CN102842530A - Thick film material electronic component and preparation method thereof - Google Patents
Thick film material electronic component and preparation method thereof Download PDFInfo
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- CN102842530A CN102842530A CN2012102903155A CN201210290315A CN102842530A CN 102842530 A CN102842530 A CN 102842530A CN 2012102903155 A CN2012102903155 A CN 2012102903155A CN 201210290315 A CN201210290315 A CN 201210290315A CN 102842530 A CN102842530 A CN 102842530A
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Abstract
A thick film material electronic component belongs to the technical field of electronic materials and components. The pyroelectric substrate comprises a substrate with a groove, a barrier layer, a bottom electrode, a pyroelectric material and an upper electrode, wherein an isolation layer is arranged between the upper electrode and the bottom electrode, and the upper electrode spans the isolation layer and the bottom electrode below the isolation layer and is connected to the pyroelectric material. The invention can effectively prevent short circuit between electrodes, so that the pyroelectric thick film detector obtains good performance, and the yield of the detector is improved.
Description
Technical field
The present invention relates to a kind of manufacturing process of thick-film material electronic devices and components, relate in particular to a kind of unique film top electrode outbound course that is filled in thick-film material in the structure of silicon cup, belong to electronic material and components and parts technical field.
Background technology
At present, along with the unprecedented universal automaticity with production technology of electronic apparatus application is complete day by day, high-power, miniaturization, lightweight, multifunction, greenization and cost degradation become the developing direction of new electronic component inevitably.Thick film circuit that the thick-film material electronic devices and components are applied to more and thick film hybrid generally are meant through silk screen printing, operation such as burn till and on substrate, make interconnecting lead, resistance, electric capacity, inductance etc., satisfy the circuit unit of certain functional requirement.The thick film hybrid of thick-film material electronic devices and components made is having its irreplaceability aspect high temperature, high pressure, the high-power circuit.
The thick-film material electronic devices and components are to produce along with the generation of thick-film electronic material and thick film technology, develop along with its development.The thick film technology that the thick-film material electronic devices and components are used is that the sub-material of current collection, polylaminate wiring technique, surface micro assembling and plane integrated technology are in the microelectric technique of one.Satisfying aspect most of Electronic Packaging and the interconnection requirements, thick film technology is with a long history.Particularly in military, the Aerospace Products and industrial portable mobile wireless product in enormous quantities of highly reliable small lot, this technology has all been given play to significant advantage.
Thick-film material is widely used, and the electric capacity in the thick-film electronic components and parts of its preparation adopts slab construction more.The main composition of slab construction is: substrate/electrode layer/middle insulated medium layer/electrode layer.As make a kind of thick-film electroluminescent device of studying electroluminescence characters, the entire device structure is ito transparent electrode/interior electrode/insulating thick film layer/luminescent layer/ito transparent electrode; And for example a kind of silicon micro-ultrasonic transducer, its structure are Si substrate/SiO
2Layer/adhesive linkage (epoxy glue)/bottom electrode/piezoelectric layer/top electrode.Upper and lower electrode layer and thick middle membrane layers are arranged in the above-mentioned example.Its basic principle is to introduce certain through electrode to trigger as light triggers or the electricity triggering, the thick middle membrane layers is changed and obtains certain performance.This shows that the quality of thick-film material and electrode is most important to Effect on Performance in the above-mentioned thick-film material electronic devices and components.Therefore, the good thick-film material electronic devices and components of processability must obtain high performance thick-film material and high-quality electrode.
Traditional thick-film material electronic devices and components manufacture method is after substrate surface prepares the pyroelectricity thick film, and through waiting static pressure to obtain smooth thick-film material, extraction electrode polarizes to thick film then, obtains to have the thick-film material of certain performance again.But said method has two main defectives: defective one is because thick-film material at substrate surface, when static pressure such as process, makes the thick film cracking easily; Defective two electrodes are difficult to draw.Because the thickness of thick-film material reaches tens of microns, promptly there are tens of microns difference in height in thick film surface and substrate surface, with traditional legal system power backup utmost point of peeling off, at first be the photoresist that is difficult to find thickness like this, and craft precision are difficult to assurance; Next is that the electrode for preparing is thinner relatively; The domatic height of thick-film material and steep possibly have only extremely thin electrode even not have electrode domatic during the preparation top electrode, makes the electrode of thick film surface and the electrode of substrate surface be difficult to couple together; Cause lead rupture, have a strong impact on the quality of electrode.The traditional preparation process electrode also can adopt the method for welding lead, but for the compatibility of micromechanics integrated technique, the preparation of electrode is general to prepare with peeling off method, and does not adopt welding lead.
Therefore in order to solve above two problem; Can take following method (shown in accompanying drawing 1): make substrate with Si earlier; Preparation barrier layer 002 then prepares the silicon cup groove in the front on Si substrate 001, and the silicon cup groove has certain gradient; Utilize photoetching technique and sputtering technology then, form hearth electrode figure and sputter hearth electrode 003.Then in silicon cup, deposit pyroelectricity material 004; Sputtered film re-uses the dual surface lithography technology as top electrode 005 on the pyroelectricity probe unit, and is corresponding with the front probe unit; Mutual each other disjunct unit pattern of alignment at the back side of substrate; Use the Si substrate at the wet etching probe unit back side, make that each probe unit is unsettled, form thermal insulation structure.
The Infrared Detectors that said method is processed has solved in the problem that waits thick-film material cracking under the static pressure situation with front etch silicon cup groove, but failing well to solve electrode draws problem.Because thick-film material 004 directly contacts with Si substrate 001; When high temperature sintering, there is the phase counterdiffusion; The performance of grievous injury thick-film material, the hearth electrode 003 of therefore preparation before the deposition of thick membrane material 004 in silicon cup must cover whole silicon cup groove with its two isolation.Yet the hearth electrode 003 that covers whole silicon cup bottom portion of groove and the top electrode 005 of silicon cup recess edge are very near (shown in accompanying drawing 1); And each other near upper/lower electrode can easy short circuit puncture when the polarization experiment; Have a strong impact on the quality of thick-film material and metal electrode; The performance of infringement pyroelectricity thick film detector causes the detector rate of finished products low excessively.
Therefore, how in preparation pyroelectricity thick film detector process, to prevent that the upper/lower electrode short circuit from puncturing, thereby guarantee the quality of thick-film material and metal electrode, improve the quality and the performance of detector, improve rate of finished products, solve the electrode problem of drawing and seem particularly important.
Summary of the invention
Technical problem to be solved by this invention is that a kind of thick-film material electronic devices and components and preparation method who effectively prevents the conducting of upper/lower electrode is provided.
The technical scheme that the present invention solve the technical problem employing is; The thick-film material electronic devices and components; Comprise the substrate, barrier layer, hearth electrode, pyroelectricity material and the top electrode that have groove, between top electrode and hearth electrode, be provided with separator; Top electrode is crossed over the hearth electrode of separator and separator below, is connected to pyroelectricity material.
Said separator ring-type is arranged at the recess edge of substrate.The material of said separator is different from the material on barrier layer.The material of said separator is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on said barrier layer is SiO
2Or Si
3N
4
The preparation method of thick-film material electronic devices and components comprises the steps:
Step 1: preparation substrate and barrier material;
Step 2: on barrier material, prepare hearth electrode;
Step 3: preparing pyroelectricity material in the silicon cup groove on the hearth electrode;
Step 4: the pyroelectricity material high temperature sintering becomes porcelain;
Step 5: form the separator figure in the photoetching of silicon cup recess edge, hot setting forms separator then;
Step 6: above pyroelectricity material and separator, draw top electrode.
The present invention can effectively prevent interelectrode short circuit, makes pyroelectricity thick film detector obtain good performance, and has improved the rate of finished products of detector.The present invention has following advantage and good effect: micro electronmechanical photoetching process is ripe, can obtain various required barrier layer figures; The precision of figure is very high, and machining accuracy can reach several microns, can satisfy high density, high meticulous preparation requirement; Technology is simple, good reproducibility.
Description of drawings
Fig. 1. the structural representation of the pyroelectric infrared detector of prior art
Wherein, the 001st, Si substrate, the 002nd, SiO
2Film barrier layer, the 003rd, hearth electrode, the 004th, heat-sensitive material, the 005th, top electrode;
Fig. 2. the structural representation of embodiments of the invention 1
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer, the 103rd, hearth electrode, the 104th, pyroelectricity material, the 105th, AZ9260 separator, the 106th, top electrode;
Fig. 3. utilize the process chart of the prepared pyroelectricity thick film detector of the present invention
Fig. 3 a prepares SiO on the Si substrate
2The sketch map of film barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer;
Fig. 3 b is the sketch map of preparation silicon cup groove on the Si substrate
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer;
Fig. 3 c is deposition SiO
2The sketch map of film barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer;
Fig. 3 d is at SiO
2The sketch map of preparation Pt/Ti hearth electrode on the film barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer, the 103rd, the Pt/Ti hearth electrode;
Fig. 3 e is the sketch map of deposition PZT pyroelectricity thick film on the Pt/Ti hearth electrode
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer, the 103rd, the Pt/Ti hearth electrode,
The 104th, pyroelectricity material;
Fig. 3 f is the sketch map for preparing the AZ9260 barrier layer in the silicon cup recess edge
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer, the 103rd, the Pt/Ti hearth electrode,
The 104th, pyroelectricity material, the 105th, AZ9260 separator;
Fig. 3 g is the sketch map of preparation Pt/Ti top electrode on PZT pyroelectricity thick film and AZ9260 barrier layer
Wherein, the 101st, Si substrate, the 102nd, SiO
2Film barrier layer, the 103rd, the Pt/Ti hearth electrode,
The 104th, pyroelectricity material, the 105th, AZ9260 barrier layer, the 106th, Pt/Ti top electrode;
Fig. 4. utilize the pyroelectricity voltage response curves figure of the prepared pyroelectricity thick film detector of the present invention
Wherein, the 107th, pyroelectricity voltage analog curve, the 108th, pyroelectricity voltage tester curve;
Embodiment
The present invention is based on micromechanical process, utilizes photoetching technique, adopts a kind of isolated material to carve required figure in the silicon cup recess edge, and hot setting forms the barrier layer then, draws top electrode through photoetching technique and sputtering technology at last.Above-mentioned this barrier layer is between hearth electrode, thick-film material and the top electrode, can not only draw top electrode cleverly, and effectively prevents the conducting of upper/lower electrode, and technology is simple, precision is controlled, and the device performance of processing is good.
As embodiment 1, the thick-film material electronic devices and components are pyroelectricity thick film detector, and structural representation is as shown in Figure 2.It comprises substrate 101, barrier layer 102, hearth electrode 103, pyroelectricity material 104 and the top electrode 106 that has groove; Between top electrode 106 and hearth electrode 103; Be provided with separator 105, top electrode is crossed over the hearth electrode of separator 105 and separator 105 belows, is connected to pyroelectricity material 104.Said separator 105 ring-types are arranged at the recess edge of substrate 101, and separator 105 covers the part of the hearth electrode 103 and the pyroelectricity material 104 at recess edge place, and top electrode 106 and hearth electrode 103 are isolated fully.
The material of said separator 105 is different from the material on barrier layer 102.The material of said separator 105 is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on said barrier layer 102 is SiO
2Or Si
3N
4
The present invention also provides the preparation method of thick-film material electronic devices and components, comprises following sequential steps:
Step 1: obtain substrate 101 and barrier material 102.Substrate forms the problem that groove has solved pyroelectricity thick-film material cracking, but must have desired to the groove that forms.Require groove to have certain gradient; If because the domatic near normal of groove; Possibly have only thin electrode extremely even not have electrode in that groove is domatic during hearth electrode in preparation, make the hearth electrode of groove floor just can't couple together with the hearth electrode of substrate surface, electrode will break apart; The quality of grievous injury electrode, there is certain gradient in the groove that therefore requires backing material to form.Silicon chip not only satisfies above-mentioned requirements, and body silicon technology technology is simple, and is repeatable high, and good with the thick-film technique compatibility, selects silicon chip for use based on these advantage backing materials 101.The thickness of substrate 101 is 0.3-1mm.
Corrosion or dry etching silicon cup groove.Obtaining to have the method that the groove of certain slope selects for use has: corrosion or dry etching.Corroding method forms the used anisotropic etchant of silicon cup groove and mainly contains: potassium hydroxide (KOH), organic solution EDP, TMAH (TMAH) etc.; And dry etching mainly contains: the reactive ion etching (RIE) of chemical drying method plasma etching, physical dry plasma etching and chemical/physical combination and high density plasma etch (HDP).The degree of depth of preparation silicon cup groove is 5-50 μ m.
For barrier material 102, available material has: SiO
2, or porous SiO
2, or silicon nitride (Si
3N
4); Corresponding preparation method has sputter, or pulsed laser deposition (PLD), or metal-organic chemical vapor deposition equipment (MOCVD), or plasma activated chemical vapour deposition (PEVCD); The thickness of barrier material 102 is 200nm-2 μ m.
Step 2: preparation hearth electrode 103 on barrier material 102.Hearth electrode 103 available materials have: platinum (Pt), or gold (Au), or strontium lanthanum manganese oxide (LSMO), or lanthanum-strontium-cobalt-oxygen (LSCO), or yttrium barium copper oxide (YBaCuO) etc.; The thickness of hearth electrode 103 is 10nm-1 μ m; The preparation method of hearth electrode 103 has sputter, or PLD.
Step 3: preparation pyroelectricity material 104 in silicon cup groove on the hearth electrode 103.Pyroelectricity material 104 available materials mainly contain: lead lanthanum zirconate titanate (PLZT, (Pb, La) (Zr, Ti) O
3), or lead zirconate titanate (Pb (Zr
1-xTi
x) O
3), or barium strontium titanate (BST), or Kynoar (PVDF), or the PVDF/PZT composite material, or the PVDF/BST composite material, or thin polymer film (PVF2) etc.; The silicon cup depth of groove is identical in the thickness of pyroelectricity material 104 and the step 1.The preparation method of pyroelectricity material 104 has: silk screen printing, electrophoretic deposition, plating or The tape casting etc.; Pyroelectricity material 104 to preparation waits static pressure to increase its surface smoothness.
Step 4: pyroelectricity material 104 high temperature sinterings become porcelain.Sintering furnace commonly used mainly contains: continuous mesh belt type sintering furnace (1150 ℃), push-down sintering furnace (1250 ℃), steel band sintering furnace (1000 ℃), tubular type sintering furnace etc.; Sintering temperature is 650-1000 ℃, insulation 0.5-3h.
Step 5: form the separator figure at silicon cup recess edge photoetching isolated material, hot setting forms barrier layer 105 then.Owing to the present invention is based on micromechanical process, utilize photoetching technique, multiple barrier material that isolated material of therefore selecting for use and above-mentioned steps 1 have been narrated and preparation method understand different, and this also is an innovative point of the present invention.Isolated material can be selected for use: photaesthesia macromolecule polymer material or high sensitivity electron beam adhesive or resistance to acids and bases protection glue or polyimide resin PI etc.; Through a series of lithographic process steps such as gluing, post bake, exposure, development, back bakings; Form required separator figure; Promptly be to form around silicon cup recess edge separator figure; This barrier layer among Fig. 1 each other near upper/lower electrode realize electric insulation, top electrode 106 (in the accompanying drawing 2) can be drawn smoothly.Put into baking oven to detector cells at last and carry out hot setting, temperature 150-250 ℃, insulation 0.5-2h, the thickness of separator is 5-15 μ m.
Step 6: above pyroelectricity material 104 and separator 105, draw top electrode 106.The material of top electrode 106 is identical in step 2 with the preparation method, and the thickness of top electrode 106 is 10nm-1 μ m.
Preparation method's embodiment is following more specifically:
(1) preliminary treatment before silicon substrate 101 thermal oxidations in thickness 300 μ m (100) crystal orientation: put into concentrated sulfuric acid heating to silicon chip earlier and boil 30min; Then silicon chip is put into concentrated hydrochloric acid continuation heating and is boiled 30min; Use hydrofluoric acid clean 10min then, with the plasma water flushing, nitrogen dries up silicon chip at last.Put into 1100 ℃ three pipe diffusion furnace thermal oxidation deposition layer of silicon dioxide films 102, thickness 0.5 μ m to pretreated silicon substrate 101.Shown in accompanying drawing 3a.In the present embodiment, the concentration of the concentrated sulfuric acid is 71.5%, and the concentration of concentrated hydrochloric acid is 77.7%, and the concentration of the concentrated sulfuric acid and the concentrated sulfuric acid also can be other approximation, and the present invention is not limited to the concrete concentration numerical value of sulfuric acid and hydrochloric acid.
(2) at the positive photoetching corrosion window of silicon chip, preparation BOE solution is put into BOE solution with the Si sheet of making mask with photoresist and was soaked 15 minutes, obtains with SiO
2Corrosion window for mask.
(3) the TMAH solution of configuration 25wt.% carries out anisotropic etch to substrate, in the ratio adding (NH of 3g/100ml
4) S
2O
8, solution temperature is 78 ℃, it is 30 μ m silicon cup grooves that etching time 1h30min forms the degree of depth.Shown in accompanying drawing 3b.
(4) repeating step (1), the silica membrane 102 of deposit thickness 1 μ m.Shown in accompanying drawing 3c.
(5) with acetone, alcohol sonic oscillation cleaning silicon chip; Produce the hearth electrode graph of a correspondence of detector through photoetching processes such as gluing, post bake, exposure, development, back bakings; Through magnetically controlled DC sputtering deposition Pt/Ti hearth electrode 103, thickness of electrode is 130nm then.Shown in accompanying drawing 3d.
(6) method with electrophoretic deposition deposits PZT pyroelectricity thick-film material 104 in the silicon cup groove and above the hearth electrode, then dries thick-film material, waits static pressure then, and high temperature sintering becomes pottery in tube furnace at last, 750 ℃ of temperature, insulation 1h.Shown in accompanying drawing 3e.
(7) conventional cleaning silicon chip is surperficial; Photoresist on surfaces coated, glue type are AZ9260, rotating speed: 4000-5000r/min; Hot plate post bake: 100 ℃/10min, make barrier layer figure by lithography according to the photoetching process in the above-mentioned steps (5) then around the silicon cup recess edge.In baking oven, carry out hot setting at last, 220 ℃ of temperature, insulation 1h, being prepared into thickness is the barrier layer 105 of 7-8 μ m.Shown in accompanying drawing 3f.
(8) photoetching process and the magnetically controlled DC sputtering prepared Pt/Ti top electrode 106 in the repetition above-mentioned steps (5).Thickness of electrode is 130nm.Shown in accompanying drawing 3g.
Above-mentioned pyroelectricity thick film detector is carried out the pyroelectric property test, and test result is shown in accompanying drawing 4.
Accompanying drawing 4 is pyroelectricity voltage response curves of pyroelectricity thick film detector, and the actual curve that records 108 meets well with simulation curve 107, and curve is smoother and interference signal is less.Through the pyroelectric coefficient that calculates is 1.05 * 10
-8Ccm
-2K
-1, show that prepared detector pyroelectric property is good.
Claims (9)
1. thick-film material electronic devices and components; Comprise the substrate [101], barrier layer [102], hearth electrode [103], pyroelectricity material [104] and the top electrode [106] that have groove; It is characterized in that, between top electrode [106] and hearth electrode [103], be provided with separator [105]; Top electrode is crossed over the hearth electrode of separator [105] and separator [105] below, is connected to pyroelectricity material [104].
2. thick-film material electronic devices and components as claimed in claim 1 is characterized in that, said separator [105] ring-type is arranged at the recess edge of substrate [101].
3. thick-film material electronic devices and components as claimed in claim 1 is characterized in that, the material of said separator [105] is different from the material of barrier layer [102].
4. thick-film material electronic devices and components as claimed in claim 1 is characterized in that, the material of said separator [105] is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on said barrier layer [102] is SiO
2Or Si
3N
4
5. the preparation method of thick-film material electronic devices and components as claimed in claim 1 is characterized in that, comprises the steps:
Step 1: preparation substrate [101] and barrier material [102];
Step 2: go up preparation hearth electrode [103] at barrier material [102];
Step 3: upward prepare pyroelectricity material [104] in the silicon cup groove at hearth electrode [103];
Step 4: pyroelectricity material [104] high temperature sintering becomes porcelain;
Step 5: form the separator figure in the photoetching of silicon cup recess edge, hot setting forms separator [105] then;
Step 6: draw top electrode [106] at pyroelectricity material [104] and separator [105] top.
6. the preparation method of thick-film material electronic devices and components as claimed in claim 5 is characterized in that, said step 1 comprises:
(1.1) preliminary treatment before silicon substrate [101] thermal oxidation in thickness 300 μ m (100) crystal orientation: put into concentrated sulfuric acid heating to silicon chip earlier and boil 30min; Then silicon chip is put into concentrated hydrochloric acid continuation heating and is boiled 30min; Use hydrofluoric acid clean 10min then, with the plasma water flushing, nitrogen dries up at last; Put into 1100 ℃ three pipe diffusion furnace thermal oxidation deposition layer of silicon dioxide films, thickness 0.5 μ m to pretreated silicon substrate [101];
(1.2) at the positive photoetching corrosion window of silicon chip;
(1.3) the TMAH solution of configuration 25wt.% carries out anisotropic etch to substrate, in the ratio adding (NH of 3g/100ml
4) S
2O
8, solution temperature is 78 ℃, etching time 1h30min, and forming the degree of depth is 30 μ m silicon cup grooves;
(1.4) repeating step (1.1), the silica membrane of deposit thickness 1 μ m.
7. the preparation method of thick-film material electronic devices and components as claimed in claim 5 is characterized in that, said step 2,3,4 is:
Step 2: with acetone, alcohol sonic oscillation cleaning silicon chip; Produce the hearth electrode graph of a correspondence of detector through photoetching processes such as gluing, post bake, exposure, development, back bakings; Through magnetically controlled DC sputtering deposition Pt/Ti hearth electrode 103, thickness of electrode is 130nm then;
Step 3: with the method deposition PZT pyroelectricity material [104] of electrophoretic deposition, then dry thick-film material in the silicon cup groove and above the hearth electrode, wait static pressure then;
Step 4: high temperature sintering to pyroelectricity material [104] sinters pottery in tube furnace, 750 ℃ of temperature, insulation 1h.
8. the preparation method of thick-film material electronic devices and components as claimed in claim 5 is characterized in that, said step 5 is:
Conventional cleaning silicon chip surface, photoresist on surfaces coated, rotating speed: 4000-5000r/min, hot plate post bake: 100 ℃/10min, make barrier layer figure then by lithography around the silicon cup recess edge; In baking oven, carry out hot setting at last, 220 ℃ of temperature, insulation 1h is prepared into the separator that thickness is 7-8 μ m [105].
9. the preparation method of thick-film material electronic devices and components as claimed in claim 5 is characterized in that, said step 6 is: adopt photoetching process and magnetically controlled DC sputtering prepared Pt/Ti top electrode [106], thickness of electrode is 130nm.
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| CN103137847A (en) * | 2013-01-25 | 2013-06-05 | 四川汇源科技发展股份有限公司 | Temperature sensitive material electronic component and preparation method thereof |
| CN105609169A (en) * | 2015-12-23 | 2016-05-25 | 深圳顺络电子股份有限公司 | High-frequency conductor and manufacturing method thereof |
| CN110289825A (en) * | 2019-07-29 | 2019-09-27 | 贵州中科汉天下微电子有限公司 | A kind of thin film bulk acoustic wave resonator and its manufacturing method, filter and duplexer |
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