CN112082967A - Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor - Google Patents

Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor Download PDF

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CN112082967A
CN112082967A CN202010987165.8A CN202010987165A CN112082967A CN 112082967 A CN112082967 A CN 112082967A CN 202010987165 A CN202010987165 A CN 202010987165A CN 112082967 A CN112082967 A CN 112082967A
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infrared
gas sensor
ultra
light source
compact
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CN112082967B (en
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牟笑静
李东晓
周鸿�
惠新丹
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Chongqing University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0019—Circuit arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • G01N2021/0112—Apparatus in one mechanical, optical or electronic block
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N2021/3129—Determining multicomponents by multiwavelength light

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Abstract

The invention relates to the technical field of gas sensors, in particular to an ultra-narrow band infrared heat radiation light source and a compact infrared gas sensor. The heating plate both sides all are equipped with first insulating layer. The compact infrared gas sensor comprises a gas chamber, an infrared emitter and an infrared detector, wherein the infrared emitter uses the ultra-narrow-band infrared thermal radiation light source, the inner wall of the gas chamber is provided with a reflecting layer, and the infrared detector comprises a second substrate, a heat insulation microbridge, a heat sensitive layer and a super surface. The compact infrared gas sensor of low radiation of this application can solve the problem such as traditional infrared gas sensor is bulky, with high costs, has advantages such as small, low power dissipation, with low costs, can multiple gaseous simultaneous detection.

Description

Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor
Technical Field
The invention relates to the technical field of gas sensors, in particular to an ultra-narrow band infrared thermal radiation light source and a compact infrared gas sensor.
Background
A gas sensor is a transducer that converts a certain gas volume fraction into a corresponding electrical signal.
The application of the gas sensor in the civil field is mainly embodied as follows: in the kitchen, the leakage of civil gas such as natural gas, liquefied petroleum gas, city gas and the like is detected, and the gas generated during the cooking of food in the microwave oven is detected, so that the microwave oven is automatically controlled to cook the food; the carbon dioxide sensor, the smoke sensor, the ozone sensor and the like are used in houses, buildings, meeting rooms and public entertainment places to control the automatic operation of the air purifier or the electric fan; in some high-rise buildings, the gas sensor may also be used to detect fire stutter and to alarm.
In the industrial field, gas sensors are mainly used in the petrochemical industry, and some carbon dioxide sensors, ammonia sensors, nitric oxide sensors and the like can be used in specific applications for detecting harmful gases such as carbon dioxide, ammonia gas, chlorine gas and the like. In addition, the method can be used for detecting organic solvents, phosphanes and other extremely toxic gases in the semiconductor and microelectronic industries; in the aspect of power industry, a hydrogen sensor can detect hydrogen generated in the deterioration process of power transformer oil; in the food industry, the gas sensor can also detect the freshness of perishable foods such as meat; in the fruit and vegetable preservation application, the gas sensor detects the concentration meters of oxygen, ethylene and carbon dioxide in the preservation warehouse so as to ensure the freshness and safety of fruits; the method has wide requirements in the aspects of detecting oxygen in waste gas in the automobile and kiln industry, detecting the concentration of ethanol gas in breath of drivers in road traffic and the like.
In the field of environmental monitoring most close to life, gas sensors are naturally not available. For example, a gas causing acid rain, such as nitrogen oxide, sulfur oxide, and hydrogen chloride, is detected by a sensor; carbon dioxide sensors, ozone sensors, freon, and the like detect greenhouse gases and the like.
In recent years, with the rise of high-tech fields such as internet of things, intelligent robots, wearable electronics and the like, the demand for compact and small gas sensors becomes increasingly strong. The traditional infrared gas sensor has the defect of large volume, so that the application of the traditional infrared gas sensor in a plurality of fields is limited. Therefore, the development of a plurality of emerging industries such as miniaturization and compact infrared gas sensors, assisted internet of things, artificial intelligence and the like is urgently needed.
Disclosure of Invention
The invention aims to provide an ultra-narrow-band infrared thermal radiation light source and a compact infrared gas sensor, which can solve the problem of large volume of the traditional infrared gas sensor and have the advantages of small volume, low power consumption, low cost, capability of simultaneously detecting various gases and the like.
The application provides the following technical scheme:
the utility model provides an ultra-narrow band infrared thermal radiation light source, includes first substrate, and first substrate top is equipped with the hot plate, and the hot plate top is equipped with the metamaterial absorber, the metamaterial absorber includes metal sheet and microarray structure, the microarray structure sets up in the metal sheet top, the microarray structure includes dielectric layer and metal antenna.
Further, the sealing layer is arranged above the metamaterial absorber and used for sealing the metamaterial absorber.
The corresponding metal structure is protected from oxidation during repeated thermal cycling by the sealing layer.
Further, a supporting layer is arranged between the first substrate and the heating plate, and the supporting layer is provided with a cavity structure.
The heating plate and the substrate are isolated by the supporting layer and the cavity structure, and the CMOS substrate is prevented from being thermally damaged when the heating plate works.
Furthermore, first insulating layers are arranged between the heating plate and the supporting layer and between the heating plate and the metamaterial absorber.
The first insulating layer is arranged to prevent direct contact between the parts.
The invention further discloses a compact infrared gas sensor which comprises a gas chamber, wherein the gas chamber is provided with a gas inlet and a gas outlet, an infrared emitter and an infrared detector are arranged in the gas chamber, and the infrared emitter uses the ultra-narrow-band infrared thermal radiation light source.
Furthermore, the inner wall of the air chamber is provided with a reflecting layer.
Through the reflecting layer, the infrared light can be reflected for many times in the air chamber, the contact frequency of the infrared light and the gas can be greatly increased, the sensitivity is further improved, and the size of the sensor is further reduced.
Further, the infrared detector sequentially comprises a second substrate, a heat insulation microbridge, a heat sensitive layer and a super surface from bottom to top.
Through super surface, utilize metamaterial wavelength to select absorption characteristic for infrared detector is from taking filtering function, need not the use of filter, reduction infrared detector's that can be very big volume.
Further, a second insulating layer is arranged between the second substrate and the support column of the heat insulation microbridge and between the heat sensitive layer and the super surface.
The parts are separated by the second insulating layer to avoid direct contact.
Furthermore, infrared emitter and infrared detector all are equipped with a plurality of, infrared emitter and infrared detector are all arranged in array.
Through the arraying of infrared transmitter and infrared detector and the structure and the size that change the metamaterial, can realize the filtering function of different wave bands for infrared transmitter and infrared detector can form the infrared emission light source of a plurality of wave bands and the infrared detector that a plurality of wave bands detected, and then can realize many gaseous sensing.
The technical scheme of the invention has the beneficial effects that:
the ultra-narrow band infrared thermal radiation light source uses the metamaterial absorber to have the filtering function, does not need a filter, has narrow radiation spectral band width, can greatly reduce the volume of the infrared gas sensor, is favorable for realizing the miniaturization of the infrared gas sensor, is convenient for the integration of a detection instrument, has low processing cost, and is favorable for mass production and large-scale use.
According to the compact infrared gas sensor, the metamaterial is integrated into the infrared emitter and the infrared detector, the wavelength selective absorption characteristic of the metamaterial is utilized, the infrared emitter and the infrared detector are provided with filtering functions, the size of the infrared emitter and the size of the infrared detector are greatly reduced, compared with the traditional infrared gas sensor, the infrared gas sensor eliminates the use of a filter plate, and the integration level and flexibility of the infrared emitter and the infrared detector are increased while the cost is reduced. Simultaneously, this scheme introduces all-metal air chamber, makes infrared light multiple reflection in the cavity, very big increase the number of times of light and gas contact, the effectual detectivity that improves can further reduce infrared gas sensor's volume. Through changing the structure and the size of the metamaterial, the filtering function of different wave bands can be realized, and then, through the arraying of the infrared emitter and the infrared detector, the sensing of various gases can be realized, so that the simultaneous detection of various gases can be realized, and the cost and the volume of the sensor can be further reduced.
Drawings
FIG. 1 is a schematic structural view of an embodiment of an ultra-narrow band infrared thermal radiation light source of the present application;
FIG. 2 is a cross-sectional view of an embodiment of an ultra-narrow band infrared thermal radiation light source of the present application;
FIG. 3 is a schematic view of a heating plate according to an embodiment of the ultra-narrow band infrared thermal radiation light source of the present application;
FIG. 4 is a schematic structural diagram of another embodiment of a heating plate for an ultra-narrow band infrared thermal radiation light source according to the present application;
FIG. 5 is a schematic structural diagram of another embodiment of a heating plate for an ultra-narrow band infrared thermal radiation light source according to the present application;
FIG. 6 is a spectral diagram of an ultra-narrow band infrared thermal radiation source of the present application;
FIG. 7 is a schematic diagram of a compact infrared gas sensor according to the present application;
fig. 8 is a schematic structural diagram of an infrared detector in an implementation of a compact infrared gas sensor according to the present application.
Detailed Description
The technical scheme of the application is further explained in detail through the following specific implementation modes:
the reference numbers in the drawings of the specification include: the device comprises a first substrate 1, a support layer 2, a first insulating layer 3, a heating plate 4, a metal plate 6, a dielectric layer 7, a metal antenna 8, a sealing layer 9, an air inlet 10, an air outlet 11, a printed circuit board 12, an infrared emitter 13, an infrared detector 14, an air chamber 15, a second substrate 16, a heat insulation micro-bridge 17, a heat sensitive layer 18 and a super surface 19.
Examples
As shown in fig. 1 and fig. 2, the present embodiment discloses an ultra-narrow band infrared thermal radiation light source, which comprises, from bottom to top: a first substrate 1, a support layer 2, a heating plate 4, a metamaterial absorber, and a sealing layer 9.
The first substrate 1 is a CMOS substrate, the supporting layer 2 is deposited on the first substrate 1 and forms a cavity structure, first insulating layers 3 are arranged between the heating plate 4 and the supporting layer 2 and between the heating plate 4 and the metamaterial absorber, one insulating layer is deposited on the supporting layer 2, one insulating layer is deposited on the heating plate 4, and the first insulating layer 3 can be arranged to avoid direct touch among all parts.
In this embodiment, the heating plate 4 is the MEMS heating plate 4, and the metamaterial absorber includes metal plate 6 and microarray structure, and metal plate 6 is connected with the insulating layer above the heating plate 4, the microarray structure includes graphical dielectric layer 7 and metal antenna 8, the microarray structure sets up in metal plate 6 top, and dielectric layer 7 and metal antenna 8 deposit in proper order above metal plate 6 promptly, form microarray structure. A sealing layer 9 is arranged on top of the microarray structure for sealing it against oxidation of the respective metal structure during repeated thermal cycling.
The thickness of the support layer 2 is 50-1000 nm, and the material of the support layer 2 can be silicon oxide, aluminum oxide, silicon nitride or boron nitride.
The thickness of the first insulating layer 3 is 50-1000 nm, and the material of the first insulating layer 3 is silicon oxide, aluminum oxide, silicon nitride or boron nitride.
The MEMS heating plate 4 is made of polysilicon, Pt or W, etc., has a thickness of 0.2-1 μm when made of polysilicon, and is in the shape of a disk or a square disk, and has a thickness of 100-500 nm when made of Pt or W, and a zigzag structure.
The metal plate 6 has a thickness of 30-200nm and is made of one of Au, Ag, Al, Ti, Ba and Cu.
The dielectric layer 7 is a film with a thickness of 50-300 nanometers, is patterned by adopting a reactive ion etching process, and can be made of silicon, silicon oxide, silicon nitride, zinc oxide, zinc sulfide, zinc selenide, indium phosphide, germanium, indium sulfide, magnesium fluoride, calcium fluoride or the like.
The metal antenna 8 is formed by sputtering 30-200nm metal on the patterned dielectric layer 7, and the material thereof may be gold, silver, aluminum, tungsten, titanium, platinum or copper.
The thickness of the sealing layer 9 is 10-300 nanometers, and the material of the sealing layer 9 is Al2O3, SiO2 or Si3N 4.
Specifically, in the present embodiment, the material of the support layer 2 is preferably SiO2, and the thickness thereof is 200 nm. The insulating layer is preferably made of SiO2 and has a thickness of 200 nm. The MEMS heating plate 4 is preferably made of polysilicon with a thickness of 500nm, and has a shape as shown in fig. 3, and in other embodiments of the present application, the shape of the MEMS heating plate 4 can be set to other shapes, such as the shapes shown in fig. 4 or fig. 5. The material of the metal plate 6 is preferably Cu, and the thickness thereof is 100nm and the diameter thereof is 400 μm. The material of the dielectric layer 7 is preferably Al2O3, and the thickness thereof is 200 nm. The material of the patterned dielectric layer 7 is preferably magnesium fluoride, and the thickness is 340 nm. The metal antenna 8 is preferably made of gold and has a thickness of 100 nm. The sealing layer 9 is preferably made of Al2O3 and has a thickness of 10 nm. As shown in fig. 6, the spectral image of the ultra-narrow band infrared thermal radiation light source in this embodiment is seen, the wavelength is concentrated to about 3.0, the half-peak width is only 16 nm, and the radiation spectral bandwidth is narrow.
The implementation also discloses a preparation method of the ultra-narrow band infrared thermal radiation light source, which comprises the following steps:
s1: cleaning a substrate of a CMOS integrated circuit processed by a standard commercial manufacturing process, preparing a supporting layer 2 with the thickness of 50-1000 nm above the substrate, etching to form a cavity structure, and depositing a sacrificial layer in the cavity;
s2: depositing a 50-1000 nm insulating layer on the supporting layer 2 prepared in the S1;
s3: preparing the MEMS heating plate 4 on the insulating layer deposited at S2;
s4: preparing an insulating layer of 50-1000 nm above the MEMS heating plate 4 prepared in S3;
s5: preparing a metal plate 6 with the thickness of 30-200nm on the insulating layer in the S4;
s6: depositing a film of 50-300nm on the metal plate 6 in S5, and forming a patterned dielectric layer 7 by adopting a reactive ion etching process;
s7: sputtering 30-200nm of metal on the patterned dielectric layer 7 in the step S6 to form a metal antenna 8;
s8: manufacturing a sealing layer 9 with the thickness of 10-300nm above the metal antenna 8 in S7;
s9: and removing the sacrificial layer in the S8 to finish the preparation.
As shown in fig. 7, in this embodiment, a compact infrared gas sensor is further disclosed, which includes a gas chamber 15, where the gas chamber 15 is provided with a gas inlet 10 and a gas outlet 11, and an infrared emitter 13 and an infrared detector 14 are arranged in the gas chamber 15, specifically, in this embodiment, the infrared emitter 13 and the infrared detector 14 are both arranged on a printed circuit board 12, and a corresponding signal control or signal output circuit and the like may also be arranged on the circuit board to implement the functions of outputting and controlling the sensing data, and the details are not repeated herein. The infrared emitter 13 uses the ultra-narrow band infrared thermal radiation light source disclosed in this embodiment.
When the gas-filled infrared detector works, gas enters the gas chamber 15 from the gas inlet 10 and escapes from the gas outlet 11, the corresponding circuit of the printed circuit board 12 drives the infrared emitter 13 to emit infrared light, the infrared light is reflected in the gas chamber 15 for multiple times, and finally, the infrared light is detected by the infrared detector 14 and converted into an electric signal to be output. In order to increase the sensitivity of the sensor, the inner wall of the air chamber 15 is provided with a reflecting layer, so that infrared light can be reflected in the cavity for multiple times, and further the sensitivity is improved, the reflecting layer can be a metal layer or other coatings, in the implementation, the air chamber 15 adopts the all-metal air chamber 15, the inner surface of the air chamber 15 can effectively reflect the infrared light, the contact frequency of the light and the gas can be greatly increased, the sensitivity is improved, and the reduction of the volume of the infrared gas sensor is facilitated.
As shown in fig. 8, the infrared detector 14 includes, from bottom to top, a second substrate 16, a thermally insulating microbridge 17, a thermally sensitive layer 18, and a super-surface 19. And a second insulating layer is arranged between the second substrate 16 and the support columns of the heat-insulating microbridge 17 and between the heat-sensitive layer 18 and the super-surface 19. The second substrate 16 is also a CMOS substrate, and the second insulating layer is made of the same material as the first insulating layer 3.
In this embodiment, the infrared emitters 13 and the infrared detectors 14 are respectively provided with a plurality of infrared emitters 13 and infrared detectors 14, and the infrared emitters 13 and the infrared detectors 14 are respectively arranged in an array. The infrared emitters 13 and the infrared detectors 14 arranged in an array form infrared emission light sources of multiple wave bands and infrared detectors 14 for detection of multiple wave bands, so that multi-gas sensing can be realized.
The compact infrared gas sensor of this embodiment, in integrating the metamaterial to infrared emitter 13 and infrared detector 14, utilize the wavelength of metamaterial to select absorption characteristic, make infrared emitter 13 and infrared detector 14 from the filtering capability that takes, very big reduction infrared emitter 13 and infrared detector 14's volume, compare with traditional infrared gas sensor, this infrared gas sensor has eliminated the use of filter, increased infrared emitter 13 and infrared detector 14's integrated level and flexibility when reduce cost. Meanwhile, the all-metal gas chamber 15 is introduced, so that infrared light is reflected in the cavity for multiple times, the contact frequency of light and gas is greatly increased, the detection sensitivity is effectively improved, and the size of the infrared gas sensor can be further reduced. Through changing the structure and the size of the metamaterial, the filtering function of different wave bands can be realized, and then through the arraying of the infrared emitter 13 and the infrared detector 14, the sensing of various gases can be realized, so that the simultaneous detection of various gases is realized, and the cost and the volume of the sensor are further reduced.
The above are merely examples of the present invention, and the present invention is not limited to the field related to this embodiment, and the common general knowledge of the known specific structures and characteristics in the schemes is not described herein too much, and those skilled in the art can know all the common technical knowledge in the technical field before the application date or the priority date, can know all the prior art in this field, and have the ability to apply the conventional experimental means before this date, and those skilled in the art can combine their own ability to perfect and implement the scheme, and some typical known structures or known methods should not become barriers to the implementation of the present invention by those skilled in the art in light of the teaching provided in the present application. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several changes and modifications can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicability of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.

Claims (9)

1. An ultra-narrow band infrared thermal radiation light source, characterized in that: the metamaterial antenna comprises a first substrate, a heating plate is arranged above the first substrate, a metamaterial absorber is arranged above the heating plate and comprises a metal plate and a microarray structure, the microarray structure is arranged above the metal plate, and the microarray structure comprises a dielectric layer and a metal antenna.
2. An ultra-narrow band infrared thermal radiation light source as defined in claim 1, wherein: the sealing layer is arranged above the metamaterial absorber and used for sealing the metamaterial absorber.
3. An ultra-narrow band infrared thermal radiation light source as defined in claim 2, wherein: and a supporting layer is arranged between the first substrate and the heating plate, and the supporting layer is provided with a cavity structure.
4. An ultra-narrow band infrared thermal radiation light source as defined in claim 3, wherein: and first insulating layers are arranged between the heating plate and the supporting layer and between the heating plate and the metamaterial absorber.
5. The utility model provides an infrared gas sensor of compact, includes the air chamber, the air chamber is equipped with air inlet and gas outlet, its characterized in that: an infrared emitter and an infrared detector are arranged in the gas chamber, and the infrared emitter uses the ultra-narrow band infrared heat radiation light source as claimed in any one of claims 1-4.
6. A compact infrared gas sensor according to claim 5 wherein: and a reflecting layer is arranged on the inner wall of the air chamber.
7. A compact infrared gas sensor according to claim 5 wherein: the infrared detector sequentially comprises a second substrate, a heat insulation microbridge, a heat sensitive layer and a super surface from bottom to top.
8. A compact infrared gas sensor according to claim 7 wherein: and second insulating layers are arranged between the second substrate and the support columns of the heat insulation microbridge and between the thermosensitive layer and the super surface.
9. A compact infrared gas sensor according to claim 5 wherein: the infrared emitter and the infrared detector are respectively provided with a plurality of infrared emitters, and the infrared emitters and the infrared detectors are arranged in an array mode.
CN202010987165.8A 2020-09-18 2020-09-18 Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor Active CN112082967B (en)

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Cited By (3)

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CN113203476A (en) * 2021-04-07 2021-08-03 华南师范大学 Narrow-band mid-infrared thermal radiation source and preparation method thereof
CN114324225A (en) * 2021-09-08 2022-04-12 中山大学 Micro-nano device capable of regulating spectral response and applied to gas sensing
CN117553252A (en) * 2024-01-12 2024-02-13 深圳市美思先端电子有限公司 MEMS infrared light source component and detection device based on piezoelectric film modulation

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