CN212363451U - Full-flexible pyroelectric infrared detector - Google Patents
Full-flexible pyroelectric infrared detector Download PDFInfo
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- CN212363451U CN212363451U CN202020440316.3U CN202020440316U CN212363451U CN 212363451 U CN212363451 U CN 212363451U CN 202020440316 U CN202020440316 U CN 202020440316U CN 212363451 U CN212363451 U CN 212363451U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 230000005855 radiation Effects 0.000 claims abstract description 20
- 230000007246 mechanism Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 32
- 239000004642 Polyimide Substances 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 14
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- -1 Polydimethylsiloxane Polymers 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000011147 inorganic material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 238000005459 micromachining Methods 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 3
- 239000004800 polyvinyl chloride Substances 0.000 claims description 3
- 229920000131 polyvinylidene Polymers 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 57
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229910018487 Ni—Cr Inorganic materials 0.000 description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The utility model discloses a fully flexible pyroelectric infrared detector, relating to the structural design field of pyroelectric sensors and comprising a flexible infrared radiation modulation mechanism and a flexible infrared sensitive unit; the flexible infrared radiation modulation mechanism is a single-end or double-end supported metal film cantilever beam, and by applying a voltage signal with a certain frequency between the cantilever beam and the electrode layer on the flexible infrared sensitive unit, the cantilever beam can move up and down in a certain range according to the corresponding frequency, so that the cantilever beam is periodically separated from and contacted with the upper surface of the flexible infrared sensitive unit, and the infrared radiation modulation is realized; the utility model provides a current pyroelectric infrared detector adopt mechanical chopper and be difficult to realize integrating with the difficult problem of flexibility for pyroelectric infrared detector can be applied to wearable electronic equipment like flexible temperature sensor, flexible thermal infrared imager.
Description
Technical Field
The utility model relates to a heat is released electric detector structural design field, especially concretely relates to full flexible heat is released electric infrared detector.
Background
The pyroelectric infrared detector is a thermal infrared detector made by utilizing the effect that the spontaneous polarization intensity of a pyroelectric material changes along with the temperature, the traditional pyroelectric infrared detector adopts rigid ferroelectric ceramics or ferroelectric crystals, the existing flexible pyroelectric infrared detector based on ferroelectric polymers has the advantages of light weight, flexibility, impact resistance, corrosion resistance, easiness in processing and the like, and has good application prospect in the field with higher requirements on the portability of devices.
However, the working principle of the pyroelectric infrared detector determines that the pyroelectric infrared detector can only respond to a changing temperature signal, so that in order to detect a static target, a mechanical chopper must be added in front of the detector, and the chopper rotates at a certain frequency so as to modulate static infrared radiation into dynamic infrared radiation which is periodically switched on and off. Due to the chopper, the infrared detector based on the pyroelectric effect is difficult to integrate, miniaturize and even inflexible, and the application prospect of the pyroelectric infrared detector in the aspects of flexible electronics, portable equipment and the like is greatly reduced, so that the development of a full-flexible pyroelectric infrared detector without a mechanical chopper is very necessary.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a full flexible pyroelectric infrared detector to for pyroelectric infrared detector is in wearable portable equipment, like flexible temperature sensor, the basis is established in the application of aspects such as flexible thermal infrared imager.
In order to achieve the above object, the utility model adopts the following technical scheme:
a fully flexible pyroelectric infrared detector comprises a flexible infrared radiation modulation mechanism and a flexible infrared pyroelectric sensitive unit, wherein the flexible infrared pyroelectric sensitive unit comprises an insulating layer, an upper electrode layer, a pyroelectric sensitive film and a lower electrode layer which are sequentially arranged from top to bottom; the flexible infrared radiation modulation mechanism is arranged on the insulating layer and comprises 1 or 2 supporting columns and a metal film, and the metal film is arranged on the supporting columns to form a single-ended or double-ended cantilever beam; the metal film of the cantilever beam and the upper electrode of the flexible infrared pyroelectric sensitive unit are connected with a voltage source through a circuit switch, and the circuit switch can be controlled through a switch control circuit; a voltage signal with certain frequency and amplitude is applied between the metal film of the cantilever beam and the upper electrode of the flexible infrared pyroelectric sensitive unit, and the metal film of the cantilever beam can move up and down in a certain range according to corresponding frequency so as to be periodically separated from and contacted with the top insulating layer of the flexible infrared pyroelectric sensitive unit, so that heat flow generated by incident infrared radiation is periodically transmitted to the pyroelectric sensitive film to cause the temperature of the pyroelectric sensitive film to be periodically changed.
Further, the support pillar can be made of silicon oxide, silicon nitride, polysilicon inorganic material, or polyimide, Polydimethylsiloxane (PDMS) organic material, or common metal materials of aluminum, nickel, chromium, copper, gold, and titanium.
Furthermore, the single-ended cantilever beam also comprises a limiting structure arranged on the insulating layer and used for limiting an upper intercept point of the upward movement of the metal film of the cantilever beam.
Further, the metal film of the cantilever beam can be prepared from common easily-processed metal materials such as aluminum, nickel, chromium, copper, gold and titanium.
Further, the insulating layer may be made of silicon oxide, silicon nitride, polysilicon inorganic material, or polyimide, Polydimethylsiloxane (PDMS) organic material.
Furthermore, the pyroelectric sensitive film can be prepared by flexible pyroelectric polymers of polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polyvinylidene fluoride-trifluoroethylene, odd nylon, polyvinyl chloride or polypropylene, or a doping system taking the flexible pyroelectric polymers as a main body and doped with barium strontium titanate and lead zirconate titanate inorganic ferroelectric ceramics.
Further, the circuit switch and the switch control circuit can be realized by a separate circuit module or by an integrated circuit.
Further, the fully flexible pyroelectric infrared detector can be partially or completely realized by adopting a flexible film process and a micromachining process from bottom to top according to requirements.
The utility model also provides a method for preparing foretell full flexible infrared heat release electric detector who need not external chopper, including following step:
step 1: completely dissolving the flexible pyroelectric polymer into a solution, uniformly coating the solution on a flat substrate, then putting the flat substrate into a thermostat, baking the flat substrate until the solution is completely volatilized, forming a sensitive film by the flexible pyroelectric polymer, and then stripping the sensitive film to obtain a pyroelectric sensitive film;
step 2: preparing metal electrode layers with the same thickness on the upper surface and the lower surface of the pyroelectric sensitive film in a vapor deposition and sputtering mode to form an upper electrode layer and a lower electrode layer;
and step 3: preparing a silicon oxide or silicon nitride inorganic insulating layer above the upper electrode layer by adopting a chemical vapor deposition method; or preparing the polyimide or PDMS organic insulating layer by adopting a spin coating and tape casting method;
and 4, step 4: preparing a silicon oxide or silicon nitride inorganic insulating support column on the upper electrode layer or the insulating layer by adopting a chemical vapor deposition method, or preparing a polyimide or PDMS organic insulating support column on the upper electrode layer or the insulating layer by adopting a spin coating or tape casting method; or preparing a metal support pillar on the insulating layer by adopting an evaporation and sputtering method;
and 5: preparing a sacrificial layer with the same height as the support column on the insulating layer, preparing a metal film of the cantilever beam with low surface reflectivity by adopting evaporation and sputtering methods, and then sacrificing the sacrificial layer to obtain the metal cantilever beam;
step 6: the metal film and the upper electrode layer of the cantilever beam are connected with two stages of a driving circuit, the upper electrode layer is grounded, signals of the flexible infrared pyroelectric sensitive unit can be led out from the lower electrode, and the influence of a cantilever beam driving voltage source on the signals is eliminated.
The utility model discloses following beneficial effect has:
(1) the periodic modulation of incident infrared radiation is realized through the up-and-down motion of the flexible metal film cantilever beam, specifically, when the cantilever beam is suspended and separated from the upper surface of the flexible infrared pyroelectric sensitive unit, the infrared radiation cannot be transmitted to the flexible infrared pyroelectric sensitive unit due to the existence of an air gap, so that the temperature of the flexible infrared pyroelectric sensitive unit is kept unchanged; when the cantilever beam is contacted with the upper surface of the flexible infrared pyroelectric sensing unit, because the metal film of the cantilever beam is very thin and the thermal resistance is extremely low, the temperature rise of the cantilever beam caused by infrared radiation can be rapidly transmitted to the flexible infrared pyroelectric sensing unit without loss, so that the temperature rise of the flexible infrared pyroelectric sensing unit is caused; when the cantilever beam is separated again, the temperature of the flexible infrared pyroelectric sensitive unit is reduced and recovered to the initial temperature.
(2) The flexible infrared radiation modulation mechanism is combined with the flexible pyroelectric infrared sensitive unit, so that full flexibility and integration of the pyroelectric infrared detector are realized, and miniaturization and array of the pyroelectric infrared detector can be realized by further combining a micro-processing technology.
(3) Based on the utility model discloses the thinking is that the application of aspects such as flexible temperature sensor, flexible thermal infrared imager establishes the basis at wearable portable equipment for pyroelectric infrared detector.
Drawings
Fig. 1 is the working schematic diagram of the fully flexible pyroelectric infrared detector of the single-ended cantilever beam of the present invention (the circuit switch is in an off state).
Fig. 2 is the working schematic diagram of the fully flexible pyroelectric infrared detector of the single-ended cantilever beam of the present invention (the circuit switch is in the connection state).
Fig. 3 is a schematic diagram of the operation of the fully flexible pyroelectric infrared detector of the cantilever beam at two ends of the present invention (the circuit switch is in an off state).
Fig. 4 is a schematic diagram of the operation of the fully flexible pyroelectric infrared detector of the cantilever beam at two ends of the present invention (the circuit switch is in a connection state).
Fig. 5 is a schematic view of the processing procedure of embodiment 2 of the present invention.
Fig. 6 is a schematic view of the processing procedure of embodiment 3 of the present invention.
Fig. 7 is a schematic view of the processing procedure of embodiment 4 of the present invention.
The labels in the figure are: 11. a pyroelectric sensitive film; 12. an upper electrode layer; 13. a lower electrode layer; 20. an insulating layer; 31. a support pillar; 32. a metal thin film; 33. a limiting structure; 41. a voltage source; 42. a circuit switch; 43. a switch control circuit; 51. a base; 52. a sacrificial layer; 53. a cantilever sacrificial layer.
Wherein the large arrows in fig. 1 to 4 represent incident infrared radiation and the small arrows represent heat flow from the metal film to the flexible pyroelectric sensitive film by thermal conduction.
Detailed Description
Example 1
As shown in fig. 1 to 4, the fully flexible pyroelectric infrared detector provided in this embodiment includes a flexible infrared radiation modulation mechanism and a flexible infrared pyroelectric sensing unit, where the flexible infrared pyroelectric sensing unit includes an insulating layer 20, an upper electrode layer 12, a pyroelectric sensing film 11, and a lower electrode layer 13, which are sequentially disposed from top to bottom; the flexible infrared radiation modulation mechanism is installed on the insulating layer 20, the flexible infrared radiation modulation mechanism comprises 1 or 2 supporting columns 31 and a metal film 32, and the metal film 32 is installed on the supporting columns 31 to form a single-ended or double-ended cantilever beam; the metal film 32 of the cantilever beam and the upper electrode of the flexible infrared pyroelectric sensitive unit are connected with a voltage source 41 through a circuit switch 42, and the circuit switch 42 can be controlled through a switch control circuit 43; a voltage signal with a certain frequency and amplitude is applied between the metal film 32 of the cantilever and the upper electrode layer 12 of the flexible infrared pyroelectric sensing unit, and the metal film 32 of the cantilever can move up and down in a certain range according to the corresponding frequency, so as to be periodically separated from and contacted with the top insulating layer 20 of the flexible infrared pyroelectric sensing unit, so that heat flow generated by incident infrared radiation is periodically transmitted to the pyroelectric sensing film 11 to cause the temperature thereof to periodically change.
The supporting column 31 can be made of silicon oxide, silicon nitride, polysilicon inorganic material, or polyimide, Polydimethylsiloxane (PDMS) organic material, or common metal materials such as aluminum, nickel, chromium, copper, gold, and titanium.
The metal film 32 of the cantilever can be made of common metal materials which are easy to process, such as aluminum, nickel, chromium, copper, gold and titanium.
The insulating layer 20 may be made of silicon oxide, silicon nitride, polysilicon inorganic material, or polyimide, Polydimethylsiloxane (PDMS) organic material.
The pyroelectric sensitive film 11 can be prepared by flexible pyroelectric polymers of polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polyvinylidene fluoride-trifluoroethylene, odd nylon, polyvinyl chloride or polypropylene, or a doping system taking the flexible pyroelectric polymers as a main body and a doping system doped with barium strontium titanate and lead zirconate titanate inorganic ferroelectric ceramics.
The circuit switch 42 and the switch control circuit 43 may be implemented by separate circuit modules, or may be implemented by an integrated circuit.
The fully flexible pyroelectric infrared detector can be partially or completely realized by adopting a flexible film process and a micromachining process from bottom to top according to requirements.
Example 2
As shown in fig. 5, the method for manufacturing a fully flexible pyroelectric infrared detector provided by this embodiment includes the following steps:
step 1: a 1 μm thick nichrome film was sputtered on the susceptor 51 made of a silicon wafer as a sacrificial layer 52.
Step 2: the flexible pyroelectric polymer is completely dissolved into a solution, the solution is uniformly coated on the sacrificial layer 52 of the base 51, and then the solution is placed into a thermostat and baked until the solvent is completely volatilized, so that the flexible pyroelectric polymer forms the pyroelectric sensitive film 11.
And step 3: the upper surface of the pyroelectric sensitive film 11 is prepared with 100nm metal aluminum as the upper electrode layer 12 of the flexible infrared pyroelectric sensitive unit by adopting a sputtering method.
And 4, step 4: a200 nm silicon nitride dielectric film is prepared on the surface of the upper electrode layer 12 by a chemical vapor deposition method to serve as an insulating layer 20.
And 5: a1-micron metal titanium film with proper tensile stress is deposited on the surface of the 200nm silicon nitride insulating layer 20, and the supporting column 31 of the cantilever beam is prepared by combining photoetching and etching processes.
Step 6: a 1 μm thick metal cantilever sacrificial layer 53 is prepared on the insulating layer 20 using photosensitive polyimide.
And 7: and depositing a metal titanium film with the thickness of 200-300 nm on the metal cantilever sacrificial layer 53 by adopting a sputtering method to serve as the metal film 32 of the cantilever.
And 8: and etching the sacrificial layer 52 on the base 11 by using a TFN nickel-chromium etching solution to strip the flexible infrared pyroelectric sensitive unit from the base 51.
And step 9: and preparing 100nm metal aluminum serving as a lower electrode layer 13 of the flexible infrared pyroelectric sensitive unit on the lower surface of the flexible pyroelectric sensitive film 11 in a sputtering mode.
Step 10: and releasing photosensitive polyimide by using oxygen plasma to prepare the metal cantilever sacrificial layer 53, so as to obtain the final fully-flexible infrared detector.
Example 3
As shown in fig. 4, the embodiment provides a method for manufacturing a fully flexible pyroelectric infrared detector, which includes the following steps:
step 1: a 1 μm thick nichrome film was sputtered on the susceptor 51 made of a silicon wafer as a sacrificial layer 52.
Step 2: the flexible pyroelectric polymer is completely dissolved into a solution, the solution is uniformly coated on the sacrificial layer 52 of the base 51, and then the solution is placed into a thermostat and baked until the solvent is completely volatilized, so that the flexible pyroelectric polymer forms the pyroelectric sensitive film 11.
And step 3: the upper surface of the pyroelectric sensitive film 11 is prepared with 100nm metal aluminum as the upper electrode layer 12 of the flexible infrared pyroelectric sensitive unit by adopting a sputtering method.
And 4, step 4: a200 nm silicon nitride dielectric film is prepared on the surface of the upper electrode layer 12 by a chemical vapor deposition method to serve as an insulating layer 20.
And 5: the supporting column 31 of the cantilever beam and the lower part of the limiting structure 33 of the cantilever beam are prepared on the surface of the 200nm silicon nitride insulating layer 20 by adopting a chemical vapor deposition method 1 mu m silicon oxide and combining photoetching and etching processes.
Step 6: preparing a 1-micron-thickness metal cantilever sacrificial layer 52 on the insulating layer 20 by using photosensitive polyimide; and depositing a metal titanium film with proper tensile stress of 200-300 nm by adopting a sputtering method to serve as the metal film 32 of the cantilever.
And 7: and preparing the middle part of the cantilever beam limiting structure 33 on the lower part of the cantilever beam limiting structure 33 by adopting silicon oxide with the diameter of 1 mu m by adopting a chemical vapor deposition method and combining photoetching and etching processes.
And 8: a second sacrificial layer with the thickness of 1 mu m is prepared on a metal film 32 of the cantilever beam by adopting photosensitive polyimide, silicon oxide with the thickness of 1 mu m is prepared in the middle of a limiting structure 33 of the cantilever beam by adopting a chemical vapor deposition method, and the top of the limiting structure 33 of the cantilever beam is prepared by combining photoetching and etching processes.
And step 9: etching the nickel-chromium sacrificial layer 52 above the base 51 by using a TFN nickel-chromium etching solution, and stripping the flexible infrared pyroelectric sensitive unit from the base 51; meanwhile, 100nm of metal aluminum is prepared on the lower surface of the pyroelectric sensitive film 11 by adopting a sputtering method and used as a lower electrode layer 13 of the flexible infrared pyroelectric sensitive unit.
Step 10: and releasing photosensitive polyimide by using oxygen plasma to prepare the metal cantilever sacrificial layer 53, so as to obtain the final fully-flexible infrared detector.
Example 4
As shown in fig. 5, the embodiment provides a method for manufacturing a fully flexible pyroelectric infrared detector, which includes the following steps:
step 1: a 1 μm thick nichrome film was sputtered on the susceptor 51 made of a silicon wafer as a sacrificial layer 52.
Step 2: the flexible pyroelectric polymer is completely dissolved into a solution, the solution is uniformly coated on the sacrificial layer 52 of the base 51, and then the solution is placed into a thermostat and baked until the solvent is completely volatilized, so that the flexible pyroelectric polymer forms the pyroelectric sensitive film 11.
And step 3: the upper surface of the pyroelectric sensitive film 11 is prepared with 100nm metal aluminum as the upper electrode layer 12 of the flexible infrared pyroelectric sensitive unit by adopting a sputtering method.
And 4, step 4: a200 nm silicon nitride dielectric film is prepared on the surface of the upper electrode layer 12 by a chemical vapor deposition method to serve as an insulating layer 20.
And 5: a1-micron metal titanium film with proper tensile stress is deposited on the surface of the 200nm silicon nitride insulating layer 20, and the cantilever beam supporting column 31 is prepared by combining photoetching and etching processes.
Step 6: the photosensitive polyimide is used to prepare a 1 μm thick metal cantilever sacrificial layer 53.
And 7: and depositing a metal titanium film with the thickness of 200-300 nm by adopting a sputtering method to serve as the metal film 32 of the cantilever.
And 8: and etching the nickel-chromium sacrificial layer 52 above the base 51 by using a TFN nickel-chromium etching solution, and stripping the flexible infrared pyroelectric sensitive unit from the base 51.
And step 9: and preparing 100nm metal aluminum on the lower surface of the pyroelectric sensitive film 11 by adopting a sputtering method to serve as a lower electrode layer 13 of the flexible infrared pyroelectric sensitive unit.
Step 10: and releasing the photosensitive polyimide by adopting oxygen plasma to prepare the metal cantilever sacrificial layer 52 to obtain the final fully-flexible infrared detector.
In the three fully-flexible infrared detector structures prepared in the embodiments 2-4, the single-end supporting structure in the embodiment 2 is simple in process and suitable for occasions with small device deformation; when the deformation is large, the cantilever beam may be far away from the upper surface of the detector and cannot be normally driven, and therefore, the cantilever beam limiting structure 33 is added in embodiment 3, so that the number of process steps is large, and the detector can work in a large deformation occasion; example 4 a double-ended support structure was used and the process steps were exactly the same as in example 2, but due to the double-ended support, the detector was also able to work in large deformation situations.
The above is only the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any modification and replacement based on the technical solution and the utility model should be covered in the protection scope of the present invention.
Claims (8)
1. A full flexible pyroelectric infrared detector is characterized in that: the infrared pyroelectric infrared sensor comprises a flexible infrared radiation modulation mechanism and a flexible infrared pyroelectric sensitive unit, wherein the flexible infrared pyroelectric sensitive unit comprises an insulating layer, an upper electrode layer, a pyroelectric sensitive film and a lower electrode layer which are sequentially arranged from top to bottom; the flexible infrared radiation modulation mechanism is arranged on the insulating layer and comprises 1 or 2 supporting columns and a metal film, and the metal film is arranged on the supporting columns to form a single-ended or double-ended cantilever beam; the metal film of the cantilever beam and the upper electrode layer of the flexible infrared pyroelectric sensitive unit are connected with a voltage source through a circuit switch, and the circuit switch can be controlled through a switch control circuit; a voltage signal with certain frequency and amplitude is applied between the metal film of the cantilever beam and the upper electrode layer of the flexible infrared pyroelectric sensitive unit, and the metal film of the cantilever beam can move up and down in a certain range according to corresponding frequency so as to be periodically separated from and contacted with the insulating layer of the flexible infrared pyroelectric sensitive unit, so that heat flow generated by incident infrared radiation is periodically transmitted to the pyroelectric sensitive film to cause the temperature of the pyroelectric sensitive film to be periodically changed.
2. The fully flexible pyroelectric infrared detector as claimed in claim 1, wherein: the support column can be made of silicon oxide, silicon nitride and polysilicon inorganic materials, or polyimide and Polydimethylsiloxane (PDMS) organic materials, or common metal materials such as aluminum, nickel, chromium, copper, gold and titanium.
3. The fully flexible pyroelectric infrared detector as claimed in claim 1 or 2, wherein: the single-ended cantilever beam further comprises a limiting structure arranged on the insulating layer and used for limiting an upper intercept point of the upward movement of the metal film of the cantilever beam.
4. The fully flexible pyroelectric infrared detector as claimed in claim 1, wherein: the metal film of the cantilever beam can be prepared from common easily-processed metal materials such as aluminum, nickel, chromium, copper, gold and titanium.
5. The fully flexible pyroelectric infrared detector as claimed in claim 1, wherein: the insulating layer can be made of silicon oxide, silicon nitride, polysilicon inorganic material, or polyimide, Polydimethylsiloxane (PDMS) organic material.
6. The fully flexible pyroelectric infrared detector as claimed in claim 1, wherein: the pyroelectric sensitive film can be prepared by flexible pyroelectric polymers of polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polyvinylidene fluoride-trifluoroethylene, odd nylon, polyvinyl chloride or polypropylene, or a doping system taking the flexible pyroelectric polymers as a main body and a doping system doped with barium strontium titanate and lead zirconate titanate inorganic ferroelectric ceramics.
7. The fully flexible pyroelectric infrared detector as claimed in claim 1, wherein: the circuit switch and the switch control circuit can be realized by a separated circuit module or an integrated circuit.
8. The fully flexible pyroelectric infrared detector as claimed in claim 1, wherein: the fully flexible pyroelectric infrared detector can be partially or completely realized by adopting a flexible film process and a micromachining process from bottom to top according to requirements.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111486973A (en) * | 2020-03-30 | 2020-08-04 | 成都众芯科技有限公司 | Full-flexible pyroelectric infrared detector |
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2020
- 2020-03-30 CN CN202020440316.3U patent/CN212363451U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111486973A (en) * | 2020-03-30 | 2020-08-04 | 成都众芯科技有限公司 | Full-flexible pyroelectric infrared detector |
| CN111486973B (en) * | 2020-03-30 | 2024-07-19 | 四川新辉医疗科技有限公司 | Full-flexible pyroelectric infrared detector |
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