, and the active point light source photoelectric marking system is installed on the beacon; the driving power supply Provide driving voltage for each MEMS infrared light source 2 in the infrared light source array module; FPGA controls the driving voltage output by the driving power supply, so as to control the radiation of each MEMS infrared light source 2, and set the arrangement spacing of MEMS infrared light source 2 to adapt to the infrared The spatial resolution size of the detector makes the radiation signal of the infrared light source array module appear as a single-point infrared spot signal; then use the infrared detector to observe and aim to obtain the single-point infrared spot signal, so as to verify the existence of the beacon and obtain the beacon identification information;

c. Extended radiation source dot matrix graphic recognition: as shown in Figure 5, the active extended source photoelectric identification system is composed of FPGA, drive power supply, infrared light source array module, and light source array coding graphic module, and the active extended source photoelectric identification system Installed on the beacon; the driving power supply provides driving voltage for each MEMS infrared light source 2 in the infrared light source array module; on the one hand, the FPGA controls the driving voltage output by the driving power supply, and on the other hand controls the coding graphics output by the light source array coding graphics module to realize the transformation , in order to control each MEMS infrared light source 2 to radiate, so that the radiation signal of the infrared light source array module presents a circularly switched dot matrix graphic signal; signal, and use the image processing system to demodulate the cyclically switched dot matrix graphic signal obtained by observation and aiming, so as to verify the existence of the beacon and obtain a large amount of beacon identification information;

In the step b, the FPGA controls the driving voltage output by the drive power supply by programming a pulse square wave with an adjustable output frequency and duty cycle; The pulse square wave is used to control the driving voltage output by the driving power supply, and on the other hand, the coding graphics output by the light source array coding graphics module are controlled by controlling the modulation frequency of the light source to realize the transformation;

As shown in Figure 1, in the step a, the base 1 is a planar base; each MEMS infrared light source 2 is arranged on the surface of the planar base to form a two-dimensional planar infrared light source array; the planar base and each The MEMS infrared light source 2 together constitutes a two-dimensional planar infrared light source array module; when working, the two-dimensional planar infrared light source array can realize small-angle radiation in a directional field of view, effectively improving the utilization efficiency of radiation energy;

During specific implementation, the infrared light source array can be an array of any shape. Each MEMS infrared light source is individually packaged and powered separately. Each MEMS infrared light source is connected in parallel.

Embodiment two

MEMS infrared light source array active photoelectric marking method, the method is realized by the following steps:

a. Make an infrared light source array module: select a base 1 and several MEMS infrared light sources 2, and arrange each MEMS infrared light source 2 on the surface of the base 1 to form an infrared light source array; the base 1 and each MEMS infrared light source 2 jointly Constitute an infrared light source array module;

b. Point radiation source beacon detection: As shown in Figure 4, the active point light source photoelectric marking system is composed of FPGA, driving power supply, and infrared light source array module, and the active point light source photoelectric marking system is installed on the beacon; the driving power supply Provide driving voltage for each MEMS infrared light source 2 in the infrared light source array module; FPGA controls the driving voltage output by the driving power supply, so as to control the radiation of each MEMS infrared light source 2, and set the arrangement spacing of MEMS infrared light source 2 to adapt to the infrared The spatial resolution size of the detector makes the radiation signal of the infrared light source array module appear as a single-point infrared spot signal; then use the infrared detector to observe and aim to obtain the single-point infrared spot signal, so as to verify the existence of the beacon and obtain the beacon identification information;

c. Extended radiation source dot matrix graphic recognition: as shown in Figure 5, the active extended source photoelectric identification system is composed of FPGA, drive power supply, infrared light source array module, and light source array coding graphic module, and the active extended source photoelectric identification system Installed on the beacon; the driving power supply provides driving voltage for each MEMS infrared light source 2 in the infrared light source array module; on the one hand, the FPGA controls the driving voltage output by the driving power supply, and on the other hand controls the coding graphics output by the light source array coding graphics module to realize the transformation , in order to control each MEMS infrared light source 2 to radiate, so that the radiation signal of the infrared light source array module presents a circularly switched dot matrix graphic signal; signal, and use the image processing system to demodulate the cyclically switched dot matrix graphic signal obtained by observation and aiming, so as to verify the existence of the beacon and obtain a large amount of beacon identification information;

In the step b, the FPGA controls the driving voltage output by the drive power supply by programming a pulse square wave with an adjustable output frequency and duty cycle; The pulse square wave is used to control the driving voltage output by the driving power supply, and on the other hand, the coding graphics output by the light source array coding graphics module are controlled by controlling the modulation frequency of the light source to realize the transformation;

As shown in Figures 2 and 3, in the step a, the base 1 is a prism-shaped base; each MEMS infrared light source 2 is arranged on the upper bottom and side surfaces of the prism-shaped base to form a three-dimensional lighthouse structure infrared light source array; by The prism-shaped base and each MEMS infrared light source 2 together constitute a three-dimensional lighthouse structure infrared light source array module; when working, the three-dimensional lighthouse structure infrared light source array can realize wide-angle radiation with a large field of view, the radiation angle reaches 360°, and there is no signal blind area;

During specific implementation, the infrared light source array can be an array of any shape. Each MEMS infrared light source is individually packaged and powered separately. Each MEMS infrared light source is connected in parallel.

Claims (4)

1. A MEMS infrared light source array active photoelectric marking method is characterized in that: the method is realized by following steps: a. Make an infrared light source array module: select the base (1) and several MEMS infrared light sources (2), and arrange each MEMS infrared light source (2) on the surface of the base (1) to form an infrared light source array; the base (1) and each MEMS infrared light source (2) together constitute an infrared light source array module; b. Point radiation source beacon detection: use FPGA, driving power supply, and infrared light source array module to form an active point light source photoelectric marking system, and install the active point light source photoelectric marking system on the beacon; the driving power is in the infrared light source array module Each MEMS infrared light source (2) provides driving voltage; FPGA controls the driving voltage output by the driving power supply, so as to control the radiation of each MEMS infrared light source (2), and set the arrangement spacing of MEMS infrared light source (2) to adapt to the infrared The spatial resolution size of the detector makes the radiation signal of the infrared light source array module appear as a single-point infrared spot signal; then use the infrared detector to observe and aim to obtain the single-point infrared spot signal, so as to verify the existence of the beacon and obtain the beacon identification information; c. Extended radiation source dot matrix graphic recognition: use FPGA, drive power, infrared light source array module, and light source array coding graphic module to form an active extended source photoelectric identification system, and install the active extended source photoelectric identification system on the beacon; The driving power supply provides driving voltage for each MEMS infrared light source (2) in the infrared light source array module; on the one hand, the FPGA controls the driving voltage output by the driving power supply, and on the other hand controls the coding graphics output by the light source array coding graphics module to realize transformation, so as to control Each MEMS infrared light source (2) radiates, so that the radiation signal of the infrared light source array module presents a circularly switched dot matrix graphic signal; then the infrared detector is used to observe and aim within the resolvable distance range to obtain the circularly switched dot matrix graphic signal And the image processing system is used to demodulate the circularly switched dot matrix graphic signal obtained by observation and aiming, so as to verify the existence of beacons and obtain a large amount of beacon identification information. 2. The MEMS infrared light source array active photoelectric marking method according to claim 1, characterized in that: in the step b, the FPGA controls the output of the drive power supply by programming a pulse square wave with adjustable output frequency and duty cycle Driving voltage; in the step c, the FPGA controls the driving voltage output by the driving power supply by programming the pulse square wave with adjustable output frequency and duty cycle on the one hand, and controls the light source array coding graphics module by controlling the light source modulation frequency on the other hand The output coded graph implements the transform. 3. The MEMS infrared light source array active photoelectric marking method according to claim 1 or 2, characterized in that: in the step a, the base (1) is a planar base; each MEMS infrared light source (2) Arranged on the surface of the planar base to form a two-dimensional planar infrared light source array; the planar base and each MEMS infrared light source (2) together constitute a two-dimensional planar infrared light source array module. 4. The MEMS infrared light source array active photoelectric marking method according to claim 1 or 2, characterized in that: in the step a, the base (1) is a prism-shaped base; each MEMS infrared light source (2) Arranged on the upper bottom and side surfaces of the prism-shaped base to form a three-dimensional lighthouse structure infrared light source array; the prism-shaped base and each MEMS infrared light source (2) jointly constitute a three-dimensional lighthouse structure infrared light source array module.

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