CN102842530B - Thick film material electronic component and preparation method thereof - Google Patents
Thick film material electronic component and preparation method thereof Download PDFInfo
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Abstract
A thick film material electronic component belongs to the technical field of electronic materials and components. The pyroelectric substrate comprises a substrate with a groove, a barrier layer, a bottom electrode, a pyroelectric material and an upper electrode, wherein an isolation layer is arranged between the upper electrode and the bottom electrode, and the upper electrode spans the isolation layer and the bottom electrode below the isolation layer and is connected to the pyroelectric material. The invention can effectively prevent short circuit between electrodes, so that the pyroelectric thick film detector obtains good performance, and the yield of the detector is improved.
Description
Technical field
The present invention relates to a kind of manufacturing process of thick-film material electronic devices and components, relate in particular to a kind of unique film top electrode outbound course that is filled in thick-film material in structure of silicon cup, belong to electronically materials and component technical field.
Background technology
At present, along with the automaticity unprecedented universal and production technology of electronic apparatus application is increasingly complete, high-power, miniaturization, lightweight, multifunction, greenization and cost degradation inevitably become the developing direction of new electronic component.The thick film circuit that thick-film material electronic devices and components are applied to more and thick film hybrid, generally refer to by silk screen printing, the operation such as burn till and on substrate, make interconnecting lead, resistance, electric capacity, inductance etc., meets the circuit unit of certain functional requirement.The thick film hybrid of thick-film material electronic devices and components made is having its irreplaceability aspect high temperature, high pressure, high-power circuit.
Thick-film material electronic devices and components are to produce along with the generation of thick-film electronic material and thick film technology, along with its development.The thick film technology that thick-film material electronic devices and components use is that set electron material, polylaminate wiring technique, surperficial micro-assembling and Planar integration technology are in the microelectric technique of one.Meeting aspect most of Electronic Packaging and interconnection require, thick film technology is with a long history.Particularly, in military, the Aerospace Products and industrial portable mobile wireless product in enormous quantities of highly reliable small lot, this technology has all been given play to significant advantage.
Thick-film material is widely used, and the electric capacity in its thick-film electronic components and parts of preparing adopts slab construction more.The main composition of slab construction is: substrate/electrode layer/middle insulated medium layer/electrode layer.As make a kind of thick-film electroluminescent device of studying electroluminescence characters, whole device architecture is ito transparent electrode/interior electrode/insulating thick film layer/luminescent layer/ito transparent electrode; A silicon micro-ultrasonic transducer and for example, its structure is Si substrate/SiO
2layer/adhesive linkage (epoxy glue)/bottom electrode/piezoelectric layer/top electrode.In above-mentioned example, there are upper and lower electrode layer and thick middle membrane layers.Its basic principle is by electrode, to introduce certain to trigger as light triggering or electricity triggering, makes thick middle membrane layers change and obtain certain performance.As can be seen here, in above-mentioned thick-film material electronic devices and components, the quality of thick-film material and electrode is most important on the impact of performance.Therefore, the good thick-film material electronic devices and components of processability must obtain high performance thick-film material and high-quality electrode.
Traditional thick-film material electronic devices and components manufacture method is to prepare after pyroelectricity thick film at substrate surface, then by etc. static pressure obtain smooth thick-film material, then extraction electrode, polarizes to thick film, obtains the thick-film material there is certain performance.But said method has two main defects: defect one, because thick-film material is at substrate surface, when the static pressure such as process, easily makes thick film cracking; Defect two electrodes are difficult to draw.Because the thickness of thick-film material reaches tens of microns, there is the difference in height of tens of microns in thick film surface and substrate surface, by traditional stripping method, prepares electrode, is first the photoresist that is difficult to find thickness like this, and craft precision is difficult to assurance; Next is that the electrode of preparing is relatively thin, the domatic height of thick-film material and steep, may only have extremely thin electrode even there is no electrode domatic while preparing top electrode, makes the electrode of thick film surface and the electrode of substrate surface be difficult to couple together, cause lead rupture, have a strong impact on the quality of electrode.Tradition is prepared electrode also can adopt the method for welding lead, but for the compatibility with micromechanics integrated technique, the preparation of electrode is generally prepared by stripping method, and does not adopt welding lead.
Therefore in order to solve the problem of above two, can take following methods (as shown in Figure 1): first with Si, make substrate, on Si substrate 001, prepare barrier layer 002, then in front, prepare silicon cup groove, silicon cup groove has certain gradient, then utilize photoetching technique and sputtering technology, form hearth electrode figure sputter hearth electrode 003.Then in silicon cup, deposit pyroelectricity material 004, on pyroelectric detect unit, sputtered film is as top electrode 005, re-use dual surface lithography technology, corresponding with front probe unit, at the back side of substrate alignment mutual disjunct unit pattern each other, the Si substrate that uses the wet etching probe unit back side, makes each probe unit unsettled, forms thermal insulation structure.
The Infrared Detectors that said method is made has solved in the problem that waits thick-film material cracking in static pressure situation with front etch silicon cup groove, but not can solve electrode draws problem.Because thick-film material 004 directly contacts with Si substrate 001, when high temperature sintering, there is phase counterdiffusion, the performance of grievous injury thick-film material, the hearth electrode 003 of therefore preparation before deposition of thick membrane material 004 in silicon cup must cover whole silicon cup groove by its two isolation.Yet the hearth electrode 003 that covers whole silicon cup bottom portion of groove approaches (as shown in Figure 1) with the top electrode 005 of silicon cup recess edge very much, and close upper/lower electrode can puncture when polarization experiment in easy short circuit mutually, have a strong impact on the quality of thick-film material and metal electrode, the performance of infringement pyroelectricity thick film detector, causes detector rate of finished products too low.
Therefore, how in preparing pyroelectricity thick film detector process, to prevent that upper/lower electrode short circuit from puncturing, thereby guarantee the quality of thick-film material and metal electrode, improve the quality and performance of detector, improve rate of finished products, solve the electrode problem of drawing and seem particularly important.
Summary of the invention
Technical problem to be solved by this invention is that a kind of thick-film material electronic devices and components and preparation method who effectively prevents the conducting of upper/lower electrode is provided.
The technical scheme that the present invention solve the technical problem employing is, thick-film material electronic devices and components, comprise and be with reeded substrate, barrier layer, hearth electrode, pyroelectricity material and top electrode, between top electrode and hearth electrode, be provided with separator, top electrode is crossed over the hearth electrode of separator and separator below, is connected to pyroelectricity material.
Described separator ring-type is arranged at the recess edge of substrate.The material of described separator is different from the material on barrier layer.The material of described separator is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on described barrier layer is SiO
2or Si
3n
4.
The preparation method of thick-film material electronic devices and components comprises the steps:
Step 1: prepare substrate and barrier material;
Step 2: prepare hearth electrode on barrier material;
Step 3: prepare pyroelectricity material in silicon cup groove on hearth electrode;
Step 4: pyroelectricity material high temperature sintering becomes porcelain;
Step 5: form separator figure in the photoetching of silicon cup recess edge, then hot setting forms separator;
Step 6: draw top electrode above pyroelectricity material and separator.
The present invention can effectively prevent interelectrode short circuit, makes pyroelectricity thick film detector obtain good performance, and has improved the rate of finished products of detector.The present invention has following advantage and good effect: micro electronmechanical photoetching process is ripe, can obtain various required barrier layer figures; The precision of figure is very high, and machining accuracy can reach several microns, can meet the preparation requirement of high density, fine; Technique is simple, reproducible.
Accompanying drawing explanation
Fig. 1. the structural representation of the pyroelectric infrared detector of prior art
Wherein, the 001st, Si substrate, the 002nd, SiO
2film barrier layer, the 003rd, hearth electrode, the 004th, heat-sensitive material, the 005th, top electrode;
Fig. 2. the structural representation of embodiments of the invention 1
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer, the 103rd, hearth electrode, the 104th, pyroelectricity material, the 105th, AZ9260 separator, the 106th, top electrode;
Fig. 3. utilize the process chart of the prepared pyroelectricity thick film detector of the present invention
Fig. 3 a prepares SiO on Si substrate
2the schematic diagram of film barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer;
Fig. 3 b prepares the schematic diagram of silicon cup groove on Si substrate
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer;
Fig. 3 c is deposition SiO
2the schematic diagram of film barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer;
Fig. 3 d is at SiO
2the schematic diagram of preparing Pt/Ti hearth electrode in film barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer, the 103rd, Pt/Ti hearth electrode;
Fig. 3 e deposits the schematic diagram of PZT pyroelectricity thick film on Pt/Ti hearth electrode
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer, the 103rd, Pt/Ti hearth electrode,
The 104th, pyroelectricity material;
Fig. 3 f prepares the schematic diagram on AZ9260 barrier layer in silicon cup recess edge
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer, the 103rd, Pt/Ti hearth electrode,
The 104th, pyroelectricity material, the 105th, AZ9260 separator;
Fig. 3 g prepares the schematic diagram of Pt/Ti top electrode on PZT pyroelectricity thick film and AZ9260 barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2film barrier layer, the 103rd, Pt/Ti hearth electrode,
The 104th, pyroelectricity material, the 105th, AZ9260 barrier layer, the 106th, Pt/Ti top electrode;
Fig. 4. utilize the pyroelectricity voltage response curves figure of the prepared pyroelectricity thick film detector of the present invention
Wherein, the 107th, pyroelectricity voltage analog curve, the 108th, pyroelectricity voltage tester curve;
Embodiment
The present invention is based on micromechanical process, utilizes photoetching technique, adopts a kind of isolated material to carve required figure in silicon cup recess edge, and then hot setting forms barrier layer, finally by photoetching technique and sputtering technology, draws top electrode.Top electrode, between hearth electrode, thick-film material and top electrode, can not only be drawn cleverly in above-mentioned this barrier layer, and effectively prevents the conducting of upper/lower electrode, and technique is simple, precision is controlled, and the device performance of making is good.
As embodiment 1, thick-film material electronic devices and components are pyroelectricity thick film detector, and structural representation as shown in Figure 2.It comprises is with reeded substrate 101, barrier layer 102, hearth electrode 103, pyroelectricity material 104 and top electrode 106, between top electrode 106 and hearth electrode 103, be provided with separator 105, top electrode is crossed over the hearth electrode of separator 105 and separator 105 belows, is connected to pyroelectricity material 104.Described separator 105 ring-types are arranged at the recess edge of substrate 101, and separator 105 covers the hearth electrode 103 at recess edge place and the part of pyroelectricity material 104, and top electrode 106 and hearth electrode 103 are isolated completely.
The material of described separator 105 is different from the material on barrier layer 102.The material of described separator 105 is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on described barrier layer 102 is SiO
2or Si
3n
4.
The present invention also provides the preparation method of thick-film material electronic devices and components, comprises following sequential steps:
Step 1: obtain substrate 101 and barrier material 102.Substrate forms the problem that groove has solved pyroelectricity thick-film material cracking, but must have desired to the groove forming.Require groove to have certain gradient, because if the domatic near normal of groove, when preparing hearth electrode, may only have thin electrode extremely even there is no electrode groove is domatic, the hearth electrode of groove floor just cannot be coupled together with the hearth electrode of substrate surface, electrode will break apart, the quality of grievous injury electrode, there is certain gradient in the groove that therefore requires backing material to form.Silicon chip not only meets above-mentioned requirements, and body silicon technology technique is simple, repeatable high, and good with thick-film technique compatibility, based on these advantage backing materials 101, selects silicon chip.The thickness of substrate 101 is 0.3-1mm.
Corrosion or dry etching silicon cup groove.Obtaining the selected method of groove with certain slope has: corrosion or dry etching.The method of corrosion forms silicon cup groove anisotropic etchant used and mainly contains: potassium hydroxide (KOH), organic solution EDP, Tetramethylammonium hydroxide (TMAH) etc.; And dry etching mainly contains: the reactive ion etching (RIE) of chemical drying method plasma etching, physical dry plasma etching and chemical/physical combination and high density plasma etch (HDP).The degree of depth of preparing silicon cup groove is 5-50 μ m.
For barrier material 102, available material has: SiO
2, or porous SiO
2, or silicon nitride (Si
3n
4); Corresponding preparation method has sputter, or pulsed laser deposition (PLD), or metal-organic chemical vapor deposition equipment (MOCVD), or plasma activated chemical vapour deposition (PEVCD); The thickness of barrier material 102 is 200nm-2 μ m.
Step 2: prepare hearth electrode 103 on barrier material 102.The available material of hearth electrode 103 has: platinum (Pt), or gold (Au), or strontium lanthanum manganese oxide (LSMO), or lanthanum-strontium-cobalt-oxygen (LSCO), or yttrium barium copper oxide (YBaCuO) etc.; The thickness of hearth electrode 103 is 10nm-1 μ m; The preparation method of hearth electrode 103 has sputter, or PLD.
Step 3: prepare pyroelectricity material 104 on hearth electrode 103 in silicon cup groove.The available material of pyroelectricity material 104 mainly contains: lead lanthanum zirconate titanate (PLZT, (Pb, La) (Zr, Ti) O
3), or lead zirconate titanate (Pb (Zr
1-xti
x) O
3), or barium strontium titanate (BST), or Kynoar (PVDF), or PVDF/PZT composite material, or PVDF/BST composite material, or thin polymer film (PVF2) etc.; The thickness of pyroelectricity material 104 is identical with silicon cup depth of groove in step 1.The preparation method of pyroelectricity material 104 has: silk screen printing, electrophoretic deposition, plating or the tape casting etc.; Pyroelectricity material 104 to preparation waits static pressure to increase its surface smoothness.
Step 4: pyroelectricity material 104 high temperature sinterings become porcelain.Conventional sintering furnace mainly contains: continuous mesh belt type sintering furnace (1150 ℃), push-down sintering furnace (1250 ℃), steel band sintering furnace (1000 ℃), pipe type sintering furnace etc.; Sintering temperature is 650-1000 ℃, insulation 0.5-3h.
Step 5: form separator figure at silicon cup recess edge photoetching isolated material, then hot setting forms barrier layer 105.Owing to the present invention is based on micromechanical process, utilize photoetching technique, the multiple barrier material that the isolated material of therefore selecting and above-mentioned steps 1 have been narrated and preparation method understand different, and this is also innovative point of the present invention.Isolated material can be selected: photaesthesia macromolecule polymer material or high sensitivity electron beam adhesive or resistance to acids and bases protection glue or polyimide resin PI etc.; By a series of lithographic process steps such as gluing, post bake, exposure, development, rear bakings, form required separator figure, be to form around silicon cup recess edge separator figure, electric insulation is realized mutual close upper/lower electrode in Fig. 1 in this barrier layer, makes in top electrode 106(accompanying drawing 2) can draw smoothly.Finally detector cells is put into baking oven and carry out hot setting, temperature 150-250 ℃, insulation 0.5-2h, the thickness of separator is 5-15 μ m.
Step 6: draw top electrode 106 above pyroelectricity material 104 and separator 105.Material and the preparation method of top electrode 106 are identical in step 2, and the thickness of top electrode 106 is 10nm-1 μ m.
Preparation method's embodiment is as follows more specifically:
(1) preliminary treatment before silicon substrate 101 thermal oxidations in thickness 300 μ m (100) crystal orientation: first silicon chip is put into concentrated sulfuric acid heating and boil 30min, then silicon chip is put into concentrated hydrochloric acid continuation heating and is boiled 30min, then use hydrofluoric acid clean 10min, finally with plasma water, rinse, nitrogen is silicon wafer blow-drying.Pretreated silicon substrate 101 is put into the three pipe diffusion furnace thermal oxidation deposition layer of silicon dioxide films 102 of 1100 ℃, thickness 0.5 μ m.As shown in accompanying drawing 3a.In the present embodiment, the concentration of the concentrated sulfuric acid is 71.5%, and the concentration of concentrated hydrochloric acid is 77.7%, and the concentration of the concentrated sulfuric acid and the concentrated sulfuric acid can be also other approximation, and the present invention is not limited to the concrete concentration numerical value of sulfuric acid and hydrochloric acid.
(2), at front side of silicon wafer photoetching corrosion window, preparation BOE solution, puts into BOE solution by the Si sheet made from photoresist mask and soaks 15 minutes, obtains with SiO
2corrosion window for mask.
(3) the TMAH solution of configuration 25wt.% carries out anisotropic etch to substrate, in the ratio of 3g/100ml, adds (NH
4) S
2o
8, solution temperature is 78 ℃, it is 30 μ m silicon cup grooves that etching time 1h30min forms the degree of depth.As shown in accompanying drawing 3b.
(4) repeating step (1), the silica membrane 102 of deposit thickness 1 μ m.As shown in accompanying drawing 3c.
(5) with acetone, alcohol sonic oscillation cleaning silicon chip, by photoetching processes such as gluing, post bake, exposure, development, rear bakings, produce the hearth electrode graph of a correspondence of detector, then by Deposited By Dc Magnetron Sputtering Pt/Ti hearth electrode 103, thickness of electrode is 130nm.As shown in accompanying drawing 3d.
(6) in silicon cup groove and above hearth electrode, the method with electrophoretic deposition deposits PZT pyroelectricity thick-film material 104, then thick-film material is dried, and then waits static pressure, and finally in tube furnace, high temperature sintering becomes pottery, 750 ℃ of temperature, insulation 1h.As shown in accompanying drawing 3e.
(7) conventional cleaning silicon chip surface, on surface, coat photoresist, glue type is AZ9260, rotating speed: 4000-5000r/min, hot plate post bake: 100 ℃/10min, then make the barrier layer figure around silicon cup recess edge by lithography according to the photoetching process in above-mentioned steps (5).Finally in baking oven, carry out hot setting, 220 ℃ of temperature, insulation 1h, being prepared into thickness is the barrier layer 105 of 7-8 μ m.As shown in accompanying drawing 3f.
(8) photoetching process and the magnetically controlled DC sputtering technique that repeat in above-mentioned steps (5) are prepared Pt/Ti top electrode 106.Thickness of electrode is 130nm.As shown in accompanying drawing 3g.
Above-mentioned pyroelectricity thick film detector is carried out to pyroelectric property test, and test result as shown in Figure 4.
Accompanying drawing 4 is pyroelectricity voltage response curves of pyroelectricity thick film detector, and the actual curve recording 108 meets well with simulation curve 107, and curve is smoother and interference signal is less.By the pyroelectric coefficient calculating, be 1.05 * 10
-8ccm
-2k
-1, show that prepared detector pyroelectric property is good.
Claims (1)
1. the preparation method of thick-film material electronic devices and components, is characterized in that, comprises the steps:
Step 1: prepare substrate [101] and barrier material [102]:
(1.1) preliminary treatment before silicon substrate [101] thermal oxidation in thickness 300 μ m (100) crystal orientation: first silicon chip is put into concentrated sulfuric acid heating and boil 30min, then silicon chip is put into concentrated hydrochloric acid continuation heating and is boiled 30min, then use hydrofluoric acid clean 10min, finally with plasma water, rinse, nitrogen dries up; Pretreated silicon substrate [101] is put into the three pipe diffusion furnace thermal oxidation deposition layer of silicon dioxide films of 1100 ℃, thickness 0.5 μ m;
(1.2) at front side of silicon wafer photoetching corrosion window;
(1.3) the TMAH solution of configuration 25wt.% carries out anisotropic etch to substrate, in the ratio of 3g/100ml, adds (NH
4) S
2o
8, solution temperature is 78 ℃, etching time 1h30min, and forming the degree of depth is 30 μ m silicon cup grooves;
(1.4) repeating step (1.1), the silica membrane of deposit thickness 1 μ m;
Step 2: with acetone, alcohol sonic oscillation cleaning silicon chip, by photoetching processes such as gluing, post bake, exposure, development, rear bakings, produce the hearth electrode graph of a correspondence of detector, then by Deposited By Dc Magnetron Sputtering Pt/Ti hearth electrode 103, thickness of electrode is 130nm;
Step 3: with the method deposition PZT pyroelectricity material [104] of electrophoretic deposition, then thick-film material is dried in silicon cup groove and above hearth electrode, then wait static pressure;
Step 4: high temperature sintering sinters pottery into pyroelectricity material [104] in tube furnace, 750 ℃ of temperature, insulation 1h;
Step 5: conventional cleaning silicon chip surface, on surface, coat photoresist, rotating speed: 4000-5000r/min, hot plate post bake: 100 ℃/10min, then make the barrier layer figure around silicon cup recess edge by lithography; Finally in baking oven, carry out hot setting, 220 ℃ of temperature, insulation 1h, is prepared into the separator that thickness is 7-8 μ m [105];
Step 6: adopt photoetching process and magnetically controlled DC sputtering technique to prepare Pt/Ti top electrode [106], thickness of electrode is 130nm.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1812149A (en) * | 2005-12-05 | 2006-08-02 | 浙江大学 | Porous composite thick film pyroelectric material and preparative method |
| CN101110438A (en) * | 2006-07-19 | 2008-01-23 | 育霈科技股份有限公司 | Structure of image sensor module and a method for manufacturing of wafer level package |
| CN101419092A (en) * | 2008-12-02 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Pyroelectric infrared detector for planarization thermal isolation structure and method for making same |
| CN102290481A (en) * | 2011-09-01 | 2011-12-21 | 中国科学院半导体研究所 | Silicon detector structure with wide spectral response range and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1812149A (en) * | 2005-12-05 | 2006-08-02 | 浙江大学 | Porous composite thick film pyroelectric material and preparative method |
| CN101110438A (en) * | 2006-07-19 | 2008-01-23 | 育霈科技股份有限公司 | Structure of image sensor module and a method for manufacturing of wafer level package |
| CN101419092A (en) * | 2008-12-02 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | Pyroelectric infrared detector for planarization thermal isolation structure and method for making same |
| CN102290481A (en) * | 2011-09-01 | 2011-12-21 | 中国科学院半导体研究所 | Silicon detector structure with wide spectral response range and production method thereof |
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