CN106966356A - A kind of beam type diaphragm pressure electrification structure - Google Patents

A kind of beam type diaphragm pressure electrification structure Download PDF

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Publication number
CN106966356A
CN106966356A CN201710208013.1A CN201710208013A CN106966356A CN 106966356 A CN106966356 A CN 106966356A CN 201710208013 A CN201710208013 A CN 201710208013A CN 106966356 A CN106966356 A CN 106966356A
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China
Prior art keywords
pzt
frame
electrode layer
silicon
bottom electrode
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CN201710208013.1A
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Chinese (zh)
Inventor
闫树斌
李国洪
张志东
张彦军
冯登超
张勐
赵学峰
薛晨阳
张文栋
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North University of China
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North University of China
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)

Abstract

The invention belongs to micro electro mechanical system field, specially a kind of beam type diaphragm pressure electrification structure, including frame-type substrate, frame-type substrate opening just to beam provided with hanging in the intrabasement silicon cantilever of frame-type, the free end of silicon cantilever is fixed with mass, frame-type substrate opening just to beam above be additionally provided with silicon dioxide insulating layer, silicon dioxide insulating layer is provided with bottom electrode layer, the strip bottom electrode layer above silicon cantilever is extended with towards frame-type substrate open side on bottom electrode layer, mass is provided with PZT piezoelectric layers, PZT piezoelectric layers are extended with the strip PZT piezoelectric layers above strip bottom electrode layer towards silicon dioxide insulating layer direction, top electrode layer is provided with above strip PZT piezoelectric layers.When system is in vibration environment, vibrational energy in external environment is delivered in system, is caused silicon cantilever vibration and flexural deformation, silicon cantilever is stored mechanical energy, so as to cause the flexible of piezoelectric layer and then produce electric signal, mechanical energy is realized to the conversion of electric energy.

Description

A kind of beam type diaphragm pressure electrification structure
Technical field
The invention belongs to micro electro mechanical system field, specially a kind of beam type diaphragm pressure electrification structure.
Background technology
MEMS（Micro-Electro-Mechanical System, MEMS）Technology be using microelectric technique as Basis, the revolutionary new technology of the multi-crossed disciplines such as sound, light, electricity, material, mechanics, chemistry.It uses semiconductor machining work Skill, has merged the key technologies such as photoetching, burn into etching, deposition, has been directed to making and collects sensor, actuator and micro- energy in one The ultramicro minitype intelligent chip of body.MEMS technology research and develop silicon micro-sensor during gradually developed by microelectric technique and Come, be initially applied to silicon piezoresistance type pressure sensor.With the development and popularization of the technology, prepared with MEMS technology All kinds of silicon based sensors, such as pressure sensor, accelerometer, temperature sensor, gas sensor, integrating optical sensor, with Its precision height, low cost, small volume, high reliability realize rapidly commercialization.It is used as the typical generation in silicon based sensor Table, silicon pressure sensor has manufacture craft maturation, stable work in work, cost performance ratio, is widely used in vapour Turner industry, automatically control, space flight navigation, in terms of health care and Military Application.Pressure sensor is main with difference in functionality device Part realizes that single chip integrated intelligent sensing micro-system is goal in research on a silicon substrate, realizes high sensitivity, small-range, senior engineer Make temperature, pressure detection, to meet the job requirement of different field.
The device such as competition field scoreboard and lighting apparatus such as tae kwon do, martial arts performance is all logical among current sports tournament External power supply work is crossed, energy-conserving and environment-protective principle is not met, the kinetic energy that the sportsman on competition field consumes has not been utilized Come, there is provided a kind of beam type diaphragm pressure electrification structure with regard to current this problem by the present invention.
The content of the invention
The present invention provides to solve the above problems there is provided a kind of beam type diaphragm pressure electrification structure Operation principle and piezoelectricity layer manufacturing method thereof that the film of beam type ring resonator generates electricity.
The present invention adopts the following technical scheme that realization：A kind of beam type diaphragm pressure electrification structure, including frame Type substrate, a side opening of frame-type substrate, frame-type substrate opening just to beam provided with hanging in the intrabasement silicon cantilever of frame-type Beam, the free end of silicon cantilever is fixed with mass, frame-type substrate opening just to beam above be additionally provided with silicon dioxide insulating layer, Silicon dioxide insulating layer is provided with bottom electrode layer, bottom electrode layer towards frame-type substrate open side and is extended with above silicon cantilever Strip bottom electrode layer, mass be provided with PZT piezoelectric layers, PZT piezoelectric layers are extended with towards silicon dioxide insulating layer direction to be located at Top electrode layer is provided with above strip PZT piezoelectric layers above strip bottom electrode layer, strip PZT piezoelectric layers.
A kind of above-mentioned beam type diaphragm pressure electrification structure, the preparation method of PZT piezoelectric layers comprises the following steps：
The first step：Precursor sol is prepared, with photoresist spinner rotary coating to substrate surface, one layer is formed on substrate uniformly PZT wet films, photoresist spinner rotating speed be 3000r/min, spin-coating time 30s；
Second step：Preheating and drying, PZT wet films are placed in 180 °C of baking ovens and toast 10min, to remove moisture and organic principle shape Into PZT dry films；
3rd step：The pre-heat treatment, PZT dry films are put into muffle furnace and carry out the pre-heat treatment, colloidal sol is occurred gel polycondensation and are formed Solid solution, obtains pzt thin film；
4th step：Repeat the above steps, get rid of 5 layers of pzt thin film altogether on substrate；
5th step：Final annealing process, 5 layers of pzt thin film are put into muffle furnace and carry out final annealing process, enter pzt thin film Row cohesion, thin film crystallization is gradually that the calcium with piezoelectric property is admired mineral phase structure by burnt green stone phase in version, finally naturally cold with stove But；
6th step：Repeat the above steps, until reaching required thickness.
Cantilever beam structure purpose of design of the present invention is in order that cantilever beam can realize mode of resonance in vibration environment Formula, therefore need to make the vibration frequency of cantilever beam approach with environmental vibration frequency.Because generally existing master oscillator frequenc in environment Low-frequency vibration source between 100-500Hz, therefore, the piezoelectric cantilever that the present invention is designed will meet resonant frequency in 100- Between 500Hz, so that cantilever beam reaches resonance, maximum output electric energy in these vibration sources.In order to obtain lower resonance frequency Rate, mass is added in the free end of cantilever beam, while appropriate increase width, structural representation is as shown in Figure 1.In piezoelectricity The free end increase lumped mass block of cantilever beam, the outstanding advantages with following two aspects can reduce cantilever beam first Intrinsic frequency, makes the intrinsic frequency of structure identical or close with environmental vibration frequency, so that the vibrational system of piezo-electric generating exists Worked under resonance state.Secondly, free end lumped mass adds inertia force, so as to increase the deformation of cantilever beam, that is, increases defeated Enter the mechanical energy of piezoelectric layer, output electric energy is also just correspondingly improved.When the system is in vibration environment, in external environment Vibrational energy is delivered in system, causes cantilever beam vibration and flexural deformation, cantilever beam is stored mechanical energy, allows cantilever beam and piezoelectricity Layer is combined, so as to cause the flexible of piezoelectric layer and then produce electric signal, realizes mechanical energy to the conversion of electric energy.
Brief description of the drawings
Fig. 1 is beam type film electrification structure schematic diagram.
Fig. 2 is that beam type film electrification structure is layered schematic diagram.
Fig. 3 is beam type film generating mechanism operation principle schematic diagram.
In figure：1- frame-type substrates, 2- silicon cantilevers, 3- masses, 4- silicon dioxide insulating layers, 5- bottom electrode layers, 6-PZT Piezoelectric layer, 7- top electrode layers.
Embodiment
A kind of beam type diaphragm pressure electrification structure, including frame-type substrate 1, a side opening of frame-type substrate 1, frame-type base Bottom opening just to beam provided with hanging in the intrabasement silicon cantilever 2 of frame-type, the free end of silicon cantilever 2 is fixed with mass 3, the width of mass 3 is more than the width of silicon cantilever 2, frame-type substrate opening just to beam above be additionally provided with silicon dioxide insulator Layer 4, silicon dioxide insulating layer 4 is provided with Pt/Ti（Platinum plating above titanium）Towards frame-type base on bottom electrode layer 5, Pt/Ti bottom electrode layers 5 Bottom opening side is extended with the strip Pt/Ti bottom electrode layers 5 above silicon cantilever, and mass is provided with PZT piezoelectric layers 6, PZT Piezoelectric layer 6 is extended with the strip PZT piezoelectric layers 6 above strip bottom electrode layer, strip PZT towards silicon dioxide insulating layer direction Pt/Ti top electrode layers 7 are provided with above piezoelectric layer.
A kind of above-mentioned beam type diaphragm pressure electrification structure, the preparation method of PZT piezoelectric layers comprises the following steps：
The first step：Precursor sol is prepared, with photoresist spinner rotary coating to substrate surface, one layer is formed on substrate uniformly PZT wet films, photoresist spinner rotating speed be 3000r/min, spin-coating time 30s；
Second step：Preheating and drying, PZT wet films are placed in 180 °C of baking ovens and toast 10min, to remove moisture and organic principle shape Into PZT dry films；
3rd step：The pre-heat treatment, PZT dry films are put into muffle furnace and carry out the pre-heat treatment, colloidal sol is occurred gel polycondensation and are formed Solid solution, obtains pzt thin film；
4th step：Repeat the above steps, get rid of 5 layers of pzt thin film altogether on substrate；
5th step：Final annealing process, 5 layers of pzt thin film are put into muffle furnace and carry out final annealing process, enter pzt thin film Row cohesion, thin film crystallization is gradually that the calcium with piezoelectric property is admired mineral phase structure by burnt green stone phase in version, finally naturally cold with stove But；
6th step：Repeat the above steps, until reaching required thickness.
Fig. 3 is beam type film generating mechanism operation principle schematic diagram, and its operation principle is：When system is in oscillation ring When in border, the vibrational energy in external environment is delivered in system, is caused silicon cantilever vibration and flexural deformation, is stored up silicon cantilever Mechanical energy is deposited, so as to cause the flexible of piezoelectric layer and then produce electric signal, mechanical energy is realized to the conversion of electric energy.

Claims (2)

1. a kind of beam type diaphragm pressure electrification structure, it is characterised in that including frame-type substrate（1）, frame-type substrate（1）One Side opening, frame-type substrate opening just to beam provided with hanging in the intrabasement silicon cantilever of frame-type（2）, silicon cantilever（2）'s Free end is fixed with mass（3）, frame-type substrate opening just to beam above be additionally provided with silicon dioxide insulating layer（4）, titanium dioxide Silicon insulating barrier（4）It is provided with bottom electrode layer（5）, bottom electrode layer（5）On be extended with towards frame-type substrate open side positioned at silicon cantilever The strip bottom electrode layer of top（5）, mass（3）It is provided with PZT piezoelectric layers（6）, PZT piezoelectric layers（6）Towards silicon dioxide insulator Layer direction is extended with the strip PZT piezoelectric layers above strip bottom electrode layer（6）, strip PZT piezoelectric layers top is provided with top electricity Pole layer（7）.
2. a kind of beam type diaphragm pressure electrification structure according to claim 1, it is characterised in that the system of PZT piezoelectric layers Comprise the following steps as method：
The first step：Precursor sol is prepared, with photoresist spinner rotary coating to substrate surface, one layer is formed on substrate uniformly PZT wet films, photoresist spinner rotating speed be 3000r/min, spin-coating time 30s；
Second step：Preheating and drying, PZT wet films are placed in 180 °C of baking ovens and toast 10min, to remove moisture and organic principle shape Into PZT dry films；
3rd step：The pre-heat treatment, PZT dry films are put into muffle furnace and carry out the pre-heat treatment, colloidal sol is occurred gel polycondensation and are formed Solid solution, obtains pzt thin film；
4th step：Repeat the above steps, get rid of 5 layers of pzt thin film altogether on substrate；
5th step：Final annealing process, 5 layers of pzt thin film are put into muffle furnace and carry out final annealing process, enter pzt thin film Row cohesion, thin film crystallization is gradually that the calcium with piezoelectric property is admired mineral phase structure by burnt green stone phase in version, finally naturally cold with stove But；
6th step：Repeat the above steps, until reaching required thickness.
CN201710208013.1A 2017-03-31 2017-03-31 A kind of beam type diaphragm pressure electrification structure Pending CN106966356A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447979A (en) * 2018-03-08 2018-08-24 清华大学 Piezoelectric film sensor and preparation method thereof
CN108939215A (en) * 2018-08-31 2018-12-07 浙江康德莱医疗器械股份有限公司 A kind of safety injector
CN113507676A (en) * 2021-08-13 2021-10-15 中北大学 Structure and device of silicon-based cantilever beam type MEMS piezoelectric microphone
CN116364483A (en) * 2023-06-02 2023-06-30 中国工程物理研究院电子工程研究所 High-impact quartz micro-switch

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447979A (en) * 2018-03-08 2018-08-24 清华大学 Piezoelectric film sensor and preparation method thereof
CN108447979B (en) * 2018-03-08 2019-09-20 清华大学 Piezoelectric film sensor and preparation method thereof
CN108939215A (en) * 2018-08-31 2018-12-07 浙江康德莱医疗器械股份有限公司 A kind of safety injector
CN113507676A (en) * 2021-08-13 2021-10-15 中北大学 Structure and device of silicon-based cantilever beam type MEMS piezoelectric microphone
CN116364483A (en) * 2023-06-02 2023-06-30 中国工程物理研究院电子工程研究所 High-impact quartz micro-switch
CN116364483B (en) * 2023-06-02 2023-08-01 中国工程物理研究院电子工程研究所 High-impact quartz micro-switch

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Application publication date: 20170721