CN101419092B - Method for making pyroelectric infrared detector for planarization thermal isolation structure - Google Patents
Method for making pyroelectric infrared detector for planarization thermal isolation structure Download PDFInfo
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- CN101419092B CN101419092B CN2008100798660A CN200810079866A CN101419092B CN 101419092 B CN101419092 B CN 101419092B CN 2008100798660 A CN2008100798660 A CN 2008100798660A CN 200810079866 A CN200810079866 A CN 200810079866A CN 101419092 B CN101419092 B CN 101419092B
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Abstract
The invention discloses a pyroelectric infrared detector provided with a planarized heat-insulated structure and a preparation method thereof. The pyroelectric infrared detector comprises a substrate and the heat-insulated structure, wherein the heat-insulated structure is as follows: a deep notch of a corresponding figure of a lower electrode of a detector is etched on the silicon or sapphire substrate; a porous silicon dioxide layer is deposited inside the deep notch; and silicon dioxide layers or silicon nitride layers are deposited on the porous silicon dioxide layer and the substrate. The detector is easy to be integrated with other devices by means of single scale intergration, is favorable for high-density integration of detector units, has simple manufacturing technique and low processing cost, simultaneously greatly reduces the vertical height difference of steps of a mesa device structure, is easy to interconnect metals, reduces the difficulty of the processing technique of devices and the surface leakage current of the devices, improves the performance and the finished product rate of the pyroelectric infrared detector, and obviously improves the reliability of the devices. The detector provided with the structure is suitable for infrared-ultraviolet dual-range single scale intergration and manufacture of the infrared detector and a CMOS ROIC one chip integrated focal plane device.
Description
Technical field
The invention belongs to the photo-detector technical field, especially a kind of preparation method of pyroelectric infrared detector of planarization thermal isolation structure.
Background technology
Pyroelectric infrared detector is because of its price is low, in light weight, response speed is fast, spectral responsivity is wide, working and room temperature need not freeze, be easy to thermal imaging, ratio of performance to price advantages of higher; Be widely used in fields such as industry, environment, medical treatment, military affairs, become one of focus of current infrared technique area research.The key factor that influences the pyroelectric infrared detector performance has two: the one, and the performance of ferroelectric thin-flim materials, another factor are the structures of detector cells; When area one timing of detector, improve responsiveness and just must reduce detector thermal conductance, raising device thermal capacitance, so the design of detector cells thermal insulation structure is the key factor of making high performance device.The pyroelectric infrared detector thermal insulation structure of having reported mainly contains 3 kinds of forms: compound membrane type mesa structure, air-gap structure and micro-bridge structure.First kind is porous SiO
2/ SiO
2Compound membrane type mesa structure, this structure is simpler, but high step influences problems such as passivation and metallization interconnect, thereby has increased technology difficulty and device surface leakage current, and to be difficult for monolithic integrated with other devices, and processing compatibility is poor; Air-gap and micro-bridge structure, these two kinds of structural heat-insulations are effective, but complex manufacturing technology has increased cost, and yield rate is low.
Summary of the invention
The technical matters that the present invention will solve provides that a kind of manufacture craft is simple, cost is low, yield rate is high, is prone to the preparation method with the pyroelectric infrared detector of the single chip integrated planarization thermal isolation structure of other devices.
For solving the problems of the technologies described above; The present invention includes substrate and thermal insulation structure; Described thermal insulation structure is the deep trouth that on silicon or Sapphire Substrate, is etched with the corresponding figure of detector bottom electrode; In deep trouth, deposit porous silica layer, on porous silica layer and substrate, be deposited with silicon dioxide layer or silicon nitride layer.
Preparation method of the present invention makes the corresponding figure of detector bottom electrode by lithography on silicon or Sapphire Substrate; Utilize reactive ion (RIE, Reactive ion etch) etching or inductively coupled plasma (ICP, Inductivecouple plasma) etching to form deep trouth; The deposition porous silica layer is as thermofin in deep trouth; Etching away porous silica through the reactive ion large tracts of land makes itself and substrate epitaxial laminar surface form same plane; Deposit silicon dioxide or silicon nitride are modified porous silica surface and substrate epitaxial laminar surface again, on thermal insulation structure with the making of semiconductor fine processing technology completion pyroelectric infrared detector.
The concrete thinking of the present invention is (if integrated with other photoelectric device monolithics at silicon (Si) or Sapphire Substrate; Need the material epitaxy layer structure of this photoelectric device of extension on Sapphire Substrate, concrete structure is relevant with requirement on devices before) on make the bigger slightly figure of ratio detection device bottom electrode by lithography; Shelter with thick photoresist; Utilize RIE or ICP etching to form deep trouth, remove photoresist, make porous silica layer as thermofin with sol-gal process; Through RIE large tracts of land etching porous silica; Porous silica around detector bottom electrode figure is etched totally, promptly exposes detector bottom electrode figure material epitaxy laminar surface on every side, and deposit silicon dioxide or silicon nitride are modified the porous silica surface again; Form the porous silica thermofin of buried type complanation structure, accomplish the making of pyroelectric infrared detector then with the semiconductor fine processing technology.
Adopt the beneficial effect that technique scheme produced to be: the present invention has realized a kind of pyroelectric infrared detector planarization thermal isolation structure compatible with semiconductor fabrication process; The detector of this structure is easy to other device monolithics integrated; The high density that helps detector cells is integrated; And manufacture craft is simple, and processing cost is low; Greatly reduced simultaneously the step vertical drop of mesa devices structure, be easy to metal interconnected, thereby reduce the device manufacturing process difficulty, reduce the device surface leakage current; Realization of the present invention has improved pyroelectric infrared detector performance and yield rate, the reliability of device also be improved significantly.The present invention be applicable to pyroelectric infrared detector, infrared-the ultraviolet dual wave-band monolithic is integrated, the making of infrared eye and CMOS ROIC (Lowpressure chemical vapor deposition) the integrated focal plane device of monolithic.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation.
Fig. 1 is a structural representation of the present invention;
Fig. 2 a-2h is a technological process synoptic diagram of the present invention.
Each Reference numeral is represented in the accompanying drawing: epitaxial loayer, 104-SiO on 101-silicon (Si) or Sapphire Substrate, 102-porous silica, 103-silicon (Si) or the Sapphire Substrate
2Or Si
3N
4Decorative layer, 105-bottom electrode pattern electrodes, 106-BST ferroelectric thin film, 107-top electrode pattern electrodes, 108-Si
3N
4Passivation layer, 109-infrared eye top electrode, 110-infrared eye bottom electrode
Embodiment
As shown in Figure 1, the pyroelectric infrared detector of this planarization thermal isolation structure comprises substrate and thermal insulation structure, and described substrate is silicon (Si) or Sapphire Substrate 101.The pyroelectric infrared detector of this planarization thermal isolation structure is the deep trouth that on silicon or Sapphire Substrate 101, is etched with the corresponding figure of detector bottom electrode; In deep trouth, deposit porous silica layer 102, on porous silica layer 102 and substrate epitaxial layer 103, be deposited with silicon dioxide layer or silicon nitride layer 104.As shown in Figure 1, on thermal insulation structure, be provided with bottom electrode pattern electrodes 105, BST ferroelectric thin film 106, top electrode pattern electrodes 107, Si3N4 passivation layer 108, infrared eye top electrode 109 and infrared eye bottom electrode 110.
The pyroelectric infrared detector of this planarization thermal isolation structure adopts following preparation method:
1, pre-service before silicon (Si) or Sapphire Substrate 101 photoetching: use trichloroethanes, acetone, isopropyl alcohol cleans substrate 101; If Sapphire Substrate is removed the natural oxidizing layer on substrate 101 or the epitaxial loayer 103 with HCL:H2O again, under 200 ℃/30min condition, remove the moisture of substrate then, clean with plasma apparatus more in case of necessity;
If this detector is integrated with other device monolithics; Before pre-service, need on sapphire or silicon substrate 101 through metal organic chemical vapor deposition (MOCVD, Metal organic chemical vapordeposition) or molecular beam epitaxy technique (MBE, Molecular beam epitaxy) grown epitaxial layer 103 (concrete material parameter is relevant with other monolithic integrated devices), shown in Fig. 2 a.
2, on the epitaxial loayer 103 on pretreated substrate 101 or the substrate, apply photoresist, the glue type is SPR2204.5, rotating speed: 3000～6000r/min, and the hot plate post bake: 90 ℃/90s, shown in Fig. 2 b.
3, through exposure, develop, the back baking, plasma is swept photoetching process such as glue and on photoresist, is produced detector bottom electrode graph of a correspondence, shown in Fig. 2 c.
4, utilize SPR220 4.5 photoresists to shelter,, make it to form deep trouth through RIE or ICP etching epitaxial loayer 103, substrate 101; Groove depth is 3～6 microns, after etching finishes, removes photoresist with acetone; Wherein etchant gas is relevant with substrate type with the etching process parameter, shown in Fig. 2 d.
5, make porous silica with sol-gal process,, select the rotational speed between 3000～6000r/min to apply porous silica 102 according to the degree of depth of concrete groove; If groove is darker; When one time deficiency is filled and led up, repeat this technology, fill and lead up groove until porous silica; Shown in Fig. 2 e.
6, utilize RIE equipment large tracts of land to etch away unnecessary porous silica 102 to epitaxial loayer 103 surfaces; Porous silicas when 103 surfaces corrode when clean; Then form porous silica 102 and epitaxial loayer 103 surfaces in the groove on same surface level, shown in Fig. 2 f.Etching gas is: carbon tetrafluoride or fluoroform, power are 100W, and concrete etching time is relevant with porous silica 102 thickness above the epitaxial loayer 103.
7, utilize plasma-reinforced chemical vapor deposition (PECVD, Plasma enhanced chemical vapordeposition) or low-pressure chemical vapor phase deposition (LPCVD, Low pressure chemical vapordeposition) deposit silicon dioxide or silicon nitride 104 modification porous silicas 102 surfaces on porous silica 102 and epitaxial loayer 103 surfaces, thickness is 180nm～220nm; So far, the planarization thermal isolation structure of infrared eye forms, shown in Fig. 2 g
8, adopt semiconductor technology on the porous silica 102 of planarization thermal isolation structure and SiO2 or Si3N4 decorative layer 104, to make pyroelectric infrared detector; Manufacturing process is: the bottom electrode figure that on the porous silica 102 of the thermal insulation structure of complanation and SiO2 or Si3N4 decorative layer 104, makes detector by lithography; Electron beam evaporation Ti/Pt forms bottom electrode pattern electrodes 105 through stripping technology then; With magnetic control sputtering system deposit Ba0.65Sr0.35TiO3 (BST) ferroelectric thin film on bottom electrode figure 105 and SiO2 or Si3N4 decorative layer 104 surfaces; At bottom electrode pattern electrodes 105 and the top electrode figure that makes detector above the BST ferroelectric thin film 106 by lithography, as the top electrode contacting metal, utilize stripping technology to form top electrode pattern electrodes 107 through sputter thin layer Ni/Cr; Table top to infrared eye top electrode 107 carries out figure protection photoetching then; Photoresist is AZ1500, corrodes unnecessary BST to SiO2 or Si3N4 decorative layer 104 surface and bottom electrode pattern electrodes 105 (the part bottom electrode metal that exposes) surfaces with the HF:H2O corrosive liquid; Utilize PECVD on SiO2 or Si3N4 decorative layer 104, bottom electrode pattern electrodes 105 and top electrode pattern electrodes 107 (part of exposing) surface deposit 500nm silicon nitride as passivation layer; Make the bottom electrode graphical window of detector top electrode and need extension by lithography, erode the thick silicon nitride of 500nm in the graphical window, remove photoresist through RIE; At top electrode pattern electrodes 107 and Si3N4 passivation layer 108 surfaces and graphical window sputtered with Ti/Au, an electrode during as plating; On Si3N4 passivation layer 108 surfaces, make the upper and lower electrode pattern of detector by lithography; Produce the top electrode 109 and bottom electrode 110 of detector through electroplating technology; So far, the pyroelectric infrared detector of this planarization thermal isolation structure completes, shown in Fig. 2 h.
Claims (6)
1. the preparation method of the pyroelectric infrared detector of a planarization thermal isolation structure; Said pyroelectric infrared detector comprises substrate and thermal insulation structure; Described thermal insulation structure is the deep trouth that on silicon or sapphire substrate, is etched with the corresponding figure of detector bottom electrode; In deep trouth, deposit porous silica layer, on porous silica layer and substrate, be deposited with silicon dioxide layer or silicon nitride layer; The preparation method who it is characterized in that said pyroelectric infrared detector is: on said silicon or sapphire substrate, make the corresponding figure of said detector bottom electrode by lithography; Corresponding pattern etching is formed deep trouth; The deposition porous silica layer is as thermofin in said deep trouth; Etching away porous silica makes itself and substrate epitaxial laminar surface form same plane; Deposit silicon dioxide or silicon nitride are modified porous silica surface and substrate epitaxial laminar surface again, the last making of on thermal insulation structure, accomplishing pyroelectric infrared detector.
2. the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 1 is characterized in that said deep trouth is to utilize reactive ion or inductively coupled plasma to carry out etching, 3～6 microns of groove depths.
3. the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 1; It is characterized in that described porous silica is through the making of gel sol gel process; According to the degree of depth of concrete deep trouth, select corresponding rotational speed in deep trouth, to apply porous silica.
4. the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 1 is characterized in that making itself and substrate epitaxial laminar surface form same plane through the reactive ion etching porous silica.
5. the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 1; It is characterized in that adopting plasma-reinforced chemical vapor deposition method or low-pressure chemical vapor phase deposition method deposit silicon dioxide or silicon nitride to modify the porous silica surface, deposition thickness is 180nm～220nm.
6. according to the preparation method of the pyroelectric infrared detector of described any one planarization thermal isolation structure of claim 2-5, it is characterized in that on thermal insulation structure accomplishing the making of pyroelectric infrared detector with the semiconductor fine processing technology.
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| US8476530B2 (en) * | 2009-06-22 | 2013-07-02 | International Business Machines Corporation | Self-aligned nano-scale device with parallel plate electrodes |
| CN102842530B (en) * | 2012-08-15 | 2014-11-19 | 电子科技大学 | Thick film material electronic component and preparation method |
| CN102820421A (en) * | 2012-08-15 | 2012-12-12 | 电子科技大学 | Preparation method for pyroelectric thick film detector with silicon cup groove structure |
| CN104176699A (en) * | 2014-07-18 | 2014-12-03 | 苏州能斯达电子科技有限公司 | MEMS (micro electro mechanical system) silica-based micro-hotplate provided with thermal insulation channels and processing method of MEMS silica-based micro-hotplate |
| CN104108677A (en) * | 2014-07-18 | 2014-10-22 | 苏州能斯达电子科技有限公司 | MEMS (Micro-Electro-Mechanical System) silicon-based micro-heating plate and processing method thereof |
| CN105352608B (en) * | 2015-11-19 | 2019-02-15 | 电子科技大学 | Wide spectrum pyroelectric detector absorbed layer and preparation method thereof |
| CN105914252B (en) * | 2016-06-12 | 2017-06-27 | 中国科学院上海技术物理研究所 | Ultraviolet infrared double color focus plane detector array and its performance design and preparation method |
| CN107546319B (en) * | 2017-08-28 | 2019-06-21 | 电子科技大学 | A kind of pyroelectric infrared detector and preparation method thereof |
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| CN1693858A (en) * | 2005-05-20 | 2005-11-09 | 中国科学院上海技术物理研究所 | Absorbed layer of room-temp. ferroelectric film infrared focal plane probe and preparation method |
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| CN1693858A (en) * | 2005-05-20 | 2005-11-09 | 中国科学院上海技术物理研究所 | Absorbed layer of room-temp. ferroelectric film infrared focal plane probe and preparation method |
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