CN206635021U - A kind of beam type diaphragm pressure electrification structure - Google Patents
A kind of beam type diaphragm pressure electrification structure Download PDFInfo
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- CN206635021U CN206635021U CN201720333432.3U CN201720333432U CN206635021U CN 206635021 U CN206635021 U CN 206635021U CN 201720333432 U CN201720333432 U CN 201720333432U CN 206635021 U CN206635021 U CN 206635021U
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Abstract
The utility model belongs to micro electro mechanical system field, specially a kind of beam type diaphragm pressure electrification structure, including frame-type substrate, the beam of frame-type substrate opening face is provided with vacantly in the intrabasement silicon cantilever of frame-type, the free end of silicon cantilever is fixed with mass, silicon dioxide insulating layer is additionally provided with above the beam of frame-type substrate opening face, silicon dioxide insulating layer is provided with bottom electrode layer, the strip bottom electrode layer being extended with bottom electrode layer towards frame-type substrate open side above silicon cantilever, mass is provided with PZT piezoelectric layers, PZT piezoelectric layers are extended with the strip PZT piezoelectric layers above strip bottom electrode layer towards silicon dioxide insulating layer direction, top electrode layer is provided with above strip PZT piezoelectric layers.When system is in vibration environment, vibrational energy in external environment is delivered in system, is caused silicon cantilever vibration and flexural deformation, silicon cantilever is stored mechanical energy, so as to cause the flexible of piezoelectric layer and then produce electric signal, conversion of the mechanical energy to electric energy is realized.
Description
Technical field
The utility model belongs to micro electro mechanical system field, specially a kind of beam type diaphragm pressure electrification structure.
Background technology
MEMS（Micro-Electro-Mechanical System, MEMS）Technology be using microelectric technique as
Basis, the revolutionary new technology of the multi-crossed disciplines such as sound, light, electricity, material, mechanics, chemistry.It uses semiconductor machining work
Skill, the key technologies such as photoetching, burn into etching, deposition are merged, has been directed to making and collects sensor, actuator and micro- energy in one
The ultramicro minitype intelligent chip of body.MEMS technology gradually developed by microelectric technique during silicon micro-sensor is researched and developed and
Come, be initially applied to silicon piezoresistance type pressure sensor.With the development and popularization of the technology, prepared with MEMS technology
All kinds of silicon based sensors, such as pressure sensor, accelerometer, temperature sensor, gas sensor, integrating optical sensor, with
Its precision is high, cost is low, small volume, high reliability realize rapidly commercialization.As the typical generation in silicon based sensor
Table, silicon pressure sensor have manufacture craft maturation, stable work in work, cost performance ratio, are widely used in vapour
Turner industry, automatically control, space flight navigation, health care and Military Application etc..Pressure sensor is mainly with difference in functionality device
Part realizes that single chip integrated intelligent sensing micro-system is goal in research on a silicon substrate, realizes high sensitivity, small-range, senior engineer
Make temperature, pressure detection, to meet the job requirement of different field.
The device such as the competition field scoreboard such as tae kwon do, martial arts performance and lighting apparatus is all logical among sports tournament at present
External power supply work is crossed, does not meet energy-conserving and environment-protective principle, the kinetic energy that the sportsman on competition field consumes has not been utilized
Come, the utility model is with regard to current this problem, there is provided a kind of beam type diaphragm pressure electrification structure.
The content of the invention
The utility model is in order to solve the above problems, there is provided a kind of beam type diaphragm pressure electrification structure, and carry
The operation principle for having supplied the film of beam type ring resonator to generate electricity.
The utility model adopts the following technical scheme that realization：A kind of beam type diaphragm pressure electrification structure, bag
Frame-type substrate, a side opening of frame-type substrate are included, the beam of frame-type substrate opening face is provided with vacantly in the intrabasement silicon of frame-type
Cantilever beam, the free end of silicon cantilever are fixed with mass, and it is exhausted to be additionally provided with silica above the beam of frame-type substrate opening face
Edge layer, silicon dioxide insulating layer are provided with bottom electrode layer, are extended with bottom electrode layer towards frame-type substrate open side positioned at silicon cantilever
Strip bottom electrode layer above beam, mass are provided with PZT piezoelectric layers, and PZT piezoelectric layers extend towards silicon dioxide insulating layer direction
There are the strip PZT piezoelectric layers above strip bottom electrode layer, top electrode layer is provided with above strip PZT piezoelectric layers.
The utility model cantilever beam structure purpose of design is in order that cantilever beam is in vibration environment, can realize resonance
Pattern, therefore need to make the vibration frequency of cantilever beam approach with environmental vibration frequency.Due to being shaken frequently in the prevalence of main in environment
Low-frequency vibration source of the rate between 100-500Hz, therefore, the piezoelectric cantilever of the utility model design will meet that resonant frequency exists
Between 100-500Hz, so that cantilever beam reaches resonance, maximum output electric energy in these vibration sources.It is lower humorous in order to obtain
Vibration frequency, mass is added in the free end of cantilever beam, while appropriate increase width, structural representation are as shown in Figure 1.
The free end increase lumped mass block of piezoelectric cantilever, has the outstanding advantages of following two aspects, can reduce cantilever first
The intrinsic frequency of beam, make the intrinsic frequency of structure identical or close with environmental vibration frequency, so that the vibration system of piezo-electric generating
System works under resonance state.Secondly, free end lumped mass adds inertia force, so as to increase the deformation of cantilever beam, that is, increases
Add the mechanical energy of input piezoelectric layer, output electric energy is also just correspondingly improved.When the system is in vibration environment, external environment
In vibrational energy be delivered in system, cause cantilever beam vibration and flexural deformation, cantilever beam is stored mechanical energy, allow cantilever beam with
Piezoelectric layer is combined, and so as to cause the flexible of piezoelectric layer and then produce electric signal, realizes conversion of the mechanical energy to electric energy.
Brief description of the drawings
Fig. 1 is beam type film electrification structure schematic diagram.
Fig. 2 is that beam type film electrification structure is layered schematic diagram.
Fig. 3 is beam type film generating mechanism operation principle schematic diagram.
In figure：1- frame-type substrates, 2- silicon cantilevers, 3- masses, 4- silicon dioxide insulating layers, 5- bottom electrode layers, 6-PZT
Piezoelectric layer, 7- top electrode layers.
Embodiment
A kind of beam type diaphragm pressure electrification structure, including frame-type substrate 1, a side opening of frame-type substrate 1, frame-type base
The beam of bottom opening face is provided with vacantly in the intrabasement silicon cantilever 2 of frame-type, and the free end of silicon cantilever 2 is fixed with mass
3, the width of mass 3 is more than the width of silicon cantilever 2, and silicon dioxide insulator is additionally provided with above the beam of frame-type substrate opening face
Layer 4, silicon dioxide insulating layer 4 is provided with Pt/Ti（Platinum plating above titanium）Bottom electrode layer 5, towards frame-type base on Pt/Ti bottom electrode layers 5
Bottom opening side is extended with the strip Pt/Ti bottom electrode layers 5 above silicon cantilever, and mass is provided with PZT piezoelectric layers 6, PZT
Piezoelectric layer 6 is extended with the strip PZT piezoelectric layers 6 above strip bottom electrode layer, strip PZT towards silicon dioxide insulating layer direction
Pt/Ti top electrode layers 7 are provided with above piezoelectric layer.
Fig. 3 is beam type film generating mechanism operation principle schematic diagram, and its operation principle is：When system is in oscillation ring
When in border, the vibrational energy in external environment is delivered in system, is caused silicon cantilever vibration and flexural deformation, is stored up silicon cantilever
Mechanical energy is deposited, so as to cause the flexible of piezoelectric layer and then produce electric signal, realizes conversion of the mechanical energy to electric energy.
Claims (1)
1. a kind of beam type diaphragm pressure electrification structure, it is characterised in that including frame-type substrate（1）, frame-type substrate（1）One
Side opening, the beam of frame-type substrate opening face are provided with vacantly in the intrabasement silicon cantilever of frame-type（2）, silicon cantilever（2）'s
Free end is fixed with mass（3）, the beam top of frame-type substrate opening face is additionally provided with silicon dioxide insulating layer（4）, titanium dioxide
Silicon insulating barrier（4）It is provided with bottom electrode layer（5）, bottom electrode layer（5）On be extended with towards frame-type substrate open side positioned at silicon cantilever
The strip bottom electrode layer of top（5）, mass（3）It is provided with PZT piezoelectric layers（6）, PZT piezoelectric layers（6）Towards silicon dioxide insulator
Layer direction is extended with the strip PZT piezoelectric layers above strip bottom electrode layer（6）, strip PZT piezoelectric layers top is provided with top electricity
Pole layer（7）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720333432.3U CN206635021U (en) | 2017-03-31 | 2017-03-31 | A kind of beam type diaphragm pressure electrification structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720333432.3U CN206635021U (en) | 2017-03-31 | 2017-03-31 | A kind of beam type diaphragm pressure electrification structure |
Publications (1)
| Publication Number | Publication Date |
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| CN206635021U true CN206635021U (en) | 2017-11-14 |
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| CN201720333432.3U Expired - Fee Related CN206635021U (en) | 2017-03-31 | 2017-03-31 | A kind of beam type diaphragm pressure electrification structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106966356A (en) * | 2017-03-31 | 2017-07-21 | 中北大学 | A kind of beam type diaphragm pressure electrification structure |
-
2017
- 2017-03-31 CN CN201720333432.3U patent/CN206635021U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106966356A (en) * | 2017-03-31 | 2017-07-21 | 中北大学 | A kind of beam type diaphragm pressure electrification structure |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171114 Termination date: 20200331 |
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| CF01 | Termination of patent right due to non-payment of annual fee |