CN103137847A - Temperature sensitive material electronic component and preparation method thereof - Google Patents
Temperature sensitive material electronic component and preparation method thereof Download PDFInfo
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- CN103137847A CN103137847A CN2013100288476A CN201310028847A CN103137847A CN 103137847 A CN103137847 A CN 103137847A CN 2013100288476 A CN2013100288476 A CN 2013100288476A CN 201310028847 A CN201310028847 A CN 201310028847A CN 103137847 A CN103137847 A CN 103137847A
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Abstract
The invention provides a temperature sensitive material electronic component and a preparation method thereof and belongs to the technical field of electronic materials and components. The temperature sensitive material electronic component comprises a substrate with a groove, a barrier layer, a bottom electrode, a pyroelectric material and a top electrode. A separating layer is arranged between the top electrode and the bottom electrode. The top electrode is connected with the pyroelectric material after striding the separating layer and the bottom electrode arranged below the separating layer. The temperature sensitive material electronic component and the preparation method thereof have the advantages that based on the foundation that micro-electro-mechanical photolithography technique is mature, various barrier layer patterns required can be obtained; accuracy of the patterns is high and machining accuracy reaches a plurality of microns so that preparation requirements for high density and high accuracy are satisfied; the component is simple in technology, good in repeatability and capable of effectively preventing short circuits among the electrodes so that good performance of pyroelectric thick film detectors are obtained and finished product rate of the detectors is improved.
Description
Technical field
The invention belongs to the electronically materials and component technical field, relate to a kind of manufacturing process of temperature-sensitive material electronic devices and components, relate in particular to the top electrode outbound course of a kind of uniqueness that is filled in the temperature-sensitive material in groove structure.
Background technology
At present, along with unprecedented universal and automaticity production technology of electronic apparatus application is increasingly complete, high-power, miniaturization, lightweight, multifunction, greenization and cost degradation inevitably become the developing direction of new electronic component.The thick film circuit that the temperature-sensitive material electronic devices and components are applied to more and thick film hybrid generally refer to by silk screen printing, the operation such as burn till make interconnecting lead, resistance, electric capacity, inductance etc. on substrate, satisfy the circuit unit of certain functional requirement.The hybrid circuit of temperature-sensitive material electronic devices and components made is having its irreplaceability aspect high temperature, high pressure, high-power circuit.
The temperature-sensitive material electronic devices and components are to produce along with the generation of electronic material and thick film technology, along with its development.The thick film technology that the temperature-sensitive material electronic devices and components use is that set electron material, polylaminate wiring technique, surperficial little assembling and Planar integration technology are in the microelectric technique of one.Satisfying aspect most of Electronic Packaging and interconnection require, thick film technology is with a long history.Particularly in military, the Aerospace Products and industrial portable mobile wireless product in enormous quantities of highly reliable small lot, this technology has all been given play to significant advantage.
Temperature-sensitive material is widely used, and the electric capacity in the electronic devices and components of its preparation adopts slab construction more.The main composition of slab construction is: substrate/electrode layer/middle insulated medium layer/electrode layer.As make a kind of thick-film electroluminescent device of studying electroluminescence characters, whole device architecture is ito transparent electrode/interior electrode/insulating thick film layer/luminescent layer/ito transparent electrode; A kind of silicon micro-ultrasonic transducer and for example, its structure is Si substrate/SiO
2Layer/adhesive linkage (epoxy glue)/bottom electrode/piezoelectric layer/top electrode.Upper and lower electrode layer and thick middle membrane layers are arranged in above-mentioned example.Its basic principle is to introduce certain by electrode to trigger as light triggering or electricity triggering, makes medium temperature sensitive material layer change and obtain certain performance.This shows, in said temperature sensitive material electronic devices and components, the quality of temperature-sensitive material and electrode is most important on the impact of performance.Therefore, the good temperature-sensitive material electronic devices and components of processability must obtain high performance temperature-sensitive material and high-quality electrode.
Traditional temperature-sensitive material electronic devices and components manufacture method is after substrate surface prepares the pyroelectricity thick film, then obtains smooth thick-film material by hydraulic pressure, and then extraction electrode, polarize to material, obtains to have the thick-film material of certain performance.But said method has two main defectives: defective one at substrate surface, through hydraulic pressure the time, easily makes the thick-film material cracking due to thick-film material; Defective two electrodes are difficult to draw.Because the thickness of thick-film material reaches tens of microns, namely there are the difference in height of tens of microns in material surface and substrate surface, prepare electrode with traditional stripping method, are at first the photoresists that is difficult to find thickness like this, and craft precision is difficult to assurance; Next is that the electrode for preparing is relatively thin, the domatic height of thick-film material and steep may only have extremely thin electrode even there is no electrode domatic during the preparation top electrode, makes the electrode on thick-film material surface and the electrode of substrate surface be difficult to couple together, cause lead rupture, have a strong impact on the quality of electrode.Tradition prepare electrode and also can adopt the method for welding lead, but for the compatibility of micromechanics integrated technique, the preparation of electrode generally prepares with stripping method, and does not adopt welding lead.
Therefore in order to solve the problem of above two, can take following methods (as shown in Figure 1): first make substrate with Si, preparation barrier layer 002 on Si substrate 001, then prepare groove in the front, groove has certain gradient, then utilize photoetching technique and sputtering technology, form hearth electrode figure and sputter hearth electrode 003.Then deposit pyroelectricity material 004 in silicon cup, sputtered film is as top electrode 005 on the pyroelectric detect unit, re-use the dual surface lithography technology, corresponding with the front probe unit, at the back side of substrate alignment mutual disjunct unit pattern each other, use the Si substrate at the wet etching probe unit back side, make each probe unit unsettled, form thermal insulation structure.
The Infrared Detectors that said method is made has solved the problem of thick-film material cracking in the hydraulic pressure situation with the front etch groove, but could not well solve electrode draws problem.Because thick-film material 004 directly contacts with Si substrate 001, there is the phase counterdiffusion when high temperature sintering, the performance of grievous injury thick-film material, the hearth electrode 003 that therefore prepares before deposition of thick membrane material 004 in Si must cover whole silicon cup groove both isolates it.Yet the hearth electrode 003 that covers whole silicon cup bottom portion of groove with the top electrode 005 of silicon cup recess edge very near (shown in Figure 1), and close upper/lower electrode can puncture when polarization experiment in easy short circuit mutually, have a strong impact on the quality of thick-film material and metal electrode, the performance of infringement pyroelectricity thick film detector causes the detector rate of finished products too low.
Therefore, how to prevent that the upper/lower electrode short circuit from puncturing in preparation pyroelectricity thick film detector process, thereby guarantee the quality of thick-film material and metal electrode, improve the quality and performance of detector, improve rate of finished products, solve the electrode problem of drawing and seem particularly important.
Summary of the invention
The object of the invention is to: for the problem of above-mentioned existence, provide a kind of temperature-sensitive material electronic devices and components and preparation method who effectively prevents the conducting of upper/lower electrode.
Temperature-sensitive material electronic devices and components provided by the present invention, comprise and be with reeded substrate, barrier layer, hearth electrode, pyroelectricity material and top electrode, between top electrode and hearth electrode, be provided with separator, top electrode is crossed over the hearth electrode below separator and separator, is connected to pyroelectricity material.Described separator ring-type is arranged at the recess edge of substrate.The material of described separator is different from the material on barrier layer.The material of described separator is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on described barrier layer is SiO
2Or Si
3N
4
Also propose its preparation method for temperature-sensitive material electronic devices and components provided by the present invention, comprise the steps:
Step 1: preparation substrate and barrier material;
Step 2: prepare hearth electrode on barrier material;
Step 3: preparing pyroelectricity material in the silicon cup groove on hearth electrode;
Step 4: the pyroelectricity material high temperature sintering becomes porcelain;
Step 5: form the separator figure in the photoetching of silicon cup recess edge, then hot setting forms separator;
Step 6: draw top electrode above pyroelectricity material and separator.
In sum, owing to having adopted technique scheme, the invention has the beneficial effects as follows: can effectively prevent interelectrode short circuit, make pyroelectricity thick film detector obtain good performance, and improve the rate of finished products of detector.Because micro electronmechanical photoetching process is ripe, can obtain various required barrier layer figures; The precision of figure is very high, and machining accuracy can reach several microns, can satisfy the preparation requirement of high density, fine; Technique is simple, good reproducibility.
Description of drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1. the structural representation of the pyroelectric infrared detector of prior art
Fig. 2. the structural representation of embodiments of the invention 1
Fig. 3. utilize the process chart of the prepared pyroelectricity thick film detector of the present invention
Fig. 3 a is the schematic diagram of preparation Si3N4 film barrier layer on the Si substrate
Fig. 3 b is the schematic diagram of preparation silicon cup groove on the Si substrate
Fig. 3 c is the schematic diagram of deposition Si3N4 film barrier layer
Fig. 3 d is the schematic diagram of preparation Ni/Cr hearth electrode on the Si3N4 film barrier layer
Fig. 3 e is the schematic diagram of deposition BST pyroelectricity thick film on the Ni/Cr hearth electrode
Fig. 3 f prepares the schematic diagram on AZ5214 barrier layer in the silicon cup recess edge
Fig. 3 g is the schematic diagram of preparation Al top electrode on BST pyroelectricity thick film and AZ5214 barrier layer
Fig. 4. utilize the pyroelectricity voltage response curves figure of the prepared pyroelectricity thick film detector of the present invention
Mark in figure: approach-leading foot, 001-Si substrate, 002-Si3N4 film barrier layer, 003-hearth electrode, 004-heat-sensitive material, 005-top electrode, 101-Si substrate, 102-Si3N4 film barrier layer, 103-Ni/Cr hearth electrode, 104-pyroelectricity material, 105-AZ5214 barrier layer, 106-Al top electrode, 107-pyroelectricity voltage analog curve, 108-pyroelectricity voltage tester curve.
Embodiment
The present invention is based on micromechanical process, utilizes photoetching technique, adopts a kind of isolated material to carve required figure in the silicon cup recess edge, and then hot setting forms the barrier layer, draws top electrode by photoetching technique and sputtering technology at last.Above-mentioned this barrier layer is between hearth electrode, thick-film material and top electrode, can not only draw cleverly top electrode, and effectively prevents the conducting of upper/lower electrode, and technique is simple, precision is controlled, and the device performance of making is good.
The preparation method of temperature-sensitive material electronic devices and components of the present invention comprises following sequential steps:
Step 1: obtain substrate 101 and barrier material 102.Substrate forms the problem that groove has solved pyroelectricity thick-film material cracking, but the groove requirement to some extent to forming.Require groove to have certain gradient, because if the domatic near normal of groove, may only have extremely thin electrode even there is no electrode groove is domatic in preparation during hearth electrode, make the hearth electrode of groove floor just can't couple together with the hearth electrode of substrate surface, electrode will break apart, the quality of grievous injury electrode, there is certain gradient in the groove that therefore requires backing material to form.Silicon chip not only satisfies above-mentioned requirements, and body silicon technology technique is simple, and is repeatable high, and good with the thick-film technique compatibility, selects silicon chip based on these advantage backing materials 101.The thickness of substrate 101 is 0.3-1mm.
The selected method of groove that acquisition has certain slope has: corrosion or dry etching.The method of corrosion forms silicon cup groove anisotropic etchant used and mainly contains: potassium hydroxide (KOH), organic solution EDP, Tetramethylammonium hydroxide (TMAH) etc.; And dry etching mainly contains: the reactive ion etching (RIE) of chemical drying method plasma etching, physical dry plasma etching and chemical/physical combination and high density plasma etch (HDP).The degree of depth of preparation silicon cup groove is 5-50 μ m.
For barrier material 102, available material has: SiO
2, or porous SiO
2, or silicon nitride (Si
3N
4); Corresponding preparation method has sputter, or pulsed laser deposition (PLD), or metal-organic chemical vapor deposition equipment (MOCVD), or plasma activated chemical vapour deposition (PEVCD); The thickness of barrier material 102 is 200nm-2 μ m.
Step 2: preparation hearth electrode 103 on barrier material 102.The available material of hearth electrode 103 has: nickel (Ni), or chromium (Cr), or platinum (Pt), or gold (Au), or strontium lanthanum manganese oxide (LSMO), or lanthanum-strontium-cobalt-oxygen (LSCO), or yttrium barium copper oxide (YBaCuO) etc.; The thickness of hearth electrode 103 is 10nm-1 μ m; The preparation method of hearth electrode 103 has sputter, or PLD.
Step 3: preparation pyroelectricity material 104 in silicon cup groove on hearth electrode 103.The available material of pyroelectricity material 104 mainly contains: lead lanthanum zirconate titanate (PLZT, (Pb, La) (Zr, Ti) O
3), or lead zirconate titanate (Pb (Zr
1-xTi
x) O
3), or barium strontium titanate (BST), or Kynoar (PVDF), or the PVDF/PZT composite material, or the PVDF/BST composite material, or thin polymer film (PVF
2) etc.; The thickness of pyroelectricity material 104 is identical with silicon cup depth of groove in step 1.The preparation method of pyroelectricity material 104 has: silk screen printing, electrophoretic deposition, plating or the tape casting etc.; Pyroelectricity material 104 to preparation waits static pressure to increase its surface smoothness.
Step 4: pyroelectricity material 104 high temperature sinterings become porcelain.Sintering furnace commonly used mainly contains: continuous mesh belt type sintering furnace (1150 ℃), push-down sintering furnace (1250 ℃), steel band sintering furnace (1000 ℃), pipe type sintering furnace etc.; Sintering temperature is 650-1000 ℃, insulation 0.5-3h.
Step 5: form the separator figure at silicon cup recess edge photoetching isolated material, then hot setting forms barrier layer 105.Owing to the present invention is based on micromechanical process, utilize photoetching technique, the multiple barrier material that the isolated material of therefore selecting and above-mentioned steps 1 have been narrated and preparation method understand different, and this is also innovative point of the present invention.Isolated material can be selected: photaesthesia macromolecule polymer material or high sensitivity electron beam adhesive or resistance to acids and bases protection glue or polyimide resin PI etc.; By a series of lithographic process steps such as gluing, post bake, exposure, development, rear bakings, form required separator figure, be namely to form around silicon cup recess edge separator figure, this barrier layer is realized electric insulation to mutual close upper/lower electrode in Fig. 1, and top electrode 106 can be drawn smoothly.At last detector cells is put into baking oven and carry out hot setting, temperature 150-250 ℃, insulation 0.5-2h, the thickness of separator is 5-15 μ m.
Step 6: draw top electrode 106 above pyroelectricity material 104 and separator 105.Material and the preparation method of top electrode 106 are identical in step 2, and the thickness of top electrode 106 is 10nm-1 μ m.
Embodiment:
(1) approximately preliminary treatment before silicon substrate 101 thermal oxidations in 500 μ m (100) crystal orientation of thickness: first silicon chip being put into concentration is that 70% concentrated sulfuric acid heating was boiled 30 minutes, then to put into concentration be that 70% concentrated hydrochloric acid continues heating and boiled 30 minutes to silicon chip, then used hydrofluoric acid clean 10 minutes, rinse with plasma water at last, nitrogen is silicon wafer blow-drying.Pretreated silicon substrate 101 is put into plasma reinforced chemical vapour deposition (PECVD) equipment deposition one deck Si
3N
4 Film 102, thickness be 0.5 μ m approximately.As shown in accompanying drawing 3a.
(2) at front side of silicon wafer photoetching corrosion window, preparation BOE solution is put into BOE solution with the Si sheet made from photoresist mask and was soaked approximately 30 minutes, obtains with Si
3N
4Corrosion window for mask.
(3) the TMAH solution of configuration 25wt.% carries out anisotropic etch to substrate, adds (NH in the ratio of 3g/100ml
4) S
2O
8, solution temperature is 80 ℃, etching time 1h30min forms the degree of depth and is about 30 μ m silicon cup grooves.As shown in accompanying drawing 3b.
(4) repeating step (1), deposit thickness is the Si of 1 μ m approximately
3N
4Film 102.As shown in accompanying drawing 3c.
(5) with acetone, alcohol sonic oscillation cleaning silicon chip, produce the hearth electrode graph of a correspondence of detector by photoetching processes such as gluing, post bake, exposure, development, rear bakings, then by Deposited By Dc Magnetron Sputtering Ni/Cr hearth electrode 103, thickness of electrode is about 200nm.(as shown in accompanying drawing 3d).
(6) in the silicon cup groove and above hearth electrode with the method for electrophoretic deposition deposition BST pyroelectricity thick-film material 104, then thick-film material is dried, hydraulic pressure then, high temperature sintering becomes pottery in tube furnace at last, 750 ℃ of temperature are incubated 1h.As shown in accompanying drawing 3e.
(7) conventional cleaning silicon chip is surperficial, coat photoresist on the surface, the glue type is AZ5214, rotating speed: 3000-4000r/min, hot plate post bake: 100 ℃/5min, then make barrier layer figure around the silicon cup recess edge by lithography according to the photoetching process in above-mentioned steps (5).Carry out at last hot setting in baking oven, 180 ℃ of temperature, insulation 1h, being prepared into thickness is the barrier layer 105 of 5-7 μ m.As shown in accompanying drawing 3f.
(8) photoetching process and the magnetically controlled DC sputtering technique that repeat in above-mentioned steps (5) prepare Al top electrode 106.Thickness of electrode is about 200nm.As shown in accompanying drawing 3g.
Above-mentioned pyroelectricity thick film detector is carried out the pyroelectric property test, and test result as shown in Figure 4.
Accompanying drawing 4 is pyroelectricity voltage response curves of pyroelectricity thick film detector, and the actual curve that records 108 meets well with simulation curve 107, and curve is smoother and interference signal is less.Be 1.15 * 10 by the pyroelectric coefficient that calculates
-8Ccm
-2K
-1, show that prepared detector pyroelectric property is good.
The temperature-sensitive material electronic devices and components are pyroelectricity thick film detector, and structural representation as shown in Figure 2.It comprises is with reeded substrate 101, barrier layer 102, hearth electrode 103, pyroelectricity material 104 and top electrode 106, between top electrode 106 and hearth electrode 103, be provided with separator 105, top electrode is crossed over the hearth electrode of separator 105 and separator 105 belows, is connected to pyroelectricity material 104.Described separator 105 ring-types are arranged at the recess edge of substrate 101, and separator 105 covers the hearth electrode 103 at recess edge place and the part of pyroelectricity material 104, and top electrode 106 and hearth electrode 103 are isolated fully.The material of described separator 105 is different from the material on barrier layer 102.The material of described separator 105 is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on described barrier layer 102 is SiO2 or Si3N4.
The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature or any new combination that discloses in this manual, and the arbitrary new method that discloses or step or any new combination of process.
Claims (9)
1. temperature-sensitive material electronic devices and components, comprise and be with reeded substrate (101), barrier layer (102), hearth electrode (103), pyroelectricity material (104) and top electrode (106), it is characterized in that, between top electrode (106) and hearth electrode (103), be provided with separator (105), top electrode (106) is crossed over the hearth electrode below separator (105) and separator (105), is connected to pyroelectricity material (104).
2. temperature-sensitive material electronic devices and components as claimed in claim 1, is characterized in that, described separator (105) ring-type is arranged at the recess edge of substrate (101).
3. temperature-sensitive material electronic devices and components as claimed in claim 1, is characterized in that, the material of described separator (105) is different from the material of barrier layer (102).
4. temperature-sensitive material electronic devices and components as claimed in claim 1, is characterized in that, the material of described separator (105) is photaesthesia macromolecule polymer material, high sensitivity electron beam adhesive, resistance to acids and bases protection glue or polyimide resin PI; The material on described barrier layer (102) is SiO
2Or Si
3N
4
5. the preparation method of temperature-sensitive material electronic devices and components as claimed in claim 1, is characterized in that, comprises the steps:
Step 1: preparation substrate (101) and barrier layer (102);
Step 2: (102) upper preparation hearth electrode (103) on the barrier layer;
Step 3: prepare pyroelectricity material (104) in the upper silicon cup groove of hearth electrode (103);
Step 4: described pyroelectricity material (104) high temperature sintering is become porcelain;
Step 5: form the separator figure in described silicon cup recess edge photoetching, then hot setting forms described separator (105);
Step 6: draw top electrode (106) above pyroelectricity material (104) and separator (105).
6. the preparation method of temperature-sensitive material electronic devices and components as claimed in claim 5, is characterized in that, described step 1 comprises:
(1.1) preliminary treatment before silicon substrate (101) thermal oxidation in thickness 500 μ m (100) crystal orientation: first silicon chip being put into concentration is that 30min is boiled in 70% concentrated sulfuric acid heating, then to put into concentration be that 70% concentrated hydrochloric acid continues heating and boils 30min to silicon chip, then use hydrofluoric acid clean 10min, rinse with plasma water at last, nitrogen dries up; Pretreated silicon substrate (101) is put into plasma reinforced chemical vapour deposition (PECVD) equipment deposition one deck Si
3N
4Film 102, thickness are 0.5 μ m;
(1.2) at described front side of silicon wafer photoetching corrosion window;
(1.3) Tetramethylammonium hydroxide (TMAH) solution of preparation 25wt.% carries out anisotropic etch to substrate, adds (NH in the ratio of 3g/100ml
4) S
2O
8, solution temperature is 80 ℃, etching time 1h30min, and forming the degree of depth is 30 μ m silicon cup grooves;
(1.4) repeating step (1.1), the Si of deposit thickness 1 μ m
3N
4Film;
7. the preparation method of temperature-sensitive material electronic devices and components as claimed in claim 5, is characterized in that, described step 2,3,4 is:
Step 2: with acetone, alcohol sonic oscillation cleaning silicon chip, produce the hearth electrode graph of a correspondence of detector by photoetching processes such as gluing, post bake, exposure, development, rear bakings, then by Deposited By Dc Magnetron Sputtering Ni/Cr hearth electrode (103), this hearth electrode thickness is 200nm;
Step 3: with the method deposition BST pyroelectricity material (104) of electrophoretic deposition, then pyroelectricity material is dried, then static pressure in the silicon cup groove and above hearth electrode (103);
Step 4: sinter pyroelectricity material (104) into pottery in tube furnace, sintering temperature is 750 ℃, and insulation 1h.
8. the preparation method of temperature-sensitive material electronic devices and components as claimed in claim 5, is characterized in that, described step 5 is:
Cleaning silicon chip surface, spin coating photoresist from the teeth outwards, rotating speed: 3000-4000r/min, hot plate post bake: 100 ℃/5min, then make the figure around the barrier layer (102) of silicon cup recess edge by lithography; Temperature with 150-250 ℃ is incubated 1h and carries out hot setting in baking oven at last, and being prepared into thickness is the separator (105) of 5-7 μ m.
9. the preparation method of temperature-sensitive material electronic devices and components as claimed in claim 5, is characterized in that, described step 6 is: adopt photoetching process and magnetically controlled DC sputtering technique to prepare top electrode (106), thickness of electrode is 200nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293636A (en) * | 2016-04-05 | 2017-10-24 | 中国科学院上海硅酸盐研究所 | A kind of sige alloy base thermoelectric element and preparation method thereof |
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| JP2005259944A (en) * | 2004-03-11 | 2005-09-22 | Nagoya Industrial Science Research Inst | Thin film thermo-electronic semiconductor device and manufacturing method thereof |
| CN102820421A (en) * | 2012-08-15 | 2012-12-12 | 电子科技大学 | Preparation method of pyroelectric thick film detector with silicon cup groove structure |
| CN102842530A (en) * | 2012-08-15 | 2012-12-26 | 电子科技大学 | Thick film material electronic component and preparation method thereof |
-
2013
- 2013-01-25 CN CN2013100288476A patent/CN103137847A/en active Pending
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|---|---|---|---|---|
| JP2005259944A (en) * | 2004-03-11 | 2005-09-22 | Nagoya Industrial Science Research Inst | Thin film thermo-electronic semiconductor device and manufacturing method thereof |
| CN102820421A (en) * | 2012-08-15 | 2012-12-12 | 电子科技大学 | Preparation method of pyroelectric thick film detector with silicon cup groove structure |
| CN102842530A (en) * | 2012-08-15 | 2012-12-26 | 电子科技大学 | Thick film material electronic component and preparation method thereof |
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| CN107293636A (en) * | 2016-04-05 | 2017-10-24 | 中国科学院上海硅酸盐研究所 | A kind of sige alloy base thermoelectric element and preparation method thereof |
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Application publication date: 20130605 |