CN103500770A - Infrared gas sensor for detecting a variety of gases - Google Patents

Infrared gas sensor for detecting a variety of gases Download PDF

Info

Publication number
CN103500770A
CN103500770A CN201310500970.3A CN201310500970A CN103500770A CN 103500770 A CN103500770 A CN 103500770A CN 201310500970 A CN201310500970 A CN 201310500970A CN 103500770 A CN103500770 A CN 103500770A
Authority
CN
China
Prior art keywords
infrared
gas concentration
concentration sensor
gas
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310500970.3A
Other languages
Chinese (zh)
Other versions
CN103500770B (en
Inventor
谭秋林
陈媛靖
熊继军
薛晨阳
张文栋
刘俊
毛海央
明安杰
欧文
陈大鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North University of China
Original Assignee
North University of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North University of China filed Critical North University of China
Priority to CN201310500970.3A priority Critical patent/CN103500770B/en
Publication of CN103500770A publication Critical patent/CN103500770A/en
Application granted granted Critical
Publication of CN103500770B publication Critical patent/CN103500770B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The invention discloses an infrared gas sensor for detecting a variety of gases. An infrared radiation source and a plurality of thermopile sensors are produced into the same chip by adopting the standard CMOS/MEMS (Complementary Metal Oxide Semiconductors/Micro-electromechanical Systems) process, and the thermal crosstalk between coplanar sensors is reduced by means of thermal isolation walls, thermal isolation channels and vacuum wafer level aligned packaging between the chips. A singlechip integration technique is adopted to simultaneously process a plurality of sensors, filters of different narrow bands are adopted to be respectively assembled on the coplanarly arranged sensors, consequently, different gases can be spectroscopically detected, the processing cost is greatly reduced, meanwhile, thermal crosstalk and power consumption are reduced, and moreover, the precision of detection is further increased.

Description

The infrared gas sensor that a kind of many gas detects
Technical field
The present invention relates to the infrared gas sensor technical field, the infrared gas sensor that in particular a kind of many gas detects.
Background technology
Developing into of technology of Internet of things is integrated, low-power consumption, infrared gas sensor has brought application demand widely cheaply.In industry and daily life, realize dangerous material gas, such as CO, CO 2, NO, NO 2, CH 4highly sensitive detection, can avoid it to reveal the significant damage that social property and public safety are caused.Improve the transducer detection performance and portable in, realize that multiple gases is contactless to detect simultaneously, meet Internet of Things, the complex environment growth requirement to micro-infrared multi-gas sensor.Infrared gas sensor is with the development of MEMS and CMOS technology, be achieved the microminiaturization of infrared optics gas detecting system, with traditional gas sensor, compare, at aspects such as stability, power consumption, sensitivity, reliability, useful life, the response recovery be exceedingly fast and costs, significant advantage is arranged.
Rae System company proposed discrete infrared light supply, detector, air chamber are integrated in to a TO in 2002 5as the infrared gas sensor of miniaturization, and can be used in detection of hydrocarbon HC, carbon dioxide CO in shell 2, carbon monoxide CO and nitric oxide NO gas concentration, but and unrealized multiple gases detect simultaneously, before multiple gases is detected, having needed to separate has increased the complexity and the cost that detect.
Summary of the invention
Technical problem to be solved by this invention is the infrared gas sensor that provides a kind of many gas to detect for the deficiencies in the prior art.
Technical scheme of the present invention is as follows:
The infrared gas sensor that at first the present invention provides a kind of many gas to detect, comprise four responsive units, be respectively: the first responsive unit (1), the second responsive unit (2), the 3rd responsive unit (3) and the responsive unit of reference (4), four responsive units are distributed on take on the circumference that nano-sized surface modification infrared light supply (6) is the center of circle, the heat insulation raceway groove (5) of a L-type wherein is set between the first responsive unit (1), the second responsive unit (2), the heat insulation raceway groove (5) of a L-type also is set between the 3rd responsive unit (3) and the responsive unit of reference (4); Four responsive units and nano-sized surface modification infrared light supply (6) is peripheral by hot divider wall (7), realizes heat isolation each other, reduce hot impact of crosstalking; The narrow band filter slice wave band of reference sensitivity unit covers the first responsive unit (1), the second sensitivity unit (2), the 3rd responsive unit (3), by the responsive first signal to other three transducers of reference, is calculated and compensate correction.
Described infrared gas sensor, the described first responsive unit (1), the second responsive unit (2), the 3rd responsive unit (3) and the responsive unit of reference (4) are distributed on the focus through the ellipse of light source (5).
The present invention also provides the preparation technology of described nano-sized surface modification infrared light supply (6), and step is as follows:
(a), at the upper grown silicon nitride (62) of monocrystalline substrate (61), experiment condition: 780 ℃ of temperature, 330mTorr, Six 2cl 2: 24sccm, NH 3: 90sccm;
(b), the deposit of amorphous silicon (63): temperature is 270 ℃, and gas ratio is respectively SIH 4: 24%NH 3: 55%N 2: 5.2%RF:170;
(c), Al sputter and annealing: magnetron sputtering Al, condition: air pressure 10mTorr, after passing into Ar and meeting air pressure conditions, it is 8400W that RF is set, and then 450 ℃ of lower 90min times, carries out annealing in process;
(d), wet etching Al film: adopt conventional Al corrosive liquid, the remaining Al-Si compound particle of sample surfaces after corrosion;
(e), amorphous silicon dry etching: adopt Cl 2180sccm, pressure 300mTorr, RF350W, He200sccm, temperature 35-40 ℃, micro-shelter that after etching completes, formation surface metal silicide forms;
(f), the etching of positive release aperture, for discharging monocrystalline substrate, prepare: gas CHF 37sccm, He100sccm, SF 630sccm, RF150W, pressure 400mTorr; Adopt the method for magnetron sputtering, the TiN clad metal silicide of sputter 40-50A and amorphous silicon skin, condition is Ar22.4sccm, N 23.0sccm pressure is 5e-3Torr, power is 1000W, and vacuum degree is 8e-7Pa;
(g), XeF 2the positive silicon substrate that discharges, form micro-cantilever infrared light supply supported, and condition is XeF 24Torr, N 220mTorr, temperature is 20 ℃.
The present invention also provides the responsive unit of reference the signal of other three transducers to be calculated and compensates the method for correction, and concrete steps are: the output signal of described infrared-gas concentration sensor is divided into the output signal U of the responsive unit of reference ref.output signal U with sense channel act., two output signal U ref., U act. with the absorptivity of object gas to infrared light
Figure BSA0000096547510000031
following relation is arranged:
U Act . U Ref . = I I O - - - ( 1 )
I 0: incident intensity, i.e. infrared light supply incident after the narrowband optical filter plate filters, with reference to the infrared light intensity of passage and sense channel, generally records under condition of nitrogen gas;
I: transmitted light intensity, the infrared light intensity after being absorbed by object gas in infrared-gas concentration sensor sense channel;
Based on being confined to monochromatic Lambert-beer's law: I=I oexp (ε lC n) (2)
C: object gas concentration;
ε: the absorption coefficient of object gas to infrared light;
L: object gas incident light path;
N: revise constant, depend on light path and object gas composition;
The light that the infrared light of infrared light supply incident sense channel after the narrowband optical filter plate filters certainly exists in some wave-length coverages in its wave-length coverage can not absorbed by object gas, has non-absorption bands, therefore, formula (2) is converted to:
I=I O×((1-S)×e (-ΣεlC")+S) (3)
⇒ I = I O × ( ( 1 - S ) × e - αCβ ) + S ) - - - ( 4 )
⇒ ( I I 0 - S ) / ( 1 - S ) = exp ( - αC β ) - - - ( 5 )
S: non-absorption bands accounts for the proportionality coefficient of sense channel incident infrared light wavelength scope, has characterized non-absorption bands to infrared-gas concentration sensor sense channel output signal U act.contribution;
α: exponential constant is relevant to the mean value of ε l in Lambert-beer's law;
β: the power constant, depend on the spectral characteristic of object gas;
In the non-existent situation of object gas, infrared-gas concentration sensor sense channel output signal U act.with reference passage output signal U ref.ratio be defined as the zero-bit output ratio of infrared-gas concentration sensor, by symbols Z, mean,
Z = U Act . ′ / U Ref . ′ - - - ( 6 )
in the non-existent situation of object gas, infrared-gas concentration sensor sense channel output signal U act.peak-to-peak value;
Figure BSA0000096547510000043
in the non-existent situation of object gas, the infrared-gas concentration sensor is with reference to the passage output signal U ref.peak-to-peak value;
In the situation that the object gas existence, infrared-gas concentration sensor transmitted light intensity I and incident intensity I 0the zero-bit output of ratio and infrared-gas concentration sensor more relevant than Z, I I O = U Act . U Ref . × Z - - - ( 7 )
Formula (5) can be exchanged into;
( U Act . U Ref . × Z - S ) / ( 1 - S ) = exp ( - αC β ) - - - ( 8 )
⇒ C = ( - In ( U Act . U Ref . × Z - S ) × 1 1 - S α ) 1 β - - - ( 9 )
In formula (9), parameter alpha, β determine as follows;
At first, determine the relative absorptivity Fa of object gas to infrared-gas concentration sensor infrared light, Fa = I 0 - I I 0 = 1 - I I 0 = 1 - U Act . U Ref . × Z = ( 1 - S ) × ( 1 - exp ( - αC β ) - - - ( 10 )
Then, under test status based at the same concentrations object gas, the consistency of the relative absorptivity Fa of same definite type infrared-gas concentration sensor infrared light, choose several infrared-gas concentration sensors, require as same definite type, and the concentrations tested ranged of definite object gas, uniformly-spaced set test point in the concentrations tested ranged of object gas; Applying each infrared-gas concentration sensor tests one by one according to test point, record the relative absorptivity Fa of infrared light that each infrared-gas concentration sensor is corresponding with the test concentrations value, averaged, and according to the test point gas concentration value corresponding relation with relative absorptivity Fa mean value, draw the test result analysis table;
Finally, according to formula (10) Selection of Function relational expression: Y=W * (1-exp (α X β)) (11)
X: independent variable-object gas concentration C;
Y: the mean value of dependent variable-relative absorptivity Fa of infrared-gas concentration sensor infrared light;
W:1-S, ignore and do not remember;
Test result according to test result analysis record, carry out curve fitting to formula (11), asks for the occurrence of parameter alpha and 3;
Through type (8) can draw parameter S in formula (9):
S = 1 - 1 - U Act . ″ / ( U Ref . ″ × Z ) 1 - e - α ( C ″ ) β - - - ( 12 )
C ": the full scale object gas concentration of infrared-gas concentration sensor test;
Figure BSA0000096547510000052
when object gas concentration full scale, infrared-gas concentration sensor sense channel output signal U act.peak-to-peak value;
when object gas concentration full scale, the infrared-gas concentration sensor is with reference to the passage output signal U ref.peak-to-peak value;
By related data: parameter alpha, β, S, Z bring in formula (9), can obtain the target function that the infrared-gas concentration sensor calculates gas concentration, the output signal U according to target function and infrared-gas concentration sensor with reference to passage ref.output signal U with sense channel act., obtain the gas concentration C of infrared-gas object gas that concentration sensor detects.
Further, the compensation that also comprises environment parameter in the method for correction is calculated and is compensated by the responsive unit of reference to the signal of other three transducers, specifically comprises temperature-compensating mechanism, humidity compensate is machine-processed and the pressure compensation mechanism, is specially:
Temperature-compensating mechanism is:
Introduce temperature compensation parameter λ, the absorptivity in conjunction with temperature relation compensation infrared-gas concentration sensor internal object gas to infrared light
Figure BSA0000096547510000054
the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the definition temperature-compensating:
T: the real time temperature of external environment during test;
T 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure BSA0000096547510000061
Figure BSA0000096547510000062
the time ambient temperature;
λ: temperature compensation parameter;
Wherein, temperature compensation parameter λ determines as follows: application infrared-gas concentration sensor is tested under definite object gas concentration, change the temperature of external environment simultaneously, and ambient temperature is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with the ambient temperature sampled point to infrared light
Figure BSA0000096547510000063
Figure BSA0000096547510000064
according to
Figure BSA0000096547510000065
the corresponding relation of value and ambient temperature carries out curve fitting, and asks for the occurrence of temperature compensation parameter λ;
Formula (13) is brought in formula (9), can obtain the target function of the temperature compensated rear calculating gas concentration of infrared-gas concentration sensor:
Figure BSA0000096547510000066
Based on ideal gas concentration law, to the target function C after temperature compensated compensationcarry out the secondary temperature-compensating, obtain the final goal function that the infrared-gas concentration sensor calculates gas concentration:
Figure BSA0000096547510000067
Wherein, temperature T, T 0adopt normal temperature, unit is K;
Humidity compensate mechanism is:
In surface air, steam (H 2o) content in atmosphere is along with weather condition alters a great deal, H 2o has a lot of absorption bands at the INFRARED ABSORPTION wave band, so need to carry out the appropriateness compensation.On the basis of temperature-compensating, introduce the humidity compensate parameter
Figure BSA0000096547510000068
absorptivity in conjunction with humidity relation compensation infrared-gas concentration sensor internal object gas to infrared light
Figure BSA0000096547510000069
the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the definition humidity compensate:
Figure BSA00000965475100000610
RH: the real-time humidity of external environment during test;
RH 0; Test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure BSA0000096547510000071
Figure BSA0000096547510000072
the time external environment humidity;
Figure BSA0000096547510000073
the humidity compensate parameter;
Wherein, humidity compensate parameter
Figure BSA0000096547510000074
determine as follows: application infrared-gas concentration sensor is tested at definite object gas concentration and temperature, change the humidity of external environment simultaneously, and ambient humidity is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with external environment humidity sampled point to infrared light
Figure BSA0000096547510000075
Figure BSA0000096547510000076
according to the corresponding relation of value and extraneous humidity carries out curve fitting, and asks for the humidity compensate parameter
Figure BSA0000096547510000078
occurrence;
Formula (15) is brought in formula (9), can obtain the infrared-gas concentration sensor and calculate the target function of gas concentration after humidity compensate:
Figure BSA0000096547510000079
Wherein, humidity RH, RH 0adopt relative humidity;
The pressure compensation mechanism is:
Because the variation of pressure can cause the variation of molecular motion, and then affect the transmissivity of infrared light, so on the basis of temperature and humidity compensated, introduce pressure compensating parameter β, in conjunction with temperature, the compensation of humidity relation, the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the compensation of definition pressure:
(16)
P: the real-time pressure of external environment during test;
P 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure BSA00000965475100000711
Figure BSA00000965475100000712
the time external environment pressure;
β: pressure compensating parameter;
Wherein, pressure compensating parameter β determines as follows: application infrared-gas concentration sensor is tested under definite object gas concentration, temperature and humidity, change the pressure of external environment simultaneously, and environmental stress is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with external environment pressure sampled point to infrared light
Figure BSA0000096547510000081
Figure BSA0000096547510000082
according to
Figure BSA0000096547510000083
the corresponding relation of value and outside pressure carries out curve fitting, and asks for the occurrence of pressure compensating parameter β;
Formula (16) is brought in formula (9), can obtain the infrared-gas concentration sensor and calculate the target function of gas concentration after the pressure compensation:
Figure BSA0000096547510000084
Wherein, pressure P, P 0adopt normal pressure, unit is; bar
Output signal U according to final goal function and infrared-gas concentration sensor with reference to passage ref.output signal U with sense channel act., obtain the gas concentration C of infrared-gas object gas that concentration sensor detects.
The present invention has following beneficial effect:
1, adopt the monolithic integrated technology process, multisensor is processed simultaneously, adopt different narrow wave band filter plate to be assembled in respectively coplanar a plurality of transducers of arranging, realization is carried out the light splitting detection to gas with various, when greatly cutting down finished cost, reduced that heat is crosstalked and power consumption, and further improved accuracy of detection.
2, adopt hot divider wall and hot isolation moat structure, each detector is carried out to the heat isolation, realize the integrated manufacture of monolithic of multi-gas sensor with this kind of technology, needn't be encapsulated respectively it.
3, adopt the MEMS/CMOS compatible technique to prepare infrared light supply, realize the coplanar integrated manufacture with transducer.
4, adopt the responsive unit of reference to carry out signal analysis and compensation correction to the probe unit of having assembled narrow wave band filter plate.
The accompanying drawing explanation
The structural representation of the infrared gas sensor that Fig. 1 is the many gas detections of the present invention;
The processing technology principle schematic that Fig. 2 is nano-sized surface modification infrared light supply of the present invention;
Fig. 3 is nanostructure infrared light supply cone-shaped nano structure SEM electromicroscopic photograph;
Fig. 4 is nanostructure infrared light supply infrared emittance of the present invention analysis;
Fig. 5 is nanostructure infrared light supply surface stress of the present invention emulation;
Fig. 6 is infrared-gas concentration sensor signal processing method flow chart of the present invention;
1 first responsive unit, 2 second responsive units, 3 the 3rd responsive units, the responsive unit of 4 references, 5 heat insulation raceway grooves, 6 nano-sized surface modification infrared light supplies, 61 silicon substrates, 62 silicon nitrides, 63 amorphous silicons, 64Al, 65TiN; 7 hot divider walls.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.
The present invention is prior art for the CMOS/MEMS technique do not elaborated.
Embodiment 1
With reference to figure 1, in the infrared gas sensor detected at the many gases shown in Fig. 1, comprise four responsive units, be respectively: the first responsive unit 3 of responsive unit the 2, the 3rd of responsive unit 1, second and responsive unit 4 of reference, four responsive units are distributed on take on the circumference that nano-sized surface modification infrared light supply 6 is the center of circle, wherein between the first responsive unit 2 of responsive unit 1, second, arrange between two responsive units 3 of heat insulation raceway groove 5, the three and the responsive unit 4 of reference two same heat insulation raceway grooves 5 also are set; Heat isolation is each other realized by hot divider wall 7 in four responsive units and nano-sized surface modification infrared light supply 6 peripheries, reduces hot impact of crosstalking.
Utilize the MEMS technology, prepare four gas infrared sensors and MEMS infrared light supply on single silicon chip simultaneously, wherein three transducers combine respectively narrow wave band filter plate, the specificity wave band of each sensor test gas is depended in the selection of filter plate, the narrow band filter slice wave band of the responsive unit of reference covers other three gas sensitization units (first the 51, second responsive unit 53 of sensitivity unit the 52, the 3rd of responsive unit), by the responsive first signal to other three transducers of reference, is calculated and compensate correction.
Embodiment 2
The present embodiment provides a kind of nano-sized surface modification infrared light supply 6, and as an object lesson, with reference to step (a)-(g) in figure 2, to the preparation technology of nano-sized surface modification infrared light supply 6 of the present invention, details are as follows:
(a), on monocrystalline substrate 61 grown silicon nitride 62, experiment condition; 780 ℃ of temperature, 330mTorr, SiH 2cl 2; 24sccm, NH 3: 90sccm;
(b), the deposit of amorphous silicon 63: temperature is 270 ℃, and gas flow and ratio are respectively SIH 4: 24%NH 3: 55%N 2: 5.2%RF:170;
(c), Al sputter and annealing: magnetron sputtering Al, condition: air pressure 10mTorr, after passing into Ar and meeting air pressure conditions, it is 8400W that RF is set, and then 450 ℃ of lower 90min times, carries out annealing in process;
(d), wet etching Al film: adopt conventional Al corrosive liquid, the remaining Al-Si compound particle of sample surfaces after corrosion.
(e), amorphous silicon dry etching: adopt Cl 2180sccm, pressure 300mTorr, RF350W, He200sccm, temperature 35-40 ℃, only be left surperficial metal silicide after etching completes.
(f), the etching of positive release aperture, for discharging monocrystalline substrate, prepare: gas CHF 37sccm, He100sccm, SF 630sccm, RF150W, pressure 400mTorr.Adopt the method for magnetron sputtering, the TiN clad metal silicide of sputter 40-50A and amorphous silicon skin, concrete experiment condition is Ar22.4sccm, N 23.0sccm pressure is 5e-3Torr, power is 1000W, and vacuum degree is 8e-7Pa.
(g), XeF 2the positive silicon substrate that discharges, form micro-cantilever infrared light supply supported, and condition is XeF 24Torr, N 220mTorr, temperature is 20 ℃.
In step (c), what adopt is that metal-induced crystallization prepares the taper forest structure, utilize metal and the silicon principle of dissolving each other, form the metal silication composition granule at boundary layer, process at the metal wet etching, do not gone silicon point to clean, retained metal silication composition granule sheltering as next step etching.The cone-shaped nano structure that etching is formed has carried out the SEM electromicroscopic photograph and has taken, cone structure surface area has as shown in Figure 3 increased by 5 times of left and right, after the TiN sputter is carried out in its surface, carried out the infrared emittance analysis, as shown in Figure 4, at HCl and NO detection field higher than 70% emissivity, at CH4, SO2, CO2 and NO2, detect and possess field higher than 60% emissivity, and at the 8-10 mu m waveband, existence is higher than 70% infrared emittance, XPS elementary analysis and Determination of Different Valence States (table 1, table 2).Table 1 has shown the C in the common process, O, and Si, and the F had an effect in the metal-induced crystallization process and Al, table 2 demonstration, after the infrared light supply processing of preparation, the main chemicals that exist are AlF x, AlSi x.And the metal silicide produced in the metal-induced crystallization process is etched in preparation process fully.
Table 1XPS elementary analysis
Remove thickness (nm) C O F Al Si
2.1 7.8 37.1 6.2 3.2 45.8
Table 2XPS Determination of Different Valence States
Figure BSA0000096547510000111
Adopt the Al-Si technology of dissolving each other to form metal silicide, as micro-silicon of sheltering injecting, carry out etching, form cone-shaped nano structure, and, at the TiN of its surface sputtering 40-50A, strengthen surface plasmon resonance effect, improve approximately 5% left and right of emissivity.Adopt dark silicon etching technology, realize that the front of arrowband infrared light supply discharges, reduce the thermal losses of light source heating process.For reducing the structural stress of the infrared light supply of the present invention that suspends, adopt SiN as with heating layer (the present embodiment is amorphous silicon 3), carrying out the dielectric layer directly contacted, reduce residual stress problems, the simulation example proving effect is arranged as shown in Figure 5.Simulation model is to utilize comsol mutiphisics software, when the research thermal source loads 0.2V voltage, under the impact of ohm heating effect, the variation of structural stress, after adding the silicon nitride medium layer, the maximum stress of arrowband infrared light supply is only 0.1299Gpa, can guarantee the stability of structure.
Embodiment 3
1) method for processing concentration signal of infrared gas sensor
Gas detection method based on the infrared optics principle has many kinds, and wherein the dual wavelength detection method is comparatively commonly used, and the method can play the effect of reference wavelength ambient compensation, thereby effectively improves anti-interference and the stability of system.Gas concentration computational methods based on optical principle also have many kinds, are mainly at present to determine concrete which kind of method calculating gas concentration that adopts according to accuracy requirement.The present embodiment has mainly been set forth the linear interpolation that adopts in research process-data lookup table computational methods, and the method is relatively simple, and its result has met the application demand of large multiple-alarm, warning occasion, as coal mine gas alarm etc.The precision of the method depends primarily on the data form situation of prior demarcation, the data segment of demarcating is more, test result is just more accurate, concrete calculating is at first to judge the concentration value of current test drops on which interval of the each point of prior demarcation, then calculate by the interpolation method substitution, there is software simultaneously and calculate and fast automatic calibration function.
A kind of infrared-gas concentration sensor signal processing method, the output signal of described infrared-gas concentration sensor is divided into the output signal U with reference to responsive unit ref.output signal U with sense channel act., two output signal U ref., U act.with the absorptivity of object gas to infrared light
Figure BSA0000096547510000121
following relation is arranged:
U Act . U Ref . = I I O - - - ( 1 )
I 0: incident intensity, i.e. infrared light supply incident after the narrowband optical filter plate filters, with reference to the infrared light intensity of passage and sense channel, generally records under condition of nitrogen gas;
I: transmitted light intensity, the infrared light intensity after being absorbed by object gas in infrared-gas concentration sensor sense channel;
Based on being confined to monochromatic Lambert-beer's law: I=I oexp (ε lC n) (2)
C: object gas concentration;
ε: the absorption coefficient of object gas to infrared light;
L: object gas incident light path;
N: revise constant, depend on light path and object gas composition;
Consider, the light that the infrared light of infrared light supply incident sense channel after the narrowband optical filter plate filters certainly exists in some wave-length coverages in its wave-length coverage can not absorbed by object gas, has non-absorption bands, therefore, formula (2) is converted to:
I=I O×((1-S)×e (-ΣεlCn)+S) (3)
⇒ I = I O × ( ( 1 - S ) × e - αCβ ) + S ) - - - ( 4 )
⇒ ( I I 0 - S ) / ( 1 - S ) = exp ( - αC β ) - - - ( 5 )
S: non-absorption bands accounts for the proportionality coefficient of sense channel incident infrared light wavelength scope, has characterized non-absorption bands to infrared-gas concentration sensor sense channel output signal U act.contribution;
α: exponential constant is relevant to the mean value of ε l in Lambert-beer's law;
β: the power constant, depend on the spectral characteristic of object gas;
In the non-existent situation of object gas, infrared-gas concentration sensor sense channel output signal U act.with reference passage output signal U ref.ratio be defined as the zero-bit output ratio of infrared-gas concentration sensor, by symbols Z, mean,
Z = U Act . ′ / U Ref . ′ - - - ( 6 )
Figure BSA0000096547510000132
in the non-existent situation of object gas, infrared-gas concentration sensor sense channel output signal U act.peak-to-peak value;
Figure BSA0000096547510000133
in the non-existent situation of object gas, the infrared-gas concentration sensor is with reference to the passage output signal U ref.peak-to-peak value;
In the situation that the object gas existence, infrared-gas concentration sensor transmitted light intensity I and incident intensity I 0the zero-bit output of ratio and infrared-gas concentration sensor more relevant than Z, I I O = U Act . U Ref . × Z - - - ( 7 )
Formula (5) can be exchanged into:
( U Act . U Ref . × Z - S ) / ( 1 - S ) = exp ( - αC β ) - - - ( 8 )
⇒ C = ( - In ( U Act . U Ref . × Z - S ) × 1 1 - S α ) 1 β - - - ( 9 )
In formula (9), parameter alpha, β determine as follows:
At first, determine the relative absorptivity Fa of object gas to infrared-gas concentration sensor infrared light, Fa = I 0 - I I 0 = 1 - I I 0 = 1 - U Act . U Ref . × Z = ( 1 - S ) × ( 1 - exp ( - αC β ) - - - ( 10 )
Then, under test status based at the same concentrations object gas, the consistency of the relative absorptivity Fa of same definite type infrared-gas concentration sensor infrared light, choose several infrared-gas concentration sensors, require as same definite type, and the concentrations tested ranged of definite object gas, uniformly-spaced set test point in the concentrations tested ranged of object gas; Applying each infrared-gas concentration sensor tests one by one according to test point, record the relative absorptivity Fa of infrared light that each infrared-gas concentration sensor is corresponding with the test concentrations value, averaged, and according to the test point gas concentration value corresponding relation with relative absorptivity Fa mean value, draw the test result analysis table;
Finally, according to formula (10) Selection of Function relational expression: Y=W * (1-exp (α X β)) (11)
X: independent variable-object gas concentration C;
Y: the mean value of dependent variable-relative absorptivity Fa of infrared-gas concentration sensor infrared light;
W:1-S, ignore and do not remember;
Test result according to test result analysis record, carry out curve fitting to formula (11), asks for the occurrence of parameter alpha and β;
Through type (8) can draw parameter S in formula (9):
S = 1 - 1 - U Act . ″ / ( U Ref . ″ × Z ) 1 - e - α ( C ″ ) β - - - ( 12 )
C ": the full scale object gas concentration of infrared-gas concentration sensor test;
when object gas concentration full scale, infrared-gas concentration sensor sense channel output signal U act.peak-to-peak value;
Figure BSA0000096547510000143
when object gas concentration full scale, the infrared-gas concentration sensor is with reference to the passage output signal U ref.peak-to-peak value;
By related data: parameter alpha, β, S, Z bring in formula (9), can obtain the target function that the infrared-gas concentration sensor calculates gas concentration, the output signal U according to target function and infrared-gas concentration sensor with reference to passage ref.output signal U with sense channel act., obtain the gas concentration C of infrared-gas object gas that concentration sensor detects.
2) temperature-compensating mechanism
Generally, in the measurement result of calculation of gas concentration and test process, the interior temperature of air chamber has relation, comprise some other environmental parameter, such as humidity, pressure etc. all has a direct impact gas concentration value, but belonging to temperature has the greatest impact, this also infers and obtains according to the principle of thermo-responsive unit, and therefore, it is very necessary taking adequate measures to compensate result of calculation.According to requirement and the accuracy relation of look-up method, can obtain a kind of simple indemnifying measure by experience and experimental test data analysis.
Also comprise real-time measurement temperature compensation; Introduce temperature compensation parameter λ, the absorptivity in conjunction with temperature relation compensation infrared-gas concentration sensor internal object gas to infrared light
Figure BSA0000096547510000151
the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the definition temperature-compensating:
Figure BSA0000096547510000152
T: the real time temperature of external environment during test;
T 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure BSA0000096547510000153
Figure BSA0000096547510000154
the time ambient temperature;
λ: temperature compensation parameter;
Wherein, temperature compensation parameter λ determines as follows: application infrared-gas concentration sensor is tested under definite object gas concentration, change the temperature of external environment simultaneously, and ambient temperature is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with the ambient temperature sampled point to infrared light
Figure BSA0000096547510000155
according to
Figure BSA0000096547510000157
the corresponding relation of value and ambient temperature carries out curve fitting, and asks for the occurrence of temperature compensation parameter λ;
Formula (13) is brought in formula (9), can obtain the target function of the temperature compensated rear calculating gas concentration of infrared-gas concentration sensor:
Figure BSA0000096547510000158
Based on ideal gas concentration law, to the target function C after temperature compensated compensationcarry out the secondary temperature-compensating, obtain the final goal function that the infrared-gas concentration sensor calculates gas concentration;
Figure BSA0000096547510000159
(14)
Wherein, temperature T, T 0adopt normal temperature, unit is K;
Humidity compensate mechanism is:
In surface air, steam (H 2o) content in atmosphere is along with weather condition alters a great deal, H 2o has a lot of absorption bands at the INFRARED ABSORPTION wave band, so need to carry out the appropriateness compensation.On the basis of temperature-compensating, introduce the humidity compensate parameter
Figure BSA0000096547510000161
absorptivity in conjunction with humidity relation compensation infrared-gas concentration sensor internal object gas to infrared light
Figure BSA0000096547510000162
the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the definition humidity compensate:
Figure BSA0000096547510000163
RH: the real-time humidity of external environment during test;
RH 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure BSA0000096547510000164
Figure BSA0000096547510000165
the time external environment humidity;
Figure BSA0000096547510000166
the humidity compensate parameter;
Wherein, humidity compensate parameter
Figure BSA0000096547510000167
determine as follows: application infrared-gas concentration sensor is tested at definite object gas concentration and temperature, change the humidity of external environment simultaneously, and ambient humidity is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with external environment humidity sampled point to infrared light
Figure BSA0000096547510000168
Figure BSA0000096547510000169
according to
Figure BSA00000965475100001610
the corresponding relation of value and extraneous humidity carries out curve fitting, and asks for the humidity compensate parameter
Figure BSA00000965475100001611
occurrence;
Formula (15) is brought in formula (9), can obtain the infrared-gas concentration sensor and calculate the target function of gas concentration after humidity compensate:
Figure BSA00000965475100001612
Wherein, humidity RH, RH 0adopt relative humidity;
The pressure compensation mechanism is:
Because the variation of pressure can cause the variation of molecular motion, and then affect the transmissivity of infrared light, so on the basis of temperature and humidity compensated, introduce pressure compensating parameter β, in conjunction with temperature, the compensation of humidity relation, the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the compensation of definition pressure:
(16)
P: the real-time pressure of external environment during test;
P 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure BSA0000096547510000172
the time external environment pressure;
β: pressure compensating parameter;
Wherein, pressure compensating parameter β determines as follows: application infrared-gas concentration sensor is tested under definite object gas concentration, temperature and humidity, change the pressure of external environment simultaneously, and environmental stress is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with external environment pressure sampled point to infrared light
Figure BSA0000096547510000174
according to
Figure BSA0000096547510000176
the corresponding relation of value and outside pressure carries out curve fitting, and asks for the occurrence of pressure compensating parameter β;
Formula (16) is brought in formula (9), can obtain the infrared-gas concentration sensor and calculate the target function of gas concentration after the pressure compensation:
Figure BSA0000096547510000177
Wherein, pressure P, P 0adopt normal pressure, unit is; bar
Output signal U according to final goal function and infrared-gas concentration sensor with reference to passage ref.output signal U with sense channel act., obtain the gas concentration C of infrared-gas object gas that concentration sensor detects.
3) concentration calculation software design
Fact proved, ir-absorbance, along with the variation of gas concentration, is also affected by the mode of the design of air chamber structure, electromagnetic interference, signal extraction simultaneously.Therefore, infrared light supply need to be modulated by microprocessor, and processes to improve the detection performance in conjunction with method for detecting weak signals and software, and Fig. 6 has described the flow chart of whole design.In computational process, at first ambient temperature need to be gathered equally, and it is for calculating the foundation of compensation.Method and the look-up method of its signals collecting and processing are similar, need to try to achieve by collection the output signal of two passages, and carry out relevant calculation of parameter according to the output signal of this two passage, such as the calculating of carrying out zero-bit, span.
Algorithm of the present invention has following beneficial effect:
1), the impact of infrared-gas concentration sensor zero-bit output Determination result in the non-existent situation of object gas;
2), the impact for ambient temperature on infrared-gas concentration sensor testing result, implement twice temperature-compensating, in order to revise the testing result of infrared-gas concentration sensor.
3), the impact of temperature in perfect gas law realized to second compensation; Make the infrared-gas concentration sensor to use under condition of different temperatures, overcome because of area and the change of the weather condition impact on infrared-gas concentration sensor usability.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improvement and conversion all should belong to the protection range of claims of the present invention.

Claims (5)

1. the infrared gas sensor that gas more than one kind detects, it is characterized in that, comprise four i.e. responsive units, be respectively: the first responsive unit (1), the second responsive unit (2), the 3rd responsive unit (3) and the responsive unit of reference (4), four responsive units are distributed on take on the circumference that nano-sized surface modification infrared light supply (6) is the center of circle, the heat insulation raceway groove (5) of a L-type wherein is set between the first responsive unit (1), the second responsive unit (2), the heat insulation raceway groove (5) of a L-type also is set between the 3rd responsive unit (3) and the responsive unit of reference (4); Four responsive units and nano-sized surface modification infrared light supply (6) is peripheral by hot divider wall (7), realizes heat isolation each other, reduce hot impact of crosstalking; The narrow band filter slice wave band of reference sensitivity unit covers the first responsive unit (1), the second sensitivity unit (2), the 3rd responsive unit (3), by the responsive first signal to other three transducers of reference, is calculated and compensate correction.
2. infrared gas sensor according to claim 1, it is characterized in that, the described first responsive unit (1), the second responsive unit (2), the 3rd responsive unit (3) and the responsive unit of reference (4) are distributed on the focus through the ellipse of light source (5).
3. infrared gas sensor according to claim 1, is characterized in that, the preparation technology of described nano-sized surface modification infrared light supply (6) is as follows:
(a), at the upper grown silicon nitride (62) of monocrystalline substrate (61), experiment condition: 780 ℃ of temperature, 330mTorr, SiH 2cl 2: 24sccm, NH 3: 90sccm;
(b), the deposit of amorphous silicon (63): temperature is 270 ℃, and gas ratio is respectively SIH 4: 24%NH 3: 55%N 2: 5.2%RF:170:
(c), Al sputter and annealing: magnetron sputtering Al, condition: air pressure 10mTorr, after passing into Ar and meeting air pressure conditions, it is 8400W that RF is set, and then 450 ℃ of lower 90min times, carries out annealing in process;
(d), wet etching Al film: adopt conventional Al corrosive liquid, the remaining Al-Si compound particle of sample surfaces after corrosion;
(e), amorphous silicon dry etching: adopt Cl 2180sccm, pressure 300mTorr, RF350W, He200sccm, temperature 35-40 ℃, micro-shelter that after etching completes, formation surface metal silicide forms;
(f), the etching of positive release aperture, for discharging monocrystalline substrate, prepare: gas CHF 37sccm, He100sccm, SF 630sccm, RF150W, pressure 400mTorr; Adopt the method for magnetron sputtering, the TiN clad metal silicide of sputter 40-50A and amorphous silicon skin, condition is Ar22.4sccm, N23.0sccm, pressure is 5e-3Torr, and power is 1000W, and vacuum degree is 8e-7Pa;
(g), XeF 2the positive silicon substrate that discharges, form micro-cantilever infrared light supply supported, and condition is XeF 24Torr, N 220mTorr, temperature is 20 ℃.
4. infrared gas sensor according to claim 1, it is characterized in that, the method that the responsive first signal to other three transducers of reference was calculated and compensated correction is: the output signal of described infrared-gas concentration sensor is divided into the output signal U of the responsive unit of reference ref.output signal U with sense channel act., two output signal U ref., U act.with the absorptivity of object gas to infrared light
Figure FSA0000096547500000021
following relation is arranged:
U Act . U Ref . = I I O - - - ( 1 )
I 0: incident intensity, i.e. infrared light supply incident after the narrowband optical filter plate filters, with reference to the infrared light intensity of passage and sense channel, generally records under condition of nitrogen gas;
I: transmitted light intensity, the infrared light intensity after being absorbed by object gas in infrared-gas concentration sensor sense channel;
Based on being confined to monochromatic Lambert-beer's law: I=I oexp (ε lC n) (2)
C: object gas concentration;
ε: the absorption coefficient of object gas to infrared light;
L: object gas incident light path;
N: revise constant, depend on light path and object gas composition;
The light that the infrared light of infrared light supply incident sense channel after the narrowband optical filter plate filters certainly exists in some wave-length coverages in its wave-length coverage can not absorbed by object gas, has non-absorption bands, therefore, formula (2) is converted to:
I=I O×((1-S)×e (-ΣεlC″)+S) (3)
⇒ I = I O × ( ( 1 - S ) × e - αCβ ) + S ) - - - ( 4 )
⇒ ( I I 0 - S ) / ( 1 - S ) = exp ( - αC β ) - - - ( 5 )
S: non-absorption bands accounts for the proportionality coefficient of sense channel incident infrared light wavelength scope, has characterized non-absorption bands to infrared-gas concentration sensor sense channel output signal U act.contribution;
α: exponential constant is relevant to the mean value of ε l in Lambert-beer's law;
β: the power constant, depend on the spectral characteristic of object gas;
In the non-existent situation of object gas, infrared-gas concentration sensor sense channel output signal U act.with reference passage output signal U ref.ratio be defined as the zero-bit output ratio of infrared-gas concentration sensor, by symbols Z, mean,
Z = U Act . ′ / U Ref . ′ - - - ( 6 )
in the non-existent situation of object gas, infrared-gas concentration sensor sense channel output signal U act.peak-to-peak value;
Figure FSA0000096547500000034
in the non-existent situation of object gas, the infrared-gas concentration sensor is with reference to the passage output signal U ref.peak-to-peak value;
In the situation that the object gas existence, infrared-gas concentration sensor transmitted light intensity I and incident intensity I 0the zero-bit output of ratio and infrared-gas concentration sensor more relevant than Z, I I O = U Act . U Ref . × Z - - - ( 7 )
Formula (5) can be exchanged into:
( U Act . U Ref . × Z - S ) / ( 1 - S ) = exp ( - αC β ) - - - ( 8 )
⇒ C = ( - In ( U Act . U Ref . × Z - S ) × 1 1 - S α ) 1 β - - - ( 9 )
In formula (9), parameter alpha, β determine as follows:
At first, determine the relative absorptivity Fa of object gas to infrared-gas concentration sensor infrared light, Fa = I 0 - I I 0 = 1 - I I 0 = 1 - U Act . U Ref . × Z = ( 1 - S ) × ( 1 - exp ( - αC β ) - - - ( 10 )
Then, under test status based at the same concentrations object gas, the consistency of the relative absorptivity Fa of same definite type infrared-gas concentration sensor infrared light, choose several infrared-gas concentration sensors, require as same definite type, and the concentrations tested ranged of definite object gas, uniformly-spaced set test point in the concentrations tested ranged of object gas; Applying each infrared-gas concentration sensor tests one by one according to test point, record the relative absorptivity Fa of infrared light that each infrared-gas concentration sensor is corresponding with the test concentrations value, averaged, and according to the test point gas concentration value corresponding relation with relative absorptivity Fa mean value, draw the test result analysis table;
Finally, according to formula (10) Selection of Function relational expression: Y=W * (1-exp (α X β)) (11)
X: independent variable-object gas concentration C;
Y: the mean value of dependent variable-relative absorptivity Fa of infrared-gas concentration sensor infrared light;
W:1-S, ignore and do not remember;
Test result according to test result analysis record, carry out curve fitting to formula (11), asks for the occurrence of parameter alpha and β;
Through type (8) can draw parameter S in formula (9);
S = 1 - 1 - U Act . ″ / ( U Ref . ″ × Z ) 1 - e - α ( C ″ ) β - - - ( 12 )
C ": the full scale object gas concentration of infrared-gas concentration sensor test;
when object gas concentration full scale, infrared-gas concentration sensor sense channel output signal U act.peak-to-peak value;
when object gas concentration full scale, the infrared-gas concentration sensor is with reference to the passage output signal U ref.peak-to-peak value;
By related data: parameter alpha, β, S, Z bring in formula (9), can obtain the target function that the infrared-gas concentration sensor calculates gas concentration, the output signal U according to target function and infrared-gas concentration sensor with reference to passage ref.output signal U with sense channel act., obtain the gas concentration C of infrared-gas object gas that concentration sensor detects.
5. infrared gas sensor according to claim 4, it is characterized in that, the compensation that also comprises environment parameter in the method for correction is calculated and is compensated by the responsive unit of reference to the signal of other three transducers, specifically comprise that temperature-compensating is machine-processed, humidity compensate is machine-processed and the pressure compensation mechanism, be specially:
Temperature-compensating mechanism is:
Introduce temperature compensation parameter λ, the absorptivity in conjunction with temperature relation compensation infrared-gas concentration sensor internal object gas to infrared light
Figure FSA0000096547500000051
the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the definition temperature-compensating:
Figure FSA0000096547500000052
T: the real time temperature of external environment during test;
T 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure FSA0000096547500000053
Figure FSA0000096547500000054
the time ambient temperature;
λ: temperature compensation parameter;
Wherein, temperature compensation parameter λ determines as follows: application infrared-gas concentration sensor is tested under definite object gas concentration, change the temperature of external environment simultaneously, and ambient temperature is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with the ambient temperature sampled point to infrared light
Figure FSA0000096547500000055
Figure FSA0000096547500000056
according to
Figure FSA0000096547500000057
the corresponding relation of value and ambient temperature carries out curve fitting, and asks for the occurrence of temperature compensation parameter λ;
Formula (13) is brought in formula (9), can obtain the target function of the temperature compensated rear calculating gas concentration of infrared-gas concentration sensor:
Based on ideal gas concentration law, to the target function C after temperature compensated compensationcarry out the secondary temperature-compensating, obtain the final goal function that the infrared-gas concentration sensor calculates gas concentration:
Figure FSA0000096547500000059
Wherein, temperature T, T 0adopt normal temperature, unit is K;
Humidity compensate mechanism is:
In surface air, steam (H 2o) content in atmosphere is along with weather condition alters a great deal, H 2o has a lot of absorption bands at the INFRARED ABSORPTION wave band, so need to carry out the appropriateness compensation.On the basis of temperature-compensating, introduce the humidity compensate parameter
Figure FSA0000096547500000061
absorptivity in conjunction with humidity relation compensation infrared-gas concentration sensor internal object gas to infrared light
Figure FSA0000096547500000062
the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the definition humidity compensate:
RH: the real-time humidity of external environment during test;
RH 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure FSA0000096547500000064
Figure FSA0000096547500000065
the time external environment humidity;
Figure FSA0000096547500000066
the humidity compensate parameter;
Wherein, humidity compensate parameter
Figure FSA0000096547500000067
determine as follows: application infrared-gas concentration sensor is tested at definite object gas concentration and temperature, change the humidity of external environment simultaneously, and ambient humidity is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with external environment humidity sampled point to infrared light
Figure FSA0000096547500000068
Figure FSA0000096547500000069
according to
Figure FSA00000965475000000610
the corresponding relation of value and extraneous humidity carries out curve fitting, and asks for the humidity compensate parameter
Figure FSA00000965475000000611
occurrence;
Formula (15) is brought in formula (9), can obtain the infrared-gas concentration sensor and calculate the target function of gas concentration after humidity compensate:
Figure FSA00000965475000000612
Wherein, humidity RH, RH 0adopt relative humidity;
The pressure compensation mechanism is:
Because the variation of pressure can cause the variation of molecular motion, and then affect the transmissivity of infrared light, so on the basis of temperature and humidity compensated, introduce pressure compensating parameter β, in conjunction with temperature, the compensation of humidity relation, the absorptivity of infrared-gas concentration sensor internal object gas to infrared light after the compensation of definition pressure:
Figure FSA0000096547500000071
(16)
P: the real-time pressure of external environment during test;
P 0: test is for determining that the output of infrared-gas concentration sensor zero-bit is than the infrared-gas concentration sensor output signal of Z
Figure FSA0000096547500000072
Figure FSA0000096547500000073
the time external environment pressure;
β: pressure compensating parameter;
Wherein, pressure compensating parameter β determines as follows: application infrared-gas concentration sensor is tested under definite object gas concentration, temperature and humidity, change the pressure of external environment simultaneously, and environmental stress is set the sampled point of some to external world, records the absorptivity of the infrared-gas concentration sensor internal object gas corresponding with external environment pressure sampled point to infrared light
Figure FSA0000096547500000074
Figure FSA0000096547500000075
according to
Figure FSA0000096547500000076
the corresponding relation of value and outside pressure carries out curve fitting, and asks for the occurrence of pressure compensating parameter β;
Formula (16) is brought in formula (9), can obtain the infrared-gas concentration sensor and calculate the target function of gas concentration after the pressure compensation:
Wherein, pressure P, P 0adopt normal pressure, unit is; bar
Output signal U according to final goal function and infrared-gas concentration sensor with reference to passage ref.output signal U with sense channel act., obtain the gas concentration C of infrared-gas object gas that concentration sensor detects.
CN201310500970.3A 2013-10-23 2013-10-23 A kind of infrared gas sensor of many gas detecting Expired - Fee Related CN103500770B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310500970.3A CN103500770B (en) 2013-10-23 2013-10-23 A kind of infrared gas sensor of many gas detecting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310500970.3A CN103500770B (en) 2013-10-23 2013-10-23 A kind of infrared gas sensor of many gas detecting

Publications (2)

Publication Number Publication Date
CN103500770A true CN103500770A (en) 2014-01-08
CN103500770B CN103500770B (en) 2016-08-24

Family

ID=49865957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310500970.3A Expired - Fee Related CN103500770B (en) 2013-10-23 2013-10-23 A kind of infrared gas sensor of many gas detecting

Country Status (1)

Country Link
CN (1) CN103500770B (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016165359A1 (en) * 2015-04-16 2016-10-20 歌尔声学股份有限公司 Encapsulation structure for integrated sensor
CN106487371A (en) * 2015-09-01 2017-03-08 北京自动化控制设备研究所 A kind of adaptive interface device of compatibility different pressures sensor
CN106802339A (en) * 2017-01-19 2017-06-06 烟台睿创微纳技术股份有限公司 A kind of array type MEMS gas sensors
CN106840533A (en) * 2017-03-02 2017-06-13 佛山市顺德区环威电器有限公司 A kind of refrigerator or wine cabinet or the special small-sized ammonia refrigeration diffusion absorbing refrigerator NH_3 leakage real-time detection processing method of refrigerating box
CN107402188A (en) * 2017-06-07 2017-11-28 杭州电子科技大学 The continuous on-line monitoring system of underground fluid carbon dioxide and monitoring method
CN108169157A (en) * 2017-11-24 2018-06-15 国网北京市电力公司 Sulfur hexafluoride compensation method and device
CN109313129A (en) * 2016-06-03 2019-02-05 罗伯特·博世有限公司 Microelectronic sensor device and method for manufacturing microelectronic sensor device
CN109444068A (en) * 2018-12-29 2019-03-08 郎溪杰博电器科技有限公司 A kind of Fuzzy Predictive Control analysis system of infrared carbon sulfur analyzer
CN110095426A (en) * 2019-04-12 2019-08-06 华中科技大学鄂州工业技术研究院 A kind of infrared gas sensor based on infrared emission and detection integrated chip
CN110426495A (en) * 2019-09-29 2019-11-08 江西珉轩智能科技有限公司 A kind of environmental monitoring method of calibration based on big data
CN110462377A (en) * 2016-12-09 2019-11-15 新加坡国立大学 Gas sensor MEMS structure and its manufacturing method
CN110520726A (en) * 2017-03-03 2019-11-29 原子能和替代能源委员会 Method for calibrating electronic nose
WO2020086004A1 (en) * 2018-10-26 2020-04-30 National University Of Singapore Thermocouple, thermopile and devices
CN111407280A (en) * 2020-03-10 2020-07-14 山东大学 End-tidal CO of noninvasive ventilator2Monitoring device and method
CN112082967A (en) * 2020-09-18 2020-12-15 重庆大学 Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor
CN113252579A (en) * 2021-04-27 2021-08-13 浙江省现代农业装备设计研究院 Facility-based agricultural comprehensive sensor device and air parameter detection method thereof
CN116973521A (en) * 2023-09-21 2023-10-31 北京燕山时代仪表有限公司 Temperature compensation method and device for gas detector and gas detector
CN117871450A (en) * 2024-03-12 2024-04-12 国科大杭州高等研究院 Cross interference processing method in non-dispersive infrared gas detection

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041723A (en) * 1989-09-30 1991-08-20 Horiba, Ltd. Infrared ray detector with multiple optical filters
US20010015408A1 (en) * 2000-02-10 2001-08-23 Burkhard Stock Infrared optical gas-measuring device and gas-measuring process
CN1735801A (en) * 2002-11-07 2006-02-15 E2V技术英国有限公司 Gas sensors
CN102183482A (en) * 2011-02-23 2011-09-14 中国科学院安徽光学精密机械研究所 Non-disperse infrared multi-component flue gas analyzer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041723A (en) * 1989-09-30 1991-08-20 Horiba, Ltd. Infrared ray detector with multiple optical filters
US20010015408A1 (en) * 2000-02-10 2001-08-23 Burkhard Stock Infrared optical gas-measuring device and gas-measuring process
CN1735801A (en) * 2002-11-07 2006-02-15 E2V技术英国有限公司 Gas sensors
CN102183482A (en) * 2011-02-23 2011-09-14 中国科学院安徽光学精密机械研究所 Non-disperse infrared multi-component flue gas analyzer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
谭秋林、张文栋等: "基于红外原理的微型多气体检测系统的设计", 《哈尔滨工业大学学报》 *

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016165359A1 (en) * 2015-04-16 2016-10-20 歌尔声学股份有限公司 Encapsulation structure for integrated sensor
CN106487371A (en) * 2015-09-01 2017-03-08 北京自动化控制设备研究所 A kind of adaptive interface device of compatibility different pressures sensor
CN109313129A (en) * 2016-06-03 2019-02-05 罗伯特·博世有限公司 Microelectronic sensor device and method for manufacturing microelectronic sensor device
CN110462377A (en) * 2016-12-09 2019-11-15 新加坡国立大学 Gas sensor MEMS structure and its manufacturing method
CN106802339A (en) * 2017-01-19 2017-06-06 烟台睿创微纳技术股份有限公司 A kind of array type MEMS gas sensors
CN106840533A (en) * 2017-03-02 2017-06-13 佛山市顺德区环威电器有限公司 A kind of refrigerator or wine cabinet or the special small-sized ammonia refrigeration diffusion absorbing refrigerator NH_3 leakage real-time detection processing method of refrigerating box
CN110520726A (en) * 2017-03-03 2019-11-29 原子能和替代能源委员会 Method for calibrating electronic nose
CN107402188A (en) * 2017-06-07 2017-11-28 杭州电子科技大学 The continuous on-line monitoring system of underground fluid carbon dioxide and monitoring method
CN108169157A (en) * 2017-11-24 2018-06-15 国网北京市电力公司 Sulfur hexafluoride compensation method and device
WO2020086004A1 (en) * 2018-10-26 2020-04-30 National University Of Singapore Thermocouple, thermopile and devices
CN109444068A (en) * 2018-12-29 2019-03-08 郎溪杰博电器科技有限公司 A kind of Fuzzy Predictive Control analysis system of infrared carbon sulfur analyzer
CN110095426A (en) * 2019-04-12 2019-08-06 华中科技大学鄂州工业技术研究院 A kind of infrared gas sensor based on infrared emission and detection integrated chip
CN110095426B (en) * 2019-04-12 2022-01-07 华中科技大学鄂州工业技术研究院 Infrared gas sensor based on infrared emission and detection integrated chip
CN110426495A (en) * 2019-09-29 2019-11-08 江西珉轩智能科技有限公司 A kind of environmental monitoring method of calibration based on big data
CN111407280A (en) * 2020-03-10 2020-07-14 山东大学 End-tidal CO of noninvasive ventilator2Monitoring device and method
CN112082967A (en) * 2020-09-18 2020-12-15 重庆大学 Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor
CN113252579A (en) * 2021-04-27 2021-08-13 浙江省现代农业装备设计研究院 Facility-based agricultural comprehensive sensor device and air parameter detection method thereof
CN116973521A (en) * 2023-09-21 2023-10-31 北京燕山时代仪表有限公司 Temperature compensation method and device for gas detector and gas detector
CN116973521B (en) * 2023-09-21 2023-12-22 北京燕山时代仪表有限公司 Temperature compensation method and device for gas detector and gas detector
CN117871450A (en) * 2024-03-12 2024-04-12 国科大杭州高等研究院 Cross interference processing method in non-dispersive infrared gas detection

Also Published As

Publication number Publication date
CN103500770B (en) 2016-08-24

Similar Documents

Publication Publication Date Title
CN103500770A (en) Infrared gas sensor for detecting a variety of gases
CN103528957B (en) A kind of infrared gas sensor of air chamber encapsulation integration
CN205374298U (en) Trace gas concentration detection apparatus based on TDLAS
CN101566501B (en) Method for measuring plasma electron density by fiber spectrum synergizing discharge current
CN103344964B (en) Laser radar device for distinguishing dust-haze classifications in remote sensing mode
CN101865641A (en) Method and device for measuring thickness of semiconductor film
JP2007003308A (en) Method of estimating ground temperature and program for it
CN103868885A (en) Composite multi-harmonic-based online gas concentration measurement method
CN104181515A (en) Shallow sea water depth inversion method based on high-spectrum data of blue-yellow wave band
CN104316491A (en) Method for detecting urea doped in milk based on synchronous-asynchronous two-dimensional near-infrared correlation spectrum
CN105823749B (en) A kind of condenser type infrared gas sensor based on MEMS
CN105486655A (en) Rapid detection method for organic matters in soil based on infrared spectroscopic intelligent identification model
CN102322957B (en) Spectrum drifting detection method for interference type hyperspectral imager
CN105092053B (en) Three wavelength for MOCVD epitaxy growth are excused from a college course positive infrared monitoring method and device
CN101609002B (en) New method for measuring optical band gap of semiconductor film material
CN108333143B (en) Water vapor concentration measurement correction method based on tunable laser absorption spectrum
CN103344561B (en) MRTD (Minimum Resolvable Temperature Difference)-based gas infrared imaging detection system performance evaluation method
CN103308186A (en) Method for measuring temperature in vacuum environment based on wavelength modulation spectrum technology
CN102128806A (en) Gas detection method used for infrared gas analyzer
CN101949833A (en) Method for processing concentration signal of infrared gas sensor
CN201892573U (en) Near-infrared radiation thermometer
CN201837484U (en) Temperature measuring device based on Raman light reaction
CN204944680U (en) A kind of three wavelength of the MOCVD of being applied to reaction chamber are excused from a college course just online infrared monitor
Mitmit et al. Infrared wavelength-specific gas sensing with pyroelectricity at room temperature
CN104390921A (en) Method for online measurement of concentration based on absorption photometry

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160824

Termination date: 20161023